CN106531837B - Binode single-photon avalanche diode and preparation method thereof - Google Patents
Binode single-photon avalanche diode and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 96
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 5
- -1 boron ion Chemical class 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052796 boron Inorganic materials 0.000 claims description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 21
- 238000010348 incorporation Methods 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000002887 superconductor Substances 0.000 description 2
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 230000029918 bioluminescence Effects 0.000 description 1
- 238000005415 bioluminescence Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000010416 ion conductor Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
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Abstract
The invention discloses binode single-photon avalanche diode and preparation method thereof.Existing double junction structure photon detection efficiency is low.The inventive method：P substrate layers are adulterated to form p trap charge layers；Adulterate transoid depth n traps for p trap charge layers outer end；Transoid depth n traps the inner doping p doping control area；Adulterate n trap charge layers for transoid depth n traps outer end；N traps charge layer periphery doping p type semiconductor layers；Adulterate p+ type light absorbing layers for n trap charge layers outer end；Anode electrode is placed in p+ type light absorbing layers outer end；In p type semiconductor layers periphery doping n well layer and n+ type semiconductor layers, n+ type semiconductor layers incorporation n well layer；N+ type semiconductor layers outer end sets cathode electrode；In transoid depth n traps outer end doping p well layer and p+ type semiconductor layers, p+ type semiconductor layers incorporation p well layer；P+ type semiconductor layers outer end sets GND electrodes.The present invention, which has, realizes that shortwave/long wave detects tunable function, and has higher photon detection efficiency.
Description
Technical field
The invention belongs to single photon detection technical field, it is related to a kind of binode single-photon avalanche diode and its making side
Method.
Background technology
Single-photon detecting survey technology is a kind of atomic optical detection sensing technology, there is various applications in contemporary life
Potentiality, such as：In bioluminescence, quantum communications, atmosphere pollution detection, radioactivity detection, astronomical research, high sensor etc.
Aspect.Single-photon detector primarily now has photomultiplier (PTM), microchannel plate, superconducting nano-wire, avalanche photodide
(APD), superconductor single-photon detector and superconductor transform strike slip boundary sensor.In the list using single-photon avalanche photodiode
In photon detection system, photon detection efficiency (Photon Detection Efficiency, PDE) is to weigh avalanche optoelectronic two
The key factor of pole pipe single photon detection ability.Therefore, design has with high photon detection efficiency and to specific wavelength
Highly sensitive device architecture has great importance and use value.
The avalanche multiplication area of traditional single-photon avalanche photodiode is all made up of a planar junction, can only be directed to
The detectivity that single wavelength has had.And only double junction structure few in number has than relatively low photon detection effect at present
Rate.So, research is a kind of to be particularly important with high PDE and the device architecture for having higher sensitivity to different wave length.
The content of the invention
It is an object of the invention to for existing single-photon avalanche photoelectric diode structure above shortcomings, propose one
New binode single-photon avalanche photoelectric diode structure and preparation method thereof is planted, makes device in bluish-green optical band and near-infrared ripple
Section all has higher photon detection efficiency.The present invention is added in bias voltage thereon using double junction structures by control
Size realizes its detection in different-waveband, on the other hand, and it is strengthened in respective ripple using different methods for two PN junctions
The photon absorption efficiency of section.
