CN106233476A - 波长转换构件及其制造方法 - Google Patents
波长转换构件及其制造方法 Download PDFInfo
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- CN106233476A CN106233476A CN201580021247.4A CN201580021247A CN106233476A CN 106233476 A CN106233476 A CN 106233476A CN 201580021247 A CN201580021247 A CN 201580021247A CN 106233476 A CN106233476 A CN 106233476A
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- base material
- phosphor ceramic
- coating
- wavelength converting
- converting member
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
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Abstract
波长转换构件的制造方法包括下述工序:准备元件配置基材的工序,所述元件配置基材具备基材和在基材上沿与基材的厚度方向正交的方向隔开间隔配置的多个荧光体陶瓷元件;使多个荧光体陶瓷元件埋在含有无机物的固化性层中的工序;使固化性层固化得到被覆层的工序;以及,以包括至少1个荧光体陶瓷元件的方式将被覆层和基材沿厚度方向切断的工序。
Description
技术领域
本发明涉及波长转换构件及其制造方法,详细而言,涉及波长转换构件的制造方法及通过该方法制造的波长转换构件。
背景技术
发光二极管装置一般安装在基板的表面,具备发出蓝色光的LED(发光二极管元件)、能够将蓝色光转换成黄色光的设置在LED上的荧光体层和对LED进行封装的封装层。这种发光二极管装置由封装在封装层中的LED发光,通过透过荧光体层的蓝色光与在荧光体层中蓝色光的一部分经波长转换得到的黄色光的混色来发出白色光。
作为制造这种发光二极管装置的方法,提出了以下方法(例如参见专利文献1。)。
即,提出了以下方法:首先,在透明封装层设置凹部,通过灌注在该凹部注入固化性的荧光体组合物,使其固化,由此制作具备透明封装层和荧光体层的波长转换片,接着,在波长转换片的荧光体层的表面埋设LED。
现有技术文献
专利文献
专利文献1:日本特开2013-187227公报
发明内容
发明要解决的问题
然而,发光二极管装置、半导体激光装置等半导体发光装置有时会装备高功率(高输出功率)的光源。用波长转换片对这种高功率的光进行波长转换的情况下,波长转换片需要高度的耐热性。因此,研究在波长转换片中使用耐热性优异的荧光体陶瓷。
然而,荧光体陶瓷由于将荧光体在高温(例如1000℃以上)下烧结,因此存在无法如上述专利文献1的方法那样灌注荧光体组合物并使其固化来形成的不利情况。
本发明的目的在于提供能够简便且工业化地制造波长转换构件的方法及通过该方法制造的耐热性优异的波长转换构件。
用于解决问题的方案
本发明的波长转换构件的制造方法的特征在于,该方法包括下述工序:准备元件配置基材的工序,所述元件配置基材具备基材和在前述基材上沿与前述基材的厚度方向正交的方向隔开间隔配置的多个荧光体陶瓷元件;使前述多个荧光体陶瓷元件埋在含有无机物的固化性层中的工序;使前述固化性层固化得到被覆层的工序;以及,以包括至少1个前述荧光体陶瓷元件的方式将前述被覆层和前述基材沿厚度方向切断的工序。
此外,在本发明的波长转换构件的制造方法中,适宜的是,前述固化性层由陶瓷墨或固化性树脂组合物形成,所述固化性树脂组合物含有无机氧化物颗粒和金属颗粒中的至少1种无机颗粒以及固化性树脂。
