CN208904029U - The mercury cadmium telluride avalanche diode detector of modulated surface energy band - Google Patents
The mercury cadmium telluride avalanche diode detector of modulated surface energy band Download PDFInfo
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- CN208904029U CN208904029U CN201821335563.6U CN201821335563U CN208904029U CN 208904029 U CN208904029 U CN 208904029U CN 201821335563 U CN201821335563 U CN 201821335563U CN 208904029 U CN208904029 U CN 208904029U
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Abstract
Patent discloses a kind of mercury cadmium telluride avalanche diode detector of modulated surface energy band, it can reach the effect of modulation passivation layer and mercury cadmium telluride interface pn-junction energy band by increasing electrode above pn-junction depletion region passivation layer, passivation layer and mercury cadmium telluride interface pn-junction made to tend to flat rubber belting state to inhibit the tracking currents such as surface generation-compound, surface tunnelling.There is the detector modulated pn-junction area surface energy band it to be made to tend to flat rubber belting state, the advantages of inhibiting tracking current to make diode operation work under reversed big bias with Geiger mode angular position digitizer, the mercury cadmium telluride avalanche diode device of conventional structure is advantageously accounted for when reverse biased is greater than avalanche breakdown voltage, it can be because there are biggish leakage currents on surface, cause photodiode that thermoelectricity breakdown occurs, the problem of carrying out signal detection with linear model can only be met by limiting it.
Description
Technical field
This patent is related to cadmium-telluride-mercury infrared detector technology, and in particular to the design of mercury cadmium telluride avalanche diode detector with
Technology of preparing.
Background technique
Mercury cadmium telluride snowslide diode detector just has been reported early in the 1980s, due to mercury cadmium telluride ionization system itself
Number characteristic makes it that can prepare the avalanche photodide for being bordering on no excess noise, will be in infrared small-signal and m- high-altitude
Between play key effect in resolution detector, be rapidly developed in recent years, it has also become the development of third generation infrared imaging detector
An important directions.The infrared avalanche photodiode detector of mercury cadmium telluride is with its high gain-bandwidth product, high s/n ratio and is suitable for
High speed, weak signal even single photon detection is may be implemented in the advantages that linear work is imaged, in fiber optic communication, three-dimensional laser
Radar is widely used in astronomical observation and Atmospheric Survey etc..
There are two types of the operating modes of mercury cadmium telluride snowslide diode: linear model and Geiger mode angular position digitizer.The second level under linear model
Pipe output electric current is directly proportional to the number of photons of irradiation on it, and gain is unrelated with the photoelectron number of injection, and it is 10 that gain, which is less about,2
~103Magnitude, the diode of mercury cadmium telluride snowslide at this time can be integrated into infrared focal plane detector realization to the photoelectronic imaging of weak signal.
Under Geiger mode angular position digitizer, reverse biased added by mercury cadmium telluride snowslide diode is greater than avalanche breakdown voltage, exports electric current not with incidence
Number of photons variation, gain is very high, up to 106Magnitude can be realized single photon detection, can be used for speed fiber optic communication systems, with
And the Detection Techniques of the active/passive Double-mode imaging of 3D.
The mercury cadmium telluride avalanche diode detector (Fig. 2) of conventional structure, it is usually blunt due to the influence of passivation layer fixed charge
The interface pn-junction for changing layer and mercury cadmium telluride is not at flat rubber belting state, and exhausting easily occurs in device surface, accumulates and transoid, and shows as
Band curvature, and then a series of dark current relevant to surface are generated, as shown in Figure 3.Also, the leakage current on pn-junction area surface is remote
It is mercury cadmium telluride avalanche diode snowslide device much larger than the generation-recombination current, dissufion current, tunnelling current of space charge region
The main ingredient of part dark current.Then, the infrared diode avalanche device of this conventional structure is greater than snowslide in reverse biased
When breakdown voltage, it can cause photodiode that thermoelectricity breakdown occurs because there are biggish leakage currents on surface.Which has limited it can only
Meet the signal detection amplified with linear model.To realize the high avalanche gain factor, it is necessary to by reducing avalanche diode
Dark current could realize the detection of small-signal, even single photon with Geiger mode angular position digitizer.
Summary of the invention
The purpose of this patent is to solve the mercury cadmium telluride avalanche diode device of conventional structure in reverse biased and be greater than snow
When collapsing breakdown voltage, it can cause photodiode that thermoelectricity breakdown occurs, limiting it can only expire because there are biggish leakage currents on surface
It is enough the problem of linear model carries out signal detection, a kind of modulated pn-junction area surface energy band of proposition makes it tend to flat ribbon
State, the detector for inhibiting tracking current to make diode operation work under reversed big bias with Geiger mode angular position digitizer.