Binode single-photon avalanche diode of the present invention, including in the p- substrate layers, p traps charge layer, transoid depth n of cylinder
Trap, n traps charge layer and p+ type light absorbing layers, and in the p doping control area of annular, n well layer, n+ type semiconductor layers, p-
Type semiconductor layer, p well layer, p+ type semiconductor layers, GND electrodes, cathode electrode, anode electrode and silicon dioxide layer；Described p-
Substrate layer, p traps charge layer, p doping control area, transoid depth n traps, n well layer, n+ type semiconductor layers, n traps charge layer, p-type half
Conductor layer, p+ types light absorbing layer, p well layer, p+ type semiconductor layers, GND electrodes, cathode electrode, anode electrode and silicon dioxide layer
It is coaxially disposed.Described transoid depth n traps are located at p trap charge layers outer end, and provided with gap between p trap charge layers；P doping controls
The internal diameter in region processed is more than transoid depth n trap external diameters, and two ends are respectively sleeved in outside transoid depth n traps and p trap charge layers；The n well layer,
The inner of n traps charge layer and p-type semiconductor layer is contacted with transoid depth n traps, and p-type semiconductor layer is placed in n well layer；P+ types
Light absorbing layer and n trap charge layers are placed in p-type semiconductor layer；The inner face of p+ type light absorbing layers is contacted with n trap charge layers,
Outer face and the outer face of p-type semiconductor layer and n well layer are concordant, and the external diameter of p+ type light absorbing layers is more than n trap charge layers
External diameter；Described n+ type semiconductor layers are placed in the groove of n well layer outer face, and the outer face of n well layer and n+ type semiconductor layers
Concordantly；P well layer is placed in outside n well layer, and p+ type semiconductor layers are placed in the groove of p well layer, and p+ type semiconductor layers and p well layer is outer
End face is concordant with n well layer；The outer face of described p+ type light absorbing layers sets anode electrode, the outer face of n+ type semiconductor layers
Cathode electrode is set, and the outer face of p+ type semiconductor layers sets GND electrodes；Described silicon dioxide layer covers n well layer, n+ types half
Conductor layer, p-type semiconductor layer, p+ types light absorbing layer, the outer end of p well layer and p+ type semiconductor layers.
The preparation method of binode single-photon avalanche diode of the present invention, it is specific as follows：
Step 1: carrying out Uniform Doped to silicon substrate using boron ion, p- substrate layers are formed；P- substrate layers using boron from
Son doping forms the p trap charge layers being coaxially disposed with p- substrate layers.
Step 2: carrying out the doping of transoid depth n traps using phosphonium ion in p trap charge layers outer end.
Step 3: inner adulterated using boron ion in transoid depth n traps to form p doping control area.P traps charge layer, p mix
Miscellaneous control area and transoid depth n traps the inner form a non-planar junction.
Step 4: the n trap charge layers to be formed and be coaxially disposed with transoid depth n traps that adulterated in transoid depth n traps outer end with phosphonium ion.
Step 5: carrying out the doping of p-type semiconductor layer using boron ion in n traps charge layer periphery.
Step 6: the doping of p+ type light absorbing layers is carried out using boron ion in the outer end of n trap charge layers, and p+ type light absorbs
Layer periphery is in p-type semiconductor layer.Anode electrode is arranged on the outer end of p+ type light absorbing layers.P+ types light absorbing layer and n traps electricity
Lotus layer forms a planar junction.
Step 7: carrying out the doping of n well layer and n+ type semiconductor layers, n+ using phosphonium ion in the periphery of p-type semiconductor layer
Type semiconductor layer is mixed in n well layer by n well layer outer face；N+ type semiconductor layers outer end sets cathode electrode；Outside transoid depth n traps
The doping of p well layer and p+ type semiconductor layers is carried out on end, p- substrate layers using boron ion, p+ type semiconductor layers are by p well layer outer end
In face incorporation p well layer；P+ type semiconductor layers outer end sets GND electrodes.
Step 8: silicon dioxide layer covering n well layer, n+ type semiconductor layers, p-type semiconductor layer, p+ types light absorbing layer, p traps
Layer and p+ type semiconductor layers.
Benefit of the invention is that：
The present invention, which has, realizes that shortwave/long wave detects tunable function, and more existing single-photon avalanche diode knot
Structure has higher photon detection efficiency.Under conditions of bias-voltage is crossed for 3V, bluish-green optical band PDE reaches 46%, near infrared light
Wave band PDE reaches 35%.Shallow junction part can effectively improve it to short using the combination of p+ types light absorbing layer and n trap charge layers
The absorptivity of the glistening light of waves；The p traps charge layer of deep knot point, the combination of p doping control areas and transoid depth n traps can increase snowslide times
Increase area, improve avalanche breakdown probability, and then improve photon detection efficiency.The voltage relationship on three electrodes is added in by control,
Can being operated in device, only shallow junction punctures, only deep junction breakdown and shallow junction knot deeply all puncture under three patterns, namely device
The light of different wave length can be detected respectively.
