CN109285901A - A kind of CMOS SPAD photoelectric device of the deep N-well with inverse dopant profiles - Google Patents
A kind of CMOS SPAD photoelectric device of the deep N-well with inverse dopant profiles Download PDFInfo
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- 239000002019 doping agent Substances 0.000 title claims abstract description 27
- 238000001514 detection method Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000035755 proliferation Effects 0.000 claims abstract description 5
- 230000000694 effects Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 230000003667 anti-reflective effect Effects 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000004088 simulation Methods 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 239000004744 fabric Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 6
- 230000004043 responsiveness Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 101000822633 Pseudomonas sp 3-succinoylsemialdehyde-pyridine dehydrogenase Proteins 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
Abstract
A kind of CMOS SPAD photoelectric device of deep N-well with inverse dopant profiles is claimed in the present invention; including substrate P; deep N-well, center N trap and P+ layers are provided in the substrate P; the deep N-well both sides are provided with N trap; the deep N-well uses inverse dopant profiles structure, i.e., lower close to the deep N-well concentration of device surface, and as longitudinal depth increase deep N-well concentration far from device surface is higher; there are horizontal proliferation between two sides N trap in deep N-well and center N trap, form n in PN junction edge‑Virtual protection ring; device inside is injected when incident photon mainly to be absorbed by deep N-well; most of photons can be utilized to form photo-generated carrier by P+ layers/center N trap knot; only a few photons penetrate deep N-well and form photo-generated carrier in substrate P, and the present invention mainly starts in terms of increasing the quantum efficiency two of thickness and optimised devices of device uptake zone to improve the photon detection efficiency of device.
Description
Technical field
The invention belongs to semiconductor optoelectronic detection and sensory fields, are related to the structure design of APD photoelectric device, especially relate to
And a kind of design of the CMOS SPAD photoelectric device with high photon detection efficiency.
Background technique
Single-photon avalanche diode (Single Photo Avalanche Diode) is since it is with single-photon sensitivity
Characteristic and the neck such as be widely used in automotive electronics, three-dimensional imaging, instrument and meter, bio-photon, fluorescence lifetime imaging
Domain, it is a kind of semiconductor light electrical resistivity survey using PN junction structure to work under Geiger mode angular position digitizer (reversed bias voltage is greater than breakdown voltage)
Survey device.When photon irradiation is to PN junction, photo-generated carrier is accelerated to be moved to avalanche region and generates multiplier effect, so that single photon
Heavy current pulse signal can be triggered.It is also higher and higher to the performance requirement of SPAD with the expansion of application field, it is especially right
The demand of the SPAD device of high detection efficient is being stepped up.
Many researchers conduct in-depth research silicon substrate SPAD device.However since silicon is in visible wavelength range
The interior absorption coefficient of light is smaller, and the performance of silicon substrate SPAD device is significantly limited.For example, 700nm wavelength in silicon
The penetration depth of light is about 5 μm, the depletion region thickness much larger than traditional SPAD, this results in generating most of current-carrying in the substrate
Son.In order to improve detection efficient and responsiveness, it has been suggested that binode SPAD structure widens the thickness of its depletion region and uptake zone,
So that device performance is further promoted, the territory of its engineer application is constantly widened.
(but use the technology that device photo-generated carrier when avalanche breakdown occurs is made to be easy to happen band-to-band-tunneling effect
It answers, increases the value of device dark current, be unfavorable for improving the noiseproof feature of device.)
Summary of the invention
Present invention seek to address that the above problem of the prior art.Propose a kind of dividing with inverse doping for raising detection efficient
The CMOS SPAD phototube of the deep N-well of cloth.Technical scheme is as follows:
A kind of CMOS SPAD photoelectric device of the deep N-well with inverse dopant profiles, including substrate P are set on the P substrate
It is equipped with deep N-well, center N trap and P+ layers, the deep N-well both sides are provided with N trap, and the deep N-well uses inverse dopant profiles structure,
It is i.e. lower close to the deep N-well concentration of device surface, and as longitudinal depth increase deep N-well concentration far from device surface is higher,
There are horizontal proliferation between two sides N trap in deep N-well and center N trap, form n in PN junction edge-Virtual protection ring, when
Incident photon is injected device inside and is mainly absorbed by deep N-well, and most of photons can utilize shape by P+ layers/center N trap knot
At photo-generated carrier, only a few photons penetrate deep N-well and form photo-generated carrier in substrate P,
Further, described P+ layers with a thickness of 1.5 μm -2.5 μm, for increasing PN junction depth.
