CN106328753A - MEMS microstructure-based infrared-strengthened Si-PIN detector and preparation method thereof - Google Patents
MEMS microstructure-based infrared-strengthened Si-PIN detector and preparation method thereof Download PDFInfo
- Publication number
- CN106328753A CN106328753A CN201610739151.8A CN201610739151A CN106328753A CN 106328753 A CN106328753 A CN 106328753A CN 201610739151 A CN201610739151 A CN 201610739151A CN 106328753 A CN106328753 A CN 106328753A
- Authority
- CN
- China
- Prior art keywords
- mems
- ion
- infrared
- micro structure
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- PNXKRHWROOZWSO-UHFFFAOYSA-N [Si].[Ru] Chemical compound [Si].[Ru] PNXKRHWROOZWSO-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910000929 Ru alloy Inorganic materials 0.000 claims abstract description 23
- 230000003287 optical effect Effects 0.000 claims abstract description 11
- 230000002708 enhancing effect Effects 0.000 claims description 41
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 26
- 239000010409 thin film Substances 0.000 claims description 24
- 239000010408 film Substances 0.000 claims description 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 11
- 229910052681 coesite Inorganic materials 0.000 claims description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052682 stishovite Inorganic materials 0.000 claims description 9
- 229910052905 tridymite Inorganic materials 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 238000001459 lithography Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 5
- 238000005728 strengthening Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 10
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 230000001276 controlling effect Effects 0.000 abstract description 6
- 230000001105 regulatory effect Effects 0.000 abstract description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 abstract description 4
- 229910045601 alloy Inorganic materials 0.000 abstract description 4
- 239000000956 alloy Substances 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 4
- 229910052707 ruthenium Inorganic materials 0.000 abstract description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
- 230000004043 responsiveness Effects 0.000 description 11
- 238000005286 illumination Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000005622 photoelectricity Effects 0.000 description 3
- 229910000846 In alloy Inorganic materials 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002329 infrared spectrum Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000013742 energy transducer activity Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 238000004989 laser desorption mass spectroscopy Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides an MEMS microstructure-based infrared-strengthened Si-PIN detector and a preparation method thereof. The detector comprises a silicon intrinsic substrate, an MEMS microstructure layer, an infrared-strengthened amorphous silicon ruthenium alloy film, a lower electrode, a P type region, an annular P+ type region and an upper electrode; and the MEMS microstructure layer is provided with posts or holes arranged in a cube array. Different reflectivity and absorption peak positions can be obtained by regulating and controlling the diameters, the heights or the depths and the cycles of the posts or the holes with a microstructure, so that the response characteristics of a specific wavelength are improved, a relatively narrow optical band gap can be obtained by regulating and controlling the ruthenium content in the alloy film to capture near-infrared light with lower energy and a greater wavelength through the MEMS microstructure layer. Absorption of the near-infrared light can be increased, the detection range of the photoelectric detector is expanded and the detection efficiency of the near-infrared light is improved.
Description
Technical field
The invention belongs to photodetector technical field, relate to photodetector structure, be specifically related to a kind of based on
Infrared enhancing Si-PIN detector of MEMS micro structure and preparation method thereof.
Background technology
Photodetector is as Fiber Optical Communication System, infrared imaging system, laser warning system and LDMS etc.
Important component part, be obtained in terms of civil and military and be widely applied.Now widely used photodetector master
There is the silicon photodetector of detection 400nm～1100nm wavelength and detect the InGaAs near-infrared photoelectricity more than 1100nm wavelength
Detector.Wherein Si-PIN photodetector has fast response time, highly sensitive feature, and its raw material Si resource is rich
Richness, low cost, be prone to large-scale integrated, correlation technique are ripe, and therefore silicon-based detector is widely used.But the folding due to Si
Rate of penetrating is bigger, and incident illumination is big in its surface reflection loss, reaches more than 30%, and its energy gap is relatively big (1.12eV),
Light more than 1100nm cannot be absorbed, namely detect less than the optical signal more than 1100nm wavelength, the most typically use
InGaAs photodetector substitutes.But InGaAs material is much more expensive, thermomechanical property is poor, crystal mass is poor and not
Easily compatible with existing silicon microelectronic technique, there is shortcomings.
