CN103137773B - Si-APD photodetector being photosensitive layer with black silicon and preparation method thereof - Google Patents

Si-APD photodetector being photosensitive layer with black silicon and preparation method thereof Download PDF

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CN103137773B
CN103137773B CN201310077749.1A CN201310077749A CN103137773B CN 103137773 B CN103137773 B CN 103137773B CN 201310077749 A CN201310077749 A CN 201310077749A CN 103137773 B CN103137773 B CN 103137773B
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diffusing
black silicon
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CN103137773A (en
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李伟
王垠
郭安然
余峰
王涛
蒋亚东
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University of Electronic Science and Technology of China
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Abstract

The invention discloses a kind of with black silicon Si-APD photodetector that is photosensitive layer and preparation method thereof, belong to technical field of photoelectric detection.Described photodetector comprises silicon intrinsic substrate 1, is positioned at the N of silicon intrinsic substrate 1 upper face center +district 2, be positioned at N +p type island region 3 below district, be positioned at silicon intrinsic substrate top surface surrounding annular N-type region 4, be positioned at N +the N of district's upper surface +the black silicon layer 5 in district, be positioned at the P of silicon intrinsic substrate lower surface +district 6, be positioned at N +the top electrode 7 of the black silicon layer in district and annular N-type region upper surface and be positioned at P +the bottom electrode 8 of district's lower surface.The present invention take black silicon material as photosensitive layer, simultaneously at N +district and p type island region surrounding add annular N-type region, make the present invention can absorb near infrared band light wave, have higher absorptivity and wider response wave band, preparation technology is comparatively simple, cost is low, have be easy to integrated, fast response time, responsiveness are high and response wave band is wide feature.

Description

Si-APD photodetector being photosensitive layer with black silicon and preparation method thereof
Technical field
The invention belongs to technical field of photoelectric detection, relate to photoelectric detector structure, especially a kind of take black silicon material as Si-APD photodetector of photosensitive layer and preparation method thereof.
Background technology
Photodetector, as the important component part of Fiber Optical Communication System, infrared imaging system, laser engineered net shaping and LDMS etc., is all widely used in civil and military.APD is a kind of photo-detector with interior gain ability, has very high sensitivity, is widely used in ultra high-speed optical communication, signal transacting, measurement and sensor-based system.APD is the widely used photodetector of modern bit rate optical communication system, little with its volume, to measure wavelength band wide and have a series of advantages such as higher sensitivity near infrared band, a large amount of in the association areas such as low light level field measurement, photon counting.Due to APD photodetector have higher in gain and detectivity higher than PIN type optical diode, be therefore improved device the most frequently used in current 1.06 μm of range finder using lasers.
At present, widely use in fields such as Fibre Optical Sensors as the photodetector of high sensitivity, high-responsivity using the APD that InGaAs makes, and occupy leading position.But, InGaAs single-crystal semiconductor material exist expensive, thermomechanical property is poor, crystal mass is poor and the not easily shortcoming such as compatible with existing silicon microelectronic technique.Si material have be easy to purify, easily doping, aboundresources, cost are low, be easy to the advantage such as large-scale integrated and correlation technique maturation, are the class materials be most widely used in semicon industry.But, due to its energy gap comparatively large (1.12eV), even if deposited anti-reflection film to improve the responsiveness of detector in Si photodetector photosurface district, the lightwave signal detecting and be greater than 1100nm still cannot be reached and the object exported with the signal of telecommunication.
Black silicon material is a kind of material layer of silicon face micro-structural, and the absorptivity of this material to visible ray and near infrared light can reach more than 90%, and spectral absorption scope covers near ultraviolet ~ near infrared band (0.25 μm ~ 2.5 μm).The method of this black silicon material of current preparation has a lot, comprises femtosecond laser method, reactive ion etching method, general chemistry etching and electrochemical erosion method etc.
Along with the discovery of this black silicon material, making to develop the New Si-APD photodetector with high-responsivity and wide spectral response becomes possibility.
