CN102176470A - Back-illuminated Si-PIN photoelectric detector taking black silicon material as photosensitive layer and manufacturing method thereof - Google Patents

Back-illuminated Si-PIN photoelectric detector taking black silicon material as photosensitive layer and manufacturing method thereof Download PDF

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CN102176470A
CN102176470A CN2011100744732A CN201110074473A CN102176470A CN 102176470 A CN102176470 A CN 102176470A CN 2011100744732 A CN2011100744732 A CN 2011100744732A CN 201110074473 A CN201110074473 A CN 201110074473A CN 102176470 A CN102176470 A CN 102176470A
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CN102176470B (en
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李伟
黄璐
赵国栋
吴志明
蒋亚东
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University of Electronic Science and Technology of China
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Abstract

The invention discloses a back-illuminated Si-PIN photoelectric detector taking a black silicon material as a photosensitive layer and a manufacturing method thereof, belonging to the technical field of photoelectric detection. The photoelectric detector comprises a silicon intrinsic substrate, a P-type area located in the centre of the front surface of the silicon intrinsic substrate, an annular P+ area located around the front surface of the silicon intrinsic substrate, an N-type black silicon layer located on the back surface of the silicon intrinsic substrate, upper electrodes located on the upper surface of the P-type area and the P+ area, and lower electrodes located on the two sides of the lower surface of the N-type black silicon layer. According to the invention, the black silicon material is used as the photosensitive layer, and an annular P+ area 3 is increased around the P-type area 2 so that the back-illuminated Si-PIN photoelectric detector disclosed by the invention can absorb light waves of near-infrared band and has higher light absorptivity and wider response band than a traditional Si photoelectric detector; the manufacturing process is relatively simple and has the characteristics of low cost, fast response speed, high responsiveness and wide response band, is easy to realize integration, and has obvious advantages in large-scale marketization.

Description

A kind of is the back-illuminated type Si-PIN photodetector and preparation method thereof of photosensitive layer with the black silicon material
Technical field
The invention belongs to technical field of photoelectric detection, relate to the photoelectric detector structure, especially a kind of back-illuminated type Si-PIN photodetector and preparation method thereof.
Background technology
Photodetector has all obtained using widely aspect civil and military as the important component part of Fiber Optical Communication System, infrared imaging system, laser warning system and LDMS etc.Present widely used photodetector mainly contains and is used to survey the photodetector and the InGaAs photodetector that is used to survey wavelength 〉=1100nm that wave-length coverage is 400nm～1100nm.Wherein, the Si material because be easy to purify, easily doping, aboundresources, cost are low, be easy to advantages such as extensive integrated and correlation technique maturation, are class materials that is most widely used in the semicon industry.But, because its energy gap big (1.12eV),, still can't reach detection greater than the lightwave signal of 1100nm and with the purpose of signal of telecommunication output even deposited anti-reflection film to improve the responsiveness of detector in Si photodetector photosurface district.Therefore, when needs were surveyed light signal greater than 1100nm, InGaAs photodetector commonly used replaced.But, the InGaAs single-crystal semiconductor material exist again cost an arm and a leg, thermomechanical property is relatively poor, crystal mass is relatively poor and shortcoming such as difficult and existing silicon microelectronic technique compatibility.
Black silicon material is a kind of material layer of silicon face micro-structural, and this material can reach more than 90% the absorptivity of visible light and near infrared light, and the spectral absorption scope has covered near ultraviolet～near infrared band (0.25 μ m～2.5 μ m).The method of this black silicon material of preparation is a lot of again at present, has comprised femtosecond laser method, reactive ion etching method and electrochemical erosion method etc.
Along with the discovery of this black silicon material, the New Si-PIN photodetector that makes development have high-responsivity and wide spectral response becomes possibility.
Summary of the invention
The invention provides a kind of is the back-illuminated type Si-PIN photodetector and preparation method thereof of photosensitive layer with the black silicon material.Described back-illuminated type Si-PIN photodetector is photosensitive layer with the black silicon material, can absorb the near infrared band light wave, have higher absorptivity and wideer response wave band than traditional Si photodetector, and preparation technology is comparatively simple, have cost low, be easy to characteristics integrated, that response speed is fast, responsiveness is high and response wave band is wide, aspect mass marketization, have remarkable advantages.