Summary of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to solution problem, it is provided that a kind of based on MEMS
Infrared enhancing Si-PIN detector of micro structure and preparation method thereof.
For achieving the above object, technical solution of the present invention is as follows:
A kind of infrared enhancing Si-PIN detector based on MEMS micro structure, including silicon intrinsic substrate, is positioned at silicon intrinsic lining
Under side MEMS microstructured layers, be positioned at the infrared enhancing non-crystalline silicon ruthenium alloy thin film below MEMS microstructured layers, be positioned at infrared
Strengthen the bottom electrode below non-crystalline silicon ruthenium alloy thin film, be positioned at the p type island region of zone line above silicon intrinsic substrate, be positioned at silicon intrinsic
The ring-shaped P of substrate overlying p-type district surrounding+Type district, being positioned at the upper electrode of p type island region upper surface, described MEMS microstructured layers is for by just
The pillar of cube array arrangement or hole, detector photosurface is the upper surface of p type island region.
It is preferred that, the pillar of MEMS microstructured layers or a diameter of 0.5 μm of hole～2 μm, height or the degree of depth are
0.5 μm～2 μm, the distance between two adjacent pillars or the hole center of circle is 1 μm～3 μm.
It is preferred that, infrared enhancing non-crystalline silicon ruthenium alloy thin film uses RF magnetron co-sputtering method to prepare.
It is preferred that, the optical band gap scope of infrared enhancing non-crystalline silicon ruthenium alloy thin film is 0.5eV～1.5eV.
It is preferred that, infrared enhancing non-crystalline silicon ruthenium alloy film thickness scope is 50nm～150nm.
It is preferred that, described p type island region is that boron diffusing, doping forms p type island region, and doping content scope is 1 × 1014ion/
cm3～2 × 1016ion/cm3, junction depth is 0.2 μm～2 μm.Exceed this scope and then can be substantially reduced the responsiveness of device, affect device
Part performance.
It is preferred that, described ring-shaped P+Type district is the P that the doping of boron re-diffusion is formed+Type district, doping content scope is 4
×1018ion/cm3～2 × 1019ion/cm3, junction depth is 1 μm～3.5 μm, and its junction depth is more deeper than the junction depth of described p type island region.Exceed
This scope then can be substantially reduced the responsiveness of device, affects device performance.
It is preferred that, described bottom electrode and the extremely metal film electrode that powers on, described metal is aluminum, gold or Jin Gehe
Gold, the thickness of bottom electrode and upper electrode is 50nm～150nm.Exceed this scope and then can be substantially reduced the responsiveness of device, impact
Device performance.
It is preferred that, described MEMS micro structure silicon layer be the most thinning after monocrystalline silicon surface, use MEMS
The square MEMS micro structure of the three-dimensional space array distribution that technique obtains at the silicon substrate back side, carries out phosphorus re-spread the most again
Dissipate or ion implantation doping forms N+District, doping content scope is 3 × 1015ion/cm3～1 × 1017ion/cm3, junction depth is 1 μm
～3 μm.
The present invention also provides for a kind of above-mentioned preparation method based on MEMS micro structure infrared enhancing Si-PIN detector, including
Following steps:
Step 1: be the N-type high resistant monocrystal silicon that resistivity is 2500 Ω cm～the 3500 Ω cm basis of<111>in crystal orientation
Levy substrate surface oxidation growth SiO2Film layer；
Step 2: at SiO2Film surface surrounding makes P by lithography+The figure in type district, then carries out the doping of boron re-diffusion and forms P+
Type district, doping content scope is 4 × 1018ion/cm3～2 × 1019ion/cm3, junction depth is 1 μm～3.5 μm；
Step 3: at SiO2Film surface makes p type island region figure by lithography, then carries out boron diffusing, doping and forms p type island region, doping
Concentration range is 1 × 1014ion/cm3～2 × 1016ion/cm3, junction depth is 0.2 μm～2 μm；
Step 4: silicon intrinsic substrate back is carried out thinning, grind, polish, making the thickness of silicon intrinsic substrate thinning is 250 μ
M～350 μm, then the back side is carried out MEMS technology formation MEMS microstructured layers；
Step 5: the substrate back with MEMS microstructured layers is carried out the doping of phosphorus re-diffusion and forms N+Type district, doping content
Scope is 3 × 1015ion/cm3～1 × 1017ion/cm3, junction depth is 1 μm～3 μm；
Step 6: use RF magnetron co-sputtering method to deposit one layer infrared enhancing non-crystalline silicon ruthenium on MEMS microstructured layers
Alloy firm；
Step 7: upper electrode and the preparation of bottom electrode.