Summary of the invention
For above-mentioned prior art, the technical problem to be solved in the present invention is: InGaAs crystalline material exist expensive, thermomechanical property is poor, crystal mass is poor and not easily with the shortcoming of existing silicon microelectronic technique compatibility; Si semi-conducting material due to energy gap comparatively large, there is the deficiency that responsiveness is lower, spectrographic detection is limited in scope in traditional Si-APD photodetector.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme:
The Si-APD photodetector being photosensitive layer with black silicon, is characterized in that, comprises silicon intrinsic substrate 1, is positioned at the N of silicon intrinsic substrate 1 upper face center +district 2, be positioned at N +p type island region 3 below district 2, be positioned at silicon intrinsic substrate 1 upper surface surrounding annular N-type region 4, be positioned at N +the N of district 2 upper surface +the black silicon layer 5 in district, be positioned at the P of silicon intrinsic substrate 1 lower surface +district 6, be positioned at N +the top electrode 7 of the black silicon layer in district 5 and annular N-type region 4 upper surface and be positioned at P +the bottom electrode 8 of district 6 lower surface.
In the present invention, described N +district 2 is the heavy diffusing, doping N-type region of phosphorus, and junction depth is 0.1 μm ~ 0.5 μm, doping content>=1 × 10 20ion/cm 3.
In the present invention, described p type island region 3 is boron diffusing, doping p type island region, and junction depth is 0.5 μm ~ 3.0 μm, and doping content scope is 4 × 10 15ion/cm 3~ 2 × 10 17ion/cm 3.
In the present invention, described annular N-type region 4 is phosphorus diffusing, doping N-type region, and junction depth is 1.5 μm ~ 3.5 μm, and doping content scope is 4 × 10 15ion/cm 3~ 2 × 10 17ion/cm 3.
In the present invention, described N +the black silicon layer 5 in district is N +surface, district 2 is carried out Se or Te ion implantation doping and is obtained after chemical corrosion extended surface; Wherein Se or Te ion implantation dosage scope is 1 × 10 14ion/cm 2~ 1 × 10 16ion/cm 2.
In the present invention, described P +district 6 is the heavy diffusing, doping p type island region of boron, and junction depth is 0.5 μm ~ 2.0 μm, doping content>=1 × 10 20ion/cm 3.
In the present invention, described top electrode 7 and bottom electrode 8 are metal film electrode, and metal material is aluminium (Al), gold (Au) or golden evanohm (Au/Cr).
Preparing previously described take black silicon material as the preparation method of the Si-APD photodetector of photosensitive layer, it is characterized in that, comprises the following steps:
1. at intrinsic silicon substrate 1 upper surface oxidation growth SiO 2rete, intrinsic silicon substrate used is the high resistant monocrystalline substrate in (111) crystal orientation, and resistivity is 1000 Ω cm ~ 2000 Ω cm; SiO 2thicknesses of layers is 300nm ~ 400nm, and growth temperature is 1000 DEG C;
2. at SiO 2film surface surrounding makes the figure of annular N-type region 4 by lithography, then carries out phosphorus diffusing, doping and forms annular N-type region 4; When phosphorus diffusing, doping forms annular N-type region 4, temperature is 1000 DEG C ~ 1100 DEG C, and phosphorus diffusing, doping concentration range is 4 × 10 15ion/cm 3~ 2 × 10 17ion/cm 3, junction depth is 1.5 μm ~ 3.5 μm;
3. at SiO 2film surface makes the figure of p type island region 3 by lithography, then carries out boron diffusing, doping and forms p type island region 3; During boron diffusing, doping formation p type island region 3, temperature is 1000 DEG C, and the junction depth of p type island region 3 is 0.5 μm ~ 3.0 μm, and doping content scope is 4 × 10 15ion/cm 3~ 2 × 10 17ion/cm 3;
4. at SiO 2film surface makes N by lithography +the figure in district 2, then carries out the heavy diffusing, doping of phosphorus and forms N +district 2; The heavy diffusing, doping of phosphorus forms N +during district 2, temperature is 1000 DEG C, N +the junction depth in district 2 is 0.1 μm ~ 0.5 μm, doping content>=1 × 10 20ion/cm 3;
5. to the phosphorus heavy doping N 4. processed through step +district 2 carries out Se or Te ion implantation doping after chemical corrosion extended surface, thus forms N +the black silicon layer 5 in district;
6. the heavy diffusing, doping of boron is carried out to intrinsic silicon substrate 1 lower surface and form P +district 6; The heavy diffusing, doping of boron forms P +during district 6, temperature is 1000 DEG C ~ 1100 DEG C, heavy diffusing, doping concentration>=1 × 10 of boron 20ion/cm 3, junction depth is 0.5 μm ~ 2.0 μm;
7. electrode preparation.
