CN105849896B - 集成电路封装 - Google Patents

集成电路封装 Download PDF

Info

Publication number
CN105849896B
CN105849896B CN201480057243.7A CN201480057243A CN105849896B CN 105849896 B CN105849896 B CN 105849896B CN 201480057243 A CN201480057243 A CN 201480057243A CN 105849896 B CN105849896 B CN 105849896B
Authority
CN
China
Prior art keywords
antenna package
integrated antenna
mechanical organ
integrated
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480057243.7A
Other languages
English (en)
Other versions
CN105849896A (zh
Inventor
尤尔根·伦纳度斯·希德罗瑞斯·玛莉亚·拉本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sencio BV
Original Assignee
Sencio BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL2011638A external-priority patent/NL2011638C2/en
Application filed by Sencio BV filed Critical Sencio BV
Publication of CN105849896A publication Critical patent/CN105849896A/zh
Application granted granted Critical
Publication of CN105849896B publication Critical patent/CN105849896B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49805—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the leads being also applied on the sidewalls or the bottom of the substrate, e.g. leadless packages for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/183—Connection portion, e.g. seal
    • H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Arrangements For Transmission Of Measured Signals (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

Abstract

集成电路封装包括：集成电路；连接至集成电路的外部连接元件(3)；包围集成电路的封装材料(2)；以及允许另外的元件机械连接至集成电路封装(1)的机械元件(5、6、7)。机械元件(5、6、7)为例如：附接元件(5)；可选地具有螺纹的机械元件(5)；套管元件；轴承元件(7)；电连接器(6)。