Technical solution of the present invention is:
A kind of is the back-illuminated type Si-PIN photodetector of photosensitive layer with the black silicon material, as shown in Figure 1, 2, comprises silicon intrinsic substrate 1, is positioned at silicon intrinsic substrate 1 positive central p type island region 2, is positioned at silicon intrinsic substrate 1 positive ring-shaped P all around +District 3, be positioned at silicon intrinsic substrate 1 back side the black silicon layer 4 of N type, be positioned at p type island region 2 and P +Distinguish the top electrode 5 of 3 upper surfaces, and the bottom electrode 6 that is positioned at the black silicon layer 4 lower surface both sides of N type; P wherein +The junction depth in district 3 is greater than the junction depth of p type island region 2.
In the technique scheme:
Described p type island region 2 is boron diffusion doping p type island region, and junction depth is 0.2 μ m～3.0 μ m.
Described P +District 3 is the heavy diffusing, doping p type island region of boron, and junction depth is 1.0 μ m～3.5 μ m, and the doping content scope is 1 * 10 18Ion/cm 3～5 * 10 19Ion/cm 3
The black silicon layer 4 of described N type be silicon intrinsic substrate 1 back side through the heavy diffusing, doping formation of phosphorus N type conduction type, behind chemical corrosion expansion face, carry out Se again or Te ion implantation doping obtains; Wherein Se or Te ion implantation doping concentration range are 1 * 10 14Ion/cm 2～1 * 10 16Ion/cm 2
Described top electrode 3 and bottom electrode 6 are metal film electrode, and metal material can be aluminium (Al), gold (Au) or golden evanohm (Au/Cr).
During device work, being detected light radiation or the various reflector laser that material inspires is absorbed by the photosurface of Si PIN photodetector (being the black silicon layer 4 of N type in the present invention), produce photo-generated carrier, these free charges drift about to the two poles of the earth respectively under External Electrical Field, thereby produce photovoltage or photoelectric current.
Provided by the present invention is the back-illuminated type Si-PIN photodetector of photosensitive layer with the black silicon material, in existing back-illuminated type Si-PIN photodetector, adopted black silicon material as photosensitive layer, because black silicon material is handled through chemical corrosion expansion face, have very big specific area, so absorptivity improve a lot (absorptivity can reach more than 90%); Simultaneously, black silicon material forms N type conduction type through the heavy diffusing, doping of phosphorus, as the N type functional areas of PIN structured light electric explorer; Last Se or Te ion implantation doping help photosensitive layer to absorb the near infrared band light wave, thereby effectively widen the response wave band of photodetector.The present invention compares with existing back-illuminated type Si-PIN photodetector, has increased ring-shaped P+district 3 around the p type island region 2 of device, because the existence in ring-shaped P+district 3, and the light induced electron of generation during the absorbing light photograph rapidly, thus improved the response speed of device greatly.
The present invention is a kind of New Si PIN photodetector structure that novel black silicon material is combined with traditional Si PIN photodetector.Because black silicon material has the existence in the guard ring district (ring-shaped P+district 3) of feature such as wide spectral absorption and antiradar reflectivity and detector uniqueness; make this New Si PIN photodetector have the feature that spectrum extends and have higher responsiveness, can in 700nm～1200nm wave-length coverage, improve the responsiveness and the quantum efficiency of device especially.
Provided by the invention is that the back-illuminated type Si-PIN photodetector material therefor of photosensitive layer all is stock with silicon with the black silicon material, therefore be easy to and existing semiconductor standard processes compatibility, and preparation process is simple, and cost is low.And because the micro-structural of black silicon material and have oxygen group elements and mix makes this device have higher responsiveness and wide spectral response range.
Description of drawings
Fig. 1 be provided by the invention be the cross-sectional view of the back-illuminated type Si-PIN photodetector of photosensitive layer with the black silicon material.
