CN104576665B - U-shaped channel semiconductor sensor devices and its manufacture method - Google Patents
U-shaped channel semiconductor sensor devices and its manufacture method Download PDFInfo
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- CN104576665B CN104576665B CN201310513086.3A CN201310513086A CN104576665B CN 104576665 B CN104576665 B CN 104576665B CN 201310513086 A CN201310513086 A CN 201310513086A CN 104576665 B CN104576665 B CN 104576665B
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Abstract
Present invention is disclosed a kind of U-shaped channel semiconductor sensor devices and its manufacture method, it is included in a U-shaped channel MOS transistor, a photosensitive pn-junction diode and the pinned diode formed in Semiconductor substrate, the floating boom of U-shaped channel MOS transistor is connected with one end of photosensitive pn-junction diode by a floating boom opening and is connected with one end of pinned diode, and the drain region of U-shaped channel MOS transistor is connected with the other end of photosensitive pn-junction diode and is connected with the other end of pinned diode.The U-shaped channel semiconductor sensor devices of the present invention have the advantages that cellar area is small, chip density is high, sensitivity is high, add the resolution ratio of image sensor chip.
Description
Technical field
The invention belongs to technical field of semiconductor device, more particularly to a kind of U-shaped channel semiconductor sensor devices and its system
Make method.
Background technology
Imaging sensor is the semiconductor light-sensing device for converting optical signals to electric signal, by image sensor devices
The image sensor chip of composition is widely used in the media products such as digital camera, video camera and mobile phone.
A kind of semiconductor light-sensing device of planar channeling is proposed in Chinese patent 200910234800.9, as shown in figure 1,
It is the profile along the device channel length direction.Semiconductor light-sensing device 10 is generally in a Semiconductor substrate or doping
Formed in trap 500, the trap 500 of Semiconductor substrate or doping is doped with the n-type or n-type impurity of low concentration, semiconductor light-sensing device
Both sides pass through shallow isolating trough（STI）501 or local oxidation of silicon（LOCOS）With around isolating.Drain region 514 and source region 511
Doping type it is opposite with the doping type of Semiconductor substrate or the trap of doping 500.Raceway groove 512 be usually located at Semiconductor substrate or
Within the trap 500 of doping.Drain region 514 can be connected as the drain electrode of a MOS transistor by contact 513 and outer electrode
Connect.Source region 511 can be connected as the source electrode of a MOS transistor by contact 510 with outer electrode.
In raceway groove 512 and shallow isolating trough（STI）Between 501 be well region 503, its doping type generally with source region and drain region phase
Together.Contra-doping area 502 is located in well region 503, with the doping type opposite with well region 503, so as to form a photosensitive pn
Junction diode.The first layer dielectric film 506 for covering whole raceway groove 512 is formed with raceway groove 512.In first layer dielectric film 506
On a conductive floating boom 505 as charge-storage node being formed.Floating boom 505 can be used as a MOS crystalline substance
The floating grid of body pipe, by applying different size of voltage to it, can control to flow through the current density of raceway groove 512.Floating boom
505 generally with the doping attribute in drain region 514 on the contrary, for example, the polysilicon that floating boom 505 is adulterated by p-type is formed, and drain region 514 is then
Mixed with p-type impurity.Floating gate region 505 is in contact by the window 504 in dielectric film 506 with contra-doping area 502.Therefore floating boom 505
Also it is connected with the pn-junction formed by contra-doping area 502 and well region 503.Second layer insulation film 509 is covered on floating boom 505, and
Control gate 507 and side wall 508 are formed on second layer dielectric film 509.
To ensure the performance of semiconductor light-sensing device, the semiconductor light-sensing device of planar channeling needs longer raceway groove long
Degree, this make it that the cellar area of semiconductor light-sensing device is larger, so as to reduce chip density, is unfavorable for chip to miniaturization
Direction is developed, meanwhile, the photosensitive pn-junction two of the semiconductor light-sensing device of the planar channeling in Chinese patent 200910234800.9
The photo-absorption region of pole pipe is located at the surface of Semiconductor substrate, easily disturbed.
