CN105849901A - 用于制造芯片模块的方法 - Google Patents

用于制造芯片模块的方法 Download PDF

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Publication number
CN105849901A
CN105849901A CN201480071312.XA CN201480071312A CN105849901A CN 105849901 A CN105849901 A CN 105849901A CN 201480071312 A CN201480071312 A CN 201480071312A CN 105849901 A CN105849901 A CN 105849901A
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contact
chip
carrier substrates
material layer
contact material
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CN105849901B (zh
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加西姆·阿兹达什
托尔斯滕·托伊奇
里卡多·格尔哈尔
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Pac Tech Packaging Technologies GmbH
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Pac Tech Packaging Technologies GmbH
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Abstract

本发明涉及一种用于制造芯片模块(72，73，89，90)的方法，所述芯片模块具有载体衬底(30，81)和至少一个设置在载体衬底上的芯片(33)以及用于连接芯片连接面(34)与设置在芯片模块的接触侧(56)上的连接接触部(69，70，71)的接触导体装置(45)，其中芯片以其设有芯片连接面的前侧固定在载体衬底上并且后续地通过将载体衬底的接触材料层(31，80)结构化来构成接触导体装置。

Description

用于制造芯片模块的方法
技术领域
本发明涉及一种用于制造芯片模块的方法，所述芯片模块具有载体衬底和至少一个设置在载体衬底上的芯片以及用于连接芯片连接面与设置在芯片模块的接触侧上的连接接触部的接触导体装置，其中芯片以其设有芯片连接面的前侧固定在载体衬底上并且后续通过对载体衬底的接触材料层结构化实现接触导体装置的构成。
背景技术
专业术语经常也称作“芯片封装(chip packages)”的芯片模块原则上具有设有接触导体装置的载体衬底和以受保护的方式容纳在芯片壳体中的芯片，所述芯片经由其芯片连接面与接触导体装置接触。接触导体装置在此基本上具有下述目的：构成连接接触部的适合用于外部接触芯片模块的外部的装置，其中连接接触部相互间具有比芯片连接面更大的间距以及更大的接触面，以便简化外部接触芯片模块。
尤其，借助于接触导体装置能够进行对其他芯片模块或电路板的连接接触部布置的调整，使得芯片模块无需重新布线就能够与其他芯片模块或电路板接触。因此，接触导体装置也能够理解为芯片模块的集成的“重新布线(Umverdrahtung)”，所述接触导体装置使得不必在彼此待接触的芯片模块之间进行外部的重新布线。外部的连接接触部的特殊布局或特殊的、将芯片模块个体化的分布也经常称作所谓的“足迹(footprint)”。
用于制造芯片模块的已知的方法例如提出，使用由介电材料构成的衬底作为芯片载体，所述衬底设有用于构成“内部的重新布线”的接触导体装置，其中在制造接触导体装置之后芯片在芯片载体上的接触和后续在芯片载体上构成容纳芯片的芯片壳体通过以下方式进行，使得芯片被所谓的“模”包围，所述模以液体状态施加到芯片上并且在硬化之后构成用于芯片的意图进行保护的芯片壳体。
