CN108920809A - The two-sided silicon drifting detector (SDD) of large area helical form hexagon and its design method - Google Patents
The two-sided silicon drifting detector (SDD) of large area helical form hexagon and its design method Download PDFInfo
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Abstract
The invention belongs to field of deep space exploration, discloses a kind of two-sided silicon drifting detector (SDD) of large area helical form hexagon and its design method, the two-sided silicon drifting detector (SDD) design method of large area helical form hexagon include the following steps：Determine the potential of silicon drifting detector (SDD) front and rear surfaces；From point S1 to the best drift path of point S2 when proposed adoption mathematics variational calculation carrier drifts about in silicon drifting detector (SDD)；Determine the constant drift field of best drift path；Calculate the width distribution of the spiral-shaped cathode of silicon drifting detector (SDD).The present invention passes through the analysis to SDD carrier drift Behavior law and heavy doping electrode growth, start with from the corpuscular property theoretical calculation method of new construction, novel process Integrated design and light, design have it is two-sided it is relevant not only kept uniform electronic drift field but also the double-face electrode of smooth drift orbit be provided, establish intensity 0.5~15keV grenz ray particle high energy resolution, efficiently collection SDD innovative design production method.
Description
Technical field
The invention belongs to field of deep space exploration more particularly to a kind of two-sided silicon drift of large area helical form hexagon to visit
Survey device and its design method.
Background technique
Currently, the prior art commonly used in the trade is such：
X-ray pulsar be massive star evolution, collapse, supernova outburst traces, have extremely stable rotation
Period (stability be better than 10-19s/s) is known as nature most accurately astronomical clock, can be terrestrial space, deep space exploration
There is provided high-precisions navigation information, the navigation based on pulsar such as position, speed, time and posture with space flight spacecraft is forever
The novel navigation system that can not be destroyed.Compared with GPS, Beidou navigation mode, New System pulsar navigation technology is near the ground
And Deep-space TT&C network application aspect has incomparable advantage.But very low (the 10-5ph/ of pulsar X-ray radiation flow
S/cm2), detection difficulty is big, therefore X-ray detector is the core component for forming pulsar navigation system.X-ray is visited in the world
The research for surveying device, towards silicon drift chamber detector (the Silicon Drift with low-power consumption, high energy resolution
Detector, SDD) technique direction development, with meet X-ray pulsar independent navigation time dissemination system high-performance, large-area coverage,
The important technical demand of high availability.Current international SDD area is small and expensive, and the country there is no mature technology.
In conclusion problem of the existing technology is：The typical area of silicon drifting detector (SDD) is 50mm in the world2It is left
The right side, price are 100,000 yuan or so.Because the problem in science and physical problem complexity of detector design are cumbersome, top in the world at present
SDD manufacturer, such as KETEC and AMTEK company, that does not capture large area cell S DD still designs and prepares technology, mesh
The SDD research of the preceding country also still rests on stage of junior unit area, the university institute and enterprise ground height according to
Rely import.Once the design and fabrication technical bottleneck of large area SDD unit is broken through, the development for Chinese detector, Yi Jiying
It can be played an important role with each field of detector.
Solve the difficulty and meaning of above-mentioned technical problem：
Due to external technology blockage, and the missing of domestic basic research, the current country there is no large area SDD and its array
Design and produce equal research and development technologies.Problem is established for pulsar X-ray detection and navigation system large database concept, is badly in need of accelerating to open
The high energy resolution SDD tackling problems in key technologies that exhibition China is applied to X-ray pulsar independent navigation time dissemination system is tested with test
Card carries out ultrapure High Resistivity Si material silicon drifting detector (SDD) (Silicon Drift Detector, SDD) carrier drift behavior rule
Rule, heavy doping electrode growth rule, large-scale SDD array physical structure bearing mechanism seize science and technology development strategy commanding elevation, realize detection
The great-leap-forward development of device technology, the technical bottleneck for breaking through domestic pulsar autonomous positioning navigation time dissemination system have extremely heavy
The meaning wanted.
The present invention is by the analysis to SDD carrier drift Behavior law and heavy doping electrode growth, from new construction, novel
The corpuscular property theoretical calculation method of technique Integrated design and light is started with, and design, which has, two-sided relevant both kept uniform electronic to drift about
Electric field provides the double-face electrode of smooth drift orbit again, establishes intensity in the high energy resolution of 0.5~15keV grenz ray particle
Rate, the innovative design production method for efficiently collecting SDD.The detector overcomes the disadvantage that detector area is small in the world, in unit
Big (the 314mm of area2To 2827mm2) on the basis of, energy resolution is further increased, energy consumption is reduced, reduces noise etc..For
For the detector array of square meter grade needed for pulsar detection, large area detector unit reduces array and forms required spy
Device number is surveyed, the difficulty such as physical mechanical stress when array splicing is reduced, further saves cost, is space flight and aviation and deep space
The development of detection provides foreword technical support.
