CN203351612U - Schottky diode - Google Patents
Schottky diode Download PDFInfo
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- CN203351612U CN203351612U CN 201320467664 CN201320467664U CN203351612U CN 203351612 U CN203351612 U CN 203351612U CN 201320467664 CN201320467664 CN 201320467664 CN 201320467664 U CN201320467664 U CN 201320467664U CN 203351612 U CN203351612 U CN 203351612U
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- schottky diode
- doped region
- circular
- conduction type
- district
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Abstract
The utility model relates to a schottky diode. The schottky diode comprises a first electrode layer, a semiconductor substrate of a first conductive type on the first electrode layer, a semiconductor epitaxial layer of the first conductive type on the semiconductor substrate, a plurality of circular doped regions of a second conductive type arranged in the epitaxial layer tightly, and a second electrode layer formed on the epitaxial layer and contacted with the doped regions. With the arrangement of the plurality of circular doped regions of the second conductive type, the whole surface of the epitaxial layer is covered with a depletion region formed by the doped regions under a reverse bias voltage.
Description
Technical field
The utility model relates to a kind of semiconductor power device.More specifically, the utility model relates to a kind of Schottky diode with junction capacitance and conducting resistance of minimizing.
Background technology
For wherein embedding and have in the junction barrier schottky diode (JBS) and PIN/ Schottky compound diode (MPS) of PN junction, the effect of PN junction is to exhaust communication channel each other when diode reverse biased, form a space charge region that covers whole active area, thereby being had, Schottky diode approaches the oppositely withstand voltage of PN diode, as shown in Figure 1.Fig. 2 shows a kind of example of JBS Schottky diode.This Schottky diode 200 comprises cathode layer 206, n+ substrate 202, and n-epitaxial loayer 204, be formed on a plurality of p+ doped regions 234 and anode layer 230 in epitaxial loayer.This diode further comprises a plurality of Schottky contacts 232 that formed by anode metal layer 230 and n-epitaxial loayer 204 and a plurality of PN junction formed by p+ doped region 234 and n-epitaxial loayer 204.
The Schottky diode of N-shaped shown in Fig. 2 of take is example, the p-type area distribution of some need to be arranged in the superficial layer of N-shaped epitaxial loayer, forms PN junction.At first formed PN junction will guarantee device anti-all communication channel of depletion region energy pinch off partially time the under given voltage, just can guarantee the reversed bias voltage of design.Generally ，pXing district area is larger, and the area more little raceway groove that more is conducive in N-shaped conducting district exhausts.But along with the increase of p-type district area, the dwindling of N-shaped conducting region area, the series resistance of corresponding device increases.Therefore, the design of the shape in p district and distribution is very large to the performance impact of device.
In current N-shaped substrate diode structure, the p district is generally bar shaped distribution or p-type district around bar shaped n district, and as shown in Figure 3, distributed rectangular or p-type district are around rectangle n district, as shown in Figure 4.For the device with bar shaped distribution p plot structure, the area in the p district that bar shaped distributes is large than rectangle obviously, therefore than rectangle P district, has larger conducting resistance.The area of larger active area need to be provided in order to reach same design current, and the junction capacitance of resulting device is also just larger.And, for the device with distributed rectangular p plot structure, because 4 summit depletion regions in adjacent rectangle p district can not form the rectangle depletion region, as shown in Figure 5, this is due to due to the non-smooth variation in corner in rectangle p district.The area that is the p district by the area that enlarges rectangle can make the depletion region at place, 4 summits between adjacent p district overlap, thereby whole depletion region is connected.But, can bring so extra depletion region area and perimeter.
For example addresses the above problem, need to provide a kind of Schottky diode of junction capacitance and conducting resistance of minimizing.
The utility model content
According to an aspect of the present utility model, a kind of Schottky diode is provided, comprising:
The first electrode layer,
Be positioned at the Semiconductor substrate of the first conduction type on described the first electrode layer;
Be positioned at the semiconductor epitaxial layers of the first conduction type on described Semiconductor substrate;
Be formed on the circular doped region that active area in described epitaxial loayer comprises the second conduction type of a plurality of solid matters,
Be formed on described epitaxial loayer and the second electrode lay contacted with described doped region,
It is characterized in that,
The layout of the circular doped region of described a plurality of the second conduction types makes, under reverse bias voltage, and the depletion region pinch off communication channel formed by described doped region.
