CN102754215A - Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof - Google Patents
Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Novel methods of producing photovoltaic cells are provided herein, as well as photovoltaic cells produced thereby, and uses thereof. In some embodiments, a method as described herein comprises doping a substrate so as to form a p+ layer on one side and an n+ layer on an another side, applying an antireflective coating on the p+ layer, removing at least a portion of the n+ layer, and then forming a second n+ layer, such that a concentration of the n-dopant in the second n+ layer is variable throughout a surface of the substrate.
Description
Technical field and background technology
The present invention in its some execution modes, relates to power conversion, and more especially, but not exclusively, relate to the photovoltaic cell of the semiconductive substrate that comprises doping, and relate to its production method.
Photovoltaic cell can directly convert light into.People are non-, and can convert daylight into important source that electricity provides regenerative resource the future of being everlasting through photovoltaic cell, thereby can reduce the use of non-renewable energy resources (like fossil fuel).Yet, although the whole world all need not have the regenerative resource of harm to environment, make the high cost of photovoltaic cell, and they convert daylight the limited efficient of electricity into, limited their application so far as the commercial source of electricity.Therefore there is strong demand to producing relatively cheap and having high efficiency photovoltaic cell.
Photovoltaic cell generally includes P-type silicon substrate, and it is entrained on the one side wherein with n-alloy (for example phosphorus), to form n
+Layer, and be entrained on the another side wherein with p-alloy (for example boron), with formation p
+Layer, thus n formed
+-p-p
+Structure.If use n-type silicon substrate, then form n
+-n-p
+Structure.
To electrically contact each face that puts on then.Electrically contact the only long-pending sub-fraction of covering surfaces, pass through to avoid hindering light.Electrically contact typically and apply, to avoid covering too many surface area with comb mesh pattern (grid pattern).The photovoltaic cell of single face has such lattice at a mask of photovoltaic cell, and double side photovoltaic battery all has such pattern on the two sides of photovoltaic cell, and therefore can in any direction collect light.
Can raise the efficiency from reflecting of photovoltaic cell surface through reducing light.The method that realizes this purpose comprises veining (texturing) surface and applies ARC.Titanium dioxide (TiO
2), ZrO
2, Ta
2O
5With silicon nitride be the instance of the ARC that uses in the practice at present.
Equal the 4th photovoltaic energy conversion of IEEE international conference (2006 IEEE 4 that held in Hawaii in 2006 at Kranzel
ThThe illustrative methods of the silicon dioxide/silicon nitride pile system production photovoltaic cell that is utilized on the back side has been described in the article of being submitted to World Conference on Photovoltaic EnergyConversion).
In addition, the trial of raising the efficiency comprises with selective emitter produces photovoltaic cell, wherein n
+Layer more important place is entrained in the zone that electrically contacts the below, to reduce contact resistance.
Deutsche Bundespatent No.102007036921 has described such method, has disclosed a kind of generation and has had n
+-p-p
+The method of the solar cell of structure is wherein used to have the masking layer corresponding to the opening of contact line grid pattern, and is used phosphorus doping, so that the phosphorus concentration below the contact grid is the highest.
United States Patent(USP) No. 6,277,667 disclose a kind of method of making solar cell, wherein utilize silk screen printing to apply the n-dopant source to form n
+The district, and the n-dopant source of use low dosage is to form shallow doped n
+The district.Then electrode is screen-printed to n
+In the district.
United States Patent(USP) No. 5; 871,591 have disclosed phosphorous diffusion is gone in the surface of silicon substrate, with the metallization of the grid of patterning on the surface of Doping Phosphorus; And the surface of this Doping Phosphorus of plasma etching, not being selected property of the material removal of crested so that electrically contact following substrate crested.
Realize n
+Layer electrically contact lower zone more the important place other method of mixing be to use autodoping (self-doping) electrode.
For example, United States Patent(USP) No. 6,180,869 have disclosed the electrode of autodoping silicon, and it is mainly formed by the metal with the alloy fusion.When alloy heats with silicon substrate, alloy is mixed in the silicon of fusing.
Russ P No.2139601 has disclosed and a kind ofly has been applied with borosilicate film (borosilicate film) at its back side and the silicon substrate manufacturing that is applied with phosphosilicate film (phosphosilicatefilm) in its front has n through high-temperature process
+-p-p
+The method of the solar cell of structure.Then silicon layer is removed from the front of substrate and should the front veining an operation, be carried out.Then on the front, form n
+Layer forms contact then.
Other background technology comprises United States Patent(USP) No. 6,825,104, United States Patent(USP) No. 6,552,414, European patent No.1738402 and United States Patent(USP) No. 4,989,059.
Summary of the invention
Aspect according to certain embodiments of the present invention provides the method for producing photovoltaic cell, and this method comprises:
A) with the first surface of n-alloy doping semiconductive substrate, so that in this substrate, form a n
+Layer;
B) with the p-alloy second surface of said semiconductive substrate that mixes, so that in this substrate, form p
+Layer;
C) apply ARC to second surface, this ARC comprises the material that is selected from the group of being made up of silicon nitride and silicon oxynitride;
D) remove a n partly from the first surface of this substrate
+Layer is variable so that stay the concentration of the n-alloy in the first surface of substrate at whole first surface;
E) with the first surface of n-alloy doped substrate, to form the 2nd n
+Layer is so that at the 2nd n
+The concentration of the n-alloy in the layer is variable at whole first surface; And
F) on first surface and second surface, all form and electrically contact,
Produce photovoltaic cell thus,
Wherein, applying ARC to second surface is at a n who removes part from first surface
+Before or after the layer, and with the first surface of n-alloy doped substrate to form the 2nd n
+Carry out before the layer.
Aspect according to certain embodiments of the present invention provides the photovoltaic cell of producing according to method described herein.
Aspect according to certain embodiments of the present invention provides a kind of photovoltaic cell that comprises semiconductive substrate, and this substrate comprises n on its first surface
+Layer also comprises p on its second surface
+Layer, this n
+Layer comprises the n-alloy and this p
+Layer comprises the p-alloy, and second surface scribbles ARC, and this ARC comprises the material that is selected from the group of being made up of silicon nitride and silicon oxynitride, and electrically contacts each that is connected in first surface and the second surface,
Wherein first surface by veining comprising Feng Hegu, and
Wherein at n
+The concentration of n-alloy in the peak of first surface in the layer is higher than the concentration in the paddy of first surface.
Aspect according to certain embodiments of the present invention provides the photovoltaic array that comprises a plurality of photovoltaic cells described herein, and said a plurality of photovoltaic cells are connected to each other.
Aspect according to certain embodiments of the present invention provides the generating equipment that comprises according to photovoltaic array described herein.
Aspect according to certain embodiments of the present invention provides the electronic device that comprises according to photovoltaic cell described herein.
Aspect according to certain embodiments of the present invention provides electromagnetic radiation detector, and this detector comprises photovoltaic cell described herein, and wherein electromagnetic radiation is selected from the group of being made up of ultra-violet radiation, visible radiation and infrared radiation.
According to certain embodiments of the present invention, a n
+Layer is characterised in that it has the sheet resistance less than 30 ohm.
According to certain embodiments of the present invention, a n
+Layer has the degree of depth in the 0.4-2 mu m range.
According to certain embodiments of the present invention, the 2nd n
+Layer is characterised in that gas has the sheet resistance in 30-100 ohm scope.
According to certain embodiments of the present invention, the n of photovoltaic cell
+Layer is characterised in that sheet resistance is in the scope of 30-100 ohm.
According to certain embodiments of the present invention, the 2nd n
+Layer has the degree of depth in the scope of 0.2-0.7 μ m.
According to certain embodiments of the present invention, the n of photovoltaic cell
+Layer has the degree of depth in the scope of 0.2-0.7 μ m.
According to certain embodiments of the present invention, remove a n of part from first surface
+Layer comprises the veining first surface.
According to certain embodiments of the present invention, veining produces peak and paddy in first surface, and the concentration of concentration in the peak of wherein after veining, staying the said n-alloy in the first surface is higher than the concentration in paddy.
According to certain embodiments of the present invention, at the 2nd n
+The concentration of n-alloy in the peak in the layer is higher than the concentration in paddy.
According to certain embodiments of the present invention, the n-alloy is at the 2nd n
+Concentration in the peak of layer is that the n-alloy is at the 2nd n
+At least the twice of the concentration in the paddy of layer.
According to certain embodiments of the present invention, the concentration of n-alloy in the peak of photovoltaic cell is the twice at least of the concentration of n-alloy in the paddy of photovoltaic cell.
