CN106252198A - 晶片的加工方法 - Google Patents
晶片的加工方法 Download PDFInfo
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Abstract
提供晶片的加工方法,在磨削后,将用于在晶片的正面上装配保护板以便在对晶片的背面进行磨削时保护器件的接合材料从晶片的正面可靠地去除。晶片的加工方法包含如下的工序:水溶性树脂包覆工序,在晶片的正面上包覆水溶性的液状树脂而形成薄膜;保护板固定工序,在对晶片的正面进行保护的保护板与薄膜之间夹设接合材料而将晶片固定于保护板;背面磨削工序,利用卡盘工作台对固定了晶片的保护板侧进行保持,对晶片的背面进行磨削而形成为规定的厚度;保护板剥离工序,将接合材料与固定了晶片的保护板一同剥离;以及接合材料去除工序,对晶片的正面上残留的接合材料提供水,将薄膜与接合材料一同去除。
Description
技术领域
本发明涉及晶片的加工方法,该晶片在正面上呈格子状形成有多条分割预定线,并且在由该多条分割预定线划分出的多个区域中形成有器件。
背景技术
例如,在半导体器件制造工艺中,在作为大致圆板形状的晶片的正面上由呈格子状形成的分割预定线划分的多个区域中形成IC、LSI等器件,沿着分割预定线对形成有该器件的各区域进行分割,由此制造出一个个的器件芯片。另外,作为晶片,通常在被分割成各个器件芯片之前通过磨削装置对背面进行磨削而形成为规定的厚度。
磨削装置具有:卡盘工作台,其具有对晶片进行保持的保持面;磨削构件,其具有对保持在该卡盘工作台上的晶片的上表面进行磨削的磨轮;以及磨削进给构件,其使该磨削构件在与被加工物保持构件的保持面垂直的方向上移动,将为了保护器件而通过蜡等接合材料粘接在晶片的正面上的保护部件侧保持在卡盘工作台的保持面上,通过磨削构件对晶片的背面进行磨削而形成为规定的厚度(例如,参照专利文献1、2、3)。
专利文献1:日本特开平10-50642号公报
专利文献2:日本特开2010-219461号公报
专利文献3:日本特开2012-160515号公报
但是,当通过蜡等接合材料将保护板粘接于晶片的正面时,存在如下问题:当在对背面进行了磨削之后从晶片的正面将接合材料与保护板一同去除时,接合材料的一部分稍微残留于晶片的正面而使器件的品质降低。接合材料残留于晶片的正面的现象在设置于器件的电极由突出50~200μm的凸块形成的情况下大量产生。
发明内容
本发明是鉴于上述情况而完成的,其主要的技术课题在于提供一种晶片的加工方法,在磨削后,将用于在晶片的正面上装配保护板以便在对晶片的背面进行磨削时保护器件的接合材料从晶片的正面可靠地去除。
根据本发明,提供一种晶片的加工方法,对晶片进行加工,该晶片在正面上呈格子状形成有多条分割预定线,并且在由该多条分割预定线划分的多个区域中形成有器件,该晶片的加工方法的特征在于,具有如下的工序:水溶性树脂包覆工序,在晶片的正面上包覆水溶性的液状树脂而形成薄膜;保护板固定工序,在对晶片的正面进行保护的保护板与该薄膜之间夹设接合材料而将晶片固定于保护板;背面磨削工序,利用卡盘工作台对固定了晶片的该保护板侧进行保持,对晶片的背面进行磨削而形成为规定的厚度;保护板剥离工序,在实施了该背面磨削工序之后,将该接合材料与固定了晶片的该保护板一同剥离;以及接合材料去除工序,对实施了该保护板剥离工序的晶片的正面上残留的该接合材料提供水,将该薄膜与该接合材料一同去除。
