CN106356290A - 1064nm silicon-based avalanche detector and production method thereof - Google Patents
1064nm silicon-based avalanche detector and production method thereof Download PDFInfo
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- CN106356290A CN106356290A CN201610962410.3A CN201610962410A CN106356290A CN 106356290 A CN106356290 A CN 106356290A CN 201610962410 A CN201610962410 A CN 201610962410A CN 106356290 A CN106356290 A CN 106356290A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 32
- 239000010703 silicon Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims description 38
- 238000005516 engineering process Methods 0.000 claims description 26
- 239000000523 sample Substances 0.000 claims description 24
- -1 boron ion Chemical class 0.000 claims description 20
- 238000002513 implantation Methods 0.000 claims description 20
- 238000002347 injection Methods 0.000 claims description 20
- 239000007924 injection Substances 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 18
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 3
- 229910052698 phosphorus Inorganic materials 0.000 claims 3
- 239000011574 phosphorus Substances 0.000 claims 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a 1064nm silicon-based avalanche detector. The 1064nm silicon-based avalanche detector comprises a substrate layer, a photosensitive region, an avalanche region, protection rings and a cut-off ring. The detector is innovated in that quantity of the protection rings is two, a first protection ring is arranged at the periphery of the photosensitive region, the peripheral side edge of the photosensitive region is arranged at the middle part of the radial direction of the first protection ring, a gap is left between the avalanche region and the first protection ring, a second protection ring is arranged at the periphery of the first protection ring, a gap is left between the second protection ring and the first protection ring, the cut-off ring is arranged at the periphery of the second protection ring, and a gap is left between the cut-off ring and the second protection ring. The detector provided by the invention has the beneficial technical effects that the provided 1064nm silicon-based avalanche detector has better edge breakdown resistant powder and can stably operate for a long time in a high temperature environment.
Description
Technical field
The present invention relates to a kind of avalanche probe, more particularly, to a kind of 1064nm silicon substrate avalanche probe and its making side
Method.
Background technology
Silicon substrate avalanche photodide is a kind of photodetector with internal gain, and it has internal gain function,
Its fast response time, spectral region width, sensitivity and signal to noise ratio s/n are all higher, are widely used to low light level field measurement, photon
The fields such as counting, fiber optic communication, laser ranging.
At present, the silicon substrate avalanche probe species that Japanese shore is loose, the company such as German first sensor, U.S. osi develops
Various, function admirable, is widely used to every field.The producer of domestic development silicon avalanche photodiode is less, crucial skill
Art is grasped not enough, and especially 1064nm silicon substrate avalanche probe has that temperature coefficient of hreakdown voltage is bigger than normal, high temperature breakdown characteristics are steady
Qualitative poor, the shortcomings of noise is big it is impossible to meet engineering demand it is therefore desirable to dependence on import.
Because 1064nm silicon substrate avalanche probe is operated under higher voltage, pn-junction edge due to fringing field effect,
There is higher fringe field, be easily caused 1064nm silicon substrate avalanche probe and puncture in advance in edge, make device stability
Even lost efficacy with less reliable.
Content of the invention
For the problem in background technology, the present invention proposes a kind of 1064nm silicon substrate avalanche probe, described 1064nm
Silicon substrate avalanche probe includes substrate layer, photosensitive area, avalanche region, protection ring and cut-off ring, described photosensitive area, avalanche region, protection
Ring and cut-off ring are both formed on substrate layer；Described protection ring is arranged on photosensitive area periphery, and described cut-off ring is arranged on protection ring
Periphery, described avalanche region be formed in the middle part of photosensitive area it is characterised in that: the quantity of protection ring is two, and the first protection ring sets
Put in photosensitive area periphery, the neighboring of photosensitive area along in the middle part of the radial direction of the first protection ring, avalanche region and the first protection ring it
Between spaced, the second protection ring is arranged on the periphery of the first protection ring, between leaving between the second protection ring and the first protection ring
Every cut-off ring is arranged on the periphery of the second protection ring, spaced between cut-off ring and the second protection ring.
