CN106601859A - Quantum-dot wide-spectrum single-photon detector and detection method thereof - Google Patents
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 57
- 238000001514 detection method Methods 0.000 title claims abstract description 23
- 238000001228 spectrum Methods 0.000 title claims abstract description 8
- 229910021426 porous silicon Inorganic materials 0.000 claims abstract description 29
- 230000005684 electric field Effects 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 12
- 230000009471 action Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 230000003321 amplification Effects 0.000 claims description 5
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 5
- 230000005685 electric field effect Effects 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 230000035772 mutation Effects 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 7
- 230000008859 change Effects 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000010791 quenching Methods 0.000 abstract description 5
- 230000000171 quenching effect Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract 3
- 239000000969 carrier Substances 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002189 fluorescence spectrum Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
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Abstract
The invention discloses a quantum-dot wide-spectrum single-photon detector and a detection method thereof. A singe photon from visible light to an infrared band is input to an active region of a device, a quantum dot layer absorbs the photon and then generates an exciton, the exciton is separated under the effect of a heterojunction abrupt change electric field of the quantum dot layer and a porous silicon layer, an electron hole pair is formed, and carriers move towards an electrode under the effect of the electric field. Under a reversed bias voltage in a Geiger mode, a PN node composed of a heavily-doped N+ type layer and a heavily-doped P+ type layer forms a long depletion region, carriers collide with each other in an accelerated way under the effect of a high electric field, the gain is amplified, and a detectable current is formed. The detector and the detection method thereof have the advantages that the detection efficiency is high, the temperature is kept at room temperature, the spectrum is wide, the detector and method are compatible with a CMOS technology of an integrated circuit, quenching control and a playback circuit are integrated in a single chip, and the application prospect in the market of few-photon and single-photon detectors is wide.
Description
Technical field：
The invention belongs to the low light signals Detection Techniques field in optical detection, more particularly to a kind of quantum dot wide range monochromatic light
Sub- detector and its detection method.
Background technology：
Single photon is the most low light signals that can be transmitted, in astronomy, quantum communications, laser signal and biomedical detection
It is widely used Deng field, observable unimolecule or monatomic behavior, in also apply be applicable to quantum key distribution technology.In amount
In son communication, based on the quantum-key distribution communication technology, encoded using the quantum state of single photon, according to Heisenberg's indeterminacy
Principle, is capable of achieving the transmission that is kept absolutely secret of information, has very strong advantage in information communication.Traditional single-photon detector, state
It is inside and outside that photomultiplier (PMT) is usually used, with high-gain, photosurface be big and the little advantage of dark current, but it is operated in kilovolt
High voltage, easily affected by magnetic fields, system bulk is big, and near infrared band detection efficient is low, is visited by the 40% of typically seen smooth 500nm
Survey efficiency and drop to the 2% of 1550nm.In recent years photomultiplier is gradually by the avalanche semiconductor light being operated under Geiger mode angular position digitizer
Electric diode single-photon detector replaces, and mainly has avalanche silicon diode single-photon detector, InGaAs avalanche diode monochromatic lights
Sub- detector etc..But these single-photon detectors can only all detect some wave band, it is impossible to while realizing that multiband is detected.
Avalanche photodide single-photon detector is based on semiconductor PN, in reverse biased higher than device electric breakdown strength
Work under Geiger mode angular position digitizer, after photon is absorbed, photo-generated carrier accelerates under reverse bias collision to cause gain avalanche, and causing can
The high current of detecting.Silicon avalanche photodiode single-photon detector has very high Quantum detection efficiency and low in visible light wave range
Noise, in 600nm, detection efficient can be up to 70%, but but more difficult in the detection of infrared band.Generally in infrared waves
Section is realized with detectors such as InGaAs/InP avalanche photodides, superconducting nano-wire or upper conversions, but such detector is logical
Often detection efficient is not high, can only achieve close 20% detection efficient, and because dark count rate is high, need to be operated in extremely low temperature
Under, it is impossible to realize that room temperature is detected.
