CN108321243A - Black silicon nanometer PIN photoelectric detector structure and preparation method thereof - Google Patents
Black silicon nanometer PIN photoelectric detector structure and preparation method thereof Download PDFInfo
- Publication number
- CN108321243A CN108321243A CN201810233541.7A CN201810233541A CN108321243A CN 108321243 A CN108321243 A CN 108321243A CN 201810233541 A CN201810233541 A CN 201810233541A CN 108321243 A CN108321243 A CN 108321243A
- Authority
- CN
- China
- Prior art keywords
- front surface
- black silicon
- type
- photoelectric detector
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 58
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 239000002086 nanomaterial Substances 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 18
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 17
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 33
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 22
- 229910052796 boron Inorganic materials 0.000 claims description 22
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 21
- 229910052698 phosphorus Inorganic materials 0.000 claims description 21
- 239000011574 phosphorus Substances 0.000 claims description 21
- 238000009792 diffusion process Methods 0.000 claims description 15
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 230000003197 catalytic effect Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 5
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 230000003595 spectral effect Effects 0.000 abstract description 9
- 230000015556 catabolic process Effects 0.000 abstract description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 239000004332 silver Substances 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 101710134784 Agnoprotein Proteins 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003129 oil well Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Present disclose provides a kind of black silicon nanometer PIN photoelectric detector structures and preparation method thereof；Wherein, the black silicon nanometer PIN photoelectric detector structure includes successively from top to down：Front surface metal electrode, front surface antireflective coating, front surface silicon oxide film, the heavily doped area of front surface N-type, P-type crystal silicon substrate, the heavily doped area of back surface p-type, back surface metal electrode；Wherein, the heavily doped area of front surface N-type uses black silicon nanostructure.Black silicon nanometer PIN photoelectric detector structure of the disclosure and preparation method thereof, greatly improved the breakdown voltage of detector, is conducive to obtain higher spectral responsivity.
Description
Technical field
This disclosure relates to Si-based photodetectors technical field, and in particular to a kind of black silicon nanometer PIN photoelectric detector knot
Structure and preparation method thereof.
Background technology
No matter semiconductor detector suffers from important irreplaceable role, product dosage pole military or civilian
Greatly, range is extremely wide, only by taking silicon substrate PIN structural photodetector as an example, in Beijing Metro in widely used rays safety detection apparatus
Imaging system is exactly to rely on silicon substrate PIN photoelectric detector, the remote controlers such as refrigerator TV also in family, in hospital in CT equipment at
As system etc..But import is but relied primarily in China's semiconductor detector, either high-end or low-end product, in military affairs
Aspect seriously restricts China's national defense ability, in terms of high-tech development limit China Environment Science exploring ability, civilian
Aspect considerably increases the financial burden of common people.Therefore, it is necessary to carry out the high-performance silicon-based light with independent intellectual property right
Electric explorer.
Silicon substrate PIN photoelectric detector is developed from PN junction photodetector, have work at room temperature, energy resolution
The features such as rate is high, pulse rise time is short, detection efficient is high and performance stablizes, at present in medical CT, luggage security check, collection
The fields such as vanning inspection, large industry equipment nondestructive inspection, oil well logging, radioactivity prospecting, environmental monitoring and infrared touch panel
All play irreplaceable role.For the demand of different application field difference detecting band, need to improve silicon substrate PIN photoelectricity
Detector the quantum efficiency of different-waveband or while improving silicon substrate PIN photoelectric detector other parameters ensure device amount
Sub- efficiency.
Invention content
(1) technical problems to be solved
At least partly to solve above-mentioned technical problem, the disclosure provide a kind of black silicon nanometer PIN photoelectric detector structure and
Preparation method, to improve the quantum efficiency and spectral responsivity of detector.
(2) technical solution
According to one aspect of the disclosure, a kind of black silicon nanometer PIN photoelectric detector structure is provided, from top to down successively
Including：Front surface metal electrode, front surface antireflective coating, front surface silicon oxide film, the heavily doped area of front surface N-type, P-type crystal silicon
Substrate, the heavily doped area of back surface p-type, back surface metal electrode；Wherein, the heavily doped area of front surface N-type uses black silicon nanostructure.
In some embodiments, front surface p-type protection ring is formed around the heavily doped area of front surface N-type.