Preferably, the layout of the circular doped region of described a plurality of the second conduction types makes, and under reverse bias voltage, for any three circular doped regions of neighbour in twos, the depletion region edge of each circular doped region is through the mid point between these three circular doped regions.
Preferably, the diameter of the circular doped region of described the second conduction type makes this circle doped region under reverse biased that break-through not occur.
Preferably, described semiconductor is carborundum.
Preferably, this Schottky diode is junction barrier schottky diode or PIN/ Schottky compound diode.
Preferably, described the first conduction type is N-shaped and described the second conduction type is p-type; Perhaps described the first conduction type is p-type, and described the second conduction type is N-shaped.
According on the other hand of the present utility model, a kind of Schottky diode is provided, comprising:
The first electrode layer,
Be positioned at the Semiconductor substrate of the first conduction type on described the first electrode layer;
Be positioned at the semiconductor epitaxial layers of the first conduction type on described Semiconductor substrate;
Active area in described semiconductor epitaxial layers comprises the doped region of second conduction type in the circular epitaxial loayer zone that has a plurality of solid matters therebetween,
Be formed on described epitaxial loayer and the second electrode lay contacted with described doped region,
It is characterized in that,
The layout of described a plurality of circular epitaxial loayer zones and described doped region makes, under reverse bias voltage, and the depletion region pinch off communication channel formed by described doped region.
Preferably, the interval between adjacent circular epitaxial loayer zone makes described doped region under reverse biased that break-through not occur.
Compared with prior art, in identical rectification and withstand voltage properties situation, Schottky diode of the present utility model has the Schottky contacts area of larger proportion, the active region area of less, thereby there is less conducting resistance and junction capacitance; In the situation that have the identity unit size, Schottky diode of the present utility model has identical withstand voltage properties and the current value of Geng Gao.
The accompanying drawing explanation
Fig. 1 illustrates the schematic cross-section of depleted active area;
Fig. 2 illustrates a kind of Schottky diode structure schematic diagram of prior art;
Fig. 3 illustrates a kind of prior art p district's distribution structural representation;
Fig. 4 illustrates another kind of prior art p district's distribution structural representation;
Fig. 5 illustrates the depletion region floor map of structure shown in Fig. 3;
Fig. 6 illustrates according to a unit depletion region floor map;
Fig. 7 illustrates the Schottky diode depletion region floor map of an embodiment of the utility model;
Fig. 8 illustrates the Schottky diode depletion region floor map of another embodiment of the utility model.
Embodiment
Below with reference to accompanying drawings and in conjunction with the preferred embodiments the utility model is described in detail.
Although for the purpose of introducing, the utility model is the N-shaped material with epitaxial loayer, embedding the p-type district is that example describes for the Schottky diode that exhausts the N-shaped communication channel, it will be appreciated by those skilled in the art that the utility model is equally applicable to as embedding the Schottky diode in N-shaped district in p-type substrate and epitaxial loayer.
In the Schottky diode of for example JBS, usually embed the pn knot is arranged on the surface of epitaxial loayer adjacent metal electrode layer, purpose is that the pn knot is reverse biased when the high pressure reverse bias, the expansion of the depletion region of its generation is come, thereby makes depletion region between the adjacent n form epitaxial loayer ZhongpXing district all communication channel of pinch off that can connect together.The Schottky diode of this structure often can bear close to the height of pn diode withstand voltage.But, the series resistance that the Schottky diode with pn knot has increased because the existence in p-type district has, and because the Schottky contacts area reduced on the whole for forward conduction causes having larger forward voltage drop.Be appreciated that the area and perimeter by reducing the p-type district can effectively reduce conducting resistance, increase current density, improve the performance of device.For the device with identical performance parameter, can reduce size and the electric capacity of device by the area and perimeter that reduces the p-type district.
The bar shaped that current technique generally adopts or rectangular configuration pXing district all occupy larger area.Why the p district of rectangle can occupy larger area is by it not due to the corner of smooth variation, and the depletion region between corner, adjacent p-type district is difficult to overlap.If solve problem by the area that increases rectangle p-type district, the problem of sacrificing device resistance and electric capacity will be brought.
