CN102214723B - Semiconductor radiation sensing device and manufacturing method thereof - Google Patents
Semiconductor radiation sensing device and manufacturing method thereof Download PDFInfo
- Publication number
- CN102214723B CN102214723B CN2011101457010A CN201110145701A CN102214723B CN 102214723 B CN102214723 B CN 102214723B CN 2011101457010 A CN2011101457010 A CN 2011101457010A CN 201110145701 A CN201110145701 A CN 201110145701A CN 102214723 B CN102214723 B CN 102214723B
- Authority
- CN
- China
- Prior art keywords
- matrix
- columnar electrode
- pad
- silicon
- radiosensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention relates to the field of semiconductor sensors and discloses a semiconductor radiation sensing device and a manufacturing method thereof. The sensing device comprises at least one radiation sensing unit, wherein each radiation sensing unit comprises a first substrate, a first columnar electrode and a second columnar electrode; the first substrate comprises a first surface and a second surface; the first columnar electrode comprises first metal posts and N-type doped silicon surrounding the first metal posts; the second columnar electrode comprises more than two second metal posts and P-type doped silicon surrounding the second metal posts; the first columnar electrode and the second columnar electrode are embedded into the first substrate and pass through the first surface and the second surface of the substrate; the more than two metal posts are arranged in an equilateral polygon mode; and the first columnar electrode is arranged at the geometric center of the equilateral polygon. According to the invention, the thin dead layer thickness of the sensing device, the smaller equivalent capacitance and the shorter signal drifting process can be realized, thus improving the energy resolution, reducing the response time and decreasing the lower limit of energy detection.
Description
Technical field
The present invention relates to the semiconductor transducer field, be specifically related to a kind of semiconductor radiation sensing device and preparation method thereof.
Background technology
Semiconductor radiation sensing device is widely used in fields such as nuclear tests, space exploration, anti-biochemistry, energy spectrum analysis; It mainly comprises: surface barrier type sensor, junction type sensor, silicon drift sensor (Silicon Drift Detector, SDD) etc.Surface barrier type sensor: generally adopt the n type single crystal silicon sheet, and make above gold is deposited on, therefore also often be called gold silicon surface barrier type sensor.It is to utilize contact potential difference between gold and the semiconductor, forms the depletion layer that does not have free carrier in semiconductor, namely is the sensitive volume of sensor.The junction type sensor, such as PIN type sensor: the similar junction semiconductor diode of structure, reverse bias forms full depletion region.Surface barrier sensor or junction type sensor produce electron-hole pair when receiving incoming particle or photon, electronics is collected by different electrodes respectively with the hole.SDD adopts planar technique, makes the electrodes of special constructions on silicon chip two surface, under suitable bias voltage, makes silicon chip be in full spent condition, and forms one and be parallel to upper and lower surface, uniform electric field.When charged particle or photon pass this depletion layer, the meeting off-energy also produces electron-hole pair, wherein the hole is absorbed by near electrode, electronics is then drifted about to other direction by electric-field compulsion, effectively collect these electronics, just can obtain the information of incoming particle, such as energy, position, time etc.These a few class sensors are when work, radiation needs the metal electrode of break-through sensor/P type or N-type doped layer to arrive radiation sensitive regions, and metal electrode layer, N-type or P type doped layer do not produce useful signal and can consume the energy of certain incoming particle, are called as the sensor dead layer.The thickness of sensor dead layer has directly limited the energy resolution of sensor, and the lower limit of energy detection.
Therefore, the key that the thickness that how to reduce the sensor dead layer becomes and improves the semiconductor radiation sensing device energy resolution, reduces the energy detection lower limit.The scheme energy resolution of prior art is low, limit for height under the energy detection.
Summary of the invention
The technical problem that (one) will solve
The technical problem to be solved in the present invention is: the energy resolution, the reduction energy detection lower limit that how to improve semiconductor radiation sensing device (being also referred to as semiconductor radiation detector).