The content of the invention
In view of the defect that above-mentioned prior art is present, it is an object of the invention to propose that a kind of U-shaped channel semiconductor is photosensitive
Device and its manufacture method, so as to reduce the cellar area of semiconductor light-sensing device, improve chip density.
The purpose of the present invention will be achieved by the following technical programs：
A kind of U-shaped channel semiconductor sensor devices, including：
One Semiconductor substrate with the first doping type；
The U-shaped channel MOS transistor formed in the Semiconductor substrate and a photosensitive pn-junction diode；
The U-shaped channel MOS transistor is included in second doping type of having formed in the Semiconductor substrate
Source region and drain region, the U-shaped formed in the Semiconductor substrate and between the source region and the drain region that is recessed are recessed
Groove, covers the first layer gate dielectric layer that the surface of the U-shaped groove is formed, one formed on the first layer gate dielectric layer
The individual floating boom with the first doping type, the control gate formed on the floating boom, the control gate is floated with described
Grid are isolated by second layer gate dielectric layer；
One end of the photosensitive pn-junction diode is connected with the drain region with identical doping polarity, the photosensitive pn-junction
The other end of diode is connected by a floating boom opening with the floating boom with identical doping polarity.
It is preferred that, above-mentioned U-shaped channel semiconductor sensor devices, wherein：Also include a pinned diode, the pinning
One end of diode is connected with the drain region with identical doping polarity, and the other end of the pinned diode passes through described float
Grid opening and the floating boom with identical doping polarity.
It is preferred that, above-mentioned U-shaped channel semiconductor sensor devices, wherein：The floating boom opening is leaned on positioned at the U-shaped groove
The top side wall of the nearly drain region side, or the floating boom opening are located at the Semiconductor substrate close to the drain region side
Upper surface on, or the floating boom opening be located at the U-shaped groove close to the drain region side top side wall with it is close
Between the upper surface of the Semiconductor substrate of the drain region side.
It is preferred that, above-mentioned U-shaped channel semiconductor sensor devices, wherein：The control gate is located at the floating boom top
On, or the control gate be located at the floating boom at the top of on and to source region side extend cause the control gate in source region
Side surrounds the floating boom.
It is preferred that, above-mentioned U-shaped channel semiconductor sensor devices, wherein：The first described doping type is n-type, described
Second of doping type is p-type；Or, the first described doping type is p-type, and second of doping type is n-type.
A kind of manufacture method of U-shaped channel semiconductor sensor devices, including：
The second doped region with second of doping type is formed in the Semiconductor substrate with the first doping type；
The first doped region with the first doping type is formed in second doped region；
U-shaped groove of the depression in Semiconductor substrate is formed, the U-shaped groove causes first doped region is only located to lean on
In second doped region of nearly drain region side；
First layer insulation film is formed on the surface of the U-shaped groove and the surface of the Semiconductor substrate；
The first layer insulation film is etched, an opening is formed in the first layer insulation film, the opening will
The first doped region part is exposed；
The formed structure deposit first layer conductive film of covering；
Second layer insulation film is deposited on the first layer conductive film；
Second layer conductive film is deposited on the second layer insulation film；
The second layer conductive film, the second layer insulation film and the first layer conductive film are sequentially etched, is carved
Remaining first layer conductive film forms floating boom, institute after the remaining second layer conductive film formation control gate, etching after erosion
Floating boom is stated to be connected with first doped region by the opening or the part opening；
Source region and drain region are formed in the both sides of the control gate, the Semiconductor substrate.
It is preferred that, the manufacture method of above-mentioned U-shaped channel semiconductor sensor devices, wherein：Forming the source region and institute
State also includes behind drain region：The 3rd doped region with second of doping type one layer thin is formed in first doped region,
3rd doped region is connected with the drain region.
