CN106256020B - 功率分配网络(pdn)中交错的功率结构 - Google Patents

功率分配网络(pdn)中交错的功率结构 Download PDF

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Publication number
CN106256020B
CN106256020B CN201580022321.4A CN201580022321A CN106256020B CN 106256020 B CN106256020 B CN 106256020B CN 201580022321 A CN201580022321 A CN 201580022321A CN 106256020 B CN106256020 B CN 106256020B
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China
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metal layer
regions
network list
integrated device
region
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Chinese (zh)
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CN106256020A (zh
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R·D·莱恩
Y·李
C·D·裴恩特
R·K·藏
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
    • H05K1/0224—Patterned shielding planes, ground planes or power planes
    • H05K1/0225—Single or multiple openings in a shielding, ground or power plane
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0236—Electromagnetic band-gap structures
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0091—Apparatus for coating printed circuits using liquid non-metallic coating compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/0698—Local interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/427—Power or ground buses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/0929—Conductive planes
    • H05K2201/09309—Core having two or more power planes; Capacitive laminate of two power planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Geometry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Structure Of Printed Boards (AREA)
CN201580022321.4A 2014-04-29 2015-04-28 功率分配网络(pdn)中交错的功率结构 Active CN106256020B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/264,836 US10231324B2 (en) 2014-04-29 2014-04-29 Staggered power structure in a power distribution network (PDN)
US14/264,836 2014-04-29
PCT/US2015/028061 WO2015168160A1 (en) 2014-04-29 2015-04-28 Staggered power structure in a power distribution network (pdn)

Publications (2)

Publication Number Publication Date
CN106256020A CN106256020A (zh) 2016-12-21
CN106256020B true CN106256020B (zh) 2019-03-22

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Family Applications (1)

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CN201580022321.4A Active CN106256020B (zh) 2014-04-29 2015-04-28 功率分配网络(pdn)中交错的功率结构

Country Status (7)

Country Link
US (1) US10231324B2 (https=)
EP (1) EP3138127B1 (https=)
JP (1) JP2017515305A (https=)
KR (1) KR20160146751A (https=)
CN (1) CN106256020B (https=)
BR (1) BR112016024898A2 (https=)
WO (1) WO2015168160A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101933408B1 (ko) * 2015-11-10 2018-12-28 삼성전기 주식회사 전자부품 패키지 및 이를 포함하는 전자기기
KR102410661B1 (ko) 2015-11-13 2022-06-20 삼성디스플레이 주식회사 터치 패널 및 이를 포함하는 표시 장치
IT202000029210A1 (it) * 2020-12-01 2022-06-01 St Microelectronics Srl Dispositivo a semiconduttore e corrispondente procedimento
CN113741728B (zh) * 2021-08-19 2023-11-28 武汉华星光电半导体显示技术有限公司 触控面板和移动终端

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US6484302B1 (en) * 2000-07-11 2002-11-19 Hewlett-Packard Company Auto-contactor system and method for generating variable size contacts
US20060046353A1 (en) * 2004-08-26 2006-03-02 Vikram Shrowty Optimizing dynamic power characteristics of an integrated circuit chip
CN101877342A (zh) * 2009-04-28 2010-11-03 国际商业机器公司 电路布置以及设计方法
US20120313227A1 (en) * 2011-03-06 2012-12-13 Zvi Or-Bach Semiconductor device and structure for heat removal
CN103125020A (zh) * 2010-09-29 2013-05-29 意法爱立信有限公司 具有集成去耦电容的电源布线

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JP3432963B2 (ja) 1995-06-15 2003-08-04 沖電気工業株式会社 半導体集積回路
US6495770B2 (en) * 2000-12-04 2002-12-17 Intel Corporation Electronic assembly providing shunting of electrical current
US6609242B1 (en) 2001-07-20 2003-08-19 Hewlett-Packard Development Company, L.P. Automated creation of power distribution grids for tiled cell arrays in integrated circuit designs
US6891260B1 (en) * 2002-06-06 2005-05-10 Lsi Logic Corporation Integrated circuit package substrate with high density routing mechanism
US6978433B1 (en) 2002-09-16 2005-12-20 Xilinx, Inc. Method and apparatus for placement of vias
US7089522B2 (en) 2003-06-11 2006-08-08 Chartered Semiconductor Manufacturing, Ltd. Device, design and method for a slot in a conductive area
US7294791B2 (en) * 2004-09-29 2007-11-13 Endicott Interconnect Technologies, Inc. Circuitized substrate with improved impedance control circuitry, method of making same, electrical assembly and information handling system utilizing same
US8159413B2 (en) * 2006-11-01 2012-04-17 Agency For Science, Technology And Research Double-stacked EBG structure
JP5433972B2 (ja) * 2008-04-21 2014-03-05 日本電気株式会社 半導体装置及びその製造方法
US8230375B2 (en) 2008-09-14 2012-07-24 Raminda Udaya Madurawe Automated metal pattern generation for integrated circuits
US8106504B2 (en) * 2008-09-25 2012-01-31 King Dragon International Inc. Stacking package structure with chip embedded inside and die having through silicon via and method of the same
JP5581795B2 (ja) 2010-05-07 2014-09-03 ルネサスエレクトロニクス株式会社 スタンダードセル、スタンダードセルを備えた半導体装置、およびスタンダードセルの配置配線方法
US8749322B2 (en) * 2011-09-02 2014-06-10 National Taiwan University Multilayer circuit board structure and circuitry thereof
US20170017744A1 (en) * 2015-07-15 2017-01-19 E-System Design, Inc. Modeling of Power Distribution Networks for Path Finding

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Publication number Priority date Publication date Assignee Title
US6484302B1 (en) * 2000-07-11 2002-11-19 Hewlett-Packard Company Auto-contactor system and method for generating variable size contacts
US20060046353A1 (en) * 2004-08-26 2006-03-02 Vikram Shrowty Optimizing dynamic power characteristics of an integrated circuit chip
CN101877342A (zh) * 2009-04-28 2010-11-03 国际商业机器公司 电路布置以及设计方法
CN103125020A (zh) * 2010-09-29 2013-05-29 意法爱立信有限公司 具有集成去耦电容的电源布线
US20120313227A1 (en) * 2011-03-06 2012-12-13 Zvi Or-Bach Semiconductor device and structure for heat removal

Also Published As

Publication number Publication date
EP3138127B1 (en) 2023-01-04
WO2015168160A1 (en) 2015-11-05
EP3138127A1 (en) 2017-03-08
US20150313006A1 (en) 2015-10-29
US10231324B2 (en) 2019-03-12
JP2017515305A (ja) 2017-06-08
CN106256020A (zh) 2016-12-21
BR112016024898A2 (pt) 2017-08-15
KR20160146751A (ko) 2016-12-21

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