CN106449802A - Three-dimensional groove electrode silicon detector with variable center collecting electrodes - Google Patents
Three-dimensional groove electrode silicon detector with variable center collecting electrodes Download PDFInfo
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- CN106449802A CN106449802A CN201611162056.2A CN201611162056A CN106449802A CN 106449802 A CN106449802 A CN 106449802A CN 201611162056 A CN201611162056 A CN 201611162056A CN 106449802 A CN106449802 A CN 106449802A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 69
- 239000010703 silicon Substances 0.000 title claims abstract description 69
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 230000002093 peripheral effect Effects 0.000 claims abstract description 35
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 24
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 24
- 238000002955 isolation Methods 0.000 claims abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 46
- 229910052782 aluminium Inorganic materials 0.000 claims description 46
- 239000004411 aluminium Substances 0.000 claims description 40
- 238000003475 lamination Methods 0.000 claims description 40
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 claims description 20
- 238000005452 bending Methods 0.000 claims description 16
- 239000011159 matrix material Substances 0.000 claims description 16
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 claims description 4
- 230000005855 radiation Effects 0.000 abstract description 14
- 230000005684 electric field Effects 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 3
- 239000011241 protective layer Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 46
- 238000000034 method Methods 0.000 description 10
- 230000008859 change Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241001442589 Convoluta Species 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
Abstract
The invention discloses a three-dimensional groove electrode silicon detector with variable center collecting electrodes. A peripheral electrode comprises a first linear portion, a second linear portion and a bent portion, wherein the first linear portion is parallel to the second linear portion, and the end of the first linear portion is hermetically connected with the end of the second linear portion through the bent portion. A long center electrode is positioned in the middle of the peripheral electrode and parallel to the first linear portion and the second linear portion, and the length of the first linear portion is as same as that of the second linear portion. Isolation silicon is arranged between the peripheral electrode and the long center electrode, a p type silicon substrate is arranged below the long center electrode, and the bottom of the p type silicon substrate is plated with a silicon dioxide protective layer. The three-dimensional groove electrode silicon detector is simple and reasonable in structure and strong in radiation resistance, and solves the problems that electric fields between a positive electrode and a negative electrode are non-uniform, a weak electric field area exists, the size of a single detector unit structure has a great influence on the radiation resistance, and consequently, the size is inconveniently adjusted in the prior art.
Description
Technical field
The invention belongs to high-energy physics and astrophysics technical field, are related to a kind of three-dimensional ditch of variable center passive electrode
Groove electrode silicon detector.
Background technology
Detector is widely used in the technical fields such as high-energy physics, astrophysics, Aero-Space, military affairs, medical science, in high energy
Among physics and astrophysics, therefore detector has strict requirements to detector under strong radiation parameter in itself, it is desirable to its
There is stronger Radiation hardness, and leakage current and total depletion voltage can not be too big, the size for its volume also has difference
Requirement.Traditional " three-dimensional trench electrode silicon detector " has many weak points：First, the electric field between its both positive and negative polarity divides
Cloth is simultaneously uneven, and mostly electric field line is curve, is not most short straight line, and electronics motion in the electric field be along direction of an electric field
, and then cause the drift distance of electronics to increase, with the increase of electronics drift distance, the defect level for producing is radiated to electronics
Impact bigger, cause the decay of the signal of telecommunication；Second, three-dimensional trench electrode silicon detector usually has weak electric field area, the speed of electronics
Degree is very little in weak electric field area, and long in the time of weak electric field area motion, under intense radiation conditions, the signal of telecommunication can be decayed rapidly；
Third, the size variation of three-dimensional trench electrode silicon detector electrode spacing can affect its radiation resistance, single trench cell
Size is big on radiation resistance impact, so three-dimensional trench electrode silicon detector is when array is made, detector cells structure
Size can not be random increase, it has not been convenient to adjust, be so applied to generate significant limitation.