It is preferred that, the manufacture method of above-mentioned U-shaped channel semiconductor sensor devices, wherein：The first described doping type
For n-type, second of doping type is p-type；Or, the first described doping type is p-type, second of doping type
For n-type.
It is preferred that, the manufacture method of above-mentioned U-shaped channel semiconductor sensor devices, wherein：The first layer insulation film
With the second layer insulation film be respectively silica, silicon nitride, silicon oxynitride, high dielectric constant insulating material or they
Between lamination in any one, the first layer conductive film be polycrystalline SiGe, polysilicon, tungsten, titanium nitride or conjunction
Any one in golden material, the second layer conductive film is the polysilicon of doping, in metal or lamination between them
Any one.
It is preferred that, the manufacture method of above-mentioned U-shaped channel semiconductor sensor devices, wherein：Led forming the first layer
After conductive film, first the first layer conductive film is performed etching to form floating boom, then the insulation of the deposit second layer is thin successively again
Film and second layer conductive film.
The present invention protrusion effect be：
The U-shaped channel semiconductor sensor devices of the present invention use U-shaped channel structure, shorten channel length, nail therein
Pricking diode deeper can be advanced to the photo-absorption region of photosensitive pn-junction diode inside Semiconductor substrate, remote to be disturbed
Surface.Compared with the semiconductor light-sensing device of planar channeling, the semiconductor light-sensing device of U-shaped channel structure of the invention has
Have the advantages that cellar area is small, chip density is high, sensitivity is high, add the resolution ratio of image sensor chip.
Just accompanying drawing in conjunction with the embodiments below, the embodiment to the present invention is described in further detail, so that of the invention
Technical scheme is more readily understood, grasped.
Brief description of the drawings
Fig. 1 is a kind of profile of the semiconductor light-sensing device of planar channeling of the prior art；
Fig. 2 is the profile of one embodiment of the U-shaped channel semiconductor sensor devices of the present invention；
Fig. 3 is the profile of second embodiment of the U-shaped channel semiconductor sensor devices of the present invention；
Fig. 4 is the profile of the 3rd embodiment of the U-shaped channel semiconductor sensor devices of the present invention；
Fig. 5 is the profile of the 4th embodiment of the U-shaped channel semiconductor sensor devices of the present invention；
Fig. 6 is the profile of the 5th embodiment of the U-shaped channel semiconductor sensor devices of the present invention；
Fig. 7 is the profile of the 6th embodiment of the U-shaped channel semiconductor sensor devices of the present invention；
Fig. 8 to Figure 13 is the technique of one embodiment of the manufacture method of the U-shaped channel semiconductor sensor devices of the present invention
Flow chart.
Embodiment
The present invention is further detailed explanation with embodiment below in conjunction with the accompanying drawings.In figure, for convenience
Illustrate, be exaggerated layer and the thickness in region, shown size does not represent actual size.Implement with reference to the idealization that figure is the present invention
The schematic diagram of example, the embodiment shown in the present invention should not be considered limited to the given shape in region shown in figure, but wrap
Resulting shape is included, such as manufactures caused deviation.The characteristics of obtained curve generally has bending or be mellow and full is for example etched,
But in an embodiment of the present invention, represented with rectangle, the expression in figure is schematical, but this should not be construed as limiting
The scope of the present invention.In the following description, used term substrate can be understood as including just in technique processing simultaneously
Semiconductor wafer, may be included in other film layers prepared thereon.
Fig. 2 to Fig. 7 is six embodiments of U-shaped channel semiconductor sensor devices proposed by the invention, and they are along device
The profile of part orientation.
