CN102214723A - Semiconductor radiation sensing device and manufacturing method thereof - Google Patents
Semiconductor radiation sensing device and manufacturing method thereof Download PDFInfo
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Abstract
The invention relates to the field of semiconductor sensors and discloses a semiconductor radiation sensing device and a manufacturing method thereof. The sensing device comprises at least one radiation sensing unit, wherein each radiation sensing unit comprises a first substrate, a first columnar electrode and a second columnar electrode; the first substrate comprises a first surface and a second surface; the first columnar electrode comprises first metal posts and N-type doped silicon surrounding the first metal posts; the second columnar electrode comprises more than two second metal posts and P-type doped silicon surrounding the second metal posts; the first columnar electrode and the second columnar electrode are embedded into the first substrate and pass through the first surface and the second surface of the substrate; the more than two metal posts are arranged in an equilateral polygon mode; and the first columnar electrode is arranged at the geometric center of the equilateral polygon. According to the invention, the thin dead layer thickness of the sensing device, the smaller equivalent capacitance and the shorter signal drifting process can be realized, thus improving the energy resolution, reducing the response time and decreasing the lower limit of energy detection.
Description
Technical field
The present invention relates to the semiconductor transducer field, be specifically related to a kind of semicoductor radiating sensor and preparation method thereof.
Background technology
The semicoductor radiating sensor is widely used in fields such as nuclear tests, space exploration, anti-biochemistry, energy spectrum analysis; It mainly comprises: and surface barrier type sensor, junction type sensor, silicon drift sensor (Silicon Drift Detector, SDD) etc.Surface barrier type sensor: generally adopt the n type single crystal silicon sheet, and deposition of gold is made in the above, so also often be called gold silicon surface barrier type sensor.It is to utilize contact potential difference between gold and the semiconductor, forms the depletion layer that does not have free carrier in semiconductor, promptly is the sensitive volume of sensor.The junction type sensor, as PIN type sensor: similar junction semiconductor diode, reverse bias forms full depletion region.Surface barrier sensor or junction type sensor produce electron-hole pair when receiving incoming particle or photon, electronics is collected by different electrodes respectively with the hole.SDD adopts planar technique, makes the electrodes of special constructions on silicon chip two surface, under suitable bias voltage, makes silicon chip be in full spent condition, and forms one and be parallel to upper and lower surface, electric field uniformly.When charged particle or photon pass this depletion layer, the meeting off-energy also produces electron-hole pair, wherein the hole is absorbed by near electrode, electronics is then drifted about to other direction by electric-field compulsion, collect these electronics effectively, just can obtain the information of incoming particle, as energy, position, time etc.These a few class sensors are when work, radiation needs the metal electrode/P type of break-through sensor or N type doped layer to arrive radiation sensitive regions, and metal electrode layer, N type or P type doped layer do not produce useful signal and can consume the energy of certain incoming particle, are called as the sensor dead layer.The thickness of sensor dead layer has directly limited the energy resolution of sensor and the lower limit that energy is surveyed.
Therefore, the thickness that how to reduce the sensor dead layer becomes the key that improves semicoductor radiating sensor energy resolution, reduces the energy detection limit.The scheme energy resolution of prior art is low, energy detection limit height.
Summary of the invention
(1) technical problem that will solve
The technical problem to be solved in the present invention is: the energy resolution, the reduction energy detection limit that how to improve semicoductor radiating sensor (being also referred to as semiconductor radiation detector).
(2) summary of the invention
In order to solve the problems of the technologies described above, the invention provides a kind of semicoductor radiating sensor, comprise at least one radiosensitive unit, described radiosensitive unit comprises: first matrix, first columnar electrode and second columnar electrode;
Described first matrix comprises first surface and second surface;
Described first columnar electrode comprises first metal column and around the N type doped silicon of described first metal column;
Described second columnar electrode comprises second metal column and around the P type doped silicon of described second metal column;
Described first columnar electrode and described second columnar electrode are embedded in the described first matrix inside, and run through the first surface and the second surface of described first matrix;
Described second metal column is more than two, and is arranged in regular polygon; Described first columnar electrode is positioned at the geometric center of described regular polygon.
Wherein, described radiosensitive unit also comprises first pad on the end face that is positioned at described first columnar electrode and described second columnar electrode.
Wherein, described radiosensitive unit also comprises second matrix that engages with described first matrix;
Described second matrix comprises first surface and second surface;
Described second matrix comprises second pad on the signal processing circuit of described radiosensitive unit, the first surface that is positioned at described second matrix or the second surface, and described second pad is electrically connected with described signal processing circuit;
Second pad of described second matrix engages with first pad of described first matrix.