In some embodiments, within the scope of 100~1000nm, diameter exists the nanometer hole depth of the black silicon nanostructure
Within the scope of 200~1000nm.
In some embodiments, the junction depth in the heavily doped area of the N-type is within the scope of 500~2000nm, doping concentration 1 ×
1018cm-3~1 × 1020cm-3In range；The junction depth in the heavily doped area of p-type within the scope of 500~3000nm, doping concentration 1 ×
1018cm-3~1 × 1020cm-3In range.
A kind of preparation method of black silicon nanometer PIN photoelectric detector structure another aspect of the present disclosure provides,
Including：Silicon oxide film is formed in the front surface of P-type silicon substrate and back surface；It is opened on the silicon substrate of covering silicon oxide film
Window carries out boron doping, forms the heavily doped area of back surface p-type；Boron doped silicon substrate front surface windowing is completed, and is being prepared black
Silicon nanostructure；Phosphorus doping is carried out in the region for completing black silicon nanostructure, forms the heavily doped area of front surface N-type；It is mixed completing phosphorus
Miscellaneous silicon substrate front surface forms antireflective coating；And front surface and back surface windowing in silicon substrate, form front surface gold
Belong to electrode and back surface metal electrode, thus completes the preparation of the black silicon nanometer PIN photoelectric detector structure.
In some embodiments, boron doping is carried out in the silicon substrate uplifting window mouth of the covering silicon oxide film, is also formed
Front surface p-type protection ring, the front surface p-type protection ring are formed in around the heavily doped area of front surface N-type.
In some embodiments, the silicon oxide film is prepared using hot oxygen method for oxidation or PECVD methods.
In some embodiments, the boron doping, phosphorus doping are obtained using ion implanting or thermal diffusion method.
In some embodiments, the black silicon nanostructure is using the corrosion of wet method metal catalytic or dry ionic lithographic method
It prepares.
In some embodiments, the antireflective coating is prepared using PECVD methods；The metal electrode uses screen printing
It is prepared by brush, evaporation, sputtering or electro-plating method.
(3) advantageous effect
From the technical solution can be seen that black silicon nanometer PIN photoelectric detector structure of the disclosure and preparation method thereof to
Have the advantages that one of them less：
(1) the black silicon nanometer PIN photoelectric detector structure of the disclosure has front surface protection ring, and detector greatly improved
Breakdown voltage is conducive to obtain higher spectral responsivity.
(2) disclosure sets black silicon nanostructure in Si-based photodetectors incidence surface, can effectively reduce detector 400
The reflectivity of~1000nm wave bands, absorption of the enhancing detector to light, and then effectively improve the spectral responsivity and amount of detector
Sub- efficiency.
(3) technical process of the disclosure is relatively easy, and equipment cost is relatively low, is suitably applied large-scale production.
Description of the drawings
Shown in attached drawing, above and other purpose, the feature and advantage of the disclosure will be more clear.In whole attached drawings
Identical reference numeral indicates identical part, does not press actual size equal proportion scaling deliberately and draws attached drawing, it is preferred that emphasis is shows
Go out the purport of the disclosure.
Fig. 1 is according to the black silicon nanometer PIN photoelectric detector structural schematic diagram of the embodiment of the present disclosure.
Fig. 2 is the preparation method flow chart according to the black silicon nanometer PIN photoelectric detector structure of the embodiment of the present disclosure.
<Symbol description>
100- front surface metal electrodes, 101- front surface antireflective coatings, 102- front surface silicon oxide films, 103- front surfaces
Protection ring, the heavily doped area of 104- front surface N-types, 105-P type crystalline silicon substrates, the heavily doped area of 106- back surface p-types, 107- back surface gold
Belong to electrode.
Specific implementation mode
To make the purpose, technical scheme and advantage of the disclosure be more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.
It should be noted that in attached drawing or specification description, similar or identical part all uses identical figure number.It is attached
The realization method for not being painted or describing in figure is form known to a person of ordinary skill in the art in technical field.In addition, though this
Text can provide the demonstration of the parameter comprising particular value, it is to be understood that parameter is equal to corresponding value without definite, but can connect
The error margin received is similar to be worth accordingly in design constraint.The direction term mentioned in embodiment, for example, "upper", "lower",
"front", "rear", "left", "right" etc. are only the directions of refer to the attached drawing.Therefore, the direction term used is for illustrating not to use
To limit the protection domain of the disclosure.