此外,在本发明的波长转换构件的制造方法中,适宜的是,前述基材为易剥离性片。
本发明的波长转换构件的特征在于,通过上述制造方法得到。
发明的效果
本发明的波长转换构件的制造方法能够简便且工业化地制造具备荧光体陶瓷元件和被覆其表面的被覆层的波长转换构件。
通过本发明的制造方法得到的本发明的波长转换构件的耐热性优异。
附图说明
图1A、图1B、图1C、图1D和图1E是对制造本发明的波长转换构件的一个实施方式的方法进行说明的剖面工序图,图1A示出准备坯片的工序,图1B示出煅烧坯片的工序,图1C示出将荧光体陶瓷层配置于基材的工序,图1D示出刮取荧光体陶瓷层的一部分的工序,图1E示出得到元件配置基材的工序。
图2F、图2G、图2H、图2I和图2J是接着图1A~图1E对制造本发明的波长转换构件的一个实施方式的方法进行说明的剖面工序图,图2F示出将元件配置基材与固化性层相对配置的工序,图2G示出使荧光体陶瓷元件埋在固化性层中的工序,图2H示出使固化性层固化的工序,图2I示出切断被覆层和基材的工序,图2J示出得到波长转换构件的工序。
图3示出图1E的工序的俯视图。
图4示出具备本发明的波长转换构件的一个实施方式的波长转换散热构件的剖视图。
图5A、图5B、图5C和图5D是对制造本发明的波长转换构件的另一实施方式(荧光体陶瓷元件为俯视圆形的方式)的方法进行说明的剖面工序图,图5A示出准备耐热性基板的工序,图5B示出形成坯体的工序,图5C示出煅烧坯体的工序,图5D示出对荧光体陶瓷元件进行再配置的工序。
图6示出图5D的工序的俯视图。
具体实施方式
参照图1A~图2J对波长转换构件1的制造方法进行说明。
需要说明的是,以图1A~图1E的纸面上下方向为“上下方向”(第1方向、厚度方向),纸面上侧为上侧,纸面下侧为下侧。此外,以图1A~图1E的纸面左右方向为“宽度方向”(第2方向、左右方向、与第1方向正交的方向),纸面右方向为右侧,图1A~图1E的纸面左方向为左侧。此外,以图1A~图1E的纸张厚度方向为“前后方向”(第3方向、与第1方向和第2方向正交的方向),图1A~图1E的纸张厚度靠近读者的一侧为前侧,图1A~图1E的纸张厚度远离读者的一侧为后侧。对于图1A~图1E以外的附图,也以图1A~图1E的方向为基准。
波长转换构件1的制造方法包括下述工序:准备坯片2的工序,煅烧坯片2的工序,将荧光体陶瓷层3配置于基材4的工序,刮取荧光体陶瓷层3的一部分的工序,得到配置有荧光体陶瓷元件5的元件配置基材11的工序,将元件配置基材11与固化性层6相对配置的工序,使荧光体陶瓷元件5埋在固化性层6中的工序,使固化性层6固化的工序,切断被覆层7和基材4的工序和得到波长转换构件1的工序。
首先,如图1A所示,准备坯片2(准备工序)。坯片2例如通过将含有荧光体材料、粘结剂树脂和溶剂的浆料涂布在脱模片8的上表面并干燥来形成。
作为荧光体材料,是构成后述荧光体的原材料,例如从氧化铝、氧化钇、氧化铈、氧化锆、氧化钛、还有进一步使其他元素活化而得到的物质等中适当选择来制备。
粘结剂树脂使用坯片2的制作中使用的公知的粘结剂树脂即可,例如可列举出:丙烯酸类聚合物、缩丁醛类聚合物、乙烯基类聚合物、聚氨酯类聚合物等。优选列举出丙烯酸类聚合物。
对于粘结剂树脂的含有比率,相对于荧光体材料与粘结剂树脂的总体积量,例如为5体积%以上,优选为20体积%以上,并且,为80体积%以下,优选为60体积%以下。
作为溶剂,可列举出:例如水,例如丙酮、甲乙酮、甲醇、乙醇、甲苯、丙酸甲酯、甲基溶纤剂等有机溶剂。
对于溶剂的含有比率,在浆料中,例如为1~30质量%。
在浆料中可以根据需要而含有分散剂、增塑剂、烧结助剂等公知的添加剂。
接着,将上述成分按上述比例配混,用球磨机等进行湿式混合,由此制备浆料。
接着,将浆料利用刮刀、照相凹版涂布机、喷注涂布机、铸涂机、旋转涂布机、辊涂布机等公知的涂布方法涂布在脱模片8的上表面,进行干燥,由此形成坯片2。
