CN109994453A - Embedding trapezoidal box-like three dimension detector - Google Patents
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- CN109994453A CN109994453A CN201910255279.0A CN201910255279A CN109994453A CN 109994453 A CN109994453 A CN 109994453A CN 201910255279 A CN201910255279 A CN 201910255279A CN 109994453 A CN109994453 A CN 109994453A
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- 239000011258 core-shell material Substances 0.000 claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000523 sample Substances 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 16
- 239000011159 matrix material Substances 0.000 claims abstract description 9
- 239000002245 particle Substances 0.000 claims description 12
- 230000005484 gravity Effects 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000007943 implant Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 239000003990 capacitor Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005025 nuclear technology Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Measurement Of Radiation (AREA)
Abstract
The invention discloses a kind of embedding trapezoidal box-like three dimension detectors, which is arranged by probe unit forms, and the shape of probe unit is in hexahedron, and upper and lower surface is rectangle, and four two opposite shapes of side are identical, are two rectangles and two isosceles trapezoids；Probe unit is that oxide layer b and metal layer b are successively coated on detector matrix, the ion implanting N-shaped heavily doped silicon on metal layer b, N-shaped heavily doped silicon extends outwardly growth along surrounding, form the side of probe unit, the shell that N-shaped heavily doped silicon surrounds is core-shell electrode, injects to form sensitive volume in core-shell electrode intermediate ion, the intermediate-ion at the top of sensitive volume is injected to form central passive electrode, have metal layer a on central passive electrode, has oxide layer a on sensitive volume；Detector prepared by the present invention, it is internal exist without dead zone, charge collection efficiency it is high, exhaust that voltage is low, capacitor is small, the signal noise of generation is small, and position resolution and energy resolution are high.
Description
Technical field
The invention belongs to three-dimensional silica detector technology fields, are related to a kind of embedding trapezoidal box-like three dimension detector.
Background technique
Detector is mainly used for the fields such as high-energy physics, astrophysics, aerospace, military affairs, medical technology, detects from 3D
Since device proposes, with its it is extremely low exhaust voltage, be widely used in fields such as high-energy physics experiments；But due to 3D detector electricity
Geometric center point electric field between pole is almost 0, then proposes that three-dimensional groove silicon detector improves 3D detector, but three
Dimension groove silicon detector still has a little shortcoming, such as: electrode does not extend through silicon body, and probe unit bottom has a layer thickness to be
The silicon substrate of detector integral thickness 10%, although silicon substrate plays the role of supporting probe unit, but dead zone ratio is big, due to
The influence of weak electric field, particle drift velocity very little in a silicon substrate, the particle of the capture of the deep energy level defect caused by intense radiation is very
More, charge collection efficiency is bad；And line up after array between each detector cells, electrical signal can be served as a contrast by 10% silicon
Bottom (existing fringing field area) interferes with each other, so that resolution ratio reduces；The central, cylindrical electrode surface area of three-dimensional groove silicon detector is very long,
Cause detector capacitor big, signal noise is big；The existing process equipment for manufacturing three-dimensional groove silicon detector is strictly limited with technology
The length of electrode has been made, and then has limited position resolution.
In order to improve the production technology and design feature of three-dimensional groove silicon detector, and then the deficiency present in it is improved,
The present invention provides a kind of embedding trapezoidal box-like three dimension detectors.
Summary of the invention
The present invention provides a kind of embedding trapezoidal box-like three dimension detector, and the structure of the detector is simple, to equipment nuclear technology
Requirement it is low, position resolution is high, will not influence each other between each probe unit, and the capacitor of electrode is small, and the noise of generation is small,
Charge collection efficiency is good.
The technical scheme adopted by the invention is that embedding trapezoidal box-like three dimension detector, is rearranged by probe unit, visit
Surveying unit includes detector matrix, and oxide layer b and metal layer b are successively coated on detector matrix, and ion is infused on metal layer b
Enter N-shaped heavily doped silicon, N-shaped heavily doped silicon extends outwardly along surrounding, forms the side of probe unit, and N-shaped heavily doped silicon surrounds
Shell is core-shell electrode, and sensitive volume is formed in core-shell electrode, and the top center ion implanting in sensitive volume forms central receipts
Collector has metal layer a on central passive electrode, has oxide layer a on sensitive volume.
Further, the position resolution of embedding trapezoidal box-like three dimension detector is calculated as shown in formula (1):
Wherein, σ is position resolution, and θ is the angle of core-shell electrode rectangle sides Yu oxide layer a, caused by Δ y is Δ K
Measurement error, K are the specific gravity that incoming particle generates signal in adjacent detector unit,Δ K is to read
Error caused by electronics, KiThe measured value that i-th measures, 1 < i < n, n is the number of measurement, d be sensitive volume thickness with
The summation of core-shell electrode bottom thickness, d2For the thickness of core-shell electrode bottom surface.
Further, the value range of the summation d of sensitive volume thickness and core-shell electrode bottom thickness is 300~500 μm, shell
Type electrode rectangle sides and the angle theta value range of oxide layer a are 45 °~90 °, and electricity is collected in core-shell electrode lateral thickness and center
Pole thickness is 5 μm.
The beneficial effects of the present invention are: the present invention uses adjacent detector units collecting signal specific gravity for position resolution
Element makes detector still have very high position resolution under biggish electrode spacing；The shape of three dimension detector is approximate
Spherical model, capacitor is low, leakage current is small, and the signal noise of generation is small；Three dimension detector is wrapped up by hull shape heavy doping electrode, interior
Portion exists without dead zone, and the collection efficiency of charge significantly improves；Due to the shielding action of hull shape heavy doping electrode, detector cells inspection
When surveying incoming particle, it will not be interfered with each other with other probe units, energy resolution is higher.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is embedding trapezoidal box-like three dimension detector structure chart.
Fig. 2 is the structural schematic diagram of probe unit.
Fig. 3 is the arrangement figure of adjacent detector unit.
In figure, 1. central passive electrodes, 2. metal layer a, 3. oxide layer a, 4. sensitive volumes, 5. core-shell electrodes, 6. metal layers
B, 7. oxide layer b, 8. detector matrixes.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
For the structure of embedding trapezoidal box-like three dimension detector probe unit as shown in Figure 1, shape is hexahedron, upper and lower surface is equal
It is rectangle, four sides opposite shape is identical, is two rectangles and two isosceles trapezoids；Embedding trapezoidal box-like three dimension detector is visited
The preparation process of unit is surveyed as shown in Fig. 2, probe unit is by detector matrix 8, core-shell electrode 5, central passive electrode 1 and sensitive
Area 4 forms, and detector matrix 8 is the rectangle that p-type lightly-doped silicon is formed, and is successively coated with oxide layer b7 on 8 surface of detector matrix
With metal layer b6, one layer of N-shaped heavily doped silicon of ion implanting on metal layer b6, N-shaped heavily doped silicon extends outwardly life along four edges
Long, after growth stops, filling forms sensitive volume 4, the material and detector of sensitive volume 4 in the shell that N-shaped heavily doped silicon is formed
The material of matrix 8 is consistent, and the shell that N-shaped heavily doped silicon is formed is core-shell electrode 5, external anode；Finally, being pushed up in sensitive volume 4
The central ion implanted with p-type heavily doped silicon in face forms the central passive electrode 1 of rectangle, external cathode, above central passive electrode 1
It is the oxide layer a3 with metal layer a2 uniform thickness with one layer of metal layer a2, around metal layer a2.
The structure of embedding trapezoidal box-like three dimension detector is simple, and requirement when preparation to process equipment and technology is low, meanwhile,
Core-shell electrode 5, central passive electrode 1 and sensitive volume 4 form closed space, so that the read-out electronics of probe unit will not
It interferes with each other, probe unit does not have dead zone, and the number of particles of deep energy level defect capture tails off, the charge-trapping effect of three dimension detector
Rate improves, and the electrical signal between three dimension detector adjacent detector unit will not interfere with each other, and position resolution improves；Three-dimensional detection
The central passive electrode 1 of device is small-sized, so that the capacitor of three dimension detector is small with leakage current, signal noise is small, energy resolution
Rate improves.
Probe unit shown in Fig. 3 according to carrying out rearranging three dimension detector, using the center of central passive electrode 1 as Y-axis
Origin, the path that particle generates electron-hole pair in three dimension detector is dotted portion in Fig. 3, utilizes adjacent detector unit
Signal specific gravity, calculate the position resolution of incoming particle, the number of electron-hole pair and the length in path are related, it is assumed that Y-axis
The y point of positive direction is the incoming position of MIP, and the signal that incoming particle generates in probe unit A is QA, in probe unit B
The signal Q of generationB, QA、QBIt is obtained by experiment measurement, then QAWith QBSpecific gravity K calculating such as formula c, 5 rectangle sides of core-shell electrode
It is calculated as shown in formula e with the tangent value of the angle theta of oxide layer a3:
Wherein, d is the summation of 4 thickness of sensitive volume Yu 5 bottom thickness of core-shell electrode, and the value range of d is 300~500 μm,
LCFor the electrode spacing of central passive electrode 1 and core-shell electrode 5, d2For the thickness of 5 bottom of core-shell electrode, 5 bottom of core-shell electrode thickness
Spend, d identical as side vertical direction thickness2=w/cos θ, w are the wall thickness of 5 side of core-shell electrode, 5 lateral thickness w of core-shell electrode
It is 5 μm with central 1 thickness t of passive electrode, S (y) is incident path of the incoming particle in probe unit A, d-d2- S (y) be into
Radion is in the incident path of probe unit B, and θ is the angle of core-shell electrode 5 rectangle sides and oxide layer a3, and value range is
45 °~90 °, specific mark schematic diagram is as shown in Figure 3.
It can be obtained by formula c and formula e:
WhereinΔ K is error caused by read-out electronics, KiIt is the measured value that i-th measures, 1
< i < n, n are the number of measurement, and Δ y is measurement error caused by Δ K；Then position resolution σ can be calculated with formula (1):
Embodiment 1
The angle theta of a kind of embedding trapezoidal box-like three dimension detector, 5 side of core-shell electrode and oxide layer a3 are 45 °, sensitive
4 L=10 μm of side isosceles trapezoid short side of area, it is assumed that particle is incident in the intersection of two probe units, visits after incident at two
The specific gravity K=0.5 for surveying produced signal in unit, works as d-d2It is 300 μm, Δ K=0.1, is calculated by formula (1) and know three-dimensional visit
The position resolution for surveying device is 13.33 μm.
Embodiment 2
The angle theta of a kind of embedding trapezoidal box-like three dimension detector, 5 side of core-shell electrode and oxide layer a3 are 90 °, sensitive
4 L=10 μm of side isosceles trapezoid short side of area, it is assumed that particle is incident in the intersection of two probe units, visits after incident at two
The specific gravity K=0.5 for surveying produced signal in unit, works as d-d2It is 300 μm, Δ K=0.1, is calculated by formula (1) and know three-dimensional visit
The position resolution for surveying device is 5 μm.
It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
Each embodiment in this specification is all made of relevant mode and describes, same and similar portion between each embodiment
Dividing may refer to each other, and each embodiment focuses on the differences from other embodiments.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the scope of the present invention.It is all
Any modification, equivalent replacement, improvement and so within the spirit and principles in the present invention, are all contained in protection scope of the present invention
It is interior.
Claims (3)
1. a kind of embedding trapezoidal box-like three dimension detector, which is characterized in that rearranged by probe unit, probe unit includes visiting
Survey device matrix (8), oxide layer b (7) and metal layer b (6) are successively coated on detector matrix (8), on metal layer b (6) from
Sub- implant n-type heavily doped silicon, N-shaped heavily doped silicon extend outwardly along four edges, form the side of probe unit, N-shaped heavily doped silicon
The shell surrounded is core-shell electrode (5), sensitive volume (4) is filled in core-shell electrode (5), in the top of sensitive volume (4)
Between ion implanting formed central passive electrode (1), on central passive electrode (1) have metal layer a (2), sensitive volume has on (4)
Oxide layer a (3).
2. embedding trapezoidal box-like three dimension detector according to claim 1, which is characterized in that described embedding trapezoidal box-like three
The position resolution of dimension detector is calculated as shown in formula (1):
Wherein, σ is position resolution, and θ is the angle of core-shell electrode (5) rectangle sides Yu oxide layer a (3), and Δ y is that Δ K causes
Measurement error, K is that incoming particle generates the specific gravity of signal in adjacent detector unit,Δ K is to read
Error caused by electronics out, KiIt is the measured value that i-th measures, 1 < i < n, n is the number of measurement, and d is sensitive volume (4) thickness
The summation of degree and core-shell electrode (5) bottom thickness, d2For the thickness of core-shell electrode (5) bottom surface.
3. embedding trapezoidal box-like three dimension detector according to claim 1 or 2, which is characterized in that the sensitive volume (4) is thick
The value range of degree and the summation d of core-shell electrode (5) bottom thickness are 300~500 μm, core-shell electrode (5) rectangle sides and oxygen
The angle theta value range for changing layer a (3) is 45 °~90 °, and core-shell electrode (5) lateral thickness and central passive electrode (1) thickness are equal
It is 5 μm.
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| CN201910255279.0A CN109994453A (en) | 2019-04-01 | 2019-04-01 | Embedding trapezoidal box-like three dimension detector |
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