(2) summary of the invention
In order to solve the problems of the technologies described above, the invention provides a kind of semiconductor radiation sensing device, comprise at least one radiosensitive unit, described radiosensitive unit comprises: the first matrix, the first columnar electrode and the second columnar electrode;
Described the first matrix comprises first surface and second surface;
Described the first columnar electrode comprises the first metal column and around the N-type doped silicon of described the first metal column;
Described the second columnar electrode comprises the second metal column and around the P type doped silicon of described the second metal column;
It is inner that described the first columnar electrode and described the second columnar electrode are embedded in described the first matrix, and run through first surface and the second surface of described the first matrix;
Described the second metal column is more than two, and is arranged in regular polygon; Described the first columnar electrode is positioned at the geometric center of described regular polygon.
Wherein, described radiosensitive unit also comprises the first pad on the end face that is positioned at described the first columnar electrode and described the second columnar electrode.
Wherein, described radiosensitive unit also comprises the second matrix that engages with described the first matrix;
Described the second matrix comprises first surface and second surface;
Described the second matrix comprises the second pad on the signal processing circuit of described radiosensitive unit, the first surface that is positioned at described the second matrix or the second surface, and described the second pad is electrically connected with described signal processing circuit;
The second pad of described the second matrix engages with the first pad of described the first matrix.
Preferably, the first pad bonding of the second pad of described the second matrix and described the first matrix.
Wherein, described the first matrix and/or the second matrix are silicon substrates.
Wherein, described the first metal column and/or the second metal column are copper.
Wherein, described the second columnar electrode contains orthohexagonal 6 the second metal columns of formation.
Wherein, described at least one radiosensitive unit is arranged in array.
The present invention also provides a kind of manufacture method of above-mentioned semiconductor radiation sensing device, may further comprise the steps:
S1, provide the first matrix, make the first silicon through hole and the second silicon through hole at the first matrix;
S2, in the first silicon through hole of described the first matrix and the second silicon through hole, make respectively the first columnar electrode and the second columnar electrode.
After step S2, also comprise step: S3, make the first pad at the first surface of described the first matrix.
After step S3, also comprise step: S4, the second matrix is provided, make the signal processing that described signal processing circuit is carried out radiosensitive unit at the second matrix surface, make the second pad at described the second matrix surface, the second pad is connected signal processing circuit, with described the first matrix and the second matrix bonding.
(3) beneficial effect
The present invention has following beneficial effect: the present invention adopts the second columnar electrode of regular polygon and first columnar electrode at regular polygon center, so that suitably entirely exhausting the regular polygon interior zone under the back bias voltage, and formation gradient electric field, the columnar electrode surface is little, the sensitizing range part need not metal electrode and covers, and then can realize thin sensor dead layer thickness (the thinnest approximately several nanometers of autoxidation layer thickness that reach), less equivalent capacity, shorter signal drift process; Thereby can improve energy resolution, reduce the response time and reduce the energy detection lower limit.Best results when described regular polygon is regular hexagon.
Description of drawings
Fig. 1 a is the vertical view of a radiosensitive unit of semiconductor radiation sensing device of the present invention;
Fig. 1 b is the profile along the A1A2 line of Fig. 1;
Fig. 2 is the schematic diagram of step S1 in the manufacture method of the present invention;
Fig. 3 a～3g is the schematic diagram of making columnar electrode;
Fig. 4 is the schematic diagram of step S3 in the manufacture method of the present invention;
Fig. 5 is the schematic diagram of step S4 in the manufacture method of the present invention;
Fig. 6 is the method flow diagram of embodiments of the invention three.
Wherein, the first matrix (or claiming the first wafer): 100; The first columnar electrode 110; The second columnar electrode 120; The one TSV silicon through hole 111, the 2nd TSV silicon through hole 121; N-type doped silicon 112; P type doped silicon 122; The first metal column 113; The second metal column 123; The first pad 114,124; The second matrix (or claiming the second wafer): 200; Oxide layer: 300.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples are used for explanation the present invention, but are not used for limiting the scope of the invention.
Embodiment one
Such as Fig. 1～shown in Figure 5, the invention provides a kind of semiconductor radiation sensing device, contain at least 1 radiosensitive unit.Radiosensitive unit includes as shown in Figure 1: the first matrix 100, the first columnar electrode 110, the second columnar electrode 120.