发明内容
本发明的目的在于，提出一种方法，所述方法可实现显著简化芯片模块的制造并且尤其能够以低的成本耗费实现具有大批量的芯片模块的工业制造。
为了实现该目的，根据本发明的方法具有权利要求1所述的特征。
在根据本发明的方法中，芯片以其设有芯片连接面的前侧固定在载体衬底的接触材料层上。在完成用于将芯片定位在载体衬底上的固定之后，通过将载体衬底的接触材料结构化而构成接触导体装置。因此省弃提供已经设有接触导体装置的芯片载体。更确切地说，具有将芯片模块个体化的足迹的接触导体装置的构成能够连同芯片模块的制备一起进行。
因此，与先前探讨的已知的方法不同，在根据本发明的用于制造芯片模块的方法中，一方面，在构成接触导体装置之前将芯片设置在载体衬底上。另一方面，通过以下方式构成接触导体装置：将由接触材料形成的载体衬底结构化。
优选地，将芯片固定在载体衬底上通过以下方式进行：芯片以其设有芯片连接面的前侧设置在载体衬底的接触材料层的粘附的覆层上。由于载体衬底的粘附的覆层，例如能够放弃：在载体衬底中等设有用于限定芯片在载体衬底上的位置的凹部。因此，载体衬底能够尤其简单地构造成具有平坦的表面。
特别有利的是，载体衬底由接触材料薄膜形成，所述接触材料薄膜可实现由接触材料形成的载体衬底的尤其薄的设计方案。此外，用于构成载体衬底的接触材料薄膜能够提供作为连续材料，由此简化大批量自动化地流水线制造芯片模块，因为接触材料薄膜同时能够用作为用于在芯片模块的制造工艺中以时钟脉冲的方式向前运动的连续传送带。
特别有利的是，将已经设有粘附的覆层的接触材料薄膜用于载体衬底，使得不需要在单独的方法步骤中在用芯片装配载体衬底之前施加粘附的覆层。
当通过结构化载体衬底以与芯片连接面叠合的方式构成接触凹部时，能够以尤其简单的类型和方式构成连接接触部，所述连接接触部建立接触导体装置和芯片连接面之间的导电的连接，所述接触凹部为了将芯片连接面与接触导体装置接触而用接触材料填充。
连接接触部例如能够通过以下方式构成：使用焊料作为接触材料，所述焊料施加到接触凹部中。焊料的这种施加例如能够借助以下方法进行，其中熔融的焊料沉积被抛到借助于接触凹部接近的芯片连接面上。
将接触材料引入到接触凹部中的另一可行性在于，将接触材料通过沉积方法引入到接触凹部中，其中原则上既考虑电镀沉积方法也考虑无电流沉积方法，其中接触材料优选通过自动催化的沉积、即例如通过镍和/或金的沉积进行。为了改进在以自动催化的方式沉积的金属和芯片连接面之间的粘附，在此，能够有利地用锌酸盐或者还有钯以电解的方式加载连接面，以便实施芯片连接面的“种晶(Bekeimung)”。
替选于通过在接触材料层中构成接触凹部和用接触材料填充接触凹部而将芯片连接面与载体衬底进行接触，其中通过将接触材料层结构化而构成接触凹部，在构成接触导体装置之前也能够将芯片连接面与接触材料层与接触材料层的结构化无关地进行接触。
优选地，为了将芯片连接面与接触材料层进行接触，将设有接触凸起的芯片连接面抵靠于接触材料层，并且后续通过熔化所述接触凸起而实现芯片连接面与接触材料层的连接。在此，将芯片固定在载体衬底上也能够与构成相对于接触连接层的连接接触部同时进行。
特别有利的是，借助于激光加载芯片或接触材料层来熔融接触凸起。
在所述方法的尤其优选的实施方式中，在构成接触导体装置之前，为了构成包封芯片的包覆材料层而将包覆材料施加到载体衬底上。由此，不仅构成用于芯片的壳体。更确切地说，在构成用于芯片的壳体同时实现载体衬底的机械稳定，使得接触导体装置的后续的构成通过对载体衬底的接触材料进行结构化而能够无需用于载体衬底单独的机械的支撑装置实现。
尤其，当包覆材料作为包覆材料层施加到芯片上使得芯片夹层状地设置在包覆材料层和载体衬底之间并且包覆材料层随后在用于构成包围载体衬底的层压结构的层压过程中与载体衬底连接时，包覆材料层才形成加固载体衬底的支撑装置，使得即使在载体衬底构成为薄膜材料的情况下也能够加工载体衬底来结构化接触材料层，而载体衬底的柔性不会使加工变得困难。
