CN104198909A - Mesa avalanche diode core area measuring method - Google Patents
Mesa avalanche diode core area measuring method Download PDFInfo
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- CN104198909A CN104198909A CN201410465727.7A CN201410465727A CN104198909A CN 104198909 A CN104198909 A CN 104198909A CN 201410465727 A CN201410465727 A CN 201410465727A CN 104198909 A CN104198909 A CN 104198909A
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- avalanche diode
- table top
- top avalanche
- voltage
- diode
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Abstract
The invention discloses a mesa avalanche diode core area measuring method which includes the steps of a) forming an inverse operating electric circuit with a mesa avalanche diode, connecting an ammeter in series in the circuit and respectively connecting a voltmeter and a capacitance meter in parallel to two ends of the mesa avalanche diode; b) determining inverse breakdown voltage VB of the mesa avalanche diode; c) applying different inverse operating voltage to the mesa avalanche diode; d) reading a capacitance value Cn when the inverse operating voltage is equal to Vn; e) repeating the step c), reading a capacitance value Cn+1 when the inverse operating voltage is equal to Vn+1; and f) calculating the core area of the mesa avalanche diode according to a formula. When the mesa avalanche diode is in an inverse operating state, barrier capacitance of a depletion layer can be expressed by the ratio of a charge increment to a reverse bias variation within a certain area of depletion layer, thus, area of an active layer of the mesa avalanche diode core can be calculated according to the formula. The measuring method is accurate and capable of eliminating error caused by human factors.
Description
Technical field
The present invention relates to technical field of semiconductors, specifically a kind of measuring method of table top avalanche diode die area.
Background technology
Known, table top avalanche diode is to utilize the impact ionization of charge carrier in semiconductor structure and transit time two kinds of physical influences and the solid state microwave device that produces negative resistance, at millimeter wave, especially in the solid state power source of three millimeter waves with super band, there is high using value.
For meeting the requirement of avalanche diode high operate frequency and high-output power, diode need adopt mesa structure form, two electrodes are selected the preparation of composite metal layer material, reduce as much as possible Electrodes, the avalanche region of diode active layer and drift region are to prepare by epitaxial growth mode, then by wet etching, form the mesa structure of avalanche diode.Table top avalanche diode active layer area plays conclusive effect to the output power of table top avalanche diode, it affects again other parameters such as frequency of operation of table top avalanche diode simultaneously, so need to be to table top avalanche diode die area, the useful area that is tube core active area is accurately controlled, guarantee consistent with design load, tube core active layer area is too small, bear power low, easily causing that active layer is overheated burns, tube core active layer area is excessive, increase the parameter testing difficulty of rear operation, affect the consistance of properties of product, reduce finished product rate.
At present, generally by the microscopical tracking cross location survey of optical measurement method, measure the diameter of tube core active layer, the computing formula of the recycling area of a circle draws avalanche diode tube core active layer area, but this method has following shortcoming: the tube core of table top avalanche diode is spatial structure, reason due to aspects such as gauger's visual determination, cause the initial and terminating point position of microscope cross positioning cursor that the deviation of aspect is set, be not easy to measure more exactly tube core diameter; In addition, in avalanche diode mesa structure forming process, because corrosive liquid is different to the corrosion rate of electrode different metal material and epitaxial loayer, cause along different perpendicular to the circular diameter of avalanche diode mesa structure direction, active area caves inward, so utilize the metering system of measuring microscope, cannot measure exactly the diameter at the place that caves inward, can only measure the diameter of approximate excircle configuration, such measuring method is usually with artificial subjective factor, to accurately determining that avalanche diode die area exerts an influence.
Summary of the invention
The object of the present invention is to provide a kind of measuring method of table top avalanche diode die area, this measuring method can be measured the active layer area of table top avalanche diode tube core exactly, eliminates the error that human factor is brought.
The technical solution adopted for the present invention to solve the technical problems is:
A measuring method for table top avalanche diode die area, comprises following steps:
A) positive pole of table top snowslide diode connects the negative pole of power supply, and the positive pole that the negative pole of table top snowslide diode connects power supply forms electric loop; Reometer is connected in electric loop, at the two ends of table top avalanche diode difference shunt voltage table and capacitance meter;
B) table top avalanche diode is applied to reverse voltage, by reometer, monitor the current change quantity of table top avalanche diode under anti-phase duty, determine the breakdown reverse voltage V of table top avalanche diode
b;
C) table top avalanche diode is applied to different working inverse voltages;
D) reading working inverse voltage is V
ntime capacitance C
n;
E) repeating step c, and to read working inverse voltage be V
n+1time capacitance C
n+1;
F) according to formula
calculate the active layer area of table top avalanche diode tube core, in formula, S is table top avalanche diode tube core active layer area, and q is electric charge,
ε sfor semiconductor specific inductive capacity, N
dlightly doped matrix concentration.
