CN103400887B - A kind of preparation method of back-illuminated type Si-PIN photodetector - Google Patents
A kind of preparation method of back-illuminated type Si-PIN photodetector Download PDFInfo
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- CN103400887B CN103400887B CN201310343246.4A CN201310343246A CN103400887B CN 103400887 B CN103400887 B CN 103400887B CN 201310343246 A CN201310343246 A CN 201310343246A CN 103400887 B CN103400887 B CN 103400887B
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Abstract
The invention discloses a kind of back-illuminated type Si-PIN photodetector and preparation method thereof, it relates to the photoelectric detector structure in technical field of photoelectric detection, this photodetector comprises I type substrate 1, P district 2, P+ district 3, nano-micro structure silicon layer N district 4 and upper/lower electrode, and described electrode comprises the upper end electrode 5 be positioned in P district 2 and P+ district 3 and the lower end electrode 6 be positioned in nano-micro structure silicon layer N district 4.Upper end electrode 5 is for being connected with external circuits negative electrode; Lower end electrode 6 is for being connected with external circuits anode.This New Si photodetector solve traditional Si photodetector responsiveness less, cannot the problems such as near infrared band be responded, improve the absorptivity to visible ray and near infrared light, make response wave band expand near infrared band, responsiveness is higher.
Description
Technical field
The invention belongs to technical field of photoelectric detection, relate to photoelectric detector structure, be specifically related to a kind of with nano-micro structure silicon back-illuminated type Si-PIN photodetector that is photosensitive layer and preparation method thereof.
Background technology
Photodetector, as the important component part of Fiber Optical Communication System, infrared imaging system, laser engineered net shaping and LDMS etc., is all widely used in civil and military.Now widely used photodetector mainly contains Si photodetector that detection wave-length coverage is 400nm ~ 1000nm and detection wave-length coverage is the InGaAs near infrared photodetector of 1000nm ~ 3000nm.Wherein, Si material owing to being easy to purify, easily doping, aboundresources, cost be low, be easy to the advantage such as large-scale integrated and correlation technique maturation, is the class material be most widely used in semicon industry.But, due to its energy gap more greatly 1.12eV, even if deposited anti-reflection film in Si photodetector photosurface district to improve the responsiveness of detector, still cannot reach and be greater than 1000nm near-infrared light waves signal and the object exported with the signal of telecommunication at lower biased lower high-efficient detection.Therefore, when needing detection to be greater than the near infrared light signal of 1000nm, conventional InGaAs photodetector replaces.But, InGaAs single-crystal semiconductor material exist again expensive, thermomechanical property is poor, crystal mass is poor and the not easily shortcoming such as compatible with existing silicon microelectronic technique.
Nano-micro structure silicon is a kind of to be etched by nano impression or other nanometer etching technology makes the material layer of silicon materials surface micro-structure nanometer, and this material has array fine microstructure and the large-area uniformity of nanoscale.Advanced nanometer etching technology good process repeatability, and compatible with microelectric technique, has that process principle is simple, resolution is high, production efficiency is high, low cost and other advantages.Meanwhile, the absorptivity of nano-micro structure silicon to visible ray and near infrared light can reach more than 90%, and spectral absorption scope can be expanded to near-infrared direction compared to traditional silicon material.
Along with the development of this nano-micro structure silicon materials, making to develop the New Si-PIN photoelectric detector with high-responsivity and wide spectral response becomes possibility.
Summary of the invention
For above-mentioned prior art, the object of the present invention is to provide a kind of with nano-micro structure silicon back-illuminated type Si-PIN photodetector that is photosensitive layer and preparation method thereof, it is intended to the performance improving traditional Si photodetector, makes it have that responsiveness is high, the feature of fast response time and response spectrum wide waveband.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of back-illuminated type Si-PIN photodetector, as shown in Figure 1, 2, comprises I type substrate 1, is arranged on the P district 2 of I type substrate 1 overcentre, to be located at above I type substrate 1 both sides and the P be close to P district
+district 3, be positioned at I type substrate back N-type nano-micro structure silicon layer 4, be positioned at p type island region 2 and P
+the upper end electrode 5 of district 3 upper surface and be positioned at the lower end electrode 6 of N-type nano-micro structure silicon layer 4 times both sides.
In such scheme:
Described N-type nano-micro structure silicon layer is the laminar microstructure in three dimensions array distribution obtained by carrying out nano impression etching or other nanometer etching technology to the heavy diffusing, doping N district of phosphorus.
