CN111863846B - Fan-shaped alternating silicon pixel detector - Google Patents
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Abstract
The invention discloses a fan-shaped alternating silicon pixel detector, which comprises an N-type silicon substrate, wherein the N-type silicon substrate is of a cylinder structure, the lower surface of the N-type silicon substrate is provided with an N+ incidence surface, and the upper surface of the N-type silicon substrate is provided with a P+ collection surface; the P+ collecting surface consists of p+ type central pixel units and a plurality of fan-shaped areas with equal intervals, wherein the fan-shaped areas are arranged on the radial direction of the p+ type central pixel units, the p+ type central pixel units are positioned at the central position of the P+ collecting surface, each fan-shaped area consists of a plurality of p+ type pixel units A and p+ type pixel units B which are alternately arranged from inside to outside, the p+ type pixel units A and the p+ type pixel units B at the same position of all the fan-shaped areas are alternately arranged at equal intervals to form a p+ type pixel ring, a plurality of concentric p+ type pixel rings are formed in a conformal mode, the number of the p+ type pixel rings is equal to the total number of the p+ type pixel units A and the p+ type pixel units B contained in each fan-shaped area, and the preparation process is simple, the yield is high, and the cost is low.
Description
Technical Field
The invention belongs to the technical field of radiation detection, and relates to a fan-shaped alternating silicon pixel detector.
Background
The semiconductor detector has the following advantages: (1) The high energy resolution, about an order of magnitude higher than the gas detector, is much higher than the scintillation counter. Because ionization in a semiconductor only requires about 3eV of energy to generate a pair of electron-hole pairs, charged particles with the same energy generate more than an order of magnitude higher electron-hole pairs in the semiconductor than ions generated in a gas; (2) The average ionization work of the semiconductor is irrelevant to the energy and the type of the incident particles and the type of the detector in a wide energy response linear range; (3) response times on the order of ns; (4) small volume; (5) The position resolution is higher than 1.4 mu m, so that the method is widely applied to the fields of high-energy physics and the like.
The rapid development and application of new semiconductor detectors has prompted the development of high-energy physics, with the development of silicon microstrip detectors, pixel detectors and CCDs being prominent representatives of the new development of semiconductor detectors. In recent decades, all world high-energy physical laboratories mostly adopt SMDs (Surface Mounted Devices ) as the top point detector, and the development of fields such as astrophysics, cosmic ray physics, nuclear medicine digital imaging technology and the like is promoted. There have also been many new developments in the application of CT and other digitized images in the nuclear medicine field. However, in the early stage, due to technical limitations, only a low-resolution single-side readout silicon microstrip detector can be made. With the improvement of the technical level, a new technical process is adopted, and a double-sided read-out silicon microstrip detector is developed, which has two-dimensional position testing capability. Meanwhile, the pixel detector has been greatly developed, each pixel is connected with its own readout electronics, a large number of electronics paths are needed per unit area, and the pixel detector has very good position resolution and is very useful for experiments with high multiplicity and high case rate. The pixel detector is advanced in that it provides two-dimensional high position resolution using only a single side technology, compared to a double side readout silicon microstrip detector and a silicon drift chamber. The silicon detector is a semiconductor detector, has good energy resolution, and two-dimensional position resolution can be realized by a silicon microstrip detector and a pixel detector which are read out from two sides, but the following defects exist: the double-sided read silicon microstrip detector needs to manufacture read-out strips on two sides of a silicon wafer through an advanced technology process, so that the read-out strips intersect into a certain angle to have the position testing capability; secondly, in order to solve the short circuit problem between the ohmic side micro-strips, complex design and technical process are required, so that the manufacturing cost is high and the yield is low.
Each cell of the pixel detector is connected with its own readout circuit, has good position testing capability, and can be connected with its corresponding electronics by a double-layer metal technique or a flip-chip technique. However, in either technology, a large number of read channels are required, so that the difficulty of the preparation process of the read channels is increased, and the yield is low and the cost is high.
Disclosure of Invention
The embodiment of the invention aims to provide a fan-shaped alternating silicon pixel detector so as to solve the problems of complex preparation process, low yield and high cost of the existing silicon detector with two-dimensional position resolution capability.