In the avalanche diode single-photon detector of various semi-conducting materials, avalanche silicon diode single-photon detector technology
The most ripe, the company such as Perkin-Elmer has realized commercialization, high in visible light wave range detection efficient.But due to silicon materials sheet
Energy gap 1.12eV of body, a length of 1100nm of cut-off probing wave is not suitable for infrared photon detection.But silicon materials are that standard is integrated
Circuit CMOS making technology selected materials, silicon device be easy to it is integrated with other photoelectric devices on the same chip.Therefore how
Combine with the light-sensitive material that can detect infrared band with reference to the high-gain of avalanche silicon diode single-photon detector, just become
Research and market focus
The information for being disclosed in the background section is merely intended to increase the understanding of the general background to the present invention, and should not
When the prior art for being considered to recognize or imply in any form the information structure well known to persons skilled in the art.
The content of the invention：
It is an object of the invention to provide a kind of quantum dot wide range single-photon detector and its detection method, on overcoming
State defect of the prior art.
For achieving the above object, the invention provides a kind of quantum dot wide range single-photon detector, including：Light absorbing zone,
Avalanche multiplication structure layer；The light absorbing zone includes quantum dot layer, porous silicon layer, and the quantum dot layer lower section is provided with porous silicon
Layer；The quantum dot layer, for absorbing photon；The porous silicon layer, for absorbing the host material of photon as quantum dot；Institute
Avalanche multiplication structure layer is stated for plane avalanche silicon diode, achievable operating on low voltage pattern；And it is compatible with CMOS technology；Institute
State avalanche silicon diode and be arranged on porous silicon layer lower section, the avalanche silicon diode includes heavy doping N+ type layers, heavy doping P+ type
Floor, P-type layer, heavily doped P-type buried layer, N-type silicon substrate, Au negative electrodes, Au anodes, heavy doping P+ areas, heavy doping N++ areas；The P
Type layer is long on heavily doped P-type buried layer, the heavily doped P-type buried layer, for guaranteeing the low-resistance of current path, at structure bottom
Portion forms electrode layer；The heavy doping N+ types layer is embedded in P-type layer, for producing Pen Xing areas, forms virtual protection ring；The P
Injection heavy doping P+ type layer in type layer, for determining active area；The heavy doping P+ areas 10 are heat sink there is provided electrode contact；It is described
Au negative electrodes 8, Au anodes 9 form electrode；The heavy doping N++ head of district in N-type silicon substrate, for by single-photon detector and core
Peripheral devices electric isolation on piece.
Preferably, in above-mentioned technical proposal, the PN junction that heavy doping N+ types layer and heavy doping P+ type layer are constituted forms length and exhausts
Area, for gain avalanche amplification.
Preferably, in above-mentioned technical proposal, quantum dot layer is PbS quantum layer, detectable visible infrared band it is double
Wave band wide spectrum.
The using method of quantum dot wide range single-photon detector, its step is：
(1) visible ray is to the single-photon incident of infrared band to device active region, and it is sharp that quantum dot layer absorbs generation after photon
Son, exciton is separated after by mutation electric field action of the quantum dot with porous silicon layer Bimaterial in terface, forms electronics empty
Cave pair, carrier is under electric field action towards electrode movement；
(2) device is under the reversed bias voltage of Geiger mode angular position digitizer, the PN junction shape that heavy doping N+ types layer and heavy doping P+ type layer are constituted
Growth depletion region, when carrier moving under high electric field effect to, accelerating collision to form more multiple carrier herein, gain is amplified,
Eventually forming can detecting current.
Compared with prior art, the present invention has the advantages that：
The high-gain and PbS quantum of silicon avalanche photodiode detection are combined in visible infrared waveband absorbing
Adjustability, can realize visible and infrared double-waveband single photon detection, with detection efficient height, room temperature, wide spectrum and integrated
Circuit CMOS technology is compatible, can control and the integrated advantage on a single chip of reading circuit such as quenching, in a small amount of photon and list
Photon detector has a extensive future on market.