According to certain embodiments of the present invention, the n-alloy is at the 2nd n
+Concentration in the peak of layer is at least 5 * 10
20Atom/cm
3
According to certain embodiments of the present invention, the concentration of n-alloy in the peak of photovoltaic cell is at least 5 * 10
20Atom/cm
3
According to certain embodiments of the present invention, the n-alloy is at the 2nd n
+Concentration in the paddy of layer is less than 10
21Atom/cm
3
According to certain embodiments of the present invention, the concentration of n-alloy in the paddy of photovoltaic cell is less than 10
21Atom/cm
3
According to certain embodiments of the present invention, remove the n of part from first surface
+Layer comprises first surface is etched to the mean depth in 4 μ m to 12 mu m ranges.
According to certain embodiments of the present invention, etching is carried out through alkaline solution.
According to certain embodiments of the present invention, a n
+Layer and p
+Layer forms simultaneously.
According to certain embodiments of the present invention, mix to form a n with the n-alloy
+Layer and mixing with formation p with the p-alloy
+Layer is realized through following steps:
The film that (i) will comprise the p-alloy puts on second surface;
The film that (ii) will comprise the n-alloy puts on first surface; And
(iii) heated substrate,
Thereby form a n simultaneously
+Layer and p
+Layer.
According to certain embodiments of the present invention, the film that comprises the film of p-alloy and comprise the n-alloy all comprises silicon dioxide.
According to certain embodiments of the present invention, the film that comprises the p-alloy comprises silicon dioxide.
According to certain embodiments of the present invention, the film that comprises the n-alloy comprises phosphorus pentoxide.
According to certain embodiments of the present invention, the film that comprises the n-alloy comprises the phosphorus pentoxide of at least 20 percentage by weights.
According to some execution modes, this method further comprises makes the coating that applies second surface through heat-treated.
According to some execution modes, this heat treatment increases the refractive index of ARC.
According to some execution modes, this heat treatment makes the refractive index increase at least 0.05 of the ARC of at least a portion.
According to some execution modes, this heat treated first surface of using n-alloy doped substrate simultaneously is to form the 2nd n
+Layer.
According to certain embodiments of the present invention, this method comprises and applies ARC that this ARC is characterised in that it has the refractive index in 2.1 to 2.2 scopes.
According to some execution modes, the ARC on the second surface of photovoltaic cell is characterised in that it has the refractive index in 2.1 to 2.4 scopes.
According to some execution modes, the ARC on the second surface is characterised in that it has the graded index that descends from the interface direction with substrate.
According to certain embodiments of the present invention, this method comprises and applies the ARC with the graded index in 1.7 to 2.25 the scope.
According to certain embodiments of the present invention, the graded index of ARC is in 1.7 to 2.45 scope.
According to some execution modes, the ARC that puts on second surface suppresses to mix through the n-alloy by this coated surface of ARC.
According to certain embodiments of the present invention, this method further comprises subsequently ARC is applied to first surface to form the 2nd n
+Layer.
According to some execution modes, photovoltaic cell further is included in the ARC on the first surface.
According to certain embodiments of the present invention, semiconductive substrate was the n-N-type semiconductor N before said doping.
According to certain embodiments of the present invention, semiconductive substrate was the p-N-type semiconductor N before said doping.
According to certain embodiments of the present invention, semiconductive substrate comprises silicon.
According to certain embodiments of the present invention, the n-alloy comprises phosphorus.
According to certain embodiments of the present invention, the p-alloy comprises boron.
According to certain embodiments of the present invention, photovoltaic cell is characterised in that short-circuit current density is at least 0.033 ampere/cm
2
According to certain embodiments of the present invention, photovoltaic cell is characterised in that fill factor, curve factor is at least 75.5%.
According to certain embodiments of the present invention, photovoltaic cell is characterised in that efficient is at least 16.7%.
According to certain embodiments of the present invention, photovoltaic cell is a double side photovoltaic battery.
According to certain embodiments of the present invention, photovoltaic cell comprises n
+-n-p
+Structure.
According to certain embodiments of the present invention, photovoltaic cell comprises n
+-p-p
+Structure.
Only if in addition definition, employed whole technology of this paper and/or scientific terminology have the identical implication of common sense of the those of ordinary skill in the ability with institute of the present invention subordinate.Although it is hereinafter described illustrative methods and/or material, similar or be equal to method described herein and material and can be used for practice or test execution mode of the present invention.Under the situation that has conflict, present patent application specification (comprising definition) will be controlled.In addition, material, method and instance only are illustrative, rather than the restriction that is intended to necessitate.
Description of drawings
This paper is only with the mode of embodiment and execution modes more of the present invention have been described with reference to the drawings.Now in detail specifically with reference to accompanying drawing, it is emphasized that shown specific implementations is the mode through embodiment and is intended to illustrative discussion the present invention.In this respect, description taken together with the accompanying drawings makes that can how to put into practice execution mode of the present invention is conspicuous to those skilled in the art.
In the accompanying drawings:
Fig. 1 has described to be used for to produce according to certain embodiments of the present invention the sketch map of the illustrative methods of photovoltaic cell;
Fig. 2 has described to be used for to produce according to certain embodiments of the present invention the sketch map of the other illustrative methods of photovoltaic cell;
Fig. 3 illustrates short-circuit current density (J in the photovoltaic cell of producing according to embodiment of the present invention
SC, niA/cm
2) to the dependent curve chart of etch depth (at the micron meter), wherein a n of battery
+The sheet resistance of layer is 13,17 or 25 ohm;
Fig. 4 illustrates according to fill factor, curve factor (FF) in the photovoltaic cell of embodiment of the present invention production the dependent curve chart of etch depth (at the micron meter), wherein a n of battery
+The sheet resistance of layer is 13,17 or 25 ohm;
Fig. 5 illustrates the photovoltaic cell of producing for according to embodiment of the present invention, and efficient is to the dependent curve chart of etch depth (at the micron meter), wherein a n of battery
+The sheet resistance of layer is 13,17 or 25 ohm;
Fig. 6 be illustrated in through boron mix to form (1) after the p+-p-p+ structure, the figure of effective minority carrier (effective minority carrier) life-span (at the microsecond meter) of after the heat treatment of silicon nitride deposition back (2) and wafer, recording in the silicon wafer with p+-p-p+ structure of (3); And
Fig. 7 illustrates the short-circuit current density of silicon photovoltaic cell of calculating (with milliampere/cm
2Meter) as the curve of the refractive index function of the lowermost layer of the 1-layer of photovoltaic cell or 2-layer ARC, this silion cell has maximum internal quantum efficiency in having the medium of 1.45 refractive index in theory.
Embodiment
The present invention in its some execution modes, relates to power conversion, and more especially, but not exclusively, relate to photovoltaic (PV) battery of the semiconductive substrate that comprises doping, and relate to its production method.
In that high efficiency and relatively cheap is used for transform light energy is that inventor of the present invention discloses in the research of photovoltaic cell of electric energy, and the photovoltaic cell of the n-doped layer that to have with the transformable n-alloy of concentration be characteristic shows the efficient of raising.
In addition; Inventor of the present invention imagines; In the one side of passing through with p-alloy doped substrate; Then implement doped substrate when producing photovoltaic cell with n-alloy doping another side, can be through introducing simple, the cheap efficient that is used for increasing photovoltaic cell in the operation that before ARC is put on the p-doping surfaces with n-alloy doping another side.ARC can prevent contacting of n-alloy and p-doping surfaces, thus two types alloy separately advantageously.And, alternatively, can come the antireflection character of optimization coating through the identical heat treatment that is used to introduce the n-alloy, thereby make this method more effective.
The new method that therefore inventor of the present invention designs and successfully implemented to be used to produce photovoltaic cell; This method relates to the operation amount less with data by MoM and MEI; Therefore and cost benefit and the production efficiency brought, cause fault still less during the production routine.This new method further produces the photovoltaic cell with the performance parameter that surpasses many other PV batteries.
Putting into practice when of the present invention, inventor of the present invention has utilized simple relatively, therefore relatively cheap operation, produces to have n
+-p-p
+Structure and at n
+Photoelectricity (PV) battery of the variable concentrations of n-alloy in the layer.Form a n through mixing
+Layer is removed to different extent with its zones of different at photovoltaic cell, then so that the n-alloy that stays exists with variable concentration.Then form the 2nd n through doping
+Layer, and owing to remove a n
+The variable properties of layer, the concentration of n-alloy is at whole the 2nd n
+In the layer is variable.