Present disclose provides a kind of black silicon nanometer PIN photoelectric detector structures, as shown in Figure 1, the black silicon nanometer PIN light
Electric explorer structure includes：It is followed successively by 100 (wherein, front surface metal of front surface metal electrode from top to bottom in light-receiving surface direction
Electrode is metal grid lines), front surface antireflective coating 101 (abbreviation antireflective coating), front surface silicon oxide film 102 (its for oxidation
Silicon layer can grow to be formed by pecvd process), front surface protection ring 103 (its be p-type protection ring), front surface N-type weight
Mix area 104, P-type crystal silicon substrate 105, the heavily doped area 106 of back surface p-type, back surface metal electrode 107.Wherein, the disclosure is in N
The heavily doped area 104 of type is equipped with black silicon nanostructure, effectively increases the spectral response of detector；It is devised around the heavily doped area of N-type
The breakdown reverse voltage of detector greatly improved in protection ring 103.
Specifically, the nanometer hole depth of the black silicon nanostructure is within the scope of 100~1000nm, diameter 200~
Within the scope of 1000nm.
The junction depth in the heavily doped area of N-type is within the scope of 500~2000nm, and doping concentration is 1 × 1018cm-3~1 ×
1020cm-3In range.
The junction depth in the heavily doped area of p-type is within the scope of 500~3000nm, and doping concentration is 1 × 1018cm-3~1 ×
1020cm-3In range.
The thickness of the antireflective coating is within the scope of 50~120nm, and refractive index is in 1.9~2.4 ranges.
The disclosure additionally provides a kind of preparation method of black silicon nanometer PIN photoelectric detector structure, as shown in Fig. 2, described
The preparation method of its black silicon nanometer PIN photoelectric detector structure includes the following steps：
P-type crystal silicon substrate is carried out standard RCA clean by S1；
S2, it is two-sided on the silicon substrate after the cleaning to prepare silicon oxide film；
S3, front surface and back surface output boron diffusion window on the silicon substrate of the covering silicon oxide film, and carry out
Boron doping forms front surface protection ring (namely front surface boron doping protection ring) and the heavily doped areas back surface P+；
S4 outputs phosphorus diffusion window in the boron doped silicon substrate front surface of completion, and prepares black silicon nanostructure；
S5 carries out phosphorus doping in the black silicon nanostructure region, forms the heavily doped areas N+ (namely the black silicon of front surface phosphorus doping
The areas nanometer N+)；
S6, the phosphorosilicate glass (being formed in diffusion process) in removal phosphorus doping region, and in the silicon lining for completing phosphorus doping
Bottom front surface prepares antireflective coating；
S7 then outputs window in silicon substrate front-back, prepares metal electrode.
Specifically, outputing boron diffusion window around back surface and front surface, and boron diffusion is carried out, is formed P++ layers heavily doped；
Then phosphorus diffusion window is outputed in silicon substrate front surface, carries out the preparation of black silicon nanostructure, then carry out phosphorus diffusion, form N+
+ heavily doped layer；Then the phosphorosilicate glass in removal phosphorus diffusion region, and prepare Si3N4Subtract transmitting film；Finally respectively in front surface phosphorus
Diffusion zone and back surface boron diffused region windowing, and complete the preparation of metal electrode.
Specifically, the silicon oxide film is prepared using the methods of hot oxygen method for oxidation, PECVD.
The boron doping is obtained using the methods of ion implanting or thermal diffusion, and the phosphorus doping also uses ion implanting or heat
The methods of diffusion obtains.
The black silicon nanostructure is corroded using wet method metal catalytic or the preparation of the methods of dry ionic etching.
The antireflective coating is prepared using PECVD methods.
The metal electrode is prepared using the methods of silk-screen printing, evaporation, sputtering or plating.Metal electrode material is
One kind in aluminium, gold, silver, chromium, titanium or platinum or in which combination.
In above-mentioned steps S3, the boron doping depth is within the scope of 500~3000nm, and doping concentration is 1 × 1018cm-3
~1 × 1020cm-3In range.
In above-mentioned steps S4, within the scope of 100~1000nm of nanometer hole depth of black silicon nanostructure, diameter 200~
Within the scope of 1000nm.