The technical scheme adopted by the embodiment of the invention is that the fan-shaped alternating silicon pixel detector comprises an N-type silicon substrate, wherein the N-type silicon substrate is of a cylindrical structure, the lower surface of the N-type silicon substrate is provided with an N+ incidence surface, and the upper surface of the N-type silicon substrate is provided with a P+ collection surface;
The P+ collecting surface consists of a p+ type central pixel unit and a plurality of fan-shaped areas with equal intervals, the fan-shaped areas are arranged on the p+ type central pixel unit in the radial direction, the p+ type central pixel unit is positioned at the central position of the P+ collecting surface, each fan-shaped area consists of a plurality of p+ type pixel units A and p+ type pixel units B which are alternately arranged from inside to outside, the p+ type pixel units A and the p+ type pixel units B at the same position of all the fan-shaped areas are alternately arranged at equal intervals to form a p+ type pixel ring, a plurality of concentric p+ type pixel rings are formed in a conformal mode in all the fan-shaped areas, and the number of the p+ type pixel rings is equal to the total number of the p+ type pixel units A and the p+ type pixel units B contained in each fan-shaped area.
Further, central angles corresponding to the fan-shaped areas are the same.
Further, the p+ type pixel units A and the p+ type pixel units B of each sector area are alternately arranged at equal intervals; the distance between two adjacent p+ type pixel rings is equal to the distance between the adjacent p+ type pixel units A and B.
Further, the p+ type pixel units a and the p+ type pixel units B alternately arranged at equal intervals in each sector area are of a sector structure, and the areas of the p+ type pixel units a and the p+ type pixel units B alternately arranged at equal intervals gradually increase from inside to outside.
Further, a p+ type pixel unit a and a p+ type pixel unit B together form a fan-shaped ring structure, the p+ type pixel unit a and the p+ type pixel unit B occupy half of each fan-shaped ring structure respectively, each fan-shaped area is formed by a plurality of fan-shaped ring structures which are arranged at equal intervals from inside to outside, and the area of each fan-shaped ring structure is gradually increased from inside to outside.
Further, each sector area is correspondingly connected with one theta reading metal connecting line, the theta reading metal connecting line is in a radial shape, and each theta reading metal connecting line is connected with all p+ type pixel units A or all p+ type pixel units B in the sector area corresponding to the theta reading metal connecting line.
Further, each p+ pixel ring is correspondingly connected with one r readout metal connecting wire, the r readout metal connecting wires are circular, and each r readout metal connecting wire is connected with all p+ type pixel units B or all p+ type pixel units A which are not connected with the theta readout metal connecting wires in the corresponding sector area.
Further, the p+ type central pixel unit is connected with a central position readout metal connecting wire.
Further, the theta readout metal connecting lines, the r readout metal connecting lines and the center position readout metal connecting lines are respectively located on different planes, and are separated by an insulating layer.
Furthermore, the N+ incidence surface consists of an N+ type heavily doped layer and a metal aluminum layer positioned on the surface of the N+ type heavily doped layer.
The embodiment of the invention has the beneficial effects that the fan-shaped alternate type silicon pixel detector structure is provided, the two-dimensional position resolution capability of the fan-shaped alternate type silicon pixel detector is realized by using the p+ type pixel units A and the p+ type pixel units B which are alternately arranged, and the theta readout metal connecting wires and the r readout metal connecting wires of the p+ type pixel units A and the p+ type pixel units B which are alternately arranged are realized through single-sided processes such as sputtering, chemical vapor deposition and the like.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a dual-sided read-out silicon microstrip detector.
Fig. 2 is a schematic diagram of a silicon pixel detector.
Fig. 3 is a schematic diagram of a fan-shaped alternating silicon pixel detector according to an embodiment of the invention.
Fig. 4 is a top view of a fan-shaped alternating silicon pixel detector θ readout metal connections according to an embodiment of the present invention.
Fig. 5 is a three-dimensional view of fan-shaped alternating silicon pixel detectors r and θ readout metal connections in accordance with an embodiment of the present invention.
