CN103367519A - Responsivity-adjustable silicon photodetector and manufacturing method thereof - Google Patents

Responsivity-adjustable silicon photodetector and manufacturing method thereof Download PDF

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CN103367519A
CN103367519A CN201310280622XA CN201310280622A CN103367519A CN 103367519 A CN103367519 A CN 103367519A CN 201310280622X A CN201310280622X A CN 201310280622XA CN 201310280622 A CN201310280622 A CN 201310280622A CN 103367519 A CN103367519 A CN 103367519A
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silicon
tellurium
layer
photodetector
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黄永光
朱洪亮
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Institute of Semiconductors of CAS
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Abstract

The invention discloses a responsivity-adjustable silicon photodetector and a manufacturing method thereof. The silicon photodetector comprises a p-type silicon substrate layer, n-type tellurium ion implanted layers, a tellurium-oxygen element-codoped silicon nanometer land layer, an antireflection film layer, front contact electrodes, protection ring contact electrodes and a back contact electrode, wherein the n-type tellurium ion implanted layers are formed by performing tellurium ion implantation on the surface of the p-type silicon substrate layer; the tellurium-oxygen element-codoped silicon nanometer land layer is formed by performing oxygen ion implantation on the surfaces of the n-type tellurium ion implanted layers; the antireflection film layer is formed on the surface of the tellurium-oxygen element-codoped silicon nanometer land layer; the front contact electrodes and the protection ring contact electrodes are formed on the surface of the antireflection film layer; and the back contact electrode is formed on the back face of the p-type silicon substrate layer. According to the responsivity-adjustable silicon photodetector and the manufacturing method thereof disclosed by the invention, a deep energy level in silicon and the energy band control function of a nanometer land structure are combined, so that he silicon photodetector has the excellent characteristics that the responsivity is enhanced along with the increase of reverse bias and the infrared expansion of a response band is realized.

Description

Silicon photodetector that a kind of responsiveness is adjustable and preparation method thereof
Technical field
The present invention relates to the photodetector technical field, relate in particular to adjustable silicon photodetector of a kind of responsiveness and preparation method thereof, is to utilize the Ultra-Violet Laser technology to prepare nano particle to realize that responsiveness is adjustable and expand the silicon photodetector of near infrared band response.
Background technology
Silicon-based detector has a wide range of applications, a lot of effort have been done around the performance of further expanding Si detector at present, as to conventional Si detector, on the one hand because the crystalline silicon material energy gap is 1.12ev, can't absorbing wavelength greater than the light of 1.1 mum wavelengths, limited available band and the sensitivity of silicon photoelectric device; On the other hand, although the p-n and the p-i-n type photodetector that utilize common crystalline silicon to make are realized already, but the peak response of this detector is greatly about about 900nm, the responsiveness peak value is also only between 0.5～0.9A/W, the detection of the 850nm wave band in the optical communication can only be suitable for, 1310nm and two important window of 1550nm in the optical communication can't be applied to.And common near infrared detector material is III-V family material, although this material technique in this respect is ripe and realized industrialization, it is expensive, the calorifics mechanical performance is relatively poor, and can not with existing ripe silica-based process compatible.For this reason, the development high-responsivity, the Si detector of expanding infrared response is the focus that people study always, it has application potential in fields such as optical-fibre communications, single photon detections.
