CN106252490B - 半导体发光装置 - Google Patents

半导体发光装置 Download PDF

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Publication number
CN106252490B
CN106252490B CN201610132725.5A CN201610132725A CN106252490B CN 106252490 B CN106252490 B CN 106252490B CN 201610132725 A CN201610132725 A CN 201610132725A CN 106252490 B CN106252490 B CN 106252490B
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CN
China
Prior art keywords
layer
light
semiconductor layer
illuminator
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201610132725.5A
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English (en)
Chinese (zh)
Other versions
CN106252490A (zh
Inventor
胜野弘
泽野正和
宫部主之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to CN201910525848.9A priority Critical patent/CN110518103B/zh
Publication of CN106252490A publication Critical patent/CN106252490A/zh
Application granted granted Critical
Publication of CN106252490B publication Critical patent/CN106252490B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Led Devices (AREA)
CN201610132725.5A 2015-06-15 2016-03-09 半导体发光装置 Expired - Fee Related CN106252490B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910525848.9A CN110518103B (zh) 2015-06-15 2016-03-09 半导体发光装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-120275 2015-06-15
JP2015120275A JP2017005191A (ja) 2015-06-15 2015-06-15 半導体発光装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201910525848.9A Division CN110518103B (zh) 2015-06-15 2016-03-09 半导体发光装置

Publications (2)

Publication Number Publication Date
CN106252490A CN106252490A (zh) 2016-12-21
CN106252490B true CN106252490B (zh) 2019-07-09

Family

ID=57517437

Family Applications (2)

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CN201610132725.5A Expired - Fee Related CN106252490B (zh) 2015-06-15 2016-03-09 半导体发光装置
CN201910525848.9A Expired - Fee Related CN110518103B (zh) 2015-06-15 2016-03-09 半导体发光装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201910525848.9A Expired - Fee Related CN110518103B (zh) 2015-06-15 2016-03-09 半导体发光装置

Country Status (4)

Country Link
US (3) US9911899B2 (enExample)
JP (1) JP2017005191A (enExample)
CN (2) CN106252490B (enExample)
TW (1) TWI613837B (enExample)

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* Cited by examiner, † Cited by third party
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KR102353570B1 (ko) * 2015-08-24 2022-01-20 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 이를 구비한 발광 소자 패키지
KR102656815B1 (ko) * 2017-12-27 2024-04-15 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
KR20190127218A (ko) * 2018-05-04 2019-11-13 엘지이노텍 주식회사 반도체 소자 패키지 및 이를 포함하는 광조사장치
KR102653956B1 (ko) * 2018-08-21 2024-04-02 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
KR102575569B1 (ko) * 2018-08-13 2023-09-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
KR102575580B1 (ko) * 2018-08-21 2023-09-06 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
JP7096489B2 (ja) * 2018-09-20 2022-07-06 日亜化学工業株式会社 半導体素子の製造方法
KR102704081B1 (ko) * 2019-01-09 2024-09-09 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1983614A (zh) * 2005-10-05 2007-06-20 株式会社东芝 半导体发光装置
CN103119735A (zh) * 2010-09-24 2013-05-22 首尔半导体株式会社 晶片级发光二极管封装件及其制造方法
CN103840040A (zh) * 2012-11-22 2014-06-04 株式会社东芝 半导体发光器件及其制造方法

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Publication number Priority date Publication date Assignee Title
JPH11214749A (ja) 1998-01-29 1999-08-06 Sanyo Electric Co Ltd 半導体発光装置
JPH11354845A (ja) 1998-06-10 1999-12-24 Matsushita Electron Corp ＧａＮ系化合物半導体発光素子
US7679097B2 (en) 2004-10-21 2010-03-16 Nichia Corporation Semiconductor light emitting device and method for manufacturing the same
JP4980615B2 (ja) 2005-02-08 2012-07-18 ローム株式会社 半導体発光素子およびその製法
US7842963B2 (en) * 2006-10-18 2010-11-30 Koninklijke Philips Electronics N.V. Electrical contacts for a semiconductor light emitting apparatus
US8008683B2 (en) 2008-10-22 2011-08-30 Samsung Led Co., Ltd. Semiconductor light emitting device
JP5246199B2 (ja) * 2010-03-31 2013-07-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
JP5304563B2 (ja) * 2009-09-15 2013-10-02 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
US8471288B2 (en) 2009-09-15 2013-06-25 Toyoda Gosei Co., Ltd. Group III nitride semiconductor light-emitting device including an auxiliary electrode in contact with a back surface of an n-type layer
JP2011198997A (ja) * 2010-03-19 2011-10-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
JP2011071444A (ja) 2009-09-28 2011-04-07 Toyoda Gosei Co Ltd 発光素子
US9070851B2 (en) * 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
JP5628064B2 (ja) * 2011-02-14 2014-11-19 スタンレー電気株式会社 光半導体素子
JP5050109B2 (ja) * 2011-03-14 2012-10-17 株式会社東芝 半導体発光素子
JP5740350B2 (ja) * 2012-05-31 2015-06-24 株式会社東芝 半導体発光素子
EP2722889B1 (en) * 2012-10-18 2018-03-21 LG Innotek Co., Ltd. Light emitting diode with improved efficiency though current spreading
JP2014120669A (ja) * 2012-12-18 2014-06-30 Toshiba Corp 半導体発光素子
JP6287317B2 (ja) * 2013-02-28 2018-03-07 日亜化学工業株式会社 半導体発光素子
JP5788046B2 (ja) * 2014-04-03 2015-09-30 株式会社東芝 半導体発光素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1983614A (zh) * 2005-10-05 2007-06-20 株式会社东芝 半导体发光装置
CN103119735A (zh) * 2010-09-24 2013-05-22 首尔半导体株式会社 晶片级发光二极管封装件及其制造方法
CN103840040A (zh) * 2012-11-22 2014-06-04 株式会社东芝 半导体发光器件及其制造方法

Also Published As

Publication number Publication date
US20180145215A1 (en) 2018-05-24
CN106252490A (zh) 2016-12-21
TWI613837B (zh) 2018-02-01
US20190051795A1 (en) 2019-02-14
US9911899B2 (en) 2018-03-06
CN110518103A (zh) 2019-11-29
US10403790B2 (en) 2019-09-03
US20160365481A1 (en) 2016-12-15
JP2017005191A (ja) 2017-01-05
TW201644067A (zh) 2016-12-16
US10128408B2 (en) 2018-11-13
CN110518103B (zh) 2022-10-21

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Effective date of registration: 20180105

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Applicant before: Toshiba Corp.

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Granted publication date: 20190709