CN105161566B - A kind of half floating transistor gamma-rays dose detector and detection method - Google Patents
A kind of half floating transistor gamma-rays dose detector and detection method Download PDFInfo
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- CN105161566B CN105161566B CN201510381967.3A CN201510381967A CN105161566B CN 105161566 B CN105161566 B CN 105161566B CN 201510381967 A CN201510381967 A CN 201510381967A CN 105161566 B CN105161566 B CN 105161566B
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- 238000007667 floating Methods 0.000 title claims abstract description 72
- 238000001514 detection method Methods 0.000 title claims abstract description 8
- 230000004888 barrier function Effects 0.000 claims abstract description 33
- 108090000699 N-Type Calcium Channels Proteins 0.000 claims abstract description 16
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- 238000005036 potential barrier Methods 0.000 claims description 20
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- 230000008569 process Effects 0.000 claims description 8
- 108091006146 Channels Proteins 0.000 claims description 7
- 238000009825 accumulation Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 238000005265 energy consumption Methods 0.000 abstract description 5
- 230000008859 change Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 231100000987 absorbed dose Toxicity 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005251 gamma ray Effects 0.000 description 2
- 230000005524 hole trap Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000002560 therapeutic procedure Methods 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000009527 percussion Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/02—Dosimeters
- G01T1/026—Semiconductor dose-rate meters
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Abstract
The invention discloses a kind of half floating transistor gamma-rays dose detector and detection method.Embedded half FGS floating gate structure, half FGS floating gate structure directly contact with the p-type barrier layer in n-type channel in insulating barrier between the control gate of plane doping barrier transistor and raceway groove, half FGS floating gate structure mix type and p-type barrier layer to mix type identical.Detector of the present invention resets the pn-junction forward bias between floating boom and raceway groove by being biased, simple and easy to do compared to current wide variety of pmos type and FG MOS type detector.It is small volume of the present invention, high sensitivity, low in energy consumption, it is suitably applied the fields such as radiating medical.
Description
Technical field
The invention belongs to radiation dose detector field, more particularly to utilize half FGS floating gate structure, a kind of half floating boom crystal
Pipe gamma-rays dose detector and detection method.
Background technology
Gamma-rays dose detector is in numerous areas hairs such as space exploration, nuclear facilities monitoring, beta ray therapy and biomedicines
Important function is waved, type photodetector mainly has geiger's tube, thermoluminescent detector (TLD), scintillator detector and semiconductor probe
Device.With scientific and technological progress, semiconductor detector is by small volume, cost is low, high sensitivity technical advantage show it is huge
DEVELOPMENT PROSPECT and value.
Semiconductor gamma ray detector can substantially be divided into PN junction diode type and FET (field effect
Transistor, FET) two major class of type.Wherein PN junction detector is mainly used in Dose rate measurement, simple in construction, can be real-time
Output, and because the ionization energy of sensitive area material silicon is relatively low, under unit dose of radiation caused electronics sky to more, thus
Resolution ratio and sensitivity are higher, but PN junction radiation-generated current directly exports, weak output signal and be affected by temperature it is larger, to read
Go out circuit requirement height.FET detector is mainly used in measuring total absorbed dose, is existed earliest by Holmes-Siedle et al.
1970s is proposed.This kind of detector is based primarily upon P-type channel Metal-oxide-semicondutor (P-channel Metal Oxide
Semiconductor, PMOS) FET design, the capture in hole is produced to irradiation by hole trap in grid oxygen, reduces device
Part threshold voltage, so as to the change of device threshold voltage come indicate absorb dose of radiation.This kind of detector needs annealing operation
To be resetted, the process generally requires to carry out under high-temperature and high-pressure conditions, spends time length, and sensitive volume can be caused to damage
Wound.Braunig D, Knoll M in 1988 devise earliest based on floating boom FET (floating gate MOSFETs,
FG-MOS gamma ray detector), its design feature are to store caused by irradiation using the polysilicon layer wrapped up by grid oxygen
Electronics or hole, and the hole trap in oxide layer is no longer dependent on, reseting procedure passes through hot carrier in jection or Fowler-
The mode of Nordheim tunnellings pours electronics (or hole) to floating boom, more convenient with respect to pmos type detector annealing operation, but
It is the bias for still needing more than 10V.Kahilainen J et al. devised a with gas ionization chamber in 1996
Floating gate type radiation detector, direct ion storage dosage agent (direct ion storage dosimeter, DIS), this spy
Survey device by floating boom collect gas ionized in irradiation caused by ion, the monitoring to absorbed dose of radiation is realized, due to gas ionization
Can be higher, detector volume is larger, and sensitivity is not high.By the domestic and international researcher of recent decades to including pmos type and FG-
The research and optimization of MOS type FET panel detector structure, material and technical process, this kind of detector have become current master
γ and x-ray dose detector are flowed, possesses small volume, high sensitivity, advantage low in energy consumption, is widely used in radioactivity doctor
The numerous areas such as treatment, space flight.But the reseting procedure of this kind of detector still needs the high-tension annealing of high temperature, or higher electricity
The hot carrier in jection and tunnelling of pressure, power consumption is higher, spends the time longer, and can cause to damage to gate oxide.
