CN202339395U - Luminous efficiency detection system of semiconductor luminous apparatus - Google Patents
Luminous efficiency detection system of semiconductor luminous apparatus Download PDFInfo
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- CN202339395U CN202339395U CN201120522917XU CN201120522917U CN202339395U CN 202339395 U CN202339395 U CN 202339395U CN 201120522917X U CN201120522917X U CN 201120522917XU CN 201120522917 U CN201120522917 U CN 201120522917U CN 202339395 U CN202339395 U CN 202339395U
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Abstract
The utility model discloses a luminous efficiency detection system of a semiconductor luminous apparatus, and belongs to the technical field of the detection of the semiconductor luminous apparatuses. By using the luminous efficiency detection system, the problem that the measurement efficiency on the luminous efficiency of the semiconductor luminous apparatus at present is quite low is solved. A to-be-detected semiconductor luminous apparatus of the luminous efficiency detection system is arranged in an integrating sphere and is connected in series between two current output ends of a standard power source; a control signal input end of the standard power source is connected with a control signal output end of a singlechip; a cathode and an anode of the to-be-detected semiconductor luminous apparatus are respectively connected with two voltage signal input ends of a junction voltage measuring module; a voltage signal output end of the junction voltage measuring module is connected with a voltage signal input end of the singlechip; a photoelectric sensor is used for receiving a light flux signal of the to-be-detected semiconductor luminous apparatus and outputting the light flux signal to a light flux measuring module; and a light flux signal output end of the light flux measuring module is connected with a light flux signal input end of the singlechip. The luminous efficiency detection system is used for detecting the luminous efficiency of the semiconductor luminous apparatus.
Description
Technical field
The utility model relates to a kind of luminescence efficiency detection system of light emitting semiconductor device, belongs to the detection technique field of light emitting semiconductor device.
Background technology
Along with the progress and the development of science and technology, the semi-conductive power of LED increases gradually, and the LED semiconductor devices direction from traditional indicator feature towards illumination functions develops.At present, the LED semiconductor lighting is because of plurality of advantages such as its green, environmental protection, is considered to replace that power consumptions such as incandescent lamp, fluorescent light are big, the revolutionary solid light source of the traditional lighting light source of contaminated environment.The luminescence efficiency of LED semiconductor devices is to weigh the most important technical indicator of LED quality level.Testing this index generally adopts reometer, voltage table at present, stablizes separation devices such as source and integrating sphere and carry out; The light efficiency of LED is drawn by manual calculation after through above measuring multiple parameters, therefore very low to the efficiency of measurement of light emitting semiconductor device LED luminescence efficiency.
The utility model content
The utility model is in order to solve at present the low-down problem of efficiency of measurement to the luminescence efficiency of light emitting semiconductor device, a kind of luminescence efficiency detection system of light emitting semiconductor device to be provided.
The luminescence efficiency detection system of the said light emitting semiconductor device of the utility model comprises integrating sphere, and it also comprises calibration power source, junction voltage measurement module, luminous flux measurement module, single-chip microcomputer and photoelectric sensor,
Light emitting semiconductor device to be measured places in the integrating sphere, and this light emitting semiconductor device is connected between two current output terminals in calibration power source, and the signal input end in calibration power source connects the control signal output ends of single-chip microcomputer,
The negative electrode of light emitting semiconductor device to be measured and anode be two voltage signal input ends of johning knot voltage measurement module respectively, and the voltage signal output end of junction voltage measurement module connects the voltage signal input end of single-chip microcomputer,
Photoelectric sensor is used to receive the light quantity signal of light emitting semiconductor device to be measured; The light quantity signal output terminal of photoelectric sensor connects the light quantity signal input end of luminous flux measurement module, and the light quantity signal output terminal of luminous flux measurement module connects the light quantity signal input end of single-chip microcomputer.
It also comprises display unit, and the shows signal input end of display unit connects the shows signal output terminal of single-chip microcomputer.