Fig. 2 be provided by the invention with the black silicon material be photosensitive layer back-illuminated type Si-PIN photodetector look up the planar structure schematic diagram.
Fig. 3 be provided by the invention be preparation method's schematic flow sheet of the back-illuminated type Si-PIN photodetector of photosensitive layer with the black silicon material.
Wherein the implication of each Reference numeral is:
The 1st, silicon intrinsic substrate, the 2nd, p type island region, the 3rd, P+ district, the 4th, the N type is deceived silicon layer, the 5th, top electrode, the 6th, bottom electrode.
Embodiment
Below in conjunction with drawings and Examples specific implementation method of the present invention is further described.
A kind of is the back-illuminated type Si-PIN photodetector of photosensitive layer with the black silicon material, as shown in Figure 1, 2, comprises silicon intrinsic substrate 1, is positioned at silicon intrinsic substrate 1 positive central p type island region 2, is positioned at silicon intrinsic substrate 1 positive ring-shaped P all around +District 3, be positioned at silicon intrinsic substrate 1 back side the black silicon layer 4 of N type, be positioned at p type island region 2 and P +Distinguish the top electrode 5 of 3 upper surfaces, and the bottom electrode 6 that is positioned at the black silicon layer 4 lower surface both sides of N type; P wherein +The junction depth in district 3 is greater than the junction depth of p type island region 2.
In the technique scheme:
Described p type island region 2 is boron diffusion doping p type island region, and junction depth is 0.2 μ m～3.0 μ m.
Described P +District 3 is the heavy diffusing, doping p type island region of boron, and junction depth is 1.0 μ m～3.5 μ m, and the doping content scope is 1 * 10 18Ion/cm 3～5 * 10 19Ion/cm 3
The black silicon layer 4 of described N type be silicon intrinsic substrate 1 back side through the heavy diffusing, doping formation of phosphorus N type conduction type, behind chemical corrosion expansion face, carry out Se again or Te ion implantation doping obtains; Wherein Se or Te ion implantation doping concentration range are 1 * 10 14Ion/cm 2～1 * 10 16Ion/cm 2
Described top electrode 3 and bottom electrode 6 are metal film electrode, and metal material can be aluminium (Al), gold (Au) or golden evanohm (Au/Cr).
A kind of is the preparation method of the back-illuminated type Si-PIN photodetector of photosensitive layer with the black silicon material, as shown in Figure 3, may further comprise the steps:
Step 1: at intrinsic silicon substrate 1 surface oxidation growth SiO 2Rete.Used intrinsic silicon substrate is the high resistant monocrystalline substrate in (111) crystal orientation, and resistivity is 1000 Ω cm～2000 Ω cm; SiO 2Thicknesses of layers is 300nm～400nm, and growth temperature is 1000 ℃.
Step 2: at SiO 2Make P around the film surface by lithography +The figure in district 3 carries out the heavy diffusing, doping of boron then and forms P +District 3.The heavy diffusing, doping of boron forms P +Distinguishing 3 o'clock temperature is 1000 ℃～1100 ℃, and the heavy diffusing, doping concentration range of boron is 1 * 10 18Ion/cm 3～5 * 10 19Ion/cm 3, junction depth is 1.0 μ m～3.5 μ m.
Step 3: at SiO 2Film surface makes the figure of p type island region 2 by lithography, carries out the boron diffusion doping then and forms P district 2.Boron diffusion is mixed, and temperature is 1000 ℃ when forming P district 2, and the junction depth in P district 2 is 0.2 μ m～3.0 μ m.
Step 4: attenuate, grinding, polishing are carried out in intrinsic silicon substrate 1 back side, and making intrinsic silicon substrate 1 reduced thickness is 100 μ m～200 μ m, and carries out the heavy diffusing, doping formation of phosphorus N type district, and junction depth is about 3 μ m～4 μ m.
Step 5: the N type district that intrinsic silicon substrate 1 back side is formed carries out the processing of chemical corrosion expansion face.