As shown in Fig. 2 the U-shaped channel semiconductor sensor devices of one embodiment of the present invention include a U-shaped raceway groove
MOS transistor and a photosensitive pn-junction diode.U-shaped channel MOS transistor is included in partly leading with the first doping type
The source region of body substrate 200 and the highly doped ion concentration with second of doping type formed in Semiconductor substrate 200
211 and drain region 212.Source region 211 and drain region 212 are respectively formed in the low-doped doped region 201 of ion concentration the 4th and the 5th doping
Area 202.U-shaped channel MOS transistor is additionally included in what is formed in Semiconductor substrate 200 and between source region 211 and drain region 212
U-shaped groove, the part of Semiconductor substrate 200 between the 4th doped region 201 and the 5th doped region 202 forms the U-shaped of device
Channel region.Cover the first layer gate dielectric layer 206 that the surface of above-mentioned U-shaped groove is formed, the shape on first layer gate dielectric layer 206
Into one have the first doping type floating boom 207, the control gate 209 formed on floating boom 207, control gate
209 are isolated with floating boom 207 by second layer gate dielectric layer 208.
One formed in the 5th doped region 202 has the first doped region 203 of the first doping type, the first doping
Area and 203 and the 5th doped region 202 doping type on the contrary, can be formed between the first doped region 203 and the 5th doped region 202
One is used for photosensitive photosensitive pn-junction diode.And then, photosensitive pn-junction diode one end（5th doped region 202）Doping polarity
It is identical with the doping polarity in drain region 212 and be connected with drain region 212.Meanwhile, the photosensitive pn-junction diode other end（First doped region
203）Doping polarity and floating boom 207 doping polarity it is identical and be connected by a floating boom opening 402 with floating boom 207.
As described above, Semiconductor substrate 200 can be silicon, the silicon on insulator, SiGe or be GaAs.The first
Doping type is n-type, and second of doping type is p-type, or, the first doping type is p-type, and second of doping type is n
Type.It can be silica, silicon nitride, silicon oxynitride, height that first layer gate dielectric layer 206 and second layer gate dielectric layer 208, which are distinguished,
Any one in permittivity dielectric material or lamination between them, its physical thickness range is preferably 1 nanometer -20 and received
Rice.Floating boom 207 can be any one in polycrystalline germanium SiClx, polysilicon, tungsten, titanium nitride or alloy material, control gate 209
Can be any one in the polysilicon, metal or lamination between them of doping.
When illumination is mapped on the photosensitive pn junction diodes of the U-shaped channel semiconductor sensor devices of the present invention, photosensitive pn-junction
Photogenerated current can be produced in diode and floating boom 207 is charged, changes the potential of floating boom 207, therefore floating boom 207 with this
Potential it is relevant with the intensity of the photosensitive pn-junction diode of light irradiation and time, this causes the threshold of U-shaped channel semiconductor sensor devices
Threshold voltage changes.
The U-shaped channel semiconductor sensor devices of second embodiment of the present invention, can also include a pinned diode,
As shown in figure 3, being formed with the 3rd doped region with second of doping type one layer thin at the top of the first doped region 203
800, the doping of the first doped region 203 and the 3rd doped region 800 on the contrary, can the first doped region 203 and the 3rd doped region 800 it
Between formed a pinned diode.Therefore, pinned diode one end（3rd doped region 800）Doping polarity and drain region 212
Doping polarity is identical and is connected with drain region 212, the pinned diode other end（First doped region 203）Doping polarity and floating boom
207 doping polarity is identical and is connected by floating boom opening 402 with floating boom 207.
The U-shaped channel semiconductor sensor devices of the 3rd embodiment of the present invention, the control gate on floating boom 207
208 can extend the side encirclement floating boom 207 for causing control gate 209 in source region 211 to the side of source region 211, can so increase
Plus capacitive coupling rate, as shown in Figure 4.