The principle of the present invention is: the agent structure of 1064nm silicon substrate avalanche probe involved in the present invention and ultimate principle
Essentially identical with prior art, its difference is, the protection ring quantity in detector is 2, and two protection rings can effectively press down
The generation of edge breakdown processed is it is ensured that device long-term stable operation in high temperature environments.
Preferably, the radial width of described first protection ring and the second protection ring is 10 μm ~ 20 μm, the first protection ring and
Spacing distance between second protection ring is 6 μm ~ 20 μm.
Implement for the ease of those skilled in the art, the invention also discloses the system of aforementioned 1064nm silicon substrate avalanche probe
Make method it is characterised in that: the step of described manufacture method is:
1) provide silicon substrate, obtain substrate layer；
2) boron ion injection technology is adopted to form cut-off ring in the front of substrate layer；
3) phosphonium ion injection technology and high temperature knot technique is adopted to form the first protection ring and the second protection in the front of substrate layer
Ring；
4) adopt boron ion injection technology in the front formation avalanche region of substrate layer；
5) adopt phosphonium ion injection technology in the front formation photosensitive area of substrate layer；
6) in the front deposit silicon nitride passivating film of substrate layer；
7) by substrate layer thinning back side, metal electrode is made on substrate layer.
In preceding method, specific implementing process is existing maturation process, and its difference is that technological process is different from
Prior art.
Preferably, described substrate layer adopts the p-type High Resistivity Si that resistivity is 2000 ω cm ~ 10000 ω cm.
Preferably, step 2) in the process conditions of phosphonium ion injection technology be: implantation dosage is 1012/cm2~1014/cm2,
Implantation Energy is 60kev ~ 140kev, and doping junction depth is 0.5 μm ~ 1.2 μm.
Preferably, in step 3), the process conditions of phosphonium ion injection technology are: implantation dosage is 1011/cm2~1014/cm2,
Implantation Energy is 60kev ~ 140kev；The process conditions of high temperature knot technique are: knot temperature is 1000 DEG C ~ 1200 DEG C, doping
Junction depth is 2.0 μm ~ 5.0 μm.
Preferably, in step 4), the process conditions of boron ion injection technology are: implantation dosage is 1012/cm2, Implantation Energy
For 800kev ~ 1600kev, the junction depth that adulterates is for 2.0 μm ~ 4.0 μm.
Preferably, in step 5), the process conditions of phosphonium ion injection technology are: implantation dosage is 1014/cm2~1015/cm2,
Energy is 60kev ~ 100kev.
The method have the benefit that: propose a kind of 1064nm silicon substrate avalanche probe and preparation method thereof, should
Detector possesses preferably anti-edge breakdown ability, can long-term stable operation in high temperature environments.
Brief description
Fig. 1, the structural representation of the present invention；
Title corresponding to each labelling of in figure is respectively as follows: silicon nitride passive film 1, silicon dioxide passivating film 2, cut-off ring 3, secondary
Protection ring 4, back side heavily doped layer 5, back metal electrode 6, front metal electrode 7, photosensitive area 8, avalanche region 9, time protection ring
10th, p-type high-resistivity monocrystalline silicon material 11.
Specific embodiment
A kind of 1064nm silicon substrate avalanche probe, described 1064nm silicon substrate avalanche probe includes substrate layer 11, photosensitive area
8th, avalanche region 9, protection ring and cut-off ring 3, described photosensitive area 8, avalanche region 9, protection ring and cut-off ring 3 are both formed in substrate layer 11
On；Described protection ring is arranged on photosensitive area 8 periphery, and described cut-off ring 3 is arranged on the periphery of protection ring, and described avalanche region 9 is formed
In the middle part of photosensitive area 8, its innovation is: the quantity of protection ring is two, and the first protection ring 10 is arranged on photosensitive area 8 periphery, light
The neighboring in quick area 8 is along in the middle part of the radial direction of the first protection ring 10, spaced between avalanche region 9 and the first protection ring 10,
Second protection ring 4 is arranged on the periphery of the first protection ring 10, spaced between the second protection ring 4 and the first protection ring 10, cuts
Only ring 3 is arranged on the periphery of the second protection ring 4, spaced between cut-off ring 3 and the second protection ring 4.
