CN111223944A - Full-suspension type small-capacitance detector, control method and application - Google Patents

Full-suspension type small-capacitance detector, control method and application Download PDF

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Publication number
CN111223944A
CN111223944A CN202010166051.7A CN202010166051A CN111223944A CN 111223944 A CN111223944 A CN 111223944A CN 202010166051 A CN202010166051 A CN 202010166051A CN 111223944 A CN111223944 A CN 111223944A
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detector
layer
fully
heavily doped
cathode
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李正
张新望
刘曼文
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Xiangtan University
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Xiangtan University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14659—Direct radiation imagers structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

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Abstract

The invention belongs to the technical field of photoelectric detectors, and discloses a full-suspension type small-capacitance detector, a control method and application. The detector array is provided with a plurality of detector units distributed in an array; the detector unit is provided with an N-type lightly doped silicon substrate, the upper surface of the silicon substrate is provided with a P-type heavily doped cathode layer, a P-type heavily doped floating electrode layer is arranged at intervals of the P-type heavily doped cathode layer and the cathode layer, and the lower surface of the silicon substrate is provided with an N-type heavily doped anode layer; a silicon dioxide layer is laid on the upper surface of the floating electrode layer; al electrode layers are laid on the surfaces of the cathode layer and the anode layer. The invention achieves a detector array with ultra-high energy and position resolution and ultra-fast time response capability. The floating electrode design is adopted, so that the electrode area is greatly reduced, the capacitance of the detector is reduced, and the noise is reduced. Meanwhile, the dead zone of the detector array is reduced, and the charge collection rate and the detection efficiency are improved.