As further description of the present invention, described step is 5. to N +when district 2 carries out the process of chemical corrosion extended surface, corrosive liquid used is that the hydrogen peroxide being 30% by deionized water, absolute ethyl alcohol, hydrofluoric acid, gold chloride and concentration mixes by volume; Wherein, absolute ethyl alcohol consumption volume accounts for corrosive liquid total volume percent scope is 9% ~ 15%; It is 9% ~ 15% that hydrofluoric acid volume accounts for corrosive liquid total volume percent scope; It is 4% ~ 7% that gold chloride volume accounts for corrosive liquid total volume percent scope; Concentration be 30% hydrogen peroxide volume to account for corrosive liquid total volume percent scope be 50% ~ 60%; All the other are deionized water.
As further description of the present invention, described step is 5. to the phosphorus heavy doping N 4. processed through step +the N on surface, district 2 +when district carries out ion implantation doping, doped chemical is selenium (Se) or tellurium (Te), and ion implantation dosage scope is 1 × 10 14ion/cm 2~ 1 × 10 16ion/cm 2.
Compared with prior art, the present invention has following beneficial effect:
One, during devices function, light radiation or various reflects laser that material inspires is detected by the photosurface of Si-APD photodetector and N +the black silicon layer in district absorbed, the photo-generated carrier (hole-electron pair) produced is high-speed motion under the inner high electric field action of APD optical diode, impact ionization is passed through in motion process, produce secondary, three new hole-electron pairs that quantity is hole-electron pair tens times first, thus form very large optical signal current.
Two, in existing Si-APD photodetector, have employed black silicon material as photosensitive layer, because black silicon material is through the process of chemical corrosion extended surface, have high specific area, therefore absorptivity is significantly improved, and absorptivity can reach more than 90%; Meanwhile, black silicon material forms N through the heavy diffusing, doping of phosphorus +district's conduction type, as the absorption light anti-reflection function district of APD photodetector; Finally, Se or Te ion implantation doping contributes to photosensitive layer and absorbs near infrared band light wave, thus effectively widens the response wave band of photodetector.
Three, the present invention is compared with traditional Si-APD photodetector, at the N of device +district and p type island region surrounding add annular N-type region, due to the existence of annular N-type region, can reduce the generation of horizontal dark current, contribute to the light induced electron produced when absorbing rapidly illumination, thus greatly improve the response speed of device.
Four, the present invention is a kind of New Si-APD photodetector structure combined with traditional Si-APD photodetector by Novel black silicon materials; There is due to black silicon material the features such as wide spectral absorption and antiradar reflectivity, the responsiveness that the characteristic sum making this New Si-APD photodetector have spectrum extension is higher, can improve responsiveness and the quantum efficiency of device especially in 700nm ~ 1200nm wave-length coverage.
Five, provided by the invention take black silicon material as the Si-APD photodetector material therefor of photosensitive layer is all stock with silicon, be therefore easy to and existing semiconductor standard processes compatible, preparation process is simple, and cost is low; Further, due to black silicon material micro-structural and have oxygen group elements doping, make this new device have higher responsiveness and wide spectral response range.
Accompanying drawing explanation
Fig. 1 is provided by the invention with the cross-sectional view of the black silicon Si-APD photodetector that is photosensitive layer;
Fig. 2 is provided by the invention with the top plan view structural representation of the black silicon Si-APD photodetector that is photosensitive layer;
Fig. 3 is provided by the invention with preparation method's schematic flow sheet of the black silicon Si-APD photodetector that is photosensitive layer;
Wherein Reference numeral: 1 be silicon intrinsic substrate, 2 is N +district, 3 is p type island regions, 4 are annular N-type region, 5 is N +the black silicon layer in district, 6 is P +district, 7 is top electrodes, 8 is bottom electrodes.
Embodiment
Below in conjunction with drawings and Examples, specific embodiment of the invention method is further described.
The Si-APD photodetector being photosensitive layer with black silicon, as shown in Figure 1, 2, comprises silicon intrinsic substrate 1, is positioned at the N of silicon intrinsic substrate 1 upper face center +district 2, be positioned at N +p type island region 3 below district 2, be positioned at silicon intrinsic substrate 1 upper surface surrounding annular N-type region 4, be positioned at N +the N of district 2 upper surface +the black silicon layer 5 in district, be positioned at the P of silicon intrinsic substrate 1 lower surface +district 6, be positioned at N +the top electrode 7 of the black silicon layer in district 5 and annular N-type region 4 upper surface and be positioned at P +the bottom electrode 8 of district 6 lower surface.
