CN211238268U - Full-suspension type small-capacitance detector - Google Patents
Full-suspension type small-capacitance detector Download PDFInfo
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- CN211238268U CN211238268U CN202020294096.8U CN202020294096U CN211238268U CN 211238268 U CN211238268 U CN 211238268U CN 202020294096 U CN202020294096 U CN 202020294096U CN 211238268 U CN211238268 U CN 211238268U
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Abstract
The utility model belongs to the technical field of photoelectric detector, a little capacitive detector of full suspension type is disclosed. The detector array is provided with a plurality of detector units distributed in an array; the detector unit is provided with an N-type lightly doped silicon substrate, the upper surface of the silicon substrate is provided with a P-type heavily doped cathode layer, a P-type heavily doped floating electrode layer is arranged at intervals of the P-type heavily doped cathode layer and the cathode layer, and the lower surface of the silicon substrate is provided with an N-type heavily doped anode layer; a silicon dioxide layer is laid on the upper surface of the floating electrode layer; al electrode layers are laid on the surfaces of the cathode layer and the anode layer. The utility model discloses a detector array with energy resolution ratio and position resolution ratio of superelevation and ultrafast time response ability. The floating electrode design is adopted, so that the electrode area is greatly reduced, the capacitance of the detector is reduced, and the noise is reduced. Meanwhile, the dead zone of the detector array is reduced, and the charge collection rate and the detection efficiency are improved.
Description
Technical Field
The utility model belongs to the technical field of photoelectric detector, especially, relate to a little electric capacity detector of full suspension type.
Background
Currently, the closest prior art in the industry is: the detector is mainly used in the technical fields of high-energy physics, celestial body physics, aerospace, military, medicine, pulsar navigation and the like. The traditional silicon detector has large capacitance, high leakage current, large noise and low charge collection rate. Conventional silicon detector arrays are small and cannot meet the increasing detection requirements (higher energy and position resolution and faster time response capability). The countries such as Europe and America always carry out monopoly and blockade of talents, technologies and products in the semiconductor chip manufacturing industry of China; the silicon detector for carrying out particle physics experiments in China basically depends on import and is very expensive.
In summary, the problems of the prior art are as follows:
(1) the traditional silicon detector has large capacitance, high leakage current, large noise and low charge collection rate.
(2) The conventional silicon detector array is small and cannot meet the requirements of higher energy resolution and position resolution and faster time response capability.
The difficulty of solving the technical problems is as follows: reasonable structural design; and (5) manufacturing the detector.
The significance of solving the technical problems is as follows: independently research and develop the small-pixel large-area silicon detector array, master the manufacturing process and production conditions thereof, have own research and development platform, and have very important strategic significance for breaking the monopoly and blockade of foreign technologies and developing the detection technology and national economy in China.
SUMMERY OF THE UTILITY MODEL
To the problem that prior art exists, the utility model provides a little capacitance detector of full suspension type.
The utility model discloses a realize like this, a little capacitance detector of full suspension type is provided with:
a detector array;
the detector array is provided with a plurality of detector units distributed in an array;
the detector unit is provided with an N-type lightly doped silicon substrate, the upper surface of the silicon substrate is provided with a P-type heavily doped cathode layer, a P-type heavily doped floating electrode layer is arranged at intervals of the P-type heavily doped cathode layer and the cathode layer, and the lower surface of the silicon substrate is provided with an N-type heavily doped anode layer.
Further, Al electrode layers are laid on the surfaces of the cathode layer and the anode layer and used for applying voltage.
Further, a silicon dioxide layer is laid on the surface of the floating electrode layer and connected with the Al electrode layer. The floating electrode layer can be protected by the silicon dioxide layer, and the floating electrode layer is prevented from being oxidized when being contacted with external air.