It also comprises keyboard, and the preset signal output terminal of keyboard connects the preset signal input end of single-chip microcomputer.
The utility model has the advantages that: the utility model is made up of integrating sphere and secondary instrument two parts; It is through the acquisition to luminous flux and voltage signal; And then by single-chip microcomputer through calculating the luminescence efficiency that directly obtains light emitting semiconductor device to be measured; Have characteristics such as measuring accuracy height, measurement range is wide, measuring speed is fast, and is easy to operate.
The accuracy that the utility model is measured light emitting semiconductor device luminescence efficiency to be measured is superior to ± and 5%.
Description of drawings:
Fig. 1 is the structural representation of the utility model.
Embodiment
Embodiment one: below in conjunction with Fig. 1 this embodiment is described, this embodiment comprises integrating sphere 1, and it also comprises calibration power source 2, junction voltage measurement module 3, luminous flux measurement module 4, single-chip microcomputer 5 and photoelectric sensor 6,
Light emitting semiconductor device to be measured places in the integrating sphere 1, and this light emitting semiconductor device is connected between two current output terminals in calibration power source 2, and the signal input end in calibration power source 2 connects the control signal output ends of single-chip microcomputer 5,
The negative electrode of light emitting semiconductor device to be measured and anode be two voltage signal input ends of johning knot voltage measurement module 3 respectively, and the voltage signal output end of junction voltage measurement module 3 connects the voltage signal input end of single-chip microcomputer 5,
In this embodiment; Junction voltage measurement module 3 is used to measure light emitting semiconductor device PN junction to be measured pressure drop; And this PN junction pressure drop exported to single-chip microcomputer 5; Single-chip microcomputer 5 calculates the magnitude of power that obtains light emitting semiconductor device to be measured according to the PN junction pressure drop that obtains and the steady current in calibration power source 2, and single-chip microcomputer 5 is made ratio with the magnitude of power and the light quantity signal that obtain; Promptly use the numerical value of the numerical value of light quantity signal divided by power signal, the result of acquisition is the luminescence efficiency of light emitting semiconductor device to be measured.
In use, light emitting semiconductor device to be measured is fixed in the integrating sphere 1 through cooling stand, and to guarantee better heat radiating effect, integrating sphere 1 domestic demand is provided with plate washer, is used for preventing that the direct light that light emitting semiconductor device to be measured sends from being absorbed by photoelectric sensor 6.
The course of work: with light emitting semiconductor device to be measured; It is the emitting led integrating sphere 1 of putting into; Supply light emitting semiconductor device to be measured luminous through calibration power source 2 outputting standard electric currents; Junction voltage measurement module 3 is measured the knot pressure drop of light emitting semiconductor device to be measured and is calculated power, and the luminous flux of exporting with photoelectric sensor 6 conversions calculates the acquisition luminescence efficiency, and in secondary instrument, shows.
Embodiment two: below in conjunction with Fig. 1 this embodiment is described, this embodiment is that with the difference of embodiment one it also comprises display unit 7, and the shows signal input end of display unit 7 connects the shows signal output terminal of single-chip microcomputer 5.
Embodiment three: below in conjunction with Fig. 1 this embodiment is described, this embodiment is for to the further specifying of embodiment one or two, and it also comprises keyboard 8, and the preset signal output terminal of keyboard 8 connects the preset signal input end of single-chip microcomputer 5.
In the utility model, the luminous flux measurement scope of photoelectric sensor 6 is: 0.001lm~2000lm, and its accuracy of measurement is superior to ± and 5%; The forward current output area in calibration power source 2 is: 0.05mA~2000mA, and its output current accuracy is ± 0.01%; The scope that junction voltage measurement module 3 is measured forward voltage is: 0.01V~20.0V, its accuracy of measurement is ± 0.01%.
