CN103389451A - Testing method and testing device of avalanche photodiode - Google Patents
Testing method and testing device of avalanche photodiode Download PDFInfo
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- CN103389451A CN103389451A CN2013103151511A CN201310315151A CN103389451A CN 103389451 A CN103389451 A CN 103389451A CN 2013103151511 A CN2013103151511 A CN 2013103151511A CN 201310315151 A CN201310315151 A CN 201310315151A CN 103389451 A CN103389451 A CN 103389451A
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Abstract
The invention discloses a testing method of an avalanche photodiode, which is characterized by comprising the following steps that (1), a function control circuit and a testing circuit are arranged on a circuit mainboard, and the function control circuit tests the avalanche photodiode through controlling the testing circuit; (2), a sensitivity testing amplitude limiting amplification circuit, a reverse breakdown voltage testing circuit and a light current and dark current testing circuit are arranged in the testing circuit in Step (1); and (3), a Boost high voltage generation circuit, a linear voltage stabilization filter circuit, a constant current source generation circuit, a feedback type IV (current-voltage) conversion circuit, an isolated power supply circuit and an optocoupler transmission circuit which are connected sequentially are arranged in the testing circuits in Step (2). The invention further discloses a testing device of the avalanche photodiode, which implements the method.
Description
Technical field
The present invention relates to field of photoelectric technology, be specifically related to a kind of method of testing of avalanche photodide, and the avalanche photodide proving installation of implementing the method.
Background technology
Avalanche photodide is that a kind of light of p-n junction type detects diode, has wherein utilized the avalanche multiplication effect of charge carrier to amplify photosignal to improve the sensitivity that detects.Its basic structure usually adopts the Read diode structure (be N+PIP+ type structure, P+ simultaneously receives light) of easy generation avalanche multiplication effect, adds larger reverse biased during work, makes it reach the avalanche multiplication state; Its light absorption district and multiplication region basically identical (being P district and the I district that has high electric field).
The method of the breakdown reverse voltage of traditional test avalanche photodide is, increase gradually test voltage at the avalanche photodide negative pole end,, until avalanche photodide is breakdown, then measure the voltage of this moment, be breakdown reverse voltage, the testing efficiency of this test mode is lower.When test avalanche photodide photocurrent and dark current, adopt the image current test mode, this mode, have mirror image impact out of proportion, makes the precision of measuring the dark current responsiveness not high.
Summary of the invention
The objective of the invention is for the above-mentioned deficiency of prior art, a kind of method of testing of avalanche photodide is provided, and the avalanche photodide proving installation of implementing the method, adopt constant flow method to measure the breakdown reverse voltage of avalanche photodide, thereby greatly improve the breakdown reverse voltage measuring speed; Adopt reaction type IV conversion, and measure part and avalanche photodide isolated from power, greatly improve the measuring accuracy of test dark current responsiveness.
The technical scheme that the present invention adopts for achieving the above object is:
A kind of method of testing of avalanche photodide, it comprises the following steps:
(1) on circuit main board, interconnective function control circuit and test circuit are set, wherein, described function control circuit, by controlling test circuit, is tested avalanche photodide;
(2) in the described test circuit of step (1), the sensitivity test amplitude limiting amplifier circuit is set, breakdown reverse voltage test circuit and photocurrent, dark current test circuit;
(3) in the described breakdown reverse voltage test circuit of step (2), the Boost high voltage generation circuit that connects successively is set, linear voltage stabilization filtering circuit and constant current source generating circuit; In the described photocurrent of step (2), dark current test circuit, interconnective reaction type IV change-over circuit is set, insulating power supply circuit and optocoupler transmission circuit;
Current direction while (4) working, at first by the Boost high voltage generation circuit, produce high-voltage signal, then high-voltage signal is transferred to the linear voltage stabilization filtering circuit, this high-voltage signal is carried out voltage stabilizing except making an uproar processing, enter again the constant current source generating circuit, then seal in the IV translation circuit, enter the negative pole of avalanche photodide when last;
(5) when testing the breakdown reverse voltage of avalanche photodide, supplying with the voltage of avalanche photodide presses far above the avalanche photodide voltage breakdown. and high voltage punctures avalanche photodide, and the constant current effect of constant current source makes the avalanche photodide both end voltage be limited in the reflection voltage breakdown, and the pressure drop of reaction type IV conversion is very low, so that can ignore,, so read the voltage of constant current source output terminal this moment, be the breakdown reverse voltage of avalanche photodide;
(6) when the test photocurrent of avalanche photodide and dark current, by reaction type IV change-over circuit, the voltage that obtains after current conversion becomes digital signal through ADC, then by optocoupler, is transferred to main control part.
