CN106170856A - 具有连接至半导体元件的可烧结固化糊料的支架和夹子、烧结糊料、生产方法和用途 - Google Patents
具有连接至半导体元件的可烧结固化糊料的支架和夹子、烧结糊料、生产方法和用途 Download PDFInfo
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- CN106170856A CN106170856A CN201580014541.2A CN201580014541A CN106170856A CN 106170856 A CN106170856 A CN 106170856A CN 201580014541 A CN201580014541 A CN 201580014541A CN 106170856 A CN106170856 A CN 106170856A
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- support
- thickener
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- semiconductor element
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Classifications
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Abstract
本发明涉及用于至少一个半导体元件的支架(如引线架)和夹子,该支架和夹子具有至少一个用于联接至该半导体元件的功能表面(10)和多个端子(11)。本发明的特征在于,该支架或该夹子的材料包含金属和用固化(干燥的)烧结糊料(尤其包含银和/或银化合物的烧结糊料)制成的层(12),并且该层被安排在功能表面(10)上,其中,该支架或该夹子与用烧结糊料制成的层(12)形成可以连接至半导体元件的中间产品。通过利用固化烧结糊料的烧结在一个工作步骤中连接至该夹子,该支架和夹子被用于生产具有引线架的封装物(引线架封装件)。
Description
本发明涉及用于至少一个半导体元件的支架,该支架具有至少一个用于联接至该半导体元件的功能表面。本发明还涉及用于至少一个半导体元件的夹子,该夹子具有至少一个用于联接至该半导体元件的功能表面。本发明还涉及用于生产这种支架或这种夹子的方法,也涉及该支架或夹子的用途并且涉及烧结糊料。
例如从DE 10 2009 017 853 A1中已知在介绍中提及的类型的支架。在该已知支架的生产工艺中,烧结糊料最初被涂敷到半导体元件的下侧。接着使该半导体元件与该支架的功能表面接触并且被暂时地固定。接着通过使用糊料将该支架烧结至该半导体元件来实施实际的连接。以此方式,产生了被进一步加工为半导体部件的层式系统。
该支架可以是例如所谓的引线架,并且该半导体元件可以是芯片。
在已知的方法中,在分开的工艺中涂敷烧结材料或焊料。尤其,焊料的使用费用高昂并且增加了工艺和材料成本。
本发明的目的是分别提供用于半导体元件的支架或夹子,该夹子或支架在各自情况下简化了半导体部件的生产。本发明的目的是进一步提供这种支架或夹子的生产方法以及用途和烧结糊料。
根据本发明,此目的在支架方面通过权利要求1的主题实现,并且在夹子方面通过权利要求5的主题实现。在方法方面,此目的通过权利要求9的主题实现,在用途方面通过权利要求12的主题实现并且在烧结糊料方面通过权利要求13的主题实现。
本发明基于以下构思:提供用于至少一个半导体元件的支架,该支架具有至少一个用于联接至该半导体元件的功能表面。根据本发明,支架的材料包含金属。可烧结固化糊料层被安排在功能表面上,该可烧结固化糊料层包含银和/或银化合物以及0.1%至2%的脂肪酸或有机粘结剂。该支架和该层形成可以被连接至半导体元件的中间产品。
该固化糊料包含银和/或银化合物。该糊料进一步包含0.1%至2%的脂肪酸或有机粘结剂。换言之,除了银和/或银化合物,该糊料另外还包含0.1%至2%的脂肪酸或有机粘结剂该固化糊料包含银和/或银化合物,同时也包含0.1%至2%的脂肪酸或有机粘结剂。
例如,该脂肪酸可以是羊脂酸(辛酸)和/或羊蜡酸(癸酸)和/或月桂酸(十二烷酸)和/或肉豆蔻酸(十四烷酸)和/或棕榈酸(十六烷酸)和/或珠光酯酸(十七烷酸)和/或硬脂酸(十八烷酸)和/或花生酸(二十烷酸)和/或山嵛酸(二十二烷酸)和/或木蜡酸(二十四烷酸)。该固化糊料优选地包含羊脂酸(辛酸)和/或月桂酸(十二烷酸)和/或肉豆蔻酸(十四烷酸)和/或棕榈酸(十六烷酸)和/或珠光酯酸(十七烷酸)和/或硬脂酸(十八烷酸)。