The content of the invention
It is an object of the invention to provide one kind to have half FGS floating gate structure, and small volume is simple to operate, a kind of half floating boom crystal
Pipe gamma-rays dose detector.The purpose of the present invention also includes providing a kind of sensitivity height, a kind of low in energy consumption, half floating transistor
Gamma-rays dose detecting method.
A kind of half floating transistor gamma-rays dose detector, in the control gate and raceway groove of plane doping barrier transistor
Between insulating barrier in embedded half FGS floating gate structure, half FGS floating gate structure directly contacts with the p-type barrier layer in n-type channel, half floating boom
Structure mix type and p-type barrier layer to mix type identical.
A kind of half floating transistor gamma-rays dose detecting method, including following steps,
Step 1：Reset operation is carried out, applies positive bias in control gate, source electrode applies back bias voltage, grounded drain, promoted
Pn-junction forward bias between half FGS floating gate structure and n-type channel, initial storage in the hole on half floating boom via p-type barrier layer from
Source electrode flows out, and causes half floating gate potential to reduce, and transistor channel is completely depleted；
Step 2：Irradiation operations are carried out, spirit is incided using complete depletion of transistor channel as detection sensitive volume, ray
Quick area, caused hole are collected and stored by half floating boom via p-type barrier layer, do not apply voltage in irradiation process, on half floating boom
The accumulation in hole causes the drift of detector threshold voltage；
Step 3：The reading of detector signal is carried out, by reading the variable quantity of threshold voltage after detector predose, mark
Surely radiation agent value is absorbed.
Beneficial effect
The present invention collected using half floating boom that contact with raceway groove irradiate caused by electric charge, only need application to be not higher than during reset
2V bias makes the pn-junction forward bias between floating boom and raceway groove, and the whole process used time is no more than 1ms, and speed operates facility soon,
And sensitive volume will not be caused to damage.The detector sensitivity is high, and small volume is low in energy consumption, simple to operate, is suitably applied and puts
Penetrate therapy field.
Brief description of the drawings
Fig. 1 is traditional double grid type plane doping barrier transistor structural representation；
Fig. 2 is the structural representation of half floating gate type plane doping barrier transistor detector disclosed by the invention；
Fig. 3 is the migration in hole in detector irradiation process of the present invention and collection schematic diagram, Fig. 3 (a) are along among raceway groove
Horizontal energy band diagram, Fig. 3 (b) are along P doped layers longitudinal direction energy band diagram；
Fig. 4 is raceway groove energy band change schematic diagram after detector predose of the present invention；
Fig. 5 becomes for floating boom amount of charge stored in I-V curve change after detector predose of the present invention and signal readout
Change schematic diagram；
Fig. 6 is detector threshold voltage of the present invention with absorbed dose of radiation variation relation Linear Fit Chart.
Embodiment
The present invention is described in further details below in conjunction with accompanying drawing.
The problem of operation power consumption is high, time-consuming is resetted for traditional dose detector, proposition of the invention is a kind of to have half to float
The plane doping barrier transistor gamma-rays dose detector of grid structure.Resetting operation can be quick complete under low-voltage biasing
Into.
Technical scheme is as follows：
A kind of semiconductor gamma-rays dose detector based on half floating transistor, its structure is symmetrical above and below, including half floating
Grid and plane doping potential barrier transistor.
Half FGS floating gate structure embedded in the plane doping barrier transistor control gate and raceway groove between, and with raceway groove
P-type doping potential barrier layer directly contacts, and doping type is identical.
P-type doping potential barrier layer and its both sides n-type doped channel form detector sensitive volume, in consumption after detector reset
State to the greatest extent.