优选晶片的加工方法还包含切削槽形成工序,在实施上述水溶性树脂包覆工序之前,从晶片的正面侧沿着分割预定线形成相当于器件的完工厚度的切削槽,在上述背面磨削工序中,使切削槽露出于晶片的背面而将晶片分割成一个个的器件。
优选晶片的加工方法还包含改质层形成工序,将对于晶片具有透过性的波长的激光光线的聚光点定位在晶片的内部而沿着分割预定线进行照射,在晶片的内部沿着分割预定线形成作为分割起点的改质层,在上述背面磨削工序中,沿着形成有作为分割起点的改质层的分割预定线将晶片分割成一个个的器件芯片。
在本发明中,由于包含接合材料去除工序,对实施了保护板剥离工序的晶片的正面上残留的接合材料提供水,将薄膜与接合材料一同去除,因此即使在实施保护板剥离工序时在晶片的正面上残留接合材料,也能够在接合材料去除工序中通过水将包覆在晶片的正面上的由水溶性树脂构成的薄膜去除从而将所残留的接合材料也去除,不会使器件芯片的品质降低。
附图说明
图1是半导体晶片的立体图。
图2的(a)~(c)是水溶性树脂包覆工序的说明图。
图3是薄膜固化工序的说明图。
图4的(a)、(b)是保护板固定工序的说明图。
图5是接合层固化工序的说明图。
图6的(a)、(b)是背面磨削工序的说明图。
图7的(a)、(b)是保护板剥离工序的说明图。
图8的(a)、(b)是接合材料去除工序的说明图。
图9的(a)、(b)是第2实施方式的切削槽形成工序的说明图。
图10的(a)、(b)是第2实施方式的背面磨削工序的说明图。
图11的(a)~(c)是第3实施方式的改质层形成工序的说明图。
图12的(a)、(b)是第3实施方式的背面磨削工序的说明图。
图13的(a)、(b)是第2实施方式和第3实施方式的保护板剥离工序的说明图。
图14的(a)~(c)是第2实施方式和第3实施方式的接合材料去除工序的说明图。
标号说明
2:半导体晶片;21:分割预定线;22:器件;3:树脂膜形成装置;31:旋转工作台;32:液状树脂供给喷嘴;300:薄膜;4:紫外线照射器;5:接合材料;50:接合层;6:保护板;7:磨削装置;71:磨削装置的卡盘工作台;72:磨削构件;724:磨轮;8:清洗装置;82:清洗水供给喷嘴;9:切削装置;91:切削装置的卡盘工作台;92:切削构件;923:切削刀具;10:激光加工装置;11:激光加工装置的卡盘工作台;12:激光光线照射构件;122:聚光器;F:环状的框架;T:划片带。
具体实施方式
以下,参照附图详细地说明本发明的晶片的加工方法的优选的实施方式。
图1中示出根据本发明加工的半导体晶片的立体图。图1所示的半导体晶片2由厚度为例如600μm的硅晶片构成,在正面2a上呈格子状形成有多条分割预定线21,并且在由该多条分割预定线21划分出的多个区域中形成有IC、LSI等器件22。以下,对于对该半导体晶片2的背面进行磨削而形成为规定的厚度的晶片的加工方法进行说明。被加工物不限于半导体晶片,也包含光器件晶片等其他的晶片。
首先,实施水溶性树脂包覆工序,在上述的半导体晶片2的正面2a上包覆水溶性的液状树脂而形成薄膜。
使用图2的(a)和(b)所示的树脂膜形成装置3来实施该水溶性树脂包覆工序。图2的(a)和(b)所示的树脂膜形成装置3具有:旋转工作台31,其对被加工物进行保持;以及液状树脂供给喷嘴32,其配置于该旋转工作台31的旋转中心的上方。将半导体晶片2的背面2b侧载置在这样构成的树脂膜形成装置3的旋转工作台31上。并且,使未图示的吸引构件进行动作,在旋转工作台31上吸引保持半导体晶片2。因此,保持在旋转工作台31上的半导体晶片2的正面2a为上侧。