CN103579275A - Semi-floating gate photoreceptor manufacturing method - Google Patents
Semi-floating gate photoreceptor manufacturing method Download PDFInfo
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- CN103579275A CN103579275A CN201310548645.4A CN201310548645A CN103579275A CN 103579275 A CN103579275 A CN 103579275A CN 201310548645 A CN201310548645 A CN 201310548645A CN 103579275 A CN103579275 A CN 103579275A
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Abstract
The invention belongs to the technical field of semiconductor photoreceptors, in particular to a semi-floating gate photoreceptor manufacturing method. Through the self-aligning technology, the method can form a floating gate and a control gate of the semi-floating gate photoreceptor through one-step photoetching and is simple in technology process and easy to control. Meanwhile, according to the method, polycrystalline SiGe is used as floating gate materials of the semi-floating gate photoreceptor, the polycrystalline SiGe floating gate and a silicon substrate form a heterogeneous structure, and the value band edge of P-type polycrystalline SiGe is higher than the value band edge of p-type silicon, so that empty cavities are made to flow toward the P-type polycrystalline SiGe floating gate selectively, storage of the empty cavities in the polycrystalline SiGe floating gate is favored, and the stability of the number of the cavities in the floating gate is improved, so that output currents can be output stably.
Description
Technical field
The invention belongs to semiconductor light-sensing device technical field, be specifically related to a kind of manufacture method of half floating boom sensor devices.
Background technology
Imageing sensor is light signal to be converted to the semiconductor light-sensing device of the signal of telecommunication, and the image sensor chip being comprised of image sensor devices is widely used in the products such as digital camera, video camera and mobile phone.
A kind of semiconductor light-sensing device has been proposed in Chinese patent 200910234800.9, as shown in Figure 1, the common interior formation of trap 500 in a Semiconductor substrate or doping of semiconductor light-sensing device 10, the trap 500 of Semiconductor substrate or doping is doped with N-shaped or the p-type impurity of low concentration, and the both sides of semiconductor light-sensing device 10 are by fleet plough groove isolation structure 501 or local oxidation of silicon and isolated around.The doping type in 514He source region, drain region 511 is contrary with the doping type of Semiconductor substrate or trap 500.Within raceway groove 512 is usually located at the trap 500 of Semiconductor substrate or doping.Drain region 514 can be connected with outer electrode by contact 513 as the drain electrode of a MOSFET.Source region 511 can be connected with outer electrode by contact 510 as the source electrode of a MOSFET.Between channel region 512 and fleet plough groove isolation structure 501, be well region 503, its doping type is conventionally identical with 511He drain region 514, source region.Contra-doping district 502 is positioned at well region 503, has the doping type contrary with well region 503, thereby has formed a p-n junction diode.On channel region 512, form the ground floor dielectric film 506 that covers whole channel region.The floating gate region with conductivity 505 as charge-storage node forming on this ground floor dielectric film.Floating gate region 505 can be used as the floating grid of a MOSFET, by it being applied to the voltage of different sizes, can control the current density that flows through raceway groove 512.Floating gate region 505 is conventionally contrary with the doping attribute in drain region 514, and for example, the polysilicon being adulterated by p-type in floating gate region 505 forms, and drain region 514 is mixed with N-shaped impurity.Floating gate region 505 contacts by the window 504Yu contra-doping district 502 in dielectric film 506.Therefore 505Ye Yuyou contra-doping district 502, floating gate region is connected with the p-n junction that well region 503 forms.Second layer insulation film 509 covers on floating gate region 505, and on second layer dielectric film 509 formation control grid 507 and side wall 508.
