BR112016024898A2 - estrutura de potência escalonada em uma rede de distribuição de potência (pdn) - Google Patents
estrutura de potência escalonada em uma rede de distribuição de potência (pdn)Info
- Publication number
- BR112016024898A2 BR112016024898A2 BR112016024898A BR112016024898A BR112016024898A2 BR 112016024898 A2 BR112016024898 A2 BR 112016024898A2 BR 112016024898 A BR112016024898 A BR 112016024898A BR 112016024898 A BR112016024898 A BR 112016024898A BR 112016024898 A2 BR112016024898 A2 BR 112016024898A2
- Authority
- BR
- Brazil
- Prior art keywords
- pdn
- regions
- metal layer
- distribution network
- integrated device
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5286—Arrangements of power or ground buses
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
- H05K1/0224—Patterned shielding planes, ground planes or power planes
- H05K1/0225—Single or multiple openings in a shielding, ground or power plane
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0236—Electromagnetic band-gap structures
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0091—Apparatus for coating printed circuits using liquid non-metallic coating compositions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/0929—Conductive planes
- H05K2201/09309—Core having two or more power planes; Capacitive laminate of two power planes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Geometry (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Structure Of Printed Boards (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
alguns recursos inovadores pertencem a um dispositivo integrado que inclui uma primeira camada de metal e uma segunda camada de metal. a primeira camada de metal inclui um primeiro conjunto de regiões. o primeiro conjunto de regiões inclui uma primeira estrutura de netlist para uma rede de distribuição de potência (pdn) do dispositivo integrado. a segunda camada de metal inclui um segundo conjunto de regiões. o segundo conjunto de regiões inclui uma segunda estrutura de netlist da pdn do dispositivo integrado. em algumas implantações, a segunda camada de metal inclui adicionalmente um terceiro conjunto de regiões que compreende a primeira estrutura de netlist para a pdn do dispositivo integrado. em algumas implantações, a primeira camada de metal inclui um terceiro conjunto de regiões que inclui uma terceira estrutura de netlist para a pdn do dispositivo integrado. o terceiro conjunto de regiões não é sobreposto ao primeiro conjunto de regiões da primeira camada de metal.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/264,836 US10231324B2 (en) | 2014-04-29 | 2014-04-29 | Staggered power structure in a power distribution network (PDN) |
PCT/US2015/028061 WO2015168160A1 (en) | 2014-04-29 | 2015-04-28 | Staggered power structure in a power distribution network (pdn) |
Publications (1)
Publication Number | Publication Date |
---|---|
BR112016024898A2 true BR112016024898A2 (pt) | 2017-08-15 |
Family
ID=53175170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112016024898A BR112016024898A2 (pt) | 2014-04-29 | 2015-04-28 | estrutura de potência escalonada em uma rede de distribuição de potência (pdn) |
Country Status (7)
Country | Link |
---|---|
US (1) | US10231324B2 (pt) |
EP (1) | EP3138127B1 (pt) |
JP (1) | JP2017515305A (pt) |
KR (1) | KR20160146751A (pt) |
CN (1) | CN106256020B (pt) |
BR (1) | BR112016024898A2 (pt) |
WO (1) | WO2015168160A1 (pt) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102410661B1 (ko) | 2015-11-13 | 2022-06-20 | 삼성디스플레이 주식회사 | 터치 패널 및 이를 포함하는 표시 장치 |
