CN108428750A - A kind of square opens entire formula cell type electrode-semiconductor detector - Google Patents
A kind of square opens entire formula cell type electrode-semiconductor detector Download PDFInfo
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- CN108428750A CN108428750A CN201810299187.8A CN201810299187A CN108428750A CN 108428750 A CN108428750 A CN 108428750A CN 201810299187 A CN201810299187 A CN 201810299187A CN 108428750 A CN108428750 A CN 108428750A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 78
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- 238000005530 etching Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 26
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 238000001514 detection method Methods 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 230000000295 complement effect Effects 0.000 claims description 5
- 229910017115 AlSb Inorganic materials 0.000 claims description 4
- 229910004613 CdTe Inorganic materials 0.000 claims description 4
- 229910004611 CdZnTe Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 238000003491 array Methods 0.000 claims description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- YFDLHELOZYVNJE-UHFFFAOYSA-L mercury diiodide Chemical compound I[Hg]I YFDLHELOZYVNJE-UHFFFAOYSA-L 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 51
- 238000000608 laser ablation Methods 0.000 abstract description 21
- 239000010410 layer Substances 0.000 abstract description 16
- 239000002184 metal Substances 0.000 abstract description 10
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 239000011241 protective layer Substances 0.000 abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 5
- 229920005591 polysilicon Polymers 0.000 abstract description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052796 boron Inorganic materials 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 3
- 238000001465 metallisation Methods 0.000 abstract description 3
- 238000005498 polishing Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 21
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 9
- 238000009826 distribution Methods 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- -1 Zinc oxide compound Chemical class 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
It is a kind of it is rectangular open entire formula cell type electrode-semiconductor detector, one, leave silicon chip gap between semiconductor crystal wafer front laser ablation three-dimensional groove, groove, be d in the fronts the wafer D laser ablation thickness of long good certain thickness oxide protective layer FtopGroove A, there are the twill-like silicon body B of one fixed width between groove；Wherein, twill-like silicon body B is the fraction silicon body left after wafer D is etched；By laser, the diffusing, doping after etching silicon body obtains central cylindrical electrode C；Two, there is no silicon chip gap between silicon wafer reverse side laser ablation three-dimensional groove groove：Three, made using polishing technology smooth around trench wall：Four, along the boron diffusing, doping five of trench wall, the three-dimensional groove of filling：Six, front laser deep etching central cylindrical electrode：Seven, with polysilicon or metal filling central cylindrical electrode C；Eight, to all electrode metallizations layers.
Description
Technical field
Patent of the present invention belongs to high-energy physics, and astrophysics, aerospace is military, the technical fields such as medicine, more particularly to
A kind of square opens entire formula cell type electrode-semiconductor detector.
Background technology
Detector is mainly used for high-energy physics, astrophysics etc., silicon detector detectivity height, fast response time, tool
There is very strong Radiation hardness, and be easily integrated, has significant application value with fields such as X-ray checks in high energy particle detection.
But traditional " three-dimensional silicon detector " there are many deficiency, in high-energy physics and astrophysics, detector is under strong radiation parameter
Work, this has high requirement to detector energy resolution ratio response speed etc., and need to have stronger Radiation hardness, Low dark curient
Stream and low total depletion voltage, have the size of its volume different requirements.
Silicon detector be work under reverse bias, when external particles enter the sensitive volume of detector, reversed
Under bias effect, the electron-hole pair of generation is separated, and electronics is collected after reaching anode to positive polar motion, and hole is to negative
Polar motion is collected by cathode, and the electric signal of reflection particle information can be formed in external circuit.
Existing " three-dimensional trench electrode silicon detector " cannot completely run through entire silicon body when carrying out electrode etch, this
Allowing for detector, some cannot be etched, this part influences greatly the performance of detector, for example the partial electric-field is weaker,
Phenomena such as distribution of charges is uneven, and detection efficient reduces.Our this part is referred to as " dead zone ", and " dead zone " is individually detecting
20%-30% is occupied in device, if being made as array, can occupy the ratio of bigger.Secondly, " three-dimensional trench electrode silicon detection
Device " can only be performed etching in single side.Finally, this detector at work, particle can only single side it is incident, influence detection effect
Rate.
For this purpose, providing a kind of square opens entire formula cell type electrode-semiconductor detector, above-mentioned of the existing technology ask is solved
Topic.