作为脱模片8,可列举出:例如聚对苯二甲酸乙二醇酯(PET)薄膜等聚酯薄膜,例如聚碳酸酯薄膜,例如聚乙烯薄膜、聚丙烯薄膜等聚烯烃薄膜,例如聚苯乙烯薄膜,例如丙烯酸薄膜,例如有机硅树脂薄膜、氟树脂薄膜等树脂薄膜等。进而,还可列举出:例如铜箔、不锈钢箔等金属箔。优选列举出树脂薄膜,进一步优选列举出聚酯薄膜。
为了提高脱模性,可根据需要而对脱模片8的表面实施脱模处理。
脱模片8的厚度从例如操作性、成本的角度来看,例如为10~200μm。
如此得到的坯片2是荧光体陶瓷层3(荧光体陶瓷片)的烧结前陶瓷,形成为俯视大致矩形的平板形状。
需要说明的是,坯片2为了获得所期望的厚度,也可以通过利用热层压将多个(多层)坯片2层叠来形成。
坯片2的厚度例如为10μm以上,优选为30μm以上,并且,例如为500μm以下,优选为200μm以下。
接着,如图1B所示,煅烧坯片2(煅烧工序)。
煅烧温度例如为1300℃以上,优选为1500℃以上,并且,例如为2000℃以下,优选为1800℃以下。
煅烧时间例如为1小时以上,优选为2小时以上,并且,例如为24小时以下,优选为5小时以下。
煅烧可以在常压下实施,还可以在减压下或真空下实施。优选在减压下或真空下实施。
在上述煅烧(主煅烧)前,为了将粘结剂树脂、分散剂等有机成分热分解和去除,可以使用电炉在空气中、例如在600~1300℃下预加热,实施脱粘结剂处理。
此外,煅烧中的升温速度例如为0.5~20℃/分钟。
由此,得到荧光体陶瓷层3。
如此得到的荧光体陶瓷层3形成为俯视大致矩形的平板形状。
荧光体陶瓷层3的厚度例如为10μm以上,优选为50μm以上,并且,例如为500μm以下,优选为200μm以下。
接着,如图1C所示,将荧光体陶瓷层3配置于基材4(基材配置工序)。具体而言,将荧光体陶瓷层3配置在基材4的上表面的大致中央部。
作为基材4,从刮板(后述)的刮取性和基材4对波长转换构件1的剥离性的角度来看,优选列举出易剥离性片。易剥离性片例如由可以通过加热等而容易地剥离的热剥离片形成。
热剥离片具备支撑层和层叠在支撑层的上表面的粘合层。
支撑层例如由聚酯等耐热性树脂形成。
粘合层例如由在常温(25℃)下具有粘合性、在加热时粘合性减小(或者失去粘合性)的热膨胀性粘合剂等形成。
热剥离片可以使用市售品,具体而言,可以使用REVALPHA系列(注册商标、日东电工株式会社制造)等。
热剥离片在通过支撑层隔着粘合层确实地支撑荧光体陶瓷层3(甚至是波长转换构件1)的同时,通过加热带来的粘合层的粘合性的降低自波长转换构件1剥离。
此外,基材4可以由例如聚烯烃(具体为聚乙烯、聚丙烯)、乙烯·乙酸乙烯酯共聚物(EVA)等乙烯基聚合物、例如聚对苯二甲酸乙二醇酯、聚碳酸酯等聚酯、例如聚四氟乙烯等氟树脂等树脂材料等形成。此外,基材也可以由例如铁、铝、不锈钢等金属材料等形成。
基材4的厚度例如为10~1000μm。
由此,得到具备基材4和设置在基材4的上表面的荧光体陶瓷层3的陶瓷层叠体9。
接着,如图1D所示,将荧光体陶瓷层3的一部分去除(去除工序)。具体而言,使用作为刮板的分割刮板10刮取荧光体陶瓷层3的一部分。
分割刮板10是公知或市售的分割装置中使用的圆盘状的旋转刀片。分割刮板10的尖端(下端)形成为在沿着切断方向的方向(图1D中为纸张厚度方向的前后方向)投影时在上下方向延伸的大致矩形(板状)。即,形成为切断面为大致矩形。
分割刮板10的尖端的宽度方向长度X例如为0.05mm以上,优选为0.1mm以上,例如为2.0mm以下,优选为1.0mm以下。
该工序中,首先,如图1D所示,沿前后方向刮取荧光体陶瓷层3的一部分。
具体而言,将陶瓷层叠体9以切断方向为前后方向的方式配置在分割装置内。接着,在分割刮板10移动时,以分割刮板10的尖端(下端)与荧光体陶瓷层3接触且不贯穿基材4的方式调节分割刮板10或陶瓷层叠体9的配置。即,以分割刮板10的尖端到达基材4的上表面且不到达基材4的下表面的方式调节分割刮板10或陶瓷层叠体9的上下方向位置。接着,一边使分割刮板10高速旋转,一边使其在沿着切断方向的前后方向移动。