The floating boom opening 402 of the U-shaped channel semiconductor sensor devices of one embodiment of the invention shown in Fig. 2 is located at
On the upper surface of the Semiconductor substrate 200 of the side of drain region 212, meanwhile, the U-shaped raceway groove of the 4th embodiment of the invention
The floating boom opening 402 of semiconductor light-sensing device may be located on top side wall and close leakage of the U-shaped groove close to the side of drain region 212
Between the upper surface of the Semiconductor substrate 200 of the side of area 212, as shown in Figure 5.The U-shaped raceway groove of the 5th embodiment of the present invention
The floating boom opening 402 of semiconductor light-sensing device may be located on top side wall of the U-shaped groove close to the side of drain region 212, such as Fig. 6 institutes
Show.
Fig. 7 for the 6th embodiment of the present invention U-shaped channel semiconductor sensor devices, it is and of the invention shown in Fig. 3
The U-shaped channel semiconductor sensor devices of second embodiment compare, in the embodiment：The 4th doped region 201 is not formed, because
This, the part of Semiconductor substrate 200 between the doped region 202 of source region 211 and the 5th forms U-shaped channel region.
U-shaped channel semiconductor sensor devices proposed by the invention can be manufactured by many methods, described below
It is the technological process of one embodiment of manufacture U-shaped channel semiconductor sensor devices proposed by the invention.
First, as shown in figure 8, passing through shallow trench in the Semiconductor substrate 200 with the first doping type of offer
Isolation（STI）Process formation active area（Not shown in figure）, this STI techniques are known to industry.Then noted by ion
Enter technique and the second doped region 300 with second of doping type is formed in the Semiconductor substrate 200, then again by passing through
Ion implantation technology forms the first doped region 203 with the first doping type in the second doped region 300.Semiconductor substrate
200 can be silicon, the silicon on insulator, SiGe or be GaAs.The first doping type be p-type, mix for second
Miscellany type be n-type, or the first doping type be n-type, second of doping type be p-type.
Next, in one layer of hard mask layer of surface deposition of Semiconductor substrate 200, hard mask layer can for silica or
Silicon nitride, or the lamination of silica and silicon nitride.Then one layer of photoresist and mask, exposure are deposited on hard mask layer
Light, development define the position of U-shaped groove, then etch away exposed hard mask layer, divest after photoresist using hard mask layer as
The Semiconductor substrate 200 that the method etching that mask is combined by wet etching and dry etching exposes, so as to form depression
In the U-shaped groove of Semiconductor substrate 200.Second doped region 300 is isolated into the 4th doped region 201 and the 5th and mixed by the U-shaped groove
Miscellaneous area 202, and the first doped region 203 is located in the 5th doped region 202 of drain region side, etch away remaining hard
After mask layer as illustrated in fig. 9.Therefore the doping type of first doped region 203 and the 5th doped region 202 first on the contrary, can mix
One is formed between the miscellaneous doped region 202 of area 203 and the 5th is used for photosensitive photosensitive pn-junction diode.By controlling in the first step
Ion implantation technology or the position for controlling U-shaped groove, can only form the 5th doped region 202 after U-shaped groove is formed, and
The 4th doped region 201 is not formed, as shown in figure 9b.
Next, in the surface of U-shaped groove and the superficial growth first layer insulation film of Semiconductor substrate 200, first
Layer insulation film can be silica, silicon nitride, silicon oxynitride or be the high-ks such as hafnium oxide insulating materials, its
Physical thickness is preferably 1 nanometer -20 nanometers.Next, by photoetching process and etching technics in first layer insulation film 206
An opening 4002 is formed, opening 4002 is located on the upper surface of the 5th doped region 202, as shown in Figure 10 a.Opening 4002
Position can also be located between the top side wall of close device drain region side of U-shaped groove and the upper surface of the 5th doped region 202,
As shown in fig. lob.The position of opening 4002 may be located on the top side wall of the close device drain region side of U-shaped groove, such as scheme
Shown in 10c.