Fig. 6 is a top view of fan-shaped alternating silicon pixel detectors r and θ readout metal connections of an embodiment of the present invention.
Fig. 7 is another schematic structural view of a fan-shaped alternating silicon pixel detector according to an embodiment of the present invention.
In the figure, 1.P+ type readout silicon micro-stripe, 2.N+ type readout silicon micro-stripe, 3.X direction electronic readout channel, 4.y direction electronic readout channel, 5.N type silicon substrate, 6. Sensitive region, 7. Electronic readout channel, 8. Flip chip, 9.p + type pixel cell a,10.P+ type pixel cell B,11.N+ incidence plane, 12.θ readout metal connection line, 13.R readout metal connection line, 14.P+ type central pixel cell, 15. Central position readout metal connection line.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Fig. 1 is a schematic structural diagram of a double-sided readout silicon microstrip detector, which is based on the working principle of a p-n junction, and is manufactured into a heavily doped p+ readout silicon microstrip 1 and an n+ readout silicon microstrip 2 on two sides of an n-type silicon substrate 5 through advanced technology. The silicon microstrip detector with uniformly distributed strip p-n junction type bilateral readout on the surface is manufactured, the depletion layer in the middle part is a sensitive area of the detector, and when negative bias is added to the strip p-n junctions, the depletion layer becomes thicker along with the rising of voltage under the action of an external electric field. When the voltage is high enough, the depletion layer spreads almost to the whole n-type silicon wafer, almost to the full depletion, and the dead layer becomes very thin. When charged particles pass through the sensitive area of the detector, electron-hole pairs are generated, under the action of a high electric field, electrons drift towards the n+ type readout silicon micro-strip 2 close to the track, holes drift towards the p+ type readout silicon micro-strip 1 close to the track, and charge signals generated by drift motion are read out quickly on the p+ type readout silicon micro-strip 1 and the n+ type readout silicon micro-strip 2. The p+ type readout silicon micro-strip 1 is connected with the y-direction electronic readout channel 4, the n+ type readout silicon micro-strip 2 is connected with the x-direction electronic readout channel 3, and the p+ type readout silicon micro-strip 1 and the n+ type readout silicon micro-strip 2 intersect to form a certain angle (90 degrees or any angle), so that the two-dimensional position testing capability is realized.
Fig. 2 is a schematic diagram of a silicon pixel detector whose sensitive area 6 is shown, the pixel detector also being developed on the basis of the principle of p-n junctions, the interior of which is composed of a number of very small p-n junctions, which are well-designed, and which are capable of providing information in two dimensions very quickly. Each pixel cell is connected to its own electronic read-out channel 7. The pixel detector thus fabricated is very useful for high-multiplexing, high-case-rate experiments, but requires a large number of electronic passes per unit area. In fig. 2 is shown a flip chip 8 connecting each detector cell pixel and corresponding electronics readout channel, i.e. the electrical and mechanical connection between each pixel and its electronics readout circuitry is established with a small solder ball or indium, gold, etc.
Fig. 3 is a schematic structural diagram of a fan-shaped alternative silicon pixel detector according to an embodiment of the present invention, as shown in fig. 3, the fan-shaped alternative silicon pixel detector includes an N-type silicon substrate 5, the N-type silicon substrate 5 is in a cylindrical structure, an n+ incident surface 11 is disposed on a lower surface of the N-type silicon substrate 5, a p+ collecting surface is disposed on an upper surface of the N-type silicon substrate 5, the p+ collecting surface is composed of a p+ type central pixel unit 14 and a plurality of equally spaced fan-shaped areas disposed on the p+ type central pixel unit 14 in a radial direction, the p+ type central pixel unit 14 is disposed at a central position of the p+ collecting surface, all the fan-shaped areas are composed of p+ type pixel units A9 and p+ type pixel units B10 alternately disposed from inside to outside, the p+ type pixel units A9 and the p+ type pixel units B10 at the same position of all the fan-shaped areas alternately form a p+ type pixel ring, all the fan-shaped areas form a plurality of concentric p+ type pixel rings, and a spacing between two adjacent p+ type pixel rings is equal to a spacing between the adjacent p+ type pixel units A9 and p+ type pixel unit B10. The p+ -type pixel cell A9 and the p+ -type pixel cell B10 may be provided in a fan-ring structure as shown in fig. 3, and the areas of the p+ -type pixel cell A9 and the p+ -type pixel cell B10 alternately provided at equal intervals are gradually increased from the inside to the outside. The p+ type pixel unit A9 and the p+ type pixel unit B10 may also be configured as shown in fig. 7, that is, one p+ type pixel unit A9 and one p+ type pixel unit B10 together form a fan-shaped ring structure, the p+ type pixel unit A9 and the p+ type pixel unit B10 occupy half of each fan-shaped ring structure, each fan-shaped region is composed of a plurality of fan-shaped ring structures arranged at equal intervals from inside to outside, and the area of each fan-shaped ring structure gradually increases from inside to outside.
