CN102227005A - Method for manufacturing silicon photodetector structure with nanometer points on surface and infrared response function - Google Patents
Method for manufacturing silicon photodetector structure with nanometer points on surface and infrared response function Download PDFInfo
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- CN102227005A CN102227005A CN2011101554650A CN201110155465A CN102227005A CN 102227005 A CN102227005 A CN 102227005A CN 2011101554650 A CN2011101554650 A CN 2011101554650A CN 201110155465 A CN201110155465 A CN 201110155465A CN 102227005 A CN102227005 A CN 102227005A
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Abstract
The invention provides a method for manufacturing a silicon photodetector structure with nanometer points on a surface and an infrared response function, comprising the following steps: manufacturing a silicon dioxide masking layer on one face of a p-type silicon-based substrate; carrying out photoetching on the silicon dioxide masking layer to form an annular n-type doped window and a round n-type doped window in the middle of the silicon dioxide masking layer; using a phosphorous ion implantation or phosphorus diffusion method to form n-type doped layers at the annular and round n-type doped windows, wherein the annular n-type doped layer forms a PN-junction protection ring and the round n-type doped layer forms a PN-junction photosensitive area; adopting a method that ultrafast laser pulses are used to radiate an n-type silicon target surface to form a silicon nanometer point layer on a surface of the PN-junction photosensitive area in a sulfur environment; depositing a layer of anti-reflection film on the silicon nanometer layer; carrying out photoetching on the layer of anti-reflection film and forming an annular electrode window on a surface of the layer of anti-reflection film; manufacturing front contact electrodes of the photosensitive area on the annular electrode window; manufacturing front contact electrodes on the protection rings; and manufacturing back contact electrodes on a back surface of the p-type silicon substrate, thus finishing the manufacturing of the silicon photodetector.
Description
Technical field
The present invention relates to structure of a kind of photodetector and preparation method thereof, particularly a kind of manufacture method with nano surface point silicon photodetector structure of infrared response.
Background technology
For common crystalline silicon, on the one hand because its energy gap is 1.12ev, can't absorbing wavelength greater than the light of 1.1 mum wavelengths, limited the available band and the sensitivity of silicon photoelectric device; On the other hand, though the p-n and the p-i-n type photodetector that utilize common crystalline silicon to make are realized already, but the peak response of this detector is greatly about about 900nm, the detection of the 850nm wave band in the optical communication can only be suitable for, 1310nm and two important window of 1550nm in the optical communication can't be applied to.Though and III-V family material technology in this respect is ripe and realized industrialization, it costs an arm and a leg, the calorifics mechanical performance is relatively poor, and can not with existing ripe silica-based process compatible.
Professor Eric Ma Zier of Harvard University in 1998 and his research team utilize superpower femtosecond laser scanning to place the silicon chip surface of sulfur hexafluoride gas, obtained a kind of forest shape micro-structural cone surfacing, it has in the spectral region of 0.25-2.5 μ m＞90% absorptivity, greatly expanded the spectral absorption scope [Appl.Phys.Lett.73,1673 (1998)] of silica-base material.Because this new material has the almost effect of black matrix absorption to sunlight, also be referred to as " black silicon ".Yet, because deficiency such as the mobility of black silicon material is low, carrier lifetime is short, heavy doping top layer auger recombination is serious has greatly restricted the raising of black Si detector infrared spectrum responsiveness.
Summary of the invention
Main purpose of the present invention is to propose a kind of manufacture method with nano surface point silicon photodetector structure of infrared response, to solve the traditional silicon photodetector light of wavelength more than 1.1 microns is not had the difficult problem of response, widen the spectral response range of silicon photodetector.