Preferably, the first pad bonding of second pad of described second matrix and described first matrix.
Wherein, described first matrix and/or second matrix are silicon substrates.
Wherein, described first metal column and/or second metal column are copper.
Wherein, described second columnar electrode contains orthohexagonal 6 second metal columns of formation.
Wherein, described at least one radiosensitive unit cell arrangement becomes array.
The present invention also provides a kind of manufacture method of above-mentioned semicoductor radiating sensor, may further comprise the steps:
S1, provide first matrix, on first matrix, make the first silicon through hole and the second silicon through hole;
S2, in the first silicon through hole of described first matrix and the second silicon through hole, make first columnar electrode and second columnar electrode respectively.
After step S2, also comprise step: S3, make first pad at the first surface of described first matrix.
After step S3, also comprise step: S4, second matrix is provided, make the signal processing that described signal processing circuit is carried out radiosensitive unit at second matrix surface, make second pad at described second matrix surface, second pad is connected signal processing circuit, with described first matrix and the second matrix bonding.
(3) beneficial effect
The present invention has following beneficial effect: the present invention adopts second columnar electrode of regular polygon and first columnar electrode at regular polygon center, make and suitably exhausting the regular polygon interior zone entirely under the back bias voltage, and formation gradient electric field, the columnar electrode surface is little, the sensitizing range part need not metal electrode and covers, and then can realize the sensor dead layer thickness (the thinnest several approximately nanometers of autoxidation layer thickness that reach) that approaches, less equivalent capacity, short signal drift process; Thereby can improve energy resolution, reduce the response time and reduce the energy detection limit.Best results when described regular polygon is regular hexagon.
Description of drawings
Fig. 1 a is the vertical view of a radiosensitive unit of semicoductor radiating sensor of the present invention;
Fig. 1 b is the profile along the A1A2 line of Fig. 1;
Fig. 2 is the schematic diagram of step S1 in the manufacture method of the present invention;
Fig. 3 a～3g is a schematic diagram of making columnar electrode;
Fig. 4 is the schematic diagram of step S3 in the manufacture method of the present invention;
Fig. 5 is the schematic diagram of step S4 in the manufacture method of the present invention;
Fig. 6 is the method flow diagram of embodiments of the invention three.
Wherein, first matrix (or claiming first wafer): 100; First columnar electrode 110; Second columnar electrode 120; The one TSV silicon through hole 111, the 2nd TSV silicon through hole 121; N type doped silicon 112; P type doped silicon 122; First metal column 113; Second metal column 123; First pad 114,124; Second matrix (or claiming second wafer): 200; Oxide layer: 300.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples are used to illustrate the present invention, but are not used for limiting the scope of the invention.
Embodiment one
As Fig. 1～shown in Figure 5, the invention provides a kind of semicoductor radiating sensor, contain at least 1 radiosensitive unit.Radiosensitive unit includes as shown in Figure 1: first matrix 100, first columnar electrode 110, second columnar electrode 120.
Described first matrix 100 contains first surface and second surface;
Described first columnar electrode 110 contains first metal column 113 and around the N type doped silicon 112 of first metal column;
Described second columnar electrode 120 contains second metal column 123 and around the P type doped silicon 122 of second metal column;
Described first columnar electrode 110 and described second columnar electrode 120 embed the first matrix inside, vertically run through described matrix first surface and second surface;
Described second columnar electrode 120 contains 6 metal columns, is positive 6 limit shapes and arranges; Described first columnar electrode 110 is positioned at the center of the described second positive 6 limit shapes that columnar electrode 120 constitutes, and overlooks effect as shown in Figure 1a, along the arbitrary center of circle radial section figure that crosses of positive 6 limit shapes shown in Fig. 1 b;
Under the operating state, first columnar electrode 110 and second columnar electrode 120 apply reverse biased, and positive 6 limit shape interior zones are exhausted entirely, drift field radially between first columnar electrode and second columnar electrode.Inspire electron-hole pair when radiation enters positive 6 limit shape interior zones (except that first columnar electrode), electronics and hole to meeting radially electric field arrive first columnar electrode and second columnar electrode respectively, form signal.
Described matrix is a silicon substrate, and resistivity is greater than 1000 Ω cm; Can also be other Semiconductor substrate;
First metal column of described first columnar electrode is a copper, is that phosphorus (P) mixes around the N type doped silicon of first metal column, also can be other element doping;
Second metal column of described second columnar electrode is a copper, is that boron (B) mixes around the P type doped silicon of second metal column, also can be other element doping.