由此,沿前后方向自基材4刮取与分割刮板10(尖端周边)相接触的部分的荧光体陶瓷层3。即,荧光体陶瓷层3刮取为大致矩形。在被刮取的部分处,基材4的上表面露出。
如图1D的虚拟线所示,隔开所期望的间隔(即,所期望的荧光体陶瓷元件5的宽度方向长度)反复实施该前后方向的刮取。
接着,与上述同样,一边使分割刮板10高速旋转,一边使其以切断方向沿宽度方向的方式移动,由此沿宽度方向刮取荧光体陶瓷层3的一部分。隔开所期望的间隔反复实施该宽度方向的刮取。
即,如图3所示,以网格状刮取荧光体陶瓷层3。
如此,如图1E和图3所示,得到具备基材4和在基材4的上表面以网格状整齐排列的多个荧光体陶瓷元件5的元件配置基材11。
需要说明的是,上述工序中,通过固定荧光体陶瓷层3、移动分割刮板10来刮取荧光体陶瓷层3的一部分,而例如也可以通过固定进行高速旋转的分割刮板10的位置、利用X-Y滑台等使陶瓷层叠体9相对于分割刮板10沿前后方向或宽度方向移动来刮取荧光体陶瓷层3的一部分。
荧光体陶瓷元件5分别形成为剖视大致矩形和俯视大致矩形。
荧光体陶瓷元件5的宽度方向长度Y例如为0.2mm以上,优选为1mm以上,并且,例如为10mm以下,优选为5mm以下。荧光体陶瓷元件5的前后方向长度例如为0.05mm以上,优选为0.1mm以上,并且,例如为5mm以下,优选为3mm以下。
多个荧光体陶瓷元件5的宽度方向间隔和前后方向间隔与分割刮板10的尖端的宽度方向长度X相同。
接着,如图2F所示,将元件配置基材11与固化性层6相对配置(相对配置工序)。具体而言,首先,准备在脱模片8a上设置有固化性层6的固化性层片20。固化性层片20通过在脱模片8a的上表面用公知的方法将含有无机物的固化性组合物涂布来制造。
作为固化性组合物,只要含有无机物、具备固化性就没有限定,例如可列举出:陶瓷墨、含有固化性树脂和无机颗粒的固化性树脂组合物,含有碱金属硅酸盐和无机颗粒的硅酸盐水溶液。
陶瓷墨例如含有无机物的陶瓷、有机聚硅氧烷等粘结剂和溶剂,在低温(例如120~180℃)下固化(固体化)。作为陶瓷墨中的无机物,例如可列举出:二氧化硅、二氧化钛、钛酸钾等白色颜料等。作为溶剂,可列举出:丁二醇醚、二乙二醇二丁醚等醚。另外,从分散性的角度来看,优选白色颜料经过表面处理。
作为陶瓷墨,可以使用市售品,具体可列举出:AIN Co.,Ltd.制造的陶瓷墨(RG型、AN型、UV型、SD型)等。
作为固化性树脂组合物中含有的固化性树脂,例如列举出:固化性有机硅树脂、环氧树脂、丙烯酸类树脂等。优选列举出固化性有机硅树脂。
作为固化性有机硅树脂,例如可列举出:缩合反应固化型有机硅树脂、加成反应固化型有机硅树脂等。优选列举出加成反应固化型有机硅树脂。
加成反应固化型有机硅树脂例如由含有作为主剂的含烯属不饱和烃基的聚硅氧烷和作为交联剂的有机氢硅氧烷的有机硅树脂组合物构成。加成反应固化型有机硅树脂通常以含有主剂(含烯属不饱和烃基的聚硅氧烷)的A液和含有交联剂(有机氢硅氧烷)的B液的双组分的形式提供。接着,在将主剂(A液)与交联剂(B液)混合制备混合液、由混合液形成被覆层7的工序中,含烯属不饱和烃基的聚硅氧烷与有机氢硅氧烷通过加热等进行加成反应,从而加成反应固化型有机硅树脂固化,形成有机硅弹性体(固化体)。
作为加成反应固化型有机硅树脂,可以使用市售品(商品名:KER-2500、信越化学工业株式会社制造、商品名:LR-7665、WACKER ASAHIKASEI SILICONE Co.,Ltd.制造等)。
作为构成无机颗粒的无机物,可列举出:例如二氧化硅、二氧化钛、氧化铝、氧化锆、钛酸复合氧化物(例如钛酸钡、钛酸钾)等无机氧化物,例如银、铝等金属等。从光反射性、散热性的角度来看,优选列举出:二氧化钛、氧化铝、氧化锆、钛酸钡、银,从长期耐热性的角度来看,更优选列举出:二氧化钛、氧化铝、氧化锆、钛酸钡,进一步优选列举出:二氧化钛、氧化铝。