For achieving the above object, the invention provides a kind of manufacture method with nano surface point silicon photodetector structure of infrared response, this method comprises:
Step 1: the one side in p type silicon-based substrate is made the silicon dioxide masking layer;
Step 2: photoetching silicon dioxide masking layer forms an annular and a circular n type doping window in the middle of the silicon dioxide masking layer;
Step 3: the method in annular and circular n type doping window employing phosphonium ion injection or phosphorous diffusion, form n type doped layer, annular n type doped layer forms the PN junction guard ring, and circular n type doped layer forms the PN junction photosensitive area;
Step 4: under the sulphur based environment, adopt the method on ultrafast laser pulsed irradiation n type silicon target material surface, form the silicon nano dots layer on the surface of circular PN junction photosensitive area;
Step 5: deposit one deck antireflective coating on the silicon nano dots layer;
Step 6: the photoetching antireflective coating forms the annular electrode window on the surface of antireflective coating;
Step 7: preparation front, photosensitive area contact electrode on the annular electrode window;
Step 8: preparation front contact electrode on guard ring;
Step 9: the back side in p type silicon-based substrate prepares back side contact electrode, finishes the making of device.
Wherein said silicon nano dots layer is the silicon materials that are mixed with the sulphur series elements, and its nano surface particle is spaced apart 0.1-20 μ m, and particle scale is 10-100nm.
The silicon materials that wherein are mixed with the sulphur series elements have＞30% absorptivity the light in the 1 μ m-2.5 mum wavelength scope.
Wherein said p type silicon-based substrate adopts p type (100) monocrystalline silicon, and thickness is 100 to 500 μ m, and resistivity is 1 to 1000 Ω cm.
The material of wherein said antireflective coating be silicon dioxide or silicon nitride or and combination, the thickness of wherein said antireflective coating is 100-200nm.
Wherein said silicon dioxide masking layer is the method growth of adopting thermal oxidation or deposit, and the thickness of wherein said silicon dioxide masking layer is 300nm-1 μ m.
Wherein the n type doping depth of PN junction guard ring and PN junction photosensitive area is 0.15 micron to 1 micron, and surface concentration is 10
17To 10
20Cm
3
Sulphur based environment during wherein said ultrafast laser pulsed irradiation is that sulphur is that gas, sulphur are that powder or sulphur are liquid.
Laser pulse during wherein said ultrafast laser pulsed irradiation is nanosecond laser pulses, picosecond laser pulse or femto-second laser pulse.
From technique scheme as can be seen, the present invention has following beneficial effect:
1, this nano surface point silicon photodetector structure of the present invention's proposition with infrared response, this structure can make full use of the characteristics of black silicon material to the infrared light high-absorbility, avoided the weak point of this material simultaneously by the mode of nano surface point, having solved the traditional silicon photodetector does not have the difficult problem of response to the spectrum of wavelength more than 1.1 microns, widen the spectral response range of silicon photodetector, effectively improved the spectral responsivity of silicon photodetector.
2, adopt the mode of phosphonium ion injection or phosphorous diffusion to form n type doped layer, this doped layer and p type silicon-based substrate layer form PN junction photosensitive area and guard ring.Guard ring effectively reduces the detector noise, and circular photosensitive area has effectively prevented the edge breakdown of pn knot.
3, a kind of manufacture method with nano surface point silicon photodetector structure of infrared response of the present invention's proposition, its technology and standard silicon process compatible help the integrated of detector and microelectronic component.
Description of drawings
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail, wherein:
Fig. 1 a-Fig. 1 f is the schematic flow sheet that making provided by the invention has the nano surface point silicon photodetector structure of infrared response;
Fig. 2 is nano surface point silicon photodetector structure (Fig. 1 f) vertical view with infrared response provided by the invention.