For realizing that the regulation and control of silica-based infrared expansion and responsiveness need to be by the band engineering technology, a kind of method is nanostructure, as make nanometer island (nanometer island) or quantum well structure and realize that the infrared expansion of silicon-based detector is an important method, by epitaxy method A.Elfving[1-2] and A.Elfving[3] realize that at silicon substrate GeSi/Si multi-layer quantum trap material developed silicon-based substrate infrared response detector by the control of Ge nanometer island; By pulse laser sediment method, the people such as Liu Dewei [4] have proposed conventional n+p type silicon is carried out the nano surface island Si detector that the development of surface deposition silicon nanoparticle has infrared response under the sulphur based environment; Another kind method, it is the detector of realizing infrared expansion even high-responsivity with the heavy doping change band structure of deep energy level material, it is the method for atmosphere scanning at sulphur that the people [5] such as James E.Carey propose to utilize femtosecond laser, develop the black Si detector of high-responsivity, realized infrared expansion and high-responsivity.Yet the way that light laser ablate to be mixed causes surface damage serious, causes the detector electric leakage serious so that black silicon mobility is low, carrier lifetime is short, heavy doping top layer auger recombination is serious etc.The people such as Wang Xiyuan [6] utilize femtosecond laser to mix and the Si detector that Te mixes has been developed in Ultra-Violet Laser annealing, than conventional Si detector larger improvement is arranged in infrared expansion and high-responsivity, but the improvement amplitude are not very large.
Reference material:
【1】Elfving?A，Hansson?G?V，Ni?W?X.SiGe(Ge-dot)heterojunction?phototransistors?for?efficient?light?detection?at?1.3～1.55μm[J].Physica?E，2003，16：5282532.
【2】Elfving?A，Hansson?G?V，Ni?W?X，et?al.Gate?controlled?Ge/SiGe?QD/QW?photo-MESFETs?for?high?photo-response?at?1.31～1.55μm.IEEELEOS?2004First?International?Conference?on?Group?IV?Photonics.Hongkong，China，2004.)
【3】Elkurdi?M，Boucaud?P，and?Sauvage?S，et?al.Near?infrared?waveguide?photodetector?with?Ge/Si?self?assembled?quantum?dots[J].Appl.Phys.Lett.，2002，80(3)：5092511.
[4] Liu Dewei, Huang Yongguang, Zhu Xiaoning, Wang Xiyuan, Ma Li, Zhu Hongliang has the manufacture method of the nano surface island silicon photodetector of infrared response, Chinese patent, Granted publication day: 2012-07-04, the patent No.: CN102227005B.
【5】James?E.Carey，Catherine?H.Crouch，Mengyan?Shen，and?Eric?Mazur，Visible?and?near-infrared?responsivity?of?femtosecond-laser?microstructured?silicon?photodiodes[J].Optics?Letters，2005，30(14)：1773-1775.
[6] Wang Xiyuan, Huang Yongguang, Liu Dewei, Zhu Xiaoning, Wang Baojun, Zhu Hongliang, femtosecond laser and excimer laser are made tellurium doped silicon detector, Chinese laser, 2013,40 (3): 0302001
Summary of the invention
The technical problem that (one) will solve
In view of this, the high problem of reverse dark current that causes in order to reduce damage that light laser ablate to introduce, take full advantage of again the band engineering function of deep energy level and nanostructure, the present invention proposes adjustable silicon photodetector of a kind of responsiveness and preparation method thereof, the method is utilized the responsiveness that secondary ion injects, the method for double annealing development nanometer island structure strengthens Si detector, by low bias modulation technology, realize simultaneously the infrared expansion of Si detector spectral response range, and greater than the superelevation responsiveness of 1A/W.
(2) technical scheme
For achieving the above object, the invention provides the adjustable silicon photodetector of a kind of responsiveness, this silicon photodetector comprises: p-type silicon-based substrate layer; N-shaped tellurium ion implanted layer forms by carrying out the tellurium Implantation in this p-type silicon-based substrate layer surface; The silicon nanometer island layer of tellurium oxygen element codope forms by carrying out O +ion implanted in this N-shaped tellurium ion implanted layer surface; Antireflective coating, the silicon nanometer island layer that is formed at this tellurium oxygen element codope is surperficial; Front contact electrode and guard ring contact electrode are formed at this antireflective coating surface; And back side contact electrode, be formed at this p-type silicon-based substrate layer back side.
In the such scheme, described p-type silicon-based substrate layer adopts p-type monocrystalline silicon, and thickness is 100 to 500 μ m, and resistivity is 0.1 to 1000 Ω cm.