Described the first matrix 100 contains first surface and second surface;
Described the first columnar electrode 110 contains the first metal column 113 and around the N-type doped silicon 112 of the first metal column;
Described the second columnar electrode 120 contains the second metal column 123 and around the P type doped silicon 122 of the second metal column;
It is inner that described the first columnar electrode 110 and described the second columnar electrode 120 embed the first matrix, vertically runs through described matrix first surface and second surface;
Described the second columnar electrode 120 contains 6 metal columns, is positive 6 limit shapes and arranges; Described the first columnar electrode 110 is positioned at the center of described the second positive 6 limit shapes that columnar electrode 120 consists of, and overlooks effect as shown in Figure 1a, along the arbitrary center of circle radial section figure that crosses of positive 6 limit shapes shown in Fig. 1 b;
Under the operating state, the first columnar electrode 110 and the second columnar electrode 120 apply reverse biased, and positive 6 limit shape interior zones are exhausted entirely, drift field radially between the first columnar electrode and the second columnar electrode.Inspire electron-hole pair when radiation enters positive 6 limit shape interior zones (except the first columnar electrode), electronics and hole to meeting radially electric field arrive respectively the first columnar electrode and the second columnar electrode, form signal.
Described matrix is silicon substrate, and resistivity is greater than 1000 Ω cm; Can also be other Semiconductor substrate;
The first metal column of described the first columnar electrode is copper, is that phosphorus (P) mixes around the N-type doped silicon of the first metal column, also can be other element doping;
The second metal column of described the second columnar electrode is copper, is that boron (B) mixes around the P type doped silicon of the second metal column, also can be other element doping.
Embodiment two
Such as Fig. 1～shown in Figure 5, the invention provides a kind of semiconductor radiation sensing device, contain the signal processing circuit of at least 1 radiosensitive unit, radiosensitive unit, this signal processing circuit is prior art.Radiosensitive unit includes as shown in Figure 5: the first matrix 100, the first columnar electrode 110, the second columnar electrode 120, the first pad 114 and the 124, second matrix 200.
The structure of the first matrix 100, the first columnar electrode 110, the second columnar electrode 120 is identical with embodiment one.
Described the first pad 114 is positioned at an end of described the first columnar electrode 110, and the first pad 124 is positioned at described the second columnar electrode 120 1 ends;
Described the second matrix 200 is positioned on described the first matrix 100;
Described the second matrix 200 contains signal processing circuit and the second pad (not shown), and described the second pad is electrically connected with signal processing circuit, and described the second pad engages with described the first pad, for example metal eutectic bonding, or welding;
Preferably, described the second matrix is silicon substrate, and resistivity is greater than 1000 Ω cm; Can also be other Semiconductor substrate.
Embodiment three
Such as Fig. 1～shown in Figure 5, the invention provides a kind of new manufacture method for above-mentioned semiconductor radiation sensing device design, comprise step:
S1, provide the first wafer 100, make a TSV silicon through hole 111 and the 2nd TSV silicon through hole 121 at wafer, as shown in Figure 2.The making of TSV silicon through hole is specific as follows: apply photoresist, photolithographic exposure develops and makes TSV silicon through hole mask; Photoresist is removed in the break-through of deep reaction ion (DRIE) etch silicon wafer.The method of dual surface lithography, hole break-through at two-sided quarter is also adopted in the making of TSV silicon through hole; Also can adopt additive method, such as laser drilling etc.