无机颗粒的平均粒径(平均最大长度)例如为0.1~50μm。
作为固化性树脂组合物,优选可列举出:含有由选自由二氧化钛、氧化铝、氧化锆、钛酸钡和银组成的组中的至少1种构成的无机颗粒以及固化性有机硅树脂的固化性树脂组合物,更优选列举出:含有由选自由二氧化钛、氧化铝、氧化锆和钛酸钡组成的组中的至少1种构成的无机颗粒以及固化性有机硅树脂的固化性树脂组合物,进一步优选列举出:含有由二氧化钛和氧化铝中的至少1种构成的无机颗粒以及固化性有机硅树脂的固化性树脂组合物。
作为硅酸盐水溶液中含有的碱金属硅酸盐,例如可列举出硅酸钠(水玻璃)等。
固化性组合物中的无机物的含有比率(固体成分量)例如为30质量%以上,优选为40质量%以上,进一步优选为60质量%以上,例如为90质量%以下,优选为80质量%以下。固化性组合物中的粘结剂或固化性树脂的含有比例(固体成分量)例如为10质量%以上,优选为20质量%以上,例如为70质量%以下,优选为60质量%以下,进一步优选为40质量%以下。
作为固化性组合物,可优选列举出陶瓷墨、含有无机氧化物颗粒和金属颗粒中的至少1种无机颗粒以及固化性树脂的固化性树脂组合物,更优选列举出陶瓷墨、含有无机氧化物颗粒和固化性树脂的固化性树脂组合物,进一步优选列举出陶瓷墨。由此,能够提高被覆层7的散热性、反射性。
脱模片8a与脱模片8同样。
作为固化性组合物的涂布方法,可列举出:印刷、喷涂机等公知的涂布方法。
固化性层6的厚度例如为80μm以上,优选为90μm以上,并且,例如为1000μm以下,优选为500μm以下。
接着,以荧光体陶瓷元件5与固化性层6相对的方式使元件配置基材11与固化性层片20隔开间隔沿厚度方向相对配置。
接着,如图2G所示,使荧光体陶瓷元件5埋在固化性层6中(埋没工序)。具体而言,使元件配置基材11向下侧移动,按压至固化性层片20。
由此,荧光体陶瓷元件5的表面(下表面和侧面)被固化性层6被覆。并且,从荧光体陶瓷元件5露出的基材4的表面(下表面)被固化性层6被覆。
压力例如为0.03MPa以上,优选为0.1MPa以上,并且,例如为2MPa以下,优选为0.5MPa以下。
由此,得到具备基材4、在基材4下整齐排列的多个荧光体陶瓷元件5、以被覆多个荧光体陶瓷元件5的下表面和侧面的方式形成在基材4下的固化性层6和配置在固化性层6下的脱模片8a的固化性层-元件层叠体12。
需要说明的是,将元件配置基材11与固化性层片20相对配置的工序和使荧光体陶瓷元件5埋在固化性层6中的工序可以作为连续进行的一个工序来实施。
接着,如图2H所示,使固化性层6固化(固化工序)。具体而言,加热固化性层-元件层叠体12,使固化性层6固化(固体化)。
加热温度例如为100℃以上,优选为120℃以上,并且,例如为200℃以下,优选为180℃以下。
加热时间例如为0.5小时以上,优选为1小时以上,并且,例如为12小时以下,优选为6小时以下。
此外,也可以根据需要而在加热固化前在例如50~100℃、1~10小时的条件下实施干燥工序。
由此,固化性层6被加热固化,形成被覆层7。
即,得到具备基材4、在基材4下整齐排列的多个荧光体陶瓷元件5、以被覆多个荧光体陶瓷元件5的下表面和侧面的方式形成在基材4下的被覆层7和配置在被覆层7下的脱模片8a的被覆层-元件层叠体13。
接着,如图2I所示,以包括1个荧光体陶瓷元件5的方式将被覆层7和基材4沿厚度方向切断(切断工序)。即,切分成多个荧光体陶瓷元件5,对荧光体陶瓷元件5进行单片化(单个化)。
具体而言,在相互邻接的荧光体陶瓷元件5之间,沿厚度方向,使用窄刮板19通过分割对基材4、被覆层7和脱模片8a进行切断加工。
窄刮板19是宽度比分割刮板10窄的刮板,是公知或市售的分割装置中使用的圆盘状的旋转刀片。窄刮板19形成为在向沿着切断方向的方向(图2I中为纸张厚度方向的前后方向)投影时在上下方向延伸的大致矩形(板状)。