In above-mentioned steps S5, phosphorus doping junction depth is within the scope of 500~2000nm, and doping concentration is 1 × 1018cm-3~1
×1020cm-3In range.
In above-mentioned steps S6, the thickness of antireflective coating is within the scope of 50~120nm, and refractive index is in 1.9~2.4 ranges
It is interior.
In above-mentioned steps S7, the metal electrode is prepared using the methods of silk-screen printing, evaporation, sputtering or plating；
Metal electrode material is one kind or in which combination in aluminium, gold, silver, chromium, titanium or platinum.
The preparation process of the black silicon nanometer PIN photoelectric detector structure of the disclosure is introduced in further detail below.
First, the RCA for standard being carried out to P-type crystal silicon is cleaned, and removes the organic contaminations and metallic particles of surface of crystalline silicon
Deng.After completing cleaning, silicon oxide film is prepared two-sided, can be grown with PECVD, the method that can also be aoxidized with hot oxygen is given birth to
It is long.Silicon oxide film is both the P-type crystal silicon surface passivation layer and doping blocking layer, after thickness can be according to doping etc.
Continuous process requirements determine.After having grown silicon oxide film, using photoetching technique or other pattern technologies in crystalline silicon substrate
Front surface and back surface output window, then carry out boron doping, form (the also referred to as front surface boron doping protection of front surface protection ring
Ring) and the heavily doped areas back surface P+.Doping depth is within the scope of 500~3000nm, and doping concentration is 1 × 1018cm-3~1 ×
1020cm-3In range, ion implanting may be used in boron doping or the method for diffusion is completed.The boron doping protection ring can be big
Width improves the breakdown voltage of detector, is conducive to obtain higher spectral responsivity.
After completing boron doping, window is outputed in crystalline silicon front surface, carries out the preparation of black silicon nanostructure.Black silicon nano junction
The preparation method of structure have it is several, including dry ionic etching, wet method metal catalytic corrosion etc..By taking metallic silver catalyzed corrosion as an example,
First, silicon chip is implanted into the HF and AgNO of a certain concentration proportioning3In mixed solution, after several seconds, formed on a silicon substrate random
The metal silver nano-grain of distribution.Then the HF and H of a certain concentration proportioning are implanted into2O2In mixed solution, the gold of silicon chip surface
Belong to Argent grain as cathode, silicon as anode, constitutes micro- electrochemical reaction channel in silicon face, quickly carved below metallic
Erosion silicon substrate forms black silicon nano hole structure.The black silicon nanostructure can effectively reduce detector in 400~1000nm waves
The reflectivity of section, absorption of the enhancing detector to probing light, and then effectively improve the spectral responsivity and quantum effect of detector
Rate.
Finally use HNO3Impregnate the metallic silver particles in removal nano-pore.The nanometer hole depth of black silicon nanostructure exists
Within the scope of 100~1000nm, diameter within the scope of 200~1000nm, specific depth and diameter can by follow-up phosphorus doping technique and
Detector optimum reflectivity determines.Although the disclosure prepares black silicon nanostructure as example, simultaneously using metallic silver catalyzed corrosion
The practical range of the disclosure is not limited with this.
Then, phosphorus doping is carried out on black silicon nanostructure, for doping depth within the scope of 500~2000nm, doping is dense
Degree is 1 × 1018cm-3~1 × 1020cm-3In range, ion implanting may be used in phosphorus doping or the method for diffusion is completed.Phosphorus is mixed
Surface phosphorosilicate glass is removed using dilution HF after miscellaneous, then grows antireflective coating in silicon substrate front surface, antireflective coating can
To be MgF2, TiO2Or Si3N4.With Si3N4For, Si is grown using PECVD system3N4Film, by adjusting reaction gas SiH4
And NH3Concentration ratio, the refractive index of antireflective coating is controlled in 1.9~2.4 ranges.The thickness of antireflective coating 50~
Within the scope of 120nm.Although the disclosure using silicon nitride film as example, does not limit the practical range of the disclosure with this.
And then, metal electrode window is outputed on antireflective coating, and removes the Pyrex of silicon substrate back surface, then
Prepare metal electrode.Silk-screen printing, thermal evaporation, electron beam evaporation, magnetron sputtering or electricity may be used in the preparation of metal electrode
It is prepared by the methods of plating.Electrode material is one kind or in which combination in aluminium, gold, silver, chromium, titanium or platinum.