It will be appreciated by those skilled in the art that, it is circular that the depletion region that round-shaped pXing district forms is similarly, and do not have corner, as shown in Figure 6.Simultaneously, circular under identical area in all geometric figures have minimum girth, or circularly under identical girth have a maximum area.Therefore, by adopting circular pXing district design, depletion region evenly can solve to surrounding or internal extended the problem that bring the corner in rectangle p-type district.Further, by a plurality of circular p-type district by the N-shaped epitaxial loayer, in the solid matter mode, distribute, but the p type island region of minimum area solves the problem that near the depletion region in summit, rectangular area can not be overlapping.The circular p-type plot structure of solid matter is owing to having minimum area and perimeter, and series resistance and the capacitance characteristic of device improve, and can obtain having the device of reduced size.
Fig. 7 illustrates the depletion region floor map according to the Schottky diode of an embodiment of the utility model.Fig. 7 illustrates the active area of the circular p-type district distribution that has the solid matter structure in n-type epitaxial loayer.For depletion region energy pinch off communication channel under given reverse bias voltage, shield whole active area, circular p-type district and peripheral nXing district thereof are arranged such that, in the situation that there is reverse bias voltage, for any neighbour's San GepXing district p-type district P1 for example in twos, P2, P3, the edge of each circular p-type district depletion region for example, through the central point between this San GepXing district, central point A.For the Schottky diode of tool performance parameter likely, desirable performance parameter has determined the position relationship between the diameter He GepXing district in circular p-type district.In addition, the diameter in circular p-type district is greater than the depletion widths in reverse bias voltage XiapXing district, to avoid the break-through in the withstand voltage XiapXing district required.
Fig. 8 illustrates the depletion region floor map according to the Schottky diode of another embodiment of the utility model.Fig. 8 illustrates the circular N-shaped district that has the solid matter structure in n-type epitaxial loayer and surrounds pXing district, N-shaped district and distributes.For depletion region energy pinch off communication channel under given reverse bias voltage shields whole active area, circular N-shaped district and peripheral pXing district thereof are arranged such that, for any one circular nXing district, oppositely under bias-voltage, can be completely depleted.For the Schottky diode with desirable performance parameter, this desirable performance parameter has determined the position relationship between the diameter He GenXing district in circular N-shaped district.Interval between circular N-shaped district is greater than the depletion widths in p district under reverse bias voltage, to avoid the break-through in the withstand voltage XiapXing district required.
Abovely by preferred embodiment, the utility model is had been described in detail, but the utility model is not limited to this.Those skilled in the art of the present technique can carry out various modifications according to principle of the present utility model.Therefore, all modifications of doing according to the utility model principle, all should be understood to fall into protection scope of the present invention.
Claims (10)
1. a Schottky diode comprises:
The first electrode layer,
Be positioned at the Semiconductor substrate of the first conduction type on described the first electrode layer;
Be positioned at the semiconductor epitaxial layers of the first conduction type on described Semiconductor substrate;
Be formed on the circular doped region that active area in described epitaxial loayer comprises the second conduction type of a plurality of solid matters,
Be formed on described epitaxial loayer and the second electrode lay contacted with described doped region,
It is characterized in that,
The layout of the circular doped region of described a plurality of the second conduction types makes, under reverse bias voltage, and the depletion region pinch off communication channel formed by described doped region.
2. Schottky diode as claimed in claim 1, it is characterized in that, the layout of the circular doped region of described a plurality of the second conduction types makes, under reverse bias voltage, for any three circular doped regions of neighbour in twos, the depletion region edge of each circular doped region is through the mid point between these three circular doped regions.
3. Schottky diode as claimed in claim 1, is characterized in that, the diameter of the circular doped region of described the second conduction type makes this circle doped region under reverse biased that break-through not occur.
4. Schottky diode as claimed in claim 1, is characterized in that, described semiconductor is carborundum.
5. Schottky diode as claimed in claim 1, is characterized in that, this Schottky diode is junction barrier schottky diode or PIN/ Schottky compound diode.
6. Schottky diode as claimed in claim 1, is characterized in that, described the first conduction type is N-shaped and described the second conduction type is p-type; Perhaps described the first conduction type is p-type, and described the second conduction type is N-shaped.