Under the situation that has no the particular theory restriction, think that the n-alloy is at n
+Variable concentrations in the layer provides the combination of advantage of low concentration of advantage and n-alloy of the high concentration of n-alloy.Therefore; Think that the existence of regional area of random distribution of high concentration reduces the series resistance of photovoltaic cell; Increase the fill factor, curve factor and the efficient of photovoltaic cell thus, and the existence of low concentration region through prevent with highly doped substrate concentration be characteristic short circuit current reduce to increase efficient.
Before illustrated in detail at least a execution mode of the present invention, should understand the present invention and needn't be limited in its specification assembly and/or the structure of method and the details of listing in the description hereinafter and/or in accompanying drawing and/embodiment, explain of arrangement.Other execution modes can be arranged or put into practice in every way or embodiment of the present invention.
With reference now to accompanying drawing,, Fig. 1 shows a kind of illustrative methods that is used for producing according to certain embodiments of the present invention photovoltaic cell.
The film 2 that will contain the p-alloy is coated in semiconductive substrate 1 on a face.Then with the film 3 that contains n-alloy coated substrate 1 on the relative another side with containing p-alloy film 2 of substrate.Induced adulterant is from the diffusion of film (for example through heating), thereby makes the n that wins
+ Layer 4 and p
+Layer 5 forms simultaneously.Then film 2 and 3 is removed.The then surface through etching solution veining substrate 1 forms peak and paddy (except at p at substrate surface
+Layer 5, its anti-veining).The one n
+Layer 4 is only stayed the place, peak of texturizing surfaces.Use back side ARC 6 coated substrate 1 then.Form the 2nd n
+Layer 7 applies with front ARC 8 then.Back side ARC 6 prevents the 2nd n
+Layer 7 and p
+Layer 5 is in edge's contact of substrate 1.Formation electrically contacts 9 on two faces of substrate then, to form photovoltaic cell.
Fig. 2 shows the other illustrative methods that is used for producing according to certain embodiments of the present invention photovoltaic cell.
The film 2 that will contain the p-alloy is coated in semiconductive substrate 1 on one side.Then with the film 3 that contains n-alloy coated substrate 1 on the relative another side with containing p-alloy film 2 of substrate.Induced adulterant is from the diffusion of film (for example through heating), thereby makes the n that wins
+ Layer 4 and p
+Layer 5 forms simultaneously.Then film 2 and 3 is removed.Apply p with back side ARC 6 then
+Layer 5.Then, form peak and paddy (except back side ARC 6, its anti-veining) at substrate surface through the surface of etching solution veining substrate 1.The one n
+Layer 4 is only stayed the place, peak of texturizing surfaces.Form the 2nd n
+Layer 7 applies with front ARC 8 then.Back side ARC 6 prevents the 2nd n
+Layer 7 and p
+Layer 5 is in edge's contact of substrate 1.Formation electrically contacts 9 on two faces of substrate then, to form photovoltaic cell.
The illustrative methods of more than describing has realized the variable concentrations of n-alloy, because the concentration of n-alloy is higher at the place, peak of texturizing surfaces, therefore wherein comes from the 2nd n
+The n-alloy of layer 7 formation be with from a n
+The n-alloy that keeps in the layer 4 exists together.
The illustrative methods of more than describing can not make p yet
+Layer and n
+Overlap between the layer, because forming the 2nd n
+During layer, p
+Layer receives the protection of back side ARC.
In addition, method mentioned above especially advantageously is that they utilize the operation that improves the efficient of photovoltaic cell through number of mechanisms.Therefore, veining is both through reducing because from the reflection of battery surface and the percentage of the light of loss improves the efficient of photovoltaic cell through the variable concentrations that causes the n-alloy.The one n
+The formation of layer and removing not only through promoting to cause the variable concentrations of n-alloy but also through advantageously preventing to increase unfriendly the p of shunting
+The zone is at n
+Formation in the layer is raised the efficiency.Back side ARC reduces reflection and is forming the 2nd n
+Protection p during layer
+Layer.
Therefore, these methods do not need too much program, and in fact produce the PV battery than routine and relate to program still less, and are included in that the program neither one is complicated especially in these methods.Therefore, it is simple relatively and cheap carrying out this method.The quantity of program reduces the chance that makes defective form and reduces, thereby makes entire method more effective.
The short-circuit current density (for example on average less than about 4 μ m) when veining is more shallow relatively that Fig. 3 shows the photovoltaic cell that when etching, prepares according to the embodiment of the present invention reduces.The fill factor, curve factor (for example on average more than about 12 μ m) when veining is relatively dark that Fig. 4 shows the photovoltaic cell that when etching, prepares according to method described herein reduces.The efficient (the for example about 4-12 μ of average out to m) with the intermediate depth veining time that Fig. 5 shows the photovoltaic cell that when etching, prepares according to method described herein is maximum.
Under not by the situation of any special one theory, it is believed that, owing to do not remove enough n
+The n-alloy of layer, therefore more shallow veining can't make the n-alloy have the variable concentrations of expectation, and owing to has in fact removed a n
+All n-alloys of layer, darker etching can not make the n-alloy have variable concentrations yet relatively.Therefore, we think that the etched intermediate means degree of depth is best for the variable concentrations that produces the n-alloy, have darker relatively etched zone (paddy) and have more shallow etched zone (peak) relatively because the intermediate means degree of depth comprises.
Illustrative methods described above also forms unsymmetric structure, and wherein one side is veining, and another side is level and smooth (non-veining).Under not by the situation of any special one theory; Think that such structure is favourable when radiation is incident on the texturizing surfaces; Because texturizing surfaces reduces reflection; Level and smooth non-texturizing surfaces then strengthens the internal reflection of the long wavelength radiation that arrives cell backside, and long wavelength radiation is increased the contribution that produces electric current.In addition, level and smooth p
+The active surface compound (surface recombination) on surface is lower than texturizing surfaces, makes that the loss of efficient is lower.
Yet, think that further the level and smooth back side is disadvantageous for double side photovoltaic battery, because when being illuminated at the back side of battery, the higher relatively reflection at the back side can lower efficiency.Therefore, advantageously be provided for effective ARC at the back side.
Like what describe among this paper, can silicon nitride and/or silicon oxynitride be deposited on the substrate, have the coating of controllable refractive index with formation.As shown in Figure 7, high index of refraction (for example 2.3 or higher) has improved the validity of ARC.Yet the characteristic with the silicon nitride layer that surpasses 2.2 refractive index is that its light absorption the short wavelength increases [Opto-Electronics Rev.2004,12:41-44], and this characteristic can reduce the efficient of photovoltaic cell.Therefore, advantageously deposition has the coating (for example in 2.1 to 2.2 scope) less than 2.2 refractive index, and the antireflection character of the coating of even now is not optimum.
Under not by the situation of any special one theory; Think the heat treatment of antagonistic reflex coating described herein; Under the situation of not sacrificing low absorption (it is a characteristic with the coating with low index of refraction), increase to more excellent level and overcome problem described above at least in part through refractive index with ARC in the shortwave strong point.
In addition, inventor of the present invention has disclosed, and the heat treatment of silicon nitride and/or silicon oxynitride coating keeps the surface recombination of reduced levels, and is as shown in the figure 6, increases the efficient of photovoltaic cell thus.Therefore, should be understood that the ARC that applies according to execution mode described herein can be through must relevant mechanism not increasing efficient with the minimizing reflection.
Under not by the situation of any special one theory, think that deposited silicon nitride increases p owing to introducing electric charge and/or hydrogen atom from the teeth outwards
+The level that laminar surface is compound, and such electric charge and/or hydrogen atom are eliminated in heat treatment, reduce the level of surface recombination thus.
Therefore, aspect according to certain embodiments of the present invention provides the method for producing photovoltaic cell, and this method comprises:
A) with the first surface of n-alloy doping semiconductive substrate, in substrate, to form a n
+Layer;
B) with the mix second surface of this semiconductive substrate of p-alloy, in substrate, to form p
+Layer;
C) ARC (for example comprising silicon nitride and/or silicon oxynitride) is put on second surface;
D) remove a n partly from the first surface of substrate
+Layer is variable so that stay the concentration of the n-alloy in the first surface of substrate at whole first surface;
E) with the first surface of n-alloy doped substrate, to form the 2nd n
+Layer is so that at the 2nd n
+The concentration of the n-alloy in the layer is variable at whole first surface; And
F) on first surface and second surface, all form and electrically contact.
(step c) can be at a n who removes part to apply ARC
+Layer (carries out before or after the step d), but under any circumstance all is to form the 2nd n at the doping first surface
+Layer (carries out before the step e).Like what discuss among this paper, when the diffusion of the anti-at least to a certain extent n-alloy of ARC, apply ARC like this and can be used to prevent at p
+Layer and the 2nd n
+The layer between overlapping.