Summary of the invention
In view of the problems of the existing technology, the present invention provides a kind of two-sided silicon drifts of large area helical form hexagon to visit
Device and its design method are surveyed, captures that SDD cellar area in the world is small, splicing array problem at high cost, while realizing grenz ray
High energy resolution 2.0%@5.9keV surmount.
The invention is realized in this way a kind of design method of the two-sided silicon drifting detector (SDD) of large area helical form hexagon,
Include the following steps：
(1) potential of silicon drifting detector (SDD) front and rear surfaces is determined：
The inside drift field of cylindrical silicon drifting detector is related with two surface potential distributions up and down of detector, circle
The negative potential of any point (r, x, θ) inside cylindricality silicon drifting detector (SDD) should meet the following conditions：
Wherein, x is the coordinate of detector thickness direction, and r is the coordinate along cylinder radius direction, and θ is angular coordinate, this
Sample Poisson's equation can simplify as following form：
Wherein NeffIt is the Effective Doping concentration of SDD, the solution of equation (2) is：
Wherein, Vfd=qNDd2/2ε0ε is total depletion voltage, and d is the thickness of SDD, and Φ (r) and Ψ (r) are front and back table respectively
The potential (x=0 and x=d) in face：
Φ (r)=φ (r, x=0) and Ψ (r)=φ (r, x=d).
(2) from point S when proposed adoption mathematics variational calculation carrier drifts about in silicon drifting detector (SDD)1To point S2It is best
Drift path (as shown in Figure 2)：
It is assumed that the voltage's distribiuting of reverse side to positive voltage's distribiuting be it is directly proportional, have：
Ψ (r)=VB+ γ Φ (r) (0≤γ < 1) (5)
And then optimal drift path can be obtained；
(3) the constant drift field of best drift path is determined：Meeting along the electric field in best drift path is one normal
Number, i.e. Edr,r(r,xch(r))=Edr,r, and the distribution of the surface potential of obtained constant drift field must be determined by following equation：
Its corresponding surface electric field distribution is：
VfdFor total depletion voltage, analyze it is found that constant drift field is determined by added voltage completely：
(4) width distribution of the spiral-shaped cathode of silicon drifting detector (SDD) is calculated：For the special case of a spiral spacing, i.e.,
Spacing p (r) withIt is directly proportional：
Wherein p1It is the spacing of first lap, r1It is the radius of first lap, they can be determined in design, in such case
Under, the spiral-shaped cathode of silicon drifting detector (SDD) can be determined by following equation：
WhereinThe rotation angle increased continuously when being spiral rotating；The width of the spiral-shaped cathode of silicon drifting detector (SDD)
It is distributed as：
Wherein, ρsIt is the square resistance of spiral-shaped cathode ion implanted layer, I is the total current of spiral-shaped cathode, and α is
It is determined by the geometry of spiral cathode, but in practical applications in order to form overall compact silicon drifting detector (SDD) array,
It is spiral-shaped to hank subcircular, such as regular hexagon (α=6), or square
Another object of the present invention is to provide a kind of two-sided silicon drifting detector (SDD)s of large area helical form hexagon.Wherein, 1
It is front anode electrode, is the N-type semiconductor silicon of heavy doping；2 be front cathode electrode, is the P-type semiconductor silicon of heavy doping,
Shape is the helical form of hexagon；3 be front protection ring；4 be silicon body, for the N-type semiconductor silicon being lightly doped；5 be the yin of reverse side
Pole electrode, is the P-type semiconductor silicon of heavy doping, and shape is the helical form of hexagon；6 be the protection ring of reverse side, between each ring
For silicon dioxide layer.Anode and cathode electrode are made in the one side of silicon body, it is referred to as positive.Cathode is made in the another side of silicon body
Electrode, the one side of anode electrode is not known as reverse side.Front cathode electrode and reverse side cathode electrode are the helical form of hexagon.
Protection ring is located at the outside of detector cathode most outer ring, plays the role of surrounding protection.