In the such scheme, in the described N-shaped tellurium ion implanted layer, the implantation concentration of tellurium ion is 10 12～10 16Cm 2, the injection severity control of tellurium ion is between 150-1000nm.
In the such scheme, the silicon nanometer island layer of described tellurium oxygen element codope is that the nanometer island is of a size of 5-100nm, is spaced apart the nano island array of 0.1-20 μ m, and mixed in this nano island array tellurium and oxygen element.
In the such scheme, in the silicon nanometer island layer of described tellurium oxygen element codope, the injection degree of depth of oxonium ion is 10-50nm, and the concentration of oxonium ion is 10 17-10 19Cm -3, so that at this top, PN junction spectral response district formation tellurium oxygen codoped layers.
In the such scheme, wherein this antireflective coating is the antireflecting silicon dioxide film layer.
For achieving the above object, the present invention also provides the manufacture method of the adjustable silicon photodetector of a kind of responsiveness, and the method comprises:
Step 1: in the one side deposit silicon dioxide passivation layer of p-type silicon-based substrate layer;
Step 2: this silicon dioxide passivation layer of photoetching forms the Implantation window, carry out the tellurium Implantation from this Implantation window, under this p-type silicon-based substrate layer surface, form the tellurium ion implanted layer, this tellurium ion implanted layer and p-type silicon-based substrate floor form PN junction spectral response district and guard ring, wherein this guard ring is formed at this periphery, PN junction spectral response district, and tellurium Implantation severity control is between 150-1000nm;
Step 3: this PN junction spectral response district is carried out O +ion implanted, and forming the degree of depth is the O +ion implanted layer of 10-50nm, and the concentration of oxonium ion is 10 in the O +ion implanted layer 17-10 19Cm -3, so that at this top, PN junction spectral response district formation tellurium oxygen codoped layers;
Step 4: adopt this PN junction spectral response district of ultraviolet pulse laser irradiation, control irradiation flux and umber of pulse are so that tellurium oxygen codope district fusing recrystallization, form silicon nanometer island floor on this top, PN junction spectral response district, and the tellurium element implanted layer of this bottom, PN junction spectral response district has also been realized activation when Ultra-Violet Laser irradiation;
Step 5: behind the quasi-molecule laser annealing, be formed with the surface deposition layer of silicon dioxide anti-reflection film of silicon nanometer island layer and guard ring;
Step 6: make front contact electrode and guard ring contact electrode at this antireflecting silicon dioxide film surface applications photoetching method, and make back side contact electrode on p-type silicon-based substrate layer back of the body surface.
In the such scheme, during the Implantation of tellurium described in the step 2, injection face density is 10 12～10 16Cm 2Injection and the contact electrode described in the step 6 of guard ring described in the step 2 are all done circlewise, to guarantee that electrode forms good contacting with implanted layer and implanted layer with substrate; The implanted layer in the district of spectral response described in the step 2 is made toroidal, prevents the edge breakdown of pn knot; The contact electrode on the surface of antireflective coating described in step 5 and the step 6 is done circlewise, to guarantee that electrode forms good contacting with implanted layer.
In the such scheme, ultraviolet pulse laser described in the step 4 is that wavelength is the excimer laser of 248nm, 193nm or 157nm, pulse duration be 1ns to 1000ns, laser flux be controlled at the fusing needed laser flux threshold value 50%～110% scope in; Nanometer island layer described in the step 4 is that tellurium oxygen doped layer fusing recrystallization forms behind the excimer laser irradiation.
In the such scheme, make back side contact electrode on p-type silicon-based substrate layer back of the body surface described in the step 6, the sintering of making in the electrode adopts the comparatively rapid thermal annealing of low temperature, this comparatively the temperature range of low temperature be 400 ℃ to 600 ℃.