Content of the invention
In order to achieve the above object, the present invention provides a kind of three-dimensional trench electrode silicon detection of variable center passive electrode
Device, simple and reasonable, radiation resistance is strong, solves the non-uniform electric between positive and negative electrode in prior art, exists
Weak electric field area, the size of single detector unit structure is big on radiation resistance impact and cause what volume was inconvenient to adjust to ask
Topic.
The technical solution adopted in the present invention is, a kind of three-dimensional trench electrode silicon detector of variable center passive electrode,
Peripheral electrode is made up of first straight line portion, second straight line portion and bending section, and first straight line portion is parallel with second straight line portion, and first is straight
The end in the end in line portion and second straight line portion by bending section closing connection, the centre of the peripherally located electrode of long central electrode,
Long central electrode is parallel with first straight line portion, second straight line portion, and first straight line portion is identical with the length in second straight line portion；Periphery electricity
Have between pole and long central electrode and isolate silicon body, be p-type silicon matrix below peripheral electrode, long central electrode, in p-type silicon matrix
Bottom be coated with silicon dioxide layer of protection.
The present invention is further characterized in that, further, the long central electrode connects negative pole, and peripheral electrode connects positive pole；In length
Heart electrode is made up of aluminium lamination and heavy doping borosilicate layer, and aluminium lamination is located at the superiors, and heavy doping borosilicate layer is located at below aluminium lamination；Periphery electricity
Pole is made up of aluminium lamination and heavy doping phosphorus silicon layer, and aluminium lamination is located at the superiors, and heavy doping phosphorus silicon layer is located at below aluminium lamination.
Further, the long central electrode connects positive pole, and peripheral electrode connects negative pole；Long central electrode is by aluminium lamination and heavy doping
Phosphorus silicon layer is constituted, and aluminium lamination is located at the superiors, and heavy doping phosphorus silicon layer is located at below aluminium lamination；Peripheral electrode is by aluminium lamination and heavy doping borosilicate
Layer is constituted, and aluminium lamination is located at the superiors, and heavy doping borosilicate layer is located at below aluminium lamination.
Further, the aluminum layer thickness is that 1 μm, heavy doping boron silicon layer thickness is 200 μm～500 μm, heavy doping phosphorus silicon
Thickness degree is 200 μm～500 μm.
Further, the width of the long central electrode is 10 μm, and the width of peripheral electrode is 10 μm.
Further, the bending section is semicircle, and the radius of bending section is equal to electrode spacing, and electrode spacing is less than 50
μm.
Further, the isolation silicon body by silicon dioxide layer and is lightly doped borosilicate layer and constitutes, and silicon dioxide layer is located at most
Upper strata, thickness is 1 μm；Borosilicate layer is lightly doped be located at below silicon dioxide layer, thickness is 200 μm～500 μm.
Further, the p-type silicon matrix is for being lightly doped borosilicate, and its thickness is 20 μm～50 μm.
The invention has the beneficial effects as follows：The present invention's is simple and reasonable, and radiation resistance is strong, detector cells structure
The increase of product, little on its radiation resistance impact, this means that and can adjust under conditions of its radiation resistance is not affected
The structure size of detector is adjusted by length direction, has very big adjustable space, and its practicality is greatly enhanced, and is solved
The problem of traditional three-dimensional trench electrode silicon detector cellular construction size adjustment inconvenience；Additionally, electrocardio in the length of the present invention
The size of pole changes with detector cells conformational volume change, solves traditional three-dimensional trench electrode silicon detector electric field
Skewness, the problem for causing the signal of telecommunication decay rapidly；The peripheral electrode of the present invention is combined with cuboid for cylinder
Structure, it is to avoid there is weak electric field.
Description of the drawings
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Accompanying drawing to be used needed for technology description is had to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, acceptable
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is conventional three-dimensional trench electrode silicon detector structural representation.
Fig. 2 is the structural representation of the present invention.
Fig. 3 is the structural representation of electrode silicon detector array of the present invention.