The manufacture method of above-mentioned semiconductor light-sensing device 10 has also been proposed in Chinese patent 200910234800.9, wherein, the forming process of floating gate region 505 and control grid 507 is: first, deposit ground floor conductive film, then by ground floor conductive film described in photoetching process etching, form floating gate region 505, as shown in Figure 2 a; Then, cover floating gate region 505 and form second layer insulation films 509, deposit second layer conductive film on second layer insulation 509 then, then by second layer conductive film formation control grid 507 described in photoetching process and etching technics etching, as shown in Figure 2 b.As mentioned above, in the forming process of floating gate region and control grid, need to carry out Twi-lithography technique, not only process is complicated, also can easily introduce deviation of the alignment.Simultaneously, floating gate region 505 adopts polysilicon, tungsten, titanium nitride and metal material conventionally, there between polysilicon and the silicon substrate contacting with it, do not have to be with to be poor, be unfavorable for hole flowing from silicon to polysilicon, collection efficiency is not high, and this semiconductor light-sensing device 10 can be to applying positive voltage at control grid 507 in reading current, this positive voltage can be offset the positive voltage being added in drain electrode, and this also can cause 505Zhong hole, floating gate region flowing to contra-doping district 502.
Summary of the invention
In view of the defect that above-mentioned prior art exists, the object of the invention is to propose the manufacture method of half floating boom sensor devices, to simplify the manufacturing process of half floating boom sensor devices, and improve the collection efficiency of hole in the floating boom of half floating boom sensor devices.
Object of the present invention will be achieved by the following technical programs:
The manufacture method of half floating boom sensor devices, comprises the formation method of floating boom and control gate, and the formation method of described floating boom and control gate comprises the following steps:
Cover formed structure deposit ground floor conductive film;
On described ground floor conductive film, form second layer insulation film;
Deposit second layer conductive film on described second layer insulation film;
By second layer conductive film described in photoetching process and etching technics etching, after etching, remaining described second layer conductive film forms the control gate of device;
Dual-side edge along described control gate, continue to etch away the described second layer insulation film and the described ground floor conductive film that expose, after etching, remaining described ground floor conductive film forms the floating boom of device, described floating boom is connected with the dopant well described in part with the first doping type, and the dopant well described in another part with the first doping type is come out.
Preferably, the manufacture method of half above-mentioned floating boom sensor devices, wherein: further comprising the steps of before the formation method of described floating boom and control gate:
In the Semiconductor substrate with the first doping type, form fleet plough groove isolation structure or silicon local oxidation structure;
In described Semiconductor substrate, form the dopant well with the second doping type;
Surface in described Semiconductor substrate forms ground floor insulation film, then by photoetching process, forms figure;
The described ground floor insulation film that the photoresist of take falls to expose as mask etching;
The remaining described ground floor insulation film after etching of take is mask, carry out Implantation, in the described dopant well with the second doping type, form the dopant well with the first doping type, described in there is the first doping type dopant well with described in there is the second doping type dopant well be formed for producing photoelectric pn junction diode.
Preferably, the manufacture method of half described floating boom sensor devices, wherein: further comprising the steps of after the formation method of described floating boom and control gate:
Both sides at described control gate form grid curb wall;
Along described grid curb wall, etch away the described ground floor insulation film exposing;
Carry out Implantation, in described Semiconductor substrate, doping is leaked in formation source;
Carry out electrode isolation and electrode and form, and form optical channel, make optical energy irradiation to described for generation of on photoelectric pn junction diode.
Preferably, the manufacture method of half above-mentioned floating boom sensor devices, wherein: described ground floor conductive film is any one in polycrystalline germanium SiClx, polysilicon, tungsten, titanium nitride or alloy material.
Preferably, the manufacture method of half above-mentioned floating boom sensor devices, wherein: described second layer conductive film is any one in polysilicon, metal or the lamination between them adulterating.
Preferably, the manufacture method of half above-mentioned floating boom sensor devices, wherein: described Semiconductor substrate is any one in silicon, SiGe or the GaAs on silicon, insulator.
Preferably, the manufacture method of half above-mentioned floating boom sensor devices, wherein: described the first doping type is N-shaped, described the second doping type is p-type; Or described the first doping type is p-type, described the second doping type is N-shaped.