Description

集成电路封装
技术领域
本发明涉及集成电路封装，该集成电路封装包括集成电路、连接至集成电路的外部连接元件以及包围集成电路的封装材料。
背景技术
通过本申请人的第EP-A-2090873号欧洲专利公开已知这种集成电路封装。在该欧洲专利公开中所示的实施方式中，集成电路可包括各种部件，诸如具有传感器表面的传感器组件、用于保持传感器组件的承载元件以及另外的关联部件，诸如处理电子器件(IC或ASIC)。
第US 2007/215999号美国专利公开披露了一种半导体器件，其中树脂封装包围包括有垂直于基板表面延伸的端子90、92、96的集成电路。端子可设置有内螺纹孔。
第US 2013/215585号美国专利公开披露了用于具有通孔3的集成电路的封装。通孔3容纳电连接端子4，电连接端子4可例如使用外部插针接触件12接触。
第EP-A-2216814号欧洲专利公开披露了一种集成电路，其中在集成电路接触板上设置有套管16。套管16确保开口在围绕IC的封装中是可用的，其中连接端子14可设置为外部电接触件。
发明内容
本发明旨在提供改善的集成电路封装以允许集成电路封装的更稳健且更可靠的工作，该集成电路封装例如作为具有传感器(诸如压力传感器、温度传感器或位置传感器)的完整的传感器封装。
根据本发明，提供了如上文所限定的集成电路封装，该集成电路封装还包括允许另外的元件机械连接至该集成电路封装的机械元件。该机械元件可以是开放型(通孔)或封闭型的。
通过在集成电路封装中附加这种机械元件，可为集成电路封装(尤其是包括传感器的集成电路封装)提供另外的功能能力、外部连接实现以及低成本解决方案。外部连接元件是例如弯曲的引脚、引脚、插针、引脚焊盘、焊球、连接孔等。
在实施方式中，机械元件从以下构成的群组中选出：附接元件；具有(内)螺纹的机械元件；套管元件；轴承元件；电连接器。这允许利用集成电路封装实现从机械连接到电连接的各种连接。
在另外的实施方式中，集成电路封装可包括连接至集成电路的传感器元件，其中机械元件不提供通向传感器元件的外部连通通道。例如，外部连通通道可设置在集成电路封装的一部分中，在这种情况下其不与本发明实施方式的机械元件干涉。
在另外的实施方式中，机械元件附接至集成电路封装的结构元件，诸如引线框、支承框、陶瓷基板或多芯片模块。这导致整个集成电路封装的强度得以改善并且允许用于模制封装的更容易的组装过程。
在又一组实施方式中，机械元件悬置在集成电路封装中。这可实现在封装材料通过两步式模制工艺而形成的实施方式中。在集成电路封装的其它(结构的)部分的机械元件与传感器元件之间因此不存在功能关系。
在另外的实施方式中，集成电路封装还包括连接至集成电路的传感器元件，并且通向该传感器元件的连通通道经由悬置的机械元件提供。这允许诸如管的另外的元件的外部连接，从而允许外部环境元件(例如外部空气)抵达传感器表面。
在另外的实施方式中，机械元件可设置有外部接口表面，以及集成电路封装材料围绕机械元件的其余外表面存在(例如，模制)。这允许与集成电路封装外部的另外的部件的良好的机械接口，也允许恰当地保护机械元件的覆盖部分。
在示例性实施方式中，机械元件是轴承元件，以及集成电路封装还包括封装内部的传感器、由轴承元件支承的外部连接轴以及附接至外部连接轴的传感器激活元件。传感器可以是霍尔传感器或磁阻传感器，以及传感器激活元件是主动型元件(诸如磁铁或磁性元件)或被动型元件(从而用齿结构替代磁性)。
附图说明
下文中将参照附图使用多个示例性实施方式更详细地描述本发明，在附图中：
图1示出了本发明第一实施方式的立体图；
图2示出了本发明第二实施方式的立体图；
图3示出了本发明第三实施方式的立体图；
图4示出了本发明第三实施方式的可替代的实施方式的立体图；
图5示出了本发明的又一实施方式的立体图；
图6示出了图5的实施方式的三维视图，其中具有部分剖视图；
图7a-图c示出了本发明的另一实施方式的剖视图；
图8a和图8b示出了本发明的又一实施方式的剖视图；以及
图9示出了本发明的再一实施方式的剖视图。
具体实施方式
图1至图3中的每个均示出了根据本发明的集成电路封装的实施方式。封装包括集成电路和连接至封装内部的集成电路的外部连接元件3(例如使用接合线或倒装芯片)。外部连接元件3可连接至例如印刷电路板上的电子电路。
集成电路封装1的封装材料2紧紧地包围集成电路从而提供保护。集成电路封装还包括允许另外的元件机械连接至集成电路封装1的机械元件5、6、7。该另外的元件是例如冷却器主体或用于这种冷却器主体的附接元件、电连接器(例如，(微型)USB连接器)、用于对准目的的引导元件或作为传感器组件的一部分的轴。
机械元件5、6、7的存在的出乎意料的技术效果是集成电路封装1可机械地安装和/或居中和/或电连接至其它部件或子组件。机械元件5、6、7提供与下一级组件和/或诸如冷却块的其它元件的稳健的机械固定。也可通过机械元件6进行另外的电连接，例如，机械元件6可提供与电源、另外的电子器件、计算机等的电连接。电连接器的形式的机械元件6可以以许多变型的形式实现，诸如上述USB连接器或者例如线连接(例如，在本领域所知的“schneidklemmtechnik”)。
在实施方式中，机械元件5、6、7从以下构成的群组中选出：附接元件5；具有螺纹的机械元件5；套管元件；轴承元件7；电连接器6。
在典型的实施方式中，封装材料2是热固性塑料材料以用于提供对机械元件5、6、7的可靠锚固和封装。
在实施方式中，附接元件5可以是用于快速且容易连接的卡扣连接器。在另外的实施方式中，机械元件5可以是标准的螺栓或螺母，使得机械元件5可包括内和/或外螺纹部分。
集成电路封装1由此可稳健地安装和附接至其它子组件。这种实施方式在振动环境中也可以是有益的，在振动环境中外部连接元件3和/或集成电路封装1内部的精密传感器无法承受长期的剧烈震动。通过具有螺纹部分的机械元件5的牢固的固定可解决该问题。除了用于固定/振动的解决方案之外，机械元件5还可起到冷却元件的作用。由例如IGBT或者MOSFET的集成电路元件4产生的热量可通过用作散热器的机械元件5消散到周围环境。