Therefore, in some embodiments, the ARC of second surface is impermeable for n-alloy (for example phosphorus) at least to a certain extent, gets into the p-doped region on second surface so that this coating suppresses the n-alloy.Alternatively, this coating make to get into the n-alloy that scribbles this coating area and is reduced by at least 99%, and alternatively at least 99.9%, and alternatively at least 99.99%.Alternatively, this coating is impermeable fully for the n-alloy.
ARC can be by for well known to a person skilled in the art that any suitable method (for example chemical vapour deposition (CVD) or plasma enhanced chemical vapor deposition) forms.
As embodiment hereinafter part name for example, the ARC that comprises silicon nitride and/or silicon oxynitride is particularly useful for increasing according to operation described herein the efficient of photovoltaic cell.Yet, also consider to apply and comprise other suitable materials (TiO for example according to operation described herein
2, ZrO
2, Ta
2O
5) ARC.
ARC can comprise one or more layers.When existing more than a layer, the for example refractive index (for example the upper strata has the refractive index lower than lower floor) of different layers and/or form (for example one deck comprise silicon oxynitride and other layer comprises silicon nitride) can be different.
According to some execution modes, this method further comprises makes ARC through heat-treated (for example heating), for example, increases the heat treatment of the refractive index of ARC.Therefore; For example, the refractive index of silicon nitride (the exemplary composition of ARC) increases [Winderbaum et al. " INDUSTRIAL PECVD SILICON NITRIDE:SURFACE AND BULK PASSIVATION OF SILICON WAFERS ", 19th European PVSEC through heat treatment; Paris; France, 2004,576-579].Alternatively; Heat treatment makes at least part (lowermost portion for example; It is near silicon substrate) the refractive index increase at least 0.05 (for example from being increased at least 2.25 below 2.2) of ARC; Increase by at least 0.1 (for example from being increased at least 2.3 below 2.2) alternatively, and increase by at least 0.15 (for example from being increased at least 2.35 below 2.2) alternatively.
Heat treatment can be used for doped substrate, for example, and through heated substrate under the situation that comprises the material of alloy (for example gas, pastel) existence.
Therefore, in some embodiments, heat treatment (for example in the temperature range of 800 ° of C to 900 ° of C, 10 to 30 minutes) with the n-alloy simultaneously the first surface of doped substrate to form this paper the 2nd n recited above
+Layer.Such execution mode advantageously allows the heat treatment of antagonistic reflex coating under the situation that does not increase the quantity of producing the related operation of photovoltaic cell.Occur in partly illustrating below this paper in the time of the heat treatment of ARC and Doped n-alloy at embodiment.Based on instruction described herein, for confirming to be suitable for Doped n-alloy and the condition (the for example time of temperature, processing) of optimizing ARC in those skilled in the art's limit of power.
In some embodiments, the ARC that puts on second surface is characterised in that its refractive index is in 2.1 to 2.2 scope.Should be appreciated that such refractive index is meant, for example, after applying and the coating that before heat treatment, is applied.Alternatively, increase refractive index through heat treatment, so that the refractive index in the photovoltaic cell of being produced higher (for example in 2.15 to 2.4 scope).
In some embodiments; The ARC that puts on second surface be characterised in that the graded index that reduces from interface direction with substrate (that is, refractive index with substrate be the highest and be minimum at the interface apart from substrate coating area farthest).Alternatively, in the scope of graded index between 1.7 to 2.25 (for example, applying after and before heat treatment).Alternatively, increase refractive index through heat treatment, so that the graded index in the photovoltaic cell of processing higher (for example in 1.7 to 2.45 scope).
ARC can, for example, forming the 2nd n
+Behind the layer, put on first surface alternatively.Can use any suitable coating compounds (Ta for example
2O
5, TiO
2, silicon nitride, silicon oxynitride).Forming the 2nd n
+The anti-reflection agent that ARC that is applied after the layer and the 2nd n+ layer are applied before forming can be identical or different.For the ARC that puts on second surface, exemplary coatings comprises silicon nitride and silicon oxynitride.
Term " silicon nitride " like what use among this paper, has been described basically by silicon and nitrogen, comprises various isotopes (the stochiometries) (S1 for example of Si and N
3N
4) a series of materials of forming, although can be used as impurity, a certain amount of other atom (for example hydrogen) exists.
Term " silicon oxynitride " refers to SiN
xO
y, wherein each x and y are at most 2 positive number (for example between 0.1 to 2), and x and y meet the chemical valence requirement of Si, N and O.A certain amount of other atom (for example hydrogen) can be used as impurity and exists.
According to the exemplary execution mode, substrate relative thin and flat, so that substrate has two in facing surfaces, it is as first surface described herein and second surface.
Silicon (for example silicon wafer) is exemplary semiconductive substrate.
As confessed in this area; " doping " is the operation of in semiconductor, introducing impurity; Wherein can be increased in the quantity of the free charge charge carrier (free charge carriers) in the semi-conducting material of doping; And as a result of, cause the rising of charge carrier density (chargecarrier density) in the semi-conducting material of doping." p-doping " is meant with material (" the alloy ") doped semiconductor that can receive the weak external electrical that combines from semi-conducting material.Therefore p-doping (wherein " p " expression is positive) is the operation with acceptor (acceptor) material or p-type alloy (their form " hole " or positive charge in semiconductor) doped semiconductor.N-doping (wherein " n " expression is born) is the operation of in semiconductor, using sub-material of power supply or n-type alloy (they form negative electrical charge in semiconductor) doped semiconductor.
Like what use among this paper, when term " alloy " is meant in being present in semiconductive substrate, bring any element or the compound of p-type or n-type electric conductivity (conductivity).Cause the alloy of p-type electric conductivity to be called in this article " p-alloy ", and typically be electron acceptor, and cause the alloy of n-type electric conductivity, be called in this article " n-alloy ", and typically be electron donor.
Boron is exemplary p-alloy, and phosphorus is exemplary n-alloy.Alternatively, arsenic is as the n-alloy.Also consider to be applicable to other p-alloys and the n-alloy of PV battery.
According to optional execution mode, semiconductive substrate was the n-N-type semiconductor N before above-described doping, and it forms n
+And p
+Layer.In such execution mode, photovoltaic cell has n
+-n-p
+Structure, this structure is at n
+Layer and p
+Between the layer n layer is arranged." n
+" expression has the layer that mixes doughtily relatively with the n-alloy, and " p
+" expression has the layer that mixes doughtily relatively with the p-alloy, and " n " expression has the layer that mixes with the n-alloy more weakly.
According to optional execution mode, semiconductive substrate was the p-N-type semiconductor N before the above doping of describing more, and it forms n
+And p
+Layer.In such execution mode, photovoltaic cell has n
+-p-p
+Structure, this structure is at n
+Layer and p
+Between the layer p layer is arranged." n
+" expression has the layer that mixes doughtily relatively with the n-alloy, and " p
+" expression has the layer that mixes doughtily relatively with the p-alloy, and " p " expression has the layer that mixes with the p-alloy more weakly.
Like what use among this paper, such surface described in term " variable at whole first surface ": the concentration in the alloy various zones from the teeth outwards is different from the concentration in alloy other (for example being close to) zones from the teeth outwards.The concentration of any position of n-alloy on first surface can be definite by methods known in the art, for example, and through getting the thin slice sample from the surface of substrate and confirming its element composition.Alternatively, secondary ion quality optical spectroscopy (SIMS) is used for confirming the concentration of n-alloy.SIMS, the standard method of this area is particularly suited for measuring lip-deep local concentration.
The further discussion of the variable concentrations of alloy provides below this paper.
Electrically contact and to form according to method as known in the art.In order to make luminous energy get to reach the substrate of photovoltaic cell, the contact of going up (for example first surface) at least one surface is set arriving surface as much as possible, and the least possible surface of covering.For example, contact can be configured to lattice alternatively.
Alternatively, photovoltaic cell is a single face, wherein is arranged on a lip-deep contact and wears to substrate to allow light, as described above this paper, yet is not provided with like this in other lip-deep contacts.For example, the surface can be electrically contacted covering fully, and such a the setting brought the convenience and the high efficiency of production.
Optionally, photovoltaic cell is two-sided, wherein is arranged on two lip-deep contacts and wears to substrate to allow light, thereby allow photovoltaic cell to be produced by any one side of illumination at battery.As discussing more than this paper and institute's illustration in the embodiment part below this paper; Apply ARC like described herein at second surface; Through when second (back) surface is illuminated, reducing reflection, and especially can be used for increasing the efficient of double side photovoltaic battery.