In figure, 1. central rod electrode, 2. trench electrode, 3. isolate silicon body, 4.p type silicon substrate, 5. silicon dioxide layer of protection,
6. long central electrode, 7. peripheral electrode, 8. first straight line portion, 9. second straight line portion, 10. bending section.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Conventional three-dimensional trench electrode silicon detector structure, as shown in figure 1, trench electrode 2 be surrounded on central rod electrode 1 it
Outward, have between trench electrode 2 and central rod electrode 1 and isolate silicon body 3, below trench electrode 2, central rod electrode 1, have p-type silicon base
Body 4, is provided with 1 μm of silicon dioxide layer of protection 5 in electrode silicon detector bottommost；Central rod electrode 1 connects negative pole, and its radius is 5 μ
M, the superiors are 1 μm of aluminum, and aluminium lamination is presented herein below 180 μm～450 μm of heavy doping borosilicate.Trench electrode 2 connects positive pole, its width
10 μm, the superiors are 1 μm of aluminum, and aluminium lamination is presented herein below 180 μm～450 μm of heavy doping phosphorus silicon.Isolation 3 the superiors of Gui Ti are 1 μm
Silicon dioxide, play a part of to separate both positive and negative polarity, silicon dioxide layer be presented herein below 180 μm～450 μm borosilicate is lightly doped.P-type silicon
Matrix 4 is for being lightly doped borosilicate, and its thickness is 20 μm～50 μm.
Embodiment 1,
The structure of the present invention, as Figure 2-3, peripheral electrode 7 is by first straight line portion 8, second straight line portion 9 and bending section 10
Constitute, first straight line portion 8 is parallel with second straight line portion 9, the end in the end in first straight line portion 8 and second straight line portion 9 is by curved
The closing connection of pars convoluta 10, bending section 10 is preferably semicircle；The centre of 6 peripherally located electrode 7 of long central electrode, long central electrode
6 is parallel with first straight line portion 8, second straight line portion 9, has and isolate silicon body 3, peripheral electrode between peripheral electrode 7 and long central electrode 6
7th, being p-type silicon matrix 4 below long central electrode 6, thick 1 μm silicon dioxide layer of protection 5 is coated with the bottom of p-type silicon matrix 4.
Long central electrode 6 connects negative pole, and peripheral electrode 7 connects positive pole, it is also possible to which long central electrode 6 connects positive pole, and peripheral electrode 7 connects
Negative pole；When long central electrode 6 connects negative pole, long central electrode 6 is made up of aluminium lamination and heavy doping borosilicate layer, and aluminium lamination is located at and most goes up
Layer, heavy doping borosilicate layer is located at below aluminium lamination；When long central electrode 6 connects positive pole, long central electrode 6 is by aluminium lamination and heavy doping phosphorus
Silicon layer is constituted, and aluminium lamination is located at the superiors, and heavy doping phosphorus silicon layer is located at below aluminium lamination.When peripheral electrode 7 connects positive pole, peripheral electrode 7
It is made up of aluminium lamination and heavy doping phosphorus silicon layer, aluminium lamination is located at the superiors, heavy doping phosphorus silicon layer is located at below aluminium lamination；Peripheral electrode 7 connects
During negative pole, peripheral electrode 7 is made up of aluminium lamination and heavy doping borosilicate layer, and aluminium lamination is located at the superiors, and heavy doping borosilicate layer is located at aluminium lamination
Below；Aluminum layer thickness is 1 μm.Wherein, heavy doping borosilicate layer, the thickness of heavy doping phosphorus silicon layer are 200 μm, according to detector
Depending on silicon wafer thickness (not considering the thickness of aluminium lamination and silicon dioxide layer of protection 5), heavy doping boron silicon layer thickness, heavy doping phosphorus silicon layer
Thickness is 9 all with the ratio of detector silicon wafer thickness：10；The purpose of do so mainly two：One, it is ensured that panel detector structure list
The closure of unit, and then increase radiation resistance, second, etching completely, can make to penetrate silicon chip during etching in technique, single after penetrating
Unit can be dropped out from silicon chip.Finally the heavy doping boron silicon layer thickness that establishes, heavy doping phosphorus silicon layer thickness are equal for the two factors comprehensive
For 200 μm.Long central electrode 6, the width of peripheral electrode 7 are 10 μm, because the electrode width of detector is less, electric capacity is got over
Little, the stability of detector is better, but in technique, minimum can only accomplish 10 μm.Silicon dioxide layer of protection 5 has been mainly two works
With：First, protection is total use, because which is lightly doped matrix above, so signal of telecommunication generation is had, directly outer with detector
Enclose the electronic equipment contact signal of telecommunication to change；Second, silicon dioxide plays the role of heavily doped N-type silicon, PN section is produced with base.Right
As long as having for whole detector cells, so that need not done is too thick, such that detector cells become too fat to move.