Claims (3)
1. the luminescence efficiency detection system of a light emitting semiconductor device, it comprises integrating sphere (1), it is characterized in that: it also comprises calibration power source (2), junction voltage measurement module (3), luminous flux measurement module (4), single-chip microcomputer (5) and photoelectric sensor (6),
Light emitting semiconductor device to be measured places in the integrating sphere (1), and this light emitting semiconductor device is connected between two current output terminals in calibration power source (2), and the signal input end of calibration power source (2) connects the control signal output ends of single-chip microcomputer (5),
The negative electrode of light emitting semiconductor device to be measured and anode be two voltage signal input ends of johning knot voltage measurement module (3) respectively, and the voltage signal output end of junction voltage measurement module (3) connects the voltage signal input end of single-chip microcomputer (5),
Photoelectric sensor (6) is used to receive the light quantity signal of light emitting semiconductor device to be measured; The light quantity signal output terminal of photoelectric sensor (6) connects the light quantity signal input end of luminous flux measurement module (4), and the light quantity signal output terminal of luminous flux measurement module (4) connects the light quantity signal input end of single-chip microcomputer (5).
2. want the luminescence efficiency detection system of 1 described light emitting semiconductor device according to right, it is characterized in that: it also comprises display unit (7), and the shows signal input end of display unit (7) connects the shows signal output terminal of single-chip microcomputer (5).
3. want the luminescence efficiency detection system of 1 or 2 described light emitting semiconductor devices according to right, it is characterized in that: it also comprises keyboard (8), and the preset signal output terminal of keyboard (8) connects the preset signal input end of single-chip microcomputer (5).
Priority Applications (1)
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CN201120522917XU CN202339395U (en) | 2011-12-14 | 2011-12-14 | Luminous efficiency detection system of semiconductor luminous apparatus |
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CN201120522917XU CN202339395U (en) | 2011-12-14 | 2011-12-14 | Luminous efficiency detection system of semiconductor luminous apparatus |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103837327A (en) * | 2012-11-23 | 2014-06-04 | 海洋王(东莞)照明科技有限公司 | Electrodeless fluorescent lamp detection device and method |
CN105910704A (en) * | 2016-04-04 | 2016-08-31 | 徐晓峰 | High precision spectrum radiation scaling integrating sphere system and control method |
CN106441811A (en) * | 2016-06-21 | 2017-02-22 | 烟台昕诺吉太阳能技术有限公司 | Device and method for detecting optical transmission efficiency |
CN106872871A (en) * | 2017-04-14 | 2017-06-20 | 杭州博源光电科技有限公司 | A kind of system and method for testing light source photoelectric transformation efficiency |
CN110108451A (en) * | 2019-05-15 | 2019-08-09 | 上海粲高教育设备有限公司 | The detection method and device of fluorescence lamp efficiency and the monitoring method of fluorescent lamp |
-
2011
- 2011-12-14 CN CN201120522917XU patent/CN202339395U/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103837327A (en) * | 2012-11-23 | 2014-06-04 | 海洋王(东莞)照明科技有限公司 | Electrodeless fluorescent lamp detection device and method |
CN105910704A (en) * | 2016-04-04 | 2016-08-31 | 徐晓峰 | High precision spectrum radiation scaling integrating sphere system and control method |
CN106441811A (en) * | 2016-06-21 | 2017-02-22 | 烟台昕诺吉太阳能技术有限公司 | Device and method for detecting optical transmission efficiency |
CN106441811B (en) * | 2016-06-21 | 2024-03-22 | 烟台昕诺吉太阳能技术有限公司 | Device and method for detecting light transmission efficiency |
CN106872871A (en) * | 2017-04-14 | 2017-06-20 | 杭州博源光电科技有限公司 | A kind of system and method for testing light source photoelectric transformation efficiency |
CN110108451A (en) * | 2019-05-15 | 2019-08-09 | 上海粲高教育设备有限公司 | The detection method and device of fluorescence lamp efficiency and the monitoring method of fluorescent lamp |
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Granted publication date: 20120718 Termination date: 20141214 |
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