Brief description of the drawings
Fig. 1 is structural representation of the invention.
Embodiment
The present invention is described further below in conjunction with the accompanying drawings.
Reference picture 1, binode single-photon avalanche diode, including in the p- substrate layers 1, p traps charge layer 2, transoid of cylinder
Deep n traps 4, n traps charge layer 7 and p+ types light absorbing layer 9, and partly led in the p doping control area 3 of annular, n well layer 5, n+ types
Body layer 6, p-type semiconductor layer 8, p well layer 10, p+ type semiconductor layers 11, GND electrodes 12, cathode electrode 13, the and of anode electrode 14
Silicon dioxide layer 15；P- substrate layers 1, p traps charge layer 2, p doping control area 3, transoid depth n traps 4, n well layer 5, n+ type semiconductors
Layer 6, n traps charge layer 7, p-type semiconductor layer 8, p+ types light absorbing layer 9, p well layer 10, p+ type semiconductor layers 11, GND electrodes 12,
Cathode electrode 13, anode electrode 14 and silicon dioxide layer 15 are coaxially disposed.Transoid depth n traps 4 are located at the outer end of p traps charge layer 2, and
Gap is provided between p traps charge layer 2；The internal diameter of p doping control area 3 is more than the external diameter of transoid depth n traps 4, and two ends cover respectively
In outside transoid depth n traps 4 and p traps charge layer 2；N well layer 5, n traps charge layer 7 and p-type semiconductor layer 8 it is inner with transoid depth n
Trap 4 is contacted, and p-type semiconductor layer 8 is placed in n well layer 5；P+ types light absorbing layer 9 and n traps charge layer 7 are placed in p-type semiconductor
In layer 8；The inner face of p+ types light absorbing layer 9 is contacted with n traps charge layer 7, outer face and p-type semiconductor layer 8 and n well layer 5 it is outer
End face is concordant, and external diameter of the external diameter more than n traps charge layer 7 of p+ types light absorbing layer 9；N+ type semiconductor layers 6 are placed in n well layer 5
In the groove of outer face, and n well layer 5 is concordant with the outer face of n+ type semiconductor layers 6；P well layer 10 is placed in outside n well layer 5, p+ types half
Conductor layer 11 is placed in the groove of p well layer 10, and the outer face of p+ type semiconductor layers 11 and p well layer 10 is concordant with n well layer 5；p
The outer face of+type light absorbing layer 9 sets anode electrode 14, and the outer face of n+ type semiconductor layers 6 sets cathode electrode 13, p+ types half
The outer face of conductor layer 11 sets GND electrodes 12；The covering n of silicon dioxide layer 15 well layer 5, n+ type semiconductor layers 6, p-type semiconductor
Layer 8, p+ types light absorbing layer 9, the outer end of p well layer 10 and p+ type semiconductor layers 11.
P well layer 10, p+ type semiconductor layers 11 and n well layer 5, n+ type semiconductor layers 6 are used to form GND electrodes 12 and negative electrode electricity
The Ohmic contact of pole 13.Deep knot and shallow junction common cathode electrode 13, GND electrodes 12 are grounded.Through measuring, shallow junction is anti-in the present invention
It is 11.5V to breakdown voltage, the breakdown reverse voltage of deep knot is 23.1V.When cathode electrode 13 and anode electrode 14 it is reverse partially
Pressure is more than 11.5V, and when the reverse biased of cathode electrode 13 and GND electrodes 12 is less than 23.1V, device is operated in shallow junction and punctures mould
Formula, has preferable absorption to the light of short-wave band；When the reverse biased of cathode electrode 13 and anode electrode 14 is less than 11.5V, negative electrode
When the reverse biased of electrode 13 and GND electrodes 12 is more than 23.1V, device is operated in deep junction breakdown pattern, has to the light of long-wave band
Preferably absorb；When the reverse biased of cathode electrode 13 and anode electrode 14 is more than 11.5V, cathode electrode 13 and GND electrodes 12
Reverse biased also greater than 23.1V when, two knots all puncture, and the photon detection efficiency of device is both sums.
