CN110350044B - Square spiral silicon drift detector and preparation method thereof - Google Patents
Square spiral silicon drift detector and preparation method thereof Download PDFInfo
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- CN110350044B CN110350044B CN201910255417.5A CN201910255417A CN110350044B CN 110350044 B CN110350044 B CN 110350044B CN 201910255417 A CN201910255417 A CN 201910255417A CN 110350044 B CN110350044 B CN 110350044B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 49
- 239000010703 silicon Substances 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 49
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 150000002500 ions Chemical class 0.000 claims abstract description 17
- 238000001035 drying Methods 0.000 claims abstract description 14
- 238000005269 aluminizing Methods 0.000 claims abstract description 10
- 238000013461 design Methods 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- 238000002347 injection Methods 0.000 claims description 17
- 239000007924 injection Substances 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910021645 metal ion Inorganic materials 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 claims description 2
- 238000011068 loading method Methods 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 description 10
- 238000001514 detection method Methods 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000643 oven drying Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a square spiral silicon drift detector and a preparation method thereof, wherein the square spiral silicon drift detector comprises a substrate, the front surface of which is provided with a round n+ collecting anode, a square spiral cathode and a front surface protection ring, the square spiral cathode is distributed around the n+ collecting anode, the width of the square spiral cathode is gradually widened from inside to outside, and the front surface protection ring is distributed around the spiral cathode; the back surface of the substrate is provided with a back electrode, an incident window and a back protection ring, the incident window is closely connected with the back electrode and is positioned in the back protection ring, and the polarity of the back electrode is a cathode. Firstly preparing a mask plate according to the structural design of the square spiral silicon drift detector, sequentially carrying out spin coating, drying, aligning the corresponding mask plate, exposing, developing, checking and post-drying, covering the part without etching by using photoresist, etching, then injecting corresponding ions to prepare N + collecting anode, square spiral cathode, reverse protection ring, incident window, front protection ring and reverse electrode, and finally carrying out aluminizing on the electrode.
Description
Technical Field
The invention belongs to the technical field of radiation-resistant detectors, and relates to a square spiral silicon drift detector and a preparation method thereof.
Background
The detector has a plurality of types, mainly proportional counters, scintillator detectors, gas detectors and semiconductor detectors. The detection principle of the various detectors is different. The invention relates to a radiation detector, which belongs to a semiconductor detector. The radiation detector has wide application, and is mainly applied to basic scientific research, engineering detection and daily life detection. Such as deep space imaging, medical imaging, particle trajectory detection, and radiation source detection. The principle of radiation detection is that the detected material interacts with the detector and is recorded. The interaction process is mainly an ionization process, and electron-hole pairs are formed in the detector, so that the detection purpose is achieved.
The semiconductor detector consists of a positive electrode (anode), a negative electrode (cathode) and semiconductor materials. The silicon drift detector is one of the semiconductor detectors. The silicon drift detector can be designed into various shapes, and is mainly a circular spiral silicon drift detector, the structure of the circular detector is shown in fig. 1, the circular detector consists of an n + anode 1, a p + ring 2 and n-type silicon 3, the detector array is shown in fig. 2, the array gap 4 of the detector array consisting of the circular spiral silicon drift detector is too large and the structure is not compact, so that the resolution of the detector array is not high due to the shape defect of the detector array.
Disclosure of Invention
The invention aims to provide a square spiral silicon drift detector, which solves the problem that the structure of a detector array formed by circular spiral silicon drift detectors is not compact.
The invention further aims to provide a preparation method of the square spiral silicon drift detector.
In order to solve the technical problems, the square spiral silicon drift detector comprises a substrate, wherein the front surface of the substrate is provided with a round n+ collecting anode, a square spiral cathode and a front protection ring with a round rectangle, the square spiral cathode is distributed around the n+ collecting anode, the width of the square spiral cathode is gradually widened from inside to outside, and the front protection ring is distributed around the spiral cathode; the back surface of the substrate is provided with a back electrode, an incident window and a back protection ring which is in the shape of a round rectangle, the incident window is closely connected with the back electrode and is positioned in the back protection ring, and the polarity of the back electrode is a cathode.
Further, the square spiral cathode has a width ranging from 10 to 40 μm.
Further, the number of turns of the front protection ring is 3; the interval between two adjacent circles of the front protection ring is equal to the interval between two outermost circles of spiral rings of the square spiral cathode.