Preferably, the manufacture method of half above-mentioned floating boom sensor devices, wherein: described ground floor insulation film, second layer insulation film be silicon dioxide, silicon nitride, silicon oxynitride, have any one in the insulating material of high-k or the lamination between them
Outstanding effect of the present invention is:
(1) manufacture method of half floating boom sensor devices of the present invention, forms device control gate and floating boom by self-registered technology, and only need to carry out a step photoetching process just can form floating boom and control gate, and technical process is simple, is easy to control.
(2) the present invention proposes to adopt polycrystalline germanium SiClx to be used as the floating boom material of half floating boom sensor devices, polycrystalline germanium SiClx floating boom and silicon substrate form heterojunction structure, the top of valence band of p-type polycrystalline germanium SiClx is higher than the top of valence band of p-type silicon, can make hole selectively flow to p-type polycrystalline germanium SiClx floating boom, be conducive to the preservation of hole in polycrystalline germanium SiClx floating boom, improve the stability of hole number in floating boom, and then stabilizing output current.
Accompanying drawing explanation
Fig. 1 be a kind of semiconductor light-sensing device of proposing in Chinese patent 200910234800.9 profile.
Fig. 2 is the floating boom of semiconductor light-sensing device and the manufacture method process schematic diagram of control gate proposing in Chinese patent 200910234800.9.
Fig. 3 to Figure 10 is the process chart that the present invention manufactures an embodiment of half floating boom sensor devices.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is further detailed explanation.In the drawings, for convenience of description, amplified the thickness in layer and region, shown in size do not represent actual size.Reference diagram is the schematic diagram of idealized embodiment of the present invention, and embodiment shown in the present should not be considered to only limit to the given shape in region shown in figure, but comprises resulting shape, the deviation causing such as manufacture.The curve that for example etching obtains has crooked or mellow and full feature conventionally, but in an embodiment of the present invention, all with rectangle, represents, the expression in figure is schematically, but this should not be considered to limit the scope of the invention.In the following description, the term substrate of using can be understood as and comprises the just semiconductor wafer in processes, may comprise other prepared thin layer thereon simultaneously.
First, as shown in Figure 3, in the interior formation fleet plough groove isolation structure of the Semiconductor substrate with the first doping type 200 providing or silicon local oxidation structure 300, this isolation technology is that industry is known.Semiconductor substrate 200 can silicon, any one in silicon, SiGe or GaAs on insulator.Described the first doping type is n, or is p-type.
Next, superficial growth one deck insulation film 201 in Semiconductor substrate 200, such as being silica or silicon nitride, then by photoetching process, form figure, then take photoresist as the described insulation film 201 that mask etching falls to expose, stop at the table of Semiconductor substrate 200 not, the remaining insulation film 201 after etching of then take is mask, the dopant well 202 in the interior formation of Semiconductor substrate 200 with the second doping type, as shown in Figure 4.Corresponding with described the first doping type, described the second doping type is p-type, or is N-shaped.
Next, surface in Semiconductor substrate 200 forms ground floor insulation film 203, then deposit one deck photoresist 301 form figure by photoetching process on ground floor insulation film 203, then the ground floor insulation film 203 that the photoresist 301 of take falls to expose as mask etching, in ground floor insulation film 203, form an opening 401, and then expose the dopant well 202 described in part with the second doping type, as shown in Figure 5.Ground floor insulation film 203 can be for silicon dioxide, silicon nitride, silicon oxynitride, have any one in the insulating material of high-k or the lamination between them.
Divest after photoresist 301, the remaining ground floor insulation film 203 after etching of take is mask, carry out Implantation, the dopant well 204 in the interior formation of dopant well 202 with the second doping type with the first doping type, the dopant well 204 with the first doping type can form one for generation of photoelectric pn junction diode, as shown in Figure 6 with the dopant well 202 with the second doping type.