在另外的实施方式中，能够通过例如引导套管的机械套管元件5容易地实现使集成电路封装1关于其它部件或者组件对中。这种套管元件5为集成电路封装1提供高精度的对中但可允许关于设置在套管元件5中的连接元件的一些转动和线性滑动。
例如，集成电路封装1可包括位置传感器并且应当能够关于例如滑动地设置在套管元件内部的连接元件移动。另外，集成电路封装1可承受温度和/或压力改变，从而允许机械套管元件5关于布置在机械套管元件5中的连接元件的一些滑动可使得由于这种温度和/或压力改变而导致的集成电路封装1内部的压力和应力最小化。
在某些情况下，集成电路封装1旨在连接至各种不同的外部设备。在实施方式中，机械元件6可包括用于使用针对外部设备的标准通信协议的电连接器，例如USB、FireWire、HDMI等。将这种电连接器6嵌入到集成电路封装1中避免了额外的外部连接元件3，从而简化了例如可供集成电路封装1安装于其上的印刷电路板(PCB)。电连接器6形式的机械元件6可由此提供不必实现在供集成电路封装1安装于其上的PCB中的补充功能。
在另外的实施方式中，机械元件7可以是允许杆或轴可转动地安装在集成电路封装1中的机械轴承元件7。在封装1包括例如位置传感器、例如转动MR(磁阻)传感器类型的情况下，这种机械轴承元件7可以是尤其有益的，在上述情况下，使轴承7内部的连接元件关于集成电路封装1转动来测量所述封装1关于轴承7内部的连接元件的转动。
可通过集成电路封装1的特定应用来确定所使用的机械元件5、6、7的类型。例如当封装1包括温度传感器或者压力传感器时，可能期望通过机械螺纹元件5的固定。当集成电路封装1包括机械运动传感器时，可有益地使用嵌入机械轴承元件7。
也能够基于组装过程来选择机械元件5、6、7。例如，通过具有嵌入在集成电路封装1中的机械套管元件5，可便于使用用于操控集成电路封装1的取放机器人。在这种应用中，机器人可滑动地插入套管5内部的插针元件并且关于例如PCB滑动地转动/定向集成电路封装1。
在图1至图3的实施方式中，集成电路封装1还可包括穿过封装材料2的外部连通通道以将封装1内部的传感器元件的感测表面暴露至外部环境，从而便于例如温度测量和/或压力测量。这种外部连通通道通过封装材料2中的嵌入的(空心的)机械元件5便利地提供，该机械元件5例如螺母和/或引导套管，该螺母和/或引导套管通常包括贯穿于其中的孔。机械元件5的孔则至少部分地包括外部连通通道。
在集成电路封装1的另外的实施方式中，封装1包括连接至集成电路的传感器元件20，而机械元件5、6、7不提供通向传感器元件20的外部连通通道。在该实施方式中，机械元件5、6、7远离传感器元件20嵌入在封装材料2中，即，不与传感器管芯或者传感器元件20的传感器表面直接接触。当传感器元件20不需要通过外部连通通道直接暴露至外部环境时可能存在上述情况。该实施方式尤其适于利用场现象的传感器元件20，诸如容易穿透封装材料2的磁场和/或电场。在该实施方式的可替代的实施方式中，传感器元件20使用远离机械元件5、6、7布置的(例如，经由封装1的背侧)外部连通通道与外部环境连通。
根据另外的发明实施方式，机械元件5、6、7悬置在集成电路封装1中。在该实施方式中，机械元件5、6、7关于封装材料2悬置布置，使得机械元件仅由封装材料2支承而不与集成电路封装1中的结构元件22、传感器元件20或外部连接元件(例如引线框)21接触。将机械元件5、6、7仅悬置在封装材料2中降低了损伤封装1的内部部件的风险，诸如灵敏和精密的感测材料和/或各种电子器件。可使用两阶段过程来实现该实施方式，如下文中参照图7详细阐释的。
图4示出了本发明的集成电路封装1的另外的实施方式。在该实施方式中，机械元件7具有外部接口表面7a，而封装材料2围绕机械元件7的其余外表面而存在(例如，模制)。在该实施方式中，接口表面7a(例如平行于集成电路封装1的主表面)没有封装材料2，使得所述表面7a可抵靠另一表面部件或子组件。在需要机械元件5、6、7抵靠另一表面部件平整且精确地匹配的情况下，该实施方式是有益的，这种情况可以是机械元件5、6、7作为轴承元件7实施的情况。
在另外的实施方式中，集成电路封装1包括封装材料2的突出件2a，其中机械元件5、6、7在集成电路封装1的远端至少部分地嵌入在突出件2a中。突出件允许机械元件5、6、7关于集成电路封装1偏置。
图5和图6示出了本发明的集成电路封装1的实施方式，其中机械元件5、6、7是轴承元件7，并且集成电路封装1还包括封装1内部的传感器元件20、由轴承元件7支承的外部连接轴15以及附接至外部连接轴15的传感器激活元件17。外部连接轴15附接至外壳16并配置为转动激活元件17。激活元件可以是主动型(磁致)或者由齿结构代替磁力作用的被动型。在另外的实施方式中，外部连接轴15设置有供其自身转动的轮齿18，以允许以简单可靠的方式机械连接至外部组件。外部连接轴15(以及因此轴承元件形式的机械元件7)可完全穿透集成电路封装1，或者可替代地，可仅存在于集成电路封装1的一侧上(机械元件的封闭变体)。轴承元件7可以以简单的引导套管的形式实现。
在实施方式中，传感器元件20是霍尔(Hall)传感器或磁阻(MR)传感器，而传感器激活元件17是磁铁。本文中，因为传感器元件20感测穿透封装材料2的磁场在北极与南极之间的改变，所以机械元件7不必提供通向外部环境的直接外部连通通道。
在图5和图6的实施方式中，机械元件5、6、7附接至集成电路封装1的结构元件22，诸如引线框、支承框、(陶瓷或PCB)基板或多芯片模块。通过使机械元件5、6、7与结构元件22直接接触还可为机械元件5、6、7在封装材料2中的嵌入布置提供强度。