Further, the radial width of described first protection ring 10 and the second protection ring 4 is 10 μm ~ 20 μm, the first guarantor
Spacing distance between retaining ring 10 and the second protection ring 4 is 6 μm ~ 20 μm.
A kind of manufacture method of 1064nm silicon substrate avalanche probe, its innovation is: the step of described manufacture method is:
1) provide silicon substrate, obtain substrate layer 11；
2) boron ion injection technology is adopted to form cut-off ring 3 in the front of substrate layer 11；
3) phosphonium ion injection technology and high temperature knot technique is adopted to form the first protection ring 10 and second in the front of substrate layer 11
Protection ring 4；
4) adopt boron ion injection technology in the front formation avalanche region 9 of substrate layer 11；
5) adopt phosphonium ion injection technology in the front formation photosensitive area 8 of substrate layer 11；
6) in the front deposit silicon nitride passivating film of substrate layer 11；
7) by substrate layer 11 thinning back side, metal electrode is made on substrate layer 11.
Further, described substrate layer 11 adopts the p-type High Resistivity Si that resistivity is 2000 ω cm ~ 10000 ω cm.
Further, step 2) in the process conditions of phosphonium ion injection technology be: implantation dosage is 1012/cm2~1014/
cm2, Implantation Energy is 60kev ~ 140kev, and doping junction depth is 0.5 μm ~ 1.2 μm.
Further, in step 3), the process conditions of phosphonium ion injection technology are: implantation dosage is 1011/cm2~1014/
cm2, Implantation Energy is 60kev ~ 140kev；The process conditions of high temperature knot technique are: knot temperature is 1000 DEG C ~ 1200 DEG C,
Doping junction depth is 2.0 μm ~ 5.0 μm.
Further, in step 4), the process conditions of boron ion injection technology are: implantation dosage is 1012/cm2, inject energy
Measure as 800kev ~ 1600kev, the junction depth that adulterates is 2.0 μm ~ 4.0 μm.
Further, in step 5), the process conditions of phosphonium ion injection technology are: implantation dosage is 1014/cm2~1015/
cm2, energy is 60kev ~ 100kev.
Claims (8)
1. a kind of 1064nm silicon substrate avalanche probe, described 1064nm silicon substrate avalanche probe includes substrate layer (11), photosensitive area
(8), avalanche region (9), protection ring and cut-off ring (3), described photosensitive area (8), avalanche region (9), protection ring and cut-off ring (3) all shapes
Become on substrate layer (11)；Described protection ring is arranged on photosensitive area (8) periphery, and described cut-off ring (3) is arranged on the outer of protection ring
Enclose, described avalanche region (9) be formed in the middle part of photosensitive area (8) it is characterised in that: the quantity of protection ring is two, the first protection ring
(10) be arranged on photosensitive area (8) periphery, the neighboring of photosensitive area (8) along in the middle part of the radial direction of the first protection ring (10), snowslide
Spaced between area (9) and the first protection ring (10), the second protection ring (4) is arranged on the periphery of the first protection ring (10), the
Spaced between two protection rings (4) and the first protection ring (10), cut-off ring (3) is arranged on the periphery of the second protection ring (4), cuts
Only spaced between ring (3) and the second protection ring (4).
2. 1064nm silicon substrate avalanche probe according to claim 1 it is characterised in that: described first protection ring (10) and
The radial width of the second protection ring (4) is 10 μm ~ 20 μm, the interval between the first protection ring (10) and the second protection ring (4)
Distance is 6 μm ~ 20 μm.