Present invention N overleaf on the basis of traditional Si-PIN detector+Type district add a floor MEMS microstructured layers and
One layer infrared enhancing non-crystalline silicon ruthenium alloy thin film.
MEMS micro structure silicon is that a kind of employing miromaching obtains three-dimensional space array on silicon crystal surface
The silicon crystal surface micro-structure of distribution, be a kind of physical dimension in micron dimension, and be the equally distributed micro structure of large area.
The most small structure can make incident illumination reflect at microstructured layers multiple reflections, the transmission light absorbing the most depleted layer
Heavily absorb, the absorbance of light can be increased, improve the responsiveness of photodetector.And by regulating and controlling the pillar of micro structure
The diameter of (hole), highly (degree of depth) and cycle, can obtain different reflectance and absworption peak position, thus improve certain wave
Long responsiveness.
Infrared enhancing non-crystalline silicon ruthenium alloy thin film has that absorptivity is high, energy gap is adjustable, electron temperature coefficient is big, can
Large area low temperature (< 400 DEG C) film forming, preparation technology simple with silicon semiconductor process compatible etc. feature, by regulating and controlling non-crystalline silicon ruthenium
In alloy firm, the content of ruthenium and the thickness of thin film, regulate and control the optical band gap of thin film so that it is optical band gap scope control exists
0.5eV～1.5eV, makes the energy gap of silicon materials narrow, and the light of such long wavelength also can be absorbed, and is applied at silicon photoelectricity
Detector field, can improve the responsiveness of detector, extends detector near infrared spectrum response range.
Described detector can not only strengthen the absorption to visible ray and near infrared light, it is also possible to spread spectrum response model
Enclose, there is near infrared absorption enhancing, response spectrum wide ranges, responsiveness advantages of higher.
The basic functional principle of the present invention is: when incident illumination enters the space-charge region of Si-PIN photodetector, can swash
Sending out the electron-hole pair of space-charge region, electronics and hole move to the two poles of the earth the most respectively, formed photogenerated current or
Voltage.
The invention have the benefit that relative to traditional Si-PIN photoelectric detector, at N+Type district adds a kind of MEMS
Microstructured layers, this structure can will transmit through the non-absorbing light of space-charge region and carry out multiple reflections, increase light propagation distance and
Photon capture ratio, increases through the absorption of light and utilization, excites photo-generated carrier more, improves the response electricity of detector
Stream.By the regulation and control diameter of pillar (hole) of micro structure, highly (degree of depth) and the cycle, different reflectance and suction can be obtained
Receive peak position, thus improve the response characteristic of specific wavelength.Relative to traditional Si-PIN photoelectric detector, at MEMS microstructured layers
Lower section also add one layer infrared enhancing non-crystalline silicon ruthenium alloy thin film, by the ruthenium content in regulation and control alloy firm, can obtain relatively
Narrow optical band gap, it is thus possible to will transmit through the near infrared light capture that MEMS microstructured layers energy is lower, wavelength is longer, the most permissible
Increase and again absorb near infrared, widen the investigative range of photodetector, improve the detection efficient of its near infrared light.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view based on MEMS micro structure infrared enhancing Si-PIN detector of the present invention；
Fig. 2 is the top view based on MEMS micro structure infrared enhancing Si-PIN detector of the present invention；
Fig. 3 is the preparation method schematic flow sheet based on MEMS micro structure infrared enhancing Si-PIN detector of the present invention；
Wherein Fig. 1 labelling: 1 is silicon intrinsic substrate, and 2 is p type island region, and 3 is MEMS microstructured layers, and 4 is P+Type district, 5 is infrared
Strengthening non-crystalline silicon ruthenium alloy thin film, 6 is bottom electrode 6, and 7 is upper electrode.
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also be by the most different concrete realities
The mode of executing is carried out or applies, the every details in this specification can also based on different viewpoints and application, without departing from
Various modification or change is carried out under the spirit of the present invention.
