CN110660878B - Planar mercury cadmium telluride avalanche diode detector and preparation method thereof - Google Patents
Planar mercury cadmium telluride avalanche diode detector and preparation method thereof Download PDFInfo
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- CN110660878B CN110660878B CN201910919549.3A CN201910919549A CN110660878B CN 110660878 B CN110660878 B CN 110660878B CN 201910919549 A CN201910919549 A CN 201910919549A CN 110660878 B CN110660878 B CN 110660878B
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- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 title claims abstract description 83
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 238000002161 passivation Methods 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 21
- 229910052737 gold Inorganic materials 0.000 claims description 21
- 239000010931 gold Substances 0.000 claims description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 16
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 13
- 229910052804 chromium Inorganic materials 0.000 claims description 13
- 239000011651 chromium Substances 0.000 claims description 13
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 12
- 239000005083 Zinc sulfide Substances 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 8
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 11
- 230000015556 catabolic process Effects 0.000 abstract description 9
- 230000005641 tunneling Effects 0.000 abstract description 7
- 238000001312 dry etching Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
The invention provides a planar HgCdTe avalanche diode detector and a preparation method thereof, which are used for reducing planar HgCdTe avalanche twoThe electric field intensity in the depletion regions of the cylindrical junction and the spherical junction of the diode detector further reduces the corresponding tunneling current, improves the avalanche breakdown voltage and improves the gain in a linear mode. The method comprises the following steps: depositing a passivation layer on the mercury cadmium telluride surface; carrying out P-type doping on mercury cadmium telluride through conventional doping; n-type doping is carried out on the P-type tellurium-cadmium-mercury material by conventional doping to form N+Center region, highly doped N+Guard ring and low doped N‑A zone; creating a highly doped N located through the passivation layer+A contact hole for the photosensitive element electrode and a contact hole for the common electrode in the central region and the HgCdTe P-type doped region; and forming a photosensitive element electrode and a common electrode in the electrode contact hole.
Description
Technical Field
The invention relates to the technical field of infrared detectors, in particular to a planar mercury cadmium telluride avalanche diode detector and a preparation method thereof.
Background
The HgCdTe avalanche diode detector can work in Geiger mode and linear mode separately based on different work bias voltages. In a Geiger mode, the work bias voltage of the HgCdTe avalanche diode detector is higher than the avalanche breakdown voltage, the amplitude of an output signal is irrelevant to the amplitude of a received photoelectric signal, and the next signal detection can be carried out only after the detector is quenched by an external circuit; under the linear mode, the work bias of the HgCdTe avalanche diode detector is lower than the avalanche breakdown voltage, the gain of the HgCdTe avalanche diode detector changes along with the bias voltage, and the received photoelectric signal can be amplified and output continuously and proportionally at high speed without an external quenching circuit.
The mercury cadmium telluride avalanche diode detector belongs to the third generation infrared detector technology, and the mercury cadmium telluride material has the characteristic of single carrier excited avalanche in a specific component interval, so that the avalanche amplification with the characteristic of nearly no excess noise can be realized. The tellurium-cadmium-mercury avalanche photodiode has the characteristics of high sensitivity, high gain bandwidth product, high signal-to-noise ratio and the like, can continuously work at high speed without blind time in a linear mode, and has wide application prospects in the fields of optical fiber communication, space communication, three-dimensional laser radars, astronomical observation, atmospheric detection and the like.