Overall structure description: such as Fig. 1, this chip includes the area mercury cadmium telluride p 1, the low-doped n of mercury cadmium telluride-Area 2, mercury cadmium telluride is highly doped
Miscellaneous n+Area 3, passivation layer 4, the photosensitive first area electrode 5 of pn-junction, the area p public electrode 6 and surface energy band modulator electrode 7；In the area mercury cadmium telluride p
The highly doped n of mercury cadmium telluride is formed by conventional doping on 1+Area 3 and the low-doped n of mercury cadmium telluride-Area 2；Passivation layer 4 is covered on mercury cadmium telluride,
Aperture makes the highly doped n of mercury cadmium telluride respectively on the passivation layer 4 above the photosensitive first area 5 of pn-junction and the area mercury cadmium telluride p 1+Area 3 and pn-junction light
The area Min Yuan electrode 5 is connected, and the area mercury cadmium telluride p 1 is connected with the area p public electrode 6；Surface energy band modulator electrode is prepared on passivation layer 4
7, the position low-doped n of mercury cadmium telluride in vertical direction-Area 2 and the area mercury cadmium telluride p 1 are formed by passivation layer on pn-junction depletion region
On 4；
Further design feature description: 1 concentration of the area mercury cadmium telluride p is 8 × 1015cm-3, the low-doped n of mercury cadmium telluride-2 concentration of area is 1
×1015cm-3, longitudinal highly doped n of mercury cadmium telluride+The low-doped n of mercury cadmium telluride under area 3-Area 2 is with a thickness of 3 μm, the highly doped n of mercury cadmium telluride+Area
3 concentration are 1 × 1017cm-3, with a thickness of 1 μm.Passivation layer 4 is made of cadmium telluride and zinc sulphide, first covers cadmium telluride, then cover sulphur
Change zinc.Cadmium telluride thickness is between 100nm to 200nm, and zinc sulphide thickness is between 0nm to 200nm；The photosensitive first area electrode of pn-junction
5, p area's public electrodes 6 and surface energy band modulator electrode 7 first cover tin by tin and Jin Zucheng, then cover gold.Tin thickness is in 20nm
To between 40nm, Jin Houdu is between 60nm to 120nm.
Working principle: it is made by the band structure in 7 interface flexible modulation mercury cadmium telluride surface p n of surface energy band modulator electrode
Tend to flat rubber belting, inhibits the effect of the tracking currents such as surface generation-compound, surface tunnelling, avalanche diode can be effectively reduced
Dark current and carrier surface channel effect bring influence, and then improve the breakdown reverse voltage of avalanche diode and occurring
The electric field strength in interface, greatly increases the avalanche gain factor to make diode operation anti-under the preceding reversed big bias of thermoelectricity breakdown
It is worked under to big bias with Geiger mode angular position digitizer.
This patent is greater than avalanche breakdown in reverse biased the utility model has the advantages that solving conventional structure mercury cadmium telluride avalanche diode device
When voltage, it can cause photodiode that thermoelectricity breakdown occurs, limiting it can only meet with line because there are biggish leakage currents on surface
Sexual norm carries out the problem of signal detection, and modulation pn-junction area surface energy band makes it tend to flat rubber belting state, inhibit tracking current from
And diode operation is made to work under reversed big bias with Geiger mode angular position digitizer.
Detailed description of the invention
Fig. 1 is the mercury cadmium telluride avalanche diode detector schematic diagram with modulated surface energy band, wherein 1 is mercury cadmium telluride p
Area, 2 be the low-doped n of mercury cadmium telluride-Area, 3 be the highly doped n of mercury cadmium telluride+Area, 4 be passivation layer, and 5 be the photosensitive first area electrode of pn-junction, and 6 be p
Area's public electrode, 7 be surface energy band modulator electrode.
Fig. 2 is conventional structure mercury cadmium telluride avalanche diode detector schematic diagram, wherein 1 is the area mercury cadmium telluride p, 2 be mercury cadmium telluride
Low-doped n-Area, 3 be the highly doped n of mercury cadmium telluride+Area, 4 be passivation layer, and 5 be the photosensitive first area electrode of pn-junction, and 6 be the area p public electrode.
Fig. 3 is mercury cadmium telluride n+-n-The relational graph of dark current and p-type surface gesture caused by-p avalanche diode surface.
Specific embodiment
Embodiment 1
1) n is formed by conventional doping on p-type mercury cadmium telluride+-n-- p structure, mercury cadmium telluride p area's concentration are 8 × 1015cm-3,
n-Area's concentration is 1 × 1015cm-3, longitudinal n+N under area-Area is with a thickness of 3 μm, n+Area's concentration is 1 × 1017cm-3, with a thickness of 1 μm；
2) 100nm cadmium telluride passivation layer is first grown on mercury cadmium telluride surface；
3) cadmium telluride corrosive liquid corrosion and passivation layer is used, the photosensitive first area passivation hole of pn-junction and the area p public electrode passivation hole are outputed；
4) tin of 20nm, the gold of regrowth 60nm are grown above passivation hole and pn-junction depletion region passivation layer.