图7a-图7c示出了根据另外的实施方式的集成电路封装1的剖视图。封装1包括诸如引线框的外部连接器元件3(参照图1-图3中的实施方式)，该外部连接器元件3通过一个或多个接合线3a电连接至集成电路元件4。集成电路元件4通常包括具有感测表面区域4a的IC芯片和/或半导体管芯，其中感测表面4a通过外部连通通道8暴露至外部环境。感测表面区域4a例如实施为MEMS(例如压力测量)或者实施为电容性传感器、温度传感器、光学传感器或磁性传感器(例如，基于霍尔测量或磁阻测量)。
形成集成电路封装1的封装材料2以两步式过程来形成。第一步，用封装材料包围集成电路元件4、引线框3以及接合线3a(例如使用模制工艺)，从而形成第一封装部件2b，其中，朝向传感器表面4a的连通通道8没有封装材料。机械元件5(具有贯穿于其中的孔)随后定位在第一封装部件2b的顶部并且与外部连通通道8至少部分地对准(从而延伸外部连通通道8)。在第二步中，封装材料被再次附加至第一封装部件2b顶部上的另一模具，从而形成第二封装部件2c。当从感测表面4a观察时，则外部连通通道8由第一封装部件2b、机械元件5的孔和第二封装部件2c限定。
在机械元件5不与精密集成电路元件4和/或感测表面4a直接接触的情况下，该第一封装材料层2b尤其有益。鉴于此，机械元件5替代地设置在第一封装材料层2b上，导致机械元件5与集成电路元件4和/或感测表面4a偏置预定距离d。偏置机械元件5可减少与IC元件4和或感测表面4a的任何形式的干扰，从而改善测量精度。
在另一组实施方式中，机械元件5是悬置在集成电路封装1中的金属元件，例如使用如上所述的两步式模制工艺。在单个集成电路封装1中，可设置一个或多个金属元件5。如果存在多个金属元件5，则这些金属元件5可以以机械方式和/或电学方式互相连接。另外，金属元件具有条形或带形，这些实施方式可有益地用于集成感测集成电路封装1。
在图7a示出的实施方式中，集成电路元件4悬置在封装材料2中并且通过一个或多个接合线3a电连接至外部连接器元件3。在另外的实施方式中，集成电路元件4也可由外部连接元件3支承，诸如引线框。在再一实施方式中，集成电路封装1包括基板4b(例如，陶瓷或者玻璃基板，可能作为多芯片模块MCM的一部分)，并且集成电路元件4由基板4b支承。
图7b示出了另外的实施方式，其示出了通过使用两步式模制形成的悬置机械元件5。在这种情况下，机械元件5不与半导体元件4、或传感器元件/感测表面4a或者承载件4b(引线框、PCB、陶瓷等)接触。图7c示出了再一实施方式，其示出了通过使用两步式模制形成的悬置机械元件5。在这种情况下，机械元件5是封闭型的(在这种情况下具有闭合的底部)。
机械元件5是机械连接元件(诸如具有内螺纹的元件)的上述实施方式可有益地用于具有传感器元件4和外部连通通道8的集成电路封装1中。可替代地，机械元件5设置有比传感器表面4a大的内径(或甚至大于传感器管芯4)，并且附接至下面的引线框3或其它结构框架元件。这将仍然提供可连接至另外元件(例如柔性导管或管)的外部连通通道8，并且仍然向传感器表面4a提供气密空间。
在另一组实施方式中，机械元件是从集成电路封装1中部分地暴露的、热塑性材料的附接元件5。附接元件5的部分暴露的部分可从集成电路封装1的表面延伸、或者可与集成电路封装1的表面平齐、或者甚至可(部分地)低于集成电路封装1的表面，或者是上述情况的组合。
图8a和图8b示出了示例性实施方式的剖视图。图8a示出了这样的实施方式，其中机械元件是附接元件5，该附接元件5悬置在封装材料2b、2c中。在组装期间，附接元件5以两步式模制工艺设置在封装材料2b、2c中。附接元件5具有热塑性材料(与用作封装材料2b、2c的规则的热固性材料或热硬化材料相反)。如图8b的剖视图所示，这允许另外的子模块9附接至附接元件5的暴露部分5a。附接元件5还可适于例如通过使用位于下侧的特定形状固定在封装材料2b、2c中。另外，该另外的子模块9可设置有与暴露部件5a的表面轮廓匹配的延伸表面轮廓9b。
另外，附接元件5可以是大致环形的或可具有矩形或其它形式，在中部具有或不具有开口或孔口，以及一个或多个附接元件5可设置在单个集成电路封装1中。暴露部件5a可设置有平坦表面或其它表面布局以允许容易地附接子模块9，即，如在图8b的实施方式中所示的位置9a处。
可通过使用利用附接元件5材料的热塑性属性的多种技术中的一种来实现子模块9的附接，这些技术即，摩擦焊接、胶接、使用溶剂软化、熔化/固化等。尤其是当组装时子模块9与附接元件5接触的部分也是热塑性材料时，可以以非常有效且稳健的方式完成附接。
在图9的剖视图中示意性地示出的另外的实施方式中，可使用与集成电路封装1的封装材料2接触的附加的密封元件11来保证持久的密封。在图9中示出的实施方式中，集成表面封装1的上表面设置有匹配密封槽2d。另外，该实施方式中的子模块9设置有与集成电路封装1的外部连通通道8匹配的中部孔口9c。另外，子模块9设置有与附接元件5的暴露(且延伸的)部分5a匹配的延伸表面轮廓9b。当子模块9附接至附接元件5时(在位置9a处)，对暴露部分5a和延伸表面轮廓9b施加熔化(或其它附接方法)直至密封元件11在集成电路封装1与子模块9之间适当地提供密封功能。
子模块9可以是复杂部件或仅仅是集成电路封装1的简单延伸件，例如以用于允许安装另外的元件，诸如透镜、滤波器等，或者子模块9可包括待与集成电路封装1结合使用的另外的功能性元件(例如，管、阀等)。
上文中已参照如图所示的多个示例性实施方式描述了本发明实施方式。可能存在一些部件或元件的修改和可替代的实施例，这些修改和可替代的实施例包含在如所附权利要求所限定的保护范围中。集成电路封装1(及其组成部分)可以是多种类型中的一种并且可包括但不限于以下示例：双列直插封装(DIL)、表面安装器件(SMD)封装、球栅阵列(BGA)封装、焊盘网格阵列(LGA)、四方扁平无引脚(QFN)封装、双面无引脚(DFN)封装等。

