CN105821473A - 一种具有低底部粘埚率的半熔高效锭制备方法 - Google Patents
一种具有低底部粘埚率的半熔高效锭制备方法 Download PDFInfo
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- CN105821473A CN105821473A CN201510714758.6A CN201510714758A CN105821473A CN 105821473 A CN105821473 A CN 105821473A CN 201510714758 A CN201510714758 A CN 201510714758A CN 105821473 A CN105821473 A CN 105821473A
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- crucible
- silicon
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- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 66
- 239000010410 layer Substances 0.000 claims abstract description 66
- 239000013078 crystal Substances 0.000 claims abstract description 46
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 40
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000002210 silicon-based material Substances 0.000 claims abstract description 38
- 239000011241 protective layer Substances 0.000 claims abstract description 25
- 239000011248 coating agent Substances 0.000 claims abstract description 24
- 238000000576 coating method Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000009413 insulation Methods 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 65
- 239000010703 silicon Substances 0.000 claims description 65
- 239000003292 glue Substances 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 238000004140 cleaning Methods 0.000 claims description 15
- 239000002253 acid Substances 0.000 claims description 7
- 238000002425 crystallisation Methods 0.000 claims description 7
- 230000008025 crystallization Effects 0.000 claims description 7
- 239000000155 melt Substances 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 238000004781 supercooling Methods 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 5
- 230000004927 fusion Effects 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000004886 process control Methods 0.000 claims description 5
- 230000000630 rising effect Effects 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000011856 silicon-based particle Substances 0.000 claims description 4
- -1 and after cleaning Substances 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 22
- 239000011148 porous material Substances 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000006698 induction Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 5
- 239000006260 foam Substances 0.000 description 5
- 238000005266 casting Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 238000006386 neutralization reaction Methods 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010411 cooking Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000007499 fusion processing Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 241000233805 Phoenix Species 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
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CN201510714758.6A CN105821473B (zh) | 2015-10-29 | 2015-10-29 | 一种具有低底部粘埚率的半熔高效锭制备方法 |
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CN201510714758.6A CN105821473B (zh) | 2015-10-29 | 2015-10-29 | 一种具有低底部粘埚率的半熔高效锭制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN105821473A true CN105821473A (zh) | 2016-08-03 |
CN105821473B CN105821473B (zh) | 2018-11-06 |
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CN201510714758.6A Active CN105821473B (zh) | 2015-10-29 | 2015-10-29 | 一种具有低底部粘埚率的半熔高效锭制备方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107723792A (zh) * | 2017-11-20 | 2018-02-23 | 江苏高照新能源发展有限公司 | 一种低位错密度的g8高效硅锭的制备方法 |
CN108754602A (zh) * | 2018-06-12 | 2018-11-06 | 山东大海新能源发展有限公司 | 一种多晶硅半熔铸锭用坩埚及其喷涂工艺和应用 |
CN109913929A (zh) * | 2019-04-29 | 2019-06-21 | 常州大学 | 一种新型铸锭坩埚贴膜及其制备方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102268724A (zh) * | 2011-07-28 | 2011-12-07 | 英利能源(中国)有限公司 | 多晶硅锭及其制造方法、太阳能电池 |
CN102586856A (zh) * | 2012-02-01 | 2012-07-18 | 江西赛维Ldk太阳能高科技有限公司 | 一种提高硅锭利用率和籽晶使用次数的坩埚及其制备方法 |
CN103014833A (zh) * | 2012-12-26 | 2013-04-03 | 阿特斯(中国)投资有限公司 | 硅锭的制备方法 |
CN104018219A (zh) * | 2014-06-17 | 2014-09-03 | 镇江环太硅科技有限公司 | 一种窄黑边高效多晶硅片的制备方法 |
CN104032368A (zh) * | 2014-05-05 | 2014-09-10 | 镇江环太硅科技有限公司 | 一种高效多晶硅锭的制备方法 |
CN203999911U (zh) * | 2014-07-22 | 2014-12-10 | 山西中电科新能源技术有限公司 | 多晶硅引晶装置 |
CN104328490A (zh) * | 2014-11-07 | 2015-02-04 | 江苏美科硅能源有限公司 | 一种无黑边高效多晶硅锭的制备方法 |
CN104532343A (zh) * | 2014-11-07 | 2015-04-22 | 江苏美科硅能源有限公司 | 一种半熔高效锭的制备方法及其半熔高效籽晶保留辅助板 |
-
2015
- 2015-10-29 CN CN201510714758.6A patent/CN105821473B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102268724A (zh) * | 2011-07-28 | 2011-12-07 | 英利能源(中国)有限公司 | 多晶硅锭及其制造方法、太阳能电池 |
CN102586856A (zh) * | 2012-02-01 | 2012-07-18 | 江西赛维Ldk太阳能高科技有限公司 | 一种提高硅锭利用率和籽晶使用次数的坩埚及其制备方法 |
CN103014833A (zh) * | 2012-12-26 | 2013-04-03 | 阿特斯(中国)投资有限公司 | 硅锭的制备方法 |
CN104032368A (zh) * | 2014-05-05 | 2014-09-10 | 镇江环太硅科技有限公司 | 一种高效多晶硅锭的制备方法 |
CN104018219A (zh) * | 2014-06-17 | 2014-09-03 | 镇江环太硅科技有限公司 | 一种窄黑边高效多晶硅片的制备方法 |
CN203999911U (zh) * | 2014-07-22 | 2014-12-10 | 山西中电科新能源技术有限公司 | 多晶硅引晶装置 |
CN104328490A (zh) * | 2014-11-07 | 2015-02-04 | 江苏美科硅能源有限公司 | 一种无黑边高效多晶硅锭的制备方法 |
CN104532343A (zh) * | 2014-11-07 | 2015-04-22 | 江苏美科硅能源有限公司 | 一种半熔高效锭的制备方法及其半熔高效籽晶保留辅助板 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107723792A (zh) * | 2017-11-20 | 2018-02-23 | 江苏高照新能源发展有限公司 | 一种低位错密度的g8高效硅锭的制备方法 |
CN108754602A (zh) * | 2018-06-12 | 2018-11-06 | 山东大海新能源发展有限公司 | 一种多晶硅半熔铸锭用坩埚及其喷涂工艺和应用 |
CN109913929A (zh) * | 2019-04-29 | 2019-06-21 | 常州大学 | 一种新型铸锭坩埚贴膜及其制备方法 |
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Publication number | Publication date |
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CN105821473B (zh) | 2018-11-06 |
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GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Preparation method for semi-fused high-efficiency ingot with low bottom crucible sticking rate Effective date of registration: 20191113 Granted publication date: 20181106 Pledgee: China Everbright Bank, Limited by Share Ltd, Nanjing branch Pledgor: Jiangsu Meike Silicon Energy Co., Ltd. Registration number: Y2019320000280 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20210127 Granted publication date: 20181106 Pledgee: China Everbright Bank Limited by Share Ltd. Nanjing branch Pledgor: JIANGSU MEIKE SILICON ENERGY Co.,Ltd. Registration number: Y2019320000280 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210202 Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: 968 GANGLONG Road, Yanjiang Industrial Park, Zhenjiang City, Jiangsu Province Patentee before: JIANGSU MEIKE SILICON ENERGY Co.,Ltd. |
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TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee after: Jiangsu Meike Solar Energy Technology Co., Ltd Address before: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee before: Jiangsu Meike Solar Energy Technology Co., Ltd |
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CP01 | Change in the name or title of a patent holder |