Further, the n+ collecting anode and the spiral cathode are opposite in doping type, but the doping concentration is the same in order of magnitude.
Furthermore, the doping types and the doping concentrations of the reverse electrode and the square spiral electrode are the same in order; the doping type of the substrate is the same as that of the n+ collecting anode.
Further, the substrate is n-type silicon, and the doping concentration is 4×10 11cm-3～2×1012cm-3; the n+ collecting anode is doped boron silicon, and the doping concentration is 10 16cm-3～1020cm-3; the square spiral cathode is doped with phosphorus silicon, and the doping concentration is 10 16cm-3～1020cm-3.
Further, external circuit contact points with the polarity being the cathode are arranged at four corners of the back electrode.
The preparation method of the square spiral silicon drift detector adopts another technical scheme, and comprises the following specific steps:
S1, preparing a mask according to the structural design of a square spiral silicon drift detector, wherein the mask comprises a mark making mask, a P injection mask, an N injection mask, a CUT mask and an aluminum electrode mask;
step S2, marking on a substrate: covering the area without marking, and etching the silicon dioxide of the marked area to And finally, cleaning the photoresist;
Step S3, P injection etching: firstly covering the square spiral cathode, the reverse guard ring, the incident window, the region except the front guard ring and the reverse electrode with photoresist, and then etching the silicon dioxide in the uncovered region to Injecting phosphorus-silicon-doped heavy-doped P+ ions after etching is completed to form a square spiral cathode, a reverse guard ring, an incident window, a front guard ring and a reverse electrode, and finally cleaning photoresist;
Step S4, N injection etching: covering the area except the N + collecting anode with photoresist, etching the silicon dioxide of the area completely, injecting heavy doped N+ ions doped with boron silicon after etching is finished to form an N + collecting anode, and finally cleaning the photoresist;
S5, activating the injected N+ ions and P+ ions;
Step S6, CUT etching: firstly covering the N + collecting anode and the external circuit contact point area with photoresist, etching silicon dioxide on the surface of a substrate to the bottom, and finally cleaning the photoresist;
S7, aluminizing: carrying out wafer loading and vacuumizing, and then carrying out aluminizing on the contact point area of the n + collecting anode and the external circuit by using a magneto-optical sputtering instrument;
step S8, aluminum etching: firstly covering the required aluminum layer with photoresist, displaying the unnecessary aluminum layer, then etching the unnecessary aluminum layer by using etching liquid, and finally cleaning the photoresist.
Further, the step S5 is sequentially subjected to acid washing, metal ion removal, deoxidization layer and annealing in an oxidation furnace to activate the injected N+ ions and P+ ions; the steps S2 to S4, S6 and S8 are that firstly, the area needing etching is covered by photoresist, and then the area needing etching is correspondingly etched; covering the region needing no etching with photoresist, sequentially carrying out photoresist homogenizing, drying, aligning with corresponding mask plates, exposing, developing, checking and post-drying, namely covering the whole surface with photoresist, covering and exposing with corresponding mask plates, developing, checking and post-drying, covering the region needing no etching, and displaying the region needing etching; the step S2 is to align the mark mask plate, the step S3 is to align the P injection mask plate, the step S4 is to align the N injection mask plate, the step S6 is to align the CUT mask plate, and the step S8 is to align the aluminum electrode mask plate.
Further, the photoresist is cleaned by removing the photoresist with stripping solution and then further cleaning with concentrated sulfuric acid.
The square spiral silicon drift detector and the preparation method thereof have the advantages that the square spiral silicon drift detector is small in collection capacitance, the effective area is enlarged under the condition of detectors with the same area, the detector array is more compact, and compared with a circular spiral silicon drift chamber detector, the square spiral silicon drift detector has smaller dead zone and high resolution.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a circular spiral silicon drift detector cell;
FIG. 2 is a schematic diagram of a circular helical silicon drift detector array;
FIG. 3 is a schematic front view of a square spiral silicon drift detector cell;
FIG. 4 is a schematic diagram of a reverse side of a square spiral silicon drift detector cell;
FIG. 5 is a cross-sectional view of a square spiral silicon drift detector cell;
FIG. 6 is a schematic diagram of a square spiral silicon drift detector array;
FIG. 7 is an enlarged schematic view of a front electrode of a square spiral silicon drift detector cell;
FIG. 8 is an enlarged schematic view of the upper right hand corner of the front face of a square spiral silicon drift detector unit;
FIG. 9 is an enlarged schematic view of the top left corner of the back side of a square spiral silicon drift detector cell.