The invention has the beneficial effects as follows, because table top avalanche diode is under reverse operation state, junction capacity is exactly depletion layer barrier capacitance, its size can represent with the electric charge increment of certain area depletion layer and the ratio of applied reverse bias voltage variable quantity, so table top avalanche diode is applied to reverse voltage, record its capacitance, just can further calculate the active layer area of table top avalanche diode tube core, this method is measured accurately, can eliminate the error that human factor is brought.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described:
Fig. 1 is the instrumentation plan of the embodiment of the present invention;
Fig. 2 is embodiment of the present invention table top avalanche diode one-sided step junction schematic diagram under thermal equilibrium state;
Fig. 3 is the distribution of space charge figure of p-n junction in Fig. 2;
Fig. 4 is at the distribution map of the electric field of depletion region in Fig. 2;
Fig. 5 is the potential profile that in Fig. 2, p-n junction changes with distance in depletion region;
Fig. 6 is the width of depletion region of table top avalanche diode p-n junction under thermal equilibrium state and can be with presentation graphs;
Fig. 7 is the width of depletion region of table top avalanche diode p-n junction under forward bias and can be with presentation graphs;
Fig. 8 is the width of depletion region of table top avalanche diode p-n junction under reverse biased and can be with presentation graphs;
Fig. 9 is the structural representation of table top avalanche diode in the present invention;
Figure 10 is the vertical view of Fig. 9;
Figure 11 is that in silicon chip, table top snowslide diode measurement point is selected schematic diagram.
Embodiment
The invention provides a kind of measuring method of table top avalanche diode die area, the SDR single drift region table top avalanche diode of take is example, comprises following steps:
A) as shown in Figure 1, the positive pole of table top snowslide diode 30 connects the negative pole of power supply, and the positive pole that the negative pole of table top snowslide diode 30 connects power supply forms electric loop; Reometer A is connected in electric loop, at the two ends of table top avalanche diode 30 difference shunt voltage Table V and capacitance meter C;
B) table top avalanche diode 30 is applied to reverse voltage, by reometer A, monitor the current change quantity of table top avalanche diode under reverse voltage duty, determine the breakdown reverse voltage V of table top avalanche diode
b; When the indicated value of reometer A electric current is 5mA, the magnitude of voltage of now voltage table V indication is breakdown reverse voltage V
b;
C) at 0～(V
b-0.5V), in voltage range, table top avalanche diode is applied to different working inverse voltages;
D) reading reverse voltage is V
ntime capacitance C
n;
E) repeating step c, and to read reverse voltage be V
n+1time capacitance C
n+1;
F) according to formula
(5) calculate the active layer area of table top avalanche diode tube core, in formula, S is table top avalanche diode tube core active layer area, and q is electric charge,
ε sfor semiconductor specific inductive capacity, N
dlightly doped matrix concentration.
Shown in Fig. 2～Fig. 5, N in figure
dlightly doped matrix concentration, N
aheavily doped matrix concentration, x
nrepresent n side width of depletion region, represent electromotive force, be illustrated in the maximum field at x=0 place, V
biit is Built-in potential, SDR single drift region table top avalanche diode is used monolateral sudden change p-n junction, the doping content that is abrupt junction one side is high more than opposite side, when the reverse biased of p-n junction is added to after a certain critical value, charge carrier will obtain enough kinetic energy, and produce electron-hole pair by the collision with lattice and bond rupture, highfield will speed up the electron-hole pair of new generation, and these new electron-hole pairs, again with lattice collisions, produce more electron-hole pair, in avalanche process continues to carry out, p-n junction is breakdown and conduct a large electric current, table top avalanche diode utilizes this physical characteristics exactly, in high-frequency high-power, be applied.At thermal equilibrium state and without under applying bias voltage, width of depletion region W can be expressed as:
(1), in formula (1)
ε sbe semiconductor specific inductive capacity, q is electric charge, V
bibuilt-in potential, N
dlightly doped matrix concentration.