当在所述方法的优选的实施方式中包覆材料层从其上侧开始设有至少一个接触凹部时，能够产生包覆材料层与到载体衬底的接触导体装置的直接接触的穿通接触部，所述接触凹部为了在接触材料层上构成接触面而露出载体衬底的接触材料。
接触凹部能够为了构成作为接触柱构成的穿通接触部而用接触材料填充，或者使用通过沉积方法引入到接触凹部中的接触材料以构成接触柱。
当包覆材料层从其上侧开始为了露出芯片背侧而以剥离的方式加工材料使得芯片背侧和接触柱齐平地设置在通过加工构成的包覆材料表面中时，芯片模块的尤其薄的构成方案是可行的。
优选地，后续设有接触材料层的基础金属化部能够施加到芯片背侧上和施加到包覆材料表面和接触柱上，以便芯片背侧与设置在芯片前侧上的接触导体装置导电地连接，使得芯片背侧可用作为用于电场的连接面。
同时或替选地，能够经由接触材料层从芯片背侧至接触导体装置进行工艺热的导出，使得根据本发明的方法尤其适合用于制造功率模块。
接触导体装置能够被结构化以构成芯片背侧接触导体装置。
与在包覆材料层的以预先剥离材料的方式加工的表面上构成基础金属化部不同，基础金属化部也能够在构成包覆材料层中的接触凹部之前已经施加到包覆材料层的表面上，并且后续地将接触材料施加到基础金属化部上并且将其结构化以构成芯片背侧接触导体装置。
基于接触材料层的这种结构化，为了构成包覆材料层中的穿通接触部，包覆材料层能够从其表面开始设有至少一个接触凹部，所述接触凹部为了构成载体衬底的接触材料层上的接触面而露出接触材料，并且后续地接触凹部为了构成与接触柱的穿通接触部而能够由接触材料填充。
为了接触芯片背侧特别有利的是，芯片背侧首先通过用激光辐射加载包覆材料而露出，并且后续地将接触材料沉积到芯片背侧上以形成在芯片背侧和芯片背侧接触层之间的接触。
附图说明
下面参考附图阐述芯片模块的制造的不同的变型形式。
附图示出：
图1至13示出在依次的方法步骤中根据所述方法的第一实施方式制造芯片模块；
图14至21示出在不同的依次的方法步骤中根据所述方法的一个变型形式制造芯片模块；
图22和23示出经由接触凸起在芯片和载体衬底之间构成连接接触部；
图24示出在将接触材料层结构化之前的芯片模块的层压结构；
图25示出将接触材料层结构化以构成芯片模块；
图26示出在将接触材料层结构化之前的芯片模块的层压结构；
图27示出将接触材料层结构化以构成芯片模块。
具体实施方式
图1作为用于执行所述方法的初始基础示出提供具有由接触材料31形成的、在当前情况下构成为铜薄膜的金属薄膜的载体衬底30。载体衬底30设有粘附的覆层32，所述覆层例如能够构成为热活化的环氧树脂。然而，也可想象的是：覆层构成为也与活化无关的粘附的层，所述层能够为了处理或提供载体薄膜而设有剥离纸等，使得载体薄膜例如也能够已经以滚筒形式、即卷起的方式被保持。
如图2示出的那样，在开始所述方法时设置至少一个、在当前情况下为多个芯片33，所述芯片以其向下指向的芯片连接面34设置在载体衬底30上，其中通过粘附的覆层32将芯片33以定位的方式固定在载体衬底30上。
随后，将优选由主要具有环氧树脂的材料混合物构成的包覆材料层35设置在芯片33上，使得芯片33从现在起夹层状地容纳在载体衬底30和包覆材料层35之间。在现在接着的层压步骤中，包覆材料层35在压力和温度的同时作用下抵靠于载体衬底30，其中包覆材料层35的材料由芯片33逼出，结果使得如图3中示出的那样，在结束所述层压步骤之后芯片33以嵌入的方式容纳在包覆材料层35中，使得尤其芯片33的芯片背侧36通过包覆材料层35的材料覆盖。包覆材料层35的材料在其成分方面选择为，使得包覆材料的热膨胀系数尽可能地近似载体衬底30的接触材料31的热膨胀系数。这例如能够通过以下方式实现：包覆材料的环氧基作为填充剂掺入足够量的氧化硅，由此例如可达到在7K-1至8K-1的范围中的热膨胀系数，所述热膨胀系数与铜的热膨胀系数相差不远，所述铜优选是接触材料31的主要组成部分并且所述铜具有大约16K-1的热膨胀系数，使得在包覆材料层35硬化之后必须预期在包覆材料层35和载体衬底30之间的脱层。更确切地说，包覆材料35的也在硬化之后剩余的柔性是足够的，以便能够补偿膨胀系数方面的差异。