这样在旋转工作台31上保持半导体晶片2之后,如图2的(a)所示那样使旋转工作台31在箭头31a所示的方向上以规定的旋转速度(例如500~3000rpm)旋转,并且从配置在旋转工作台31的上方的液状树脂供给喷嘴32对半导体晶片2的正面2a的中央区域滴下规定的量的液状树脂30。并且,通过使旋转工作台31旋转60秒左右而如图2的(b)和(c)所示那在半导体晶片2的正面2a上形成薄膜300。包覆在半导体晶片2的正面2a上的薄膜300的厚度由上述液状树脂30的滴下量决定,可以为1~3μm左右。另外,作为水溶性的液状树脂,优选通过照射紫外线而固化的液状树脂,作为通过照射紫外线而固化的液状树脂,可以使用聚乙烯醇(PVA:Poly Vinyl Alcohol)、聚乙二醇(PEG:Poly Ethylene Glycol)、聚环氧乙烷(PEO:Poly Ethylene Oxide)。
在实施了上述的水溶性树脂包覆工序之后,实施薄膜固化工序,对包覆在半导体晶片2的正面2a上的薄膜300照射紫外线而进行固化。即,如图3所示,通过紫外线照射器4对包覆在半导体晶片2的正面2a上的薄膜300照射紫外线。其结果为,使由通过照射紫外线而固化的液状树脂形成的薄膜300固化。
接着,实施保护板固定工序,在对实施了水溶性树脂包覆工序的半导体晶片2的正面进行保护的保护板与上述薄膜300之间夹设接合材料而将半导体晶片2固定于保护板。即,如图4的(a)和(b)所示,对包覆在半导体晶片2的正面上的薄膜300上提供规定的量的接合材料5,利用保护板6均匀地按压该接合材料5的整个面,由此如图4的(b)所示那样半导体晶片2借助厚度均匀的接合层50固定于保护板6。另外,夹设在保护板6与包覆在半导体晶片2的正面上的薄膜300之间的接合层50的厚度可以为10~200μm左右。并且,作为接合材料5优选通过照射紫外线而固化的树脂,作为通过照射紫外线而固化的树脂可以使用聚酯(甲基)丙烯酸酯、聚氨酯(甲基)丙烯酸酯、环氧(甲基)丙烯酸酯等。并且,保护板6优选紫外线能够透过的树脂片,可以使用厚度为例如500μm~1mm左右的聚对苯二甲酸乙二酯(PET)树脂片、聚烯烃树脂片等。
在实施了上述的保护板固定工序之后,实施接合层固化工序,穿过固定有半导体晶片2的保护板6对接合层50照射紫外线而进行固化。即,如图5所示,利用紫外线照射器4从固定有半导体晶片2的保护板6侧照射紫外线。由于在图示的实施方式中,保护板6由紫外线能够透过的树脂片形成,因此紫外线穿过该保护板6而照射到接合层50,使接合层50固化。
接着,实施背面磨削工序,将固定有半导体晶片2的保护板6保持在卡盘工作台上,对半导体晶片2的背面进行磨削而形成为规定的厚度。使用图6的(a)所示的磨削装置7来实施该背面磨削工序。图6的(a)所示的磨削装置7具有:作为保持构件的卡盘工作台71,其对被加工物进行保持;以及磨削构件72,其对保持在该卡盘工作台71上的被加工物进行磨削。卡盘工作台71构成为在上表面上吸引保持被加工物,通过未图示的旋转驱动机构而在图6的(a)中箭头71a所示的方向上旋转。磨削构件72具有:主轴壳体721;旋转主轴722,其旋转自如地支承于该主轴壳体721,通过未图示的旋转驱动机构而旋转;安装座723,其装配于该旋转主轴722的下端;以及磨轮724,其安装于该安装座723的下表面。该磨轮724由圆环状的基台725和呈环状装配于该基台725的下表面的磨具726构成,基台725借助紧固螺栓727而安装于安装座723的下表面。