Shown in Fig. 6～Fig. 8, N in figure
cenergy at the bottom of expression conduction band, N
vrepresent top of valence band energy, E
frepresent Fermi level, Fig. 6 is illustrated in not to be had under applying bias, width of depletion region W and the energy band diagram of avalanche diode when thermal equilibrium state, and its energy band diagram shows that the total electrostatic potential across p-n junction is V
bi, from p, hold n to hold its corresponding electric potential difference to be
qv
bi; Fig. 7 is illustrated in p end and holds additional forward bias V with respect to n
f, stride across the total electrostatic potential of p-n junction and reduce V
f, so forward bias reduces width of depletion region; Fig. 8 is illustrated in p end with respect to n end applied reverse bias voltage V
r, striding across the total electrostatic potential of p-n junction increases V
r, so reverse biased will increase width of depletion region.Table top avalanche diode is under applied reverse bias voltage, and by these voltage substitution formula (1), the equation that obtains one-sided step junction avalanche diode width of depletion region and bias voltage is:
?(2)
For forward bias, V be on the occasion of; For reverse biased, V is negative value.
Shown in Fig. 9, the tube core n of table top avalanche diode 30
+be 31 with outside connecting end surface, the tube core p of table top avalanche diode 30
+with outside connecting end surface be 35, the active layer of table top avalanche diode tube core is 33; Shown in Figure 10, the active layer area of table top avalanche diode tube core is 36; Under diode p-n junction reverse voltage duty, junction capacity is exactly depletion layer barrier capacitance, and its size can represent with the ratio of the electric charge increment of certain area depletion layer and the variable quantity of applied reverse bias voltage, and its expression formula is:
（3）
C in formula (3)
nfor applied reverse bias voltage V
ntime electric capacity, Q is the quantity of electric charge.
The formula that can release table top avalanche diode active layer area S from formula (3) is:
（4）
Due to Built-in potential V
birelevant with temperature, with the temperature variation of environment, change, so formula (4) can not directly be used for calculating the area S of table top avalanche diode tube core active layer, formula (4) need to be converted to cancellation Built-in potential V wherein
bi, derivation is as follows:
Formula (4) both sides are multiplied by simultaneously square again
can draw table top avalanche diode active layer area S, anti-phase operating voltage V
n, junction capacity C
nand Built-in potential V
bibetween relational expression:
（4-1）
According to same method, can draw table top avalanche diode active layer area S, anti-phase operating voltage V
n+1, junction capacity C
n+1and Built-in potential V
bibetween relational expression:
(4-2)
Formula (4-1) is deducted to formula (4-2) to be obtained:
（4-3）
Formula (4-3) both sides are multiplied by simultaneously
, after abbreviation, both sides extraction of square root can draw the active layer area computing formula of table top avalanche diode tube core:
（5）
Thereby according to formula (5), calculate the active layer area S of table top avalanche diode tube core.
Shown in Figure 11, owing to often comprising a hundreds of table top avalanche diode tube core on a silicon chip 60, so the table top avalanche diode tube core of selection 61,62,63,64 and 65 5 positions is tested, as long as the measurement area of this table top avalanche diode tube core of 5 meets design requirement, so can judge that the table top avalanche diode die area on whole silicon chip meets the demands substantially; In actual measurement, tend to measure the capacitance under many group reverse voltages, according to formula (5) reference area, average respectively, to increase the accuracy of measurement; The table top avalanche diode tube core 61 of take is example, and according to step, a connects, and determines the magnitude of voltage V under its anti-phase puncturing according to step b
b, according to step c～e, table top avalanche diode tube core applied a series of working inverse voltage and measure capacitance corresponding to it afterwards: when additional reverse bias voltage equals 0V, measuring capacitance now, be designated as respectively V
1, C
1; In additional reverse bias voltage value, equal V
bduring-0.5V, measure capacitance now, be designated as respectively V
11, C
11; Then, respectively at the back biased voltage 0.2V～(V of table top avalanche diode
b-2V) in scope, ascendingly choose successively corresponding voltage, capacitance under 9 different test job points, and they are designated as respectively to V
2, C
2, V
3, C
3, V
4, C
4, V
5, C
5, V
6, C
6, V
7, C
8, V
9, C
9, V
10, C
10; According to the known light dope matrix concentration of table top avalanche diode, by formula (5), calculate table top avalanche diode tube core active layer area S
1, S
2, S
3s
10, then average, obtain table top avalanche diode tube core active layer area S; Same, according to the method described above, calculate respectively the area of the table top avalanche diode tube core active layer at 62,63,64 and 65 places, measured point, and then whether the table top avalanche diode tube core of judging on whole silicon chip meets the demands.
The above, be only preferred embodiment of the present invention, not the present invention done to any pro forma restriction; Any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, be equal to replacements, equivalence changes and modify, all still belong in the scope that technical solution of the present invention protects.