通过在当前的情况下通过粘附的覆层32进行的层压过程期间固定芯片33，防止了在包覆材料35硬化期间发生芯片33在载体衬底30上的位置变化。
如图4示出的那样，在包覆材料层的材料硬化之后从包覆材料层35的上侧37开始，构成包覆材料层35中的接触凹部38，所述接触凹部为了构成内部的接触面39而露出载体衬底30的接触材料31。优选地，能够通过用激光辐射加载包覆材料层35的上侧37来实现接触凹部38的构成。
随后，如图5中示出的那样，实现用接触材料40填充接触凹部38，所述接触材料例如能够以自动催化的方式沉积到接触面39上，其中优选在将接触材料40沉积到接触面39上之前能够用例如锌酸盐或钯进行接触面39的种晶，以便改进在沉积到接触面39上的接触材料40和接触面39之间的粘附。优选地，选择与接触材料31相符的、至少主要具有铜的材料成分作为接触材料40。
随后，如图6中示出的那样，以剥离材料的方式加工包覆材料层35，结果使得在由此产生的包覆材料表面41中通过接触材料40在接触凹部38中构成的接触材料柱42的表面和芯片背侧36齐平地设置在包覆材料表面41中。在此，能够同时实现芯片33的打薄、即芯片33的高度的减少。
在后续的方法步骤中，优选在图7中示出的基础金属化部44预先构成在包覆材料表面41上之后，实现在图8中示出的接触材料层43在包覆材料层35上的构成，其中优选选择铜或铜合金作为接触材料层43的接触材料。中间金属化部44的构成例如能够通过将基础金属化部44的材料沉积到包覆材料表面41上来进行，例如通过喷镀钛/铜合金来进行。随后，接触材料层43能够通过沉积施加到基础金属化部44上，其中沉积能够选择性地以电镀或者还有自动催化的方式进行。
为了构成在图9中示出的芯片背侧接触导体装置51，优选对施加到包覆材料层35上的接触材料层43进行光刻结构化，使得芯片背侧接触导体装置51在当前的情况下具有两个接触导体52、53，所述接触导体分别连接芯片背侧36与接触柱42。
为了构成通过将载体衬底30结构化产生的并且在图12中示出的接触导体装置45，从现在起，如从图10和11的顺序明确的那样，首先在第一光刻方法步骤中进行载体衬底30的加工，使得一方面构成接触导体46、47、48，并且另一方面构成在载体衬底30中的接触凹部49。优选地，补充于紧接着移除载体衬底30的接触材料31以构成接触凹部49的光刻方法，还对芯片连接面34进行激光加载，以便表面地清洁所述芯片连接面、即尤其移除粘附的覆层32的可能剩余的残留物。然后，优选通过以自动催化的方式沉积接触材料50构成将接触导体46、47、48与芯片连接面34连接的连接接触部68，所述接触材料优选由铜或铜合金构成并且所述接触材料此外优选无电流地沉积到首先用锌酸盐或钯种晶的芯片连接面34上。
基于在图11中示出的并且在第一光刻方法步骤中构成的接触导体46、47、48，完成在图12中示出的接触导体装置45进而在第二光刻方法步骤中构成基于在图1中示出的载体衬底30制成的芯片模块72，其中由接触导体46和48形成连接接触部69、70和71。在此，连接接触部69经由接触柱42和接触导体52或53能够实现对芯片背侧36进行接触并且连接接触部70、71能够实现对芯片连接面34进行接触。
如图12和13的概览示出的那样，随后，芯片模块72的背侧57和连接接触侧56设有优选由环氧树脂形成的钝化部58、59，其中在外接触侧56的钝化部58中构成露出接触面61的接触凹部60，使得焊料凸块62能够施加到接触面61上，所述焊料凸块能够实现用于可能的外部接触芯片模块72的接触部位。
以图14至21的顺序示出所述方法的变型形式，其中从在图3中示出的方法状态开始、即紧随将芯片33以其设有芯片连接面34的接触侧定位并且固定在载体衬底30上之后，包覆材料层35的上侧37设有接触金属层43，而不会预先如在图6中示出的那样以剥离材料的方式加工包覆材料表面41。
如在图15中示出的那样，随后在第一步骤中为了构成在图19中示出的芯片背侧接触导体装置62，优选通过使用光刻方法将接触结构63构成在包覆材料层35上，并且随后，如在图16中示出的那样，将接触凹部64构成在包覆材料层35中，所述接触凹部在接触面39的区域中露出载体衬底30的接触材料31，使得如在图17中示出并且如已经参考图4和5描述的那样，能够在包覆材料层35中构成接触柱42。
在图18中示出的露出芯片背侧36之后，例如通过借助于激光辐射加载包覆材料层35的表面37，在芯片背侧36上在包覆材料层35中形成的接触凹部64和接触柱42的接触表面65优选通过以无电流的方式沉积铜或铜合金而设有接触材料66，所述接触材料结合预先通过将接触材料层43结构化构成的接触结构63而构成接触导体67，所述接触导体如在图19中示出的那样分别连接芯片背侧36与接触柱42。
为了由载体衬底30构成接触导体装置45，从现在起，如已经参考图10至12描述的那样，进行载体衬底30的结构化，使得构成在图20中示出的芯片模块73。
如图20和21的概览示出的那样，随后，芯片模块73的后侧57和连接接触侧56设有优选由环氧树脂形成的钝化部58、59，其中在外接触侧56的钝化部58中构成接触凹部60，所述接触凹部露出接触面61，使得焊料凸块62能够施加到接触面61上，所述焊料凸块能够实现接用于可能的外部接触芯片模块73的接触部位。
在图22和23中示出替选于在图10和11中示出的芯片连接面34与载体衬底30的接触，所述接触通过将接触材料层31结构化和后续地用接触材料50填充接触凹部49而在接触材料层31中构成接触凹部49来实现。为此，在构成图25和27中示出的接触导体装置45之前已经实现载体衬底81的接触材料层80与芯片连接面34的接触，所述载体衬底设有不导电的胶粘剂涂层82。
在图22和23中示出的实施例中，为了准备芯片连接面34与接触材料层80的接触，芯片连接面34设有接触凸起83，所述接触凸起抵靠于接触材料层80并且后续地通过熔融而与接触材料层80连接。在示出的实施例中，在实施连接之前，借助于胶粘剂涂层82将芯片33固定在载体衬底81上。
为了熔融接触凸起83，接触材料层80或芯片33从其背侧起用激光辐射加载。
在形成图23中示出的芯片33与载体衬底81的连接之后，进行已经参考图3至9所涉及的芯片模块72的制造和参考图14至19所涉及的芯片模块73的制造而阐述的方法步骤，使得基于载体衬底81制造在图24或图26中示出的层压结构84或85。
基于到此为止仍具有载体衬底81的未结构化的接触材料层80的层压结构84或85，现在进行在图25和27中示出的接触材料层80的结构化，以构成接触导体装置45，使得为了限定连接接触部69、70、71而优选通过光刻方法或激光烧蚀在接触材料层80中构成接触凹部86、87、88。
随后，仍如在图13和21中示出的芯片模块72、73那样，如此制成的芯片模块89、90能够在连接接触侧56和其背侧57上设有优选由环氧树脂形成的钝化部58、59，其中在外接触侧56的钝化部58中构成接触凹部60，所述接触凹部露出接触面61，使得焊料凸块62能够施加到接触面61上，所述焊料凸块可实现用于可能的外部接触芯片模块89、90的接触部位。

Claims (26)

1.一种用于制造芯片模块(72，73，89，90)的方法，所述芯片模块具有载体衬底(30，81)和至少一个设置在载体衬底上的芯片(33)以及用于连接芯片连接面(34)与设置在所述芯片模块的接触侧(56)上的连接接触部(69，70，71)的接触导体装置(45)，其中所述芯片以其设有所述芯片连接面的前侧固定在所述载体衬底上并且后续地通过将所述载体衬底的接触材料层(31，80)结构化构成接触导体装置。
2.根据权利要求1所述的方法，
其特征在于，
借助于所述载体衬底的所述接触材料层(31)的粘附的覆层(32)实现将所述芯片(33)固定在所述载体衬底(30)上。
3.根据权利要求2所述的方法，
其特征在于，
所述载体衬底由设有所述粘附的覆层(32)的接触材料薄膜形成。
4.根据上述权利要求中任一项所述的方法，
其特征在于，
通过将所述载体衬底(30)的所述接触材料层(31)结构化以与所述芯片连接面(34)叠合的方式构成接触凹部(49)，所述接触凹部为了将所述芯片连接面与所述接触导体装置(45)接触而用接触材料(50)填充。
5.根据权利要求4所述的方法，
其特征在于，
使用焊料作为接触材料(50)。
6.根据权利要求4所述的方法，
其特征在于，
将所述接触材料(50)通过沉积方法引入到所述接触凹部(49)中。
7.根据权利要求1至3中任一项所述的方法，
其特征在于，
在构成所述接触导体装置(45)之前实现所述芯片连接面(34)与所述接触材料层(80)的接触。
8.根据权利要求7所述的方法，
其特征在于，
为了所述芯片连接面(34)与所述接触材料层(80)的接触，设有接触凸起(83)的所述芯片连接面抵靠于所述接触材料层(80)，并且后续地通过熔融所述接触凸起来实现所述芯片连接面与所述接触材料层的连接。
9.根据权利要求8所述的方法，
其特征在于，
借助于激光加载所述芯片(33)或所述接触材料层(80)来熔融所述接触凸起(83)。
10.根据上述权利要求中任一项所述的方法，
其特征在于，
在构成所述接触导体装置(45)之前为了构成包封所述芯片(33)的包覆材料层(35)而将包覆材料施加到所述载体衬底(30，81)上。
11.根据权利要求10所述的方法，
其特征在于，
将所述包覆材料作为包覆材料层(35)施加到所述芯片(33)上，使得所述芯片夹层状地设置在所述包覆材料层和所述载体衬底之间，并且后续地在用于构成包围所述载体衬底(30，81)的层压结构的层压过程中将所述包覆材料层与所述载体衬底连接。
12.根据权利要求10或11所述的方法，
其特征在于，
所述包覆材料层(35)从其上侧(37)开始设有至少一个接触凹部(38)，所述接触凹部为了在所述接触材料层(31)上构成接触面(39)而露出所述载体衬底(30)的所述接触材料。
13.根据权利要求12所述的方法，
其特征在于，
将所述接触凹部(38)用接触材料(40)填充以构成接触柱(42)。
14.根据权利要求13所述的方法，
其特征在于，
使用焊料作为接触材料(40)。
15.根据权利要求13所述的方法，
其特征在于，
将所述接触材料(40)通过沉积方法引入到所述接触凹部(38)中。
16.根据权利要求11至15中任一项所述的方法，
其特征在于，
将所述包覆材料层(35)从其上侧(37)开始为了露出芯片背侧(36)以剥离材料的方式加工，使得所述芯片背侧和所述接触柱(42)齐平地设置在通过加工构成的包覆材料表面(41)中。
17.根据权利要求16所述的方法，
其特征在于，
将所述芯片(33)通过加工所述包覆材料层(35)打薄。
18.根据权利要求16或17所述的方法，
其特征在于，
将基础金属化部(44)施加到所述芯片背侧(36)上。
19.根据权利要求18所述的方法，
其特征在于，
将所述基础金属化部(44)既施加到所述芯片背侧(36)上也施加到所述包覆材料表面(41)和所述接触柱(42)上。
20.根据权利要求18或19所述的方法，
其特征在于，
将接触材料层(43)施加到所述基础金属化部(44)上。
21.根据权利要求20所述的方法，
其特征在于，
通过沉积施加所述接触材料层(43)。
22.根据上述权利要求中任一项所述的方法，
其特征在于，
将所述接触材料层(43)为了构成芯片背侧接触导体装置(51，62)而结构化。
23.根据权利要求10或11所述的方法，
其特征在于，
将基础金属化部(44)施加到所述包覆材料表面(41)上。
24.根据权利要求23所述的方法，
其特征在于，
将接触材料层(43)施加到所述基础金属化部(44)上，所述接触材料层后续被结构化以构成芯片背侧接触导体装置(62)。
25.根据权利要求23或24所述的方法，
其特征在于，
所述包覆材料层(35)从其上侧(37)开始设有至少一个接触凹部(38)，所述接触凹部为了在所述载体衬底(30)的所述接触材料层(31)上构成接触面(39)而露出所述接触材料，并且后续地用接触材料(40)填充所述接触凹部以构成接触柱(42)。
26.根据权利要求23至25中任一项所述的方法，
其特征在于，
通过用激光辐射加载所述包覆材料来露出芯片背侧(36)，并且后续地将接触材料(66)沉积到所述芯片背侧上以形成在所述芯片背侧和所述芯片背侧接触导体装置(62)之间的接触。
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