要想使用上述的磨削装置7来实施上述背面磨削工序,如图6的(a)所示那样将固定有半导体晶片2的保护板6侧载置在卡盘工作台71的上表面(保持面)上。并且,通过使未图示的吸引构件进行动作而在卡盘工作台71上隔着保护板6吸附保持半导体晶片2(晶片保持工序)。因此,保持在卡盘工作台71上的半导体晶片2的背面2b成为上侧。这样在卡盘工作台71上隔着保护板6吸引保持半导体晶片2之后,使卡盘工作台7在图6的(a)中箭头71a所示的方向上以例如300rpm旋转,并且使磨削构件72的磨轮724在图6的(a)中箭头724a所示的方向上以例如6000rpm旋转,如图6的(b)所示那样使磨具726与作为被加工面的半导体晶片2的背面2b接触,并使磨轮724如箭头724b所示那样以例如1μm/秒的磨削进给速度向下方(相对于卡盘工作台71的保持面垂直的方向)磨削进给规定的量。其结果为,半导体晶片2的背面2b被磨削而半导体晶片2形成为规定的厚度(例如100μm)。
接着,实施保护板剥离工序,将由接合材料构成的接合层50与固定有实施了背面磨削工序的半导体晶片2的保护板6一同剥离。即,如图7的(a)和(b)所示那样在划片带T的正面上粘接半导体晶片2的背面2b,该划片带T由聚烯烃等合成树脂片构成,其外周部以覆盖环状的框架F的内侧开口部的方式被装配,将接合层50与固定有半导体晶片2的保护板6一同从半导体晶片2剥离。另外,在将接合层50与保护板6一同从半导体晶片2剥离时,一边对夹设在半导体晶片2与保护板6之间的接合层50提供水蒸汽一边实施,由此能够容易地剥离。即使这样将接合层50与保护板6一同从半导体晶片2剥离,有时也会在半导体晶片2的正面上残留接合材料的一部分。
在实施了上述的保护板剥离工序之后,实施接合材料去除工序,对残留于半导体晶片2的正面的接合材料提供水,将薄膜300与接合材料一同去除。即,如图8的(a)所示那样,将实施了保护板剥离工序而隔着划片带T支承于环状的框架F的半导体晶片2隔着划片带T载置在清洗装置8的保持工作台81上,并使未图示的吸引构件进行动作而在保持工作台81上隔着划片带T吸引保持半导体晶片2。并且,从配置于保持工作台81的上方的清洗水供给喷嘴82对残留于半导体晶片2的正面的接合材料和薄膜300提供清洗水。其结果为,由于薄膜300由水溶性树脂构成,因此如图8的(b)所示那样被清洗水容易地去除并且残留于半导体晶片2的正面的接合材料也被去除。因此,由于不会在器件的正面上残留接合材料的一部分,因此不会使器件的品质降低。
如上所述,将实施了接合材料去除工序的半导体晶片2在隔着划片带T支承于环状的框架F的状态下搬送到作为下一工序的晶片分割工序,沿着分割预定线21分割成一个个的器件22。
接着,对本发明的晶片的加工方法的第2实施方式进行说明。在该第2实施方式中,在实施上述水溶性树脂包覆工序之前,实施切削槽形成工序,从半导体晶片2的正面侧沿着分割预定线21形成相当于器件22的完工厚度的切削槽,在上述背面磨削工序中通过使切削槽露出于半导体晶片2的背面而将半导体晶片2分割成一个个的器件22。
这里,关于上述切削槽形成工序,参照图9的(a)和(b)进行说明。
使用图9的(a)所示的切削装置9来实施切削槽形成工序。图9的(a)所示的切削装置9具有:卡盘工作台91,其对被加工物进行保持;切削构件92,其对保持在该卡盘工作台91上的被加工物进行切削;以及拍摄构件93,其对保持在该卡盘工作台91上的被加工物进行拍摄。卡盘工作台91构成为对被加工物进行吸引保持,通过未图示的切削进给机构而在图9的(a)中箭头X所示的切削进给方向上移动,并且通过未图示的分度进给机构而在箭头Y所示的分度进给方向上移动。