Description

Full-suspension type small-capacitance detector, control method and application
Technical Field
The invention belongs to the technical field of photoelectric detectors, and particularly relates to a full-suspension type small-capacitance detector, a control method and application.
Background
Currently, the closest prior art in the industry is: the detector is mainly used in the technical fields of high-energy physics, celestial body physics, aerospace, military, medicine, pulsar navigation and the like. The traditional silicon detector has large capacitance, high leakage current, large noise and low charge collection rate. Conventional silicon detector arrays are small and cannot meet the increasing detection requirements (higher energy and position resolution and faster time response capability). The countries such as Europe and America always carry out monopoly and blockade of talents, technologies and products in the semiconductor chip manufacturing industry of China; the silicon detector for carrying out particle physics experiments in China basically depends on import and is very expensive.
In summary, the problems of the prior art are as follows:
(1) the traditional silicon detector has large capacitance, high leakage current, large noise and low charge collection rate.
(2) The conventional silicon detector array is small and cannot meet the requirements of higher energy resolution and position resolution and faster time response capability.
The difficulty of solving the technical problems is as follows: reasonable structural design; and (5) manufacturing the detector.
The significance of solving the technical problems is as follows: independently research and develop the small-pixel large-area silicon detector array, master the manufacturing process and production conditions thereof, have own research and development platform, and have very important strategic significance for breaking the monopoly and blockade of foreign technologies and developing the detection technology and national economy in China.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a full-suspension type small-capacitance detector, a control method and application.
The invention is realized in this way, a full-suspension small capacitance detector is provided with:
a detector array;
the detector array is provided with a plurality of detector units distributed in an array;
the detector unit is provided with an N-type lightly doped silicon substrate, the upper surface of the silicon substrate is provided with a P-type heavily doped cathode layer, a P-type heavily doped floating electrode layer is arranged at intervals of the P-type heavily doped cathode layer and the cathode layer, and the lower surface of the silicon substrate is provided with an N-type heavily doped anode layer.
Further, Al electrode layers are laid on the surfaces of the cathode layer and the anode layer;
the interval between the floating electrode layer and the cathode layer is 5-15 μm.
Further, a silicon dioxide layer is laid on the upper surface of the floating electrode layer and connected with the Al electrode layer.
Further, the thickness of the cathode layer is 1-10 μm, and the area is 15 × 15 μm2(ii) a The thickness of the anode layer is 1-10 μm, and the area is 80 × 80 μm2The thickness of the floating electrode layer is 1-10 μm, and the thickness of the silicon substrate is 100-500 μm.
Another objective of the present invention is to provide a control method of the fully suspended small capacitance detector (matrix thickness 300 μm, doping thickness 1 μm, and pitch 5 μm), where the control method of the fully suspended small capacitance detector includes: and applying a voltage of 70v to the anode and a voltage of 0v to the cathode, generating electron-hole pairs when incident particles enter the detector, wherein the electron-hole pairs drift to the anode and the cathode respectively under the action of an electric field, are finally collected by the electrodes, and then amplify and read signals through an external amplifying circuit.
Further, the control method of the fully-suspended small-capacitance detector comprises the following steps: and (4) potential distribution, the detector array is fully depleted under the bias voltage of 70v, the potential is gradually reduced from the bottom to the top, the potential surface near the cathode is dense, and the electric field intensity is high.
Further, the control method of the fully-suspended small-capacitance detector comprises electric field distribution, when bias voltage is applied to the detector array, the width of a depletion region is continuously increased until the bias voltage reaches depletion voltage 70v, the matrix is fully depleted, and no region with an electric field of 0 exists.
Further, the control method of the full-suspension type small-capacitance detector comprises electron concentration distribution, when the bias voltage is 70v, the detector is fully exhausted, and the carrier drifts to a collecting electrode.
The invention also aims to provide an application of the fully-suspended small-capacitance detector in aerospace.
The invention also aims to provide an application of the fully-suspended small-capacitance detector in pulsar navigation.
In summary, the advantages and positive effects of the invention are: the invention is provided with a plurality of detector units distributed in an array; the detector unit is provided with an N-type lightly doped silicon substrate, the upper surface of the silicon substrate is provided with a P-type heavily doped cathode layer, a P-type heavily doped floating electrode layer is arranged at intervals between the P-type heavily doped cathode layer and the cathode layer, and the lower surface of the silicon substrate is provided with an N-type heavily doped anode layer; a silicon dioxide layer is laid on the upper surface of the floating electrode layer; al electrode layers are laid on the surfaces of the cathode layer and the anode layer.
The invention arrays multiple detector units to achieve a detector array with ultra high energy resolution (better than 300keV @5.9keV @25 ℃) and position resolution and faster time response capability. The detector unit adopts a floating electrode design, so that the electrode area is greatly reduced, the detector capacitance (less than or equal to 2fF) is reduced, and the noise is reduced. Meanwhile, the dead zone of the detector array is reduced, and the charge collection rate and the detection efficiency (95% 1.5keV) are improved.
Drawings
Fig. 1 is a schematic structural diagram of a fully-suspended small-capacitance detector provided in an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a detector unit provided in an embodiment of the present invention.
FIG. 3 is a top view of a detector array provided by an embodiment of the present invention.
FIG. 4 is a cross-sectional view of a detector array provided by an embodiment of the present invention.
In the figure: 1. a cathode layer; 2. a silicon dioxide layer; 3. a floating electrode layer; 4. a silicon substrate; 5. an anode layer.
Detailed Description
In order to further understand the contents, features and effects of the present invention, the following embodiments are illustrated and described in detail with reference to the accompanying drawings.
In view of the problems in the prior art, the present invention provides a fully-suspended small capacitance detector, which is described in detail below with reference to the accompanying drawings.
The detector unit in the invention has extremely small collecting electrode area, and adopts floating electrode design to ensure that the detector is exhausted under proper exhausting voltage. By arraying the detector units, ultra-high energy resolution and position resolution and faster time response capability can be realized.
As shown in fig. 1 to 4, a fully-suspended small capacitance detector provided by an embodiment of the present invention includes: cathode layer 1, silicon dioxide layer 2, floating electrode layer 3, silicon substrate 4 and anode layer 5.
The detector array is provided with a plurality of detector units distributed in an array; the detector unit is provided with an N-type lightly doped silicon substrate 4, a P-type heavily doped cathode layer 1 is obtained at the center of the upper surface of the silicon substrate by utilizing a planar process technology, a P-type heavily doped floating electrode layer 3 is obtained on the rest surfaces which are spaced from the cathode layer at a certain interval, and an N-type heavily doped anode layer 5 is arranged on the lower surface of the silicon substrate.
Preferably, the N-type lightly doped silicon substrate 4 is generally 100 to 500. mu.m.
Preferably, the P-type heavily doped cathode layer 1 is positioned at the center of the upper surface of the silicon substrate and has an area of 15 multiplied by 15 mu m2The doping thickness is generally 1 to 10 μm.
Preferably, the interval between the P type heavily doped floating electrode layer 3 and the cathode layer is generally 5-15 μm, and the doping thickness is generally 1-10 μm.
Preferably, the anode layer 5 is heavily N-doped to have an area of 80X 80 μm2The doping thickness is generally 1 to 10 μm.
Preferably, Al electrode layers are laid on the surfaces of both the cathode layer 1 and the anode layer 5.
Preferably, a silicon dioxide layer is laid on the upper surface of the floating electrode layer 3, and the silicon dioxide layer 2 is connected to the Al electrode layer.
The technical solution of the present invention is further described below with reference to specific examples.
The detector unit of the invention is in a cubic structure of 80 mu m multiplied by 300 mu m, the upper and lower surfaces of the detector unit are squares with the side length p being 80 mu m, the cathode is a square with the side length w being 15 mu m, and the floating electrode and the cathode have a certain distance. The detector unit structurally comprises an upper surface cathode and a floating electrode, wherein the upper surface cathode and the floating electrode are all P-type heavily doped semiconductor silicon, an Al electrode layer with the thickness of 1 mu m covers the cathode, and a silicon dioxide protective layer with the thickness of 1 mu m covers the floating electrode. The substrate is N-type lightly doped semiconductor silicon. The lower surface anode is N-type heavily doped semiconductor silicon, and an Al electrode layer with the thickness of 1 mu m is covered on the anode.
The detector array (3 multiplied by 1) is a cubic structure of 240 mu m multiplied by 80 mu m multiplied by 300 mu m, the structure of the detector array comprises 3 cathodes on the upper surface, 3 floating electrodes which are all P-type heavily doped semiconductor silicon, an Al electrode layer with the thickness of 1 mu m covers on the cathodes, and a silicon dioxide protective layer with the thickness of 1 mu m covers on the floating electrodes. The substrate is N-type lightly doped semiconductor silicon. The lower surface anode is N-type heavily doped semiconductor silicon, and an Al electrode layer with the thickness of 1 mu m is covered on the anode.
The working principle of the invention (the thickness of the matrix is 300 μm, the doping thickness is 1 μm, and the distance is 5 μm) is as follows: the voltage of 70v is applied to the anode, the voltage of 0v is applied to the cathode, and the whole silicon substrate is completely exhausted under an applied electric field. When incident particles enter the detector, electron hole pairs are generated, the electron hole pairs respectively drift to the anode and the cathode under the action of an electric field, and are finally collected by the electrodes, and signals are amplified and read through an external amplifying circuit.
(1) And (4) potential distribution. The detector array is fully exhausted under the bias voltage of 70v, the potential is gradually reduced from the bottom to the top, the potential surface near the cathode is dense, and the electric field intensity is high.
(2) Electric field distribution. When the detector array is biased, the width of the depletion region is increased continuously until the bias voltage reaches the depletion voltage 70v, the matrix is fully depleted, and no region with the electric field of 0 exists.
(3) Electron concentration distribution. At a bias of 70v, the detector is fully depleted and the charge carriers drift to the collecting electrode.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications, equivalent changes and modifications made to the above embodiment according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.