7. a Schottky diode comprises:
The first electrode layer,
Be positioned at the Semiconductor substrate of the first conduction type on described the first electrode layer;
Be positioned at the semiconductor epitaxial layers of the first conduction type on described Semiconductor substrate;
Active area in described semiconductor epitaxial layers comprises the doped region of second conduction type in the circular epitaxial loayer zone that has a plurality of solid matters therebetween,
Be formed on described epitaxial loayer and the second electrode lay contacted with described doped region,
It is characterized in that,
The layout of described a plurality of circular epitaxial loayer zones and described doped region makes, under reverse bias voltage, and the depletion region pinch off communication channel formed by described doped region.
8. Schottky diode as claimed in claim 7, is characterized in that, the interval between adjacent circular epitaxial loayer zone makes described doped region under reverse biased that break-through not occur.
9. Schottky diode as claimed in claim 7, is characterized in that, described semiconductor is carborundum.
10. Schottky diode as claimed in claim 7, is characterized in that, this Schottky diode is junction barrier schottky diode or PIN/ Schottky compound diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320467664 CN203351612U (en) | 2013-08-01 | 2013-08-01 | Schottky diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320467664 CN203351612U (en) | 2013-08-01 | 2013-08-01 | Schottky diode |
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| CN203351612U true CN203351612U (en) | 2013-12-18 |
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| CN 201320467664 Expired - Lifetime CN203351612U (en) | 2013-08-01 | 2013-08-01 | Schottky diode |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104198909A (en) * | 2014-09-15 | 2014-12-10 | 华东光电集成器件研究所 | Mesa avalanche diode core area measuring method |
| CN109037356A (en) * | 2018-10-15 | 2018-12-18 | 无锡新洁能股份有限公司 | A kind of SiC schottky diode and its manufacturing method of high voltage |
| CN109192790A (en) * | 2018-11-09 | 2019-01-11 | 无锡新洁能股份有限公司 | A kind of SiC schottky diode and its manufacturing method |
| CN111640670A (en) * | 2020-06-02 | 2020-09-08 | 朝阳微电子科技股份有限公司 | Method for manufacturing small-capacitance guiding rectifying tube |
| CN115621329A (en) * | 2022-12-19 | 2023-01-17 | 深圳腾睿微电子科技有限公司 | Cell structure of JBS and corresponding silicon carbide device |
| CN109037356B (en) * | 2018-10-15 | 2024-05-10 | 无锡新洁能股份有限公司 | High-withstand-voltage silicon carbide Schottky diode and manufacturing method thereof |
-
2013
- 2013-08-01 CN CN 201320467664 patent/CN203351612U/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104198909A (en) * | 2014-09-15 | 2014-12-10 | 华东光电集成器件研究所 | Mesa avalanche diode core area measuring method |
| CN104198909B (en) * | 2014-09-15 | 2016-11-23 | 华东光电集成器件研究所 | A kind of measuring method of mesa avalanche diode chip area |
| CN109037356A (en) * | 2018-10-15 | 2018-12-18 | 无锡新洁能股份有限公司 | A kind of SiC schottky diode and its manufacturing method of high voltage |
| CN109037356B (en) * | 2018-10-15 | 2024-05-10 | 无锡新洁能股份有限公司 | High-withstand-voltage silicon carbide Schottky diode and manufacturing method thereof |
| CN109192790A (en) * | 2018-11-09 | 2019-01-11 | 无锡新洁能股份有限公司 | A kind of SiC schottky diode and its manufacturing method |
| CN109192790B (en) * | 2018-11-09 | 2023-08-11 | 无锡新洁能股份有限公司 | Silicon carbide Schottky diode and manufacturing method thereof |
| CN111640670A (en) * | 2020-06-02 | 2020-09-08 | 朝阳微电子科技股份有限公司 | Method for manufacturing small-capacitance guiding rectifying tube |
| CN111640670B (en) * | 2020-06-02 | 2023-11-17 | 朝阳微电子科技股份有限公司 | Manufacturing method of small-capacitance guide rectifying tube |
| CN115621329A (en) * | 2022-12-19 | 2023-01-17 | 深圳腾睿微电子科技有限公司 | Cell structure of JBS and corresponding silicon carbide device |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20131218 |