WO2015144833A1 - Träger und clip jeweils mit sinterbarer, verfestigter paste zur verbindung mit einem halbleiterelement, entsprechende sinterpaste und entsprechendes herstellungsverfahren und verwendung - Google Patents
Träger und clip jeweils mit sinterbarer, verfestigter paste zur verbindung mit einem halbleiterelement, entsprechende sinterpaste und entsprechendes herstellungsverfahren und verwendung Download PDFInfo
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- WO2015144833A1 WO2015144833A1 PCT/EP2015/056596 EP2015056596W WO2015144833A1 WO 2015144833 A1 WO2015144833 A1 WO 2015144833A1 EP 2015056596 W EP2015056596 W EP 2015056596W WO 2015144833 A1 WO2015144833 A1 WO 2015144833A1
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- clip
- carrier
- semiconductor element
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- layer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 238000005245 sintering Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910052709 silver Inorganic materials 0.000 claims abstract description 23
- 239000004332 silver Substances 0.000 claims abstract description 23
- 229940100890 silver compound Drugs 0.000 claims abstract description 17
- 150000003379 silver compounds Chemical class 0.000 claims abstract description 17
- 239000013067 intermediate product Substances 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 18
- 239000011230 binding agent Substances 0.000 claims description 16
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 16
- 239000000194 fatty acid Substances 0.000 claims description 16
- 229930195729 fatty acid Natural products 0.000 claims description 16
- 150000004665 fatty acids Chemical class 0.000 claims description 16
- 239000002245 particle Substances 0.000 claims description 8
- 238000005507 spraying Methods 0.000 claims description 2
- 239000002318 adhesion promoter Substances 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- KEMQGTRYUADPNZ-UHFFFAOYSA-N heptadecanoic acid Chemical compound CCCCCCCCCCCCCCCCC(O)=O KEMQGTRYUADPNZ-UHFFFAOYSA-N 0.000 description 16
- VKOBVWXKNCXXDE-UHFFFAOYSA-N icosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCC(O)=O VKOBVWXKNCXXDE-UHFFFAOYSA-N 0.000 description 10
- 238000001035 drying Methods 0.000 description 6
- 239000000543 intermediate Substances 0.000 description 5
- 235000021355 Stearic acid Nutrition 0.000 description 4
- WLGSIWNFEGRXDF-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O.CCCCCCCCCCCC(O)=O WLGSIWNFEGRXDF-UHFFFAOYSA-N 0.000 description 4
- KYYWBEYKBLQSFW-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCCCC(O)=O KYYWBEYKBLQSFW-UHFFFAOYSA-N 0.000 description 4
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 4
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 4
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 4
- ZTUXEFFFLOVXQE-UHFFFAOYSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCC(O)=O ZTUXEFFFLOVXQE-UHFFFAOYSA-N 0.000 description 4
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- HABLENUWIZGESP-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O.CCCCCCCCCC(O)=O HABLENUWIZGESP-UHFFFAOYSA-N 0.000 description 2
- AGDANEVFLMAYGL-UHFFFAOYSA-N docosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCCCCCCCCCC(O)=O AGDANEVFLMAYGL-UHFFFAOYSA-N 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 239000001761 ethyl methyl cellulose Substances 0.000 description 2
- 235000010944 ethyl methyl cellulose Nutrition 0.000 description 2
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 2
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 2
- 229920000609 methyl cellulose Polymers 0.000 description 2
- 239000001923 methylcellulose Substances 0.000 description 2
- RQFLGKYCYMMRMC-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCCCCCC(O)=O RQFLGKYCYMMRMC-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- CBYCSRICVDBHMZ-UHFFFAOYSA-N tetracosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCCCCCCCCCCCC(O)=O CBYCSRICVDBHMZ-UHFFFAOYSA-N 0.000 description 2
- 239000007767 bonding agent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
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- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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- H01L23/495—Lead-frames or other flat leads
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- H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
- H01L2224/27318—Manufacturing methods by local deposition of the material of the layer connector in liquid form by dispensing droplets
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- H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
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- H01L2224/2741—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form
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- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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Definitions
- the invention relates to a carrier for at least one semiconductor element which has at least one functional surface for connection to the semiconductor element.
- the invention further relates to a clip for at least one semiconductor element having at least one functional surface for connection to the semiconductor element.
- the invention further relates to a method for producing such a carrier or such a clip, and the
- a carrier of the aforementioned type is known for example from DE 10 2009 017 853 AI. In the production of the known carrier is first the
- Sintered paste applied to the underside of the semiconductor element is brought into contact with the functional surface of the carrier and provisionally fixed.