Embodiment two
As Fig. 1～shown in Figure 5, the invention provides a kind of semicoductor radiating sensor, contain the signal processing circuit of at least 1 radiosensitive unit, radiosensitive unit, this signal processing circuit is a prior art.Radiosensitive unit includes as shown in Figure 5: first matrix 100, first columnar electrode 110, second columnar electrode 120, first pad 114 and 124, second matrix 200.
The structure of first matrix 100, first columnar electrode 110, second columnar electrode 120 is identical with embodiment one.
Described first pad 114 is positioned at an end of described first columnar electrode 110, and first pad 124 is positioned at described second columnar electrode, 120 1 ends;
Described second matrix 200 is positioned on described first matrix 100;
Described second matrix 200 contains the signal processing circuit and the second pad (not shown), and described second pad is electrically connected with signal processing circuit, and described second pad engages with described first pad, for example metal eutectic bonding, or welding;
Preferably, described second matrix is a silicon substrate, and resistivity is greater than 1000 Ω cm; Can also be other Semiconductor substrate.
Embodiment three
As Fig. 1～shown in Figure 5, the invention provides a kind of new manufacture method at above-mentioned semicoductor radiating sensor design, comprise step:
S1, provide first wafer 100, on wafer, make a TSV silicon through hole 111 and the 2nd TSV silicon through hole 121, as shown in Figure 2.The making of TSV silicon through hole is specific as follows: apply photoresist, photolithographic exposure develops and makes TSV silicon through hole mask; Photoresist is removed in the break-through of deep reaction ion (DRIE) etch silicon wafer.The method of dual surface lithography, hole break-through at two-sided quarter is also adopted in the making of TSV silicon through hole; Also can adopt additive method, as laser drilling etc.
S2, make first columnar electrode 110 and second columnar electrode 120 respectively at the TSV of described first wafer silicon through hole 111 and 121, as shown in Figure 3.Columnar electrode is made as follows in detail: 1, described first wafer of oxidation, and surface oxide layer (silicon dioxide) is labeled as 300, shown in Fig. 3 a; 2, apply photoresist at the first wafer positive and negative, exposure imaging exposes the 2nd TSV silicon through hole at the second columnar electrode place, seals a TSV silicon through hole 111 at first columnar electrode, 110 places, shown in Fig. 3 b; 3, corrode the silicon dioxide in the 2nd TSV silicon through hole 121 zones at second columnar electrode, 120 places that expose, comprise the silicon dioxide of surface, side, remove photoresist; Diffusing, doping boron (B) forms P type doped silicon 122, shown in Fig. 3 c on the 2nd TSV through-silicon via sidewall; 4, oxidation is shown in Fig. 3 d; 5, apply photoresist at the first wafer positive and negative, exposure imaging exposes the TSV silicon through hole 111 at first columnar electrode, 110 places, seals the 2nd TSV silicon through hole 121 at the second columnar electrode place, shown in Fig. 3 e; 6, corrode the silicon dioxide in a TSV silicon through hole 111 zones at first columnar electrode, 110 places that expose, comprise the silicon dioxide of surface, side, remove photoresist; Diffusing, doping phosphorus (P) forms N type doped silicon 112 on a TSV through-silicon via sidewall; Annealing activates then, shown in Fig. 3 f; 7, apply photoresist in the first wafer positive and negative, exposure exposes the second columnar electrode region, corrodes the silicon dioxide of the 2nd TSV silicon through hole 121 surfaces, second columnar electrode, 120 regions, sidewall; Remove photoresist, TSV silicon through hole 111 and 121 is filled in electro-coppering, removes the unnecessary silicon dioxide layer in surface, shown in Fig. 3 g; 8, filling copper electroplates, process is as follows: secondary wafer is provided, makes Seed Layer gold or copper, interim bonding secondary wafer and described first wafer, TSV silicon through hole 111 and TSV silicon through hole 121 are filled in bottom-up plating, form first metal column 113 and second metal column 123.The removal of surface silica dioxide layer can be adopted the BHF corrosion, also can adopt the conventional burn into lithographic method of other semiconductors.9, alloy annealing under 300 degrees centigrade of-600 degrees centigrade of nitrogen hydrogen atmospheres, first metal column 113 forms ohmic contact with N type doped silicon 112, second metal column 123 forms ohmic contact with P type doped silicon 122, finally is made into first columnar electrode and second columnar electrode.