According to some execution modes, a n
+Layer has the degree of depth in the 0.4-2 mu m range.Alternatively, this degree of depth is in the scope of 0.6-1.2 μ m.
According to some execution modes, a n
+Layer is characterised in that the sheet resistance less than 30 ohm.Alternatively, sheet resistance is less than 25 ohm, alternatively less than 20 ohm, and alternatively less than 15 ohm.According to illustrative embodiments, sheet resistance about 13 ohm to about 25 ohm scope.
It is pointed out that n
+The sheet resistance of layer and the concentration inversely related of n-alloy.A n described herein
+Therefore corresponding to the relative high concentration of n-alloy, this can reduce the efficient of short circuit current and photovoltaic cell to the low relatively sheet resistance of layer.
Therefore, in the exemplary embodiment, replace a n
+The 2nd n of layer
+Layer is with than a n described herein
+The higher sheet resistance of low relatively sheet resistance of layer is a characteristic.
According to some execution modes, the 2nd n
+Layer is characterised in that the sheet resistance of scope between 30-100 ohm.Alternatively, this sheet resistance is in the scope of 40-65 ohm.According to the exemplary execution mode, this sheet resistance is about 55 ohm.
According to some execution modes, the 2nd n
+Layer has the degree of depth in the 0.2-0.7 mu m range, and alternatively in the scope of 0.3-0.4 μ m.
According to illustrative embodiments, remove a n of part from first surface
+Layer comprises the veining first surface.
Like what use among this paper, term " veining (texturing) " means and causes more coarse surface (for example causing Feng Hegu from the teeth outwards).
Like what use among this paper, term " peak " is meant the neighbour higher surf zone of near field, and term " paddy " refers to it is the low surf zone of neighbour near field.
According to some execution modes, veining produces peak and paddy in first surface, and the concentration of n-alloy in the peak of wherein after veining, staying in the first surface is higher than the concentration in paddy.Therefore, in these execution modes, through the variable concentrations of the variable concentrations proof alloy of alloy in Feng Hegu on whole surface.Therefore, the concentration of the n-alloy in the peak will be represented the local Cmax on substrate surface, and will represent local minimum in the concentration of the n-of paddy alloy.These minimum and maximum concentration have formed variable concentrations.
According to some execution modes, at the 2nd n
+The concentration of the n-alloy in the layer is in the peak than at Gu Zhonggao.Alternatively, the concentration of the n-alloy in the peak is the twice at least of the concentration of the n-alloy in the paddy.Alternatively, the concentration of the n-alloy in the peak is at least 3 times of concentration of the n-alloy in the paddy, at least 5 times alternatively, and at least 10 times alternatively.
According to some execution modes, the n-alloy is at the 2nd n
+Concentration in the peak of layer is at least 5 * 10
20Atom/cm
3Alternatively, this concentration is at least 10
21Atom/cm
3, be at least 2 * 10 alternatively
21Atom/cm
3, be at least 3 * 10 alternatively
21Atom/cm
3, and be at least 5 * 10 alternatively
21Atom/cm
3
According to some execution modes, the n-alloy is at the 2nd n
+Concentration in the paddy of layer is less than 10
21Atom/cm
3Alternatively, this concentration is less than 0.5 * 10
21Atom/cm
3, alternatively less than 0.3 * 10
21Atom/cm
3, alternatively less than 0.2 * 10
21Atom/cm
3, and alternatively less than 10
20Atom/cm
3
Should be understood that may be a shade below in n-alloy " low " concentration than the n-alloy in the paddy of the other execution mode that bigger concentration is arranged at Qi Guzhong in the peak than " height " concentration of the n-alloy in the peak of some execution modes that bigger concentration is arranged at Qi Guzhong in the peak at the n-alloy.According to some execution modes, remove the n of part from first surface
+Layer comprises the mean depth of etching first surface to scope between 4 μ m to 12 μ m.Alternatively, this degree of depth is in the scope of 6 μ m to 10 μ m.
According to some execution modes, etching realizes through alkaline solution (solution that for example comprises NaOH).
The one n is described in every kind of method at this paper
+Layer and p
+Layer forms via any method known in the art.
In some embodiments, whenever n
+Layer is deposited and does not have when the variable concentrations of whole surface formation alloy, and applying the film that comprises the n-alloy to first surface can optionally be realized by any method known in the art.According to some execution modes, a n
+Layer and p
+Layer is (for example, through the heating) that forms simultaneously.
According to illustrative embodiments, with the doping of n-alloy to form a n
+Layer and mix with formation p with the p-alloy
+Layer is to be applied to second surface through the film that will comprise the p alloy, and the film that will comprise the n-alloy is applied to first surface, heated substrate then, thus form a n simultaneously
+Layer and p
+Layer is realized.
According to some execution modes, each the self-contained silicon dioxide of film that comprises the film of p-alloy and comprise the n-alloy.Film based on silicon dioxide can optionally be removed by hydrofluoric acid in the operation back of mixing.
According to some execution modes, the film that comprises the p-alloy comprises boron oxide.
According to some execution modes, comprise that the film of n-alloy comprises phosphorus pentoxide (P
2O
5).Alternatively, film comprises the P of at least 20 percentage by weights
2O
5As making routine part illustrational real, phosphorus is at a n
+A concentration and a n in the layer
+The sheet resistance of layer can be through selecting P in the doping
2O
5Suitable concn come easily to control.
Under not by the situation of any special one theory, think a n
+Layer and p
+Form in the time of layer and advantageously prevent at n
+Form p in the layer
+The zone is at n
+Form p in the layer
+The zone will increase shunting nocuously.Yet, be particularly suited for preventing the p that is harmful to
+The concentration of the n-alloy that the zone forms and the degree of depth can be higher than the concentration and the degree of depth of the n-alloy that is particularly suited for optimizing the final products performance.Therefore, think through removing a n of part at least
+Layer is with n
+The concentration of the n-alloy in the layer is reduced to the level that more is applicable to photovoltaic cell.
Other aspect according to the embodiment of the present invention provides the photovoltaic cell of producing according to any method described herein.
Therefore, according to some execution modes, a kind of photovoltaic cell that comprises semiconductive substrate is provided, this substrate comprises n on its first surface
+Layer also comprises p on its second surface
+Layer, second surface scribbles ARC described herein, and electrically contacts and be connected to each first surface and second surface, and wherein the veining first surface to be comprising Feng Hegu, and wherein at n
+The concentration of n-alloy in the peak of first surface in the layer is higher than the concentration in the paddy of first surface.
Should be understood that " the n of photovoltaic cell described herein
+Layer " be equivalent to " the 2nd n that in the content of method described herein, discussed
+Layer ".Therefore, the n of photovoltaic cell
+Layer can be alternatively with based on the 2nd n
+Described herein any characteristics (the for example degree of depth, sheet resistance, local n-concentration of dopant) of layer are characteristic.
Alternatively, photovoltaic cell is a double side photovoltaic battery.
Substrate comprises silicon alternatively, and the p-alloy comprises boron alternatively, and the n-alloy is selected from the group of being made up of phosphorus and arsenic alternatively, and wherein phosphorus is exemplary n-alloy.
According to some execution modes, the fill factor, curve factor of photovoltaic cell is, at least 75.5%, alternatively at least 76%, alternatively at least 76.5%, and alternatively at least 77%.
According to some execution modes, the efficient of photovoltaic cell is, at least 16.7%, alternatively at least 16.8%, alternatively at least 16.9%, and alternatively at least 17%.
According to some execution modes, the short-circuit current density of photovoltaic cell is at least 0.033 ampere/cm
2, at least 0.0335 ampere alternatively/cm
2, and at least 0.034 ampere alternatively/cm
2
Aforementioned physical parameter is by being confirmed with the measurement of estimating under the standard test condition that uses in the photovoltaic cell in this area.Standard test condition comprises 1000W/m
2Solar irradiance, at sun reference spectrum and 25 ° of C of battery temperature of 1.5AM (air mass (airmass)).
For example, can measure the electric current (I that is produced when short circuit (for example voltage=0) by photovoltaic cell through the standard technique of utilizing this area
SC) measure short-circuit current density.Can pass the voltage of photovoltaic cell when utilizing standard technique to be determined at short circuit (being electric current=0) and measure open circuit voltage (V
OC).
Can export through the maximum power of measuring photovoltaic cell and measure fill factor, curve factor and efficient.
Therefore, fill factor, curve factor is defined as maximum power and short circuit current and open circuit voltage (I
SCX V
OC) product-maximum power between ratio, like the I that measures described above
SCAnd V
OC
Efficient can be measured as described maximum power above this paper through measuring, and is distinguished by the light irradiance of input standard test condition.