(3) beneficial effect
Can find out from technique scheme, the present invention has following beneficial effect:
1, the invention provides the adjustable silicon photodetector of a kind of responsiveness, this silicon photodetector can take full advantage of the deep energy level dopant material to the characteristics of infrared light high-absorbility, simultaneously by nano surface island regulation and control energy band mode, solved traditional Si-based photodetectors to the problem of wavelength more than 1.1 microns without response, Effective Raise the spectral responsivity of silicon photodetector, expanded the silicon materials spectral response range.
2, the invention provides the adjustable silicon photodetector of a kind of responsiveness, be manufactured with the N-shaped guard ring on the p-type silicon-based substrate layer, and the implanted layer of guard ring and contact electrode are all done circlewise, to guarantee that electrode forms good contacting with implanted layer and implanted layer with substrate layer; The implanted layer in spectral response district is made toroidal, prevents the edge breakdown of pn knot; The contact electrode on antireflective coating surface is done circlewise, to guarantee that electrode forms good contacting with implanted layer.
3, the invention provides the manufacture method of the adjustable silicon photodetector of a kind of responsiveness, adopt the mode of Implantation to make tellurium ion implanted layer and p-type silicon-based substrate floor form PN junction spectral response district and guard ring, effectively reduce noise of detector.
4, a kind of nano surface island silicon photodetector with infrared response of the present invention's proposition and preparation method thereof, its technique and standard silicon process compatible are conducive to the integrated of detector and microelectronic component.
Description of drawings
Fig. 1 is the schematic diagram according to the adjustable silicon photodetector of the responsiveness of the embodiment of the invention;
Fig. 2 a to Fig. 2 f is the process flow diagram according to the adjustable silicon photodetector of the making responsiveness of the embodiment of the invention; Reference numeral wherein: 1 is p-type silicon-based substrate layer, and d1 is its thickness; 2 is silicon dioxide passivation layer, and d2 is its thickness; 3 and 4 is N-shaped tellurium ion implanted layer, and d3 is its thickness; 5 is the O +ion implanted layer; 6 is the silicon nanometer island layer of tellurium, oxygen codope; 7 is the antireflecting silicon dioxide film layer; 8 is detector front contact electrode; 9 is the guard ring contact electrode; 10 is detector back side contact electrode.
Fig. 3 is the atomic force microscope figure according to the adjustable silicon photodetector nanometer island structure that tellurium oxygen codoped layers surface forms after Ultra-Violet Laser annealing of the responsiveness of embodiment of the invention making;
The silicon photodetector that the responsiveness that Fig. 4 makes according to the embodiment of the invention is adjustable has the ir-absorbance spectrogram of the silicon materials of tellurium oxygen codoped layers after Ultra-Violet Laser annealing;
The room temperature Photoresponse of the silicon photodetector that the responsiveness that Fig. 5 makes according to the embodiment of the invention is adjustable is with the variation relation figure of adding reverse biased.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The present invention proposes adjustable silicon photodetector of a kind of responsiveness and preparation method thereof, this silicon photodetector combines deep energy level and nanometer island structure band engineering function in the silicon, make the responsiveness of silicon photodetector have with reverse biased strengthen and response wave band to infrared expansion excellent specific property, can take full advantage of the deep energy level dopant material to the characteristics of infrared light high-absorbility, simultaneously by nano surface island regulation and control energy band mode, solved traditional Si-based photodetectors to the problem of wavelength more than 1.1 microns without response, Effective Raise the spectral responsivity of silicon photodetector, expanded the silicon materials spectral response range.
As shown in Figure 1, Fig. 1 is the schematic diagram according to the adjustable silicon photodetector of the responsiveness of the embodiment of the invention, and this silicon photodetector comprises: p-type silicon-based substrate layer; N-shaped tellurium ion implanted layer forms by carrying out the tellurium Implantation in this p-type silicon-based substrate layer surface; The silicon nanometer island layer of tellurium oxygen element codope forms by carrying out O +ion implanted in this N-shaped tellurium ion implanted layer surface; Antireflective coating, the silicon nanometer island layer that is formed at this tellurium oxygen element codope is surperficial; Front contact electrode and guard ring contact electrode are formed at this antireflective coating surface; And back side contact electrode, be formed at this p-type silicon-based substrate layer back side.