To sum up, the utility model discloses an advantage and positive effect do: the utility model is provided with a plurality of detector units distributed in array; the detector unit is provided with an N-type lightly doped silicon substrate, the upper surface of the silicon substrate is provided with a P-type heavily doped cathode layer, a P-type heavily doped floating electrode layer is arranged at intervals of the P-type heavily doped cathode layer and the cathode layer, and the lower surface of the silicon substrate is provided with an N-type heavily doped anode layer; a silicon dioxide layer is laid on the upper surface of the floating electrode layer; al electrode layers are laid on the surfaces of the cathode layer and the anode layer.
The utility model discloses with a plurality of detector unit arraying, realized having the detector array of super high energy resolution (being superior to 300keV @5.9keV @25 ℃) and position resolution and faster time response ability. The detector unit adopts a floating electrode design, so that the electrode area is greatly reduced, the detector capacitance (less than or equal to 2fF) is reduced, and the noise is reduced. Meanwhile, the dead zone of the detector array is reduced, and the charge collection rate and the detection efficiency (95% 1.5keV) are improved.
Drawings
Fig. 1 is a schematic structural diagram of a fully-suspended small capacitance detector provided by an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a detector unit according to an embodiment of the present invention.
Fig. 3 is a top view of a detector array according to an embodiment of the present invention.
Fig. 4 is a cross-sectional view of a detector array provided by an embodiment of the present invention.
In the figure: 1. a cathode layer; 2. a silicon dioxide layer; 3. a floating electrode layer; 4. a silicon substrate; 5. an anode layer.
Detailed Description
In order to further understand the contents, features and effects of the present invention, the following embodiments are illustrated and described in detail with reference to the accompanying drawings.
To the problem that prior art exists, the utility model provides a little electric capacity detector of full suspension type, it is right below combining the figure the utility model discloses do detailed description.
The utility model provides a detector unit has minimum collection electrode area to adopt the floating electrode design, make the detector exhaust under suitable exhaust voltage. By arraying the detector units, ultra-high energy resolution and position resolution and faster time response capability can be realized.
As shown in fig. 1 to fig. 4, the embodiment of the present invention provides a fully suspended small capacitance detector, which includes: cathode layer 1, silicon dioxide layer 2, floating electrode layer 3, silicon substrate 4 and anode layer 5.
The detector array is provided with a plurality of detector units distributed in an array; the detector unit is provided with an N-type lightly doped silicon substrate 4, a P-type heavily doped cathode layer 1 is obtained at the center of the upper surface of the silicon substrate by utilizing a planar process technology, a P-type heavily doped floating electrode layer 3 is obtained on the rest surfaces which are spaced from the cathode layer at a certain interval, and an N-type heavily doped anode layer 5 is arranged on the lower surface of the silicon substrate.
Preferably, the N-type lightly doped silicon substrate 4 is generally 100-500 μm.
Preferably, the P type heavily doped cathode layer 1 is positioned at the center of the upper surface of the silicon substrate and has the area of 15 × 15 mu m2The doping thickness is generally 1 to 10 μm.
Preferably, the interval between the P type heavily doped floating electrode layer 3 and the cathode layer is generally 5-15 μm, and the doping thickness is generally 1-10 μm.
Preferably, the anode layer 5 is heavily N-doped and has an area of 80 × 80 μm2The doping thickness is generally 1 to 10 μm.
Preferably, Al electrode layers are laid on the surfaces of both the cathode layer 1 and the anode layer 5.
Preferably, a silicon dioxide layer is laid on the upper surface of the floating electrode layer 3, and the silicon dioxide layer 2 is connected to the Al electrode layer.
The technical solution of the present invention is further described below with reference to specific embodiments.
The utility model discloses a detector unit is 80 mu m 300 mu m's cube structure, and the upper and lower surface of detector unit is length of side p ═ 80 mu m's square, and the negative pole is length of side w ═ 15 mu m's square, and floating electrode and negative pole exist a determining deviation. The detector unit structurally comprises an upper surface cathode and a floating electrode, wherein the upper surface cathode and the floating electrode are all P-type heavily doped semiconductor silicon, an Al electrode layer with the thickness of 1 mu m covers the cathode, and a silicon dioxide protective layer with the thickness of 1 mu m covers the floating electrode. The substrate is N-type lightly doped semiconductor silicon. The lower surface anode is N-type heavily doped semiconductor silicon, and an Al electrode layer with the thickness of 1 mu m is covered on the anode.