Embodiment four
The invention provides a kind of manufacture method of making the semicoductor radiating sensor, comprising:
Step S1 and the S2 identical with embodiment three;
S3, make first pad 114,124 at the first surface of described first wafer, as shown in Figure 4.Pad can be made of physical vapour deposition (PVD), also can make of electrochemical deposition method.Described first pad can be that integrated circuit is made conventional pad in field or soldered ball, as aluminum pad, and soldering ball etc.; Also can be the dimpling point soldered ball (Microbump) of microbonding dish or 3D encapsulation field, as copper tin dimpling point.
Embodiment five
Step S1～the S3 identical with embodiment four;
S4, provide second wafer 200, make the signal processing that integrated circuit (IC) (being described signal processing circuit) is carried out radiosensitive unit, make second pad, second pad is connected integrated circuit (IC) at described second crystal column surface at second crystal column surface.Described first wafer and described second wafer are passed through the pad bonding, as shown in Figure 5.The signal processing circuit of described second wafer 200 and described second pad can be on the same surfaces of described second wafer, also can be on two relative surfaces of described wafer.Under the same surface condition, can adopt the re-wiring layer interconnection; Under apparent surface's situation, can adopt the TSV interconnecting silicon through holes.Wherein, bonding is meant that atom is associated in the process that forms molecule together in the mode of " key ".The mode of bonding comprises metal bonding, crystal bonding etc.
Above execution mode only is used to illustrate the present invention; and be not limitation of the present invention; the those of ordinary skill in relevant technologies field; under the situation that does not break away from the spirit and scope of the present invention; can also make various variations and modification; therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (11)
1. a semicoductor radiating sensor is characterized in that, comprises at least one radiosensitive unit, and described radiosensitive unit comprises: first matrix, first columnar electrode and second columnar electrode;
Described first matrix comprises first surface and second surface;
Described first columnar electrode comprises first metal column and around the N type doped silicon of described first metal column;
Described second columnar electrode comprises second metal column and around the P type doped silicon of described second metal column;
Described first columnar electrode and described second columnar electrode are embedded in the described first matrix inside, and run through the first surface and the second surface of described first matrix;
Described second metal column is more than two, and is arranged in regular polygon; Described first columnar electrode is positioned at the geometric center of described regular polygon.
2. sensor as claimed in claim 1 is characterized in that, described radiosensitive unit also comprises first pad on the end face that is positioned at described first columnar electrode and described second columnar electrode.
3. sensor as claimed in claim 2 is characterized in that, described radiosensitive unit also comprises second matrix that engages with described first matrix;
Described second matrix comprises first surface and second surface;
Described second matrix comprises second pad on the signal processing circuit of described radiosensitive unit, the first surface that is positioned at described second matrix or the second surface, and described second pad is electrically connected with described signal processing circuit;
Second pad of described second matrix engages with first pad of described first matrix.
4. sensor as claimed in claim 3 is characterized in that, the first pad bonding of second pad of described second matrix and described first matrix.
5. sensor as claimed in claim 3 is characterized in that, described first matrix and/or second matrix are silicon substrates.
6. sensor as claimed in claim 1 is characterized in that, described first metal column and/or second metal column are copper.
7. sensor as claimed in claim 1 is characterized in that, described second columnar electrode contains orthohexagonal 6 second metal columns of formation.
8. sensor as claimed in claim 1 is characterized in that, described at least one radiosensitive unit cell arrangement becomes array.
9. the manufacture method of each semicoductor radiating sensor of claim 1～8 is characterized in that, may further comprise the steps:
S1, provide first matrix, on first matrix, make the first silicon through hole and the second silicon through hole;
S2, in the first silicon through hole of described first matrix and the second silicon through hole, make first columnar electrode and second columnar electrode respectively.
10. method as claimed in claim 9 is characterized in that, also comprises step: S3 after step S2, makes first pad at the first surface of described first matrix.