Wherein, described p-type silicon-based substrate layer adopts p-type monocrystalline silicon, and thickness is 100 to 500 μ m (preferably 300 μ m), and resistivity is 0.1 to 1000 Ω cm (preferably 10 Ω cm).In the described N-shaped tellurium ion implanted layer, the implantation concentration of tellurium ion is 10 12～10 15Cm 2(preferably 2 * 10 15Cm 2), the injection severity control of tellurium ion is between 150-1000nm (preferably 500nm).The silicon nanometer island layer of described tellurium oxygen element codope is that the nanometer island is of a size of 5-100nm (preferably 10nm), the be spaced apart 0.1-20 μ m nano island array of (preferably 0.5 μ m), and mixed in this nano island array tellurium and oxygen element.In the silicon nanometer island layer of described tellurium oxygen element codope, the injection degree of depth of oxonium ion is 10-50nm (preferably 50nm), and the concentration of oxonium ion is 10 17-10 19Cm -3(preferably 10 19Cm -3), so that at this top, PN junction spectral response district formation tellurium oxygen codoped layers.Wherein this antireflective coating is the antireflecting silicon dioxide film layer.
Elaborate the manufacture method of the adjustable silicon photodetector of a kind of responsiveness provided by the invention below by accompanying drawing 2a to Fig. 2 f, Fig. 2 a to Fig. 2 f is according to the process flow diagram of the adjustable silicon photodetector of the making responsiveness of the embodiment of the invention, may further comprise the steps:
Step 1: (Fig. 2 a) in the one side deposit silicon dioxide passivation layer 2 of p-type silicon-based substrate layer 1, p-type silicon-based substrate material 1 is the monocrystalline silicon of commercial (100) face, two-sided the polishing or twin polishing or single-sided polishing, the thickness d 1 of backing material is 300 μ m, resistivity is 10 Ω .cm.
Step 2: this silicon dioxide passivation layer of photoetching forms the Implantation window; carry out the tellurium Implantation from this Implantation window; under this p-type silicon-based substrate layer surface, form the tellurium ion implanted layer; this tellurium ion implanted layer and p-type silicon-based substrate floor form PN junction spectral response district 4 and guard ring 3 (Fig. 2 b); wherein this guard ring is formed at this periphery, PN junction spectral response district, and tellurium Implantation severity control is between 500nm.
Step 3: this PN junction spectral response district is carried out O +ion implanted, and forming the degree of depth is the O +ion implanted layer 5 (Fig. 2 c) of 50nm, and the concentration of oxonium ion is 10 in the O +ion implanted layer 19Cm -3, so that at this top, PN junction spectral response district formation tellurium oxygen codoped layers.
Step 4: adopt this PN junction spectral response district of ultraviolet pulse laser irradiation, control irradiation flux and umber of pulse are so that tellurium oxygen codope district fusing recrystallization, form silicon nanometer island floor 6 (Fig. 2 d) on this top, PN junction spectral response district, and the tellurium element implanted layer of this bottom, PN junction spectral response district has also been realized activation owing to certain thermal conduction mechanism when Ultra-Violet Laser irradiation.
Step 5: behind the quasi-molecule laser annealing, be formed with the surface deposition layer of silicon dioxide anti-reflection film 7 (Fig. 2 e) of silicon nanometer island layer and guard ring.
Step 6: make front contact electrode 8 and guard ring contact electrode 9 at antireflective coating 7 surface applications photoetching methods, the front contact electrode 8 on anti-reflection film 7 surfaces is done circlewise, to guarantee that electrode forms good contacting with implanted layer; And make back side contact electrode 10 (seeing Fig. 2 f) on p-type silicon-based substrate layer 1 back of the body surface, the sintering of making in the electrode adopts the comparatively rapid thermal annealing of low temperature, this comparatively the temperature range of low temperature be 400 ℃ to 600 ℃; Namely finished the manufacturing process of this nano surface island silicon photodetector.