A kind of infrared enhancing Si-PIN detector based on MEMS micro structure, including silicon intrinsic substrate 1, is positioned at silicon intrinsic lining
MEMS microstructured layers 3 at the end 1, it is positioned at the infrared enhancing non-crystalline silicon ruthenium alloy thin film 5 below MEMS microstructured layers 3, is positioned at
Bottom electrode 6 below infrared enhancing non-crystalline silicon ruthenium alloy thin film 5, it is positioned at the p type island region 2 of zone line, position above silicon intrinsic substrate 1
Ring-shaped P in silicon intrinsic substrate 1 overlying p-type district 2 surrounding+Type district 4, being positioned at the upper electrode 7 of p type island region 2 upper surface, described MEMS is micro-
Structure sheaf 3 is the pillar by square array arrangement or hole, and detector photosurface is the upper surface of p type island region 2.
The pillar of MEMS microstructured layers 3 or a diameter of 0.5 μm of hole～2 μm, height or the degree of depth are 0.5 μm～2 μm, two
Distance between individual adjacent pillars or the hole center of circle is 1 μm～3 μm.
Infrared enhancing non-crystalline silicon ruthenium alloy thin film 5 uses RF magnetron co-sputtering method to prepare.
The optical band gap scope of infrared enhancing non-crystalline silicon ruthenium alloy thin film 5 is 0.5eV～1.5eV.
Infrared enhancing non-crystalline silicon ruthenium alloy thin film 5 thickness range is 50nm～150nm.
Described p type island region 2 forms p type island region for boron diffusing, doping, and doping content scope is 1 × 1014ion/cm3～2 ×
1016ion/cm3, junction depth is 0.2 μm～2 μm.
Described ring-shaped P+The P that type district 4 is formed for the doping of boron re-diffusion+Type district, doping content scope is 4 × 1018ion/cm3
～2 × 1019ion/cm3, junction depth is 1 μm～3.5 μm, and its junction depth is more deeper than the junction depth of described p type island region 2.
Described bottom electrode 6 and upper electrode 7 are metal film electrode, and described metal is aluminum, golden or golden evanohm, bottom electrode 6
It is 50nm～150nm with the thickness of upper electrode 7.
Described MEMS micro structure silicon layer 3 be the most thinning after monocrystalline silicon surface, use MEMS technology at silicon substrate
The square MEMS micro structure of the three-dimensional space array distribution that the back side obtains, carries out phosphorus re-diffusion or ion implanting the most again
Doping forms N+District, doping content scope is 3 × 1015ion/cm3～1 × 1017ion/cm3, junction depth is 1 μm～3 μm.
Above-mentioned preparation method based on MEMS micro structure infrared enhancing Si-PIN detector, comprises the following steps:
Step 1: be the N-type high resistant monocrystal silicon that resistivity is 2500 Ω cm～the 3500 Ω cm basis of<111>in crystal orientation
Levy substrate 1 surface oxidation growth SiO2Film layer；
Step 2: at SiO2Film surface surrounding makes P by lithography+The figure in type district 4, then carries out the doping of boron re-diffusion and forms P+
Type district 4, doping content scope is 4 × 1018ion/cm3～2 × 1019ion/cm3, junction depth is 1 μm～3.5 μm；
Step 3: at SiO2Film surface makes p type island region 2 figure by lithography, then carries out boron diffusing, doping and forms p type island region 2, mixes
Miscellaneous concentration range is 1 × 1014ion/cm3～2 × 1016ion/cm3, junction depth is 0.2 μm～2 μm；
Step 4: silicon intrinsic substrate 1 back side is carried out thinning, grind, polish, make that the thickness of silicon intrinsic substrate 1 is thinning is
250 μm～350 μm, then the back side is carried out MEMS technology formation MEMS microstructured layers 3；
Step 5: the substrate back with MEMS microstructured layers is carried out the doping of phosphorus re-diffusion and forms N+Type district, doping content
Scope is 3 × 1015ion/cm3～1 × 1017ion/cm3, junction depth is 1 μm～3 μm；
Step 6: use RF magnetron co-sputtering method to deposit one layer infrared enhancing non-crystalline silicon ruthenium on MEMS microstructured layers 3
Alloy firm 5；
Step 7: upper electrode 7 and the preparation of bottom electrode 6.