S2, make respectively the first columnar electrode 110 and the second columnar electrode 120 at the TSV of described the first wafer silicon through hole 111 and 121, as shown in Figure 3.Columnar electrode is made as follows in detail: 1, described the first wafer of oxidation, and surface oxide layer (silicon dioxide) is labeled as 300, shown in Fig. 3 a; 2, apply photoresist at the first wafer positive and negative, exposure imaging exposes the 2nd TSV silicon through hole at the second columnar electrode place, seals a TSV silicon through hole 111 at the first columnar electrode 110 places, shown in Fig. 3 b; 3, corrode the silicon dioxide in the 2nd TSV silicon through hole 121 zones at the second columnar electrode 120 places that expose, comprise the silicon dioxide of surface, side, remove photoresist; Diffusing, doping boron (B) forms P type doped silicon 122 at the 2nd TSV through-silicon via sidewall, shown in Fig. 3 c; 4, oxidation is shown in Fig. 3 d; 5, apply photoresist at the first wafer positive and negative, exposure imaging exposes the TSV silicon through hole 111 at the first columnar electrode 110 places, seals the 2nd TSV silicon through hole 121 at the second columnar electrode place, shown in Fig. 3 e; 6, corrode the silicon dioxide in a TSV silicon through hole 111 zones at the first columnar electrode 110 places that expose, comprise the silicon dioxide of surface, side, remove photoresist; Diffusing, doping phosphorus (P) forms N-type doped silicon 112 at a TSV through-silicon via sidewall; Then annealing activates, shown in Fig. 3 f; 7, apply photoresist in the first wafer positive and negative, exposure exposes the second columnar electrode region, corrodes the silicon dioxide of the 2nd TSV silicon through hole 121 surfaces, the second columnar electrode 120 regions, sidewall; Remove photoresist, TSV silicon through hole 111 and 121 is filled in electro-coppering, removes the unnecessary silicon dioxide layer in surface, shown in Fig. 3 g; 8, filling copper electroplates, process is as follows: secondary wafer is provided, makes Seed Layer gold or copper, interim bonding secondary wafer and described the first wafer, TSV silicon through hole 111 and TSV silicon through hole 121 are filled in bottom-up plating, form the first metal column 113 and the second metal column 123.The removal of surface silica dioxide layer can be adopted the BHF corrosion, also can adopt the conventional burn into lithographic method of other semiconductors.9, alloy annealing under 300 degrees centigrade of-600 degrees centigrade of nitrogen hydrogen atmospheres, the first metal column 113 forms ohmic contact with N-type doped silicon 112, the second metal column 123 forms ohmic contact with P type doped silicon 122, finally is made into the first columnar electrode and the second columnar electrode.
Embodiment four
The invention provides a kind of manufacture method of making semiconductor radiation sensing device, comprising:
Step S1 and the S2 identical with embodiment three;
S3, make the first pad 114,124 at the first surface of described the first wafer, as shown in Figure 4.Pad can be made of physical vapour deposition (PVD), also can make of electrochemical deposition method.Described the first pad can be that integrated circuit is made the conventional pad in field or soldered ball, such as aluminum pad, and soldering ball etc.; Also can be the dimpling point soldered ball (Microbump) of microbonding dish or 3D encapsulation field, such as copper tin dimpling point.
Embodiment five
The step S1 identical with embodiment four～S3;
S4, provide the second wafer 200, make the signal that integrated circuit (IC) (being described signal processing circuit) carries out radiosensitive unit at the second crystal column surface and process, make the second pad at described the second crystal column surface, the second pad is connected integrated circuit (IC).Described the first wafer and described the second wafer are passed through the pad bonding, as shown in Figure 5.The signal processing circuit of described the second wafer 200 and described the second pad can be on the same surfaces of described the second wafer, also can be on two relative surfaces of described wafer.Under the same surface condition, can adopt the re-wiring layer interconnection; In apparent surface's situation, can adopt the TSV interconnecting silicon through holes.Wherein, bonding refers to that atom is linked togather the process that forms molecule in the mode of " key ".The mode of bonding comprises metal bonding, crystal bonding etc.
Above execution mode only is used for explanation the present invention; and be not limitation of the present invention; the those of ordinary skill in relevant technologies field; in the situation that do not break away from the spirit and scope of the present invention; can also make a variety of changes and modification; therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (11)
1. a semiconductor radiation sensing device is characterized in that, comprises at least one radiosensitive unit, and described radiosensitive unit comprises: the first matrix, the first columnar electrode and the second columnar electrode;
Described the first matrix comprises first surface and second surface;
Described the first columnar electrode comprises the first metal column and around the N-type doped silicon of described the first metal column;
Described the second columnar electrode comprises the second metal column and around the P type doped silicon of described the second metal column;
It is inner that described the first columnar electrode and described the second columnar electrode are embedded in described the first matrix, and run through first surface and the second surface of described the first matrix;
Described the second metal column is more than three, and is arranged in regular polygon; Described the first columnar electrode is positioned at the geometric center of described regular polygon.