The p+ collecting surface may be designed to have 360 equally spaced sector areas outside the p+ type central pixel unit 14, each sector area having a corresponding central angle of 1 °, and since each sector area is composed of alternately spaced p+ type pixel units A9 and p+ type pixel units B10, and the pixel units of adjacent sector areas are alternately arranged, the pixel units in the sector areas are alternately connected and divided into areas for measuring different r and different θ.
The fan-shaped alternating silicon pixel detector is also based on the working principle of a p-N junction, a heavily doped p+ collecting surface is manufactured on the upper bottom surface and the lower bottom surface of an N-type silicon substrate 5 through ion implantation, an N+ type heavily doped layer is manufactured after the whole bottom surface is doped with impurities, a metal aluminum layer is formed on the heavily doped layer through aluminum plating, an N+ incidence surface 11 is formed, the N+ incidence surface 11 is used as an anode of the detector, and the metal aluminum layer is used for welding when biasing. The entire n-type silicon substrate 5 is fully depleted when a negative bias is applied to the sector pixel p-n junction. When charged particles pass through the sensitive area of the detector, namely the N-type silicon substrate 5, electron-hole pairs are generated, electrons drift downwards (namely the N+ incidence surface 11) and holes drift upwards (the P+ collection surface) under the action of a high electric field, and charge signals generated by movement of the holes (actually electrons) are generated on pixel units of the detector, namely the p+ type pixel unit A9 and the p+ type pixel unit B10.
Fig. 4-6 show readout metal connecting lines of a sector-shaped alternating silicon pixel detector, whose readout circuit design is similar to the form of polar coordinates, r being the polar diameter, θ being the polar angle. The θ readout metal connecting lines 12 are in a radial shape, the r readout metal connecting lines 13 are in a circular shape, each sector area corresponds to different angles θ, the smaller θ is, the measurement accuracy is higher, the magnitude of θ is set according to specific conditions, and each angle θ needs one readout channel corresponding to each measurement, so that the number of the θ readout metal connecting lines 12 is equal to that of the sector areas, the θ readout metal connecting lines 12 are in one-to-one correspondence with a plurality of sector areas with equal intervals, and the θ readout metal connecting lines 12 corresponding to each sector area are connected with all p+ type pixel units A9 or all p+ type pixel units B10 in the sector area. The number of the r readout metal connecting lines 13 is equal to that of the p+ type pixel rings, the r readout metal connecting lines 13 are connected with a plurality of concentric p+ type pixel rings in a one-to-one correspondence manner, the r readout metal connecting lines 13 corresponding to each p+ type pixel ring are connected with all p+ type pixel units B10 or p+ type pixel units A9 which are not connected with the theta readout metal connecting lines 12 in the p+ type pixel ring, and the p+ type central pixel units 14 are connected with the central position readout metal connecting lines 15.
The θ readout metal connecting lines 12, r readout metal connecting lines 13 and the center position readout metal connecting line 15 are three layers of different metal connecting lines, are respectively located on different planes, and are separated by an insulating layer. The theta readout metal connecting lines 12, r readout metal connecting lines 13 and the center position readout metal connecting lines 15 can be realized by existing advanced and mature double-layer metal technologies (sputtering, chemical vapor deposition and other processes), are all single-sided planar processes, and are simple to operate.