Step 6: the N type district to intrinsic silicon substrate 1 back side of handling through step 5 carries out ion implantation doping, thereby forms the black silicon layer 4 of N type.
Step 7: electrode preparation.
Step 5 pair N type district carries out chemical corrosion expansion face when handling, and used corrosive liquid is to be that 30% hydrogen peroxide mixes by volume by deionized water, absolute ethyl alcohol, hydrofluoric acid, gold chloride and concentration.Wherein, to account for corrosive liquid total volume percent scope be 9%～15% to absolute ethyl alcohol consumption volume; It is 9%～15% that the hydrofluoric acid volume accounts for corrosive liquid total volume percent scope; It is 4%～7% that the gold chloride volume accounts for corrosive liquid total volume percent scope; Concentration be 30% hydrogen peroxide volume to account for corrosive liquid total volume percent scope be 50%～60%, all the other are deionized water.
When step 6 pair was carried out ion implantation doping through the N type district at intrinsic silicon substrate 1 back side that step 5 is handled, doped chemical was selenium (Se) or tellurium (Te), and the doping content scope is 1 * 10 14Ion/cm 2～1 * 10 16Ion/cm 2
What prepare through above-mentioned steps is the back-illuminated type Si-PIN photodetector of photosensitive layer with the black silicon material, and after tested, its response wave length scope is 400nm～1200nm, and the responsiveness scope is 0.5A/W～30A/W.
Below only be the representative embodiment in the numerous concrete ranges of application of the present invention, protection scope of the present invention is not constituted any limitation.All employing conversion or equivalence are replaced and the technical scheme of formation, all drop within the rights protection scope of the present invention.

Claims (9)

1. one kind is the back-illuminated type Si-PIN photodetector of photosensitive layer with the black silicon material, comprises silicon intrinsic substrate (1), is positioned at the positive central p type island region (2) of silicon intrinsic substrate (1), is positioned at the positive ring-shaped P all around of silicon intrinsic substrate (1) +District (3), be positioned at silicon intrinsic substrate (1) back side the black silicon layer (4) of N type, be positioned at p type island region (2) and P +The top electrode (5) of district's (3) upper surface, and the bottom electrode (6) that is positioned at black silicon layer (4) the lower surface both sides of N type; P wherein +The junction depth in district (3) is greater than the junction depth of p type island region (2).
2. according to claim 1 is the back-illuminated type Si-PIN photodetector of photosensitive layer with the black silicon material, it is characterized in that described p type island region (2) is a boron diffusion doping p type island region, and junction depth is 0.2 μ m～3.0 μ m.
3. according to claim 1 is the back-illuminated type Si-PIN photodetector of photosensitive layer with the black silicon material, it is characterized in that described P +District (3) is the heavy diffusing, doping p type island region of boron, and junction depth is 1.0 μ m～3.5 μ m.
4. according to the described back-illuminated type Si-PIN of claim 1 photodetector, it is characterized in that, the black silicon layer (4) of described N type be silicon intrinsic substrate (1) back side through the heavy diffusing, doping formation of phosphorus N type conduction type, behind chemical corrosion expansion face, carry out Se again or Te ion implantation doping obtains; Wherein Se or Te ion implantation doping concentration range are 1 * 10 14Ion/cm 2～1 * 10 16Ion/cm 2
5. according to claim 1 is the back-illuminated type Si-PIN photodetector of photosensitive layer with the black silicon material, it is characterized in that, described top electrode (3) and bottom electrode (6) are metal film electrode, and metal material is aluminium, gold or golden evanohm.