In conclusion advantages of the present invention and good effect are：
The present invention is by the analysis to SDD carrier drift Behavior law and heavy doping electrode growth, from new construction, novel
The corpuscular property theoretical calculation method of technique Integrated design and light is started with, and design, which has, two-sided relevant both kept uniform electronic to drift about
Electric field provides the double-face electrode of smooth drift orbit again, establishes intensity in the high energy resolution of 0.5~15keV grenz ray particle
Rate, the innovative design production method for efficiently collecting SDD.The detector overcomes the disadvantage that detector area is small in the world, in unit
Big (the 314mm of area2To 2827mm2) on the basis of, energy resolution is further increased, energy consumption is reduced, reduces noise etc..For
For the detector array of square meter grade needed for pulsar detection, large area detector unit reduces array and forms required spy
Device number is surveyed, the difficulty such as physical mechanical stress when array splicing is reduced, further saves cost, is space flight and aviation and deep space
The development of detection provides foreword technical support.
Following table is the comparison of index and advanced SDD technical indicator in the world of the invention, and comparison is German KETEK public
The SDD last word index of department, as shown in table 1.
Table 1：The index of the present invention and international advanced SDD technology compares
Detailed description of the invention
Fig. 1 is that the two-sided silicon drifting detector (SDD) three-dimensional structure of the spiral helicine hexagon of large area provided in an embodiment of the present invention is shown
It is intended to.It is indicated in such as figure, 1 is front anode electrode, is the N-type semiconductor silicon of heavy doping；2 be front cathode electrode, is heavily doped
Miscellaneous P-type semiconductor silicon, shape are the helical form of hexagon；3 be front protection ring；4 be silicon body, for the N-type half being lightly doped
Conductor silicon；5 be the cathode electrode of reverse side, is the P-type semiconductor silicon of heavy doping, and shape is the helical form of hexagon；6 be reverse side
Protection ring.
Fig. 2 is three-dimensional back side top view, is the X-ray plane of incidence.
Fig. 3 is three-dimensional front plan view, is face where passive electrode.
Fig. 4 is the two-sided silicon drifting detector (SDD) structural schematic diagram of the spiral helicine hexagon of large area provided in an embodiment of the present invention
Sectional view.As shown in figure 4, front cathode the first ring making alive VE1, front cathode most outer ring making alive Vout, reverse side cathode
One ring making alive VB, reverse side cathode most outer ring making alive VB out, front is as collection surface, and reverse side is as the ray plane of incidence.Anode is made
For signal collection and end is read, external amplifier does signal enhanced processing, and drift cathode loop front and back forms silicon body
Drift channel and drift field in (there is the non-depleted region domain of very little part at substantially depletion region, edge), X-ray is from the negative
Window is injected, and electron hole pair is formed, and electronics is collected to anode is drifted to, and the charge being collected into is done again to be amplified, output signal.
Because annode area is very small (area relative to detector), capacitor is very small, is usually less than equal to 100fF.Detector is thick
Degree is 300 to 500 microns.
Fig. 5 is the possibility that carrier provided in an embodiment of the present invention drifts about in SDD and Optimal route analysis curve graph.Its
The step of calculating and deriving is as shown in the derivation of equation part of this paper.When linear drift channel can provide the smallest drift
Between, improve resolution ratio etc..
Fig. 6 is the top view for having made detector front center region.
Fig. 7 is positive top view, and left figure includes anode, and cathode loop, protection ring etc., right figure is that corresponding center is locally put
Big figure.
Fig. 8 is the potential profile and distribution map of the electric field front and back and drift channel of detector.It can from figure
To find out, the pressurization of front and back sides is in gradient, drift channel to be formed in detector, and drift channel is smooth, and intimate one
Straight line.Left figure is detector Potential Distributing curve graph, and a thicker curve is the positive Potential Distributing curve of detector in figure,
A thinner curve is the Potential Distributing curve of detector reverse side；Right figure is field distribution curve graph, a uppermost song
Line is the positive field distribution curve of detector, and a bottom field distribution curve for detector reverse side is located at two songs
It is the field distribution on drift channel among line, it is seen that it is close to a parallel lines, illustrates the electric field on drift channel
Size is approximately a constant.
Fig. 9 is electronics drift time and radius relationship figure.This figure illustrates that incoming position difference influences whether that particle is detecting
Drift time inside device.We often make particle regardless of that can make its use from the where incident of detector by design
The minimal drift time reaches collector.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to embodiments, to the present invention
It is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to
Limit the present invention.
As shown in Figure 1, being a kind of two-sided silicon drift detection of the spiral helicine hexagon of large area provided in an embodiment of the present invention
Device.Wherein, 1 is front anode electrode, is the N-type semiconductor silicon of heavy doping；2 be front cathode electrode, is the p-type half of heavy doping
Conductor silicon, shape are the helical form of hexagon；3 be front protection ring；4 be silicon body, for the N-type semiconductor silicon being lightly doped；5 are
The cathode electrode of reverse side, is the P-type semiconductor silicon of heavy doping, and shape is the helical form of hexagon；6 be the protection ring of reverse side,
It is silicon dioxide layer between each ring.
The design method of the two-sided silicon drifting detector (SDD) of large area helical form hexagon, includes the following steps：
(1) potential of silicon drifting detector (SDD) front and rear surfaces is determined：
The inside drift field of cylindrical silicon drifting detector is related with two surface potential distributions up and down of detector, circle
The negative potential of any point (r, x, θ) inside cylindricality silicon drifting detector (SDD) should meet the following conditions：
Wherein, x is the coordinate of detector thickness direction, and r is the coordinate along cylinder radius direction, and θ is angular coordinate, this
Sample Poisson's equation can simplify as following form：
Wherein NeffIt is the Effective Doping concentration of SDD, the solution of equation (2) is：
Wherein, Vfd=qNDd2/2ε0ε is total depletion voltage, and d is the thickness of SDD, and Φ (r) and Ψ (r) are front and back table respectively
The potential (x=0 and x=d) in face：
Φ (r)=φ (r, x=0) and Ψ (r)=φ (r, x=d).
(2) from point S when proposed adoption mathematics variational calculation carrier drifts about in silicon drifting detector (SDD)1To point S2It is best
Drift path：
It is assumed that the voltage's distribiuting of reverse side to positive voltage's distribiuting be it is directly proportional, have：
Ψ (r)=VB+ γ Φ (r) (0≤γ < 1) (5)
And then optimal drift path can be obtained；
(3) the constant drift field of best drift path is determined：Meeting along the electric field in best drift path is one normal
Number, i.e. Edr,r(r,xch(r))=Edr,r, and the distribution of the surface potential of obtained constant drift field must be determined by following equation：
Its corresponding surface electric field distribution is：
VfdFor total depletion voltage, analyze it is found that constant drift field is determined by added voltage completely：
(4) width distribution of the spiral-shaped cathode of silicon drifting detector (SDD) is calculated：For the special case of a spiral spacing, i.e.,
Spacing p (r) withIt is directly proportional：
Wherein p1It is the spacing of first lap, r1It is the radius of first lap, they can be determined in design, in such case
Under, the spiral-shaped cathode of silicon drifting detector (SDD) can be determined by following equation：
WhereinThe rotation angle increased continuously when being spiral rotating；The width of the spiral-shaped cathode of silicon drifting detector (SDD)
It is distributed as：
Wherein, ρsIt is the square resistance of spiral-shaped cathode ion implanted layer, I is the total current of spiral-shaped cathode, and α is
It is determined by the geometry of spiral cathode, but in practical applications in order to form overall compact silicon drifting detector (SDD) array,
It is spiral-shaped to hank subcircular, such as regular hexagon (α=6), or square
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (2)
1. a kind of design method of the two-sided silicon drifting detector (SDD) of large area helical form hexagon, which is characterized in that the large area
The design method of the two-sided silicon drifting detector (SDD) of helical form hexagon, includes the following steps：
(1) potential of silicon drifting detector (SDD) front and rear surfaces is determined：
The inside drift field of cylindrical silicon drifting detector is related with two surface potential distributions up and down of detector, cylindrical
The negative potential of any point (r, x, θ) inside silicon drifting detector (SDD) should meet the following conditions：
Wherein, x is the coordinate of detector thickness direction, and r is the coordinate along cylinder radius direction, and θ is angular coordinate, is moored in this way
Loose measure journey can simplify as following form：
Wherein NeffIt is the Effective Doping concentration of SDD, the solution of equation (2) is：
Wherein, Vfd=qNDd2/2ε0ε is total depletion voltage, and d is the thickness of SDD, and Φ (r) and Ψ (r) are front and rear surfaces respectively
Potential (x=0 and x=d)：
Φ (r)=φ (r, x=0) and Ψ (r)=φ (r, x=d).