Claims (10)

1. The utility model provides a little capacitive detector of full suspension type which characterized in that, little capacitive detector of full suspension type is provided with:
a detector array;
the detector array is provided with a plurality of detector units distributed in an array;
the detector unit is provided with an N-type lightly doped silicon substrate, the upper surface of the silicon substrate is provided with a P-type heavily doped cathode layer, a P-type heavily doped floating electrode layer is arranged at intervals of the P-type heavily doped cathode layer and the cathode layer, and the lower surface of the silicon substrate is provided with an N-type heavily doped anode layer.
2. The fully suspended small capacitance probe according to claim 1, wherein the N-type lightly doped silicon substrate is generally 100-500 μm.
3. The fully-suspended small capacitance probe as claimed in claim 1, wherein the heavily P-doped cathode layer is located at the center of the top surface of the silicon substrate and has an area of 15 x 15 μm2The doping thickness is 1-10 μm.
4. The fully suspended small capacitance probe as claimed in claim 1, wherein the P-type heavily doped floating electrode layer is spaced from the cathode layer by a distance of typically 5-15 μm and the doping thickness is typically 1-10 μm.
5. The detector of claim 1, wherein the N-type heavily doped anode layer is 80 x 80 μm in area2The doping thickness is 1-10 μm.
6. The fully-suspended small capacitance probe according to claim 1, wherein the cathode layer and the anode layer are coated with Al electrode layers.
7. The fully-suspended small capacitance probe according to claim 1, wherein a silicon dioxide layer is laid on the upper surface of the floating electrode layer, and the silicon dioxide layer is connected with the Al electrode layer.
8. A control method of a fully-suspended small capacitance detector as claimed in any one of claims 1 to 7, characterized in that the control method of the fully-suspended small capacitance detector comprises: applying a voltage of 70v to the anode and a voltage of 0v to the cathode, generating electron-hole pairs when incident particles enter the detector, wherein the electron-hole pairs drift to the anode and the cathode respectively under the action of an electric field, are finally collected by the electrodes, and then amplify and read signals through an external amplifying circuit;
the control method of the fully-suspended small-capacitance detector further comprises the following steps: potential distribution, the detector array is fully depleted under the bias voltage of 70v, the potential is gradually reduced from the bottom to the top, the potential surface near the cathode is dense, and the electric field intensity is high;
the control method of the fully-suspended small-capacitance detector comprises the following steps of electric field distribution, wherein when bias voltage is applied to a detector array, the width of a depletion region is continuously increased until the bias voltage reaches depletion voltage 70v, a matrix is fully depleted, and an area with an electric field of 0 does not exist;
the control method of the full-suspension type small-capacitance detector comprises the steps of electron concentration distribution, when the bias voltage is 70v, the detector is fully exhausted, and the carrier drifts to a collecting electrode.
9. Use of a fully suspended small capacitance probe according to any one of claims 1 to 7 in aerospace.
10. Use of a fully suspended small capacitance probe according to any one of claims 1 to 7 in pulsar navigation.
CN202010166051.7A 2020-03-11 2020-03-11 Full-suspension type small-capacitance detector, control method and application Pending CN111223944A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113270509A (en) * 2021-04-16 2021-08-17 中国航天科工集团第二研究院 Area array detector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113270509A (en) * 2021-04-16 2021-08-17 中国航天科工集团第二研究院 Area array detector

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