3. a kind of manufacture method of 1064nm silicon substrate avalanche probe it is characterised in that: the step of described manufacture method is:
1) provide silicon substrate, obtain substrate layer (11)；
2) boron ion injection technology is adopted to form cut-off ring (3) in the front of substrate layer (11)；
3) adopt phosphonium ion injection technology and high temperature knot technique the front of substrate layer (11) formed the first protection ring (10) and
Second protection ring (4)；
4) adopt boron ion injection technology in the front formation avalanche region (9) of substrate layer (11)；
5) adopt phosphonium ion injection technology in the front formation photosensitive area (8) of substrate layer (11)；
6) in the front deposit silicon nitride passivating film of substrate layer (11)；
7) by substrate layer (11) thinning back side, in substrate layer (11) upper making metal electrode.
4. 1064nm silicon substrate avalanche probe according to claim 3 manufacture method it is characterised in that: described substrate layer
(11) adopt the p-type High Resistivity Si that resistivity is 2000 ω cm ~ 10000 ω cm.
5. 1064nm silicon substrate avalanche probe according to claim 3 manufacture method it is characterised in that: step 2) in phosphorus
The process conditions of ion implantation technology are: implantation dosage is 1012/cm2~1014/cm2, Implantation Energy is 60kev ~ 140kev, mixes
Miscellaneous junction depth is 0.5 μm ~ 1.2 μm.
6. 1064nm silicon substrate avalanche probe according to claim 3 manufacture method it is characterised in that: phosphorus in step 3)
The process conditions of ion implantation technology are: implantation dosage is 1011/cm2~1014/cm2, Implantation Energy is 60kev ~ 140kev；High
The process conditions of warm knot technique are: knot temperature is 1000 DEG C ~ 1200 DEG C, and doping junction depth is 2.0 μm ~ 5.0 μm.
7. 1064nm silicon substrate avalanche probe according to claim 3 manufacture method it is characterised in that: boron in step 4)
The process conditions of ion implantation technology are: implantation dosage is 1012/cm2, Implantation Energy is 800kev ~ 1600kev, and adulterate junction depth
For 2.0 μm ~ 4.0 μm.
8. 1064nm silicon substrate avalanche probe according to claim 3 manufacture method it is characterised in that: phosphorus in step 5)
The process conditions of ion implantation technology are: implantation dosage is 1014/cm2~1015/cm2, energy is 60kev ~ 100kev.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610962410.3A CN106356290A (en) | 2016-10-28 | 2016-10-28 | 1064nm silicon-based avalanche detector and production method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610962410.3A CN106356290A (en) | 2016-10-28 | 2016-10-28 | 1064nm silicon-based avalanche detector and production method thereof |
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ID=57865295
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| CN201610962410.3A Pending CN106356290A (en) | 2016-10-28 | 2016-10-28 | 1064nm silicon-based avalanche detector and production method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108039390A (en) * | 2017-11-22 | 2018-05-15 | 天津大学 | Contactless protection ring single-photon avalanche diode and preparation method |
| CN108573989A (en) * | 2018-04-28 | 2018-09-25 | 中国科学院半导体研究所 | Silicon substrate avalanche photodetector array and preparation method thereof |
| CN108848327A (en) * | 2018-06-22 | 2018-11-20 | 中国电子科技集团公司第四十四研究所 | Silicon substrate blendes together CMOS-APD image sensor system |
| CN109192807A (en) * | 2018-08-31 | 2019-01-11 | 中国电子科技集团公司第四十四研究所 | Near-infrared response photodetector of lenticule light trapping structure and preparation method thereof |
| CN110660878A (en) * | 2019-09-26 | 2020-01-07 | 中国电子科技集团公司第十一研究所 | Planar mercury cadmium telluride avalanche diode detector and preparation method thereof |