Invention content
The invention discloses a kind of squares to open entire formula cell type electrode-semiconductor detector, the detection being prepared in the present invention
There are twill-like semiconductor substrates in etching groove electrode for volume of the device less than 10, are used for detector when technique is realized
Unit is directly connected with each other.Rest part is perforative trench electrode, further increases the detection efficient of detector.
Design is improved to the volume less than 10 there are twill-like semiconductor substrate in the present invention, this part is partly led
Body matrix can realize condition as the technique of two detector cells of connection, and relative to existing patent, " one kind opening entire formula cell type
The dead zone area of electrode-semiconductor detector ", this patent reduces 90% on the basis of patent before.
Based on existing patent " one kind opening entire formula cell type electrode-semiconductor the detector " (patent No.：201620384599.8),
Panel detector structure is advanced optimized, the thickness of twill-like semiconductor is thinning, the detection efficient of detector is improved, and elaborate
This kind of rectangular process implementation method for opening entire formula cell type electrode silicon detector.The detector is in addition to being suitble to general silicon semiconductor material
Material is outer, it is possible to use various other semi-conducting material manufacturings.Such as：From Ge, HgI2、GaAs、TiBr、CdTe、CdZnTe、CdSe、
GaP、HgS、PbI2With AlSb etc..This process implementation method uses laser ablation three-dimensional trench technique.
In order to achieve the above objectives, the solution of the present invention is：
A kind of square opens entire formula cell type electrode-semiconductor detector, including positive trench electrode (2), reverse side trench electrode
(5) and central cylindrical electrode (3), wherein positive trench electrode (2), reverse side trench electrode (5) and central cylindrical electrode (3) are by partly
Conductor matrix (1) is prepared and to be formed by etching, the method for diffusing, doping, positive trench electrode (2) and reverse side trench electrode (5) ring
It is around in except central cylindrical electrode (3), wherein positive trench electrode (2) and reverse side trench electrode (5) are rectangular hollow electrode；
Positive trench electrode (2) is etched into that structure is identical, and two halves complementary each other in structure, does not have between positive trench electrode (2)
The part of etching forms twill-like semiconductor substrate (4), and twill-like semiconductor substrate (4) width is less than 10 μm；Front groove
Contact electrode layer is covered on electrode (2) and central cylindrical electrode (3), other of positive uncovered electrode contact layer are semiconductor-based
Body (1) surface covers silicon dioxide insulating layer, and bottom surface is provided with silicon dioxide liner bottom.
Further, the thickness of the positive trench electrode (2) is less than 1/10th of detector whole height.
Further, the square open entire formula cell type electrode-semiconductor detector can be by sharing positive trench electrode
(2) detector array of electrode wall composition M*N arrays.
Further, semiconductor substrate (1) material is using silicon, silica, Ge, HgI2、 GaAs、TiBr、CdTe、
CdZnTe、CdSe、GaP、HgS、PbI2Or one or more combinations in AlSb.
A kind of above-mentioned square opens the preparation method of entire formula cell type electrode-semiconductor detector, includes the following steps：
Step 1: in semiconductor crystal wafer front laser ablation three-dimensional groove, silicon chip gap is left between groove, is being grown
The fronts the wafer D laser ablation thickness of certain thickness oxide protective layer F is dtopGroove A, there are a fixed widths between groove
The twill-like silicon body B of degree；Wherein, twill-like silicon body B is the fraction silicon body left after wafer D is etched；Central cylindrical electricity
By laser, the diffusing, doping after etching silicon body obtains pole C；
Step 2: there is no silicon chip gap between silicon wafer reverse side laser ablation three-dimensional groove groove：Long good certain
The wafer D reverse side laser ablation thickness of the silica of thickness is dbottomGroove E, wherein dbottomMore than or equal to 90%
Silicon wafer thickness d；Twill-like silicon body is not left after reverse side laser ablation groove；
Step 3: being made using polishing technology smooth around trench wall：This step is only implemented on silicon semiconductor or in deep etching
Other semiconductors of trench wall out-of-flatness, the semiconductor such as zinc oxide of some types can be caused not to have in laser ablation in the process
Damage, so there is no need to this steps；
Step 4: along the boron diffusing, doping of trench wall：This step only implement silicon semiconductor or with silicon kin half
On conductor, doping thickness is 1 micron；
Step 5: the three-dimensional groove of filling：Silicon semiconductor wafer is filled using polysilicon, is partly led using metal filling zinc oxide
Body wafer；Region A ' and E ' after filling indicate that trench electrode is formed；
Step 6: front laser deep etching central cylindrical electrode：Etch thicknesses are the thickness d of monoblock wafer, etch width
It is 10 microns；
Step 7: with polysilicon or metal filling central cylindrical electrode C；
Step 8: giving all electrode metallizations layers：Front is metal layer K, and reverse side is metal layer L.
Further, in the step 1, the oxide protective layer F is silicon dioxide layer.
Further, in the step 1, the groove A width is 10 microns.
Further, silicon in the step 3, diamond class list material element semiconductor need to polish and carry out groove
The diffusing, doping of wall；Zinc oxide compound semiconductor is then not necessarily to carry out the processing step.
Further, in the step 6, the central cylindrical electrode is rectangular.
Further, the method operates completion in hundred grades of toilets of constant temperature and humidity.
Further, panel detector structure described in the above method is：Positive trench electrode 2 and reverse side trench electrode 5 are in
Centre columnar electrode 3 is prepared and is formed by etching, the method for diffusing, doping by semiconductor substrate 1, positive trench electrode 2 and reverse side ditch
Slot electrode 5 is surrounded on except central cylindrical electrode 3, wherein positive trench electrode 2 and reverse side trench electrode 5 are electric for rectangular hollow
Pole.Thickness trench electrode 2 of the front less than 10 is etched into that structure is identical, and two halves complementary each other in structure, in ditch
Twill-like semiconductor substrate 4 is formed without etched portions between slot electrode 2, and 4 width of twill-like semiconductor substrate is less than 10 μm.Institute
The entire formula cell type electrode-semiconductor detector of opening being prepared can be M*N gusts composable by sharing the electrode wall of trench electrode 2
Row detector.
Compared with the existing technology, beneficial effects of the present invention are：
There are twill-like semiconductor substrates in etching groove electrode for volume of the detector less than 10, are used for technique
Detector cells are directly connected with each other when realization.Rest part is perforative trench electrode, further increases detector
Detection efficient.
Design is improved to the volume less than 10 there are twill-like semiconductor substrate in the present invention, this part is partly led
Body matrix can realize condition as the technique of two detector cells of connection, and relative to existing patent, " one kind opening entire formula cell type
The dead zone area of electrode-semiconductor detector ", this patent reduces 90% on the basis of patent before.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
Obtain other attached drawings according to these attached drawings.
Fig. 1 is wafer front laser ablation three-dimensional groove (silicon chip gap is left between groove) side view of the present invention.
Fig. 2 wafers front laser ablation three-dimensional groove (silicon chip gap is left between groove) vertical view.
Fig. 3 wafers reverse side laser ablation three-dimensional groove (silicon chip gap is not left between groove) side view.
Fig. 4 wafer reverse side laser ablation three-dimensional groove vertical views.
The boron diffusing, doping side view of Fig. 5 silicon wafer three-dimensional trench walls.
Fig. 6 forms three-dimensional trench electrode.
Fig. 7 etches central cylindrical electrode.
Fig. 8 forms central cylindrical electrode.
Fig. 9 metallized electrodes.
The schematic three dimensional views of Figure 10 detectors.
Figure 11 is the field distribution schematic diagram of positive trench electrode covering (carrying twill-like matrix) part.Semiconductor-based
The part that body is connect with peripheral groove electrode, field distribution is obviously perturbed, and the numerical value of electric field is lower, and forms
The existing fringing field region of fraction.
Figure 12 is the field distribution schematic diagram of reverse side trench electrode (electrode zone all etches) part.The section half
Field distribution in conductor matrix effective coverage is more smooth.This patent further increases the area of this part so that detector
Detection efficient improve.
In figure, 1：Semiconductor substrate, 2：Positive trench electrode (there are twill-like semiconductor substrates), 3：Central cylindrical electricity
Pole, 4：Twill-like semiconductor substrate, 5：Reverse side trench electrode (electrode zone all etches).
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As shown in figs. 1-12,
A kind of square opens entire formula cell type electrode-semiconductor detector, including positive trench electrode 2,5 and of reverse side trench electrode
Central cylindrical electrode 3, wherein positive trench electrode 2, reverse side trench electrode 5 and central cylindrical electrode 3 are led to by semiconductor substrate 1
Over etching, diffusing, doping method prepare to be formed, positive trench electrode 2 and reverse side trench electrode 5 are surrounded on central cylindrical electrode 3
Except, wherein positive trench electrode 2 and reverse side trench electrode 5 are rectangular hollow electrode；Positive trench electrode 2 is etched into structure
It is identical, and two halves complementary each other in structure, it is semiconductor-based that the part not etched between positive trench electrode 2 forms twill-like
Body 4, and 4 width of twill-like semiconductor substrate is less than 10 μm；It is covered with electrode on positive trench electrode 2 and central cylindrical electrode 3
Other 1 surfaces of semiconductor substrate of contact layer, positive uncovered electrode contact layer cover silicon dioxide insulating layer, and bottom surface is provided with
Silicon dioxide liner bottom.
Further, the thickness of the positive trench electrode 2 is less than 1/10th of detector whole height.
Further, the square open entire formula cell type electrode-semiconductor detector can be by sharing positive trench electrode
(2) detector array of electrode wall composition M*N arrays.
Further, 1 material of the semiconductor substrate is using silicon, silica, Ge, HgI2、GaAs、 TiBr、CdTe、
CdZnTe、CdSe、GaP、HgS、PbI2Or one or more combinations in AlSb.
A kind of square opens the preparation method of entire formula cell type electrode-semiconductor detector, includes the following steps：
1) semiconductor crystal wafer front laser ablation three-dimensional groove leaves silicon chip gap between groove：Long good certain thick
The fronts the wafer D laser ablation thickness of the oxide protective layer F of degree is dtopGroove A, width is about 10 microns.Fig. 2 is etching
Good later vertical view, by Fig. 2, it can be seen that, there are the twill-like silicon body B of one fixed width between groove.Wherein, B is that D is carved
The fraction silicon body left after erosion.By laser, the diffusing, doping after etching silicon body obtains central cylindrical electrode C, after specific steps
It is continuous to will be described in detail.
2) not silicon wafer reverse side laser ablation three-dimensional groove (not having silicon chip gap between groove)：As shown in Fig. 3, in length
The wafer D reverse side laser ablation thickness of good certain thickness silica is dbottomGroove E, wherein dbottomIt is more than or equal to
90% silicon wafer thickness d.Fig. 3 is side view.Fig. 4 is the upward view after etching.From fig. 4, it can be seen that reverse side laser incising etched groove
Twill-like silicon body is not left after slot.
3) made using lithographic technique smooth around trench wall：This step is only implemented on silicon semiconductor or during deep etching
Other semiconductors of trench wall out-of-flatness, the semiconductor such as zinc oxide of some types can be caused not to be damaged in laser ablation,
So there is no need to this steps.
4) along the boron diffusing, doping of trench wall：This step only implement silicon semiconductor or with the kin semiconductor of silicon
On, doping thickness is 1 micron.
5) three-dimensional groove is filled：Silicon semiconductor wafer is filled using polysilicon, it is brilliant using metal filling zinc oxide semi-conductor
Circle.Region A ' and E ' after filling indicate that trench electrode is formed
6) front laser deep etching central cylindrical electrode (rectangular)：Etch thicknesses are the thickness d of monoblock wafer, etch width
About 10 microns.
7) with polysilicon or metal filling central cylindrical electrode C.
8) all electrode metallizations layers are given：Front is metal layer K, and reverse side is metal layer L.
Further, the oxide protective layer F is silicon dioxide layer.
In step 1) of the present invention, the thickness of detector is if 150 microns, then the thickness of twill-like silicon body is about 15 microns,
It how to be accurately controlled the remaining thickness of detector silicon body, and keeps the smoothness of detector trench electrode wall, for partly leading
System is made, and is a prodigious difficult point for especially ultrapure high resistant silicon semiconductor.The method that the present invention uses laser ablation,
The deficiency of the more efficient improvement conventional semiconductors deep etching of energy.
Meanwhile at present in semiconductor deep etching process, by taking silicon technology as an example, state-of-the-art lithographic technique in the world at present
It is to etch the protection that several microns just carry out trench electrode wall using the method protected in etching, continue to etch later.The party
Method step is complicated, and efficiency is low, and can not ensure to etch the smoothness of wall.The method of this patent uses laser ablation, etches degree
It is deep, bottom is disposably etched into, is polished the trench electrode wall of surrounding after etching.For some compound semiconductors,
Even without being polished.
The unit three-dimensional structural schematic diagram of detector is as follows：
Primary clustering symbol description:As shown in Figure 10, volume of the detector less than 10 is in etching groove electrode
There are twill-like semiconductor substrates, and detector cells are directly connected with each other when being realized for technique.Rest part is to run through
Trench electrode, further increase the detection efficient of detector.
Figure 10 is schematic three dimensional views, and oxide protective layer is not shown with metal layer.Positive trench electrode 2 and reverse side groove
Electrode 5 and central cylindrical electrode 3 are prepared and are formed by etching, the method for diffusing, doping by semiconductor substrate 1, positive trench electrode
2 and reverse side trench electrode 5 be surrounded on except central cylindrical electrode 3, wherein positive trench electrode 2 and reverse side trench electrode 5 are square
Shape hollow electrode.Thickness trench electrode 2 of the front less than 10 is etched into that structure is identical, and complementary each other two in structure
Half, twill-like semiconductor substrate 4 is formed without etched portions between trench electrode 2, and 4 width of twill-like semiconductor substrate is less than
10μm.It is preparation-obtained open entire formula cell type electrode-semiconductor detector can group by sharing the electrode wall of trench electrode 2
At M*N detector arrays.
Design is improved to the volume less than 10, and there are twill-like semiconductor substrates, this part semiconductor matrix can
Condition is realized using the technique as two detector cells of connection, and relative to existing patent, " one kind being opened entire formula cell type electrode and partly led
The dead zone area of bulk detector ", this patent reduces 90% on the basis of patent before.
The semiconductor detector processing step that step obtains through the invention is simple, and it is deep to abandon complicated unworkable tradition
Lithographic technique, using laser etching techniques so that it is simplified in making and repeatable strong to design complicated detector.
After adjusting various parameters, not only it can also be conducive to industrial batch production etc. in laboratory operation.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the scope of the present invention.It is all
Any modification, equivalent replacement, improvement and so within the spirit and principles in the present invention, are all contained in protection scope of the present invention
It is interior.
Claims (4)
1. one kind is rectangular to open entire formula cell type electrode-semiconductor detector, which is characterized in that including positive trench electrode (2), reverse side
Trench electrode (5) and central cylindrical electrode (3), wherein positive trench electrode (2), reverse side trench electrode (5) and central cylindrical electricity
Pole (3) is prepared and is formed by etching, the method for diffusing, doping by semiconductor substrate (1), positive trench electrode (2) and reverse side groove
Electrode (5) is surrounded on except central cylindrical electrode (3), wherein positive trench electrode (2) and reverse side trench electrode (5) are rectangle
Hollow electrode；Positive trench electrode (2) is etched into that structure is identical, and two halves complementary each other in structure, in positive trench electrode
(2) part not etched between forms twill-like semiconductor substrate (4), and twill-like semiconductor substrate (4) width is less than 10 μm；
Be covered with contact electrode layer on positive trench electrode (2) and central cylindrical electrode (3), positive uncovered electrode contact layer other
Semiconductor substrate (1) surface covers silicon dioxide insulating layer, and bottom surface is provided with silicon dioxide liner bottom.
2. rectangular entire formula cell type electrode-semiconductor detector is opened according to claim 1, which is characterized in that the front ditch
The thickness of slot electrode (2) is less than 1/10th of detector whole height.
3. rectangular entire formula cell type electrode-semiconductor detector is opened according to claim 1, which is characterized in that described is rectangular
The detection of M*N arrays can be formed by sharing the electrode wall of positive trench electrode (2) by opening entire formula cell type electrode-semiconductor detector
Device array.
4. rectangular entire formula cell type electrode-semiconductor detector is opened according to claim 1, which is characterized in that the semiconductor
Matrix (1) material is using silicon, silica, Ge, HgI2、GaAs、TiBr、CdTe、CdZnTe、CdSe、GaP、HgS、PbI2Or AlSb
In one or more combinations.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810299187.8A CN108428750B (en) | 2018-04-04 | 2018-04-04 | Square opening and closing type box-shaped electrode semiconductor detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810299187.8A CN108428750B (en) | 2018-04-04 | 2018-04-04 | Square opening and closing type box-shaped electrode semiconductor detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108428750A true CN108428750A (en) | 2018-08-21 |
| CN108428750B CN108428750B (en) | 2021-02-02 |
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| CN113659018A (en) * | 2021-08-16 | 2021-11-16 | 中国科学院微电子研究所 | Detector |
| CN113658962A (en) * | 2021-08-16 | 2021-11-16 | 中国科学院微电子研究所 | Detector and manufacturing method and device thereof |
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| CN113658962B (en) * | 2021-08-16 | 2024-04-19 | 中国科学院微电子研究所 | Detector, manufacturing method and device thereof |
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