Have the first layer of the first doping type conductive next, depositing one layer on the exposed surface for formed structure
Film, and second layer insulation film and second layer conductive film are deposited successively in first layer conductive film, then pass through photoetching work
Skill and etching technics are sequentially etched the of second layer conductive film, second layer insulation film, first layer conductive film and exposure
The floating boom 207 of remaining first layer conductive film formation device, the doped region of floating boom 207 and first after one layer of insulation film, etching
203 connections.Remaining second layer insulation is thin after remaining second layer conductive film formation device control gate 209, etching after etching
Film and first layer insulation film are respectively as the second layer gate dielectric layer 208 and floating boom 207 between floating boom 207 and control gate 209
First layer gate dielectric layer 206 between recessed trench surface, as shown in fig. 11a.Second layer insulation film can for silica,
Silicon nitride, silicon oxynitride or the insulating materials for high-ks such as hafnium oxide, its physical thickness are preferably 1 nanometer -20 and received
Rice.First layer conductive film can be any one in polycrystalline germanium SiClx, polysilicon, tungsten, titanium nitride or alloy material.The
Two layers of conductive film can be in the lamination for the polysilicon of doping, metal or between them any one.
After first layer conductive film is formed, first first layer insulation film can be performed etching to form the floating boom of device
207, deposit and the etching of second layer insulation film and second layer conductive film are then carried out again, can so cause what is formed
Control gate 209 surrounds floating boom 207 in the side close to device source region, and then can increase capacitive coupling rate, as shown in figure 11b.
Next, being formed respectively and device in the 4th doped region 201 and the 5th doped region 202 by ion implantation technology
Source region 211 and drain region 212.Source region 211 and drain region 212 are used to be connected with metal electrode, as shown in figure 12.
Finally, can also be formed by the method for ion implanting in the first doped region 203 one layer thin has second
3rd doped region 800 of doping type, the 3rd doped region 800 is connected with drain region 212, as shown in figure 13.
The U-shaped channel semiconductor sensor devices of the present embodiment use U-shaped channel structure, shorten channel length, therein
Pinned diode deeper can be advanced to the photo-absorption region of photosensitive pn-junction diode inside Semiconductor substrate, away from by dry
The surface disturbed.Compared with the semiconductor light-sensing device of planar channeling, the semiconductor light-sensing device of U-shaped channel structure has unit
The advantages of area is small, chip density is high, sensitivity is high, adds the resolution ratio of image sensor chip.
The present invention still has numerous embodiments, all technical sides formed by all use equivalents or equivalent transformation
Case, is within the scope of the present invention.
Claims (8)
1. a kind of manufacture method of U shapes channel semiconductor sensor devices, the U shapes channel semiconductor sensor devices, including：
One Semiconductor substrate with the first doping type；
The U shape channel MOS transistor and a photosensitive pn junction diode formed in the Semiconductor substrate；
The U shapes channel MOS transistor is included in the source with second of doping type formed in the Semiconductor substrate
Area and drain region, the U shape formed in the Semiconductor substrate and between the source region and the drain region that is recessed are recessed
Groove, covers the first layer gate dielectric layer that the surface of the U connected in stars is formed, is formed on the first layer gate dielectric layer
One have the first doping type floating boom, the control gate formed on the floating boom, the control gate with it is described
Floating boom is isolated by second layer gate dielectric layer；
One end of the photosensitive pn junction diodes is connected with the drain region with identical doping polarity, the photosensitive pn knots two
The other end of pole pipe is connected by a floating boom opening with the floating boom with identical doping polarity；
Characterized in that, the manufacture method of the sensor devices includes：
The second doped region with second of doping type is formed in the Semiconductor substrate with the first doping type；
The first doped region with the first doping type is formed in second doped region；
U connected in star of the depression in Semiconductor substrate is formed, the U connected in stars cause first doped region is only located at close
In second doped region of drain region side；
First layer insulation film is formed on the surface of the U connected in stars and the surface of the Semiconductor substrate；
The first layer insulation film is etched, an opening is formed in the first layer insulation film, the opening will be described
First doped region part is exposed；
The formed structure deposit first layer conductive film of covering；
Second layer insulation film is deposited on the first layer conductive film；
Second layer conductive film is deposited on the second layer insulation film；
It is sequentially etched after the second layer conductive film, the second layer insulation film and the first layer conductive film, etching
Remaining first layer conductive film formation floating boom after the remaining second layer conductive film formation control gate, etching, it is described floating
Grid are connected by the opening or the part opening with first doped region；
Continue to etch away the exposed first layer insulation film；
Source region and drain region are formed in the both sides of the control gate, the Semiconductor substrate.