上述切削构件92包含:实质上水平配置的主轴壳体921;旋转主轴922,其旋转自如地支承于该主轴壳体921;以及切削刀具923,其装配于该旋转主轴922的前端部,旋转主轴922通过配设在主轴壳体921内的未图示的伺服电动机而在箭头922a所示的方向上旋转。另外,切削刀具923的厚度在本实施方式中被设定为30μm。上述拍摄构件93装配于主轴壳体921的前端部,具有:照明构件,其对被加工物进行照明;光学系统,其捕捉由该照明构件照明的区域;以及拍摄元件(CCD)等,其拍摄由该光学系统捕捉到的图像,上述拍摄构件93将拍摄到的图像信号发送给未图示的控制构件。
要想使用上述的切削装置9来实施切削槽形成工序,如图9的(a)所示那样将半导体晶片2的背面2b侧载置在卡盘工作台91上,并使未图示的吸引构件进行动作而在卡盘工作台91上吸引保持半导体晶片2。因此,保持在卡盘工作台91上的半导体晶片2的正面2a成为上侧。这样,吸引保持着半导体晶片2的卡盘工作台91被未图示的切削进给机构定位在拍摄构件93的正下方。
当将卡盘工作台91定位在拍摄构件93的正下方时,执行对准作业,通过拍摄构件93和未图示的控制构件检测应该沿着半导体晶片2的分割预定线21形成分割槽的切削区域。即,拍摄构件93和未图示的控制构件执行用于进行形成在半导体晶片2的规定的方向上的分割预定线21与切削刀具923的对位的图案匹配等图像处理,并执行切削区域的对准(对准工序)。并且,针对形成于半导体晶片2的在与上述规定的方向垂直的方向上延伸的分割预定线21也同样地执行切削区域的对准。
在如上所述进行了对保持在卡盘工作台91上的半导体晶片2的切削区域进行检测的对准之后,使保持着半导体晶片2的卡盘工作台91移动至切削区域的切削开始位置。并且,使切削刀具923在图9的(a)中箭头922a所示的方向上旋转并且向下方移动而实施切入进给。该切入进给位置设定为切削刀具923的外周缘距半导体晶片2的正面相当于器件的完工厚度的深度位置(例如,100μm)。这样,在实施了切削刀具923的切入进给之后,通过使切削刀具923旋转并且使卡盘工作台91在图9的(a)中箭头X所示的方向上切削进给而如图9的(b)所示那样沿着分割预定线21形成宽度为30μm且相当于器件的完工厚度的深度(例如,100μm)的切削槽210(切削槽形成工序)。
在实施了上述的切削槽形成工序之后,实施上述水溶性树脂包覆工序和保护板固定工序,然后实施上述背面磨削工序。在该背面磨削工序中,当如图10的(a)和(b)所示那样对半导体晶片2的背面进行磨削而达到厚度为例如100μm时,切削槽210露出于背面2b,半导体晶片2被分割成一个个的器件。另外,在本实施方式中,由于在实施了上述切削槽形成工序之后实施上述水溶性树脂包覆工序,因此水溶性树脂被填充到切削槽210内。因此,在背面磨削工序中当切削槽210露出于半导体晶片2的背面时,填充到切削槽210内的水溶性树脂露出。
接着,对本发明的晶片的加工方法的第3实施方式进行说明。在该第3实施方式中,在实施上述水溶性树脂包覆工序之前实施改质层形成工序,将对于半导体晶片2具有透过性的波长的激光光线的聚光点定位在半导体晶片2的内部而沿着分割预定线21进行照射而在半导体晶片2的内部沿着分割预定线21形成作为分割起点的改质层,在上述背面磨削工序中沿着形成有作为分割起点的改质层的分割预定线将半导体晶片2分割成一个个的器件。
这里,参照图11的(a)、(b)和(c)对上述改质层形成工序进行说明。使用图11的(a)所示的激光加工装置10来实施改质层形成工序。图11的(a)所示的激光加工装置10具有:卡盘工作台11,其对被加工物进行保持;激光光线照射构件12,其对保持在该卡盘工作台11上的被加工物照射激光光线;以及拍摄构件13,其对保持在卡盘工作台11上的被加工物进行拍摄。卡盘工作台11构成为对被加工物进行吸引保持,通过未图示的加工进给构件而在图11的(a)中箭头X所示的加工进给方向上移动,并且通过未图示的分度进给构件而在图11的(a)中箭头Y所示的分度进给方向上移动。