Further, P+ layers of the concentration and thickness, the concentration of center N well layer, the thickness of inverse dopant profiles deep N-well
Spending parameter is 3.5 μm -4.5 μm, is adjustable.
Further, P+ layers of the concentration and thickness, the concentration of center N well layer, the thickness of inverse dopant profiles deep N-well
The foundation of degree Parameter adjustable is: being analyzed first by main performance index of the theoretical model to device, substantially determines device
Major parameter；It is analyzed again by technique and device simulation, simulating, verifying is carried out to above-mentioned major parameter, obtains difference
Quantum efficiency characteristic curve, to obtain photon detection efficiency characteristic curve.
Further, the concentration range of the inverse dopant profiles deep N-well is 1 × 1016/cm-3-6×1016/cm-3。
Further, the CMOS SPAD photoelectric device surface is additionally provided with one layer of anti-reflective film, for improving device amount
Sub- efficiency.
Further, the anti-reflective film uses SiO2。
It advantages of the present invention and has the beneficial effect that:
The photonic absorption area of common SPAD device is to cause a part of photon to generate current-carrying in substrate using relatively thin N trap
Son, PN junction substantially reduce the utilization rate of incident photon, are unfavorable for device and fully absorb photon, thus its detection efficient compared with
It is low.The design method is to be produced on P+/center N trap knot in the deep N trap of inverse dopant profiles, and two are controlled inside deep N-well
N trap is added in side, so that forming virtual protection ring at PN junction edge.Compared with conventional CMOS SPAD device, designed by the present invention
Device significantly enhance the detection efficient of device.The device of novel high detection efficient CMOS SAPD proposed by the invention
Part structure can effectively overcome the shortcomings of traditional cmos SPAD device in design, and device structure design is as follows:
SPAD device designed by the present invention is P+/center N trap/inverse doping deep N-well/substrate P planar structure.P+/in
Heart N trap constitute device avalanche region, photo-generated carrier collide in this area ionization so that device occur avalanche breakdown, from
And a heavy current pulse signal is formed in device output end mouth；Inverse doping depth N trap is the photonic absorption area of device, the region
Doping way be inverse dopant profiles, that is to say, that the deep N-well concentration close to device surface is lower, and close to the deep N-well of substrate P
Concentration is higher, does so mainly for optimised devices field distribution；Two sides N trap and center N in inverse dopant profiles deep N-well
There are horizontal proliferation between trap, cause to form virtual protection ring in PN junction edge.Its device architecture is characterized in that: by P+/in
Heart N trap knot is produced in the deep N-well of inverse dopant profiles, and inside the inverse doping deep N-well at left and right sides of N trap is added.Work as light source
When being irradiated to device surface, photon is absorbed by the uptake zone of device, and the uptake zone (deep N-well) of this device is different from common device
The uptake zone (N trap) of part, the thickness of uptake zone want thick very much, reduce photon and penetrate the probability that deep N-well flows to substrate P, thus
The PN junction that is in deep N-well is improved to the utilization rate of photon, it is possible thereby to improve the photon detection efficiency of device significantly.Together
When be in two sides N trap in deep N-well and the horizontal proliferation intentionally of center N trap, cause to form virtual protection ring at PN junction edge, inhibit
PN junction occurs too early edge breakdown and further increases device photon detection efficiency to improve the quantum efficiency of device.
Detailed description of the invention
Fig. 1 is the CMOS SPAD optoelectronic device structure that the present invention provides that preferred embodiment has the deep N-well of inverse dopant profiles
Figure；
Fig. 2: New-type CMOS SAPD electronics, hole snowslide generation rate figure；
Fig. 3: New-type CMOS SAPD spectral response characteristic figure；
Fig. 4: New-type CMOS SAPD photon detection efficiency performance plot.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, detailed
Carefully describe.Described embodiment is only a part of the embodiments of the present invention.