The preparation method of the binode single-photon avalanche diode, it is specific as follows：
Step 1: carrying out Uniform Doped to silicon substrate using boron ion, p- substrate layers 1 are formed；Boron is used in p- substrate layers 1
The p traps charge layer 2 that ion doping formation is coaxially disposed with p- substrate layers 1；
Step 2: carry out the doping of transoid depth n traps 4 using phosphonium ion in the outer end of p traps charge layer 2, concentration is from outer end to interior
Gradually increase at end；The electric-field intensity of the inner can be increased by so doing, and deep knot is easier occur avalanche breakdown.
Step 3: inner adulterated using boron ion in transoid depth n traps 4 to form p doping control area 3.P traps charge layer 2,
P doping control areas 3 and one non-planar junction of inner formation of transoid depth n traps 4, the depletion layer between them is the snow of deep knot point
Collapse multiplication region；For more conventional planar junction, it possesses bigger avalanche multiplication area, can improve the probability of avalanche breakdown, enter
And improve the absorption efficiency of long-wave band light.
Step 4: the n trap electric charges to be formed and be coaxially disposed with transoid depth n traps 4 that adulterated in the outer end of transoid depth n traps 4 with phosphonium ion
Layer 7.
Step 5: carrying out the doping of p-type semiconductor layer 8 using boron ion in the periphery of n traps charge layer 7, protection ring is played
Effect, can prevent the edge breakdown of shallow junction, and when the backward voltage being added on anode electrode 14 and cathode electrode 13 is not enough
The competition knot relative to deep knot can also be formed in the case of to cause shallow junction to puncture, short-wavelength light electronics is collected, makes deep knot
Investigative range is moved to long wave direction.
Step 6: the doping of p+ types light absorbing layer 9 is carried out using boron ion in the outer end of n traps charge layer 7, and p+ types light is inhaled
The periphery of layer 9 is received to be in p-type semiconductor layer 8.Anode electrode 14 is arranged on the outer end of p+ types light absorbing layer 9.P+ type light absorbing layers
9 form a planar junction with n traps charge layer 7, and the depletion layer between them is the avalanche multiplication area of shallow junction part.Using p+/n-
Well structures can have preferable absorption efficiency to short wavelength light.
Step 7: in the periphery use phosphonium ion progress n well layer 5 of p-type semiconductor layer 8 and mixing for n+ type semiconductor layers 6
Miscellaneous, n+ type semiconductor layers 6 are mixed in n well layer 5 by the outer face of n well layer 5；The outer end of n+ type semiconductor layers 6 sets cathode electrode 13；
The doping of p well layer 10 and p+ type semiconductor layers 11, p+ types half are carried out on the outer end of transoid depth n traps 4, p- substrate layers 1 using boron ion
Conductor layer 11 is mixed in p well layer 10 by the outer face of p well layer 10；The outer end of p+ type semiconductor layers 11 sets GND electrodes 12.
Step 8: the covering n of silicon dioxide layer 15 well layer 5, n+ type semiconductor layers 6, p-type semiconductor layer 8, p+ type light absorbs
Layer 9, p well layer 10 and p+ type semiconductor layers 11.
Shallow junction part has high detection efficient to blue green light using the combination of p+ types light absorbing layer and n trap charge layers.N traps
Charge layer establishes the avalanche multiplication area of the knot.The p-type semiconductor layer for being centered around p+ types light absorbing layer periphery is used for forming protection
Ring, prevents edge breakdown, while forming the competition knot relative to deep knot, collects short-wavelength light electronics, makes the deep detection tied
Scope is moved to long wave direction.