2. sensor as claimed in claim 1 is characterized in that, described radiosensitive unit also comprises the first pad on the end face that is positioned at described the first columnar electrode and described the second columnar electrode.
3. sensor as claimed in claim 2 is characterized in that, described radiosensitive unit also comprises the second matrix that engages with described the first matrix;
Described the second matrix comprises first surface and second surface;
Described the second matrix comprises the second pad on the signal processing circuit of described radiosensitive unit, the first surface that is positioned at described the second matrix or the second surface, and described the second pad is electrically connected with described signal processing circuit;
The second pad of described the second matrix engages with the first pad of described the first matrix.
4. sensor as claimed in claim 3 is characterized in that, the first pad bonding of the second pad of described the second matrix and described the first matrix.
5. sensor as claimed in claim 3 is characterized in that, described the first matrix and/or the second matrix are silicon substrates.
6. sensor as claimed in claim 1 is characterized in that, described the first metal column and/or the second metal column are copper.
7. sensor as claimed in claim 1 is characterized in that, described the second columnar electrode contains orthohexagonal 6 the second metal columns of formation.
8. sensor as claimed in claim 1 is characterized in that, described at least one radiosensitive unit is arranged in array.
9. the manufacture method of each semiconductor radiation sensing device of claim 1～8 is characterized in that, may further comprise the steps:
S1, provide the first matrix, make the first silicon through hole and the second silicon through hole at the first matrix;
S2, in the first silicon through hole of described the first matrix and the second silicon through hole, make respectively the first columnar electrode and the second columnar electrode.
10. method as claimed in claim 9 is characterized in that, also comprises step: S3 after step S2, makes the first pad at the first surface of described the first matrix.
11. method as claimed in claim 10, it is characterized in that, after step S3, also comprise step: S4, the second matrix is provided, make the signal processing that described signal processing circuit is carried out radiosensitive unit at the second matrix surface, make the second pad at described the second matrix surface, the second pad is connected signal processing circuit, with the first pad of described the first matrix and the second pad bonding of the second matrix.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101457010A CN102214723B (en) | 2011-06-01 | 2011-06-01 | Semiconductor radiation sensing device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101457010A CN102214723B (en) | 2011-06-01 | 2011-06-01 | Semiconductor radiation sensing device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102214723A CN102214723A (en) | 2011-10-12 |
| CN102214723B true CN102214723B (en) | 2013-03-27 |
Family
ID=44745945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101457010A Expired - Fee Related CN102214723B (en) | 2011-06-01 | 2011-06-01 | Semiconductor radiation sensing device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102214723B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412228B (en) * | 2011-10-31 | 2014-04-02 | 中国科学院微电子研究所 | Coaxial through-silicon-via interconnection structure and manufacturing method thereof |
| CN103367307B (en) * | 2012-03-27 | 2016-03-23 | 南亚科技股份有限公司 | Wear silicon through hole and its formation method |
| CN103787264B (en) * | 2014-01-21 | 2016-06-15 | 华进半导体封装先导技术研发中心有限公司 | The manufacture method of a kind of silicon via devices being applied to high-speed wideband light network and device thereof |
| JP6315854B2 (en) | 2014-06-27 | 2018-04-25 | インテル・コーポレーション | Through-silicon via-based solar cells |
| CN104867905B (en) * | 2015-03-26 | 2017-10-10 | 北京大学 | A kind of semiconductor structure comprising silicon hole and its manufacture method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6768180B2 (en) * | 2002-04-04 | 2004-07-27 | C. Andre T. Salama | Superjunction LDMOST using an insulator substrate for power integrated circuits |