该有机粘合剂优选地是比如纤维素衍生物,例如甲基纤维素和/或乙基纤维素和/或乙基甲基纤维素和/或羧基纤维素和/或羟丙基纤维素。
本发明具有的优点是支架和层可以一起生产,并且它们形成可烧结的中间产品。该可烧结的中间产品可以被其他的生产商使用,以便将支架与半导体元件装配,这样使得随后只通过烧结来执行支架与半导体元件之间的连接。已经发现的是,对于支架(或者引线架)来说,与可烧结层一起生产并随后连接至半导体元件是较便宜的。
该支架与由可烧结固化糊料形成的层形成中间产品,该中间产品可以被单独处理,并且可以在时间上或空间上的分开的工艺中被进一步加工。
优选地,该支架具有至少一个端子,另一个可烧结固化糊料层被安排在功能表面的一侧上的端子上,该可烧结固化糊料层包含银和/或银化合物以及0.1%至2%的脂肪酸或有机粘结剂。该层可以被连接至夹子,尤其如权利要求5所述的夹子。此实施例具有的优点是,不仅是该功能表面,该端子或多个端子也可以在一个工作步骤中与该可烧结层一起提供,这样使得生产工艺被进一步地简化。
已经证明,该层的厚度在5μm至100μm之间是有利的,尤其是在5μm至50μm之间。
该层包含粒度从200nm至20μm的银粒子。
在本发明的范围内,披露并要求保护用于连接至半导体元件的夹子以及支架,尤其是如权利要求1所述的支架。该夹子具有与该支架相同的特征,即用于连接至半导体元件的至少一个功能表面,该夹子的材料包含金属。可烧结固化糊料层被安排在功能表面上,该可烧结固化糊料层包含银和/或银化合物以及0.1%至2%的脂肪酸或有机粘结剂。该夹子和该层形成可以被连接至半导体元件的中间产品。所解释的与支架相关的优点也适用于该夹子。
该糊料包含银和/或银化合物。该糊料进一步包含0.1%至2%的脂肪酸或有机粘结剂。换言之,除了银和/或银化合物,该糊料另外还包含0.1%至2%的脂肪酸或有机粘结剂。该固化糊料包含银和/或银化合物,同时也包含0.1%至2%的脂肪酸或有机粘结剂。
例如,该脂肪酸可以是羊脂酸(辛酸)和/或羊蜡酸(癸酸)和/或月桂酸(十二烷酸)和/或肉豆蔻酸(十四烷酸)和/或棕榈酸(十六烷酸)和/或珠光酯酸(十七烷酸)和/或硬脂酸(十八烷酸)和/或花生酸(二十烷酸)和/或山嵛酸(二十二烷酸)和/或木蜡酸(二十四烷酸)。该固化糊料优选地包含羊脂酸(辛酸)和/或月桂酸(十二烷酸)和/或肉豆蔻酸(十四烷酸)和/或棕榈酸(十六烷酸)和/或珠光酯酸(十七烷酸)和/或硬脂酸(十八烷酸)。
该有机粘合剂优选地是比如纤维素衍生物,例如甲基纤维素和/或乙基纤维素和/或乙基甲基纤维素和/或羧基纤维素和/或羟丙基纤维素。
关于该夹子的实施例的优点,参照与该支架相关地披露和描述的优点。
根据本发明的生产用于至少一个半导体元件的支架或用于连接至半导体元件的夹子的方法,是基于被构造(尤其被冲压)并且具有用于连接至半导体元件的功能表面的支架或夹子。将烧结糊料,尤其含有银的烧结糊料,涂敷到功能表面上,并且加热以用于干燥和固化。其结果是,固化的且可烧结的层形成在支架或夹子的功能表面上。以此方式生产出的中间产品在分开的工艺中被连接至半导体元件。
优选地,在涂敷烧结糊料之前,以黏合剂、尤其以银或银化合物涂覆功能表面。可以通过模板印刷方法来涂敷烧结糊料,尤其通过喷涂方法或滴涂方法。
此外,在本发明的范围中披露并要求保护如权利要求1所述的支架和/或如权利要求5所述的夹子用于生产引线架封装件的用途。此外,披露并要求保护用于涂敷到支架上和/或涂敷到夹子上的烧结糊料,其独特之处在于该烧结糊料可以涂敷到如权利要求1至4中的一项所述的支架上和/或涂敷到如权利要求5至8中的一项所述的夹子上。
以下将在示例性实施例的帮助下参照附图来更详细地说明本发明,在附图中:
图1示出了带有涂敷层的支架或引线架的侧视图;
图2示出了带有涂敷的可烧结层的夹子的侧视图;并且
图3示出了带有根据图1和图2的引线架和夹子的半导体元件。
图1示出了根据本发明的一个示例性实施例的支架或引线架的侧视图。该支架是通过本身已知的方法被生产出的冲压件或蚀刻件。该支架形成中间产品,在另一个分开的方法步骤中该支架被连接至半导体元件,例如芯片。为此目的,该支架具有功能表面10,该半导体元件放置在该功能表面上。为了将该半导体元件连接至该支架的功能表面10上,由可烧结的固化糊料组成的层12被涂敷到功能表面10上。层12包含银和/或银化合物和0.1%至0.2%的脂肪酸或有机粘结剂。