Embodiment
See also Fig. 1 to shown in Figure 2, the invention provides a kind of manufacture method with nano surface point silicon photodetector structure of infrared response, this method comprises:
Step 1: make silicon dioxide masking layer 2 in the one side of p type silicon-based substrate 1 and (consult Fig. 1 a);
Wherein, described p type silicon-based substrate 1 adopts p type (100) monocrystalline silicon, and thickness is 100 to 500 μ m, and resistivity is 1 to 1000 Ω cm;
Wherein, described silicon dioxide masking layer 2 is to adopt thermal oxidation or deposition process growth, and the thickness of described silicon dioxide masking layer 2 is 300nm-1 μ m;
Step 2: photoetching silicon dioxide masking layer 2 forms an annular and a circular n type doping window (consulting Fig. 2) in the middle of silicon dioxide masking layer 2;
Step 3: the method in annular and circular n type doping window employing phosphonium ion injection or phosphorous diffusion, form n type doped layer, annular n type doped layer forms PN junction guard ring 3, and circular n type doped layer forms PN junction photosensitive area 4 (consulting Fig. 1 b);
Wherein, the n type doping depth in described PN junction guard ring 3 and PN junction spectral response district 4 is 0.15 micron to 1 micron, and surface concentration is 10
17To 10
20Cm
-3
Wherein, guard ring effectively reduces the detector noise, and circular photosensitive area has effectively prevented the edge breakdown of pn knot;
Step 4: under the sulphur based environment, adopt the method on ultrafast laser pulsed irradiation n type silicon target material surface, form silicon nano dots layer 5 (consulting Fig. 1 c) on the surface of circular PN junction photosensitive area 4;
Wherein, described silicon nano dots layer 5 is for being mixed with the silicon materials of sulphur series elements, and its nano surface particle is spaced apart 0.1-20 μ m, and particle scale is 10-100nm.The described silicon materials that are mixed with the sulphur series elements have＞30% absorptivity the light in the 1 μ m-2.5 mum wavelength scope;
Wherein, the sulphur based environment during described ultrafast laser pulsed irradiation is that sulphur is that gas, sulphur are that powder or sulphur are liquid.Laser pulse during described ultrafast laser pulsed irradiation is nanosecond laser pulses, picosecond laser pulse or femto-second laser pulse;
Step 5: deposit one deck antireflective coating 6 (consulting Fig. 1 d) on silicon nano dots layer 5;
Wherein, the material of described antireflective coating 6 be silicon dioxide or silicon nitride or and combination, the thickness of described antireflective coating 6 is 100-200nm;
Step 6: photoetching antireflective coating 6 forms the annular electrode window on the surface of antireflective coating 6;
Step 7: preparation front, photosensitive area contact electrode 7 (consulting Fig. 1 e) on the annular electrode window;
Step 8: preparation front contact electrode 8 (consulting Fig. 1 e) on guard ring 3;
Step 9: prepare back side contact electrode 9 (consulting Fig. 1 f) at the back side of p type silicon-based substrate 1, finish the making of device.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. manufacture method with nano surface point silicon photodetector structure of infrared response, this method comprises:
Step 1: the one side in p type silicon-based substrate is made the silicon dioxide masking layer;
Step 2: photoetching silicon dioxide masking layer forms an annular and a circular n type doping window in the middle of the silicon dioxide masking layer;
Step 3: the method in annular and circular n type doping window employing phosphonium ion injection or phosphorous diffusion, form n type doped layer, annular n type doped layer forms the PN junction guard ring, and circular n type doped layer forms the PN junction photosensitive area;
Step 4: under the sulphur based environment, adopt the method on ultrafast laser pulsed irradiation n type silicon target material surface, form the silicon nano dots layer on the surface of circular PN junction photosensitive area;
Step 5: deposit one deck antireflective coating on the silicon nano dots layer;
Step 6: the photoetching antireflective coating forms the annular electrode window on the surface of antireflective coating;
Step 7: preparation front, photosensitive area contact electrode on the annular electrode window;
Step 8: preparation front contact electrode on guard ring;
Step 9: the back side in p type silicon-based substrate prepares back side contact electrode, finishes the making of device.
2. the manufacture method with nano surface point silicon photodetector structure of infrared response according to claim 1, wherein said silicon nano dots layer is the silicon materials that are mixed with the sulphur series elements, its nano surface particle is spaced apart 0.1-20 μ m, and particle scale is 10-100nm.