The mercury cadmium telluride avalanche diode detector usually adopts a PIN structure, and specific implementation modes include a plane type, a mesa type and an annular ring type. When the HgCdTe avalanche diode detector works, the applied bias voltage mainly falls in the depletion region of the PN junction. The actually formed PN junction of the conventional planar HgCdTe avalanche diode detector is greatly different from the ideal situation, as shown in FIG. 1, wherein 11 is a HgCdTe P-type doped region, 12 is a HgCdTe low-doped N-region, 13 is a HgCdTe high-doped N + region, 14 is a HgCdTe surface passivation film layer, 15 is a detection photosensitive element electrode, and 16 is a common electrode. The actual PN junction can be divided into a transverse cylindrical junction, a longitudinal plane junction and a spherical junction at a corner, the curvature radius of the cylindrical junction and the spherical junction is smaller than that of the plane junction, so that the electric field at the cylindrical junction and the spherical junction is seriously concentrated, the tunneling current related to the electric field at the cylindrical junction and the spherical junction is far higher than that at the plane junction, the avalanche breakdown voltage at the cylindrical junction and the spherical junction is lower than that at the plane junction, and the effective working bias range and the corresponding gain range of the mercury cadmium telluride avalanche diode detector in a linear mode are limited.
Disclosure of Invention
The invention aims to solve the technical problem of reducing the electric field intensity in the cylindrical junction and spherical junction depletion regions of a planar mercury cadmium telluride diode detector, further reducing the corresponding tunneling current, improving the avalanche breakdown voltage and improving the gain in a linear mode, and provides the planar mercury cadmium telluride diode detector and a preparation method thereof.
The invention adopts the technical scheme that the preparation method of the planar HgCdTe avalanche diode detector comprises the following steps:
depositing a passivation layer on the mercury cadmium telluride surface;
carrying out P-type doping on mercury cadmium telluride through conventional doping;
n-type doping is carried out on the P-type tellurium-cadmium-mercury material by conventional doping to form N+Center region, highly doped N+Guard ring and low doped N-A zone;
generating a photosensitive element electrode contact hole and a common electrode contact hole which penetrate through the passivation layer and are positioned in the highly doped N + central region and the mercury cadmium telluride P-type doped region;
and forming a photosensitive element electrode and a common electrode in the electrode contact hole.
In one possible embodiment, the highly doped N+The guard ring is formed of at least one guard ring.
In one possible embodiment, the highly doped N+The guard ring is composed of 1-4 layers of guard rings.
In one possible embodiment, two adjacent layers are highly doped with N+The distance between the guard rings is 2-8 μm.
In one possible embodiment, the innermost layer is highly doped with N+The distance between the guard ring and the tellurium-cadmium-mercury highly-doped N + central area is 2-8 mu m.
In one possible implementation, depositing a passivation layer on the mercury cadmium telluride surface specifically includes:
depositing a cadmium telluride passivation layer on the mercury cadmium telluride surface; or
Cadmium telluride and zinc sulfide are sequentially deposited on the mercury cadmium telluride surface to form a passivation layer.
In one possible embodiment, the cadmium telluride has a thickness of 30-500 nm, and the zinc sulfide has a thickness of 0-500 nm.
In one possible implementation mode, the forming of the light sensitive element electrode and the common electrode in the electrode contact hole specifically includes:
sequentially growing a chromium layer and a first gold layer in the electrode contact hole to form a photosensitive element electrode and a common electrode; or
And sequentially growing a chromium layer, a first gold layer, a platinum layer and a second gold layer in the electrode contact hole to form a photosensitive element electrode and a common electrode.
In a possible embodiment, the thickness of the chromium layer is 10 to 200nm, the thickness of the first gold layer is 50 to 500nm, the thickness of the platinum layer is 0 to 500nm, and the thickness of the gold layer is 0 to 300 nm.
The invention also provides a planar mercury cadmium telluride avalanche diode detector which is prepared by any one of the methods.
By adopting the technical scheme, the invention at least has the following advantages:
the planar mercury cadmium telluride avalanche diode detector and the preparation method thereof form the highly doped N + protection ring on the P-type mercury cadmium telluride material, when a reverse bias voltage is loaded on a PN junction, a depletion region of a central PN formed by a highly doped N + central region expands outwards along with the increase of the reverse bias voltage, when the depletion region contacts the protection ring, the depletion region of the central PN junction and the depletion region of the protection ring PN are penetrated, the width of the depletion region is increased, an electric field of the central PN junction extends outwards, the electric field intensity at a cylindrical junction and a spherical junction is reduced, the corresponding tunneling current is reduced, the avalanche breakdown voltage is improved, and the mercury cadmium telluride diode detector can work under higher bias voltage in a linear mode to obtain higher gain.