Present invention N overleaf on the basis of traditional Si-PIN detector+Type district add a floor MEMS microstructured layers and
One layer infrared enhancing non-crystalline silicon ruthenium alloy thin film.
MEMS micro structure silicon is that a kind of employing miromaching obtains three-dimensional space array on silicon crystal surface
The silicon crystal surface micro-structure of distribution, be a kind of physical dimension in micron dimension, and be the equally distributed micro structure of large area.
The most small structure can make incident illumination reflect at microstructured layers multiple reflections, the transmission light absorbing the most depleted layer
Heavily absorb, the absorbance of light can be increased, improve the responsiveness of photodetector.And by regulating and controlling the pillar of micro structure
The diameter of (hole), highly (degree of depth) and cycle, can obtain different reflectance and absworption peak position, thus improve certain wave
Long responsiveness.
Infrared enhancing non-crystalline silicon ruthenium alloy thin film has that absorptivity is high, energy gap is adjustable, electron temperature coefficient is big, can
Large area low temperature (< 400 DEG C) film forming, preparation technology simple with silicon semiconductor process compatible etc. feature, by regulating and controlling non-crystalline silicon ruthenium
In alloy firm, the content of ruthenium and the thickness of thin film, regulate and control the optical band gap of thin film so that it is optical band gap scope control exists
0.5eV～1.5eV, makes the energy gap of silicon materials narrow, and the light of such long wavelength also can be absorbed, and is applied at silicon photoelectricity
Detector field, can improve the responsiveness of detector, extends detector near infrared spectrum response range.
Described detector can not only strengthen the absorption to visible ray and near infrared light, it is also possible to spread spectrum response model
Enclose, there is near infrared absorption enhancing, response spectrum wide ranges, responsiveness advantages of higher.
The basic functional principle of the present invention is: when incident illumination enters the space-charge region of Si-PIN photodetector, can swash
Sending out the electron-hole pair of space-charge region, electronics and hole move to the two poles of the earth the most respectively, formed photogenerated current or
Voltage.
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Any ripe
Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by the personage knowing this technology.Cause
This, have usually intellectual and completed under technological thought without departing from disclosed spirit in all art
All equivalence modify or change, must be contained by the claim of the present invention.
Claims (10)
1. an infrared enhancing Si-PIN detector based on MEMS micro structure, it is characterised in that: include silicon intrinsic substrate, be positioned at
MEMS microstructured layers below silicon intrinsic substrate, be positioned at the infrared enhancing non-crystalline silicon ruthenium alloy thin film below MEMS microstructured layers,
It is positioned at the bottom electrode below infrared enhancing non-crystalline silicon ruthenium alloy thin film, is positioned at the p type island region of zone line, position above silicon intrinsic substrate
Ring-shaped P in silicon intrinsic substrate overlying p-type district surrounding+Type district, it is positioned at the upper electrode of p type island region upper surface, described MEMS micro structure
Layer is the pillar by square array arrangement or hole, and detector photosurface is the upper surface of p type island region.
Infrared enhancing Si-PIN detector based on MEMS micro structure the most according to claim 1, it is characterised in that: MEMS
The pillar of microstructured layers or a diameter of 0.5 μm of hole～2 μm, height or the degree of depth are 0.5 μm～2 μm, two adjacent pillars or
Distance between the hole center of circle is 1 μm～3 μm.
Infrared enhancing Si-PIN detector based on MEMS micro structure the most according to claim 1, it is characterised in that: infrared
Strengthening non-crystalline silicon ruthenium alloy thin film uses RF magnetron co-sputtering method to prepare.
Infrared enhancing Si-PIN detector based on MEMS micro structure the most according to claim 3, it is characterised in that: infrared
The optical band gap scope strengthening non-crystalline silicon ruthenium alloy thin film is 0.5eV～1.5eV.
Infrared enhancing Si-PIN detector based on MEMS micro structure the most according to claim 3, it is characterised in that: infrared
Strengthening non-crystalline silicon ruthenium alloy film thickness scope is 50nm～150nm.