6. one kind is the preparation method of the back-illuminated type Si-PIN photodetector of photosensitive layer with the black silicon material, may further comprise the steps:
Step 1: at intrinsic silicon substrate (1) surface oxidation growth SiO 2Rete;
Step 2: at SiO 2Make P around the film surface by lithography +The figure in district (3) carries out the heavy diffusing, doping of boron then and forms P +District (3);
Step 3: at SiO 2Film surface makes the figure of p type island region (2) by lithography, carries out the boron diffusion doping then and forms P district (2);
Step 4: attenuate, grinding, polishing are carried out in intrinsic silicon substrate (1) back side, and making intrinsic silicon substrate 1 reduced thickness is 100 μ m～200 μ m, and carries out the heavy diffusing, doping formation of phosphorus N type district, and junction depth is about 3 μ m～4 μ m;
Step 5: the N type district that intrinsic silicon substrate (1) back side is formed carries out the processing of chemical corrosion expansion face;
Step 6: the N type district to intrinsic silicon substrate (1) back side of handling through step 5 carries out ion implantation doping, thereby forms the black silicon layer (4) of N type;
Step 7: electrode preparation.
7. according to claim 6 is the preparation method of the back-illuminated type Si-PIN photodetector of photosensitive layer with the black silicon material, it is characterized in that, used intrinsic silicon substrate (1) is the high resistant monocrystalline substrate in (111) crystal orientation, and resistivity is 1000 Ω cm～2000 Ω cm; SiO in the step 1 2Thicknesses of layers is 300nm～400nm, and growth temperature is 1000 ℃; The heavy diffusing, doping of boron forms P in the step 2 +Temperature is 1000 ℃～1100 ℃ during district (3), and the heavy diffusing, doping concentration range of boron is 1 * 10 18Ion/cm 3～5 * 10 19Ion/cm 3, junction depth is 1.0 μ m～3.5 μ m; Boron diffusion is mixed in the step 3, and temperature is 1000 ℃ when forming P district (2), and the junction depth of P district (2) is 0.2 μ m～3.0 μ m.
8. according to claim 6 is the preparation method of the back-illuminated type Si-PIN photodetector of photosensitive layer with the black silicon material, it is characterized in that, step 5 pair N type district carries out chemical corrosion expansion face when handling, and used corrosive liquid is to be that 30% hydrogen peroxide mixes by volume by deionized water, absolute ethyl alcohol, hydrofluoric acid, gold chloride and concentration; Wherein, to account for corrosive liquid total volume percent scope be 9%～15% to absolute ethyl alcohol consumption volume; It is 9%～15% that the hydrofluoric acid volume accounts for corrosive liquid total volume percent scope; It is 4%～7% that the gold chloride volume accounts for corrosive liquid total volume percent scope; Concentration be 30% hydrogen peroxide volume to account for corrosive liquid total volume percent scope be 50%～60%, all the other are deionized water.
9. according to claim 6 is the preparation method of the back-illuminated type Si-PIN photodetector of photosensitive layer with the black silicon material, it is characterized in that, when step 6 pair is carried out ion implantation doping through the N type district at intrinsic silicon substrate (1) back side that step 5 is handled, doped chemical is Se or Te, and the doping content scope is 1 * 10 14Ion/cm 2～1 * 10 16Ion/cm 2
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CN102800717A (en) * 2012-08-30 2012-11-28 中山大学 PIN structural ultraviolet photoelectric detector for avalanche and preparation method thereof
CN103137773A (en) * 2013-03-12 2013-06-05 电子科技大学 Silicon-avalanche photodetector (Si-APD) with black silicon as photosensitive layer and preparation method thereof
CN103367476A (en) * 2012-03-27 2013-10-23 电子科技大学 N + / N type new black-silicon structure and preparation technology
CN103400887A (en) * 2013-08-08 2013-11-20 电子科技大学 Backside illuminated Si-PIN photoelectric detector and preparation method thereof
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WO2020192194A1 (en) * 2019-03-26 2020-10-01 Boe Technology Group Co., Ltd. Pin device and manufacturing method thereof, photosensitive device and display device
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CN107607552A (en) * 2017-09-07 2018-01-19 上海科华光电技术研究所 Back projection type photodetection yarn cleaning device and its ultraviolet enhancement silicon photoelectric diode
CN108321243A (en) * 2018-03-20 2018-07-24 中国科学院微电子研究所 Black silicon nanometer PIN photoelectric detector structure and preparation method thereof
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CN112271229B (en) * 2020-09-25 2023-03-28 华东光电集成器件研究所 Silicon-based back-illuminated PIN device structure
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