Claims (12)

1.集成电路封装，包括：
集成电路；
外部连接元件(3)，连接至所述集成电路；
封装材料(2)，包围所述集成电路；以及
机械元件，允许另外的元件机械连接至所述集成电路封装(1)，
其中，所述机械元件是从所述集成电路封装(1)部分地暴露的、热塑性材料的附接元件。
2.根据权利要求1所述的集成电路封装，其中，所述集成电路封装还包括传感器元件(20)，所述传感器元件(20)电连接至所述集成电路(4)，并且所述机械元件不提供通向所述传感器元件(20)的外部连通通道。
3.根据权利要求1或2所述的集成电路封装，其中，所述机械元件附接至所述集成电路封装(1)的结构元件(22)。
4.根据权利要求3所述的集成电路封装，其中所述结构元件包括引线框、支承框、陶瓷基板或多芯片模块。
5.根据权利要求1或2所述的集成电路封装，其中所述机械元件悬置在所述集成电路封装(1)中。
6.根据权利要求5所述的集成电路封装，其中，所述封装材料(2)通过两步式模制过程形成。
7.根据权利要求5所述的集成电路封装，其中，所述机械元件是附接元件、或者是设置有螺纹的机械元件。
8.根据权利要求7所述的集成电路封装，其中，所述机械元件是悬置在所述集成电路封装(1)中的金属元件。
9.根据权利要求1所述的集成电路封装，还包括与所述集成电路封装(1)的所述封装材料(2)接触的密封元件(11)。
10.根据权利要求1或9所述的集成电路封装，还包括附接至所述附接元件的子模块(9)。
11.根据权利要求5所述的集成电路封装，其中，所述集成电路封装还包括传感器元件(20)，所述传感器元件(20)电连接至所述集成电路，并且通向所述传感器元件(20)的连通通道(8)经由悬置的所述机械元件提供。
12.根据权利要求1所述的集成电路封装，其中，所述机械元件具有外部接口表面(7a)，并且所述集成电路封装材料(2)围绕所述机械元件的其余外表面存在。
CN201480057243.7A 2013-10-18 2014-10-07 集成电路封装 Active CN105849896B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
NL2011638 2013-10-18
NL2011638A NL2011638C2 (en) 2013-10-18 2013-10-18 Integrated circuit package.
NL2013395 2014-09-01
NL2013395 2014-09-01
PCT/NL2014/050697 WO2015057058A2 (en) 2013-10-18 2014-10-07 Integrated circuit package