The described Boost high voltage generation circuit of step (3), produce 10～100V voltage.
The described constant current source generating circuit of step (3), the mirror current source of a high pressure of generation.
In the described reaction type IV of step (3) change-over circuit, be provided with range switch circuit.
A kind of proving installation of implementing above-mentioned avalanche photodide method of testing, on circuit main board, be provided with interconnective function control circuit and test circuit, wherein, described function control circuit, by controlling test circuit, is tested avalanche photodide; In described test circuit, be provided with breakdown reverse voltage test circuit and photocurrent, dark current test circuit;
In described breakdown reverse voltage test circuit, be provided with the sensitivity test amplitude limiting amplifier circuit, Boost high voltage generation circuit, linear voltage stabilization filtering circuit and the constant current source generating circuit that connect successively.
Described Boost high voltage generation circuit, produce 10～100V voltage; Described constant current source generating circuit, the mirror current source of a high pressure of generation.
In described photocurrent, dark current test circuit, be provided with interconnective reaction type IV change-over circuit, insulating power supply circuit and optocoupler transmission circuit.
In described reaction type IV change-over circuit, be provided with range switch circuit.
The invention has the beneficial effects as follows: with constant flow method, measure breakdown reverse voltage, add 60V voltage (the maximum reverse voltage breakdown of sample is lower than 60V) on avalanche photodide, constant 10uA electric current, directly measure the breakdown reverse voltage that the avalanche photodide both end voltage is sample, compare tradition and measure breakdown reverse voltage by progressively increasing voltage, speed improves greatly.Adopt reaction type IV conversion, measure part and avalanche photodide isolated from power, with traditional image current mode current measurement, there is no mirror image impact out of proportion, reaction type IV conversion makes the current measurement part, the impact of avalanche photodide voltage measurement part is dropped to minimum, thereby improve the measuring accuracy of dark current responsiveness.
Description of drawings
Fig. 1 is block diagram of the present invention;
Fig. 2 is sensitivity test amplitude limiting amplifier circuit schematic diagram of the present invention;
Fig. 3 is Boost high voltage generation circuit schematic diagram of the present invention;
Fig. 4 is that linear voltage stabilization filtering circuit of the present invention and constant current source produce circuit diagram;
Fig. 5 is reaction type IV change-over circuit schematic diagram of the present invention;
Fig. 6 is insulating power supply circuit of the present invention and optocoupler transmission circuit schematic diagram;
Fig. 7 is function control circuit schematic diagram of the present invention.
Embodiment
Embodiment: referring to Fig. 1 to Fig. 6, the method for testing of the avalanche photodide that the present embodiment provides, it comprises the following steps:
(1) on circuit main board, interconnective function control circuit and test circuit are set, wherein, described function control circuit, by controlling test circuit, is tested avalanche photodide;
(2) in the described test circuit of step (1), the sensitivity test amplitude limiting amplifier circuit is set, breakdown reverse voltage test circuit and photocurrent, dark current test circuit;
(3) in the described breakdown reverse voltage test circuit of step (2), the Boost high voltage generation circuit that connects successively is set, linear voltage stabilization filtering circuit and constant current source generating circuit; In the described photocurrent of step (2), dark current test circuit, interconnective reaction type IV change-over circuit is set, insulating power supply circuit and optocoupler transmission circuit;
Current direction while (4) working, at first by the Boost high voltage generation circuit, produce high-voltage signal, then high-voltage signal is transferred to the linear voltage stabilization filtering circuit, this high-voltage signal is carried out voltage stabilizing except making an uproar processing, enter again the constant current source generating circuit, then seal in the IV translation circuit, enter the negative pole of avalanche photodide when last;
(5) when testing the breakdown reverse voltage of avalanche photodide, supplying with the voltage of avalanche photodide presses far above the avalanche photodide voltage breakdown. and high voltage punctures avalanche photodide, and the constant current effect of constant current source makes the avalanche photodide both end voltage be limited in the reflection voltage breakdown, and the pressure drop of reaction type IV conversion is very low, so that can ignore,, so read the voltage of constant current source output terminal this moment, be the breakdown reverse voltage of avalanche photodide;
(6) when the test photocurrent of avalanche photodide and dark current, by reaction type IV change-over circuit, the voltage that obtains after current conversion becomes digital signal through ADC, then by optocoupler, is transferred to main control part.
The described Boost high voltage generation circuit of step (3), produce 10～100V voltage.
The described constant current source generating circuit of step (3), the mirror current source of a high pressure of generation.
In the described reaction type IV of step (3) change-over circuit, be provided with range switch circuit, for the test of different model avalanche photodide.