To sum up, compared with traditional silicon substrate PIN photoelectric detector, the black silicon nano photodetectors of the disclosure can not only have
Effect reduces leakage current, increases breakdown reverse voltage, and the reflectivity of short-wave band can be greatly reduced, and solves short-wave band spectral response
Low problem effectively improves the spectral responsivity of detector.This disclosure relates to which the processing step arrived is simple, of low cost.
So far, attached drawing is had been combined the embodiment of the present disclosure is described in detail.According to above description, art technology
Personnel should have the disclosure clear understanding.
It should be noted that in attached drawing or specification text, the realization method for not being painted or describing is affiliated technology
Form known to a person of ordinary skill in the art, is not described in detail in field.In addition, the definition to each element and not only limiting
Various concrete structures, shape or the mode mentioned in embodiment, those of ordinary skill in the art can carry out simply more it
Change or replaces.
Similarly, it should be understood that in order to simplify the disclosure and help to understand one or more of each open aspect,
Above in the description of the exemplary embodiment of the disclosure, each feature of the disclosure is grouped together into single implementation sometimes
In example, figure or descriptions thereof.However, the method for the disclosure should be construed to reflect following intention：It is i.e. claimed
The disclosure require more more than the feature being expressly recited in each claim features.More precisely, as following
As claims reflect, open aspect is all features less than single embodiment disclosed above.Therefore, it abides by
Thus the claims for following specific implementation mode are expressly incorporated in the specific implementation mode, wherein each claim itself
Separate embodiments as the disclosure.
Particular embodiments described above has carried out further in detail the purpose, technical solution and advantageous effect of the disclosure
It describes in detail bright, it should be understood that the foregoing is merely the specific embodiment of the disclosure, is not limited to the disclosure, it is all
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
Claims (10)
1. a kind of black silicon nanometer PIN photoelectric detector structure, includes successively from top to down：Front surface metal electrode, front surface subtract
Reflectance coating, front surface silicon oxide film, the heavily doped area of front surface N-type, P-type crystal silicon substrate, the heavily doped area of back surface p-type, back surface
Metal electrode；Wherein, the heavily doped area of front surface N-type uses black silicon nanostructure.
2. black silicon nanometer PIN photoelectric detector structure according to claim 1, wherein in the heavily doped area of front surface N-type
Around formed front surface p-type protection ring.
3. black silicon nanometer PIN photoelectric detector structure according to claim 1, wherein the black silicon nanostructure is received
Metre hole depth is within the scope of 100~1000nm, and diameter is within the scope of 200~1000nm.
4. black silicon nanometer PIN photoelectric detector structure according to claim 1, wherein the junction depth in the heavily doped area of N-type exists
Within the scope of 500~2000nm, doping concentration is 1 × 1018cm-3~1 × 1020cm-3In range；The junction depth in the heavily doped area of p-type exists
Within the scope of 500~3000nm, doping concentration is 1 × 1018cm-3~1 × 1020cm-3In range.
5. a kind of preparation method of black silicon nanometer PIN photoelectric detector structure, including：
Silicon oxide film is formed in the front surface of P-type silicon substrate and back surface；
Boron doping is carried out in the silicon substrate uplifting window mouth of covering silicon oxide film, forms the heavily doped area of back surface p-type；
Boron doped silicon substrate front surface windowing is completed, and is preparing black silicon nanostructure；
Phosphorus doping is carried out in the region for completing black silicon nanostructure, forms the heavily doped area of front surface N-type；
Antireflective coating is formed in the silicon substrate front surface for completing phosphorus doping；And
In the front surface and back surface windowing of silicon substrate, front surface metal electrode and back surface metal electrode are formed, it is thus complete
At the preparation of the black silicon nanometer PIN photoelectric detector structure.
6. the preparation method of black silicon nanometer PIN photoelectric detector structure according to claim 5, wherein in the covering
The silicon substrate uplifting window mouth of silicon oxide film carries out boron doping, also forms front surface p-type protection ring, the front surface p-type protection
Ring is formed in around the heavily doped area of front surface N-type.