The superiors of isolation silicon body 3 are silicon dioxide, and silicon dioxide layer is presented herein below and borosilicate is lightly doped；The thickness of silicon dioxide is 1 μm, with
The thickness of aluminum is identical, it is therefore an objective to completely cuts off both positive and negative polarity to prevent short circuit, primarily serves and be connected with electrode, so need not be too
Thickness, too thick unfavorable to detector detectable signal because isolation detection two electrodes silicon dioxide also can be thickening；Boron is lightly doped
The thickness of silicon is 200 μm, identical with heavily doped silicon, and PN is in this position extension；P-type silicon matrix 4 is for being lightly doped borosilicate, p-type silicon
4 thickness of matrix is 50 μm, prevents from technique during etching cutting through silicon chip, numerical value by required silicon wafer thickness (do not consider aluminium lamination with
The thickness of silicon dioxide layer of protection 5) determined, 4 thickness of p-type silicon matrix is 1 with silicon wafer thickness ratio：10.
Embodiment 2,
The structure of the present invention, the thickness except heavy doping borosilicate layer, heavy doping phosphorus silicon layer is 500 μm, and borosilicate is lightly doped
Thickness be 500 μm, 4 thickness of p-type silicon matrix be 20 μm in addition, remainder is same as Example 1.
Embodiment 3,
The structure of the present invention, the thickness except heavy doping borosilicate layer, heavy doping phosphorus silicon layer is 270 μm, and borosilicate is lightly doped
Thickness be 270 μm, 4 thickness of p-type silicon matrix be 30 μm in addition, remainder is same as Example 1.
When traditional three-dimensional trench electrode silicon detector considers that positive pole is located at center, its breakdown voltage substantially reduces, and
The long central electrode 6 of the present invention causes both positive and negative polarity position difference, the impact relative reduction to breakdown voltage, and long central electrode
6 change, i.e. M with the change of peripheral electrode 7pWith MnMatch (Mn-Mp=2y), wherein MpRepresent the length of long central electrode 6,
MnRepresent the length of peripheral electrode 7, y is the electrode spacing of first straight line portion 8, second straight line portion 9 and long central electrode 6, according to
The principle of uniform fully- depleted, x=y, x is bending section 10 and the electrode spacing of long central electrode 6, sees Fig. 2；Long central electrode 6
Change in the longitudinal direction, and width is constant, peripheral electrode 7 can change on long and width.
As shown in figure 3, the three-dimensional trench electrode silicon detector array of variable center passive electrode, be by the detection in Fig. 2
Device cellular construction is mutually nested to be combined.