In the such scheme, the silicon substrate of p-type described in the step 1 thickness d 1 is 300 microns; Silicon dioxide layer thickness d 2 is 100nm; The ion implanted layer of tellurium described in the step 2 depth d 3 is 500nm, and injection face density is 2 * 10 15Cm 2Injection and the contact electrode described in the step 5 of described guard ring are all done circlewise, to guarantee that electrode forms good contacting with implanted layer and implanted layer with substrate; The implanted layer in the district of spectral response described in the step 2 is made toroidal, prevents the edge breakdown of pn knot; Step 5, the contact electrode on the surface of antireflective coating described in 6 is done circlewise, to guarantee that electrode forms good contacting with implanted layer.In the such scheme, ultraviolet pulse laser described in the step 4 is that wavelength is the excimer laser of 248nm, and the pulse duration is 10ns, and laser flux is controlled in the scope of the needed laser flux threshold value 90%～110% of fusing.Nanometer island layer described in the step 4 is that tellurium oxygen doped layer fusing recrystallization forms behind the excimer laser irradiation.
Fig. 3 has provided 2 * 10 15/ cm2 implantation dosage 126It is 0.30J/cm that Te+ Implanted Silicon material is crossed laser flux 21 pulse annealing of 248nm excimer laser after AFM figure, can see that the surface has formed numerous nanometer island structures.And behind the quasi-molecule laser annealing, the absorptivity at infrared band of absorptivity after than original p-type silicon substrate and Implantation has very large lifting as can be seen from Figure 4; Fig. 5 provides the responsiveness characteristic of detector under reverse biased of the method development, and the responsiveness curve when providing the response spectra of commercial Si detector and quantum efficiency and being 100% in the drawings as a comparison, the optical responsivity that can see detector increases along with the increase of reverse biased, and response wave band is to infrared expansion, and responsiveness can be greater than 1A/W under lower bias voltage.Therefore, this detector can be by the control reverse biased, in the scope of special occasions modulator responsiveness.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (10)

1. the silicon photodetector that responsiveness is adjustable is characterized in that, this silicon photodetector comprises:
P-type silicon-based substrate layer;
N-shaped tellurium ion implanted layer forms by carrying out the tellurium Implantation in this p-type silicon-based substrate layer surface;
The silicon nanometer island layer of tellurium oxygen element codope forms by carrying out O +ion implanted in this N-shaped tellurium ion implanted layer surface;
Antireflective coating, the silicon nanometer island layer that is formed at this tellurium oxygen element codope is surperficial;
Front contact electrode and guard ring contact electrode are formed at this antireflective coating surface; And
Back side contact electrode is formed at this p-type silicon-based substrate layer back side.
2. the adjustable silicon photodetector of responsiveness according to claim 1 is characterized in that, described p-type silicon-based substrate layer adopts p-type monocrystalline silicon, and thickness is 100 to 500 μ m, and resistivity is 0.1 to 1000 Ω cm.
3. the adjustable silicon photodetector of responsiveness according to claim 1 is characterized in that, in the described N-shaped tellurium ion implanted layer, the implantation concentration of tellurium ion is 10 12～10 16Cm 2, the injection severity control of tellurium ion is between 150-1000nm.
4. the adjustable silicon photodetector of responsiveness according to claim 1, it is characterized in that, the silicon nanometer island layer of described tellurium oxygen element codope is that the nanometer island is of a size of 5-100nm, be spaced apart the nano island array of 0.1-20 μ m, and mixed in this nano island array tellurium and oxygen element.
5. the adjustable silicon photodetector of responsiveness according to claim 1 is characterized in that, in the silicon nanometer island layer of described tellurium oxygen element codope, the injection degree of depth of oxonium ion is 10-50nm, and the concentration of oxonium ion is 10 17-10 19Cm -3, so that at this top, PN junction spectral response district formation tellurium oxygen codoped layers.