Described N-type nano-micro structure silicon layer is array arrangement, and its silicon nano-pillar diameter is 50 ~ 100nm, is highly 300 ~ 500nm, and the cycle is 100 ~ 200nm.
Described P+ district 3 is the heavy diffusing, doping p type island region of boron, and its doping content scope is 1 × 10
18ion/cm
3~ 5 × 10
19ion/cm
3.
Described upper end electrode 5 and lower end electrode 6 are metal film electrode, and thickness of electrode is 50nm ~ 150nm, and metal material can be aluminium Al, golden Au or golden evanohm (Au/Cr).
Provided by the invention with nano-micro structure silicon back-illuminated type Si-PIN photodetector that is photosensitive layer and preparation method thereof, it is characterized in that, comprise the steps:
Step 1: the silicon single crystal flake backing material that preparation surface cleans, dry high resistant and crystal orientation are (111);
Step 2: be 350 μm by silicon single crystal flake grinding and polishing to thickness, and at substrate face oxidation growth SiO
2rete, thicknesses of layers is 300nm ~ 400nm, and growth temperature is 1000 DEG C;
Step 3: at SiO
2film surface spin coating last layer photoresist, and utilize mask graph to photoetching offset plate figure, at SiO
2rete makes graphics field, P+ district by lithography to be etched;
Step 4: patterned surf zone is etched, removes not protected SiO
2rete forms P+ district 3 protection zone boron and heavily spreads window;
Step 5: heavily spread window to etching Hou P+ district 3 boron and carry out boron heavy diffusing, doping formation P+ district 3 at 1000 DEG C ~ 1100 DEG C, diffusion concentration scope is 1 × 10
18ion/cm
3~ 5 × 10
19ion/cm
3, junction depth is 1.0 μm ~ 3.5 μm, then removes photomask surface glue;
Step 6: at SiO
2film surface spin coating last layer photoresist, and utilize mask graph to photoetching offset plate figure, at SiO
2rete makes graphics field, P district 2 by lithography to be etched;
Step 7: patterned surf zone is etched, removes not protected SiO
2rete forms P district 2 boron diffusion window;
Step 8: carry out boron diffusing, doping to P district 2 boron diffusion window and form P district 2 at 1000 DEG C, junction depth is 0.2 μm ~ 3.0 μm, then removes photomask surface glue;
Step 9: positive glue is coated with to substrate face, and thinning, grinding, the polished substrate back side, make substrate thickness down be 100 μm ~ 200 μm, and carry out the heavy diffusing, doping of phosphorus and form N district, junction depth is about 3 μm ~ 4 μm, then removes the positive glue in front;
Step 10: utilize acetone, ethanol clean the silicon substrate after the heavy diffusing, doping of phosphorus and dry successively;
Step 11: be coated with last layer thin layer thermoplastic shape macromolecular material (as PMMA) on substrate;
Step 12: heat up and reach the vitrification point T of this thermoplastic
gon, utilize nano-imprint stamp to carry out mold pressing to thermoplastic material;
Step 13: reduce temperature and make thermoplastic material cures, remove impression block subsequently;
Step 14: the method adopting deep trouth reactive ion etching, with the thermoplastic after above-mentioned solidification for mask, carries out anisotropic etching to the silicon materials substrate below it, obtains corresponding figure, thus forms N-type nano-micro structure silicon layer.
Step 15: at P district and P+ district surface deposition metallic diaphragm, forms upper end electrode;
Step 16: at N-type nano-micro structure silicon-containing layer deposition metallic diaphragm;
Step 17: spin coating one deck photoresist on silicon substrate back metal thin layer, and utilize mask pattern to photoetching offset plate figure;
Step 18: etch patterned region, removes silicon substrate back side excess metal rete, and removes residue photoresist, thus forms lower end electrode.
During devices function, be detected light radiation or various reflects laser that material inspires by the photosurface of New Si-PIN photoelectric detector and N-type nano-micro structure silicon layer absorb, produce photo-generated carrier, these free charges drift about respectively to the two poles of the earth under External Electrical Field, thus produce photovoltage or photoelectric current.
In the preparation method of above-mentioned photodetector, the resistivity of the silicon single crystal flake backing material in described step 1 is 1000 Ω cm ~ 2000 Ω cm.