Next, cover formed structure deposit ground floor conductive film 205, as shown in Figure 7.Then, continue to form second layer insulation film 206 on ground floor conductive film 205, deposit second layer conductive film 207 on second layer insulation film 206 then, then defines the position of the control gate of device by photoetching process.Then the second layer conductive film 207 that the photoresist 302 of take falls to expose as mask etching, after etching, remaining second layer conductive film 207 forms the control gate 207 of device, as shown in Figure 8.Second layer insulation film 206 can be for silicon dioxide, silicon nitride, silicon oxynitride, have any one in the insulating material of high-k or the lamination between them.Ground floor conductive film 205 is any one in polycrystalline germanium SiClx, polysilicon, tungsten, titanium nitride or alloy material.Second layer conductive film 207 is any one in polysilicon, metal or the lamination between them adulterating.
Next, dual-side edge along control gate 207, continue to etch away the second layer insulation film 206 and the ground floor conductive film 205 that expose, after etching, remaining ground floor conductive film 205 forms the floating boom 205 of device, floating boom 205 is connected with the dopant well 204 that part has the first doping type, the dopant well 204 another part to the first doping type comes out, and divests after photoresist 302 as shown in Figure 9.
As mentioned above, just can form control gate and the floating boom of device through photoetching process, technical process is simple.And, when adopting silicon materials as semiconductor substrate materials, and while adopting germanium material as floating boom material, polycrystalline germanium SiClx floating boom and silicon substrate form heterojunction structure, the top of valence band of p-type polycrystalline germanium SiClx, higher than the top of valence band of p-type silicon, can make hole selectively flow to p-type polycrystalline germanium SiClx, is conducive to the preservation of hole in polycrystalline germanium SiClx floating boom, improve the stability of hole number in floating boom, and then can stabilizing output current.
Finally, both sides at control gate 207 form grid curb wall 208, then along grid curb wall 203, etch away the ground floor insulation film 203 exposing, then by ion implantation technology, in Semiconductor substrate 200, carry out source and leak doping, form 209He drain region, source region 210, then carry out conventional semiconductor postchannel process, form source electrode 211 and drain electrode 212, and form optical channel, make optical energy irradiation to described for generation of on photoelectric pn junction diode, as shown in figure 10.
The present invention still has numerous embodiments, and all employing equivalents or equivalent transformation and all technical schemes of forming, within all dropping on protection scope of the present invention.
Claims (8)
1. the manufacture method of half floating boom sensor devices, comprises and it is characterized in that the formation method of floating boom and control gate, and the formation method of described floating boom and control gate comprises the following steps:
Cover formed structure, deposit ground floor conductive film;
On described ground floor conductive film, form second layer insulation film;
Deposit second layer conductive film on described second layer insulation film;
By second layer conductive film described in photoetching process and etching technics etching, after etching, remaining described second layer conductive film forms the control gate of device;
Dual-side edge along described control gate, continue to etch away the described second layer insulation film and the described ground floor conductive film that expose, after etching, remaining described ground floor conductive film forms the floating boom of device, described floating boom is connected with the dopant well that part has the first doping type, and dopant well another part to the first doping type comes out.
2. the manufacture method of half floating boom sensor devices according to claim 1, is characterized in that: further comprising the steps of before the formation method of described floating boom and control gate:
In the Semiconductor substrate with the first doping type, form fleet plough groove isolation structure or silicon local oxidation structure;
In described Semiconductor substrate, form the dopant well with the second doping type;
Surface in described Semiconductor substrate forms ground floor insulation film, then by photoetching process, forms figure;
The described ground floor insulation film that the photoresist of take falls to expose as mask etching;
The remaining described ground floor insulation film after etching of take is mask, carry out Implantation, in the described dopant well with the second doping type, form the dopant well with the first doping type, described in there is the first doping type dopant well with described in there is the second doping type dopant well be formed for producing photoelectric pn junction diode.
3. the manufacture method of half floating boom sensor devices according to claim 1, is characterized in that: further comprising the steps of after the formation method of described floating boom and control gate:
Both sides at described control gate form grid curb wall;
Along described grid curb wall, etch away the described ground floor insulation film exposing;
Carry out Implantation, in described Semiconductor substrate, doping is leaked in formation source;
Carry out electrode isolation and electrode and form, and form optical channel, make optical energy irradiation to described for generation of on photoelectric pn junction diode.