In technique scheme:
Described N +district 2 is the heavy diffusing, doping N-type region of phosphorus, and junction depth is 0.1 μm ~ 0.5 μm, doping content>=1 × 10 20ion/cm 3.
Described p type island region 3 is boron diffusing, doping p type island region, and junction depth is 0.5 μm ~ 3.0 μm, and doping content scope is 4 × 10 15ion/cm 3~ 2 × 10 17ion/cm 3.
Described annular N-type region 4 is phosphorus diffusing, doping N-type region, and junction depth is 1.5 μm ~ 3.5 μm, and doping content scope is 4 × 10 15ion/cm 3~ 2 × 10 17ion/cm 3.
Described N +the black silicon layer 5 in district is N +surface, district 2 is carried out Se or Te ion implantation doping and is obtained after chemical corrosion extended surface; Wherein Se or Te ion implantation dosage scope is 1 × 10 14ion/cm 2~ 1 × 10 16ion/cm 2.
Described P +district 6 is the heavy diffusing, doping p type island region of boron, and junction depth is 0.5 μm ~ 2.0 μm, doping content>=1 × 10 20ion/cm 3.
Described top electrode 7 and bottom electrode 8 are metal film electrode, and metal material can be aluminium (Al), gold (Au) or golden evanohm (Au/Cr).
A preparation method for the Si-APD photodetector being photosensitive layer with black silicon, as shown in Figure 3, comprises the following steps:
Step 1: at intrinsic silicon substrate 1 upper surface oxidation growth SiO 2rete.Intrinsic silicon substrate used is the high resistant monocrystalline substrate in (111) crystal orientation, and resistivity is 1000 Ω cm ~ 2000 Ω cm; SiO 2thicknesses of layers is 300nm ~ 400nm, and growth temperature is 1000 DEG C.
Step 2: at SiO 2film surface surrounding makes the figure of annular N-type region 4 by lithography, then carries out phosphorus diffusing, doping and forms annular N-type region 4; When phosphorus diffusing, doping forms annular N-type region 4, temperature is 1000 DEG C ~ 1100 DEG C, and phosphorus diffusing, doping concentration range is 4 × 10 15ion/cm 3~ 2 × 10 17ion/cm 3, junction depth is 1.5 μm ~ 3.5 μm.
Step 3: at SiO 2film surface makes the figure of p type island region 3 by lithography, then carries out boron diffusing, doping and forms p type island region 3; During boron diffusing, doping formation p type island region 3, temperature is 1000 DEG C, and the junction depth of p type island region 3 is 0.5 μm ~ 3.0 μm, and doping content scope is 4 × 10 15ion/cm 3~ 2 × 10 17ion/cm 3.
Step 4: at SiO 2film surface makes N by lithography +the figure in district 2, then carries out the heavy diffusing, doping of phosphorus and forms N +district 2; The heavy diffusing, doping of phosphorus forms N +during district 2, temperature is 1000 DEG C, N +the junction depth in district 2 is 0.1 μm ~ 0.5 μm, doping content>=1 × 10 20ion/cm 3.
Step 5: to the phosphorus heavy doping N processed through step 4 +district 2 carries out Se or Te ion implantation doping after chemical corrosion extended surface, thus forms N +the black silicon layer 5 in district.
Step 6: the heavy diffusing, doping of boron is carried out to intrinsic silicon substrate 1 lower surface and forms P +district 6; The heavy diffusing, doping of boron forms P +during district 6, temperature is 1000 DEG C ~ 1100 DEG C, heavy diffusing, doping concentration>=1 × 10 of boron 20ion/cm 3, junction depth is 0.5 μm ~ 2.0 μm.
Step 7: prepared by electrode.
Further, step 5 described above couple N +when district 2 carries out the process of chemical corrosion extended surface, corrosive liquid used is that the hydrogen peroxide being 30% by deionized water, absolute ethyl alcohol, hydrofluoric acid, gold chloride and concentration mixes by volume.Wherein, absolute ethyl alcohol consumption volume accounts for corrosive liquid total volume percent scope is 9% ~ 15%; It is 9% ~ 15% that hydrofluoric acid volume accounts for corrosive liquid total volume percent scope; It is 4% ~ 7% that gold chloride volume accounts for corrosive liquid total volume percent scope; Concentration be 30% hydrogen peroxide volume to account for corrosive liquid total volume percent scope be 50% ~ 60%; All the other are deionized water.Step 5 is to the phosphorus heavy doping N processed through step 4 +the N on surface, district 2 +when district carries out ion implantation doping, doped chemical is selenium (Se) or tellurium (Te), and ion implantation dosage scope is 1 × 10 14ion/cm 2~ 1 × 10 16ion/cm 2.