| CN110676333A (en) * | 2019-10-10 | 2020-01-10 | 中国电子科技集团公司第四十四研究所 | Single photon Si-APD detector and manufacturing method thereof |
| CN111106201A (en) * | 2019-12-09 | 2020-05-05 | 中国电子科技集团公司第四十四研究所 | APD four-quadrant detector with novel structure and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0869561A2 (en) * | 1997-04-01 | 1998-10-07 | Hewlett-Packard Company | Avalanche photodiode and method of making the same |
| CN101931021A (en) * | 2010-08-28 | 2010-12-29 | 湘潭大学 | Single-photon avalanche diode and three-dimensional CMOS (Complementary Metal Oxide Semiconductor) image sensor based on same |
| CN101950775A (en) * | 2010-08-17 | 2011-01-19 | 武汉华工正源光子技术有限公司 | Method for manufacturing double diffusion type optical avalanche diode with incident light on back surface by adopting epitaxial equipment |
| CN103779437A (en) * | 2014-02-17 | 2014-05-07 | 苏州超锐微电子有限公司 | Single-photon-level resolution ratio sensor unit structure based on standard CMOS technology |
| CN104576809A (en) * | 2015-01-06 | 2015-04-29 | 中国电子科技集团公司第四十四研究所 | Silicon avalanche photodiode of 905 nm and manufacturing method thereof |
| CN105841823A (en) * | 2016-04-14 | 2016-08-10 | 董友强 | Manganese-silicon nanowire infrared detector and manufacturing method thereof |
-
2016
- 2016-10-28 CN CN201610962410.3A patent/CN106356290A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0869561A2 (en) * | 1997-04-01 | 1998-10-07 | Hewlett-Packard Company | Avalanche photodiode and method of making the same |
| CN101950775A (en) * | 2010-08-17 | 2011-01-19 | 武汉华工正源光子技术有限公司 | Method for manufacturing double diffusion type optical avalanche diode with incident light on back surface by adopting epitaxial equipment |
| CN101931021A (en) * | 2010-08-28 | 2010-12-29 | 湘潭大学 | Single-photon avalanche diode and three-dimensional CMOS (Complementary Metal Oxide Semiconductor) image sensor based on same |
| CN103779437A (en) * | 2014-02-17 | 2014-05-07 | 苏州超锐微电子有限公司 | Single-photon-level resolution ratio sensor unit structure based on standard CMOS technology |
| CN104576809A (en) * | 2015-01-06 | 2015-04-29 | 中国电子科技集团公司第四十四研究所 | Silicon avalanche photodiode of 905 nm and manufacturing method thereof |
| CN105841823A (en) * | 2016-04-14 | 2016-08-10 | 董友强 | Manganese-silicon nanowire infrared detector and manufacturing method thereof |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108039390A (en) * | 2017-11-22 | 2018-05-15 | 天津大学 | Contactless protection ring single-photon avalanche diode and preparation method |
| CN108573989A (en) * | 2018-04-28 | 2018-09-25 | 中国科学院半导体研究所 | Silicon substrate avalanche photodetector array and preparation method thereof |
| CN108573989B (en) * | 2018-04-28 | 2021-09-14 | 中国科学院半导体研究所 | Silicon-based avalanche photodetector array and manufacturing method thereof |
| CN108848327A (en) * | 2018-06-22 | 2018-11-20 | 中国电子科技集团公司第四十四研究所 | Silicon substrate blendes together CMOS-APD image sensor system |
| CN109192807A (en) * | 2018-08-31 | 2019-01-11 | 中国电子科技集团公司第四十四研究所 | Near-infrared response photodetector of lenticule light trapping structure and preparation method thereof |
| CN110660878A (en) * | 2019-09-26 | 2020-01-07 | 中国电子科技集团公司第十一研究所 | Planar mercury cadmium telluride avalanche diode detector and preparation method thereof |
| CN110676333A (en) * | 2019-10-10 | 2020-01-10 | 中国电子科技集团公司第四十四研究所 | Single photon Si-APD detector and manufacturing method thereof |
| CN110676333B (en) * | 2019-10-10 | 2021-05-11 | 中国电子科技集团公司第四十四研究所 | Single photon Si-APD detector and manufacturing method thereof |
| CN111106201A (en) * | 2019-12-09 | 2020-05-05 | 中国电子科技集团公司第四十四研究所 | APD four-quadrant detector with novel structure and preparation method thereof |
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