Compared with prior art, the present invention has following beneficial effect:
One, material therefor of the present invention is all stock with silicon, and be therefore easy to compatible with existing silicon microelectronics standard technology, and preparation process is simple, cost is low.Further, owing to having the micro-structural of nanoscale, this device is made to have the feature of higher responsiveness and near infrared spectrum response.And nanoimprint lithography has good uniformity and repeatability, has advantage in large-scale production;
Two, there is due to nano-micro structure silicon the existence in the guard ring district of the features such as wide spectral absorption and antiradar reflectivity and detector uniqueness; make this New Si-PIN photoelectric detector have the feature of near infrared spectrum extension and higher responsiveness, responsiveness and the quantum efficiency of device can be improved especially in 700nm ~ 1200nm wave-length coverage.
Accompanying drawing explanation
Fig. 1 is cross-sectional view of the present invention;
Fig. 2 is bottom plan structural representation of the present invention;
Reference numeral is: 1 be I type Si substrate, 2 be boron diffusing, doping P district, 3 be boron heavy diffusing, doping P+ district, 4 be nano-micro structure silicon layer N district, 5 be upper end electrode, 6 for lower end electrode.
Embodiment
Below in conjunction with the drawings and the specific embodiments, the invention will be further described.
A kind of back-illuminated type Si-PIN photodetector, as shown in Figure 1, 2, comprises I type substrate 1, is arranged on the P district 2 of I type substrate 1 overcentre, to be located at above I type substrate 1 both sides and the P be close to P district
+district 3, be positioned at I type substrate back N-type nano-micro structure silicon layer 4, be positioned at p type island region 2 and P
+the upper end electrode 5 of district 3 upper surface and be positioned at the lower end electrode 6 of N-type nano-micro structure silicon layer 4 times both sides.
Described N-type nano-micro structure silicon layer is the laminar microstructure in three dimensions array distribution obtained by carrying out nano impression etching or other nanometer etching technology to the heavy diffusing, doping N district of phosphorus.
Described N-type nano-micro structure silicon layer is array arrangement, and its silicon nano-pillar diameter is 50 ~ 100nm, is highly 300 ~ 500nm, and the cycle is 100 ~ 200nm.
Described P+ district 3 is the heavy diffusing, doping p type island region of boron, and its doping content scope is 1 × 10
18ion/cm
3~ 5 × 10
19ion/cm
3.
Described upper end electrode 5 and lower end electrode 6 are metal film electrode, and thickness of electrode is 50nm ~ 150nm, and metal material can be aluminium Al, golden Au or golden evanohm (Au/Cr).
As shown in Figure 1, I type substrate 1, P district 2, P+ district 3, nano-micro structure silicon layer N district 4, upper metal electrode 5 and lower metal electrode 6 is comprised.I type substrate 1 can adopt high resistant Si single-chip; P district 2 can adopt boron diffusing, doping; P+ district 3 can adopt the heavy diffusing, doping of boron; N-type nano-micro structure silicon layer 4 can adopt and in phosphorus diffusing, doping N district, carry out nano impression etching obtain; Upper end electrode 5 can adopt P type ohmic contact; Lower end electrode 6 can adopt N-type ohmic contact.New Si-the PIN photoelectric detector of such making has nano-micro structure silicon layer and guard ring, thus has the characteristic of high-responsivity and the response of near-infrared wide spectral.
Provided by the invention with nano-micro structure silicon back-illuminated type Si-PIN photodetector that is photosensitive layer and preparation method thereof, comprise the steps:
Step 1: the silicon single crystal flake backing material that preparation surface cleans, dry high resistant (resistivity is 1000 Ω cm ~ 2000 Ω cm), crystal orientation are 111;
Step 2: be 350 μm by silicon single crystal flake grinding and polishing to thickness, and at substrate face oxidation growth SiO
2rete, thicknesses of layers is 300nm ~ 400nm, and growth temperature is 1000 DEG C;
Step 3: at SiO
2film surface spin coating last layer photoresist, and utilize mask graph to photoetching offset plate figure, at SiO
2rete makes graphics field, P+ district by lithography to be etched;
Step 4: patterned surf zone is etched, removes not protected SiO
2rete forms P+ district 3 protection zone boron and heavily spreads window;
Step 5: heavily spread window to etching Hou P+ district 3 boron and carry out boron heavy diffusing, doping formation P+ district 3 at 1000 DEG C ~ 1100 DEG C, diffusion concentration scope is 1 × 10