Deep knot point constitutes avalanche multiplication area by transoid depth n traps and p trap charge layers, and transoid depth n traps edge uses " peripheral trap
The method of control ", adulterates control area around the periphery of transoid depth n traps with p, controls its peripheral electric field within zone of reasonableness.
Traditional planar junction prevents edge breakdown by reducing edge electric field strength to reduce the cost of photon detection efficiency.This hair
It is bright on the premise of preventing edge from first puncturing, make its edge and center while puncturing, be consequently formed one and be not limited to center
The high electric field region in region, increases avalanche multiplication region well, improves avalanche breakdown probability, and further increase light
Sub- detection efficient.
Claims (2)
1. a kind of binode single-photon avalanche diode, including in the p- substrate layers of cylinder, p traps charge layer, transoid depth n traps, n traps
Charge layer and p+ type light absorbing layers, and partly led in the p doping control area of annular, n well layer, n+ type semiconductor layers, p-type
Body layer, p well layer, p+ type semiconductor layers, GND electrodes, cathode electrode, anode electrode and silicon dioxide layer；It is characterized in that：It is described
P- substrate layers, p traps charge layer, p doping control area, transoid depth n traps, n well layer, n+ type semiconductor layers, n traps charge layer, p-
Type semiconductor layer, p+ types light absorbing layer, p well layer, p+ type semiconductor layers, GND electrodes, cathode electrode, anode electrode and titanium dioxide
Silicon layer is coaxially disposed；Described transoid depth n traps are located at p trap charge layers outer end, and provided with gap between p trap charge layers；P mixes
The internal diameter of miscellaneous control area is more than transoid depth n trap external diameters, and two ends are respectively sleeved in outside transoid depth n traps and p trap charge layers；The n
The inner of well layer, n traps charge layer and p-type semiconductor layer is contacted with transoid depth n traps, and p-type semiconductor layer is placed in n well layer
It is interior；P+ types light absorbing layer and n trap charge layers are placed in p-type semiconductor layer；The inner face of p+ type light absorbing layers and n trap electric charges
Layer contact, outer face and the outer face of p-type semiconductor layer and n well layer are concordant, and the external diameter of p+ type light absorbing layers is more than n traps
The external diameter of charge layer；Described n+ type semiconductor layers are placed in the groove of n well layer outer face, and n well layer and n+ type semiconductor layers
Outer face it is concordant；P well layer is placed in outside n well layer, and p+ type semiconductor layers are placed in the groove of p well layer, and p+ type semiconductor layers and p
The outer face of well layer is concordant with n well layer；The outer face of described p+ type light absorbing layers sets anode electrode, n+ type semiconductor layers
Outer face cathode electrode is set, the outer faces of p+ type semiconductor layers sets GND electrodes；Described silicon dioxide layer covering n traps
Layer, n+ type semiconductor layers, p-type semiconductor layer, p+ types light absorbing layer, the outer end of p well layer and p+ type semiconductor layers.