In the figure, 1.N + anode, 2.P + ring, 3.N silicon, 4 array gap, 5.N + collector anode, 6 square spiral cathode, 7 back guard ring, 8 entrance window, 9 substrate, 10 front guard ring, 11 external circuit contact.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The square spiral silicon drift detector comprises a substrate 9, wherein the front surface of the substrate 9 is provided with a middle n+ collecting anode 5, square spiral cathodes 6 and a front surface protecting ring 10, the square spiral cathodes 6 are distributed around the middle n+ collecting anode 5, the width of each square spiral cathode 6 is gradually widened from inside to outside, the width range is 10-40 mu m, and the front surface protecting ring 10 is positioned outside the outermost ring of each square spiral cathode 6; the number of turns of the front protection ring 10 is 3, and the interval between two adjacent turns is equal to the interval between the two outermost turns of the square spiral cathode 6; the n+ collecting anode 5 is of opposite doping type to the square spiral cathode 6, but of the same order of doping concentration. The back surface of the substrate 9 is provided with a back surface protection ring 7, a back surface incident window 8 and a back surface electrode, the back surface protection ring 7 and the front surface protection ring 10 are in round corner rectangular shapes, the distance between the two rings is ensured to be equal, and dead zones are reduced. The incident window 8 and the back electrode are closely connected and are both positioned in the back protection ring 7, the incident window 8 is made of a silicon substrate and is used for receiving signals to be measured, the doping types and the doping concentration orders of the back electrode and the square spiral electrode 6 are the same, the doping types of the substrate 9 and the n+ collection anode 5 are the same, and the doping concentration of the substrate 9 is far lower than that of the n+ collection anode 5. The back electrode is a cathode, the substrate 9 is a silicon material, the n+ collecting anode 5 is doped silicon, the doping element is boron, and the doping concentration is 10 16cm-3～1020cm-3; the square spiral cathode 6 is doped silicon, the doping element is phosphorus, and the doping concentration is 10 16cm-3～1020cm-3.
The width of the square spiral cathode 6 is gradually widened, so that a shorter charge collecting channel is formed, rapid charge collection is facilitated, the width range is 10-40 mu m, the optimum width range obtained by optimizing the drift channel is achieved, and the detector efficiency is reduced due to the fact that the width of the square spiral cathode 6 is too large or too small. The front protection ring 10 is located outside the outermost ring of the square spiral cathode 6, so as to prevent breakdown and reduce leakage current, and the number of turns of the front protection ring is less than 3, which is easy to cause breakdown, and the leakage current is too large to influence the performance of the detector when the number of turns of the front protection ring is greater than 3. The interval between two adjacent circles is equal to the interval between two outermost circles of spiral rings of the square spiral cathode 6, and the incident window 8 and the reverse electrode are arranged in the reverse protection ring 7, so as to prevent excessive current and break down PN junction.
External circuit contact points 11 with the polarity of the cathode are arranged at four corners of the back electrode and are used for connecting an external circuit.
The invention has a small intermediate n+ collecting anode 5, thereby reducing the collecting capacitance, reducing the electronic noise and achieving higher resolution. The n+ collecting anode 5 is surrounded by a square spiral cathode 6, and the voltage applied to the square spiral cathode 6 generates an electric field that drifts electrons to the n+ collecting anode 5. The voltage applied to the counter electrode 11 is used to deplete the substrate 9, pulling the carriers towards the n+ collection anode 5. The doping type of the substrate 9 (sensitive area of the detector) is the same as that of the n+ collecting anode 5, but the doping concentration of the substrate 9 is far lower than that of the n+ collecting anode 5, the doping concentration of the substrate 9 is 4×10 11cm-3～2×1012cm-3, the doping concentrations of the n+ collecting anode 5 and the square spiral cathode 6 are 10 16cm-3～1020cm-3, the doping concentration of the substrate 9 is too small to play a role of an electrode, and the characteristics of a semiconductor are lost if the doping concentration of the substrate 9 is too large. In order to form the electrode, the semiconductor material is equivalent to metal under the condition of high doping concentration, the doping concentration is in the range of 10 16cm-3～1020cm-3 according to the situation, the doping concentration of the n+ collecting anode 5 and the square spiral cathode 6 is too low to form the electrode, the doping concentration is too high, and the doping atoms are too close to each other, so that the impurity energy levels of the n+ collecting anode and the square spiral cathode are combined into an energy band, and the semiconductor material does not have the characteristic of a semiconductor any more.