11. method as claimed in claim 10, it is characterized in that, after step S3, also comprise step: S4, second matrix is provided, make the signal processing that described signal processing circuit is carried out radiosensitive unit at second matrix surface, make second pad at described second matrix surface, second pad is connected signal processing circuit, with described first matrix and the second matrix bonding.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412228A (en) * | 2011-10-31 | 2012-04-11 | 中国科学院微电子研究所 | Coaxial through-silicon via interconnected structure and fabrication method thereof |
| CN103367307A (en) * | 2012-03-27 | 2013-10-23 | 南亚科技股份有限公司 | Through-silicon via and forming method thereof |
| CN103787264A (en) * | 2014-01-21 | 2014-05-14 | 华进半导体封装先导技术研发中心有限公司 | Manufacturing method applied to high-speed broadband optical interconnection TSV device and device thereof |
| CN104867905A (en) * | 2015-03-26 | 2015-08-26 | 北京大学 | Through-silicon-via-contained semiconductor structure and manufacturing method thereof |
| CN106415853A (en) * | 2014-06-27 | 2017-02-15 | 英特尔公司 | Through silicon via based photovoltaic cell |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6768180B2 (en) * | 2002-04-04 | 2004-07-27 | C. Andre T. Salama | Superjunction LDMOST using an insulator substrate for power integrated circuits |
| US20060071295A1 (en) * | 2004-09-27 | 2006-04-06 | Rockwell Scientific Licensing, Llc. | High voltage FET switch with conductivity modulation |
| US20090039527A1 (en) * | 2007-08-06 | 2009-02-12 | Siliconware Precision Industries Co., Ltd. | Sensor-type package and method for fabricating the same |
| CN101441112A (en) * | 2008-12-18 | 2009-05-27 | 中国科学院微电子研究所 | Non-refrigeration infrared detector array based on monocrystal silicon PN junction and preparing method thereof |
| US20100237386A1 (en) * | 2009-03-20 | 2010-09-23 | Industrial Technology Research Institute | Electrostatic discharge structure for 3-dimensional integrated circuit through-silicon via device |
| CN102308392A (en) * | 2009-02-18 | 2012-01-04 | 高通股份有限公司 | The improved power conversion efficiency (pce) of silicon through hole is worn in use |
-
2011
- 2011-06-01 CN CN2011101457010A patent/CN102214723B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6768180B2 (en) * | 2002-04-04 | 2004-07-27 | C. Andre T. Salama | Superjunction LDMOST using an insulator substrate for power integrated circuits |
| US20060071295A1 (en) * | 2004-09-27 | 2006-04-06 | Rockwell Scientific Licensing, Llc. | High voltage FET switch with conductivity modulation |
| US20090039527A1 (en) * | 2007-08-06 | 2009-02-12 | Siliconware Precision Industries Co., Ltd. | Sensor-type package and method for fabricating the same |
| CN101441112A (en) * | 2008-12-18 | 2009-05-27 | 中国科学院微电子研究所 | Non-refrigeration infrared detector array based on monocrystal silicon PN junction and preparing method thereof |
| CN102308392A (en) * | 2009-02-18 | 2012-01-04 | 高通股份有限公司 | The improved power conversion efficiency (pce) of silicon through hole is worn in use |
| US20100237386A1 (en) * | 2009-03-20 | 2010-09-23 | Industrial Technology Research Institute | Electrostatic discharge structure for 3-dimensional integrated circuit through-silicon via device |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412228A (en) * | 2011-10-31 | 2012-04-11 | 中国科学院微电子研究所 | Coaxial through-silicon via interconnected structure and fabrication method thereof |
| CN102412228B (en) * | 2011-10-31 | 2014-04-02 | 中国科学院微电子研究所 | Coaxial through-silicon via interconnected structure and fabrication method thereof |
| CN103367307A (en) * | 2012-03-27 | 2013-10-23 | 南亚科技股份有限公司 | Through-silicon via and forming method thereof |
| CN103367307B (en) * | 2012-03-27 | 2016-03-23 | 南亚科技股份有限公司 | Wear silicon through hole and its formation method |
| CN103787264A (en) * | 2014-01-21 | 2014-05-14 | 华进半导体封装先导技术研发中心有限公司 | Manufacturing method applied to high-speed broadband optical interconnection TSV device and device thereof |
| CN103787264B (en) * | 2014-01-21 | 2016-06-15 | 华进半导体封装先导技术研发中心有限公司 | The manufacture method of a kind of silicon via devices being applied to high-speed wideband light network and device thereof |
| CN106415853A (en) * | 2014-06-27 | 2017-02-15 | 英特尔公司 | Through silicon via based photovoltaic cell |
| CN106415853B (en) * | 2014-06-27 | 2018-12-11 | 英特尔公司 | Photovoltaic cell based on through silicon via |
| US10158034B2 (en) | 2014-06-27 | 2018-12-18 | Intel Corporation | Through silicon via based photovoltaic cell |
| CN104867905A (en) * | 2015-03-26 | 2015-08-26 | 北京大学 | Through-silicon-via-contained semiconductor structure and manufacturing method thereof |
| CN104867905B (en) * | 2015-03-26 | 2017-10-10 | 北京大学 | A kind of semiconductor structure comprising silicon hole and its manufacture method |
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Inventor after: Ma Shenglin Inventor after: Zhu Wenhui Inventor after: Sun Xin Inventor after: Jin Yufeng Inventor after: Chen Jing Inventor after: Jiu Min Inventor before: Ma Shenglin |
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