The utility model discloses a detector array (3X 1) is 240 mu m 80 mu m 300 mu m's cube structure, and detector array's structure includes 3 cathodes on the upper surface, and 3 floating electrodes are P type heavily doped semiconductor silicon, cover the thick Al electrode layer of one deck 1 mu m above the cathode, cover the thick silica protective layer of one deck 1 mu m above the floating electrode. The substrate is N-type lightly doped semiconductor silicon. The lower surface anode is N-type heavily doped semiconductor silicon, and an Al electrode layer with the thickness of 1 mu m is covered on the anode.
The working principle of the utility model (matrix thickness 300 μm, doping thickness 1 μm, interval 5 μm) is: the voltage of 70v is applied to the anode, the voltage of 0v is applied to the cathode, and the whole silicon substrate is completely exhausted under an applied electric field. When incident particles enter the detector, electron hole pairs are generated, the electron hole pairs respectively drift to the anode and the cathode under the action of an electric field, and are finally collected by the electrodes, and signals are amplified and read through an external amplifying circuit.
(1) And (4) potential distribution. The detector array is fully exhausted under the bias voltage of 70v, the potential is gradually reduced from the bottom to the top, the potential surface near the cathode is dense, and the electric field intensity is high.
(2) Electric field distribution. When the detector array is biased, the width of the depletion region is increased continuously until the bias voltage reaches the depletion voltage 70v, the matrix is fully depleted, and no region with the electric field of 0 exists.
(3) Electron concentration distribution. At a bias of 70v, the detector is fully depleted and the charge carriers drift to the collecting electrode.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all the modifications and equivalents of the technical spirit of the present invention to any simple modifications of the above embodiments are within the scope of the technical solution of the present invention.
Claims (7)
1. The utility model provides a little capacitive detector of full suspension type which characterized in that, little capacitive detector of full suspension type is provided with:
a detector array;
the detector array is provided with a plurality of detector units distributed in an array;
the detector unit is provided with an N-type lightly doped silicon substrate, the upper surface of the silicon substrate is provided with a P-type heavily doped cathode layer, a P-type heavily doped floating electrode layer is arranged at intervals of the P-type heavily doped cathode layer and the cathode layer, and the lower surface of the silicon substrate is provided with an N-type heavily doped anode layer.
2. The fully-suspended small capacitance probe as claimed in claim 1, wherein the N-type lightly-doped silicon substrate is 100-500 μm.
3. The fully suspended small capacitance probe of claim 1 in which the heavily P-doped cathode layer is centered on the top surface of the silicon substrate and has an area of 15 × 15 μm2The doping thickness is 1-10 μm.
4. The fully suspended small capacitance probe as claimed in claim 1, wherein the P-type heavily doped floating electrode layer is spaced from the cathode layer by a distance of typically 5-15 μm and the doping thickness is 1-10 μm.
5. The fully suspended small capacitance probe of claim 1 in which the N-type heavily doped anodeElectrode layer with area of 80 × 80 μm2The doping thickness is 1-10 μm.
6. The fully-suspended small capacitance probe according to claim 1, wherein the cathode layer and the anode layer are coated with Al electrode layers.
7. The fully-suspended small capacitance probe according to claim 1, wherein a silicon dioxide layer is laid on the upper surface of the floating electrode layer, and the silicon dioxide layer is connected with the Al electrode layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020294096.8U CN211238268U (en) | 2020-03-11 | 2020-03-11 | Full-suspension type small-capacitance detector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020294096.8U CN211238268U (en) | 2020-03-11 | 2020-03-11 | Full-suspension type small-capacitance detector |
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| CN211238268U true CN211238268U (en) | 2020-08-11 |
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| CN202020294096.8U Active CN211238268U (en) | 2020-03-11 | 2020-03-11 | Full-suspension type small-capacitance detector |
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