IT202000029210A1 (it) | 2020-12-01 | 2022-06-01 | St Microelectronics Srl | Dispositivo a semiconduttore e corrispondente procedimento |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3432963B2 (ja) | 1995-06-15 | 2003-08-04 | 沖電気工業株式会社 | 半導体集積回路 |
US6484302B1 (en) | 2000-07-11 | 2002-11-19 | Hewlett-Packard Company | Auto-contactor system and method for generating variable size contacts |
US6495770B2 (en) * | 2000-12-04 | 2002-12-17 | Intel Corporation | Electronic assembly providing shunting of electrical current |
US6609242B1 (en) | 2001-07-20 | 2003-08-19 | Hewlett-Packard Development Company, L.P. | Automated creation of power distribution grids for tiled cell arrays in integrated circuit designs |
US6891260B1 (en) * | 2002-06-06 | 2005-05-10 | Lsi Logic Corporation | Integrated circuit package substrate with high density routing mechanism |
US6978433B1 (en) | 2002-09-16 | 2005-12-20 | Xilinx, Inc. | Method and apparatus for placement of vias |
US7089522B2 (en) | 2003-06-11 | 2006-08-08 | Chartered Semiconductor Manufacturing, Ltd. | Device, design and method for a slot in a conductive area |
US7237218B2 (en) * | 2004-08-26 | 2007-06-26 | Lsi Corporation | Optimizing dynamic power characteristics of an integrated circuit chip |
US7294791B2 (en) * | 2004-09-29 | 2007-11-13 | Endicott Interconnect Technologies, Inc. | Circuitized substrate with improved impedance control circuitry, method of making same, electrical assembly and information handling system utilizing same |
KR101265245B1 (ko) * | 2006-11-01 | 2013-05-16 | 에이전시 포 사이언스, 테크놀로지 앤드 리서치 | 이중적층형 ebg 구조체 |
JP5433972B2 (ja) * | 2008-04-21 | 2014-03-05 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US8230375B2 (en) | 2008-09-14 | 2012-07-24 | Raminda Udaya Madurawe | Automated metal pattern generation for integrated circuits |
US8106504B2 (en) * | 2008-09-25 | 2012-01-31 | King Dragon International Inc. | Stacking package structure with chip embedded inside and die having through silicon via and method of the same |
US8330489B2 (en) | 2009-04-28 | 2012-12-11 | International Business Machines Corporation | Universal inter-layer interconnect for multi-layer semiconductor stacks |
JP5581795B2 (ja) | 2010-05-07 | 2014-09-03 | ルネサスエレクトロニクス株式会社 | スタンダードセル、スタンダードセルを備えた半導体装置、およびスタンダードセルの配置配線方法 |
WO2012041889A1 (en) * | 2010-09-29 | 2012-04-05 | St-Ericsson Sa | Power routing with integrated decoupling capacitance |
US8975670B2 (en) * | 2011-03-06 | 2015-03-10 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
US8749322B2 (en) * | 2011-09-02 | 2014-06-10 | National Taiwan University | Multilayer circuit board structure and circuitry thereof |
US20170017744A1 (en) * | 2015-07-15 | 2017-01-19 | E-System Design, Inc. | Modeling of Power Distribution Networks for Path Finding |
-
2014
- 2014-04-29 US US14/264,836 patent/US10231324B2/en active Active
-
2015
- 2015-04-28 WO PCT/US2015/028061 patent/WO2015168160A1/en active Application Filing
- 2015-04-28 CN CN201580022321.4A patent/CN106256020B/zh active Active
- 2015-04-28 BR BR112016024898A patent/BR112016024898A2/pt not_active IP Right Cessation
- 2015-04-28 EP EP15721960.1A patent/EP3138127B1/en active Active
- 2015-04-28 KR KR1020167029953A patent/KR20160146751A/ko unknown
- 2015-04-28 JP JP2016563164A patent/JP2017515305A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP3138127B1 (en) | 2023-01-04 |
JP2017515305A (ja) | 2017-06-08 |
CN106256020A (zh) | 2016-12-21 |
US10231324B2 (en) | 2019-03-12 |
KR20160146751A (ko) | 2016-12-21 |
WO2015168160A1 (en) | 2015-11-05 |
EP3138127A1 (en) | 2017-03-08 |
US20150313006A1 (en) | 2015-10-29 |
CN106256020B (zh) | 2019-03-22 |
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