Infrared enhancing Si-PIN detector based on MEMS micro structure the most according to claim 1, it is characterised in that: described
P type island region is that boron diffusing, doping forms p type island region, and doping content scope is 1 × 1014ion/cm3～2 × 1016ion/cm3, junction depth is
0.2 μm～2 μm.
Infrared enhancing Si-PIN detector based on MEMS micro structure the most according to claim 1, it is characterised in that: described
Ring-shaped P+Type district is the P that the doping of boron re-diffusion is formed+Type district, doping content scope is 4 × 1018ion/cm3～2 × 1019ion/
cm3, junction depth is 1 μm～3.5 μm, and its junction depth is more deeper than the junction depth of described p type island region.
Infrared enhancing Si-PIN detector based on MEMS micro structure the most according to claim 1, it is characterised in that: described
Bottom electrode and the extremely metal film electrode that powers on, described metal is aluminum, golden or golden evanohm, and the thickness of bottom electrode and upper electrode is
50nm～150nm.
Infrared enhancing Si-PIN detector based on MEMS micro structure the most according to claim 1, it is characterised in that: described
MEMS micro structure silicon layer be the most thinning after monocrystalline silicon surface, use the three-dimensional that obtains at the silicon substrate back side of MEMS technology
The square MEMS micro structure of solid space array distribution, carries out phosphorus re-diffusion the most again or ion implantation doping forms N+District,
Doping content scope is 3 × 1015ion/cm3～1 × 1017ion/cm3, junction depth is 1 μm～3 μm.
10. claim 1 to 9 any one preparation method based on MEMS micro structure infrared enhancing Si-PIN detector, it is special
Levy and be to comprise the following steps:
Step 1: be the N-type high resistant monocrystal silicon intrinsic that resistivity is 2500 Ω cm～the 3500 Ω cm lining of<111>in crystal orientation
Basal surface oxidation growth SiO2Film layer；
Step 2: at SiO2Film surface surrounding makes P by lithography+The figure in type district, then carries out the doping of boron re-diffusion and forms P+Type district,
Doping content scope is 4 × 1018ion/cm3～2 × 1019ion/cm3, junction depth is 1 μm～3.5 μm；
Step 3: at SiO2Film surface makes p type island region figure by lithography, then carries out boron diffusing, doping and forms p type island region, doping content model
Enclose is 1 × 1014ion/cm3～2 × 1016ion/cm3, junction depth is 0.2 μm～2 μm；
Step 4: silicon intrinsic substrate back is carried out thinning, grind, polish, make the thickness of silicon intrinsic substrate thinning be 250 μm～
350 μm, then the back side is carried out MEMS technology formation MEMS microstructured layers；
Step 5: the substrate back with MEMS microstructured layers is carried out the doping of phosphorus re-diffusion and forms N+Type district, doping content scope
It is 3 × 1015ion/cm3～1 × 1017ion/cm3, junction depth is 1 μm～3 μm；
Step 6: use RF magnetron co-sputtering method to deposit one layer infrared enhancing non-crystalline silicon ruthenium alloy on MEMS microstructured layers
Thin film 5；
Step 7: upper electrode and the preparation of bottom electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610739151.8A CN106328753A (en) | 2016-08-26 | 2016-08-26 | MEMS microstructure-based infrared-strengthened Si-PIN detector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610739151.8A CN106328753A (en) | 2016-08-26 | 2016-08-26 | MEMS microstructure-based infrared-strengthened Si-PIN detector and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106328753A true CN106328753A (en) | 2017-01-11 |
Family
ID=57791804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610739151.8A Pending CN106328753A (en) | 2016-08-26 | 2016-08-26 | MEMS microstructure-based infrared-strengthened Si-PIN detector and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106328753A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111133590A (en) * | 2017-07-21 | 2020-05-08 | 文和文森斯设备公司 | Microstructure enhanced light-absorbing sensitive devices |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050103983A1 (en) * | 2003-11-18 | 2005-05-19 | Matsushita Electric Industrial Co., Ltd. | Photodetector |
| CN103400887A (en) * | 2013-08-08 | 2013-11-20 | 电子科技大学 | Backside illuminated Si-PIN photoelectric detector and preparation method thereof |