6. the adjustable silicon photodetector of responsiveness according to claim 1 is characterized in that, wherein this antireflective coating is the antireflecting silicon dioxide film layer.
7. the manufacture method of the adjustable silicon photodetector of a responsiveness is characterized in that, the method comprises:
Step 1: in the one side deposit silicon dioxide passivation layer of p-type silicon-based substrate layer;
Step 2: this silicon dioxide passivation layer of photoetching forms the Implantation window, carry out the tellurium Implantation from this Implantation window, under this p-type silicon-based substrate layer surface, form the tellurium ion implanted layer, this tellurium ion implanted layer and p-type silicon-based substrate floor form PN junction spectral response district and guard ring, wherein this guard ring is formed at this periphery, PN junction spectral response district, and tellurium Implantation severity control is between 150-1000nm;
Step 3: this PN junction spectral response district is carried out O +ion implanted, and forming the degree of depth is the O +ion implanted layer of 10-50nm, and the concentration of oxonium ion is 10 in the O +ion implanted layer 17-10 19Cm -3, so that at this top, PN junction spectral response district formation tellurium oxygen codoped layers;
Step 4: adopt this PN junction spectral response district of ultraviolet pulse laser irradiation, control irradiation flux and umber of pulse are so that tellurium oxygen codope district fusing recrystallization, form silicon nanometer island floor on this top, PN junction spectral response district, and the tellurium element implanted layer of this bottom, PN junction spectral response district has also been realized activation when Ultra-Violet Laser irradiation;
Step 5: behind the quasi-molecule laser annealing, be formed with the surface deposition layer of silicon dioxide anti-reflection film of silicon nanometer island layer and guard ring;
Step 6: make front contact electrode and guard ring contact electrode at this antireflecting silicon dioxide film surface applications photoetching method, and make back side contact electrode on p-type silicon-based substrate layer back of the body surface.
8. the manufacture method of the adjustable silicon photodetector of responsiveness according to claim 7 is characterized in that,
During the Implantation of tellurium described in the step 2, injection face density is 10 12～10 16Cm 2
Injection and the contact electrode described in the step 6 of guard ring described in the step 2 are all done circlewise, to guarantee that electrode forms good contacting with implanted layer and implanted layer with substrate;
The implanted layer in the district of spectral response described in the step 2 is made toroidal, prevents the edge breakdown of pn knot;
The contact electrode on the surface of antireflective coating described in step 5 and the step 6 is done circlewise, to guarantee that electrode forms good contacting with implanted layer.
9. the manufacture method of the adjustable silicon photodetector of responsiveness according to claim 7 is characterized in that,
Ultraviolet pulse laser described in the step 4 is that wavelength is the excimer laser of 248nm, 193nm or 157nm, the pulse duration be 1ns to 1000ns, laser flux be controlled at the fusing needed laser flux threshold value 50%～110% scope in;
Nanometer island layer described in the step 4 is that tellurium oxygen doped layer fusing recrystallization forms behind the excimer laser irradiation.
10. the manufacture method of the adjustable silicon photodetector of responsiveness according to claim 7, it is characterized in that, make back side contact electrode on p-type silicon-based substrate layer back of the body surface described in the step 6, the sintering of making in the electrode adopts the comparatively rapid thermal annealing of low temperature, this comparatively the temperature range of low temperature be 400 ℃ to 600 ℃.
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Cited By (3)

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CN103872168A (en) * 2014-03-06 2014-06-18 中国电子科技集团公司第三十八研究所 Photoelectric detector for use in silicon-based photoelectric integrated circuit chip and manufacturing method thereof
CN108321243A (en) * 2018-03-20 2018-07-24 中国科学院微电子研究所 Black silicon nanometer PIN photoelectric detector structure and preparation method thereof
CN112071926A (en) * 2020-08-27 2020-12-11 深圳市奥伦德元器件有限公司 Infrared detector and preparation method thereof

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