Description of the drawings：
Fig. 1 is the CMOS technology cross-sectional view of quantum dot wide range single-photon detector of the present invention；
Fig. 2 is the schematic diagram of device light absorbing zone PbS quantum of the present invention and porous silicon layer；
Fig. 3 makes array schematic diagram for single-photon detector of the present invention；
Reference is：1- quantum dot layers, 2- porous silicon layers, 3- heavy doping N+ type layers, 4- heavy doping P+ type layers, 5-P types
Floor, 6- heavily doped P-type buried layers, 7-N type silicon substrates, 8-Au negative electrodes, 9-Au anodes, 10- heavy doping P+ areas, 11- heavy doping N++
Area.
Specific embodiment：
The specific embodiment of the present invention is described in detail below, it is to be understood that protection scope of the present invention is not
Limited by specific embodiment.
Explicitly indicate that unless otherwise other, otherwise in entire disclosure and claims, term " including " or its change
Change such as "comprising" or " including " etc. and will be understood to comprise stated element or part, and do not exclude other units
Part or other parts.
As shown in figure 1, a kind of quantum dot wide range single-photon detector, including：Light absorbing zone, avalanche multiplication structure layer；Institute
Light absorbing zone is stated including quantum dot layer 1, porous silicon layer 2, the lower section of the quantum dot layer 1 is provided with porous silicon layer 2；The quantum dot
Layer 1, for absorbing photon；The porous silicon layer 2, for absorbing the host material of photon as quantum dot；The avalanche multiplication
Structure sheaf is plane avalanche silicon diode, and the avalanche silicon diode is arranged on the lower section of porous silicon layer 2, the pole of silicon snowslide two
Pipe include heavy doping N+ types layer 3, heavy doping P+ type layer 4, P-type layer 5, heavily doped P-type buried layer 6, N-type silicon substrate 7, Au negative electrodes 8,
Au anodes 9, heavy doping P+ areas 10, heavy doping N++ areas 11；The P-type layer 5 is grown on heavily doped P-type buried layer 6, described heavily doped
Miscellaneous p-type buried layer 6, for guaranteeing the low-resistance of current path, in structural base electrode layer is formed；The heavy doping N+ types layer 3 is embedding
Enter P-type layer 5, for producing Pen Xing areas, form virtual protection ring；Injection heavy doping P+ type layer 4 in the P-type layer 5, for certainly
Determine active area；The heavy doping P+ areas 10 are heat sink there is provided electrode contact；The Au negative electrodes 8, Au anodes 9 form electrode；It is described
Heavy doping N++ areas 11 are grown in N-type silicon substrate 7, for by peripheral devices electric isolation on single-photon detector and chip.It is heavily doped
The PN junction that miscellaneous N+ types layer 3 and heavy doping P+ type layer 4 are constituted forms long depletion region, for gain avalanche amplification.Quantum dot layer 1 is
PbS quantum layer, the two waveband wide spectrum of detectable visible infrared band.
In order to detect the arrival of single photon, Geiger mode angular position digitizer need to be operated in, a little higher than breakdown voltage of device operating voltages, linearly
Though pattern can amplify electric current, gain is insufficient to greatly, need to adopt the Geiger mode angular position digitizer that the huge gain of snowslide occurs.Consumption can be adjusted
Area's electric field design to the greatest extent so that breakdown voltage is in 20-40V.Apply reverse biased to device, as visible infrared band 0.7-2.5
A single photon in micron is coupled in quantum dot, and quantum dot absorbs photon and produces exciton, and exciton runs into the heterogeneous material of porous silicon
Separate after material, form electron hole pair；Carrier is moved under electric field action towards opposite electrode.Wherein carrier is running into
At the PN junction that heavy doping N+ types layer 3 and heavy doping P+ type layer 4 are formed, there is extremely strong electric field in depletion region, depletion region is normally controlled in 1
To 5 microns, carrier accelerates and occurs impact avalanche amplification, eventually forms the electric current that can be detected.
Avalanche gain amplification process will be continued for, so in order to detect next single photon, need additional quenching and again
Charging circuit.Quenching circuit is divided into and being actively and passively quenched, and passive quenching applies a bias less than breakdown voltage, forces
Gain is set to be inhibited.If carrier is photoproduction produced, the edge of snowslide pulse is exactly the photon arrival time detected,
This electric current will be continued for until snowslide is suppressed by low-voltage.