- the actual connection is then carried out by sintering the carrier with the semiconductor element through the paste. This will be a
- the carrier may be a so-called leadframe and the semiconductor element may be a chip.
- the sintered material or solder is applied in a separate process.
- solder in particular is complex and increases the process and material costs.
- the invention has for its object to provide a carrier or clip respectively for a semiconductor element, each of the production of a
- the invention has for its object to provide a manufacturing method for such a carrier or clip and a use and a sintering paste. According to the invention, this object is achieved by looking at the carrier
- the invention is based on the idea of a carrier for at least one
- the material of the carrier comprises a metal.
- a layer of a sinterable, solidified paste is arranged, the silver and / or a
- Silver compound and 0, 1% - 2% fatty acids or organic binder form an intermediate product which is connectable to the semiconductor element.
- the solidified paste contains silver and / or a silver compound.
- the paste contains 0, 1% - 2% fatty acids or organic binders.
- the paste contains in addition to silver and / or a silver compound additionally 0, 1% - 2% fatty acids or organic binders.
- the solidified paste contains silver and / or a silver compound as well as 0, 1% - 2%
- fatty acids it may, for. B. caprylic acid (octanoic acid) and / or
- Capric acid decanoic acid and / or lauric acid (dodecanoic acid) and / or myristic acid (tetradecanoic acid) and / or palmitic acid (hexadecanoic acid) and / or margaric acid (heptadecanoic acid) and / or stearic acid
- the solidified paste preferably contains caprylic acid (octanoic acid) and / or lauric acid (dodecanoic acid) and / or myristic acid (tetradecanoic acid) and / or palmitic acid (hexadecanoic acid) and / or margaric acid (heptadecanoic acid) and / or stearic acid (octadecanoic acid).
- caprylic acid octanoic acid
- lauric acid diodecanoic acid
- myristic acid tetradecanoic acid
- palmitic acid hexadecanoic acid
- margaric acid heptadecanoic acid
- stearic acid octadecanoic acid
- the organic binder is preferably a polymer such as cellulose derivatives, for example methylcellulose and / or ethylcellulose and / or ethylmethylcellulose and / or carboxycellulose and / or hydroxypropylcellulose.
- the invention has the advantage that the carrier and the layer can be produced together and form a sinterable intermediate.
- the sinterable intermediate can be used by another manufacturer to equip the carrier with the semiconductor element, so that then only the compound by sintering between the carrier and the
- the carrier forms an intermediate product which can be handled independently and can be further processed in a temporally or spatially separate process.
- the carrier has at least one connection, wherein on the connection on the side of the functional surface, a further layer of sinterable, solidified paste is arranged, the silver and / or a
- Silver compound and 0.1% - contains 2% fatty acids or organic binder.
- the layer can be connected to a clip, in particular a clip according to claim 5.
- This embodiment has the advantage that not only the functional surface but also the connection or a plurality of connections can be provided with the sinterable layer in one operation
- the thickness of the layer from 5 ⁇ to 100 ⁇ , in particular from 5 ⁇ to 50 ⁇ .
- the layer may contain silver particles with a particle size of 200 nm to 20 ⁇ .
- a clip for connection to a
- the clip has the same features as the carrier, ie at least one functional surface for connection to the semiconductor element, wherein the material of the clip comprises a metal.
- a layer of a sinterable, solidified paste is arranged, which contains silver and / or a silver compound and 0, 1% - 2% fatty acids or organic binders. The clip and the layer form an intermediate with the
- the paste contains silver and / or a silver compound.
- the paste contains 0.1% - 2% fatty acids or organic binders.
- the paste contains in addition to silver and / or a silver compound additionally 0, 1% - 2% fatty acids or organic binders.
- the solidified paste contains silver and / or a silver compound and 0, 1% - 2% fatty acids or organic binders.
- fatty acids it may, for. B. caprylic acid (octanoic acid) and / or
- Capric acid decanoic acid and / or lauric acid (dodecanoic acid) and / or myristic acid (tetradecanoic acid) and / or palmitic acid (hexadecanoic acid) and / or margaric acid (heptadecanoic acid) and / or stearic acid
- the solidified paste preferably contains caprylic acid (octanoic acid) and / or lauric acid (dodecanoic acid) and / or myristic acid (tetradecanoic acid) and / or palmitic acid (hexadecanoic acid) and / or margaric acid (heptadecanoic acid) and / or stearic acid (octadecanoic acid).