2. the manufacture method of the U shape channel semiconductor sensor devices according to claim 1, it is characterised in that：Also include
One pinned diode, one end of the pinned diode is connected with the drain region with identical doping polarity, the pinning
The other end of diode is connected by the floating boom opening with the floating boom with identical doping polarity.
3. the manufacture method of the U shape channel semiconductor sensor devices according to claim 1, it is characterised in that：It is described floating
Grid opening is located at top side wall of the U connected in stars close to the drain region side, or the floating boom opening is located at close to described
On the upper surface of the Semiconductor substrate of drain region side, or the floating boom opening is located at the U connected in stars close to described
Between the upper surface of the top side wall of drain region side and the Semiconductor substrate of the close drain region side.
4. the manufacture method of the U shape channel semiconductor sensor devices according to claim 1, it is characterised in that：The control
On grid processed are located at the top of the floating boom, or the control gate be located at the top of the floating boom on and to the side of the source region
Extension causes the control gate to surround the floating boom in the side of the source region.
5. the manufacture method of the U shape channel semiconductor sensor devices according to claim 1, it is characterised in that：Described
A kind of doping type is n types, and second of doping type is p types；Or, the first described doping type is p types, institute
It is n types to state second of doping type.
6. the manufacture method of U shapes channel semiconductor sensor devices according to claim 1, it is characterised in that：Forming institute
Also include after stating source region and the drain region：Being formed in first doped region one layer thin has the of second doping type
Three doped regions, the 3rd doped region is connected with the drain region.
7. the manufacture method of the U shape channel semiconductor sensor devices according to claim 1 or claim 5, its feature exists
In：The first described doping type is n types, and second of doping type is p types；Or, the first described doping type
For p types, second of doping type is n types.
8. the manufacture method of U shapes channel semiconductor sensor devices according to claim 1, it is characterised in that：Described first
Layer insulation film and the second layer insulation film be respectively silica, silicon nitride, silicon oxynitride, high-k insulation material
Material or the lamination between them in any one, the first layer conductive film be polycrystalline SiGe, polysilicon, tungsten, nitrogen
Change any one in titanium or alloy material, the second layer conductive film is the polysilicon of doping, metal or they it
Between lamination in any one.
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| CN101707202A (en) * | 2009-11-20 | 2010-05-12 | 苏州东微半导体有限公司 | Semiconductor photosensitization device, production method and application thereof |
| CN101916782A (en) * | 2010-08-12 | 2010-12-15 | 复旦大学 | Depression channel type transistor made of ferroelectric material and manufacturing method thereof |
| CN102136483A (en) * | 2010-01-22 | 2011-07-27 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing CMOS image sensor |
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|---|---|---|---|---|
| CN101707202A (en) * | 2009-11-20 | 2010-05-12 | 苏州东微半导体有限公司 | Semiconductor photosensitization device, production method and application thereof |
| CN102136483A (en) * | 2010-01-22 | 2011-07-27 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing CMOS image sensor |
| CN101916782A (en) * | 2010-08-12 | 2010-12-15 | 复旦大学 | Depression channel type transistor made of ferroelectric material and manufacturing method thereof |
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