Should be understood that execution mode of the present invention not necessarily can cause the short-circuit current density of increase.Exactly, as illustrational with following embodiment part, be the high short-circuit current density of appropriateness and the combination of the fill factor, curve factor of increase at this paper, the high efficiency of feasible photovoltaic cell according to embodiment of the present invention.
Other aspect according to the embodiment of the present invention provides the photovoltaic array that comprises any photovoltaic cell described herein in a large number, and these photovoltaic cells are connected to each other.
Use as indicated, the array with series connection and/or parallelly connected interconnective photovoltaic cell described in term " photovoltaic array ".Series connected battery connects the voltage that produces addition.The battery of parallel connection connects the stronger electric current of generation.Therefore, those skilled in the art can connect battery with the mode of voltage and current that expectation is provided.
This array can further make up other assembly alternatively; Like sheet glass; Under the situation of not sealing the light that arrives photovoltaic cell and/or substrate, from environment, to protect photovoltaic cell, this substrate is confirmed the direction (for example being used to follow the tracks of motion every day of the sun) of array with the direction of light source.Alternatively, exist inverter so that current conversion is become alternating current.There is battery pack alternatively, to store energy by photovoltaic cell was produced.
Other aspect according to embodiment of the present invention provides the generating equipment that comprises according to photovoltaic array described herein.Generating equipment comprises alternatively so that a plurality of photovoltaic arrays that their maximum exposure are placed in the mode of sunlight.
Should be appreciated that the best located of photovoltaic array and the directed photovoltaic cell that can be depending on wherein are two-sided or single face.
Other aspect according to embodiment of the present invention provides the electronic device that comprises according to the photovoltaic cell of claim 34.In some embodiments, photovoltaic cell is the power supply that is used for electronic device.
The exemplary application of photovoltaic cell described herein and/or solar array (solar arrays) comprises; But be not limited to household electrical source, water heater, portable computer, notebook computer, portable charged equipment (portable charging dock), mobile phone, pager, PDA, digital camera, smoke detector, GPS device, toy, computer peripheral, satellite, spacecraft, portable electronics (for example portable TV, portable illumination apparatus) and no electric wire electrical equipment (for example do not have electric wire vacuum cleaner, no electric wire drilling machine and do not have the electric wire saw).
Other aspect according to embodiment of the present invention provides electromagnetic radiation detector, and this detector comprises photovoltaic cell described herein, and wherein electromagnetic radiation is selected from the group of being made up of ultra-violet radiation, visible radiation and infrared radiation.This detector can be used for, for example, and to detect radiation (for example as infrared detector) and/or to measure amount of radiation (for example in spectrophotometry).
Being expected at patent can the many relevant doping techniques of exploitation from the ripe process of application of the present invention and (a priori) new technology of the reasoning that the scope of term " doping " is intended to comprise that all are such.
Like what use among this paper, term " about " is meant ± 10%.
Term " comprises ", " comprising ", " containing ", " having ", and " having " and their combination mean " including but not limited to ".
Term " by ... form " mean " comprise and be limited to ".
Term " basically by ... form " mean composition, method or structure and can comprise other composition, step and/or part, but when having only the new characteristic of fundamental sum when change desired composition, method or structure on other composition, step and/or the partial sterility matter.
Term as used herein " exemplary " means " be used as instance, quote as proof or illustration ".The execution mode of any being described to " exemplary " is not necessarily to be understood that more preferred or favourable than other execution modes, and/or gets rid of the characteristic of incorporating other execution modes into.
Use as this paper, " alternatively " means " provide in some embodiments and do not provide in other embodiments ".Any special execution mode of the present invention can comprise a large amount of " optional " characteristics, only if such characteristic contradicts.
Like what use among this paper, singulative " ", " a kind of " and " this (kind)/should " comprise the reference of plural number, only if context clearly indication in addition.For example, term " a kind of compound " or " at least a compound " can comprise a large amount of compounds, comprise the mixture of these compounds.
In the present patent application full text, various embodiments of the present invention can exist with the scope mode.Should be understood that description with the scope mode be merely convenience with brief for the purpose of, and should not be understood as that rigidity restriction as scope of the present invention.Therefore, the description of scope should be understood that specifically to disclose all possible subrange and each numerical value in this scope.For example, the description of scope should be understood that specifically to disclose subrange as 1 to 6, as 1 to 3,1 to 4,1 to 5,2 to 4,2 to 6,3 to 6 etc., and each numeral in this scope, for example, 1,2,3,4,5 and 6.The width of application of the present invention and scope is irrelevant.
When in this paper, mentioning number range, be intended to be included in any number of quoting as proof (mark or integer) in the indicating range.Term " scope exists " first indicated number and second indicated number " between " with " in the scope " this paper of first indicated number " extremely ", second indicated number in use interchangeably; And be intended to comprise first and second indicated numbers, and all marks and integer between them.
Like what use among this paper; Term " method " is meant mode, means, technology and the operation that is used to accomplish given task; Include but not limited to, or mode known or that come with the operation development from known mode, means, technology by the working people of chemistry and physical field, means, technological and operate.
Should be understood that for the sake of clarity some characteristic described in the context of execution mode independently of the present invention also can provide with combination in single execution mode.On the contrary; For for simplicity, the various characteristics described in the context of single execution mode of the present invention also can provide separately; Or provide, or provided as what in other described execution mode of the present invention, be fit to the combination of any suitable son.Some characteristic of in the context of various execution modes, describing will not be considered to the essential feature of those execution modes, only if these execution modes are invalid not having under the situation of those elements.
As desired various execution modes of the present invention of claim part that described and below more than this paper and aspect, experiment support is arranged among the embodiment below.
Embodiment
With reference now to following examples,, it explains execution modes more of the present invention with above description with unrestriced mode.
The illustrative preparation of photovoltaic cell
Use has p type single crystal silicon standard side sheet (pseudosquare) substrate (125 * 125mm) of 1.6 Ohmic resistance rates.The crystal orientation of substrate surface is [100].Remove cutting damage (Saw damage) through the etching in 25% sodium hydroxide solution.Then substrate is washed in peroxide-ammonia (peroxide-ammoniac) solution.
Adopt spin coating (spin-on) method to use the rotating speed of 3000rpm, the silicon dioxide film that will comprise the boron oxide of 50% (by weight) puts on the back side of substrate.
The experimental group that substrate is divided into 3 60 substrates.Adopt spin coating method will comprise the P of 20%, 25% or 30% (by weight)
2O
5Silicon dioxide film put on the front surface of substrate.
Through under nitrogen atmosphere under the temperature of 1010 ° of C the heating 20 minutes so that dopant in substrate.The p that goes up overleaf that makes
+Layer has 25 ohm or the littler sheet resistance and the degree of depth of about 1 μ m.Contain 20%, 25% and 30% P respectively using
2O
5The phosphosilicate film time, the n that goes up in front that makes
+Layer shows 25,17 and 13 ohm sheet resistance.
Sheet resistance adopts the four point probe method to confirm.n
+The degree of depth of layer is confirmed by the sheet resistance that records, and is removed the thin layer of substrate through etching subsequently.
Remove oxide skin(coating) by 10% hydrofluoric acid solution then.N is also removed in the front of the substrate of veining simultaneously
+Layer is to realize in the etching of 80 ° of C through the aqueous solution with the isopropyl alcohol of 2% NaOH and 4%.Etching was carried out 5,10,15,25,30 or 35 minutes.The substrate of weighing before and after the etching.Difference according to weight before and after veining is confirmed etched mean depth.
Utilize atmospheric pressure chemical vapour deposition (CVD) method then, the anti-reflecting layer of titanium dioxide is put on boron doped surface.
Diffuse through to apply and comprise 50% P the second time in the phosphorus entering substrate
2O
5The phosphosilicate glass film, and heating was implemented in 20 minutes under the temperature of 850 ° of C.The n that makes
+Layer shows 55 ohm sheet resistance, and has the degree of depth of about 0.35 μ m.Aforesaidly confirm the phosphorus surface concentration.
Remove the phosphosilicate glass film by 10% hydrofluoric acid solution then.Titanium dioxide film hydrofluoric acid resistant solution.Then the anti-reflecting layer with silicon nitride puts on front surface.
Adopt the grid printing method contact pattern to be put on the two sides of substrate.PV-156 paste (DuPont) is used for preceding contact; Paste by Monokristal (Stavropol, Russia) exploitation is used for the back contact.Sintering carries out in the Centrotherm stove.