Claims (1)
1. a measuring method for table top avalanche diode die area, is characterized in that, described method comprises following steps:
A) positive pole of table top snowslide diode (30) connects the negative pole of power supply, and the positive pole that the negative pole of table top snowslide diode (30) connects power supply forms electric loop; Reometer (A) is connected in electric loop, at two ends difference shunt voltage tables (V) and the capacitance meter (C) of table top avalanche diode;
B) table top avalanche diode is applied to reverse voltage, by reometer (A), monitor the current change quantity of table top avalanche diode under anti-phase duty, determine the breakdown reverse voltage V of table top avalanche diode
b;
C) table top avalanche diode is applied to different working inverse voltages;
D) reading working inverse voltage is V
ntime capacitance C
n;
E) repeating step c, and to read working inverse voltage be V
n+1time capacitance C
n+1;
F) according to formula
calculate the active layer area of table top avalanche diode tube core, in formula, S is table top avalanche diode tube core active layer area, and q is electric charge,
ε sfor semiconductor specific inductive capacity, N
dlightly doped matrix concentration.
Priority Applications (1)
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|---|---|---|---|
| CN201410465727.7A CN104198909B (en) | 2014-09-15 | 2014-09-15 | A kind of measuring method of mesa avalanche diode chip area |
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|---|---|---|---|
| CN201410465727.7A CN104198909B (en) | 2014-09-15 | 2014-09-15 | A kind of measuring method of mesa avalanche diode chip area |
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| Publication Number | Publication Date |
|---|---|
| CN104198909A true CN104198909A (en) | 2014-12-10 |
| CN104198909B CN104198909B (en) | 2016-11-23 |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63121763A (en) * | 1986-11-10 | 1988-05-25 | Nec Corp | Instrument for measuring characteristics of avalanche photodiode |
| JPH05203697A (en) * | 1992-01-24 | 1993-08-10 | Nippon Telegr & Teleph Corp <Ntt> | Method for measuring and extracting junction capacitance of transistor |
| US6111299A (en) * | 1997-06-25 | 2000-08-29 | Advanced Photonix, Inc. | Active large area avalanche photodiode array |
| US20060226863A1 (en) * | 2005-03-31 | 2006-10-12 | Narendra Siva G | Method and apparatus to adjust die frequency |
| CN101036216A (en) * | 2004-04-30 | 2007-09-12 | 派克米瑞斯有限责任公司 | Planar avalanche photodiode |
| US20090315073A1 (en) * | 2008-06-19 | 2009-12-24 | National Central University | Avalanche Photodiode |
| CN102521433A (en) * | 2011-11-21 | 2012-06-27 | 上海华虹Nec电子有限公司 | Equivalent circuit of positive-intrinsic negative (PIN) diode and parameter acquisition method thereof |
| CN103389451A (en) * | 2013-07-24 | 2013-11-13 | 广东瑞谷光纤通信有限公司 | Testing method and testing device of avalanche photodiode |
| CN203351612U (en) * | 2013-08-01 | 2013-12-18 | 泰科天润半导体科技（北京）有限公司 | Schottky diode |
-
2014
- 2014-09-15 CN CN201410465727.7A patent/CN104198909B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63121763A (en) * | 1986-11-10 | 1988-05-25 | Nec Corp | Instrument for measuring characteristics of avalanche photodiode |
| JPH05203697A (en) * | 1992-01-24 | 1993-08-10 | Nippon Telegr & Teleph Corp <Ntt> | Method for measuring and extracting junction capacitance of transistor |
| US6111299A (en) * | 1997-06-25 | 2000-08-29 | Advanced Photonix, Inc. | Active large area avalanche photodiode array |
| CN101036216A (en) * | 2004-04-30 | 2007-09-12 | 派克米瑞斯有限责任公司 | Planar avalanche photodiode |
| US20060226863A1 (en) * | 2005-03-31 | 2006-10-12 | Narendra Siva G | Method and apparatus to adjust die frequency |
| US20090315073A1 (en) * | 2008-06-19 | 2009-12-24 | National Central University | Avalanche Photodiode |
| CN102521433A (en) * | 2011-11-21 | 2012-06-27 | 上海华虹Nec电子有限公司 | Equivalent circuit of positive-intrinsic negative (PIN) diode and parameter acquisition method thereof |
| CN103389451A (en) * | 2013-07-24 | 2013-11-13 | 广东瑞谷光纤通信有限公司 | Testing method and testing device of avalanche photodiode |
| CN203351612U (en) * | 2013-08-01 | 2013-12-18 | 泰科天润半导体科技（北京）有限公司 | Schottky diode |
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| CN104198909B (en) | 2016-11-23 |
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