Drawings
FIG. 1 is a schematic diagram of a planar HgCdTe avalanche diode detector;
FIG. 2 is a flow chart of a method for manufacturing a planar HgCdTe avalanche diode detector according to an embodiment of the invention;
FIG. 3 is a schematic structural diagram of a planar HgCdTe avalanche diode detector according to an embodiment of the invention.
Detailed Description
To further explain the technical means and effects of the present invention adopted to achieve the intended purpose, the present invention will be described in detail with reference to the accompanying drawings and preferred embodiments.
It should be noted that the terms "first", "second", and the like in the description and the claims of the embodiments of the present invention and in the drawings described above are used for distinguishing similar objects and not necessarily for describing a particular order or sequence. It will be appreciated that the data so used may be interchanged under appropriate circumstances such that the embodiments described herein may be practiced otherwise than as specifically illustrated or described herein.
Reference herein to "a plurality or a number" means two or more. "and/or" describes the association relationship of the associated objects, meaning that there may be three relationships, e.g., a and/or B, which may mean: a exists alone, A and B exist simultaneously, and B exists alone. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship.
The curvature radius of a cylindrical junction and a spherical junction of a conventional planar mercury cadmium telluride diode detector is smaller than that of the planar junction, so that electric fields at the cylindrical junction and the spherical junction are seriously concentrated, the tunneling current related to the electric fields at the cylindrical junction and the spherical junction is far higher than that at the planar junction, the avalanche breakdown voltage at the cylindrical junction and the spherical junction is lower than that at the planar junction, and finally the problem that the gain in a linear mode is difficult to improve is caused.
In view of this, the embodiments of the present invention provide a method for increasing depletion widths of a cylindrical junction and a spherical junction through a protection ring structure, so as to reduce electric field intensities in depletion regions of the cylindrical junction and the spherical junction, thereby reducing corresponding tunneling leakage, increasing avalanche breakdown voltage, and finally increasing gain in a linear mode.
As shown in fig. 2, which is a schematic flow chart of an implementation of a method for manufacturing a planar mercury cadmium telluride avalanche diode detector provided by an embodiment of the present invention, the method includes the following steps:
and S21, depositing a passivation layer on the mercury cadmium telluride surface.
In specific implementation, a cadmium telluride passivation layer is deposited on the surface of mercury cadmium telluride; or cadmium telluride and zinc sulfide are deposited on the mercury cadmium telluride surface in sequence to form a passivation layer.
Wherein the thickness of the cadmium telluride layer can be 30-500 nm, and the thickness of the zinc sulfide layer can be 0-500 nm.
And S22, carrying out P-type doping on mercury cadmium telluride through conventional doping.
Wherein, the concentration of the tellurium-cadmium-mercury P-type doped region can be as follows: 5e15cm-3～5e16cm-3。
S23, carrying out N-type doping on the P-type tellurium-cadmium-mercury material by conventional doping to form N+Center region, highly doped N+Guard ring and low doped N-And (4) a zone.
Detailed description of the inventionMiddle, tellurium cadmium mercury low doped N-The zone concentration may be 1e14cm-3～1e15cm-3High doping of mercury cadmium telluride with N+The central region concentration may be 1e17cm-3～3e18cm-3High doping of mercury cadmium telluride with N+Guard ring concentration may be 1e17cm-3～3e18cm-3。
In one embodiment, the highly doped N + guard ring is comprised of at least one guard ring, and preferably the highly doped N + guard ring is comprised of 1-4 guard rings. The distance between two adjacent layers of highly doped N + guard rings is 2-8 mu m, and the distance between the innermost layer of highly doped N + guard ring and the tellurium-cadmium-mercury highly doped N + central area is 2-8 mu m.