PbS quantum is a kind of three-dimensional quantum limits nano-structure material, and body material energy gap is less, by energy band work
Quantum dot prepared by journey can adjust energy gap.During synthesis quantum dot, change the size of quantum dot, quantum dot can absorb can
See the photon of infrared wavelength.Quantum dot size is bigger, and absworption peak gets over red shift, and absorption spectra is between 0.8-2.5 microns.Quantum dot
Typically prepared using liquid phase process under inert conditions, quantum dot is dispersed in hexane by Coated with Oleic Acid.According to required
Quantum dot absorbs target peak, adjusts size, and optics need to be carried out by fluorescence spectrum and optical absorption spectra per a batch of quantum dot
Characterize.
Porous silicon is a kind of spongelike structure new material with nano-silicon cluster as skeleton, by pore structure and support knot
Structure is constituted.Porous silicon pore size determines by Parameter Conditions when preparing, such as etchant concentration, etching solution current density, etching
Current system, silicon chip type etc..The present invention is prepared in implementing with electrochemical erosion method, to silicon chip in hydrofluoric acid and ethanol solution
Apply to prepare porous silicon less than the electric current of electropolishing current density, using platinum electrode or graphite as negative electrode, silicon chip is used as anode.
The front silicon chip back side of preparation and front are not made the region of porous silicon and are protected by mask and wax.
As shown in Fig. 2 quantum dot is loaded onto in porous silicon, in actual fabrication process porous silicon hole and upper strata all
Quantum dot is distributed with.By spin coating, quantum dot is loaded onto on porous silicon.This new porous silicon surface for processing is hydrophobic
, by organic solvent solution humidifying, the dispersion of quantum dot can be easy to.In preparation process, PbS amounts can be mounted with by riving
The porous silica material of son point, obtains the information of the depth of quantum dot access aperture, and electron energy dispersion spectrum can be also carried out to cross section
Experimental analysis.Can become apparent from accordingly obtaining silicon, lead and other elements distributed intelligence, usual quantum dot can arrive at the bottom of porous silicon
Portion.
It is following further the quantum dot of the different different materials system of size and energy gap to be introduced into porous silicon place
Main structure, detects the single photon signal of wider wave band；Realize that single band, two waveband absorb response to the covering that overall with is composed, will have
Help the integration of night vision and conventional visible detection.And alignment and planar array can be developed into from unit component, such as Fig. 3 institutes
Show, and put with subsequent probe circuit, amplifier and buffer etc. and be integrated on same silicon chip, this will optimization focal plane arrays (FPA)
Design.The device design space resolution ratio for avoiding present separate type is low, the uneven deficiency of thermal coefficient of expansion.
The using method of quantum dot wide range single-photon detector, its step is：
(1) visible ray is to the single-photon incident of infrared band to device active region, and it is sharp that quantum dot layer 1 absorbs generation after photon
Son, exciton is being separated by quantum dot with after the mutation electric field action of the Bimaterial in terface of porous silicon layer 2, forms electronics empty
Cave pair, carrier is under electric field action towards electrode movement；
(2) device is under the reversed bias voltage of Geiger mode angular position digitizer, the PN junction that heavy doping N+ types layer 3 and heavy doping P+ type layer 4 are constituted
Long depletion region is formed, when carrier moving is to herein, accelerates collision to form more multiple carrier under high electric field effect, gain is put
Greatly, eventually forming can detecting current.
It is aforementioned to the present invention specific illustrative embodiment description be in order to illustrate and illustration purpose.These descriptions
It is not wishing to limit the invention to disclosed precise forms, and it will be apparent that according to above-mentioned teaching, can be much changed
And change.The purpose of selecting and describing the exemplary embodiment is that explaining that the certain principles and its reality of the present invention should
With so that those skilled in the art can realize and using the present invention a variety of exemplaries and
A variety of selections and change.The scope of the present invention is intended to be limited by claims and its equivalents.