为了生产层12,在预备工艺中将烧结糊料涂敷到功能表面10上。然后将烧结糊料干燥。在此情况下,在室温下除去液体成分。固化(即糊料的干燥)以如下方式实施,使得不会出现糊料的完全烧结。由于这个原因,固化的糊料或层12具有剩余的反应性以用于随后实施的烧结工艺。
糊料的干燥优选地在合适的温度、压力、空气湿度、和时长下实施,使得从糊料中最大可能程度地去除溶剂而在干燥后该烧结过程在糊料内部还未完全发生。干燥可以例如在低于200℃的温度下实施,并且更优选地低于150℃,例如在大约120℃的温度下优选地持续3至60分钟的时长。传统的干燥装置可以用于干燥。
带有根据图1的层12的支架从而形成预制件,该预制件作为中间产品被供应至(例如由另一个生产商实施的)其他的生产工艺。该中间产品总体上是稳定的,并且可以用如下方式处理:使其可以被运输以用于进一步加工。这是由于原本潮湿的烧结糊料被固化并且于是在环境温度下是几何学上稳定的。
该层的C-Ag比例在C:Ag=1/1000-2/100的范围中。包含于该层中的银粒子的粒度为从200nm至20μm之间。
图2表示与固化的可烧结糊料(或者相应的层12)一起提供的夹子,类似于根据图1的支架。关于夹子的结构和生产,参照与图1相关的注释。
图3示出了加工后的引线架封装件。换言之,根据图1的引线架以及根据图2的夹子分别作为中间产品被进一步加工以形成根据图3的封装件,尤其在分开的步骤中。为此目的,根据图3的芯片以图3中示出的方式被连接并烧结至引线架和夹子。
烧结旨在指通过加热在避开液相的同时使两个部件连接。
在图3中可以进一步地看到,该引线架具有至少一个端子,该端子联接至该夹子的相应的端子。本发明使用固化烧结糊料来实施,该固化的烧结糊料如根据图1和图2的中间产品的情况下那样来涂敷。在此情况下,该烧结糊料或该固化层12可以被涂敷在引线架的端子11上或夹子的端子11上,从而形成对应的中间产品的一部分。由夹子、芯片或半导体元件以及引线架或支架组成的该层安排在进一步的步骤中与所谓的模具化合物一起封装,这样使得完整的引线封装件被生产出来。
本发明和以上描述的示例性实施例具有的优点是减少了工艺和材料成本。
Claims (13)
1.一种用于至少一个半导体元件的支架,该支架具有用于联接至该半导体元件的至少一个功能表面(10),
其特征在于,
该支架的材料包含金属,并且可烧结的固化糊料的一个层(12)被安排在该功能表面(10)上,该可烧结的固化糊料包含银和/或银化合物以及0.1%-2%的脂肪酸或有机粘结剂,该支架与该层(12)形成能够被连接至该半导体元件的一个中间产品。
2.如权利要求1所述的支架,
其特征在于,
至少一个端子(11),可烧结的固化糊料的另一个层(12)被安排在该功能表面(10)的一侧上的端子(11)上,该可烧结的固化糊料包含银和/或银化合物以及0.1%-2%的脂肪酸或有机粘结剂并且能够连接至一个夹子,尤其如权利要求5所述的夹子。
3.如权利要求1或2所述的支架,
其特征在于,
该层(12)的厚度是从5μm至100μm,尤其是从5μm至50μm。
4.根据以上权利要求之一所述的支架,
其特征在于,
该层(12)包含粒度为从200nm至20μm的银粒子。
5.一种用于连接至半导体元件和支架的夹子,该支架尤其如权利要求1所述的支架,该夹子具有用于连接至该半导体元件的至少一个功能表面(10),
其特征在于,
该夹子的材料包含金属,并且可烧结的固化糊料的一个层(12)被安排在该功能表面(10)上,该可烧结的固化糊料包含银和/或银化合物以及0.1%-2%的脂肪酸或有机粘结剂,该夹子与该层(12)形成能够被连接至该半导体元件的一个中间产品。
6.如权利要求5所述的夹子,
其特征在于,
至少一个端子(11),可烧结的固化糊料的另一个层(12)被安排在该功能表面(10)的一侧上的端子(11)上,该可烧结的固化糊料包含银和/或银化合物以及0.1%-2%的脂肪酸或有机粘结剂并且能够连接至一个支架,尤其如权利要求1所述的支架。
7.如权利要求5或6所述的夹子,
其特征在于,
该层(12)的厚度是从5μm至100μm,尤其是从5μm至50μm。
8.根据权利要求5至7中任一项所述的夹子,
其特征在于,
该层(12)包含粒度为从200nm至20μm的银粒子。
9.一种用于生产用于至少一个半导体元件的支架、或用于连接至半导体元件的夹子的方法,其中
-构造该支架或夹子,并且形成用于连接至该半导体元件的一个功能表面(10),
-将一种烧结糊料,尤其含有银的烧结糊料,涂敷到该功能表面(10)上,并且
-加热该烧结糊料以进行干燥和固化。
10.如权利要求5所述的方法,