Implementing the laser p-n junction at the 0.2mm place, edge apart from substrate then separates.Then measure the parameter of solar cell properties.Among the table 1-3 below this paper the result who records has been shown.Each parameter dependence to average etch depth during veining has been described in diagram in Fig. 3-5.
Table 1: the P that is used to prepare use 30%
2O
5The mean value of the solar cell of film
Table 2: the P that is used to prepare use 25%
2O
5The mean value of the solar cell of film
Table 3: the P that is used to prepare use 20%
2O
5The mean value of the solar cell of film
For some samples of preparation, first time of phosphorus with spread both for the second time after (promptly at a n
+Layer and the 2nd n
+The layer both in) utilize SIMS (secondary ion mass spectrometry) to measure the phosphorus surface concentration.Measure based on these, estimate at the peak of photovoltaic cell and the phosphorus concentration in the paddy.Expection concentration in paddy is measured concentration after the diffusion second time of phosphorus, and the expection concentration in the peak is in the first time and the summation of the phosphorus concentration that records after spreading for the second time.The result is summarised in the table 4.
Table 4: phosphorus surface concentration and for the mean value of the expection concentration in peak and the paddy.
As contrast,, 25 solar cells have been prepared as described in Russ P No.2139601.In this operation, initial n
+Layer is through applying the P that comprises 15% (by weight) to front surface
2O
5Silicon dioxide film and form.The initial n that makes
+Layer has the degree of depth of 35 ohm sheet resistance and 1.2 μ m.The mean parameter of contrast solar cell is as follows: V
OC=616mV, J
SC=35.9mA/cm
2, efficient=16.2%.
As shown in Figure 3, the short-circuit current density (J of solar cell
SC), depend on etched depth during the veining, and the average etch depth more than about 4 μ m is maximum.
As shown in Figure 4, the fill factor, curve factor of solar cell (FF) depends on etched depth during veining, and is maximum at the average etch depth less than about 8 μ m.
As shown in Figure 5, the efficient of solar cell depends on etch depth, and when average etch depth is in the scope of about 4-12 μ m, is maximum.
As show 1-3 and shown in Figure 5, the efficient comparison of solar cell is according to efficient (16.2%) height of battery, and acquisition surpasses 17% efficient.The relative gain that efficient surpasses contrast is about 3%-5%.
These results show, and are described above like this paper, when etch depth is in the optimum range of the short circuit current that is used to obtain high relatively value and fill factor, curve factor, and n at first
+The formation of layer and cause high solar battery efficiency through etched removal.
ARC is to the influence of photovoltaic cell performance
Like embodiment 1 described preparation photovoltaic cell, the n that it is initial
+Layer has 25 ohm sheet resistance and the etch depth of 8 μ m.Implementing the laser p-n junction at the 0.2mm place, edge apart from substrate separates.
As described in Example 1, forming final n through phosphorus doping
+Before the layer ARC is put on boron doped surface, and behind phosphorus doping, ARC is put on final n
+Layer.
In one group, apply anti-reflecting layer at every face of photovoltaic cell and comprise the titanium oxide layer (refractive index=2.2) that utilizes atmospheric pressure chemical vapour deposition (CVD) method to form 75nm, as described in Example 1.
In second group, apply anti-reflecting layer at every face of photovoltaic cell and comprise, utilize plasma enhanced chemical vapor deposition (PECVD) method, form the silicon nitride layer (refractive index=2.2) of 60nm in silicon oxynitride layer (refractive index=1.7) back of formation ~ 80nm.
Then with gathering (ethyl-vinylacetate) (EVA) film (refractive index=1.45) lamination photovoltaic cell.
As contrast, like the preparation photovoltaic cell described in Russ P No.2139601.
Both measure the performance of photovoltaic cell down illumination in front (illumination n-doping surfaces) and back side illumination (illumination p-doping surfaces).Anti-reflecting layer to the influence of the various parameters of photovoltaic cell performance shown in the table 5.
Table 5: mean value with solar cell of different ARCs.
As shown in table 5, for front illumination and back illumination, the efficient comparison of solar cell is higher according to the efficient of battery.Like what in table 5, further show, silicon nitride/silicon oxynitride ARC is with respect to TiO
2Coating provides the efficient of raising, especially for back illumination.
The effectively measurement of minority carrier lifetime
In order to measure of the influence of silicon nitride deposition, at p to surface recombination
+-p-p
+Measure effective minority carrier lifetime in the structure.Use p
+-p-p
+Structure replaces the n of photovoltaic cell
+-p-p
+Structure is to simplify the explanation of experimental result.
By 4 samples of 1 ohm of .cm silicon wafers, the back side of silicon dioxide film to substrate through applying the boron oxide that comprises 50% (by weight) on the two sides of these samples, then under blanket of nitrogen under the temperature of 1010 ° of C heating 20 minutes and doped with boron.Utilize plasma enhanced chemical vapor deposition method (PECVD) that the silicon nitride layer (refractive index=2.2) of 60nm is deposited on wafer two-sided then, then make wafer stand the heat treatment under the temperature of 850 ° of C in 20 minutes.
Life value is confirmed in decline by in the injection carrier concentration in each stage.
As shown in Figure 6, the efficient carrier life value reduces after the silicon nitride deposition and after heat treatment, recovers fully.
These results show that the heat treatment of antagonistic reflex coating is through reducing p
+The surface recombination of layer increases carrier lifetime, thereby improves photovoltaic cell performance.
The coating refractive index is to the influence of photovoltaic cell stream
For 1-layer and 2 layers of coating, calculate the short-circuit current density (J of the refractive index of ARC to photovoltaic cell
SC) influence.
In order to calculate; Suppose that photovoltaic cell is the photovoltaic cell based on theoretical maximum internal quantum efficiency of having of silicon and smooth surface, it is in the optical medium with refractive index (refractive index of gathering (ethylene-vinyl acetate) (poly (ethylene-vinyl acetate))) of 1.45.
For 1-layer coating,, calculate the J for each given refractive index of coating as the function of coating layer thickness
SC, and the J when being determined at best coating layer thickness
SC(promptly at J
SCThe J of the coating layer thickness when maximum
SC).
For 2-layer coating, as the function of refractive index and upper thickness, calculate coating for each given refractive index with for the J of lower floor's (near layer of silicon face) of different-thickness
SC, and the J when being determined at the best overlay refractive index
SC(promptly at J
SCCoating layer thickness when maximum and the J of upper strata refractive index
SC).
As shown in Figure 7, be about at least 2.3 o'clock in the refractive index of ARC (when in coating, having a plurality of layers, or the lower floor of ARC), short-circuit current density is the highest.
Though the present invention has combined its embodiment to describe, obvious many selections, change and modification will be conspicuous to those skilled in the art.Therefore, the present invention is intended to comprise and belongs to the claim spirit and interior all such selections, change and the modification of broad range that the present invention adds.
All publications, patent and the patent application in specification of the present invention, mentioned are incorporated application of the present invention into through reference in this article with their full content, specifically and individually incorporate this paper into through reference as each publication, patent or patent application.In addition, quoting as proof or identifying of any reference in the application of the present invention not will be understood that such reference can be used as the permission for prior art of the present invention.For the employed degree of chapter title, should they be used as inevitable restriction.
Claims (39)
1. method of producing photovoltaic cell, said method comprises:
A) with the first surface of n-alloy doping semiconductive substrate, so that in said substrate, form a n
+Layer;
B) with the p-alloy second surface of said substrate that mixes, so that in said substrate, form p
+Layer;
C) apply ARC to said second surface, said ARC comprises the material that is selected from the group of being made up of silicon nitride and silicon oxynitride;
D) remove a said n partly from the said first surface of said substrate
+Layer makes that the concentration of the said n-alloy in the said first surface stay said substrate is variable on whole said first surface;
E) with the mix said first surface of said substrate of n-alloy, to form the 2nd n
+Layer makes at said the 2nd n
+The concentration of the said n-alloy in the layer is variable at whole said first surface; And
F) on said first surface and said second surface, all form and electrically contact, produce said photovoltaic cell thus,
It is wherein, said that to apply said ARC to said second surface be at a said n who removes said part from said first surface
+Before or after the layer, and mix the said first surface of said substrate to form said the 2nd n at the said n-alloy of said usefulness
+Carry out before the layer.
2. method according to claim 1, wherein, a said n
+Layer is characterised in that the sheet resistance less than 30 ohm.
3. according to each described method in the claim 1 and 2, wherein, a said n
+Layer has the degree of depth in the 0.4-2 mu m range.
4. according to each described method in the claim 1 to 3, wherein, said the 2nd n
+Layer is characterised in that the sheet resistance in 30-100 ohm scope.