In technique, the present invention is similar with the etching technics of conventional three-dimensional trench electrode silicon detector, long central electrode 6,
Peripheral electrode 7 is etched by litho machine, and ion implanting is formed.Etching is the length direction along detector cells structure, first
First the first straight line portion 8 (n+ line) being parallel to each other, long central electrode 6 (p+ line), second straight line portion 9 (n+ line) are etched out,
First straight line portion 8, long central electrode 6, the live width in second straight line portion 9 are 10 μm, and its length can voluntarily be intended according to production requirement
Fixed (not affecting its radiation resistance), then bending section 10 is etched, bending section 10 is preferably semicircle, and 10 width of bending section is 10 μ
m；The centre of 6 peripherally located electrode 7 of long central electrode, i.e. long central electrode 6 are respectively to first straight line portion 8, second straight line portion 9
Apart from identical, long central electrode 6 to the distance in first straight line portion 8 or second straight line portion 9 is referred to as electrode spacing, and the half of bending section 10
Footpath is equal to electrode spacing, meets Mn-Mp=2y, and x=y；Electrode spacing is less than 50 μm (can voluntarily draft according to production).
The peripheral electrode 7 for constituting each two detector cells of electrode silicon detector array of the present invention has lap, carves
Which is made to be staggered with previous row as far as possible during erosion, as shown in Figure 3.Long central electrode 6, the etching of peripheral electrode 7 are all incomplete
, 30 μm or so of p-type silicon matrix 4 will be finally reserved, the bottommost of the electrode silicon detector plates the dioxy that a layer thickness is 1 μm
SiClx protective layer 5, the thickness of silicon dioxide layer of protection 5 adjustable but can not be too thick.
It should be noted that herein, term " including ", "comprising" or its any other variant are intended to non-row
The including of his property, so that a series of process including key elements, method, article or equipment not only include those key elements, and
And also include other key elements for being not expressly set out, or also include intrinsic for this process, method, article or equipment institute
Key element.In the absence of more restrictions, the key element for being limited by sentence "including a ...", it is not excluded that including institute
Also there is other identical element in process, method, article or the equipment of stating key element.
Presently preferred embodiments of the present invention is the foregoing is only, is not intended to limit protection scope of the present invention.All
Any modification, equivalent substitution and improvement that is made within the spirit and principles in the present invention etc., are all contained in protection scope of the present invention
Interior.
Claims (9)
1. the three-dimensional trench electrode silicon detector of a kind of variable center passive electrode, it is characterised in that peripheral electrode (7) is by first
Line part (8), second straight line portion (9) and bending section (10) are constituted, and first straight line portion (8) are parallel with second straight line portion (9), and first
The end of the end of line part (8) and second straight line portion (9) is by bending section (10) closing connection, and long central electrode (6) are located at
The centre of peripheral electrode (7), long central electrode (6) are parallel with first straight line portion (8), second straight line portion (9), first straight line portion
(8) identical with the length of second straight line portion (9)；Have between peripheral electrode (7) and long central electrode (6) and isolate silicon body (3), periphery
Being p-type silicon matrix (4) below electrode (7), long central electrode (6), silicon dioxide guarantor is coated with the bottom of p-type silicon matrix (4)
Sheath (5).
2. the three-dimensional trench electrode silicon detector of a kind of variable center passive electrode according to claim 1, its feature exists
In long central electrode (6) connect negative pole, and peripheral electrode (7) connects positive pole；Long central electrode (6) are by aluminium lamination and heavy doping borosilicate
Layer is constituted, and aluminium lamination is located at the superiors, and heavy doping borosilicate layer is located at below aluminium lamination；Peripheral electrode (7) is by aluminium lamination and heavy doping phosphorus silicon
Layer is constituted, and aluminium lamination is located at the superiors, and heavy doping phosphorus silicon layer is located at below aluminium lamination.
3. the three-dimensional trench electrode silicon detector of a kind of variable center passive electrode according to claim 1, its feature exists
In long central electrode (6) connect positive pole, and peripheral electrode (7) connects negative pole；Long central electrode (6) are by aluminium lamination and heavy doping phosphorus silicon
Layer is constituted, and aluminium lamination is located at the superiors, and heavy doping phosphorus silicon layer is located at below aluminium lamination；Peripheral electrode (7) is by aluminium lamination and heavy doping borosilicate
Layer is constituted, and aluminium lamination is located at the superiors, and heavy doping borosilicate layer is located at below aluminium lamination.