其特征在于,
在涂敷该烧结糊料之前,以一种黏合剂,尤其以银或银化合物,涂覆该功能表面(10)。
11.如权利要求5或6所述的方法,
其特征在于,
通过模板印刷方法来涂敷该烧结糊料,尤其通过喷涂方法或滴涂方法。
12.如权利要求1所述的支架和/或如权利要求5所述的夹子用于生产引线架封装件的用途。
13.一种用于涂敷到支架和/或夹子上的烧结糊料,其特征在于,该烧结糊料能够涂敷到根据权利要求1至4中的一项所述的支架上和/或涂敷到根据权利要求5至8中的一项所述的夹子上。
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EP3154079A1 (de) * | 2015-10-08 | 2017-04-12 | Heraeus Deutschland GmbH & Co. KG | Verfahren zum verbinden einer substratanordnung mit einem elektronikbauteil mit verwendung eines auf eine kontaktierungsmaterialschicht aufgebrachten vorfixiermittels, entsprechende substratanordnung und verfahren zu ihrem herstellen |
US10861775B2 (en) | 2018-09-28 | 2020-12-08 | Semiconductor Components Industries, Llc | Connecting clip design for pressure sintering |
US10964628B2 (en) | 2019-02-21 | 2021-03-30 | Infineon Technologies Ag | Clip frame assembly, semiconductor package having a lead frame and a clip frame, and method of manufacture |
US11515244B2 (en) | 2019-02-21 | 2022-11-29 | Infineon Technologies Ag | Clip frame assembly, semiconductor package having a lead frame and a clip frame, and method of manufacture |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1961381A (zh) * | 2004-02-18 | 2007-05-09 | 弗吉尼亚科技知识产权公司 | 用于连接的纳米级金属糊及其使用方法 |
WO2010130235A2 (de) * | 2009-05-11 | 2010-11-18 | Danfoss Silicon Power Gmbh | Verfahren zur kontaktsinterung von bandförmigen kontaktelementen |
CN102131353A (zh) * | 2009-10-05 | 2011-07-20 | Abb研究有限公司 | 连接组件的方法、电路组件的组合体和电路 |
US20140013595A1 (en) * | 2012-07-12 | 2014-01-16 | Infineon Technologies Ag | Methods for producing a bond and a semiconductor module |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008153470A (ja) * | 2006-12-18 | 2008-07-03 | Renesas Technology Corp | 半導体装置および半導体装置の製造方法 |
JP5123633B2 (ja) * | 2007-10-10 | 2013-01-23 | ルネサスエレクトロニクス株式会社 | 半導体装置および接続材料 |
US8828804B2 (en) * | 2008-04-30 | 2014-09-09 | Infineon Technologies Ag | Semiconductor device and method |