18ion/cm
3~ 5 × 10
19ion/cm
3, junction depth is 1.0 μm ~ 3.5 μm, then removes photomask surface glue;
Step 6: at SiO
2film surface spin coating last layer photoresist, and utilize mask graph to photoetching offset plate figure, at SiO
2rete makes graphics field, P district 2 by lithography to be etched;
Step 7: patterned surf zone is etched, removes not protected SiO
2rete forms P district 2 boron diffusion window;
Step 8: carry out boron diffusing, doping to P district 2 boron diffusion window and form P district 2 at 1000 DEG C, junction depth is 0.2 μm ~ 3.0 μm, then removes photomask surface glue;
Step 9: positive glue is coated with to substrate face, and thinning, grinding, the polished substrate back side, make substrate thickness down be 100 μm ~ 200 μm, and carry out the heavy diffusing, doping of phosphorus and form N district, junction depth is about 3 μm ~ 4 μm, then removes the positive glue in front;
Step 10: utilize acetone, ethanol clean the silicon substrate after the heavy diffusing, doping of phosphorus and dry successively;
Step 11: be coated with last layer thin layer thermoplastic shape macromolecular material (as PMMA) on substrate;
Step 12: heat up and reach the vitrification point T of this thermoplastic
gon, utilize nano-imprint stamp to carry out mold pressing to thermoplastic material;
Step 13: reduce temperature and make thermoplastic material cures, remove impression block subsequently;
Step 14: the method adopting deep trouth reactive ion etching, with the thermoplastic after above-mentioned solidification for mask, carries out anisotropic etching to the silicon materials substrate below it, obtains corresponding figure, thus forms N-type nano-micro structure silicon layer.
Step 15: at P district and P+ district surface deposition metallic diaphragm, forms upper end electrode;
Step 16: at N-type nano-micro structure silicon-containing layer deposition metallic diaphragm;
Step 17: spin coating one deck photoresist on silicon substrate back metal thin layer, and utilize mask pattern to photoetching offset plate figure;
Step 18: etch patterned region, removes silicon substrate back side excess metal rete, and removes residue photoresist, thus forms lower end electrode.
Wherein, in the preparation in nano-micro structure silicon layer N district 4, nano-micro structure silicon is array arrangement, and its typical sizes (silicon nano-pillar diameter) is 50 ~ 100nm, and be highly 300 ~ 500nm, the cycle is 100 ~ 200nm.Metal electrode alternate material has aluminium Al, golden Au, chromium/golden Cr/Au; Metal deposition can be LPCVD, MOCVD, magnetron sputtering; Metal electrode thickness is 50nm ~ 150nm.
The response wave length scope of the back-illuminated type Si-PIN photodetector that this kind is photosensitive layer with nano-micro structure silicon is for 400nm ~ 1200nm, and responsiveness scope is 0.5A/W ~ 10A/W.
Below be only the representative embodiment in the numerous embody rule scope of the present invention, protection scope of the present invention is not constituted any limitation.All technical schemes adopting conversion or equivalence to replace and formed, all drop within rights protection scope of the present invention.
Claims (3)
1. the preparation method of a back-illuminated type Si-PIN photodetector, back-illuminated type Si-PIN photodetector comprises I type substrate (1), be arranged on the P district (2) of I type substrate (1) overcentre, to be located at above I type substrate (1) both sides and the P+ district (3) be close to P district, be positioned at the N-type nano-micro structure silicon layer (4) of I type substrate back, be positioned at upper end electrode (5) and the lower end electrode (6) of both sides under being positioned at N-type nano-micro structure silicon layer (4) of p type island region (2) and P+ district (3) upper surface, described N-type nano-micro structure silicon layer is the laminar microstructure in three dimensions array distribution obtained by carrying out nano impression etching to the heavy diffusing, doping N district of phosphorus, it is characterized in that: preparation method comprises the steps:
Step 1: preparation surface cleans, dry high resistant, the silicon single crystal flake backing material that resistivity is 1000 Ω cm ~ 2000 Ω cm, crystal orientation is 111, I type substrate (1);
Step 2: be 350 μm by silicon single crystal flake grinding and polishing to thickness, and at substrate face oxidation growth SiO2 rete, thicknesses of layers is 300nm ~ 400nm, growth temperature is 1000 DEG C;
Step 3: at SiO2 film surface spin coating last layer photoresist, and utilize mask graph to photoetching offset plate figure, SiO2 rete makes graphics field, P+ district to be etched by lithography;