As shown in fig. 6, the two-dimensional position testing capability of the sector-shaped alternating silicon pixel detector is illustrated by a specific example in the figure, assuming that the angle corresponding to each sector region is 20 °, that is, the upper surface of the circular detection region, i.e., the n-type silicon substrate 5, is divided into 18 sector regions. Along the direction of the r readout metal connecting lines 13 in the figure, the circular detection area consists of concentric rings of different r values, i.e. p+ pixel rings, in this example 7 p+ pixel rings. The two-dimensional position testing capability of a fan-shaped alternating silicon pixel detector can be achieved by measuring different r and θ, i.e., position coordinates (r, θ), when charged particles pass through the sensitive region of the detector. In this particular example, the number of necessary readout channels is 7 channels for r readout, and 18 channels for θ readout, that is, 7 r readout metal connecting lines 13, 18 θ readout metal connecting lines 12, and 1 center readout metal connecting line 15 are necessary, for a total of 26 channels.
In practical application design, θ is 1 ° or even smaller, 1 ° is taken in the following example, taking 1cm 2 as an example of effective detection area of the detector, if the size of single readout microstrip plus isolation oxide layer of the double-side readout silicon microstrip detector is 10 μm, the total number of required electronic readout channels is 1000+1000, and the total number is 2000; the total number of electronic read-out channels required by a pixel detector with a pixel size of 10×10 is 1000×1000, which amounts to 1000000; the number of channels of the fan-shaped alternative silicon pixel detector with the same effective detection area is 360+564+1 (the radius r corresponding to the effective detection area 1cm 2 is 0.564cm, the width of each fan-shaped pixel unit is 10um, the number of channels required for different r measurement is 564, the number of channels is 360, the number of p+ type central pixel unit 14 corresponds to one channel, and the total number is 925). By contrast, the number of readout channels required for a sector-shaped alternating silicon pixel detector is greatly reduced for the same effective detection area, and this advantage is more pronounced as the detector size increases.
The p+ collecting plane and the n+ incident plane 11 are formed by ion implantation, the p+ pixel unit A9 and the p+ pixel unit B10 of the collecting plane are divided into fan-shaped pixel units for r measurement and θ measurement, and the fan-shaped pixel units for r measurement and θ measurement are alternately arranged. The detector is fully depleted by reverse bias and an electric field is formed directed from the N + entrance face 11 to the P + collection face. When particles are incident from the incident surface, electron-hole pairs are generated in the depletion region, electrons drift along the opposite direction of the electric field and are collected by the n+ incident surface 11, and holes are collected by the p+ pixel cells A9 and B10 along the direction of the electric field. Holes are minority carriers detected by the sector-shaped alternating silicon pixel detector and are also carriers generating signals. The area where the ionization effect is generated by the incident particles is larger than the designed pixel size, so that the incident particles generate signals in adjacent pixel units (generally, not many pixel units generate signals at the same time, because in practical application, the design of the pixels is performed according to the measured energy range), and one of the two adjacent pixel units is necessarily connected with the r-measured readout channel and the other one is connected with the θ -measured readout channel, so that the position resolution capability can be realized through the coordinates of (r, θ).
The sector-shaped alternating silicon pixel detector is prepared according to the following method:
S1, performing thermal oxidation to generate compact SiO 2 oxide layers on the upper and lower bottom surfaces of a wafer;
S2, ion implantation, namely implanting P+ ions into the upper surface of the wafer to form a P+ pixel unit, and implanting N+ ions into the bottom surface of the wafer to form an N+ incident surface 11;
S3, annealing, activating implanted ions, and repairing the implanted damage;
step S4, etching, namely opening a contact hole of the theta reading metal connecting wire 12;
step S5, sputtering a metal layer for theta measurement metal connection, and etching gold to form a theta readout metal connecting wire 12;
s6, depositing a first insulating layer;
step S7, etching, namely opening a contact hole for reading out metal connection of the central pixel;
Step S8, sputtering a metal layer for measuring metal connection of the central pixel, and etching to form a central position reading metal connecting line 15;
Step S9, depositing a second insulating layer;
step S10, etching, namely opening a contact hole connected to a reading circuit on each ring of the P+ pixel ring connected with the r measurement metal;
step S11, sputtering a metal layer connected to a readout circuit on each of the P+ pixel rings for r measurement metal connection, and etching to form r readout metal connection lines 13;
step S12, etching an oxide layer of the N+ incidence surface 11, and sputtering to form a metal aluminum layer;
S13, quick annealing;
And S14, passivating.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.