US7754533B2 (en) | 2008-08-28 | 2010-07-13 | Infineon Technologies Ag | Method of manufacturing a semiconductor device |
JP2010171271A (ja) | 2009-01-23 | 2010-08-05 | Renesas Technology Corp | 半導体装置およびその製造方法 |
DE102009008926B4 (de) * | 2009-02-13 | 2022-06-15 | Danfoss Silicon Power Gmbh | Verfahren zur Schaffung einer hochtemperatur- und temperaturwechselfesten Verbindung eines Halbleiterbausteins mit einem Verbindungspartner und einer Kontaktlasche unter Verwendung eines temperaturbeaufschlagenden Verfahrens |
US8637379B2 (en) | 2009-10-08 | 2014-01-28 | Infineon Technologies Ag | Device including a semiconductor chip and a carrier and fabrication method |
DE102010044329A1 (de) * | 2010-09-03 | 2012-03-08 | Heraeus Materials Technology Gmbh & Co. Kg | Kontaktierungsmittel und Verfahren zur Kontaktierung elektrischer Bauteile |
JP5812090B2 (ja) * | 2011-03-10 | 2015-11-11 | 富士電機株式会社 | 電子部品および電子部品の製造方法 |
DE102011083911A1 (de) | 2011-09-30 | 2013-04-04 | Robert Bosch Gmbh | Elektronische Baugruppe mit hochtemperaturstabilem Substratgrundwerkstoff |
US10170645B2 (en) | 2011-11-04 | 2019-01-01 | Heraeus Precious Metals North America Conshohocken Llc | Organic vehicle for electroconductive paste |
DE102012207652A1 (de) | 2012-05-08 | 2013-11-14 | Robert Bosch Gmbh | Zweistufiges Verfahren zum Fügen eines Halbleiters auf ein Substrat mit Verbindungsmaterial auf Silberbasis |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1961381A (zh) * | 2004-02-18 | 2007-05-09 | 弗吉尼亚科技知识产权公司 | 用于连接的纳米级金属糊及其使用方法 |
WO2010130235A2 (de) * | 2009-05-11 | 2010-11-18 | Danfoss Silicon Power Gmbh | Verfahren zur kontaktsinterung von bandförmigen kontaktelementen |
CN102131353A (zh) * | 2009-10-05 | 2011-07-20 | Abb研究有限公司 | 连接组件的方法、电路组件的组合体和电路 |
US20140013595A1 (en) * | 2012-07-12 | 2014-01-16 | Infineon Technologies Ag | Methods for producing a bond and a semiconductor module |
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