窄刮板19的宽度方向长度Z比分割刮板10的宽度方向长度X窄,例如为X的80%以下,优选为60%以下,并且,例如为10%以上,优选为30%以上。具体而言,例如为0.01mm以上,优选为0.05mm以上,并且,例如为1.5mm以下,优选为0.8mm以下。
该切断工序将被覆层-元件层叠体13配置在分割装置内。接着,调节窄刮板19或被覆层-元件层叠体13的配置,以便将基材4、被覆层7和脱模片8a沿厚度方向切断。即,以窄刮板19的尖端贯穿基材4和被覆层7并到达脱模片8a的下表面的方式,调节窄刮板19或被覆层-元件层叠体13的上下方向位置。接着,与上述去除工序同样,一边使窄刮板19高速旋转,一边使其沿前后方向和宽度方向(即以网格状)在相互邻接的荧光体陶瓷元件5之间移动,对基材4、被覆层7和脱模片8a进行切断加工。
由此,如图2J所示,得到具备基材4、单个化的荧光体陶瓷元件5、被覆层7和脱模片8a的的基材层叠波长转换构件14。
接着,如图2J的虚拟线所示,剥离基材4和脱模片8a,由此得到具备单个化的荧光体陶瓷元件5和被覆层7的波长转换构件1。
荧光体陶瓷元件5设置在基材4的下表面的俯视大致中央,由荧光体的陶瓷(煅烧体)形成。
荧光体陶瓷中含有的荧光体具有波长转换功能,例如可列举出:能够将蓝色光转换成黄色光的黄色荧光体、能够将蓝色光转换成红色光的红色荧光体等。
作为黄色荧光体,可列举出:例如(Ba,Sr,Ca)2SiO4:Eu、(Sr,Ba)2SiO4:Eu(原硅酸钡(BOS))等硅酸盐荧光体、例如Y3Al5O12:Ce(YAG(钇·铝·石榴石):Ce)、Tb3Al3O12:Ce(TAG(铽·铝·石榴石):Ce)等具有石榴石型晶体结构的石榴石型荧光体,例如Ca-α-SiAlON等氮氧化物荧光体等。作为红色荧光体,例如可列举出:CaAlSiN3:Eu、CaSiN2:Eu等氮化物荧光体等。
被覆层7以被覆荧光体陶瓷元件5的表面的方式设置在基材4的下表面。具体而言,以被覆荧光体陶瓷元件5的表面(下表面和侧面)以及基材4的下表面(配置有荧光体陶瓷元件5的面除外)的方式设置在基材4的下表面。
被覆层7的厚度(从图2J中的荧光体陶瓷元件5的下表面到脱模片8a的上表面的距离T)例如为10μm以上,优选为50μm以上,并且,例如为500μm以下,优选为200μm以下。
被覆层7的侧面的宽度(从图2J中的荧光体陶瓷元件5的侧面到被覆层7的外侧表面的距离W)例如为10μm以上,优选为50μm以上,并且,例如为500μm以下,优选为200μm以下。
被覆层7如上所述由含有无机物的组合物形成。
被覆层7优选具有作为散热层和反射层的作用。
被覆层7的热导率超过0.20W/m·K,优选为1.0W/m·K以上,进一步优选为3.0W/m·K以上,并且,例如为30.0W/m·K以下。热导率通过氙气闪光分析仪(NETZSCH公司制造LFA447)求出。
被覆层7的反射率例如为80%以上,优选为90%以上,并且,例如为100%以下。反射率通过使用紫外可见分光光度计(“V670”、日本分光株式会社制造)测定波长450nm的光的反射来求出。
该波长转换构件1例如可以用于车载灯具、高天花板悬挂灯具、道路灯具、演出灯具等具备高输出功率的光源的适合远处照射的半导体发光装置(例如发光二极管装置、半导体激光装置)等。
具体而言,如图4所示,半导体发光装置15具备光源16和波长转换散热构件17。
光源16可列举出:发光二极管(LED)、半导体激光(LD)等。
波长转换散热构件17与光源16隔开间隔相对配置,具备波长转换构件1和散热构件18。
散热构件18设置在波长转换构件1的被覆层7的表面(下表面)。散热构件18形成为俯视大致矩形的平板状,在下表面向下侧设置有用于提高散热性的多个凸部。散热构件18例如为散热片,例如由铝、铜等导热性金属、AlN等陶瓷材料形成。通过散热构件18,能够将在波长转换构件1中产生的热向外部散热。