Embodiment 2
1) n is formed by conventional doping on p-type mercury cadmium telluride+-n-- p structure, mercury cadmium telluride p area's concentration are 8 × 1015cm-3,
n-Area's concentration is 1 × 1015cm-3, longitudinal n+N under area-Area is with a thickness of 3 μm, n+Area's concentration is 1 × 1017cm-3, with a thickness of 1 μm；
2) 150nm cadmium telluride passivation layer, the zinc sulphide of regrowth 100nm are first grown on mercury cadmium telluride surface；
3) hcl corrosion zinc sulphide is used, cadmium telluride corrosive liquid corrosion and passivation layer outputs the photosensitive first area passivation hole of pn-junction and the area p
Public electrode is passivated hole；
4) tin of 30nm, the gold of regrowth 100nm are grown above passivation hole and pn-junction depletion region passivation layer.
Embodiment 3
1) n is formed by conventional doping on p-type mercury cadmium telluride+-n-- p structure, mercury cadmium telluride p area's concentration are 8 × 1015cm-3,
n-Area's concentration is 1 × 1015cm-3, longitudinal n+N under area-Area is with a thickness of 3 μm, n+Area's concentration is 1 × 1017cm-3, with a thickness of 1 μm；
2) 200nm cadmium telluride passivation layer, the zinc sulphide of regrowth 200nm are first grown on mercury cadmium telluride surface；
3) hcl corrosion zinc sulphide is used, cadmium telluride corrosive liquid corrosion and passivation layer outputs the photosensitive first area passivation hole of pn-junction and the area p
Public electrode is passivated hole；
4) tin of 40nm, the gold of regrowth 120nm are grown above passivation hole and pn-junction depletion region passivation layer.
Claims (3)
1. a kind of mercury cadmium telluride avalanche diode detector of modulated surface energy band, including the area mercury cadmium telluride p (1), mercury cadmium telluride low-mix
Miscellaneous n-Area (2), the highly doped n of mercury cadmium telluride+Area (3), passivation layer (4), the photosensitive first area's electrode (5) of pn-junction, the area p public electrode (6) and table
Face energy band modulator electrode (7), it is characterised in that:
The highly doped n of mercury cadmium telluride is formed by conventional doping in the area mercury cadmium telluride p (1)+Area (3) and the low-doped n of mercury cadmium telluride-Area (2)；
Passivation layer (4) are covered on mercury cadmium telluride, on the passivation layer (4) above the photosensitive first area's electrode (5) of pn-junction and the area mercury cadmium telluride p (1)
Aperture makes the highly doped n of mercury cadmium telluride respectively+Area (3) is connected with the photosensitive first area's electrode (5) of pn-junction, and the area mercury cadmium telluride p (1) and the area p are public
Electrode (6) is connected；Surface energy band modulator electrode (7) are prepared on passivation layer (4), the mercury cadmium telluride of position in vertical direction is low
Adulterate n-Area (2) and the area mercury cadmium telluride p (1) are formed by pn-junction depletion region on passivation layer (4)；
The highly doped n of longitudinal mercury cadmium telluride+The low-doped n of mercury cadmium telluride under area (3)-With a thickness of 3 μm, mercury cadmium telluride is highly doped in area (2)
n+Area (3) is with a thickness of 1 μm.
2. a kind of mercury cadmium telluride avalanche diode detector of modulated surface energy band according to claim 1, feature exist
In: the passivation layer (4) is made of cadmium telluride and zinc sulphide, first covers cadmium telluride in the area mercury cadmium telluride p (1), then cover vulcanization
Zinc, cadmium telluride thickness is between 100nm to 200nm, and zinc sulphide thickness is between 0nm to 200nm.
3. a kind of mercury cadmium telluride avalanche diode detector of modulated surface energy band according to claim 1, feature exist
In: the photosensitive first area's electrode (5) of the pn-junction, the area p public electrode (6) and surface energy band modulator electrode (7) are by tin and golden group
At first covering tin, then cover gold, tin thickness is between 20nm to 40nm, and Jin Houdu is between 60nm to 120nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110660878A (en) * | 2019-09-26 | 2020-01-07 | 中国电子科技集团公司第十一研究所 | Planar mercury cadmium telluride avalanche diode detector and preparation method thereof |
| CN110911520A (en) * | 2019-11-13 | 2020-03-24 | 中国电子科技集团公司第十一研究所 | Tellurium-cadmium-mercury infrared detector hybrid chip and preparation method thereof |
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2018
- 2018-08-20 CN CN201821335563.6U patent/CN208904029U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110660878A (en) * | 2019-09-26 | 2020-01-07 | 中国电子科技集团公司第十一研究所 | Planar mercury cadmium telluride avalanche diode detector and preparation method thereof |
| CN110911520A (en) * | 2019-11-13 | 2020-03-24 | 中国电子科技集团公司第十一研究所 | Tellurium-cadmium-mercury infrared detector hybrid chip and preparation method thereof |
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