And S24, generating a photosensitive element electrode contact hole and a common electrode contact hole which penetrate through the passivation layer and are positioned in the highly doped N + central region and the mercury cadmium telluride P-type doped region.
In specific implementation, a dry etching device can be used for etching the passivation layer to generate a photosensitive element electrode contact hole and a common electrode contact hole which penetrate through the passivation layer and are positioned in the highly doped N + central region and the mercury cadmium telluride P-type doped region.
And S25, forming a photosensitive element electrode and a common electrode in the electrode contact hole.
In a specific implementation, step S25 may be implemented in any of the following manners:
in the first mode, a chromium layer and a first gold layer are sequentially grown in an electrode contact hole to form a photosensitive element electrode and a common electrode.
In this embodiment, the thickness of the chromium layer may be 10 to 200nm, and the thickness of the first gold layer may be 50 to 500 nm.
And secondly, growing a chromium layer, a first gold layer, a platinum layer and a second gold layer in the electrode contact hole in sequence to form the photosensitive element electrode and the common electrode.
In this embodiment, the thickness of the chromium layer may be 10 to 200nm, the thickness of the first gold layer may be 50 to 500nm, the thickness of the platinum layer may be 0 to 500nm, and the thickness of the gold layer may be 0 to 300 nm.
FIG. 3 is a schematic structural diagram of a planar HgCdTe avalanche diode detector provided in an embodiment of the present invention, includingHgCdTe P-type doped region 31, HgCdTe low doped N-Region 32 of HgCdTe heavily doped N+A central region 33, a mercury cadmium telluride surface passivation film layer 34, a photosensitive element electrode 35, a common electrode 36, mercury cadmium telluride highly doped N+Guard ring 37.
In specific implementation, a surface passivation layer 34 is deposited on the surface of the HgCdTe material, the HgCdTe material is doped conventionally to form a HgCdTe P-type doped region 31, and a HgCdTe highly-doped N is formed on the HgCdTe P-type doped region 31 by a conventional doping method+Central region 33 of HgCdTe high doping N+Guard ring 37 and mercury cadmium telluride low doped N-Region 32 at a high doping of N+Central region 33 and low tellurium-cadmium-mercury doping of N-Photosensitive element electrode contact holes and common electrode contact holes penetrating through the surface passivation film layer 34 are formed in the surface passivation film layer 34 on the tellurium-cadmium-mercury P-type doped region 31 outside the region 32, and photosensitive element electrodes 35 and common electrodes 36 are deposited at the positions of the electrode contact holes.
In order to better understand the present invention, the following description will be made with reference to specific examples to illustrate the implementation process of the method for manufacturing the planar mercury cadmium telluride avalanche diode detector.
In one embodiment, the preparation method of the planar mercury cadmium telluride avalanche diode detector can be implemented according to the following steps:
step 1, depositing a 30nm cadmium telluride passivation layer on the mercury cadmium telluride surface;
step 2, carrying out P-type doping on mercury cadmium telluride through conventional doping, wherein the doping concentration is 5e15cm-3；
Step 3, carrying out N-type doping on the P-type tellurium-cadmium-mercury material by conventional doping to form highly doped N+Center, 1 layer highly doped N+Guard ring and low doped N-Region, highly doped N+The doping concentration of the central region is 1e17cm-3The width of the highly doped N + guard ring is 1 μm, and the doping concentration is 1e17cm-3High doping of N+Guard ring pitch highly doped N+Distance of central area 2 μm, low doped N-The doping concentration of the region is 1e14cm-3；
Step 4, etching the passivation layer by using dry etching equipment to generateIs formed in highly doped N+A contact hole for the photosensitive element electrode and a contact hole for the common electrode in the central region and the HgCdTe P-type doped region;
and 5, sequentially growing 10nm of chromium and 50nm of gold at the position of the electrode contact hole to form a photosensitive element electrode and a common electrode.