上述激光光线照射构件12包含实质上水平配置的圆筒形状的外壳121。在外壳121内配设有未图示的具有脉冲激光光线振荡器或重复频率设定构件的脉冲激光光线振荡构件。在上述外壳121的前端部装配有用于对从脉冲激光光线振荡构件振荡出的脉冲激光光线进行会聚的聚光器122。另外,激光光线照射构件12具有用于对由聚光器122会聚的脉冲激光光线的聚光点位置进行调整的聚光点位置调整构件(未图示)。
拍摄构件13装配于构成上述激光光线照射构件12的外壳121的前端部,该拍摄构件13具有:照明构件,其对被加工物进行照明;光学系统,其捕捉由该照明构件照明的区域;以及拍摄元件(CCD)等,其拍摄由该光学系统捕捉到的图像,拍摄构件13将拍摄到的图像信号发送给未图示的控制构件。
要想使用上述的激光加工装置10来实施改质层形成工序,首先如上述的图11的(a)所示那样将半导体晶片2的背面2b侧载置在卡盘工作台11上。并且,通过未图示的吸引构件将半导体晶片2吸附保持在卡盘工作台11上。因此,保持在卡盘工作台11上的半导体晶片2的正面2a成为上侧。利用未图示的加工进给构件将这样吸引保持着半导体晶片2的卡盘工作台11定位在拍摄构件13的正下方。
当将卡盘工作台11定位在拍摄构件13的正下方时,执行对准作业,通过拍摄构件13和未图示的控制构件检测应该进行半导体晶片2的激光加工的加工区域。即,拍摄构件13和未图示的控制构件执行用于进行形成在半导体晶片2的规定的方向上的分割预定线21与沿着分割预定线21照射激光光线的激光光线照射构件12的聚光器122的对位的图案匹配等图像处理,执行激光光线照射位置的对准。并且,针对形成于半导体晶片2的在与上述规定的方向垂直的方向上延伸的分割预定线21,也同样地执行激光光线照射位置的对准。
在如上所述对形成于保持在卡盘工作台11上的半导体晶片2的分割预定线21进行检测并进行了激光光线照射位置的对准之后,如图11的(b)所示那样使卡盘工作台11移动至照射激光光线的激光光线照射构件12的聚光器122所在的激光光线照射区域,并将规定的分割预定线21的一端(在图11的(b)中为左端)定位在激光光线照射构件12的聚光器122的正下方。接着,将从聚光器122照射的脉冲激光光线的聚光点P定位在半导体晶片2的厚度方向中间部。并且,从聚光器122照射对于硅晶片具有透过性的波长(例如为1064nm)的脉冲激光光线并且使卡盘工作台11在图11的(b)中箭头X1所示的方向上以规定的进给速度移动。并且,如图11的(c)所示那样在激光光线照射构件12的聚光器122的照射位置到达分割预定线21的另一端的位置之后,停止脉冲激光光线的照射并且停止卡盘工作台11的移动。其结果为,在半导体晶片2的内部如图11的(c)所示那样沿着分割预定线21形成改质层220(改质层形成工序)。沿着形成于半导体晶片2的所有的分割预定线21实施该改质层形成工序。
在实施了上述的改质层形成工序之后,实施上述水溶性树脂包覆工序和保护板固定工序,然后实施上述背面磨削工序。在该背面磨削工序中,如图12的(a)和(b)所示那样对半导体晶片2的背面进行磨削而将半导体晶片2形成为规定的厚度(例如100μm),并且沿着形成有上述改质层220且强度降低的分割预定线21产生裂痕221而分割成一个个的器件。