A kind of proving installation of implementing above-mentioned avalanche photodide method of testing, on circuit main board, be provided with interconnective function control circuit and test circuit, wherein, described function control circuit, by controlling test circuit, is tested avalanche photodide; In described test circuit, be provided with breakdown reverse voltage test circuit and photocurrent, dark current test circuit.
In described breakdown reverse voltage test circuit, be provided with the sensitivity test amplitude limiting amplifier circuit, Boost high voltage generation circuit, linear voltage stabilization filtering circuit and the constant current source generating circuit that connect successively.
Described Boost high voltage generation circuit, produce 10～100V voltage; Described constant current source generating circuit, the mirror current source of a high pressure of generation.
In described photocurrent, dark current test circuit, be provided with interconnective reaction type IV change-over circuit, insulating power supply circuit and optocoupler transmission circuit.
In described reaction type IV change-over circuit, be provided with range switch circuit, for the test of different model avalanche photodide.
But the foregoing is only better possible embodiments of the present invention,, not in order to limit to the scope of the claims of the present invention,, therefore the equivalent structure that all utilizations instructions of the present invention and accompanying drawing content are done changes, all be included in protection scope of the present invention.
Claims (9)
1. the method for testing of an avalanche photodide, is characterized in that, it comprises the following steps:
(1) on circuit main board, interconnective function control circuit and test circuit are set, wherein, described function control circuit, by controlling test circuit, is tested avalanche photodide;
(2) in the described test circuit of step (1), the sensitivity test amplitude limiting amplifier circuit is set, breakdown reverse voltage test circuit and photocurrent, dark current test circuit;
(3) in the described breakdown reverse voltage test circuit of step (2), the Boost high voltage generation circuit that connects successively is set, linear voltage stabilization filtering circuit and constant current source generating circuit; In the described photocurrent of step (2), dark current test circuit, interconnective reaction type IV change-over circuit is set, insulating power supply circuit and optocoupler transmission circuit;
Current direction while (4) working, at first by the Boost high voltage generation circuit, produce high-voltage signal, then high-voltage signal is transferred to the linear voltage stabilization filtering circuit, this high-voltage signal is carried out voltage stabilizing except making an uproar processing, enter again the constant current source generating circuit, then seal in the IV translation circuit, enter the negative pole of avalanche photodide when last;
(5) when testing the breakdown reverse voltage of avalanche photodide, supplying with the voltage of avalanche photodide presses far above the avalanche photodide voltage breakdown, high voltage punctures avalanche photodide, and the constant current effect of constant current source makes the avalanche photodide both end voltage be limited in the reflection voltage breakdown, and the pressure drop of reaction type IV conversion is very low, so that ignore,, so read the voltage of constant current source output terminal this moment, be the breakdown reverse voltage of avalanche photodide;
(6) when the test photocurrent of avalanche photodide and dark current, by reaction type IV change-over circuit, the voltage that obtains after current conversion becomes digital signal through ADC, then by optocoupler, is transferred to main control part.
2. the method for testing of avalanche photodide according to claim 1, is characterized in that, the described Boost high voltage generation circuit of step (3) produces 10～100V voltage.
3. the method for testing of avalanche photodide according to claim 1, is characterized in that, the described constant current source generating circuit of step (3), the mirror current source of a high pressure of generation.
4. the method for testing of avalanche photodide according to claim 1, is characterized in that, in the described reaction type IV of step (3) change-over circuit, is provided with range switch circuit, with extend current measurement range and precision.
5. proving installation that implements the claims 1 described avalanche photodide method of testing, it is characterized in that, on circuit main board, be provided with interconnective function control circuit and test circuit, wherein, described function control circuit, by controlling test circuit, is tested avalanche photodide; In described test circuit, be provided with breakdown reverse voltage test circuit and photocurrent, dark current test circuit.
6. the proving installation of avalanche photodide according to claim 5, it is characterized in that, in described breakdown reverse voltage test circuit, be provided with the sensitivity test amplitude limiting amplifier circuit that connects successively, Boost high voltage generation circuit, linear voltage stabilization filtering circuit and constant current source generating circuit.
7. the proving installation of avalanche photodide according to claim 6, is characterized in that, described Boost high voltage generation circuit produces 10～100V voltage; Described constant current source generating circuit, the mirror current source of a high pressure of generation.
8. the proving installation of avalanche photodide according to claim 5, is characterized in that, in described photocurrent, dark current test circuit, is provided with interconnective reaction type IV change-over circuit, insulating power supply circuit and optocoupler transmission circuit.