- caprylic acid octanoic acid
- lauric acid diodecanoic acid
- myristic acid tetradecanoic acid
- palmitic acid hexadecanoic acid
- margaric acid heptadecanoic acid
- stearic acid octadecanoic acid
- the organic binder is preferably a polymer such as cellulose derivatives, for example methylcellulose and / or ethylcellulose and / or ethylmethylcellulose and / or carboxycellulose and / or
- the inventive method for producing the carrier for at least one semiconductor element or the clip for connection to a semiconductor element based on the fact that the carrier or the clip structured, in particular stamped and having a functional surface for connection to the semiconductor element.
- a sintering paste, in particular a silver-containing sintering paste is applied to the functional surface and heated to dry out and solidify. As a result, a solidified and sinterable layer on the
- the functional surface is coated before the application of the sintering paste with a bonding agent, in particular with silver or a silver compound.
- the sintering paste can be applied by a stencil printing method, in particular by a spraying method or a dispensing method.
- the use of the carrier according to claim 1 and / or of the clip according to claim 5 for the production of a leadframe package is disclosed and claimed within the scope of the invention.
- a sintering paste for application to a carrier and / or on a clip is disclosed and claimed, which is characterized in that it can be applied to the carrier according to claim 1 to 4 and / or on the clip according to claim 5 to 8.
- FIG. 1 shows a side view of a carrier or leadframes with applied
- Figure 2 is a side view of a clip with applied sinterable layer
- FIG. 3 shows a semiconductor component with a leadframe and a clip according to FIGS. 1, 2.
- Figure 1 shows a side view of a carrier or leadframes according to an embodiment of the invention.
- the carrier is a Punching or etching part, which is produced by methods known per se.
- the carrier forms an intermediate, which in another separate
- Process step with a semiconductor element for example.
- a chip is connected.
- the carrier has a functional surface 10, on which the semiconductor element is placed.
- a layer 12 is applied to the functional surface 10, which consists of a sinterable, solidified paste.
- the layer 12 contains silver and / or a silver compound and 0.1% -0.2% fatty acid or organic binder.
- a sintering paste is applied to the functional surface 10 in a preliminary process.
- the sintering paste is then dried. In this case, the liquid at room temperature components are removed.
- the solidification, i. the drying of the paste takes place in such a way that the paste does not completely sinter. Therefore, the solidified paste or the layer 12 has a residual reactivity for the subsequent sintering process.
- the drying of the paste is preferably carried out at a temperature, a pressure, a humidity and for a duration which are suitable for removing the solvents from the paste as far as possible, but without the sintering processes within the paste having been completed after drying.
- the drying can be carried out, for example, at temperatures below 200 ° C., and more preferably below 150 ° C., for example at about 120 ° C. for a period of preferably 3 to 60 minutes.
- For drying can usual
- Drying equipment can be used.
- the carrier with the layer 12 of Figure 1 thus forms a preform, which is supplied as an intermediate product to the further manufacturing process, for example.
- the intermediate product is stable overall and so manageable that it can be transported for further processing. This is because the originally moist sintering paste solidifies and is dimensionally stable at ambient temperature.
- FIG. 2 shows a clip which, like the carrier according to FIG. 1, is provided with a solidified, sinterable paste or a corresponding layer 12.
- FIG. 3 shows the leadframe package after processing.
- the leadframe according to FIG. 1 and the clip according to FIG. 2 are each further processed as an intermediate product to the package according to FIG. 3, specifically in a separate step.
- the chip according to FIG. 3 is connected to the leadframe and the clip in the manner shown in FIG. 3 and sintered.
- Sintering is understood to mean the joining of two components by heating, bypassing the liquid phase.
- the leadframe has at least one connection which is connected to a corresponding connection of the clip.
- the invention is carried out by a solidified sintered paste, as in the
- Sintering paste or the solidified layer 12 may be applied either on the terminal 11 of the lead frame or the terminal 11 of the clip and thus form part of the respective intermediate product.
- the layer arrangement of clip, chip or semiconductor element and leadframe or carrier is potted in a further step with a so-called mold compound, so that the complete
- Lead package is produced.