5. according to each described method in the claim 1 to 4, wherein, said the 2nd n
+Layer has the degree of depth of scope between 0.2-0.7 μ m.
6. according to each described method in the claim 1 to 5, wherein, a said said n who removes said part from said first surface
+Layer comprises the said first surface of veining.
7. method according to claim 6; Wherein, Said veining produces peak and paddy in said first surface, the concentration of concentration in said peak of wherein after veining, staying the said n-alloy in the said first surface is higher than the concentration in said paddy.
8. method according to claim 7, wherein, at said the 2nd n
+The concentration of said n-alloy in said peak in the layer is higher than the concentration in said paddy.
9. according to each described method in the claim 1 to 8, wherein, remove the said n of said part from said first surface
+Layer comprises said first surface is etched to the mean depth in 4 μ m to 12 mu m ranges.
10. according to each described method in the claim 1 to 9, wherein, a said n
+Layer and said p
+Layer forms simultaneously.
11. method according to claim 10, wherein, the said n-alloy of said usefulness mixes to form a said n
+Layer and the said p-alloy of said usefulness mixes to form said p
+Layer is through following realization:
The film that (i) will comprise said p-alloy puts on said second surface;
The film that (ii) will comprise said n-alloy puts on said first surface; And
(iii) heat said substrate,
Form a said n thus simultaneously
+Layer and said p
+Layer.
12. according to each described method in the claim 1 to 11, wherein, said substrate is the n-N-type semiconductor N before said doping.
13. according to each described method in the claim 1 to 11, wherein, said substrate is the p-N-type semiconductor N before said doping.
14. according to each described method in the claim 1 to 13, wherein, said ARC is characterised in that refractive index is in 2.1 to 2.2 scope.
15. according to each described method in the claim 1 to 14, wherein, said ARC is characterised in that the graded index that descends from the interface direction with said substrate.
16. method according to claim 15, wherein, said graded index is in from 1.7 to 2.25 scope.
17., further comprise making said ARC through heat-treated according to each described method in the claim 1 to 16.
18. method according to claim 17, wherein, said heat treatment increases the refractive index of said ARC.
19. according to each described method in the claim 17 and 18, wherein, said heat treatment is mixed the said first surface of said substrate to form said the 2nd n simultaneously with said n-alloy
+Layer.
20. according to each described method in the claim 1 to 19, wherein, the said ARC that puts on said second surface suppresses to mix through the said n-alloy by the coated surface of said ARC.
21. photovoltaic cell according to each described method production in the claim 1 to 20.
22. a photovoltaic cell that comprises semiconductive substrate, said substrate comprises n on its first surface
+Layer also comprises p on its second surface
+Layer, said n
+Layer comprises the n-alloy and said p
+Layer comprises the p-alloy, and said second surface scribbles ARC, and said ARC comprises the material that is selected from the group of being made up of silicon nitride and silicon oxynitride, and electrically contacts and be connected to each said first surface and said second surface,
Wherein, said first surface by veining comprising Feng Hegu, and
Wherein, at said n
+The concentration of said n-alloy in the said peak of said first surface in the layer is higher than the concentration in the said paddy of said first surface.
23. photovoltaic cell according to claim 22, wherein, said n
+Layer is characterised in that the sheet resistance in 30-100 ohm scope.
24. according to each described photovoltaic cell in the claim 22 and 23, wherein, said n
+Layer has the degree of depth in the 0.2-0.7 mu m range.
25. according to Claim 8 with 22 to 24 in each described method or photovoltaic cell, wherein, the concentration of said n-alloy in said peak is the twice at least of the concentration of said n-alloy in said paddy.
26. according to Claim 8 with 22 to 25 in each described method or photovoltaic cell, wherein, the concentration of said n-alloy in said peak is at least 5 * 10
20Atom/cm
3
27. according to Claim 8 with 22 to 26 in each described method or photovoltaic cell, wherein, the concentration of said n-alloy in said paddy is less than 10
21Atom/cm
3
28. according to each described photovoltaic cell in the claim 22 to 24, wherein, said ARC is characterised in that refractive index is in 2.1 to 2.4 scope.
29. according to each described photovoltaic cell in the claim 22 to 24 and 28, wherein, said ARC is characterised in that the graded index that descends from the interface direction with said substrate.
30. photovoltaic cell according to claim 29, wherein, said graded index is in from 1.7 to 2.45 scope.
31., it is characterized in that short-circuit current density is at least 0.033 ampere/cm according to each described photovoltaic cell in the claim 21 to 24 and 28 to 30
2
32., it is characterized in that fill factor, curve factor is at least 75.5% according to each described photovoltaic cell in the claim 21 to 24 and 28 to 31.
33., it is characterized in that efficient is at least 16.7% according to each described photovoltaic cell in the claim 21 to 24 and 28 to 32.
34. according to each described photovoltaic cell in the claim 21 to 24 and 28 to 33, it is a double side photovoltaic battery.
35., comprise n according to each described photovoltaic cell in the claim 21 to 24 and 28 to 34
+-n-p
+Structure.
36., comprise n according to each described photovoltaic cell in the claim 21 to 24 and 28 to 34
+-p-p
+Structure.
37. a photovoltaic array comprises a plurality ofly according to each described photovoltaic cell in the claim 21 to 24 and 28 to 36, said a plurality of photovoltaic cells are connected to each other.
38. a generating equipment comprises according to the described photovoltaic array of claim 37.
39. an electronic device comprises according to each described photovoltaic cell in the claim 21 to 24 and 28 to 36.
Applications Claiming Priority (5)
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US12/591,391 US20110114147A1 (en) | 2009-11-18 | 2009-11-18 | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
US12/591,390 US8586862B2 (en) | 2009-11-18 | 2009-11-18 | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
US12/591,391 | 2009-11-18 | ||
US12/591,390 | 2009-11-18 | ||
PCT/IB2010/055221 WO2011061694A2 (en) | 2009-11-18 | 2010-11-17 | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
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CN2010800616051A Pending CN102754215A (en) | 2009-11-18 | 2010-11-17 | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
CN201080061602.8A Expired - Fee Related CN102725854B (en) | 2009-11-18 | 2010-11-17 | Manufacture the method for photovoltaic cell, consequent photovoltaic cell and application thereof |
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EP (2) | EP2502278A2 (en) |
JP (2) | JP2013511839A (en) |
CN (2) | CN102754215A (en) |
CA (2) | CA2780913A1 (en) |
WO (2) | WO2011061693A2 (en) |
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CN104051575A (en) * | 2014-06-20 | 2014-09-17 | 润峰电力有限公司 | Manufacturing technology of bionic solar cell with two sides receiving light |
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US8796060B2 (en) | 2009-11-18 | 2014-08-05 | Solar Wind Technologies, Inc. | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
US8586862B2 (en) | 2009-11-18 | 2013-11-19 | Solar Wind Technologies, Inc. | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
KR101627028B1 (en) * | 2014-02-20 | 2016-06-03 | 제일모직주식회사 | The method for preparing the bifacial solar cell |
KR101627029B1 (en) * | 2014-02-20 | 2016-06-03 | 제일모직주식회사 | The method for preparing the ibc solar cell |
KR20180100301A (en) | 2015-10-25 | 2018-09-10 | 솔라라운드 리미티드 | Manufacturing method of double-sided cell |
CN107340785B (en) * | 2016-12-15 | 2021-05-18 | 江苏林洋新能源科技有限公司 | Double-sided photovoltaic cell module tracking method based on intelligent control and controller |
CH713453A1 (en) | 2017-02-13 | 2018-08-15 | Evatec Ag | Process for producing a substrate with a boron-doped surface. |
US11171254B2 (en) * | 2018-01-08 | 2021-11-09 | Solaround Ltd. | Bifacial photovoltaic cell and method of fabrication |
CN114649427B (en) * | 2021-09-14 | 2023-09-12 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module |
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Also Published As
Publication number | Publication date |
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WO2011061693A2 (en) | 2011-05-26 |
CA2780913A1 (en) | 2011-05-26 |
CN102725854B (en) | 2015-11-25 |
JP2013511839A (en) | 2013-04-04 |
WO2011061694A3 (en) | 2012-01-19 |
EP2502277A2 (en) | 2012-09-26 |
JP6027443B2 (en) | 2016-11-16 |
WO2011061694A2 (en) | 2011-05-26 |
EP2502278A2 (en) | 2012-09-26 |
JP2013511838A (en) | 2013-04-04 |
CN102725854A (en) | 2012-10-10 |
CA2781085A1 (en) | 2011-05-26 |
WO2011061693A3 (en) | 2012-01-05 |
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