7. the preparation method of black silicon nanometer PIN photoelectric detector structure according to claim 5, wherein the oxidation
Silicon thin film is prepared using hot oxygen method for oxidation or PECVD methods.
8. the preparation method of black silicon nanometer PIN photoelectric detector structure according to claim 5, wherein the boron doping,
Phosphorus doping is obtained using ion implanting or thermal diffusion method.
9. the preparation method of black silicon nanometer PIN photoelectric detector structure according to claim 5, wherein the black silicon is received
Rice structure is corroded using wet method metal catalytic or prepared by dry ionic lithographic method.
10. the preparation method of black silicon nanometer PIN photoelectric detector structure according to claim 5, wherein the antireflective
Film is prepared using PECVD methods；The metal electrode is prepared using silk-screen printing, evaporation, sputtering or electro-plating method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810233541.7A CN108321243B (en) | 2018-03-20 | 2018-03-20 | Black silicon nano PIN photoelectric detector structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810233541.7A CN108321243B (en) | 2018-03-20 | 2018-03-20 | Black silicon nano PIN photoelectric detector structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108321243A true CN108321243A (en) | 2018-07-24 |
| CN108321243B CN108321243B (en) | 2020-07-07 |
Family
ID=62897939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810233541.7A Active CN108321243B (en) | 2018-03-20 | 2018-03-20 | Black silicon nano PIN photoelectric detector structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108321243B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114068753A (en) * | 2021-11-18 | 2022-02-18 | 中北大学 | Black silicon ultraviolet PIN type photoelectric sensor based on micro-nano composite structure |
| US11569406B2 (en) * | 2019-03-26 | 2023-01-31 | Boe Technology Group Co., Ltd. | Pin device and manufacturing method thereof, photosensitive device and display device |
| CN116885029A (en) * | 2023-09-05 | 2023-10-13 | 北京邮电大学 | High-efficiency PIN photoelectric detector and preparation method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102117850A (en) * | 2010-11-12 | 2011-07-06 | 北京大学 | Solar battery with micro-nano composite structure and production method thereof |
| CN102176470A (en) * | 2011-03-26 | 2011-09-07 | 电子科技大学 | Back-illuminated Si-PIN photoelectric detector taking black silicon material as photosensitive layer and manufacturing method thereof |
| CN102227005A (en) * | 2011-06-10 | 2011-10-26 | 中国科学院半导体研究所 | Method for manufacturing silicon photodetector structure with nanometer points on surface and infrared response function |
| CN102306664A (en) * | 2011-09-07 | 2012-01-04 | 中国科学院微电子研究所 | Solar battery with black silicon structure on emitter and preparation method of solar battery |
| CN103137773A (en) * | 2013-03-12 | 2013-06-05 | 电子科技大学 | Silicon-avalanche photodetector (Si-APD) with black silicon as photosensitive layer and preparation method thereof |
| CN103367519A (en) * | 2013-07-05 | 2013-10-23 | 中国科学院半导体研究所 | Responsivity-adjustable silicon photodetector and manufacturing method thereof |
| CN204991729U (en) * | 2015-08-18 | 2016-01-20 | 广东爱康太阳能科技有限公司 | Black silicon solar cell |
-
2018
- 2018-03-20 CN CN201810233541.7A patent/CN108321243B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102117850A (en) * | 2010-11-12 | 2011-07-06 | 北京大学 | Solar battery with micro-nano composite structure and production method thereof |
| CN102176470A (en) * | 2011-03-26 | 2011-09-07 | 电子科技大学 | Back-illuminated Si-PIN photoelectric detector taking black silicon material as photosensitive layer and manufacturing method thereof |
| CN102227005A (en) * | 2011-06-10 | 2011-10-26 | 中国科学院半导体研究所 | Method for manufacturing silicon photodetector structure with nanometer points on surface and infrared response function |
| CN102306664A (en) * | 2011-09-07 | 2012-01-04 | 中国科学院微电子研究所 | Solar battery with black silicon structure on emitter and preparation method of solar battery |
| CN103137773A (en) * | 2013-03-12 | 2013-06-05 | 电子科技大学 | Silicon-avalanche photodetector (Si-APD) with black silicon as photosensitive layer and preparation method thereof |