Publications (2)

Publication Number Publication Date
CN105849896A CN105849896A (zh) 2016-08-10
CN105849896B true CN105849896B (zh) 2018-11-16

Family

ID=51842726

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480057243.7A Active CN105849896B (zh) 2013-10-18 2014-10-07 集成电路封装

Country Status (4)

Country Link
US (1) US9754913B2 (zh)
EP (1) EP3058589B1 (zh)
CN (1) CN105849896B (zh)
WO (1) WO2015057058A2 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10505102B2 (en) * 2016-04-04 2019-12-10 Infineon Technologies Ag Semiconductor device for sensing a magnetic field including an encapsulation material defining a through-hole
CN108496179A (zh) * 2017-04-12 2018-09-04 深圳市汇顶科技股份有限公司 光学指纹传感器和光学指纹传感器的封装方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229641A (en) * 1989-11-25 1993-07-20 Hitachi Maxell, Ltd. Semiconductor card and manufacturing method therefor
JPH05243070A (ja) * 1992-03-03 1993-09-21 Mitsubishi Materials Corp 樹脂モールド電子部品及びその基板への装着方法
JP2004147468A (ja) * 2002-10-28 2004-05-20 Tokyo Parts Ind Co Ltd 駆動回路が内蔵された軸方向空隙型ブラシレス振動モータ

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3637217B2 (ja) * 1998-10-13 2005-04-13 株式会社緑測器 小型回転角度センサ
JP2003031744A (ja) * 2001-07-12 2003-01-31 Mitsubishi Electric Corp 半導体装置
SG111092A1 (en) 2002-11-15 2005-05-30 St Microelectronics Pte Ltd Semiconductor device package and method of manufacture
JP2007235004A (ja) 2006-03-03 2007-09-13 Mitsubishi Electric Corp 半導体装置
JP5010395B2 (ja) * 2007-08-24 2012-08-29 パナソニック株式会社 圧力センサ
EP2090873B1 (en) 2008-02-14 2011-06-01 Elmos Advanced Packaging B.V. Integrated circuit package
CN101644811A (zh) * 2008-08-08 2010-02-10 鸿富锦精密工业（深圳）有限公司 成像装置
US8193596B2 (en) * 2008-09-03 2012-06-05 Solid State System Co., Ltd. Micro-electro-mechanical systems (MEMS) package
JP5272768B2 (ja) 2009-02-05 2013-08-28 三菱電機株式会社 電力用半導体装置とその製造方法
US8304274B2 (en) * 2009-02-13 2012-11-06 Texas Instruments Incorporated Micro-electro-mechanical system having movable element integrated into substrate-based package
JP4957815B2 (ja) * 2009-06-24 2012-06-20 株式会社デンソー 半導体モジュール及びそれを用いた電子回路内蔵型モータ
US8520390B2 (en) * 2010-04-03 2013-08-27 Microsemi Corporation Mechanical isolation and thermal conductivity for an electro-magnetic device
US8551799B2 (en) * 2010-05-06 2013-10-08 Stmicroelectronics S.R.L. Encapsulated micro-electro-mechanical device, in particular a MEMS acoustic transducer
KR20130096280A (ko) 2010-11-09 2013-08-29 미쓰비시덴키 가부시키가이샤 패키지
JP2013101307A (ja) * 2011-10-20 2013-05-23 Canon Inc モータ制御装置、光学走査装置、画像形成装置およびプリント基板
US10023461B2 (en) * 2014-10-31 2018-07-17 Stmicroelectronics S.R.L. Microintegrated encapsulated MEMS sensor with mechanical decoupling and manufacturing process thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229641A (en) * 1989-11-25 1993-07-20 Hitachi Maxell, Ltd. Semiconductor card and manufacturing method therefor
JPH05243070A (ja) * 1992-03-03 1993-09-21 Mitsubishi Materials Corp 樹脂モールド電子部品及びその基板への装着方法
JP2004147468A (ja) * 2002-10-28 2004-05-20 Tokyo Parts Ind Co Ltd 駆動回路が内蔵された軸方向空隙型ブラシレス振動モータ

Also Published As

Publication number Publication date
US20160276304A1 (en) 2016-09-22
EP3058589B1 (en) 2019-12-11
CN105849896A (zh) 2016-08-10
WO2015057058A2 (en) 2015-04-23
US9754913B2 (en) 2017-09-05
EP3058589A2 (en) 2016-08-24
WO2015057058A3 (en) 2015-07-02

Similar Documents

Publication Publication Date Title
US6781248B2 (en) Method for encapsulating intermediate conductive elements connecting a semiconductor die to a substrate and semiconductor devices so packaged
US9728510B2 (en) Cavity package with composite substrate
CN100477141C (zh) 半导体封装器件及其制造和测试方法
JP6461741B2 (ja) センサパッケージ
US9147600B2 (en) Packages for multiple semiconductor chips
CN110379718A (zh) 具有改进电可接入性的封装结构的电子装置和制造方法
KR20160147505A (ko) 압력센서장치 및 그 제조방법
CN107636828B (zh) 集成的夹具和引线以及制作电路的方法
CN105849896B (zh) 集成电路封装
TWI233272B (en) Photodetection sensor
CN104218007A (zh) 小脚印半导体封装
TWI671891B (zh) 影像感測器之小尺寸、重量及封裝
JP4704749B2 (ja) ウェアラブルシリコンチップ
CN105374763A (zh) 用于封装应力敏感器件的硅保护物
TWI708415B (zh) 封蓋結構和包含封蓋結構的半導體裝置封裝
US9484320B2 (en) Vertically packaged integrated circuit
NL2011638C2 (en) Integrated circuit package.
JP4975615B2 (ja) 集積回路装置パッケージ用切り欠きヒート・スラグ
EP3125290A1 (en) Electronic device
US8481369B2 (en) Method of making semiconductor package with improved standoff
TW200425804A (en) Circuit device and method for manufacturing same
JP2019032335A (ja) センサパッケージ
CN109686718B (zh) 封装结构
US20210057577A1 (en) Power Semiconductor Module and Method for Fabricating a Power Semiconductor Module
US20210166949A1 (en) Semiconductor device and corresponding method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant