CN207134369U - A kind of triangle drives entire formula cell type electrode-semiconductor detector - Google Patents
A kind of triangle drives entire formula cell type electrode-semiconductor detector Download PDFInfo
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- CN207134369U CN207134369U CN201720888244.7U CN201720888244U CN207134369U CN 207134369 U CN207134369 U CN 207134369U CN 201720888244 U CN201720888244 U CN 201720888244U CN 207134369 U CN207134369 U CN 207134369U
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Abstract
A kind of triangle drives entire formula cell type electrode-semiconductor detector, the triangle drives entire formula cell type electrode-semiconductor detector, by semiconductor substrate, and the trench electrode composition nested with central cylindrical electrode that semiconductor substrate etching forms, trench electrode is the rhombus column overlapped to form by two equilateral triangle bases, each corresponding two central cylindrical electrodes of trench electrode, two central cylindrical electrodes are arranged on the center of two equilateral triangles, trench electrode and central cylindrical electrode are hollow electrode, ion is carried out again after etched to diffuse to form, the triangle is opened in the trench electrode and central cylindrical electrode of entire formula cell type electrode-semiconductor detector top surface covered with contact electrode layer, top surface other semiconductor portions covering silicon dioxide insulating layer, bottom surface is provided with silicon dioxide liner bottom.The utility model deadband eliminating, etching technics be through etching technics, during work, particle can two-side incidence, reaction is sensitiveer, and detection efficient is higher.
Description
Technical field
High-energy physics is the utility model is related to, astrophysics, Aero-Space are military, the semiconductor of the technical field such as medical science
Detector field, more particularly to a kind of triangle drive entire formula cell type electrode-semiconductor detector.
Background technology
Semiconductor detector is mainly used in the fields such as high-energy physics, astrophysics, has high energy resolution, highly sensitive
Degree, the features such as response time is fast, Radiation hardness is strong, and be easily integrated, the field such as detecting in X ray, high energy particle has significantly
Application value.In the field such as high-energy physics and astrophysics, detector is under intense radiation conditions and worked, to semiconductor detector
Energy resolution response speed etc. requires high, and has low-leakage current and low total depletion voltage, has not for its volume size etc.
With requirement.
Semiconductor detector works under reverse bias, when particle injects detector sensitive volume, under reverse bias, production
Raw electron-hole pair, wherein electronics after reaching positive pole to positive polar motion, being collected, hole is received to being moved to negative pole by negative pole
Collection, electric signal etc. is formed in outside reading circuit.
Relative to traditional " three-dimensional column electrode-semiconductor detector ", the literary newest proposition in laboratory in U.S.'s Brooker sea
" three-dimensional trench electrode semiconductor detector " overcomes " saddle point " of Potential Distributing and Electric Field Distribution, makes Electric Field Distribution more equal
It is even.However, " three-dimensional trench electrode semiconductor detector " because of the limitation of design, to form substrate in technique, in electrode etch
Shi Buneng is completely through whole semiconductor, and the partial electric-field distribution not etched is weaker, and distribution of charges is uneven, and detection efficient is low,
It is big to the performance impact of detector.Our this part is referred to as " dead band ", and " dead band " accounts for 20%- in single detector unit
30%.If making array, bigger ratio can be occupied.Moreover, when " three-dimensional trench electrode semiconductor detector " works, particle
One side incidence is only capable of, detection efficient can be reduced.
Therefore it provides a kind of triangle drives entire formula cell type electrode-semiconductor detector, solve existing for above-mentioned prior art
Problem.
Utility model content
To solve the above-mentioned problems of the prior art, the purpose of this utility model is that providing a kind of triangle opens entire formula
Cell type electrode-semiconductor detector.Optimize structure type, deadband eliminating, optimization one side etching technics is through etching technics, work
When making, particle can two-side incidence, reaction it is sensitiveer, detection efficient is higher.
To reach above-mentioned purpose, the technical solution of the utility model is：
A kind of triangle drives entire formula cell type electrode-semiconductor detector, and the triangle opens entire formula cell type electrode-semiconductor detection
Device, the trench electrode 2 formed composition nested with central cylindrical electrode 3, groove are etched by semiconductor substrate 1, and semiconductor substrate 1
Electrode 2 is the rhombus column overlapped to form by two equilateral triangle bases, and each trench electrode 2 corresponds to two central cylindrical electrodes
3, two central cylindrical electrodes 3 are arranged on the center of two equilateral triangles, and trench electrode 2 and central cylindrical electrode 3 are hollow
Electrode, ion is carried out again after etched and is diffuseed to form, semiconductor substrate 1 uses lightly-doped silicon, trench electrode 2 and central cylindrical
Electrode 3 uses heavily doped silicon, wherein, the P/N types of trench electrode 2 and central cylindrical electrode 3 are on the contrary, the triangle opens entire formula box
Covered with contact electrode layer 4 in the trench electrode 2 and central cylindrical electrode 3 of type electrode-semiconductor detector top surface, top surface does not cover
Other surfaces of semiconductor substrate 1 covering silicon dioxide insulating layer 5 of lid contact electrode layer 4, bottom surface is provided with silicon dioxide substrates
Layer 6.There is twill-like entity gap four sides center of the rhombus column of trench electrode 2, and triangle opens entire formula cell type electrode-semiconductor
For detector using trench electrode summit as the center of circle on the basis of twill-like semiconductor substrate, the width in twill-like entity gap is half
Circle is done in footpath, and the semiconductor substrate outside circular arc is all etched into electrode, so as to leave the twill body semiconductor substrate with arcuation.
Further, the trench electrode 2 and central cylindrical electrode 3 by semiconductor substrate 1 by being mixed through etching, diffusion
Miscellaneous method prepares to be formed；Detector is a PIN junction：P-type semiconductor-insulating barrier-N-type semiconductor shape, wherein, heavy doping
The resistivity of P/N type semiconductor silicons is different from the P/N semiconductor silicons being lightly doped, and is performed etching on semiconductor substrate, forms ditch
Groove electrode 2 and central cylindrical electrode 3, then trench electrode 2 is using N-type silicon heavy doping, and central cylindrical electrode 3 is using P-type silicon weight
Doping, semiconductor substrate 1 are lightly doped using p-type.
Further, the detector thickness is that electrode height is 100-300 microns.
Further, the detector thickness is 150 microns.
Further, central cylindrical electrode 3 and the width of trench electrode 2 are 10 microns.
Further, the contact electrode layer 4 is aluminium electrode contact layer；The contact electrode layer thickness is 1 micron, described
Silicon dioxide substrates thickness degree is 1 micron, and the thickness of silicon dioxide insulating layer 5 is 1 micron.
Further, the triangle opens electrode of the entire formula cell type electrode-semiconductor detector by shared trench electrode 2
The split of wall energy forms M*N detector arrays, and wherein M, N are positive integer.
Further, the semi-conducting material of the semiconductor substrate 1 uses Si, Ge, HgI2、GaAs、TiBr、CdTe、
CdZnTe、CdSe、GaP、HgS、PbI2With one or more combinations in AlSb.
Relative to prior art, the beneficial effects of the utility model are：
The utility model optimizes the structure type of electrode-semiconductor detector, eliminates dead band, optimization one side etching work
Skill be through etching technics, during work, particle can two-side incidence, reaction is sensitiveer, and detection efficient is higher.
Brief description of the drawings
Fig. 1 is the three dimensional structure diagram that the utility model triangle drives entire formula cell type electrode-semiconductor detector.
Fig. 2 is the top electrode contact layer and dioxy that the utility model triangle drives entire formula cell type electrode-semiconductor detector
SiClx insulating barrier schematic diagram.
Fig. 3 is that the utility model triangle opens entire formula cell type electrode-semiconductor detector 4x4 array plane figures.
Fig. 4 is that the utility model triangle opens entire formula cell type electrode-semiconductor detector 4x4 cubical array figures.
Fig. 5 is the side view that the utility model triangle drives entire formula cell type electrode-semiconductor detector.
Wherein, 1- semiconductor substrates, 2- trench electrodes, 3- central cylindrical electrodes, 4- contact electrode layers, 5- silica are exhausted
Edge layer, 6- silicon dioxide liner bottoms.
Embodiment
Technical solutions of the utility model are described in further detail with reference to the accompanying drawings and detailed description：
As Figure 1-5, a kind of triangle drives entire formula cell type electrode-semiconductor detector, and the triangle opens entire formula cell type electricity
Pole semiconductor detector, the trench electrode 2 formed and central cylindrical electrode 3 are etched by semiconductor substrate 1, and semiconductor substrate 1
Nesting is formed, and trench electrode 2 is the rhombus column overlapped to form by two equilateral triangle bases, and each trench electrode 2 corresponds to two
Individual central cylindrical electrode 3, two central cylindrical electrodes 3 are arranged on the center of two equilateral triangles, trench electrode 2 and central rods
Shape electrode 3 is hollow electrode, and carrying out ion again after etched diffuses to form, and semiconductor substrate 1 uses lightly-doped silicon, groove electricity
Pole 2 and central cylindrical electrode 3 use heavily doped silicon, wherein, the P/N types of trench electrode 2 and central cylindrical electrode 3 are on the contrary, described
Triangle is opened to be connect in the trench electrode 2 and central cylindrical electrode 3 of entire formula cell type electrode-semiconductor detector top surface covered with electrode
Contact layer 4, other surfaces of semiconductor substrate 1 covering silicon dioxide insulating layer 5 of top surface uncovered electrode contact layer 4, bottom surface is set
There is silicon dioxide liner bottom 6.There is twill-like entity gap four sides center of the rhombus column of trench electrode 2, and triangle opens entire formula
Cell type electrode-semiconductor detector on the basis of twill-like semiconductor substrate using trench electrode summit as the center of circle, twill-like entity
The width in gap is that radius does circle, and the semiconductor substrate outside circular arc is all etched into electrode, so as to leave the twill body with arcuation half
Conductor matrix.The purpose for the arrangement is that being easy to multiple combination arrays to form an entirety, while its detection effect is not influenceed as far as possible again
Fruit, by the connection in twill-like entity gap, avoid causing structure to come off because of etching.
Further, the trench electrode 2 and central cylindrical electrode 3 by semiconductor substrate 1 by being mixed through etching, diffusion
Miscellaneous method prepares to be formed；Detector is a PIN junction：P-type semiconductor-insulating barrier-N-type semiconductor shape, wherein, heavy doping
The resistivity of P/N type semiconductor silicons is different from the P/N semiconductor silicons being lightly doped, and is performed etching on semiconductor substrate, forms ditch
Groove electrode 2 and central cylindrical electrode 3, then trench electrode 2 is using N-type silicon heavy doping, and central cylindrical electrode 3 is using P-type silicon weight
Doping, semiconductor substrate 1 are lightly doped using p-type.
Further, the detector thickness is that electrode height is 100-300 microns.
Further, the detector thickness is 150 microns.
Further, central cylindrical electrode 3 and the width of trench electrode 2 are 10 microns.
Further, the contact electrode layer 4 is aluminium electrode contact layer；The contact electrode layer thickness is 1 micron, described
Silicon dioxide substrates thickness degree is 1 micron, and the thickness of silicon dioxide insulating layer 5 is 1 micron.
Further, the triangle opens electrode of the entire formula cell type electrode-semiconductor detector by shared trench electrode 2
The split of wall energy forms M*N detector arrays, and wherein M, N are positive integer.
Further, the semi-conducting material of the semiconductor substrate 1 uses Si, Ge, HgI2、GaAs、TiBr、CdTe、
CdZnTe、CdSe、GaP、HgS、PbI2With one or more combinations in AlSb.
Operation principle of the present utility model is：
It is that a kind of triangle drives entire formula cell type electrode-semiconductor detector as shown in Figure 1.Fig. 2 is sectional view, trench electrode 2
With central cylindrical electrode 3 on semiconductor substrate 1 by preparing and to be formed through etching, the method for diffusing, doping.According to existing work
Skill technology, detector thickness are electrode height in 100 to 300 microns of arbitrary values.Trench electrode 2 is surrounded on central cylindrical electricity
Outside pole 3, wherein, central cylindrical electrode 3 and the width of trench electrode 2 are 10 microns, and trench electrode 2 is hollow electrode.Groove
Two valves that electrode 2 is etched into that structure is similar and taken concerted action in structure.The novel triangle opens entire formula cell type electrode-semiconductor
Covered with contact electrode layer on the top electrode of detector, other area covering silicon dioxide insulating layers, bottom surface is provided with dioxy
Silicon substrate layer.The contact electrode layer is aluminium electrode contact layer.The contact electrode layer thickness is 1 micron, the titanium dioxide
Layer-of-substrate silicon thickness is 1 micron.Preparation-obtained semiconductor detector can by share trench electrode 2 electrode wall can group
Into M*N detector arrays, wherein M, N is positive integer.
Fig. 3 is that novel triangle opens entire formula cell type electrode-semiconductor detector array plan, and its array may be implemented in sky
Between arrangement between square detector array and hexagon detector array.Fig. 4 is that novel triangle opens entire formula cell type electrode
Semiconductor detector cubical array figure.The new detector is in addition to being adapted in general silicon semiconductor material, it is possible to use various
Other semi-conducting material manufacturings.Such as：From Ge, HgI2, GaAs, TiBr, CdTe, CdZnTe, CdSe, GaP, HgS, PbI2 and AlSb
Deng.
There is twill-like entity gap four sides center of the rhombus column of trench electrode 2, and triangle opens entire formula cell type electrode half
Conductor detector on the basis of twill-like semiconductor substrate using trench electrode summit as the center of circle, the width in twill-like entity gap
Circle is done for radius, and the semiconductor substrate outside circular arc is all etched into electrode, so as to leave the twill body semiconductor substrate with arcuation.It is
The semiconductor substrate stayed is not etched away completely when etching electrode, it is therefore intended that, when electrode is through etching, semiconductor substrate 1
It can be contacted by the matrix of this part with other units or peripheral wafer, so as to not fall out, from the source of design optimization
It is upper to solve the problems, such as making.
Each detector cells are a PIN junctions：P-type semiconductor-insulating barrier-N-type semiconductor shape, wherein, heavy doping
The resistivity of P/N type semiconductor silicons is different from the P/N semiconductor silicons being lightly doped, and is performed etching on semiconductor substrate, hollow ditch
Groove and hollow center post, heavy doping is then carried out to form anodic-cathodic.In order to obtain optimal detector performance, semiconductor is taken
Matrix is the P-type semiconductor silicon being lightly doped, and PN junction is used in structure design at peripheral groove.Trench electrode is that N-type silicon is heavily doped
Miscellaneous, contre electrode is P-type silicon heavy doping, and material for detector is the silicon that p-type is lightly doped.Contre electrode is negative pole, and exterior channels are
Positive pole.
It is described above, only specific embodiment of the present utility model, but the scope of protection of the utility model is not limited to
In this, any change or replacement expected without creative work, should all cover within the scope of protection of the utility model.
Therefore, the scope of protection of the utility model should be determined by the scope of protection defined in the claims.
Claims (8)
1. a kind of triangle drives entire formula cell type electrode-semiconductor detector, it is characterised in that the triangle opens entire formula cell type electrode
Semiconductor detector, the trench electrode (2) formed and central cylindrical electricity are etched by semiconductor substrate (1), and semiconductor substrate (1)
Pole (3) is nested to be formed, and trench electrode (2) is the rhombus column overlapped to form by two equilateral triangle bases, each trench electrode
(2) corresponding two central cylindrical electrodes (3), two central cylindrical electrodes (3) are arranged on the center of two equilateral triangles, groove
Electrode (2) and central cylindrical electrode (3) are hollow electrode, and carrying out ion again after etched diffuses to form, semiconductor substrate (1)
Using lightly-doped silicon, trench electrode (2) and central cylindrical electrode (3) use heavily doped silicon, wherein, trench electrode (2) and center
The P/N types of columnar electrode (3) are on the contrary, the triangle opens the trench electrode (2) of entire formula cell type electrode-semiconductor detector top surface
With it is semiconductor-based covered with contact electrode layer (4), other of top surface uncovered electrode contact layer (4) on central cylindrical electrode (3)
Body (1) surface covering silicon dioxide insulating layer (5), bottom surface is provided with silicon dioxide liner bottom (6), trench electrode (2) rhombus column
Four sides center have twill-like entity gap, triangle drives entire formula cell type electrode-semiconductor detector in twill-like semiconductor
Using trench electrode summit as the center of circle on the basis of matrix, the width in twill-like entity gap does circle for radius, partly leading outside circular arc
Body matrix is all etched into electrode, so as to leave the twill body semiconductor substrate with arcuation.
2. a kind of triangle according to claim 1 drives entire formula cell type electrode-semiconductor detector, it is characterised in that described
Trench electrode (2) and central cylindrical electrode (3) are passed through through etching, the method for diffusing, doping preparation shape by semiconductor substrate (1)
Into detector is a PIN junction：P-type semiconductor-insulating barrier-N-type semiconductor shape, wherein, the P/N type semiconductor silicons of heavy doping
Resistivity it is different from the P/N semiconductor silicons being lightly doped, performed etching on semiconductor substrate, formed trench electrode (2) and in
Columnar electrode (3) is entreated, then trench electrode (2) uses N-type silicon heavy doping, and central cylindrical electrode (3) uses P-type silicon heavy doping,
The semiconductor substrate (1) is lightly doped using p-type.
3. a kind of triangle according to claim 1 drives entire formula cell type electrode-semiconductor detector, it is characterised in that described
Detector thickness is that electrode height is 100-300 microns.
4. a kind of triangle according to claim 3 drives entire formula cell type electrode-semiconductor detector, it is characterised in that described
Detector thickness is 150 microns.
5. a kind of triangle according to claim 1 drives entire formula cell type electrode-semiconductor detector, it is characterised in that center
Columnar electrode (3) and trench electrode (2) width are 10 microns.
6. a kind of triangle according to claim 1 drives entire formula cell type electrode-semiconductor detector, it is characterised in that oblique
Using trench electrode summit as the center of circle on the basis of line shape semiconductor substrate, the width in twill-like entity gap does circle for radius, circle
Semiconductor substrate outside arc is all etched into electrode, so as to leave the twill body semiconductor substrate with arcuation.
7. a kind of triangle according to claim 1 drives entire formula cell type electrode-semiconductor detector, it is characterised in that described
Contact electrode layer (4) is aluminium electrode contact layer；The contact electrode layer thickness is 1 micron, the silicon dioxide substrates thickness degree
For 1 micron, silicon dioxide insulating layer (5) thickness is 1 micron.
8. a kind of triangle according to claim 1 drives entire formula cell type electrode-semiconductor detector, it is characterised in that described
Triangle opens electrode wall energy split of the entire formula cell type electrode-semiconductor detector by sharing trench electrode (2) and forms M*N arrays
Detector, wherein M, N are positive integer.
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| CN201720888244.7U CN207134369U (en) | 2017-07-21 | 2017-07-21 | A kind of triangle drives entire formula cell type electrode-semiconductor detector |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107256905A (en) * | 2017-07-21 | 2017-10-17 | 湘潭大学 | A kind of triangle drives entire formula cell type electrode-semiconductor detector |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107256905A (en) * | 2017-07-21 | 2017-10-17 | 湘潭大学 | A kind of triangle drives entire formula cell type electrode-semiconductor detector |
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