波长转换散热构件17通过首先将基材层叠波长转换构件14的脱模片8a剥离,利用公知的导热性粘接剂层(未图示)在露出的被覆层7的表面粘接散热构件18,接着,利用加热等将基材4自被覆层7和荧光体陶瓷元件5剥离来得到。
接着,由于这种波长转换构件1的荧光体层由荧光体陶瓷元件5形成,因此耐热性和散热性优异。
此外,由于被覆荧光体陶瓷元件5的被覆层7含有无机物,因此能够通过被覆层7将在荧光体陶瓷元件5中产生的热高效传导至外部,散热性优异。此外,也可以高效地反射在荧光体陶瓷元件5被扩散·放射的光。
此外,这种波长转换构件1的制造方法能够简便且工业化地制造具备单片化的荧光体陶瓷元件5的、耐热性、散热性和反射性优异的波长转换构件1。
(变形例)
在以下各图中,对与上述各部对应的构件标以相同的附图标记,省略其详细说明。
图1A~图1E和图3的实施方式通过使用分割刮板10刮取荧光体陶瓷层3的一部分来制作俯视大致矩形的元件配置基材11,而例如也可以如图5A~图5D和图6所示,通过印刷方法制作俯视大致圆形的元件配置基材11。
具体而言,首先,如图5A所示,准备耐热性基板21。
耐热性基板21是不会因煅烧时的高温而变形的基板,可以使用公知或市售的基板。
接着,如图5B所示,通过丝网印刷等印刷方法在耐热性基板21上形成俯视大致圆形和剖视大致矩形的坯体2a。
构成坯体2a的组合物是上述含有无机物的固化性组合物。
接着,如图5C所示,煅烧坯体2a。由此,得到设置在耐热性基板21上的多个荧光体陶瓷元件5。
接着,如图5D和图6所示,将荧光体陶瓷元件5再配置在基材4上。具体而言,将多个荧光体陶瓷元件5自耐热性基板21剥离,沿宽度方向和前后方向隔开间隔配置在基材4上。由此,得到元件配置基材11。
图5A~图5D的实施方式由于通过印刷方法制作坯体2a,因此能够形成俯视大致圆形、俯视大致矩形等所期望的图案的荧光体陶瓷元件5。此外,由于不需要刮取荧光体陶瓷层3,因此能够提高荧光体材料的成品率。
另一方面,图1A~图1E的实施方式由于在基材4上形成多个荧光体陶瓷元件5,因此不需要多个荧光体陶瓷元件5的再配置。因此,能够高效顺利地制造波长转换构件1。
需要说明的是,图2I中以包括1个荧光体陶瓷元件5的方式将基材4、被覆层7和脱模片8a切断,而例如也可以以包括2个以上的荧光体陶瓷元件5的方式将基材4、被覆层7和脱模片8a切断。
实施例
以下列举出实施例进一步对本发明进行详细说明,但本发明不限定于此。此外,在以下记载中使用的配混比率(含有比率)、物性值、参数等具体数值可以替换上述“具体实施方式”中记载的与它们对应的配混比率(含有比率)、物性值、参数等相应记载的上限值(以“以下”、“小于”的方式定义的数值)或下限值(以“以上”、“超过”的方式定义的数值)。
制得由氧化钇颗粒(纯度99.9%、Nippon Yttrium Co.,Ltd.制造)11.34g、氧化铝颗粒(纯度99.9%、住友化学株式会社制造)8.577g和氧化铈颗粒0.087g形成的荧光体材料的粉末。
将所制得的荧光体材料的粉末20g和水溶性粘结剂树脂(“WB4101”、PolymerInovations,Inc制造)以固体成分的体积比例为60:40的方式混合,进一步加入蒸馏水并装入氧化铝制容器,加入直径3mm的氧化锆珠通过球磨机进行24小时湿式混合,由此制得荧光体的原料颗粒的浆料。
接着,通过刮刀法将所制备的浆料流延成型在作为脱模片的PET薄膜8上并干燥,由此形成厚度75μm的坯片2(参照图1A)。然后,将坯片2自PET薄膜8剥离,从坯片2切出20mm×20mm的尺寸。制作2片切出的坯片2,使用热压机对这2片坯片2进行热层压,由此制得坯片层叠体2。
接着,将所制得的坯片层叠体2在电马弗炉中、大气中以1℃/分钟的升温速度加热至1200℃,实施分解去除粘结剂树脂等有机成分的脱粘结剂处理。然后,将坯片层叠体2移至高温真空炉,在约10-3Torr(约0.13Pa)的减压下以5℃/分钟的升温速度加热至1750℃,在该温度下煅烧3小时,由此制得厚度120μm的由Y3Al5O12:Ce形成的荧光体陶瓷层3(荧光体陶瓷片)(参照图1B)。