(2) from point S when proposed adoption mathematics variational calculation carrier drifts about in silicon drifting detector (SDD)1To point S2Best drift
Path：
It is assumed that the voltage's distribiuting of reverse side to positive voltage's distribiuting be it is directly proportional, have：
Ψ (r)=VB+ γ Φ (r) (0≤γ < 1) (5)
And then optimal drift path can be obtained；
(3) the constant drift field of best drift path is determined：Meeting along the electric field in best drift path is a constant, i.e.,
Edr,r(r,xch(r))=Edr,r, and the distribution of the surface potential of obtained constant drift field must be determined by following equation：
Its corresponding surface electric field distribution is：
VfdFor total depletion voltage, analyze it is found that constant drift field is determined by added voltage completely：
(4) width distribution of the spiral-shaped cathode of silicon drifting detector (SDD) is calculated：For the special case of a spiral spacing, i.e. spacing
P (r) withIt is directly proportional：
Wherein p1It is the spacing of first lap, r1It is the radius of first lap, they can be determined in design, in this case, silicon
The spiral-shaped cathode of drifting detector can be determined by following equation：
WhereinThe rotation angle increased continuously when being spiral rotating；The width distribution of the spiral-shaped cathode of silicon drifting detector (SDD)
For：
Wherein, ρsIt is the square resistance of spiral-shaped cathode ion implanted layer, I is the total current of spiral-shaped cathode, and α is by spiral shell
The geometry decision of cathode is revolved, spiral-shaped is subcircular.
2. a kind of design method by the two-sided silicon drifting detector (SDD) of large area helical form hexagon described in claim 1 designs
The two-sided silicon drifting detector (SDD) of large area helical form hexagon, which is characterized in that the two-sided silicon of large area helical form hexagon
Drifting detector includes：Front anode electrode, front cathode electrode, front protecting ring, silicon body, the cathode electrode of reverse side, reverse side
Protection ring；
It is silicon dioxide layer between front protecting ring.
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Cited By (7)
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| CN109671798A (en) * | 2018-12-21 | 2019-04-23 | 中国科学院微电子研究所 | Drifting detector and preparation method thereof |
| CN109873049A (en) * | 2019-04-01 | 2019-06-11 | 湖南正芯微电子探测器有限公司 | Two-sided cathode helical ring gradual change type silicon drifting detector (SDD) and preparation method thereof |
| CN110350044A (en) * | 2019-04-01 | 2019-10-18 | 湖南正芯微电子探测器有限公司 | Square spiral silicon drifting detector (SDD) and preparation method thereof |
| CN112071873A (en) * | 2020-09-30 | 2020-12-11 | 湖南正芯微电子探测器有限公司 | Silicon drift detector and junction field effect transistor integrated chip and manufacturing method |
| CN112366237A (en) * | 2020-11-24 | 2021-02-12 | 湘潭大学 | Silicon drift detector capable of autonomously dividing voltage and design method thereof |
| CN115084288A (en) * | 2022-06-24 | 2022-09-20 | 鲁东大学 | Spiral silicon drift detector and design method |
| CN116741845A (en) * | 2023-06-09 | 2023-09-12 | 湘潭大学 | Equal-clearance spiral ring large-area silicon drift detector with controllable clearance gap |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109671798A (en) * | 2018-12-21 | 2019-04-23 | 中国科学院微电子研究所 | Drifting detector and preparation method thereof |
| CN109873049A (en) * | 2019-04-01 | 2019-06-11 | 湖南正芯微电子探测器有限公司 | Two-sided cathode helical ring gradual change type silicon drifting detector (SDD) and preparation method thereof |
| CN110350044A (en) * | 2019-04-01 | 2019-10-18 | 湖南正芯微电子探测器有限公司 | Square spiral silicon drifting detector (SDD) and preparation method thereof |
| CN109873049B (en) * | 2019-04-01 | 2024-01-05 | 湖南正芯微电子探测器有限公司 | Double-sided cathode spiral ring gradual change type silicon drift detector and preparation method thereof |
| CN110350044B (en) * | 2019-04-01 | 2024-04-19 | 湖南脉探芯半导体科技有限公司 | Square spiral silicon drift detector and preparation method thereof |
| CN112071873A (en) * | 2020-09-30 | 2020-12-11 | 湖南正芯微电子探测器有限公司 | Silicon drift detector and junction field effect transistor integrated chip and manufacturing method |
| CN112366237A (en) * | 2020-11-24 | 2021-02-12 | 湘潭大学 | Silicon drift detector capable of autonomously dividing voltage and design method thereof |
| CN115084288A (en) * | 2022-06-24 | 2022-09-20 | 鲁东大学 | Spiral silicon drift detector and design method |
| CN116741845A (en) * | 2023-06-09 | 2023-09-12 | 湘潭大学 | Equal-clearance spiral ring large-area silicon drift detector with controllable clearance gap |
| CN116741845B (en) * | 2023-06-09 | 2024-06-11 | 湘潭大学 | Equal-clearance spiral ring large-area silicon drift detector with controllable clearance gap |
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Application publication date: 20181130 |