2. a kind of preparation method of binode single-photon avalanche diode, it is characterised in that：This method is specific as follows：
Step 1: carrying out Uniform Doped to silicon substrate using boron ion, p- substrate layers are formed；Mixed in p- substrate layers using boron ion
The p trap charge layers that miscellaneous formation is coaxially disposed with p- substrate layers；
Step 2: carrying out the doping of transoid depth n traps using phosphonium ion in p trap charge layers outer end；
Step 3: adulterate to form p doping control area using boron ion close to inner periphery in transoid depth n traps, p doping controls
Region two ends are respectively sleeved in outside transoid depth n traps and p trap charge layers；P traps charge layer, p doping control areas and transoid depth n traps are inner
Form a non-planar junction；
Step 4: the n trap charge layers to be formed and be coaxially disposed with transoid depth n traps that adulterated in transoid depth n traps outer end with phosphonium ion；
Step 5: carrying out the doping of p-type semiconductor layer using boron ion in n traps charge layer periphery；
Step 6: the doping of p+ type light absorbing layers is carried out using boron ion in the outer end of n trap charge layers, and outside p+ type light absorbing layers
Enclose in p-type semiconductor layer；Anode electrode is arranged on the outer end of p+ type light absorbing layers；P+ types light absorbing layer and n trap charge layers
Form a planar junction；
Step 7: the doping of n well layer and n+ type semiconductor layers, n+ types half are carried out using phosphonium ion in the periphery of p-type semiconductor layer
Conductor layer is mixed in n well layer by n well layer outer face；N+ type semiconductor layers outer end sets cathode electrode；Transoid depth n traps outer end,
The doping of p well layer and p+ type semiconductor layers is carried out on p- substrate layers using boron ion, p+ type semiconductor layers are mixed by p well layer outer face
Enter in p well layer；P+ type semiconductor layers outer end sets GND electrodes；
Step 8: silicon dioxide layer covering n well layer, n+ type semiconductor layers, p-type semiconductor layer, p+ types light absorbing layer, p well layer and
P+ type semiconductor layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611245601.4A CN106531837B (en) | 2016-12-29 | 2016-12-29 | Binode single-photon avalanche diode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611245601.4A CN106531837B (en) | 2016-12-29 | 2016-12-29 | Binode single-photon avalanche diode and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106531837A CN106531837A (en) | 2017-03-22 |
| CN106531837B true CN106531837B (en) | 2017-10-17 |
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| CN107039425B (en) * | 2017-03-29 | 2018-07-13 | 湖北京邦科技有限公司 | A kind of semiconductor optoelectronic multiplier device |
| KR20200110717A (en) * | 2017-06-26 | 2020-09-25 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | Single-photon avalanche diodes and methods for operating single-photon avalanche diodes |
| CN108511467B (en) * | 2018-03-06 | 2020-06-19 | 南京邮电大学 | Near-infrared wide-spectrum CMOS single-photon avalanche diode detector and manufacturing method thereof |
| CN109300992B (en) * | 2018-08-16 | 2020-01-21 | 杭州电子科技大学 | Single photon avalanche diode with high detection efficiency and manufacturing method thereof |
| US10896953B2 (en) * | 2019-04-12 | 2021-01-19 | Globalfoundries Inc. | Diode structures |
| CN110993710B (en) * | 2019-12-30 | 2021-11-02 | 上海集成电路研发中心有限公司 | Single-photon avalanche diode and preparation method thereof |
| CN114038865A (en) * | 2021-02-26 | 2022-02-11 | 神盾股份有限公司 | Single photon avalanche diode and single photon avalanche diode array |
| CN115084306A (en) * | 2021-03-11 | 2022-09-20 | 西安电子科技大学 | Integrated silicon-based wide-spectrum single-photon avalanche diode and manufacturing method thereof |
| CN114141903B (en) * | 2021-11-26 | 2023-11-21 | 中国科学院长春光学精密机械与物理研究所 | Double PN junction type silicon-based photodiode and preparation method thereof |
| CN114242826B (en) * | 2021-12-02 | 2023-12-22 | 武汉新芯集成电路制造有限公司 | Single photon avalanche diode and forming method thereof |
| CN114497265B (en) * | 2022-02-11 | 2023-03-28 | 中国科学院半导体研究所 | Avalanche photoelectric detector |
| CN115084307B (en) * | 2022-08-18 | 2022-10-28 | 北京邮电大学 | Anti-irradiation reinforced single photon detector and preparation method thereof |
| CN115347072B (en) * | 2022-10-17 | 2022-12-20 | 季华实验室 | Double-junction single-photon avalanche diode and photoelectric detector array |
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Effective date of registration: 20190220 Address after: Room 2205, 7th floor, 111 Fengpu Avenue, Fengxian District, Shanghai 201400 Patentee after: Quantitative Sensing Technology (Shanghai) Co., Ltd. Address before: 310018 2 street, Xiasha Higher Education Park, Hangzhou, Zhejiang Patentee before: Hangzhou Electronic Science and Technology Univ |