9. the proving installation of avalanche photodide according to claim 8, is characterized in that, in described reaction type IV change-over circuit, is provided with range switch circuit.
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| CN103630780A (en) * | 2013-11-22 | 2014-03-12 | 武汉电信器件有限公司 | Automatic test system and method for detector sensitivity optimal value and overload value |
| CN104198909A (en) * | 2014-09-15 | 2014-12-10 | 华东光电集成器件研究所 | Mesa avalanche diode core area measuring method |
| CN105548848A (en) * | 2015-12-11 | 2016-05-04 | 武汉中派科技有限责任公司 | Device, equipment and method for measuring breakdown voltage |
| CN105954662A (en) * | 2016-06-18 | 2016-09-21 | 温州大学 | Power diode reverse breakdown voltage grading test apparatus |
| CN106841970A (en) * | 2017-03-02 | 2017-06-13 | 成都优博创通信技术股份有限公司 | Calculate the method and its circuit of APD breakdown voltages |
| CN107290639A (en) * | 2017-06-08 | 2017-10-24 | 金华职业技术学院 | A kind of method for the linearity for measuring photodiode response |
| CN109633404A (en) * | 2019-01-17 | 2019-04-16 | 金陵科技学院 | A kind of avalanche photodetector electrology characteristic test macro based on PXI |
| CN110687424A (en) * | 2019-10-10 | 2020-01-14 | 华东光电集成器件研究所 | Avalanche diode high-frequency parameter low-temperature test system |
| CN110726919A (en) * | 2019-10-25 | 2020-01-24 | 中国电子科技集团公司第四十四研究所 | Array APD photoelectric parameter testing system |
| KR102093041B1 (en) * | 2018-11-20 | 2020-04-21 | 한국표준과학연구원 | System and Method for evaluating performance of Photon counting sensor |
| CN113358992A (en) * | 2021-05-12 | 2021-09-07 | 武汉光谷量子技术有限公司 | Method for acquiring critical parameters of avalanche diode |
| CN113589093A (en) * | 2021-09-30 | 2021-11-02 | 武汉普赛斯电子技术有限公司 | Drive test device and method for APD device |
| RU2778045C1 (en) * | 2021-11-22 | 2022-08-12 | Акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" | Method for stabilizing the avalanche mode of a photodiode |
| CN116027159A (en) * | 2023-01-30 | 2023-04-28 | 宁波群芯微电子股份有限公司 | Optocoupler voltage-resistant quality control method and optocoupler voltage-resistant test circuit |
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| CN104198909A (en) * | 2014-09-15 | 2014-12-10 | 华东光电集成器件研究所 | Mesa avalanche diode core area measuring method |
| CN104198909B (en) * | 2014-09-15 | 2016-11-23 | 华东光电集成器件研究所 | A kind of measuring method of mesa avalanche diode chip area |
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| CN105954662A (en) * | 2016-06-18 | 2016-09-21 | 温州大学 | Power diode reverse breakdown voltage grading test apparatus |
| CN106841970A (en) * | 2017-03-02 | 2017-06-13 | 成都优博创通信技术股份有限公司 | Calculate the method and its circuit of APD breakdown voltages |
| CN107290639A (en) * | 2017-06-08 | 2017-10-24 | 金华职业技术学院 | A kind of method for the linearity for measuring photodiode response |
| KR102093041B1 (en) * | 2018-11-20 | 2020-04-21 | 한국표준과학연구원 | System and Method for evaluating performance of Photon counting sensor |
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| CN110687424A (en) * | 2019-10-10 | 2020-01-14 | 华东光电集成器件研究所 | Avalanche diode high-frequency parameter low-temperature test system |
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| CN110726919A (en) * | 2019-10-25 | 2020-01-24 | 中国电子科技集团公司第四十四研究所 | Array APD photoelectric parameter testing system |
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| CN113358992A (en) * | 2021-05-12 | 2021-09-07 | 武汉光谷量子技术有限公司 | Method for acquiring critical parameters of avalanche diode |
| CN113589093A (en) * | 2021-09-30 | 2021-11-02 | 武汉普赛斯电子技术有限公司 | Drive test device and method for APD device |
| CN113589093B (en) * | 2021-09-30 | 2021-12-28 | 武汉普赛斯电子技术有限公司 | Drive test device and method for APD device |
| RU2778045C1 (en) * | 2021-11-22 | 2022-08-12 | Акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" | Method for stabilizing the avalanche mode of a photodiode |
| CN116027159A (en) * | 2023-01-30 | 2023-04-28 | 宁波群芯微电子股份有限公司 | Optocoupler voltage-resistant quality control method and optocoupler voltage-resistant test circuit |
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