The manufacturing process of the square spiral silicon drift detector can be summarized into oxidation, etching, ion implantation and aluminizing. The oxidation adopts gettering oxidation, so that the purity of silicon is higher.
The preparation method of the square spiral silicon drift detector comprises the following specific steps:
S1, preparing a mask according to the structural design of a square spiral silicon drift detector, wherein the mask comprises a mark making mask, a P injection mask, an N injection mask, a CUT mask and an aluminum electrode mask;
Step S2, marking the substrate 9, wherein the subsequent process steps are all performed in a layer-by-layer superposition mode, and are connected step by step, and the subsequent alignment is facilitated by using the marks; marking sequentially by spin coating, baking, aligning with a mark mask plate, exposing, developing, checking and post baking, and etching silicon dioxide in the marked area to obtain a film And finally, cleaning the photoresist;
Step S3, P injection etching: sequentially homogenizing, oven drying, aligning with P, injecting into mask plate, exposing, developing, inspecting, and post-baking, covering the square spiral cathode 6, the back surface protecting ring 7, the incident window 8, the front surface protecting ring 10, and the area except the back surface electrode with photoresist, and etching the silicon dioxide of the areas of the square spiral cathode 6, the back surface protecting ring 7, the incident window 8, the front surface protecting ring 10, and the back surface electrode to After etching, heavily doped P+ ions are injected to form a square spiral cathode 6, a reverse guard ring 7, an incident window 8, a front guard ring 10 and a reverse electrode, and finally photoresist cleaning is carried out;
Step S4, N injection etching: sequentially carrying out spin coating, drying, N injection mask plate alignment, exposure, development, inspection and post-drying, etching the N + collecting anode 5 area, and injecting heavily doped N+ ions after etching to form an N + collecting anode 5;
S5, activating the injected N+ ions and P+ ions through annealing, and mainly carrying out annealing in an oxidation furnace through acid washing, metal ion removal and deoxidization;
step S6, CUT etching: preparing for subsequent aluminizing, namely, because the aluminum is directly contacted with silicon, uniformly coating, drying, aligning a CUT mask plate, exposing, developing, checking and post-drying, covering the area of the N + collecting anode 5 and the external circuit contact point 11 with photoresist, etching silicon dioxide on the surface of the substrate 9 to the bottom, and finally cleaning the photoresist;
S7, aluminizing: aluminizing the region of the n + collecting anode 5 and the external circuit contact point 11 by using a magneto-optical sputtering instrument, performing upper sheet, vacuumizing and aluminizing;
and S8, aluminum etching, namely coating the required aluminum layer with photoresist, displaying the unnecessary aluminum layer, etching the unnecessary aluminum layer with etching liquid, and finally cleaning the photoresist through photoresist homogenizing, drying, aligning an aluminum electrode mask plate, exposing, developing, checking and post-drying.
The photoresist is cleaned by firstly removing the photoresist by stripping the photoresist solution and then further cleaning by concentrated sulfuric acid.
Working principle: and (3) applying electric fields on the front and back sides (incidence sides) of the detector to form an electron drift channel. When radiation or particles enter from the entrance face, the radiation or particles react with the semiconductor material to form electron-hole pairs, and the electron-hole pairs are collected by the electrode through the drift channel. A current, i.e. a signal, is formed which can be measured by an external circuit, thereby achieving the purpose of measurement.
The detector of the invention is a square spiral structure and is provided on the basis of a circular spiral structure. The circular helical structure detector units have dead zones when forming the detector array, which makes the detector array not compact. The square spiral structure detector can solve the problem and improve the compactness of the array. The spiral width of the detector is gradually widened, so that an electron drift channel is shorter, charge collection is facilitated, and the collection efficiency of the detector is improved.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.