| CN105115599A (en) * | 2015-08-17 | 2015-12-02 | 电子科技大学 | An Si-PIN four-quadrant photoelectric detector based on MEMS microstructure silicon and a manufacturing method thereof |
| CN105185845A (en) * | 2015-08-17 | 2015-12-23 | 电子科技大学 | Si-PIN photodetector introducing micro-structure silicon in P layer and N layer and preparation method thereof |
-
2016
- 2016-08-26 CN CN201610739151.8A patent/CN106328753A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050103983A1 (en) * | 2003-11-18 | 2005-05-19 | Matsushita Electric Industrial Co., Ltd. | Photodetector |
| CN103400887A (en) * | 2013-08-08 | 2013-11-20 | 电子科技大学 | Backside illuminated Si-PIN photoelectric detector and preparation method thereof |
| CN105115599A (en) * | 2015-08-17 | 2015-12-02 | 电子科技大学 | An Si-PIN four-quadrant photoelectric detector based on MEMS microstructure silicon and a manufacturing method thereof |
| CN105185845A (en) * | 2015-08-17 | 2015-12-23 | 电子科技大学 | Si-PIN photodetector introducing micro-structure silicon in P layer and N layer and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| ANRAN GUO: "Band engineering of amorphous silicon ruthenium thin film and itsnear-infrared absorption enhancement combined with nano-holes pattern on back surface of silicon substrate", 《APPLIED SURFACE SCIENCE》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111133590A (en) * | 2017-07-21 | 2020-05-08 | 文和文森斯设备公司 | Microstructure enhanced light-absorbing sensitive devices |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106206831A (en) | Based on femtosecond laser ablation infrared enhancing Si PIN detector and preparation method thereof | |
| US20120068289A1 (en) | Devices Having Enhanced Electromagnetic Radiation Detection and Associated Methods | |
| CN105706316B (en) | High contrast grating opto-electronic device | |
| CN102176470B (en) | Back-illuminated Si-PIN photoelectric detector taking black silicon material as photosensitive layer and manufacturing method thereof | |
| Gao et al. | High speed surface illuminated Si photodiode using microstructured holes for absorption enhancements at 900–1000 nm wavelength | |
| CN103137773B (en) | Si-APD photodetector being photosensitive layer with black silicon and preparation method thereof | |
| CN101714591A (en) | Method for manufacturing silicon photoelectric diode | |
| JP2011523226A (en) | Solar volume structure | |
| CN102246324A (en) | Back contact photovoltaic solar cells with grooves | |
| CN102201487B (en) | Method for optimizing light gathering ability of micro-lens array of back-illuminated infrared detector | |
| CN101950775A (en) | Method for manufacturing double diffusion type optical avalanche diode with incident light on back surface by adopting epitaxial equipment | |
| CN102903781A (en) | Silicon-based near infrared photoelectric detector structure and manufacturing method thereof | |
| CN106057957B (en) | Avalanche photodide with periodic nano-structure | |
| CN105789366A (en) | Silicon-based hybrid integrated avalanche photodetector | |
| CN105115599A (en) | An Si-PIN four-quadrant photoelectric detector based on MEMS microstructure silicon and a manufacturing method thereof | |
| CN109216495A (en) | Avalanche photodetector, production method and laser radar system | |
| CN106601859A (en) | Quantum-dot wide-spectrum single-photon detector and detection method thereof | |
| CN105185845A (en) | Si-PIN photodetector introducing micro-structure silicon in P layer and N layer and preparation method thereof | |
| CN110398794B (en) | Silicon-based wave absorber with quantitatively-adjustable working wavelength and preparation method thereof | |
| CN106784121B (en) | Surface plasmons photodetector and preparation method thereof | |
| CN101661137B (en) | Method for making silicon waveguide photoelectric converter used in 1.55mu m communication wave band | |
| CN106129168A (en) | Infrared enhancing Si PIN detector and preparation method thereof is etched based on metal inducement | |
| CN106024922B (en) | Phototransistor based on GeSn materials and preparation method thereof | |
| CN206210817U (en) | Quantum dot wide range single-photon detector | |
| CN106328753A (en) | MEMS microstructure-based infrared-strengthened Si-PIN detector and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170111 |
|
| WD01 | Invention patent application deemed withdrawn after publication |