The technical solution that the present invention solves above-mentioned technical problem is:
It is as shown in Figure 1 the structure chart of New-type CMOS SPAD photoelectric device.As seen from the figure, which is by P+/center N
Trap/inverse doping deep N-well/substrate P composition planar structure.Wherein P+/center N trap constitutes the avalanche region of device (11 in corresponding diagram
Region), photo-generated carrier, which collides to ionize in this area, exponentially to be increased, and is visually observed to form one
Electric current, realize photoelectric conversion.Inverse doping deep N-well constitutes the photonic absorption area (12 region in corresponding diagram) of device, and inverse doping is
Refer to that the deep N-well concentration of close device surface is lower, and as the increase deep N-well concentration of device depth is higher, using this doping
Mode is primarily to optimised devices field distribution；Secondly the thickness for having deepened photonic absorption area using deep N-well, is conducive to device
Photon is fully absorbed, device detection efficient is improved.Simultaneously, there is cross between the two sides N trap in deep N trap and center N trap
To diffusion, causes to form virtual protection ring at PN junction edge, avoid device that too early edge breakdown occurs, advanced optimize device
Detection efficient.
It is illustrated in figure 2 the electrons and holes snowslide generation rate figure of New-type CMOS SPAD, snowslide generation rate is mainly and device
The size of electric field device and the initial position of photo-generated carrier are related.It as seen from the figure, is 0-2 μ m in device longitudinal direction depth
Interior, the snowslide generation rate of electronics is about 70%, and the snowslide generation rate in hole is 0.This is because under the conditions of reversed bias voltage, electricity
Field intensity direction by center N trap be directed toward the region P+, the mobility of electronics is more much higher than hole, under the action of electric field electronics to
The area P+ moves the ionization that collides, and causes avalanche effect.It is in 2-2.2 μ m in device longitudinal direction depth, the snowslide of electronics produces
Raw rate is 0, and the snowslide generation rate in hole is about 50%.This is because hole is under electric field action in this regional scope
The movement of heart N well region, causes avalanche effect.
It is illustrated in figure 4 the spectral response characteristic figure of New-type CMOS SPAD device.Responsiveness is for measuring device photoelectric
One index of transfer capability power, it is mainly related with the optical window open area and quantum efficiency of device.Furthermore lambda1-wavelength
It will also result in certain influence to the size of responsiveness, this is because absorption of the material used in device to different lambda1-wavelengths
The certain difference of effect.Such as silicon materials are preferable in the assimilation effect of 400nm-1100nm range interior focusing, and indium gallium arsenic material
Preferable to the optical wavelength responsiveness within the scope of 900nm-1700nm, device designed by the present invention is using silicon materials.Usually
The measure for improving response device degree is suitably to reduce the optical window open area of device, the light window face of device designed by the present invention
Product is 10 μm of 10 μ m, and spectral response is shown in Fig. 3.It as seen from the figure, is that responsiveness reaches peak value and is about at 650nm in wavelength
0.64A/W, and within the scope of wavelength 800nm-1000nm responsiveness in 0.45A/W or more, it can be seen that device is in near-infrared
Optical band also can be carried out good detection.It is illustrated in figure 4 the photon detection efficiency performance plot of New-type CMOS SPAD device.Light
Sub- detection efficient refers to the probability that an incident photon triggering avalanche and successful probe arrive, mainly with the absorption coefficient of device,
Multiplication region depth is related with thickness.As seen from the figure, when wavelength is 600nm, it is about 68% that photon detection efficiency, which reaches peak value,
Wavelength is within the scope of 600nm-1000nm, and photon detection efficiency drastically declines, this may be due to the device in the wavelength band
The absorption coefficient of part is too poor caused.
In CMOS SPAD photodetector design process of the invention, specifically setting based on the device architecture is proposed
Meter method.Its mentality of designing used is described as follows:
Firstly, the structure starts with to improve in terms of the thickness and optimised devices quantum efficiency two for increasing device uptake zone
The photon detection efficiency of device.Increase the thickness in photonic absorption area in the deep N-well of the inverse dopant profiles of SPAD device inside addition,
So that most of photons are utilized by PN junction, to improve the photon detection efficiency of device.In the deep N-well two sides of inverse dopant profiles
N trap is added, so that forming virtual protection ring at PN junction edge, the too early edge breakdown of suppression device reaches optimised devices quantum effect
The purpose of rate.