The operating method of the roentgen dose X detector is：
1) reset of detector：Apply suitable positive bias in control gate, source electrode applies back bias voltage, grounded drain, promoted
Pn-junction forward bias between half FGS floating gate structure and n-type channel, remove the hole being stored on half floating boom.Operation is resetted to complete
When, half floating gate potential reduces, and n-type channel is completely depleted.
2) irradiation produces the collection of electric charge：All electrodes ground connection of detector or floating, γ or X ray incide during being somebody's turn to do
Detector sensitive volume, electronics caused by ionization flow out under electric field action from the source electrode of detector and drain electrode, and hole is via raceway groove
ZhongpXing doping potential barriers area is moved to half FGS floating gate structure, and is ultimately stored on half floating boom.Hole accumulation causes to detect on half floating boom
Device threshold voltage shift.
3) reading of detector signal：Drained in detector and apply fixed current, read threshold value electricity after detector predose
Pressure, demarcated with detector threshold voltage variation amount and absorb dose of radiation.
The present invention will be described in detail below in conjunction with the accompanying drawings：
Half floating transistor gamma-rays dose detector of the invention, based on plane doping barrier transistor, as shown in figure 1,
Traditional double grid type plane doping barrier transistor structure is symmetrical above and below, comprising：N-type channel 1, raceway groove intermediate p-type doping potential barrier layer
2, drain region 3 and source region 4 of the raceway groove both sides for n-type heavy doping.Channel surface covers a layer insulating 5, and surface of insulating layer has control
Grid 6.The present invention introduces half floating boom 7 in said structure, and such as Fig. 2, half floating boom is embedded in the control of plane doping barrier transistor
It is local directly to be contacted with raceway groove inner p-type doping potential barrier layer in insulating barrier between grid and raceway groove, insulating barrier is divided into top layer
Insulating barrier 8 and bottom insulating barrier 9.Half floating boom doping type and concentration are identical with p-type doping potential barrier layer.
The n-type channel 1 is radiation detection sensitive volume, is synthesized using silicon, or wide-band gap material carborundum, chemical gas shallow lake method
Diamond, half floating boom 7 directly contact with p-type doping potential barrier layer 2 in raceway groove, using with the identical material of n-type channel 1.Top layer is exhausted
The charge loss that edge layer 8 and bottom insulating barrier 9 prevent from collecting in half floating boom is to control gate and n-type channel, using silica, nitrogen
SiClx, or other high dielectric constant materials.Control gate 6 uses polysilicon or metal electrode.
The concrete operation method that reset, irradiation based on the detector and signal are read is：
The reset mode of detector：Apply 1~2V positive bias in control gate, source electrode applies -0.5~-1V negative bias
Pressure, grounded drain.The now pn-junction forward bias between p-type barrier layer and n-type channel, initial storage pass through in the hole on floating boom
P-type doping potential barrier laminar flow is crossed to source electrode.Complete when resetting operation, when all electrodes are grounded, reduced because floating boom loses hole potential,
The how sub- electronics on n-type channel surface under longitudinal electric field effect towards moving among raceway groove, and in raceway groove p-type doping potential barrier presence
Transverse electric field is produced again, forces electronics to be moved to potential barrier both sides, finally whole n-type channel is completely depleted.
Irradiation produces the collection mode of electric charge：After detector resets, n-type channel and p-type doping potential barrier layer are all in consumption
State to the greatest extent.When γ or X ray are incided in detector, because incident photon energy is higher than semiconductor ionization energy, semiconductor will be made
Material ionization produces a large amount of electron hole pairs.Electron hole pair caused by most of irradiation can be compound immediately, and is produced in depletion region
Raw electron hole pair separates under electric field action, obtains irradiated electrons hole creation rate GrWith the pass between electric-field intensity E
System is as follows：
Gr=g0D·Y(E)
Wherein g0Speed, in Si materials, g are produced for electron hole in semiconductor0=4.2 × 1013rad-1cm-3, for
4H-SiC materials g0=2 × 1013rad-1cm-3.D is radiation dose rate, E0、E1It is constant with m.For Co60Gamma-rays, E1=
0.65MV/cm, m=0.9；For X ray, E1=1.35MV/cm, m=0.9.E0=Y0E1, Y at room temperature0=0.05.This literary grace
Use Co60Gamma-rays carries out simulation study to detector.