- the invention or the embodiments described above have the advantage that the process and material costs are reduced.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Die Bonding (AREA)
- Conductive Materials (AREA)
- Powder Metallurgy (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016558344A JP6445584B2 (ja) | 2014-03-26 | 2015-03-26 | 半導体素子への接続のための焼結可能な固化したペーストをそれぞれ有しているキャリアおよびクリップ、対応する焼結用ペースト、ならびに対応する製造方法および使用 |
CN201580014541.2A CN106170856A (zh) | 2014-03-26 | 2015-03-26 | 具有连接至半导体元件的可烧结固化糊料的支架和夹子、烧结糊料、生产方法和用途 |
KR1020167029739A KR102025212B1 (ko) | 2014-03-26 | 2015-03-26 | 각각 반도체 소자에 접속되기 위한 소결가능한 응고된 페이스트를 가진 캐리어 및 클립, 대응하는 소결용 페이스트, 및 대응하는 제조 방법 및 용도 |
EP15713177.2A EP3123500A1 (de) | 2014-03-26 | 2015-03-26 | Träger und clip jeweils mit sinterbarer, verfestigter paste zur verbindung mit einem halbleiterelement, entsprechende sinterpaste und entsprechendes herstellungsverfahren und verwendung |
US15/129,250 US10347566B2 (en) | 2014-03-26 | 2015-03-26 | Carrier and clip each having sinterable, solidified paste for connection to a semiconductor element, corresponding sintering paste, and corresponding production method and use |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014104272.7 | 2014-03-26 | ||
DE102014104272.7A DE102014104272A1 (de) | 2014-03-26 | 2014-03-26 | Träger und Clip jeweils für ein Halbleiterelement, Verfahren zur Herstellung, Verwendung und Sinterpaste |
Publications (1)
Publication Number | Publication Date |
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WO2015144833A1 true WO2015144833A1 (de) | 2015-10-01 |
Family
ID=52779646
Family Applications (1)
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PCT/EP2015/056596 WO2015144833A1 (de) | 2014-03-26 | 2015-03-26 | Träger und clip jeweils mit sinterbarer, verfestigter paste zur verbindung mit einem halbleiterelement, entsprechende sinterpaste und entsprechendes herstellungsverfahren und verwendung |
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US (1) | US10347566B2 (de) |
EP (1) | EP3123500A1 (de) |
JP (1) | JP6445584B2 (de) |
KR (1) | KR102025212B1 (de) |
CN (1) | CN106170856A (de) |
DE (1) | DE102014104272A1 (de) |
WO (1) | WO2015144833A1 (de) |
Cited By (1)
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EP3940758A3 (de) * | 2015-10-08 | 2022-08-10 | Heraeus Deutschland GmbH & Co. KG | Verfahren zum sinterverbinden einer substratanordnung mit einem elektronikbauteil mit verwendung eines auf eine sinterkontaktierungsmaterialschicht aufgebrachten vorfixiermittels, entsprechende substratanordnung und verfahren zu ihrer herstellung |
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TWI689020B (zh) * | 2014-12-17 | 2020-03-21 | 美商阿爾發金屬化工公司 | 用於晶粒及夾扣附著之方法 |
US10861775B2 (en) | 2018-09-28 | 2020-12-08 | Semiconductor Components Industries, Llc | Connecting clip design for pressure sintering |
US10964628B2 (en) | 2019-02-21 | 2021-03-30 | Infineon Technologies Ag | Clip frame assembly, semiconductor package having a lead frame and a clip frame, and method of manufacture |
US11515244B2 (en) | 2019-02-21 | 2022-11-29 | Infineon Technologies Ag | Clip frame assembly, semiconductor package having a lead frame and a clip frame, and method of manufacture |
US11894347B2 (en) * | 2019-08-02 | 2024-02-06 | Semiconductor Components Industries, Llc | Low stress asymmetric dual side module |
US11469163B2 (en) * | 2019-08-02 | 2022-10-11 | Semiconductor Components Industries, Llc | Low stress asymmetric dual side module |
EP3792962A1 (de) * | 2019-09-12 | 2021-03-17 | Infineon Technologies AG | Verfahren zur kontrolle eines prozesses zur herstellung einer sinterbaren verbindungsschicht mittels photometrischer messungen |
JP7404208B2 (ja) | 2020-09-24 | 2023-12-25 | 株式会社東芝 | 半導体装置 |
US11938543B2 (en) * | 2021-04-09 | 2024-03-26 | Heraeus Deutschland GmbH & Co. KG | Silver sintering preparation and the use thereof for the connecting of electronic components |
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- 2015-03-26 EP EP15713177.2A patent/EP3123500A1/de not_active Withdrawn
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Also Published As
Publication number | Publication date |
---|---|
EP3123500A1 (de) | 2017-02-01 |
KR102025212B1 (ko) | 2019-09-25 |
US10347566B2 (en) | 2019-07-09 |
JP2017511601A (ja) | 2017-04-20 |
KR20160139006A (ko) | 2016-12-06 |
US20170117209A1 (en) | 2017-04-27 |
JP6445584B2 (ja) | 2018-12-26 |
DE102014104272A1 (de) | 2015-10-01 |
CN106170856A (zh) | 2016-11-30 |
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