Secondly, the technological parameter and structural parameters of device are adjustable.That is the concentration and thickness, center N of the P+ layer of finger device part
The parameters such as the thickness of the concentration of well layer, inverse dopant profiles deep N-well are adjustable.Before this by theoretical model to the main property of device
Energy index is analyzed, and substantially determines that the major parameter of device is as follows: P+ layers of concentration is 5 × 1019/cm-3, with a thickness of 2 μm；
The concentration of center N trap is 5 × 1017/cm-3, with a thickness of 0.4 μm；The concentration of two sides N trap is 3 × 1017/cm-3, with a thickness of 0.5 μ
m；The concentration of substrate P is 1.2 × 1015/cm-3；Deep N-well is with a thickness of 4 μm.It is analyzed again by technique and device simulation, to above
The major parameter referred to carries out simulating, verifying, obtains different quantum efficiency characteristic curves, to obtain photon detection efficiency spy
Linearity curve.It at the same time, can also be by increasing by one layer of anti-reflective film (SiO in device surface2) improve device quantum efficiencies.
The above embodiment is interpreted as being merely to illustrate the present invention rather than limit the scope of the invention.?
After the content for having read record of the invention, technical staff can be made various changes or modifications the present invention, these equivalent changes
Change and modification equally falls into the scope of the claims in the present invention.
Claims (7)
1. a kind of CMOS SPAD photoelectric device of deep N-well with inverse dopant profiles, including substrate P, it is arranged in the substrate P
There are deep N-well, center N trap and P+ layers, the deep N-well both sides are provided with N trap, which is characterized in that the deep N-well is using inverse doping point
Cloth structure, i.e., it is lower close to the deep N-well concentration of device surface, and as longitudinal depth increase deep N-well far from device surface is dense
Degree is higher, and there are horizontal proliferation between the two sides N trap in deep N-well and center N trap, forms n in PN junction edge-It is virtual to protect
Retaining ring is injected device inside when incident photon and is mainly absorbed by deep N-well, and most of photons can be by P+ layers/center N trap knot institute
Using photo-generated carrier is formed, only a few photons penetrate deep N-well and form photo-generated carrier in substrate P.
2. a kind of CMOS SPAD photoelectric device of deep N-well with inverse dopant profiles according to claim 1, feature
Be, described P+ layers with a thickness of 1.5 μm -2.5 μm, for increasing PN junction depth.
3. a kind of CMOS SPAD photoelectric device of deep N-well with inverse dopant profiles according to claim 1, feature
Be, P+ layers of the concentration and thickness, the concentration of center N well layer, inverse dopant profiles deep N-well thickness parameter be 3.5 μm-
4.5 μm, be adjustable.
4. a kind of CMOS SPAD photoelectric device of deep N-well with inverse dopant profiles according to claim 3, feature
Be, P+ layers of the concentration and thickness, the concentration of center N well layer, inverse dopant profiles deep N-well thickness parameter it is adjustable according to
According to being: being analyzed first by main performance index of the theoretical model to device, substantially determine the major parameter of device；Lead to again
Technique and device simulation analysis are crossed, simulating, verifying is carried out to above-mentioned major parameter, obtains different quantum efficiency characteristics
Curve, to obtain photon detection efficiency characteristic curve.
5. a kind of CMOS SPAD photoelectric device of deep N-well with inverse dopant profiles according to claim 3, feature
It is, the concentration range of the inverse dopant profiles deep N-well is 1 × 1016/cm-3-6×1016/cm-3。
6. a kind of CMOS SPAD photoelectric device of the deep N-well with inverse dopant profiles described in one of -5 according to claim 1,
It is characterized in that, the CMOS SPAD photoelectric device surface is additionally provided with one layer of anti-reflective film, for improving device quantum effect
Rate.
7. a kind of CMOS SPAD photoelectric device of deep N-well with inverse dopant profiles according to claim 6, feature
It is, the anti-reflective film uses SiO2。
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| WO2022179223A1 (en) * | 2021-02-26 | 2022-09-01 | 神盾股份有限公司 | Single photon avalanche diode |
| CN117239000A (en) * | 2023-11-10 | 2023-12-15 | 北京中科海芯科技有限公司 | Avalanche photodiode, manufacturing method thereof and single photon detector |
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