4. the three-dimensional trench electrode silicon detector of a kind of variable center passive electrode according to Claims 2 or 3, its feature
It is, the aluminum layer thickness is that 1 μm, heavy doping boron silicon layer thickness is 200 μm～500 μm, and heavy doping phosphorus silicon layer thickness is 200 μm
～500 μm.
5. the three-dimensional trench electrode silicon detector of a kind of variable center passive electrode according to claim 1, its feature exists
In the width of long central electrode (6) is 10 μm, and the width of peripheral electrode (7) is 10 μm.
6. the three-dimensional trench electrode silicon detector of a kind of variable center passive electrode according to claim 1, its feature exists
In described bending section (10) are semicircle, and the radius of bending section (10) is equal to electrode spacing, and electrode spacing is less than 50 μm.
7. the three-dimensional trench electrode silicon detector of a kind of variable center passive electrode according to claim 1, its feature exists
In, isolation silicon body (3) by silicon dioxide layer and is lightly doped borosilicate layer and constitutes, and silicon dioxide layer is located at the superiors, thickness be
μm；Borosilicate layer is lightly doped be located at below silicon dioxide layer, thickness is 200 μm～500 μm.
8. the three-dimensional trench electrode silicon detector of a kind of variable center passive electrode according to claim 1, its feature exists
In described p-type silicon matrix (4), for borosilicate is lightly doped, its thickness is 20 μm～50 μm.
9. the three-dimensional trench electrode silicon detector of a kind of variable center passive electrode according to claim 1, its feature exists
In the thickness of silicon dioxide layer of protection (5) is 1 μm.
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Cited By (5)
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| CN107342335A (en) * | 2017-08-09 | 2017-11-10 | 湘潭大学 | Long honeycomb core-shell electrode three dimension detector |
| CN108321218A (en) * | 2018-03-20 | 2018-07-24 | 湘潭大学 | A kind of three-dimensional parallel-plate electrode semiconductor detector |
| CN109994455A (en) * | 2019-04-01 | 2019-07-09 | 湘潭大学 | Two-sided wrong embedded three dimension detector of one dimensional arrangement and preparation method thereof, array |
| CN110611009B (en) * | 2019-09-06 | 2021-02-02 | 湘潭大学 | Nested three-dimensional groove electrode silicon detector |
| CN113659018A (en) * | 2021-08-16 | 2021-11-16 | 中国科学院微电子研究所 | Detector |
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|---|---|---|---|---|
| CN107342335A (en) * | 2017-08-09 | 2017-11-10 | 湘潭大学 | Long honeycomb core-shell electrode three dimension detector |
| CN107342335B (en) * | 2017-08-09 | 2018-11-02 | 湘潭大学 | Long honeycomb core-shell electrode three dimension detector |
| CN108321218A (en) * | 2018-03-20 | 2018-07-24 | 湘潭大学 | A kind of three-dimensional parallel-plate electrode semiconductor detector |
| CN109994455A (en) * | 2019-04-01 | 2019-07-09 | 湘潭大学 | Two-sided wrong embedded three dimension detector of one dimensional arrangement and preparation method thereof, array |
| CN109994455B (en) * | 2019-04-01 | 2024-05-03 | 湘潭大学 | One-dimensional arrangement double-sided misplaced three-dimensional detector, preparation method thereof and array |
| CN110611009B (en) * | 2019-09-06 | 2021-02-02 | 湘潭大学 | Nested three-dimensional groove electrode silicon detector |
| CN113659018A (en) * | 2021-08-16 | 2021-11-16 | 中国科学院微电子研究所 | Detector |
| CN113659018B (en) * | 2021-08-16 | 2024-01-26 | 中国科学院微电子研究所 | Detector |
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| CN106449802B (en) | 2018-04-13 |
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