3. the manufacture method with nano surface point silicon photodetector structure of infrared response according to claim 2, the silicon materials that wherein are mixed with the sulphur series elements have＞30% absorptivity the light in the 1 μ m-2.5 mum wavelength scope.
4. the manufacture method with nano surface point silicon photodetector structure of infrared response according to claim 1, wherein said p type silicon-based substrate adopts p type (100) monocrystalline silicon, and thickness is 100 to 500 μ m, and resistivity is 1 to 1000 Ω cm.
5. the manufacture method with nano surface point silicon photodetector structure of infrared response according to claim 1, the material of wherein said antireflective coating be silicon dioxide or silicon nitride or and combination, the thickness of wherein said antireflective coating is 100-200nm.
6. the manufacture method with nano surface point silicon photodetector structure of infrared response according to claim 1, wherein said silicon dioxide masking layer is the method growth of adopting thermal oxidation or deposit, and the thickness of wherein said silicon dioxide masking layer is 300nm-1 μ m.
7. the manufacture method with nano surface point silicon photodetector structure of infrared response according to claim 1, wherein the n type doping depth of PN junction guard ring and PN junction photosensitive area is 0.15 micron to 1 micron, surface concentration is 10
17To 10
20Cm
-3
8. the sulphur based environment the when manufacture method with nano surface point silicon photodetector structure of infrared response according to claim 1, wherein said ultrafast laser pulsed irradiation is that sulphur is that gas, sulphur are that powder or sulphur are liquid.
9. the laser pulse the when manufacture method with nano surface point silicon photodetector structure of infrared response according to claim 8, wherein said ultrafast laser pulsed irradiation is nanosecond laser pulses, picosecond laser pulse or femto-second laser pulse.
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Cited By (8)
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| CN102509728A (en) * | 2011-11-01 | 2012-06-20 | 北京大学 | Design and preparation method of non-refrigeration infrared detector |
| CN102903781A (en) * | 2012-08-28 | 2013-01-30 | 中国科学院半导体研究所 | Silicon-based near infrared photoelectric detector structure and manufacturing method thereof |
| CN103367519A (en) * | 2013-07-05 | 2013-10-23 | 中国科学院半导体研究所 | Responsivity-adjustable silicon photodetector and manufacturing method thereof |
| CN103794674A (en) * | 2014-01-13 | 2014-05-14 | 西安交通大学 | Photoconduction type X-ray detector based on high-resistance ZnO monocrystal and manufacturing method thereof |
| CN108321243A (en) * | 2018-03-20 | 2018-07-24 | 中国科学院微电子研究所 | Black silicon nanometer PIN photoelectric detector structure and preparation method thereof |
| CN108493292A (en) * | 2018-04-12 | 2018-09-04 | 大连理工大学 | A kind of X-ray detector and preparation method thereof based on single-crystal silicon carbide |
| CN109904068A (en) * | 2019-02-19 | 2019-06-18 | 武汉大学 | Infrared absorption doped silicon and preparation method thereof |
| CN111404023A (en) * | 2020-03-25 | 2020-07-10 | 厦门市三安集成电路有限公司 | Laser device and method for manufacturing laser device |
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| CN108321243A (en) * | 2018-03-20 | 2018-07-24 | 中国科学院微电子研究所 | Black silicon nanometer PIN photoelectric detector structure and preparation method thereof |
| CN108493292A (en) * | 2018-04-12 | 2018-09-04 | 大连理工大学 | A kind of X-ray detector and preparation method thereof based on single-crystal silicon carbide |
| CN109904068A (en) * | 2019-02-19 | 2019-06-18 | 武汉大学 | Infrared absorption doped silicon and preparation method thereof |
| CN111404023A (en) * | 2020-03-25 | 2020-07-10 | 厦门市三安集成电路有限公司 | Laser device and method for manufacturing laser device |
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