In another embodiment, the method for preparing the planar mercury cadmium telluride avalanche diode detector provided by the embodiment of the invention can be implemented according to the following steps:
step 1, depositing 250nm cadmium telluride and 250nm zinc sulfide passivation layers on the mercury cadmium telluride surface in sequence;
step 2, carrying out P-type doping on mercury cadmium telluride through conventional doping, wherein the doping concentration is 3e16cm-3；
Step 3, carrying out N-type doping on the P-type tellurium-cadmium-mercury material by conventional doping to form highly doped N+Center, 2 layers of highly doped N+Guard ring and low doped N-Region, highly doped N+The doping concentration of the central region is 1e18cm-3High doping of N+Guard rings having a width of 2 μm and a doping concentration of 1e18cm-3High doping of N+Guard ring pitch highly doped N+The distance between the central area is 5 μm, the space between two adjacent layers of guard rings is 5 μm, and low-doped N-The doping concentration of the region is 5e14cm-3；
Step 4, etching the passivation layer by using dry etching equipment to generate the high-doped N+A contact hole for the photosensitive element electrode and a contact hole for the common electrode in the central region and the HgCdTe P-type doped region;
and 5, sequentially growing 100nm of chromium, 250nm of gold, 250nm of platinum and 150nm of gold at the position of the electrode contact hole to form a photosensitive element electrode and a common electrode.
In another embodiment, the method for manufacturing the planar mercury cadmium telluride avalanche diode detector provided by the embodiment of the invention can be implemented according to the following steps:
step 1, depositing a 500nm cadmium telluride and a 500nm zinc sulfide passivation layer on the mercury cadmium telluride surface in sequence;
step 2, carrying out P-type doping on mercury cadmium telluride through conventional doping, wherein the doping concentration is 5e16cm-3；
Step 3, carrying out N-type doping on the P-type tellurium-cadmium-mercury material by conventional doping to form highly doped N+Center region, 4 layers of highly doped N+Guard ring and low doped N-Region, highly doped N+The doping concentration of the central region is 3e18cm-3High doping of N+Guard rings having a width of 4 μm and a doping concentration of 3e18cm-3High doping of N+Guard ring pitch highly doped N+The distance between the central area is 8 μm, the space between two adjacent layers of guard rings is 8 μm, and low-doped N-The doping concentration of the region is 1e15cm-3；
Step 4, etching the passivation layer by using dry etching equipment to generate the high-doped N+A contact hole for the photosensitive element electrode and a contact hole for the common electrode in the central region and the HgCdTe P-type doped region;
and 5, sequentially growing 200nm of chromium, 500nm of gold, 500nm of platinum and 300nm of gold at the position of the electrode contact hole to form a photosensitive element electrode and a common electrode.
The planar HgCdTe avalanche diode detector provided by the embodiment of the invention has the advantages that when reverse bias voltage is loaded on the PN junction, the high-doping N is added+The depletion region of the central PN formed in the central area expands outwards along with the increase of the reverse bias voltage, when the depletion region contacts the protection ring, the depletion region of the central PN junction is penetrated through with the depletion region of the protection ring PN, the width of the depletion region is increased, the electric field of the central PN junction extends outwards, the electric field intensity at the cylindrical junction and the spherical junction is reduced, the corresponding tunneling current is further reduced, the avalanche breakdown voltage is improved, and the tellurium-cadmium-mercury avalanche diode detector can work under higher bias voltage in a linear mode to obtain higher gain.
While the invention has been described in connection with specific embodiments thereof, it is to be understood that it is intended by the appended drawings and description that the invention may be embodied in other specific forms without departing from the spirit or scope of the invention.