| CN101441112A (en) * | 2008-12-18 | 2009-05-27 | 中国科学院微电子研究所 | Non-refrigeration infrared detector array based on monocrystalline silicon PN junction and preparation method thereof |
| CN102308392A (en) * | 2009-02-18 | 2012-01-04 | 高通股份有限公司 | The improved power conversion efficiency (pce) of silicon through hole is worn in use |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7135740B2 (en) * | 2004-09-27 | 2006-11-14 | Teledyne Licensing, Llc | High voltage FET switch with conductivity modulation |
| TWI344694B (en) * | 2007-08-06 | 2011-07-01 | Siliconware Precision Industries Co Ltd | Sensor-type package and method for fabricating the same |
| TWI372457B (en) * | 2009-03-20 | 2012-09-11 | Ind Tech Res Inst | Esd structure for 3d ic tsv device |
-
2011
- 2011-06-01 CN CN2011101457010A patent/CN102214723B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6768180B2 (en) * | 2002-04-04 | 2004-07-27 | C. Andre T. Salama | Superjunction LDMOST using an insulator substrate for power integrated circuits |
| CN101441112A (en) * | 2008-12-18 | 2009-05-27 | 中国科学院微电子研究所 | Non-refrigeration infrared detector array based on monocrystalline silicon PN junction and preparation method thereof |
| CN102308392A (en) * | 2009-02-18 | 2012-01-04 | 高通股份有限公司 | The improved power conversion efficiency (pce) of silicon through hole is worn in use |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102214723A (en) | 2011-10-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102214723B (en) | Semiconductor radiation sensing device and manufacturing method thereof | |
| CN102386145B (en) | Electronic device including the feature in groove | |
| US6204087B1 (en) | Fabrication of three-dimensional architecture for solid state radiation detectors | |
| US8558188B2 (en) | Method for manufacturing solid-state thermal neutron detectors with simultaneous high thermal neutron detection efficiency (>50%) and neutron to gamma discrimination (>1.0E4) | |
| Pellegrini et al. | 3D double sided detector fabrication at IMB-CNM | |
| Zoboli et al. | Double-sided, double-type-column 3-D detectors: Design, fabrication, and technology evaluation | |
| CN101599308B (en) | Micro nuclear battery with protection ring structure and manufacturing method thereof | |
| CN110854147B (en) | Detection substrate and manufacturing method thereof | |
| US20140252520A1 (en) | Neutron-detecting apparatuses and methods of fabrication | |
| WO2009117477A2 (en) | Neutron detector with gamma ray isolation | |
| CN110010591B (en) | Three-dimensional double-sided silicon microstrip detector and preparation method thereof | |
| CN101740502B (en) | Light sensitive component array forming method of mercury cadmium telluride micro-table-board infrared detection chip | |
| CN108428750B (en) | Square opening and closing type box-shaped electrode semiconductor detector | |
| CN102735350A (en) | Silicon photo-multiplier structure, production and usage | |
| EP1061587B1 (en) | Monolithic semiconductor particle detector and method for its manufacture | |
| CN209675281U (en) | The two-sided wrong embedded three dimension detector of one dimensional arrangement and its array | |
| CN106486501A (en) | X-ray sensor and manufacturing method thereof | |
| RU2408955C1 (en) | P-i-n-diode neutron radiation converter | |
| CN209675301U (en) | The two-sided wrong embedded three dimension detector of two-dimensional arrangements and its array | |
| CN111863846B (en) | Fan-shaped alternating silicon pixel detector | |
| CN213093204U (en) | Silicon drift detector and junction field effect transistor integrated chip | |
| Lim et al. | Cylindrical silicon-on-insulator microdosimeter: Design, fabrication and TCAD modeling | |
| CN212542438U (en) | Fan-shaped alternating silicon pixel detector | |
| CN114447149A (en) | Edge incidence detector and manufacturing method thereof | |
| CN206441737U (en) | A kind of fast recovery power diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Ma Shenglin Inventor after: Zhu Wenhui Inventor after: Sun Xin Inventor after: Jin Yufeng Inventor after: Chen Jing Inventor after: Jiu Min Inventor before: Ma Shenglin |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: MA SHENGLIN TO: MA SHENGLIN ZHU YUNHUI SUN XIN JIN YUFENG CHEN JING MIU MIN |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130327 Termination date: 20170601 |