Claims (4)
1. quantum dot wide range single-photon detector, it is characterised in that：Including light absorbing zone, avalanche multiplication structure layer；The light is inhaled
Receiving layer includes quantum dot layer, porous silicon layer, and the quantum dot layer lower section is provided with porous silicon layer；The quantum dot layer, for inhaling
Receive photon；The porous silicon layer, for absorbing the host material of photon as quantum dot；The avalanche multiplication structure layer is plane
Type avalanche silicon diode, the avalanche silicon diode is arranged on porous silicon layer lower section, and the avalanche silicon diode includes heavy doping N
+ type floor, heavy doping P+ type floor, P-type layer, heavily doped P-type buried layer, N-type silicon substrate, Au negative electrodes, Au anodes, heavy doping P+ areas,
Heavy doping N++ areas；The P-type layer length on heavily doped P-type buried layer, the heavily doped P-type buried layer, for guarantee electric current lead to
The low-resistance on road, in structural base electrode layer is formed；The heavy doping N+ types layer is embedded in P-type layer, for producing Pen Xing areas, is formed
Virtual protection ring；Injection heavy doping P+ type layer in the P-type layer, for determining active area；The heavy doping P+ areas 10 are heat sink to be carried
Be supplied with electric power pole contact；The Au negative electrodes 8, Au anodes 9 form electrode；The heavy doping N++ head of district is used in N-type silicon substrate
By peripheral devices electric isolation on single-photon detector and chip.
2. quantum dot wide range single-photon detector according to claim 1, it is characterised in that：The quantum dot layer is PbS
Quantum dot layer, the two waveband wide spectrum of detectable visible infrared band.
3. quantum dot wide range single-photon detector according to claim 1, it is characterised in that：Heavy doping N+ types layer and heavily doped
The PN junction that miscellaneous P+ type layer is constituted forms long depletion region, for gain avalanche amplification.
4. the detection method of quantum dot wide range single-photon detector, its step is：
(1) visible ray is to the single-photon incident of infrared band to device active region, and quantum dot layer to absorb and produce exciton after photon, sharp
Son is separated after by mutation electric field action of the quantum dot with porous silicon layer Bimaterial in terface, forms electron hole pair,
Carrier is under electric field action towards electrode movement；
(2) under the reversed bias voltage of Geiger mode angular position digitizer, the PN junction that heavy doping N+ types layer and heavy doping P+ type layer are constituted forms length to device
Depletion region, when carrier moving under high electric field effect to, accelerating collision to form more multiple carrier herein, gain is amplified, finally
Formation can detecting current.
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| CN201611088804.7A CN106601859B (en) | 2016-12-01 | 2016-12-01 | Quantum dot broad spectrum single photon detector and detection method thereof |
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Cited By (6)
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| CN112086531A (en) * | 2020-09-07 | 2020-12-15 | 深圳市绿聚墨电子科技有限公司 | Molecular material component applied to high-sensitivity photoelectric detector and manufacturing method thereof |
| CN113299787A (en) * | 2021-05-21 | 2021-08-24 | 武汉新芯集成电路制造有限公司 | Semiconductor device and method for manufacturing the same |
| WO2022170476A1 (en) * | 2021-02-09 | 2022-08-18 | 深圳市大疆创新科技有限公司 | Laser receiving circuit and control method therefor, ranging device, and mobile platform |
| CN116598369A (en) * | 2023-07-18 | 2023-08-15 | 北京邮电大学 | Low-noise single photon detector and preparation method thereof |
| EP4290591A1 (en) * | 2022-06-09 | 2023-12-13 | Infineon Technologies AG | Time-of-flight image sensor with quantum dot photodetectors |
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| EP4290591A1 (en) * | 2022-06-09 | 2023-12-13 | Infineon Technologies AG | Time-of-flight image sensor with quantum dot photodetectors |
| CN116598369A (en) * | 2023-07-18 | 2023-08-15 | 北京邮电大学 | Low-noise single photon detector and preparation method thereof |
| CN116598369B (en) * | 2023-07-18 | 2023-09-22 | 北京邮电大学 | Low-noise single photon detector and preparation method thereof |
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