4. the manufacture method of half floating boom sensor devices according to claim 1, is characterized in that: described ground floor conductive film material is any one in polycrystalline germanium SiClx, polysilicon, tungsten, titanium nitride or alloy material.
5. the manufacture method of half floating boom sensor devices according to claim 1, is characterized in that: described second layer conductive film is any one in polysilicon, metal or the lamination between them adulterating.
6. according to the manufacture method of any one the half floating boom sensor devices described in claim 1 ~ 3, it is characterized in that: described Semiconductor substrate is any one in silicon, SiGe or the GaAs on silicon, insulator.
7. according to the manufacture method of any one the half floating boom sensor devices described in claim 1 ~ 2, it is characterized in that: described the first doping type is N-shaped, described the second doping type is p-type; Or described the first doping type is p-type, described the second doping type is N-shaped.
8. according to the manufacture method of any one the half floating boom sensor devices described in claim 1 ~ 3, it is characterized in that: described ground floor insulation film, second layer insulation film be silicon dioxide, silicon nitride, silicon oxynitride, have any one in the insulating material of high-k or the lamination between them.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104183651A (en) * | 2014-08-17 | 2014-12-03 | 复旦大学 | Gallium nitride semi-floating-gate power component and manufacturing method thereof |
| CN105161566A (en) * | 2015-07-02 | 2015-12-16 | 哈尔滨工程大学 | Semi-floating-gate transistor gamma-ray dose detector and detection method |
| CN109001900A (en) * | 2018-09-05 | 2018-12-14 | 南京大学 | A kind of micro imaging system and method for light field and fluorescent dual module state |
| CN109698242A (en) * | 2018-12-17 | 2019-04-30 | 复旦大学 | A kind of half floating transistor and preparation method thereof with high tunneling efficiency |
| CN109742159A (en) * | 2018-12-17 | 2019-05-10 | 复旦大学 | Half floating transistor of a kind of low tunnelling electric leakage and preparation method thereof |
| CN109742073A (en) * | 2018-12-17 | 2019-05-10 | 复旦大学 | A kind of half floating transistor and preparation method thereof with high charge holding capacity |
| CN110391258A (en) * | 2019-07-18 | 2019-10-29 | 复旦大学 | A kind of half floating gate imaging sensor of buried layer light sensitive diode and preparation method thereof |
| CN110391259A (en) * | 2019-07-18 | 2019-10-29 | 复旦大学 | Half floating gate imaging sensor of back-illuminated type and preparation method thereof |
| CN110416086A (en) * | 2019-07-10 | 2019-11-05 | 复旦大学 | A kind of half floating transistor of FD-SOI structure and preparation method thereof |
| WO2021155559A1 (en) * | 2020-02-07 | 2021-08-12 | Huawei Technologies Co., Ltd. | Light sensor device, method for fabricating light sensor device |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104183651A (en) * | 2014-08-17 | 2014-12-03 | 复旦大学 | Gallium nitride semi-floating-gate power component and manufacturing method thereof |
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| CN109742159A (en) * | 2018-12-17 | 2019-05-10 | 复旦大学 | Half floating transistor of a kind of low tunnelling electric leakage and preparation method thereof |
| CN109742073A (en) * | 2018-12-17 | 2019-05-10 | 复旦大学 | A kind of half floating transistor and preparation method thereof with high charge holding capacity |
| CN110416086A (en) * | 2019-07-10 | 2019-11-05 | 复旦大学 | A kind of half floating transistor of FD-SOI structure and preparation method thereof |
| CN110391258A (en) * | 2019-07-18 | 2019-10-29 | 复旦大学 | A kind of half floating gate imaging sensor of buried layer light sensitive diode and preparation method thereof |
| CN110391259A (en) * | 2019-07-18 | 2019-10-29 | 复旦大学 | Half floating gate imaging sensor of back-illuminated type and preparation method thereof |
| WO2021155559A1 (en) * | 2020-02-07 | 2021-08-12 | Huawei Technologies Co., Ltd. | Light sensor device, method for fabricating light sensor device |
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Application publication date: 20140212 |