另外,在上述的改质层形成工序中示出了从半导体晶片2的正面侧将激光光线的聚光点定位在内部而沿着分割预定线21进行照射的例子,但在从半导体晶片2的背面侧将激光光线的聚光点定位在内部而沿着分割预定线21进行照射的情况下,也可以在实施了上述水溶性树脂包覆工序和保护板固定工序之后实施改质层形成工序。
如上所述在实施了第2实施方式和第3实施方式的背面磨削工序之后,与上述图7的(a)和(b)所示的保护板剥离工序同样地实施保护板剥离工序,将由接合材料构成的接合层50与固定有半导体晶片2的保护板6一同从半导体晶片2剥离。即,如图13的(a)和(b)所示那样,将被分割成一个个的器件22的半导体晶片2的背面2b粘接在划片带T的正面上,该划片带T由聚烯烃等合成树脂片构成,其外周部以覆盖环状的框架F的内侧开口部的方式被装配,将接合层50与固定有半导体晶片2的保护板6一同从半导体晶片2剥离。另外,在本实施方式中,实施了上述背面磨削工序,切削槽210露出于背面或者产生了裂痕221,因而半导体晶片2被分割成一个个的器件22。这样,即使将接合层50与保护板6一同从半导体晶片2剥离,有时也在分割成一个个的器件22的半导体晶片2的正面上残留接合材料的一部分。
在实施了上述的保护板剥离工序之后,与上述图8的(a)和(b)所示的接合材料去除工序同样地实施接合材料去除工序,对残留于半导体晶片2的正面的接合材料提供水,将薄膜300与接合材料一同去除。即,如图14的(a)所示那样实施保护板剥离工序,隔着划片带T在清洗装置8的保持工作台81上对隔着划片带T支承于环状的框架F的被分割成一个个的器件22的半导体晶片2进行吸引保持,从清洗水供给喷嘴82对残留于半导体晶片2的正面的接合材料和薄膜300提供清洗水。其结果为,如图14的(b)和(c)所示那样由于薄膜300由水溶性树脂构成,因此通过清洗水容易地将其去除,并且残留于半导体晶片2的正面的接合材料也被去除。因此,不存在接合材料的一部分残留在器件22的正面上的情况,因此不会使器件22的品质降低。
Claims (3)
1.一种晶片的加工方法,对晶片进行加工,该晶片在正面上呈格子状形成有多条分割预定线,并且在由该多条分割预定线划分的多个区域中形成有器件,该晶片的加工方法的特征在于,具有如下的工序:
水溶性树脂包覆工序,在晶片的正面上包覆水溶性的液状树脂而形成薄膜;
保护板固定工序,在对晶片的正面进行保护的保护板与该薄膜之间夹设接合材料而将晶片固定于保护板;
背面磨削工序,利用卡盘工作台对固定了晶片的该保护板侧进行保持,对晶片的背面进行磨削而形成为规定的厚度;
保护板剥离工序,在实施了该背面磨削工序之后,将该接合材料与固定了晶片的该保护板一同剥离;以及
接合材料去除工序,对实施了该保护板剥离工序的晶片的正面上残留的该接合材料提供水,将该薄膜与该接合材料一同去除。
2.根据权利要求1所述的晶片的加工方法,其中,
该晶片的加工方法还包含切削槽形成工序,在实施该水溶性树脂包覆工序之前,从晶片的正面侧沿着分割预定线形成相当于器件的完工厚度的切削槽,
在该背面磨削工序中,使切削槽露出于晶片的背面而将晶片分割成一个个的器件。
3.根据权利要求1所述的晶片的加工方法,其中,
该晶片的加工方法还包含改质层形成工序,将对于晶片具有透过性的波长的激光光线的聚光点定位在晶片的内部而沿着分割预定线进行照射,在晶片的内部沿着分割预定线形成作为分割起点的改质层,
在该背面磨削工序中,沿着形成有作为分割起点的改质层的分割预定线将晶片分割成一个个的器件。
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