接着,将荧光体陶瓷层3粘贴在于分割装置(商品名“分割锯”、DISCO公司制造)的分割框上设置的热剥离片4(基材、商品名“REVALPHA31950”、日东电工株式会社制造)的粘合层面(上表面),得到陶瓷层叠体9(参照图1C)。
接着,调节尖端为剖视大致矩形的分割刮板10(尖端的宽度X:0.4mm)的上下方向位置,使得分割刮板10的尖端与热剥离片4的上表面一致。
接着,一边使分割刮板10高速旋转,一边以宽度方向的间隔(Y)和前后方向的间隔分别为3.0mm的方式使分割刮板10相对于陶瓷层叠体9相对移动,由此以网格状刮取荧光体陶瓷层3的一部分(参照图1D)。
由此,得到多个荧光体陶瓷元件5(3.0mm×3.0mm)在热剥离片4上沿前后方向和宽度方向隔开0.4mm的间隔以网格状整齐排列的元件配置基材11(参照图1E和图3)。
接着,准备作为固化性层6的材料的陶瓷墨(商品名“RG12-22”、白色、AIN Co.,Ltd.制造),用刮刀涂布在作为脱模片的PET薄膜8a上,形成厚度220μm的固化性层6。
接着,以荧光体陶瓷元件5与固化性层6相对的方式,将元件配置基材11与固化性层片20隔开间隔沿厚度方向相对配置(参照图2F)。
接着,使元件配置基材11向下侧移动,以0.3MPa的压力按压固化性层6,由此使荧光体陶瓷元件5埋在固化性层6中(参照图2G)。
接着,在90℃下干燥5小时后,通过在150℃下加热固化2小时,形成被覆层7。由此,得到被覆层-元件层叠体13(参照图2H)。
接着,在分割装置内配置被覆层-元件层叠体13。然后,使用尖端为剖视大致矩形的窄刮板19(尖端的宽度Z:0.2mm),将荧光体陶瓷元件5间的宽度方向中央和前后方向中央以贯穿热剥离片4、被覆层7和脱模片8a的厚度方向的方式切断(参照图2I)。即,以形成3.2mm×3.2mm的尺寸的方式切断被覆层-元件层叠体13。由此,将荧光体陶瓷元件5单片化,得到基材层叠波长转换构件14。
接着,将PET薄膜8a自所得基材层叠波长转换构件14剥离,接着,在200℃下将热剥离片4剥离。由此,制得具备1个荧光体陶瓷元件5(3.0mm×3.0mm、厚度120μm)和被覆层7(3.2mm×3.2mm、侧面宽度W:0.1mm、厚度T:100μm)的波长转换构件1(参照图2J)。
需要说明的是,虽然作为本发明的例示实施方式给出了上述技术方案,但这仅仅是例示,不能做限定性解释。本领域技术人员所清楚的本发明的变形例是包括在本发明的保护范围内的。
产业上的可利用性
本发明的波长转换构件及其制造方法可以应用于各种工业产品,例如可以用于白色发光二极管装置等半导体发光装置等。
附图标记说明
1 波长转换构件
3 荧光体陶瓷层
4 基材
5 荧光体陶瓷元件
6 固化性层
7 被覆层
11 元件配置基材
Claims (4)
1.一种波长转换构件的制造方法,其特征在于,该方法包括下述工序:
准备元件配置基材的工序,所述元件配置基材具备基材和在所述基材上沿与所述基材的厚度方向正交的方向隔开间隔配置的多个荧光体陶瓷元件;
使所述多个荧光体陶瓷元件埋在含有无机物的固化性层中的工序;
使所述固化性层固化得到被覆层的工序;以及,
以包括至少1个所述荧光体陶瓷元件的方式将所述被覆层和所述基材沿厚度方向切断的工序。
2.根据权利要求1所述的波长转换构件的制造方法,其特征在于,所述固化性层由陶瓷墨或固化性树脂组合物形成,所述固化性树脂组合物含有无机氧化物颗粒和金属颗粒中的至少1种无机颗粒以及固化性树脂。
3.根据权利要求1所述的波长转换构件的制造方法,其特征在于,所述基材为易剥离性片。
4.一种波长转换构件,其特征在于,其由权利要求1所述的制造方法得到。
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