| CN103367519A (en) * | 2013-07-05 | 2013-10-23 | 中国科学院半导体研究所 | Responsivity-adjustable silicon photodetector and manufacturing method thereof |
| CN204991729U (en) * | 2015-08-18 | 2016-01-20 | 广东爱康太阳能科技有限公司 | Black silicon solar cell |
Non-Patent Citations (4)
| Title |
|---|
| 傅竹西编著: "《固体光电子学》", 30 June 2012 * |
| 崔三烈编著: "《光纤传感原理与应用技术》", 30 April 1995 * |
| 张国顺等: "《光纤传感技术》", 31 October 1988 * |
| 李少慧等译: "《光纤传感器》", 31 July 1997 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11569406B2 (en) * | 2019-03-26 | 2023-01-31 | Boe Technology Group Co., Ltd. | Pin device and manufacturing method thereof, photosensitive device and display device |
| CN114068753A (en) * | 2021-11-18 | 2022-02-18 | 中北大学 | Black silicon ultraviolet PIN type photoelectric sensor based on micro-nano composite structure |
| CN116885029A (en) * | 2023-09-05 | 2023-10-13 | 北京邮电大学 | High-efficiency PIN photoelectric detector and preparation method thereof |
| CN116885029B (en) * | 2023-09-05 | 2023-11-17 | 北京邮电大学 | High-efficiency PIN photoelectric detector and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108321243B (en) | 2020-07-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Xie et al. | High-performance self-powered UV photodetectors based on TiO2 nano-branched arrays | |
| CN102176470B (en) | Back-illuminated Si-PIN photoelectric detector taking black silicon material as photosensitive layer and manufacturing method thereof | |
| CN108321243A (en) | Black silicon nanometer PIN photoelectric detector structure and preparation method thereof | |
| EP3712968B1 (en) | Solar cell manufacturing method | |
| Kim et al. | Bifacial color realization for a-Si: H solar cells using transparent multilayered electrodes | |
| Xu et al. | Black silicon solar thin-film microcells integrating top nanocone structures for broadband and omnidirectional light-trapping | |
| CN103137773A (en) | Silicon-avalanche photodetector (Si-APD) with black silicon as photosensitive layer and preparation method thereof | |
| CN102169195A (en) | Method for manufacturing nanometer antireflection film or antireflection coating and optical or photoelectric device | |
| WO2020155810A1 (en) | Infrared-transmitting high sensitivity visible light detector and preparation method thereof | |
| CN109037361A (en) | A kind of high efficiency cadmium telluride diaphragm solar battery | |
| Chaoudhary et al. | Laser ablation fabrication of a p-NiO/n-Si heterojunction for broadband and self-powered UV–Visible–NIR photodetection | |
| Wang et al. | Dual-plasmonic Au/graphene/Au-enhanced ultrafast, broadband, self-driven silicon Schottky photodetector | |
| CN102157613A (en) | HLF (high square resistance, low surface reflectance, fine metal contact, HLF) crystalline silicon soar cell and preparation method thereof | |
| Du et al. | Facile fabrication and enhanced photoresponse of CuO/β-Ga2O3 nanostructure photodetector | |
| Yamada et al. | Crystalline silicon photovoltaic cells used for power transmission from solar-pumped lasers: III. Prototype for proof of the light trapping concept | |
| Cui et al. | Developments in the aluminium induced texturing (AIT) glass process | |
| Dhar et al. | Light trapping in a-Si/c-Si heterojunction solar cells by embedded ITO nanoparticles at rear surface | |
| WO2022088204A1 (en) | Ultraviolet-visible-near-infrared silicon-based photodetector and production method therefor | |
| CN110429156B (en) | Si-APD photoelectric detector based on fractal nanowire surface structure and preparation method | |
| Pal et al. | Novel technique for fabrication of n-type crystalline silicon selective emitter for solar cell processing | |
| Kang et al. | Novel application of MgF2 as a back reflector in a-SiOx: H thin-film solar cells | |
| CN105800681A (en) | Preparation method of TiO2 nanoparticles with photonic crystal characteristics | |
| CN204885179U (en) | High -efficient battery of black silicon solar energy of anti LID | |
| Wang et al. | A porous Si-emitter crystalline-Si solar cell with 18.97% efficiency | |
| Suo et al. | Photon-trapping array for enhanced midwave infrared photoresponse |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |