CN105552113B - A kind of radiosensitive field-effect transistor and preparation method thereof - Google Patents
A kind of radiosensitive field-effect transistor and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 238000002353 field-effect transistor method Methods 0.000 title description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 26
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 230000005669 field effect Effects 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000001035 drying Methods 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 84
- 239000000126 substance Substances 0.000 claims description 10
- 238000012545 processing Methods 0.000 claims description 9
- 238000001039 wet etching Methods 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 3
- -1 boron ion Chemical class 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 claims description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 21
- 238000002955 isolation Methods 0.000 abstract description 7
- 239000002245 particle Substances 0.000 abstract description 7
- 238000001514 detection method Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 3
- 208000033999 Device damage Diseases 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 238000005468 ion implantation Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 7
- 238000013461 design Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- VJJVVKGSBWRFNP-UHFFFAOYSA-N [O].[Si](=O)=O Chemical compound [O].[Si](=O)=O VJJVVKGSBWRFNP-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 231100000987 absorbed dose Toxicity 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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Abstract
The invention discloses the radiosensitive field-effect transistors (RadFET) and preparation method thereof on a kind of silicon substrate.The isolation trench channel layer of the device is followed successively by：Silicon dioxide layer, graphene film and the silicon dioxide layer of dry process prepared by wet method.Multi-layer graphene material enhances RadFET detector sensitivities as channel layer；And loose silicon oxide layer prepared by wet method plays cushioning effect, can effectively slow down the device damage that High energy particles Radiation is brought, while avoiding graphene film and being in direct contact the interface problem brought with source-drain electrode, improve service life and the performance of device.In addition, carrying out ion implantation technology to the silica of dry process, introduce the particle trap of higher concentration, can effective adjusting device threshold voltage, while reducing source-drain contact resistance, enhance device sensitivity.The RadFET detectors are simple for process, manufacturing cost is low, are suitable for the detection of total radiation dose, are with a wide range of applications.
Description
Technical field
The invention belongs to field of manufacturing semiconductor devices, and in particular to the radiosensitive field effect transistor on a kind of silicon substrate
Manage the design and preparation method of (RadFET).
Background technology
RadFET detectors are mainly used for the measurement of space radiation accumulated dose, can be evaluated whether spacecraft electronics member device
Part, material and facility by space radiation influence degree.Since total radiation dosage is one of the factor of electronic component failure,
The monitoring of space radiation accumulated dose can design for the satellite long-life and provide engineering data.There is complicated radiation ring in space
Border includes mainly particle radiation and electromagnetic radiation.These space radiations are to aircraft material, electronic device, equipment and highflyer
Safety of member etc. constitutes serious threat, therefore develops advanced radiation detector and correlation detection technology, research space environment
Influence to spacecraft and spacefarer becomes one of the important content of aerospace engineering safety guarantee.In addition, in non-space field,
RadFET detectors are also applied to detection (such as radiating medical, radiation experiments, the integrated circuit system of various terrestrial surface radiation meterings
Make processing line and various large and medium-sized detecting devices etc.).
The operation principle of radiation detector is mainly used to based on the interaction between particle and substance to radiation and particle
Microphenomenon observed and studied.The principle of the gate oxide charge sensitive of device can be obtained according to MOSFET
RadFET detectors.In RadFET detectors, thick grating oxide layer is excited under the action of ray, is ionized, and generates electron-hole
It is right.Electronics escapes under electric field action from grid, and hole is then fixed to Oxide trapped charge, to change the threshold value electricity of MOSFET
Pressure, and by relevant reading circuit and be amplified, the absorbed dose of radiation one of obtained output voltage signal and region
It causes, radiation source is detected.
According to the difference of the substance to interact with high energy particle, common radiation detector can be divided into detection of gas
Device, scintillation detector, semiconductor detector and other detectors.In contrast, semiconductor RadFET detectors have convenient for collection
At, it is small, light-weight, low in energy consumption the advantages that, be it is a kind of preferably penetrating radiation dose detector, can be widely applied to aviation and navigate
The fields such as its detection, nuclear industry protection and medical radiation.
Currently, the exploration of preparation research and its irradiation model in relation to RadFET detectors is deepening continuously, for example aoxidize
The factors such as layer thickness, technique inject the research of detector sensitivity and adjusting thresholds the research etc. to detector performance.Stone
The excellent specific property of black alkene material makes it relatively be suitably applied RadFET detectors, and the RadFET detectors based on graphene
Correlative study is in the infancy.
Invention content
The purpose of the present invention is to provide a kind of preparation methods of radiosensitive field-effect transistor (RadFET), it is intended to carry
The performance of high RadFET detectors.
The technical scheme is that：
A kind of field-effect transistor based on graphene film material, including substrate, gate electrode, gate medium, channel layer and
Source-drain electrode.Wherein, substrate is monocrystalline silicon, forms gate electrode on substrate, and gate dielectric layer is formed on gate electrode, in gate medium
Isolation trench channel layer is formed on layer, loose silicon dioxide layer that insulated trenches layer material is prepared by wet method, semiconductor graphene film
Layer (improves sensitivity), and one layer of compact silicon dioxide layer of dry process is constituted on graphene film, at the both ends of channel layer point
Source electrode and drain electrode is not formed.
The preparation method of the radiosensitive field-effect transistor of the present invention includes the following steps：
1) layer of conductive film is grown on a silicon substrate, and chemical wet etching forms gate electrode；
2) photoetching gate dielectric layer and raceway groove layer pattern, prepared by continuous dry process grows gate dielectric layer, in isolation trench channel layer
Loose silicon dioxide layer using wet processing prepare, cover graphene film layer, one layer of dry process on graphene film
Compact silicon dioxide layer is then doped top layer silicon dioxide by ion implanting, obtains channel layer；
3) layer of conductive film is grown, chemical wet etching forms source electrode and drain electrode；
4) grow one layer of passivation dielectric layer, chemical wet etching formed gate electrode, source electrode and drain electrode fairlead；
5) one layer of metallic film is grown, chemical wet etching forms metal electrode and interconnection.
Wherein：
In step 1), gate electrode uses the conductive materials such as metallic aluminium Al or Titanium Ti；
In step 2), the material of gate dielectric layer is the insulating materials such as silica；Isolation trench channel layer silica passes through
Wet process oxidation technology obtains, and structure is more loose silicon dioxide layer.
In step 2), using the graphene film with highly conductive characteristic of semiconductor, film thickness is single layer or 2~4 layers, stone
The silicon oxide layer covered on black alkene film is obtained by dry oxidation.It selects phosphorus or boron ion to carry out ion implanting, forms N or P
The silica of type doping；
In step 3), the conductive film of source electrode and drain electrode is transparent using tin indium oxide ITO or zinc oxide aluminum AZO etc.
Conductive material.
The design parameter of radiosensitive field-effect transistor is：The breadth length ratio (W/L) of device is 300/15~700/100
(micron)；Raceway groove layer thickness at 200~800 nanometers, wherein：Loose silicon dioxide layer prepared by wet method is at 150~700 nanometers.
Beneficial effects of the present invention：
The present invention provides the designs and its preparation of the radiosensitive field-effect transistor (RadFET) on a kind of silicon substrate
Method, the channel layer using the single-layer or multi-layer grapheme material of highly conductive characteristic of semiconductor as device, enhances RadFET
Detector sensitivity, the loose silicon oxide layer under graphene film layer play cushioning effect, can effectively slow down high energy particle
The device damage that radiation zone comes, while avoiding graphene film and being in direct contact the interface problem brought with electrode, improve device
The service life of part and performance.In addition, carrying out ion implantation technology to the silica in channel layer, the impurity for introducing higher concentration is fallen into
Trap, can effective adjusting device threshold voltage, while reducing source-drain contact resistance, enhance device sensitivity.The RadFET
Detector is simple for process, manufacturing cost is low, is suitable for the detection of total radiation dose, is with a wide range of applications.
Description of the drawings
Fig. 1 is the sectional view of the radiosensitive field-effect transistor (RadFET) of the present invention；
Fig. 2 is the vertical view of the radiosensitive field-effect transistor (RadFET) of the present invention；
Fig. 3 (a)~(g) sequentially show the radiosensitive field-effect transistor (RadFET) of the present invention preparation method and
The main technological steps of the device one embodiment.Wherein, (a) is the structural schematic diagram of silicon substrate；(b) it is to form gate electrode
Processing step；(c) it is the processing step for forming gate dielectric layer and channel layer first layer；(d) it is to prepare graphene in channel layer to turn
The processing step of shifting；(e) it is the processing step of channel layer top layer silicon dioxide layer；(f) it is ion implanting to prepare channel layer
Processing step；(g) it is the processing step for forming source electrode and drain electrode.
Specific implementation mode
Below in conjunction with the accompanying drawings, by specific embodiment, the present invention is further explained.
As depicted in figs. 1 and 2, field-effect transistor of the invention includes：Substrate 1, gate electrode 2, gate dielectric layer 3, insulation
Wet oxygen silicon dioxide layer 4, graphene film 5, dry oxygen silicon dioxide layer 6 in channel layer, source-drain electrode 7.Wherein, in substrate 1
Upper formation gate electrode 2 forms gate dielectric layer 3 on gate electrode 2, isolation trench channel layer 4,5,6 is formed on gate dielectric layer 3, in ditch
Both ends in channel layer 6 are respectively formed source-drain electrode 7.
One embodiment of the field transistor preparation method of the present invention is by shown in Fig. 3 (a) to (g), including the following steps：
1) it uses monocrystalline silicon as device substrate 1, as shown in Fig. 3 (a), is grown using dc sputtering processes on substrate 1
The metal Ti of one layer of 10~150 nanometer thickness, then etches gate electrode 2, as shown in Fig. 3 (b)；
2) it uses dry method-wet oxidation to form the silicon dioxide layer of 100~500 nanometer thickness, obtains gate dielectric layer 3 and insulation
The first layer 4 of channel layer.Gate oxide and raceway groove layer pattern are obtained using photoetching process, as shown in Fig. 3 (c)；Wherein dry method is given birth to
After 50 nanometers of long silica, direct wet method grows 50~700 nanometers of silica 1.
3) by the single layer of the highly conductive semiconductor prepared or 2~4 layer graphene films be transferred to isolation trench channel layer 4 it
On, as shown in 4 in Fig. 3 (d).
4) 6 silicon dioxide growth of isolation trench channel layer is carried out, 50 nanometers of silica is grown using dry method, as 6 in Fig. 3 (e)
It is shown；
5) boron ion doping is carried out to the top layer silicon dioxide obtained by step 4) as ion implanting.Such as Fig. 3 (f) institutes
Show；
6) magnetron sputtering technique is used to grow one layer of ITO conductive film, thickness is 20~200 nanometers, photoetching, etching shape
At source electrode and drain electrode 7, as shown in Fig. 3 (g)；
7) one layer of silicon nitride passivation dielectric layer is grown according to standard technology, photoetching, etching form gate electrode, source electrode and leakage
The fairlead of electrode；
8) one layer of metal Al or transparent conductive film are grown, photoetching, etching form electrode and interconnection.
It is finally noted that the purpose for publicizing and implementing example is to help to further understand the present invention, but this field
Technical staff be appreciated that：Without departing from the spirit and scope of the invention and the appended claims, various to replace and repair
It is all possible for changing.Therefore, the present invention should not be limited to embodiment disclosure of that, and the scope of protection of present invention is to weigh
Subject to the range that sharp claim defines.
Claims (6)
1. a kind of preparation method of the field-effect transistor based on graphene film material, includes the following steps：
1) layer of conductive film is grown on a silicon substrate, and chemical wet etching forms gate electrode；
2) photoetching gate dielectric layer and raceway groove layer pattern, continuously grow gate dielectric layer, and wet processing prepares silicon dioxide layer, then covers
Lid graphene film layer, dry method grows one layer of compact silicon dioxide on graphene film, then by ion implanting to top layer
Silica is doped, and obtains channel layer；
3) layer of conductive film is grown, chemical wet etching forms source electrode and drain electrode；
4) grow one layer of passivation dielectric layer, chemical wet etching formed gate electrode, source electrode and drain electrode fairlead；
5) one layer of metallic film is grown, chemical wet etching forms metal electrode and interconnection.
2. preparation method as described in claim 1, which is characterized in that in step 1), gate electrode uses metallic aluminium Al or gold
Belong to titanium Ti.
3. preparation method as described in claim 1, which is characterized in that in step 2), gate dielectric layer is prepared by dry process
Silicon dioxide insulator material.
4. preparation method as described in claim 1, which is characterized in that in step 2), phosphorus or boron ion is selected to carry out ion
Injection forms N or the silica of p-type doping.
5. preparation method as described in claim 1, which is characterized in that in step 3), the conductive thin of source electrode and drain electrode
Film uses tin indium oxide ITO or zinc oxide aluminum AZO transparent conductive materials.
6. preparation method as described in claim 1, which is characterized in that the graphene film is single layer or 2~4 layer graphenes
Material.
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| KR101840114B1 (en) | 2016-05-30 | 2018-03-19 | 재단법인 멀티스케일 에너지시스템 연구단 | Highly sensitive sensor comprising cracked transparent conductive thin film and process for preparing same |
| CN108615786B (en) * | 2018-05-30 | 2020-01-17 | 上海大学 | Cadmium zinc telluride radiation sensitive field effect transistor and preparation method thereof |
| CN110911521B (en) * | 2019-11-22 | 2021-07-13 | 西安交通大学 | Multi-band graphene detector with multilayer coupling structure and preparation process thereof |
| CN111142146A (en) * | 2019-12-26 | 2020-05-12 | 兰州空间技术物理研究所 | Portable radiation dosimeter |
| CN113410135B (en) * | 2021-06-15 | 2023-06-30 | 西安微电子技术研究所 | Manufacturing method of anti-radiation junction field effect transistor |
| CN114864708A (en) * | 2022-05-06 | 2022-08-05 | 北京交通大学 | Multi-grid graphene field effect transistor type photoelectric sensor and preparation method thereof |
| CN115188825B (en) * | 2022-07-04 | 2024-01-30 | 弘大芯源(深圳)半导体有限公司 | Method for manufacturing radiation-resistant metal oxide semiconductor field effect device |
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| CN102157548A (en) * | 2011-02-15 | 2011-08-17 | 复旦大学 | Transistor based on graphene layer |
| CN102184858A (en) * | 2011-04-07 | 2011-09-14 | 复旦大学 | Preparation method of graphene field effect transistor |
| US9105853B2 (en) * | 2011-12-01 | 2015-08-11 | International Business Machines Corporation | N-dopant for carbon nanotubes and graphene |
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| CN102157548A (en) * | 2011-02-15 | 2011-08-17 | 复旦大学 | Transistor based on graphene layer |
| CN102184858A (en) * | 2011-04-07 | 2011-09-14 | 复旦大学 | Preparation method of graphene field effect transistor |
| US9105853B2 (en) * | 2011-12-01 | 2015-08-11 | International Business Machines Corporation | N-dopant for carbon nanotubes and graphene |
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