In irradiation process, device laterally can be shown with such as Fig. 3 (a) along raceway groove axis, because lightly doped n-type raceway groove embeds
Enter p-type doping potential barrier layer, can be with triangular in shape.Irradiation in n-type channel caused electronics from high to low from the leakage of potential barrier both sides
Pole and source electrode outflow, and hole then focuses on p-type doping potential barrier layer from low to high.Fig. 3 (b) is shown along p-type doping potential barrier layer
Longitudinal direction can be with distribution, it is seen that because p-type doping potential barrier layer is also at spent condition in irradiation process, compared to its electronic energy of half floating boom
Measure relatively low, potential is higher, therefore hole will be further from p-type doping potential barrier laminar flow to half floating boom, and is ultimately stored on half floating boom
On.
Store to the hole on half floating boom and raised half floating gate potential, will further reduce p-type doping potential barrier in raceway groove
The barrier height of layer.As Fig. 4 shows the change of raceway groove energy band after predose.
The playback mode of detector signal：Detector of the present invention uses fixed current method reading device threshold voltage, uses spoke
Variable quantity demarcation according to front and rear threshold voltage absorbs dose of radiation.Concrete operations are to apply suitable fixed electricity in detector drain electrode
Flow ID=1 × 10-7A, read now detector control gate voltage as threshold voltage.Fig. 5 presents detector after predose
I-V characteristic curvilinear motion figure, drift delta V occurs after threshold voltage irradiation.Fig. 5 is shown simultaneously applies control-grid voltage by low
To during High variation, the change for the hole concentration being stored on half floating boom, it is seen that hole concentration is after raceway groove fully opens
Significant change is just had, i.e., in read threshold voltages operation, the hole concentration change stored on floating boom can be ignored.
The result that detector signal reads collects as shown in fig. 6, detector threshold voltage is with absorbed dose of radiation linear change, linearly
Coefficient correlation square value (the square of correlation coefficient of linearity, R2) reach
0.99467, show that the linearity is very high；Sensitivity reaches 1.43mV/rad, in being reported with current domestic and foreign literature, is controlled in ray
Treatment field is in the horizontal MOSFET types in forward position and FG-MOS type dose detectors are suitable.
Therefore the present invention discloses a kind of half floating transistor gamma-rays dose detector.Half floating gate transistor structures are to pass
Embedded floating boom in system plane doping barrier transistor, the floating boom are contacted with p-type doping thin layer in raceway groove, exhausted for collecting raceway groove
Area caused hole in irradiation.The accumulation in hole improves floating gate potential on floating boom, controls the barrier height in raceway groove, so as to shadow
The threshold voltage of Chinese percussion instrument part.The detector resets the pn-junction forward bias between floating boom and raceway groove by being biased, phase
It is more simple and easy to do than current wide variety of pmos type and FG-MOS type detector.It is small volume of the present invention, high sensitivity, low in energy consumption,
It is suitably applied the fields such as radiating medical.
Claims (2)
- A kind of 1. half floating transistor gamma-rays dose detector, it is characterised in that：Plane doping barrier transistor includes n-type ditch Road, raceway groove intermediate p-type doping potential barrier layer, drain region and source region of the raceway groove both sides for n-type heavy doping；Channel surface covers one layer of insulation Layer, surface of insulating layer have control gate；It is embedding in insulating barrier between the control gate of plane doping barrier transistor and raceway groove Enter half FGS floating gate structure, half FGS floating gate structure directly contacts with the p-type barrier layer in n-type channel, the doping type and p of half FGS floating gate structure The doping type of type barrier layer is identical.
- 2. a kind of detection method of the half floating transistor gamma-rays dose detector based on described in claim 1, its feature exist In：Including following steps,Step 1：Reset operation is carried out, applies positive bias in control gate, source electrode applies back bias voltage, grounded drain, promotes half to float Pn-junction forward bias between grid structure and n-type channel, initial storage is in the hole on half floating boom via p-type barrier layer from source electrode Outflow, causes half floating gate potential to reduce, and transistor channel is completely depleted；Step 2：Irradiation operations are carried out, using complete depletion of transistor channel as detection sensitive volume, ray incides sensitive Area, caused hole are collected and stored by half floating boom via p-type barrier layer, do not apply voltage, half floating boom overhead in irradiation process The accumulation in cave causes the drift of detector threshold voltage；Step 3：The reading of detector signal is carried out, by reading the variable quantity of threshold voltage after detector predose, demarcation is inhaled Receive radiation agent value.
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