Step 4: etch patterned surf zone, removes not protected SiO2 rete and forms P+ district (3) protection zone boron and heavily spread window;
Step 5: heavily spread window to etching Hou P+ district (3) boron and carry out heavy diffusing, doping formation P+ district (3) of boron at 1000 DEG C ~ 1100 DEG C, diffusion concentration scope is 1 × 10
18ion/cm
3~ 5 × 10
19ion/cm
3junction depth is 1.0 μm ~ 3.5 μm, then removes photomask surface glue;
Step 6: at SiO2 film surface spin coating last layer photoresist, and utilize mask graph to photoetching offset plate figure, SiO2 rete makes P district (2) graphics field to be etched by lithography;
Step 7: etch patterned surf zone, removes not protected SiO2 rete and forms P district (2) boron diffusion window;
Step 8: carry out boron diffusing, doping to P district (2) boron diffusion window and form P district (2) at 1000 DEG C, junction depth is 0.2 μm ~ 3.0 μm, then removes photomask surface glue;
Step 9: positive glue is coated with to substrate face, and thinning, grinding, the polished substrate back side, make substrate thickness down be 100 μm ~ 200 μm, and carry out the heavy diffusing, doping of phosphorus and form N district, junction depth is about 3 μm ~ 4 μm, then removes the positive glue in front;
Step 10: utilize acetone, ethanol clean the silicon substrate after the heavy diffusing, doping of phosphorus and dry successively;
Step 11: be coated with last layer thin layer thermoplastic shape macromolecular material on substrate;
Step 12: heat up and on the vitrification point Tg reaching this thermoplastic, utilize nano-imprint stamp to carry out mold pressing to thermoplastic material;
Step 13: reduce temperature and make thermoplastic material cures, remove impression block subsequently;
Step 14: the method adopting deep trouth reactive ion etching, with the thermoplastic after above-mentioned solidification for mask, carries out anisotropic etching to the silicon materials substrate below it, obtains corresponding figure, thus forms N-type nano-micro structure silicon layer;
Step 15: at P district and P+ district surface deposition metallic diaphragm, forms upper end electrode;
Step 16: at N-type nano-micro structure silicon-containing layer deposition metallic diaphragm;
Step 17: spin coating one deck photoresist on silicon substrate back metal thin layer, and utilize mask pattern to photoetching offset plate figure;
Step 18: etch patterned region, removes silicon substrate back side excess metal rete, and removes residue photoresist, thus forms lower end electrode.
2. the preparation method of a kind of back-illuminated type Si-PIN photodetector according to claim 1, it is characterized in that, described N-type nano-micro structure silicon layer is array arrangement, and its silicon nano-pillar diameter is 50 ~ 100nm, be highly 300 ~ 500nm, the cycle is 100 ~ 200nm.
3. the preparation method of a kind of back-illuminated type Si-PIN photodetector according to claim 1, it is characterized in that, described upper end electrode and lower end electrode are metal film electrode, and thickness of electrode is 50nm ~ 150nm, and metal material is aluminium Al, golden Au or golden evanohm Au/Cr.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103956403B (en) * | 2014-04-03 | 2017-02-15 | 苏州北鹏光电科技有限公司 | Photoelectric detector manufacturing method and manufactured wide-angle photoelectric detector |
| CN104064610B (en) * | 2014-07-03 | 2017-02-22 | 电子科技大学 | Right side illuminated Si-PIN photoelectric detector taking micro-nano structural silicone as light-sensitive layer and preparation method thereof |
| CN104064611B (en) * | 2014-07-03 | 2016-09-14 | 电子科技大学 | Si-APD photodetector based on micro nano structure and preparation method thereof |
| CN105185845A (en) * | 2015-08-17 | 2015-12-23 | 电子科技大学 | Si-PIN photodetector introducing micro-structure silicon in P layer and N layer and preparation method thereof |
| CN105115599A (en) * | 2015-08-17 | 2015-12-02 | 电子科技大学 | An Si-PIN four-quadrant photoelectric detector based on MEMS microstructure silicon and a manufacturing method thereof |
| CN106328753A (en) * | 2016-08-26 | 2017-01-11 | 电子科技大学 | MEMS microstructure-based infrared-strengthened Si-PIN detector and preparation method thereof |
| CN112117336B (en) * | 2020-09-22 | 2022-04-12 | 厦门大学 | 4H-SiC ultraviolet photoelectric detector array with back-illuminated structure and preparation |
| CN112271229B (en) * | 2020-09-25 | 2023-03-28 | 华东光电集成器件研究所 | Silicon-based back-illuminated PIN device structure |
| CN115425146B (en) * | 2022-09-06 | 2024-02-09 | 西安工业大学 | Backside illuminated microstructure array wide-spectrum imaging detector and preparation method thereof |
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