What prepare through above-mentioned steps take black silicon material as the Si-APD photodetector of photosensitive layer, and after tested, its response wave length scope is 400nm ~ 1200nm, and responsiveness scope is 0.5A/W ~ 30A/W.
Below be only the representative embodiment in the numerous embody rule scope of the present invention, protection scope of the present invention is not constituted any limitation.All technical schemes adopting conversion or equivalence to replace and formed, all drop within rights protection scope of the present invention.

Claims (3)

1., with the preparation method of the black silicon Si-APD photodetector that is photosensitive layer, it is characterized in that, comprise the following steps:
1. at intrinsic silicon substrate (1) upper surface oxidation growth SiO 2rete, intrinsic silicon substrate used be [111] to high resistant monocrystalline substrate, resistivity is 1000 Ω cm ~ 2000 Ω cm; SiO 2thicknesses of layers is 300nm ~ 400nm, and growth temperature is 1000 DEG C;
2. at SiO 2film surface surrounding makes the figure of annular N-type region (4) by lithography, then carries out phosphorus diffusing, doping and forms annular N-type region (4); When phosphorus diffusing, doping forms annular N-type region (4), temperature is 1000 DEG C ~ 1100 DEG C, and phosphorus diffusing, doping concentration range is 4 × 10 15ion/cm 3~ 2 × 10 17ion/cm 3, junction depth is 1.5 μm ~ 3.5 μm;
3. at SiO 2film surface makes the figure of p type island region (3) by lithography, then carries out boron diffusing, doping and forms p type island region (3); During boron diffusing, doping formation p type island region (3), temperature is 1000 DEG C, and the junction depth of p type island region (3) is 0.5 μm ~ 3.0 μm, and doping content scope is 4 × 10 15ion/cm 3~ 2 × 10 17ion/cm 3;
4. at SiO 2film surface makes N by lithography +the figure in district (2), then carries out the heavy diffusing, doping of phosphorus and forms N +district (2); The heavy diffusing, doping of phosphorus forms N +time district (2), temperature is 1000 DEG C, N +the junction depth in district (2) is 0.1 μm ~ 0.5 μm, and doping content scope is>=1 × 10 20ion/cm 3;
5. to the phosphorus heavy doping N through 4. processing +district (2) carries out Se or Te ion implantation doping after chemical corrosion extended surface, thus forms N +the black silicon layer in district (5);
6. the heavy diffusing, doping of boron is carried out to intrinsic silicon substrate (1) lower surface and form P +district (6); The heavy diffusing, doping of boron forms P +time district (6), temperature is 1000 DEG C ~ 1100 DEG C, heavy diffusing, doping concentration>=1 × 10 of boron 20ion/cm 3, junction depth is 0.5 μm ~ 2.0 μm;
7. electrode preparation.
2. according to claim 1 with the preparation method of the black silicon Si-APD photodetector that is photosensitive layer, it is characterized in that, described step is 5. to N +when district (2) carries out the process of chemical corrosion extended surface, corrosive liquid used is that the hydrogen peroxide being 30% by deionized water, absolute ethyl alcohol, hydrofluoric acid, gold chloride and concentration mixes by volume; Wherein, absolute ethyl alcohol consumption volume accounts for corrosive liquid total volume percent scope is 9% ~ 15%; It is 9% ~ 15% that hydrofluoric acid volume accounts for corrosive liquid total volume percent scope; It is 4% ~ 7% that gold chloride volume accounts for corrosive liquid total volume percent scope; Concentration be 30% hydrogen peroxide volume to account for corrosive liquid total volume percent scope be 50% ~ 60%; All the other are deionized water.
3. according to claim 1 with the preparation method of the black silicon Si-APD photodetector that is photosensitive layer, it is characterized in that, described step is 5. to the phosphorus heavy doping N 4. processed through step +the N on surface, district (2) +when district carries out ion implantation doping, doped chemical is selenium Se or tellurium Te, and ion implantation dosage scope is 1 × 10 14ion/cm 2~ 1 × 10 16ion/cm 2.
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