Claims (10)
1. A method for preparing a planar HgCdTe avalanche diode detector is characterized by comprising the following steps:
depositing a passivation layer on the mercury cadmium telluride surface;
carrying out P-type doping on mercury cadmium telluride through conventional doping;
n-type doping is carried out on the P-type tellurium-cadmium-mercury material by conventional doping to form N+Center region, highly doped N+Guard ring and low doped N-Region of said N+A central region and the highly doped N+Guard rings are all positioned on the low-doped N-In the region, and the highly doped N+A protective ring is sleeved on the N+A central region;
the highly doped N+Guard ring and the N+The central areas are arranged at intervals;
generating a photosensitive element electrode contact hole and a common electrode contact hole which penetrate through the passivation layer and are positioned in the highly doped N + central region and the mercury cadmium telluride P-type doped region;
and forming a photosensitive element electrode and a common electrode in the electrode contact hole.
2. The method of claim 1, wherein the high doping of N is performed+The guard ring is formed of at least one guard ring.
3. The method of claim 2, wherein the high doping of N is performed+The guard ring is composed of 1-4 layers of guard rings.
4. Method according to claim 2 or 3, characterized in that two adjacent layers are highly doped N+The distance between the guard rings is 2-8 μm.
5. A method according to claim 2 or 3, characterized in that the innermost layer is highly doped with N+The distance between the guard ring and the tellurium-cadmium-mercury highly-doped N + central area is 2-8 mu m.
6. The method as claimed in claim 1, wherein depositing a passivation layer on the mercury cadmium telluride surface specifically comprises:
depositing a cadmium telluride passivation layer on the mercury cadmium telluride surface; or
Cadmium telluride and zinc sulfide are sequentially deposited on the mercury cadmium telluride surface to form a passivation layer.
7. The method of claim 6, wherein the cadmium telluride is from 30 to 500nm thick and the zinc sulfide is from 0 to 500nm thick.
8. The method of claim 1, wherein forming the photosensor electrode and the common electrode in the electrode contact hole comprises:
sequentially growing a chromium layer and a first gold layer in the electrode contact hole to form a photosensitive element electrode and a common electrode; or
And sequentially growing a chromium layer, a first gold layer, a platinum layer and a second gold layer in the electrode contact hole to form a photosensitive element electrode and a common electrode.
9. The method of claim 8, wherein the thickness of the chromium layer is 10-200 nm, the thickness of the first gold layer is 50-500 nm, the thickness of the platinum layer is 0-500 nm, and the thickness of the gold layer is 0-300 nm.
10. A planar HgCdTe avalanche diode detector, characterized in that, the planar HgCdTe avalanche diode detector is prepared by any one of the methods of claims 1-9.
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| CN115172508A (en) * | 2022-07-19 | 2022-10-11 | 中国科学院上海技术物理研究所 | Breakdown-resistant planar avalanche single photon detector and preparation method thereof |
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| FR2598558B1 (en) * | 1986-05-07 | 1988-11-10 | Telecommunications Sa | HGCDTE AVALANCHE PHOTODIODE SENSITIVE TO WAVELENGTH RADIATION GREATER THAN 2 MM |
| WO2015048304A2 (en) * | 2013-09-25 | 2015-04-02 | Princeton Infrared Technologies, Inc. | LOW NOISE InGaAs PHOTODIODE ARRAY |
| CN106356290A (en) * | 2016-10-28 | 2017-01-25 | 中国电子科技集团公司第四十四研究所 | 1064nm silicon-based avalanche detector and production method thereof |
| CN108039390A (en) * | 2017-11-22 | 2018-05-15 | 天津大学 | Contactless protection ring single-photon avalanche diode and preparation method |
| CN208904029U (en) * | 2018-08-20 | 2019-05-24 | 中国科学院上海技术物理研究所 | The mercury cadmium telluride avalanche diode detector of modulated surface energy band |
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