Claims (6)
1. The sector-shaped alternating silicon pixel detector is characterized by comprising an N-type silicon substrate (5), wherein the N-type silicon substrate (5) is of a cylindrical structure, an N+ incidence surface (11) is arranged on the lower surface of the N-type silicon substrate, and a P+ collecting surface is arranged on the upper surface of the N-type silicon substrate;
the P+ collecting surface consists of p+ type central pixel units (14) and a plurality of equally spaced sector areas which are arranged on the p+ type central pixel units (14) at equal intervals in the radial direction, the corresponding central angle of each sector area is 1 DEG, the p+ type central pixel units (14) are positioned at the central position of the P+ collecting surface, each sector area consists of a plurality of p+ type pixel units A (9) and p+ type pixel units B (10) which are alternately arranged from inside to outside, the p+ type pixel units A (9) and the p+ type pixel units B (10) at the same position of all the sector areas are alternately arranged at equal intervals to form a p+ type pixel ring, all the sector areas form a plurality of concentric p+ type pixel rings, and the number of the p+ type pixel rings is equal to the total number of the p+ type pixel units A (9) and the p+ type pixel units B (10) contained in each sector area;
Each sector area is correspondingly connected with one theta reading metal connecting wire (12), the theta reading metal connecting wire (12) is in a radial shape, and each theta reading metal connecting wire (12) is connected with all p+ type pixel units A (9) or all p+ type pixel units B (10) in the sector area corresponding to the theta reading metal connecting wire;
Each P+ pixel ring is correspondingly connected with one r readout metal connecting wire (13), the r readout metal connecting wires (13) are round, and each r readout metal connecting wire (13) is connected with all p+ type pixel units B (10) or all p+ type pixel units A (9) which are not connected with the theta readout metal connecting wire (12) in the corresponding sector area;
The p+ type central pixel unit (14) is connected with a central position readout metal connecting wire (15).
2. A sector-shaped alternating silicon pixel detector according to claim 1, wherein p+ -type pixel cells a (9) and p+ -type pixel cells B (10) of each sector-shaped region are alternately arranged at equal intervals; the distance between two adjacent p+ type pixel rings is equal to the distance between the adjacent p+ type pixel unit A (9) and the adjacent p+ type pixel unit B (10).
3. A fan-shaped alternating silicon pixel detector according to claim 2, wherein the p+ -type pixel cells a (9) and p+ -type pixel cells B (10) alternately arranged at equal intervals in each of the fan-shaped regions are each of a fan-shaped structure, and the areas of the p+ -type pixel cells a (9) and p+ -type pixel cells B (10) alternately arranged at equal intervals gradually increase from the inside to the outside.
4. A sector-shaped alternating silicon pixel detector according to claim 2, wherein a p+ -type pixel cell a (9) and a p+ -type pixel cell B (10) together form a sector-shaped ring structure, the p+ -type pixel cell a (9) and the p+ -type pixel cell B (10) occupy half of each sector-shaped ring structure, respectively, each sector-shaped region is composed of a plurality of sector-shaped ring structures arranged at equal intervals from inside to outside, and the area of each sector-shaped ring structure gradually increases from inside to outside.
5. A fan-shaped alternating silicon pixel detector according to claim 1, wherein the θ readout metal connecting lines (12), the r readout metal connecting lines (13) and the center position readout metal connecting lines (15) are located in different planes, respectively, and are separated by an insulating layer.
6. A fan-shaped alternating silicon pixel detector according to claim 1 or 5, wherein the n+ incidence plane (11) consists of an n+ type heavily doped layer and a metallic aluminium layer on its surface.
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