Claims (7)
1. The square spiral silicon drift detector is characterized by comprising a substrate (9), wherein a round n+ collecting anode (5), square spiral cathodes (6) and a round rectangular front protection ring (10) are arranged on the front surface of the substrate (9), the square spiral cathodes (6) are distributed around the n+ collecting anode (5), the width of the square spiral cathodes (6) is gradually widened from inside to outside, and the front protection ring (10) is distributed around the spiral cathodes (6); the back surface of the substrate (9) is provided with a back electrode, an incident window (8) and a back protection ring (7) with a round rectangle shape, the incident window (8) and the back electrode are closely connected and are both positioned in the back protection ring (7), and the polarity of the back electrode is a cathode;
the width range of the square spiral cathode (6) is 10-40 mu m;
the number of turns of the front protection ring (10) is 3;
The interval between two adjacent circles of the front protection ring (10) is equal to the interval between two outermost circles of spiral rings of the square spiral cathode (6);
The substrate (9) is n-type silicon, and the doping concentration is 4 multiplied by 10 11cm-3~2×1012cm-3;
the n+ collecting anode (5) is doped with boron silicon, and the doping concentration is 10 16cm-3~1020cm-3;
The square spiral cathode (6) is doped with phosphorus silicon, and the doping concentration is 10 16cm-3~1020cm-3.
2. Square spiral silicon drift detector according to claim 1, characterized in that the n+ collecting anode (5) is doped with the spiral cathode (6) of opposite type but of the same order of magnitude.
3. Square spiral silicon drift detector according to claim 1, characterized in that the counter electrode and square spiral electrode (6) are of the same order of doping type and doping concentration;
the doping type of the substrate (9) is the same as that of the n+ collecting anode (5).
4. A square spiral silicon drift detector according to any one of claims 1-3, characterized in that external circuit contact points (11) with a cathode polarity are arranged at four corners of the back electrode.
5. A method for manufacturing a square spiral silicon drift detector according to any one of claims 1 to 3, characterized by comprising the following specific steps:
s1, preparing a mask plate according to the structural design of a square spiral silicon drift detector, wherein the mask plate comprises a mark making mask plate, a P injection mask plate, an N injection mask plate, a CUT mask plate and an aluminum electrode mask plate;
Step S2, marking on a substrate (9): covering the area without marking, etching silicon dioxide of the marked area to 1000A, and finally cleaning photoresist;
step S3, P injection etching: covering the square spiral cathode (6), the reverse guard ring (7), the incident window (8), the front guard ring (10) and the region except the reverse electrode with photoresist, etching silicon dioxide in the uncovered region to 1000A, injecting phosphorus-silicon-doped heavily doped P+ ions after etching is completed to form the square spiral cathode (6), the reverse guard ring (7), the incident window (8), the front guard ring (10) and the reverse electrode, and finally cleaning the photoresist;
Step S4, N injection etching: covering the area except the N + collecting anode (5) with photoresist, etching the silicon dioxide of the area completely, injecting heavy doped N+ ions doped with boron silicon after etching is finished to form an N + collecting anode (5), and finally cleaning the photoresist;
S5, activating the injected N+ ions and P+ ions;
Step S6, CUT etching: firstly covering the N + collecting anode (5) and the external circuit contact point (11) area with photoresist, etching silicon dioxide on the surface of a substrate (9) to the bottom, and finally cleaning the photoresist;
S7, aluminizing: carrying out loading and vacuumizing, and then carrying out aluminizing on the region of the n + collecting anode (5) and the external circuit contact point (11) by using a magneto-optical sputtering instrument;
step S8, aluminum etching: firstly covering the required aluminum layer with photoresist, displaying the unnecessary aluminum layer, then etching the unnecessary aluminum layer by using etching liquid, and finally cleaning the photoresist.
6. The method for manufacturing a square spiral silicon drift detector according to claim 5, wherein the step S5 activates the injected n+ ions and p+ ions by sequentially performing acid washing, metal ion removal, deoxidization layer, and annealing in an oxidation furnace;
The steps S2-S4, S6 and S8 are that firstly, the area needing etching is covered by photoresist, and then the area needing etching is correspondingly etched;
Covering the region needing no etching with photoresist, sequentially carrying out photoresist homogenizing, drying, aligning with corresponding mask plates, exposing, developing, checking and post-drying, namely covering the whole surface with photoresist, covering and exposing with corresponding mask plates, developing, checking and post-drying, covering the region needing no etching, and displaying the region needing etching;
The step S2 is to align the mark mask plate, the step S3 is to align the P injection mask plate, the step S4 is to align the N injection mask plate, the step S6 is to align the CUT mask plate, and the step S8 is to align the aluminum electrode mask plate.
7. The method of claim 5, wherein the photoresist is removed by stripping and further cleaned with concentrated sulfuric acid.
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