CN105742252A - 一种功率模块及其制造方法 - Google Patents

一种功率模块及其制造方法 Download PDF

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Publication number
CN105742252A
CN105742252A CN201410748695.1A CN201410748695A CN105742252A CN 105742252 A CN105742252 A CN 105742252A CN 201410748695 A CN201410748695 A CN 201410748695A CN 105742252 A CN105742252 A CN 105742252A
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China
Prior art keywords
organic
substrate
cooling mechanism
power model
heat
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CN201410748695.1A
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CN105742252B (zh
Inventor
洪守玉
陈彦霖
赵振清
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Delta Electronics Inc
Delta Optoelectronics Inc
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Delta Optoelectronics Inc
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Priority to CN201410748695.1A priority Critical patent/CN105742252B/zh
Priority to TW104103482A priority patent/TWI657547B/zh
Priority to US14/959,635 priority patent/US10297523B2/en
Publication of CN105742252A publication Critical patent/CN105742252A/zh
Priority to US16/373,984 priority patent/US20190229033A1/en
Application granted granted Critical
Publication of CN105742252B publication Critical patent/CN105742252B/zh
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    • H01L2924/1026—Compound semiconductors
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/181—Encapsulation

Abstract

本申请提供一种功率模块及其制造方法，功率模块包括：基板、至少一个功率器件及有机散热机构。基板具有上表面和下表面。有机散热机构包括多个有机散热凸起部，有机散热机构位于基板的上表面一侧或基板的下表面一侧，以将功率器件产生的热量传导至外界。由于有机散热机构可加工出更高的表面积，因此，能够大幅降低其和环境之间的换热热阻，进而提高其与环境交换的散热性能。因此，本申请能够在保证功率模块正常散热的前提下，降低有机散热机构自身高度，减小占用空间，在实现功率模块小型化方面具有重要意义。

Description

一种功率模块及其制造方法
技术领域
本申请与功率模块有关，特别涉及具有散热机构的功率模块。
背景技术
高效率、高功率密度及高可靠性一直是业界对功率模块，特别是电源变换器的要求。高效率意味着减少能耗，利于节能减排、保护环境，并减少使用成本。高功率密度则意味着体积小、重量轻，减少运输成本和空间需求，从而减少建设成本。高可靠性意味着更长的使用寿命以及维护成本。
但这三个被业界追求的指标都和良好的热管理息息相关。首先，在较低的工作温度下，功率模块如金氧半场效晶体管(Metal-Oxide-SemiconductorField-EffectTransistor,MOSFET)的通态损耗会降低，这样有利于系统效率的提升。
其次，在很多场合下，功率器件的热量直接影响其功率密度。以电源变化器为例，因为电源变化器是用于处理功率转换的系统，通常半导体器件是损耗比较多的器件，因此，半导体器件是决定电源变化器效率的重要因素之一。而半导体器件能够耐受的温度是有一定限制的，超过这一限制，器件将丧失工作能力或者性能急剧恶化，因此，一个可以将半导体芯片的温度控制在可接受范围内的高效的散热系统就显得至关重要。
再次，半导体器件的寿命和温度息息相关，更低的工作温度可以有效延长器件的使用寿命，在电子领域通常有这样的工程经验，即温度每上升10度其寿命就会降低一半。由上可知，一个良好的热管理对于提高器件的转换效率，功率密度以及可靠性均至关重要。
目前，以一个采用DBC(DirectBondedCopper,直接敷铜陶瓷基板)作为基板的半导体器件为例，如图1所示，功率器件(chip)1通过芯片键合材料(diebondingmaterial)被安装至基板2之上，并通过芯片键合材料实现和基板的走线(trace)(未示出)之间的电性、机械以及热连接。在功率器件1的上表面，将需要保护的区域使用封料(moldingcomponent)包覆，以便起到机械，防尘，防潮，绝缘保护的功用。由于功率器件1的热量主要经由其下表面及部分曝露在外侧的基板2传递，形成向外传热的较优通道，因此，通常在功率器件1的下表面安装一个散热器3。散热器3由使用热导率较高的材料制成，例如铜的热导率高于300W/m.K。为了保证功率器件1的下表面和散热器3表面具有良好的热传导路径，在两个表面之间通常会设置导热界面材料，如导热硅脂4(grease)，该导热硅脂4可以有效填充功率器件1与散热器3之间存在的缝隙，从而实现比空气更好的热传导效果。另外，为了用户安装散热器，需设置弹簧夹片(clip)5实现功率器件1和散热器3之间的机械固定。
然而，目前的散热器具有以下缺陷：
1.由于散热器通常是如铜等金属由挤压成型形成，重量大，加工困难，难以加工的较短、较密，比表面积难以做得非常大，因此，比较适合体积、高度大的模块，不利于产品的小型化。并且，由于散热器的鳍片较长，因此容易与其他电子元件接触，造成短路。
2.功率元件与散热器通过弹簧夹片结合，由于弹簧夹片的使用导致器件的空间利用率变得极低，不符合我们对功率密度的要求。并且，为了可靠的固定连接，功率模块通常设计成具有较厚的封料，以及功率器件本身有较高的表面平整度，以允许承受较大应力，由此增加了整体厚度，也增加了设计成本和模具成本。
3.典型的热界面材料，如硅脂，在长期高温服役过程中会有一些劣化，如小分子材料挥发导致的导热能力降低。再次，模块在工作过程中由于内部发热的交替变化，或者外部环境的改变，由于材料在不同温度下会发生膨胀或收缩，亦即会引起功率器件以及散热器尺寸的改变，相对应会牵扯硅脂移动，甚至会将硅脂推出半导体器件的外面，由此引起热性能的急剧恶化。
因此，需要一种具有散热机构的功率模块，使得功率模块具有更加高效及高功率密度。
在所述背景技术部分公开的上述信息仅用于加强对本申请的背景的理解，因此它可以包括不构成对本领域普通技术人员已知的现有技术的信息。
发明内容
为解决上述现有技术存在的问题，本申请公开了一种功率模块及其制造方法，提高功率模块的散热机构的散热性能，并能降低散热机构所需空间高度，利于产品的小型化。
本申请的其他方面和优点将部分地在下面的描述中阐述，并且部分地将从描述中变得显然，或者可以通过本申请的实践而习得。
根据本申请的一个方面，提供一种功率模块，其包括：基板、至少一个功率器件及有机散热机构。基板具有上表面和下表面；至少一个功率器件，键合至基板的上表面；有机散热机构包括多个有机散热凸起部，所述有机散热机构位于基板的上表面一侧或基板的下表面一侧，以将功率器件产生的热量传导至外界。
根据本申请的另一方面，提供一种功率模块的制造方法，其中，包括：提供一基板，该基板具有上表面和下表面；提供至少一个功率器件；将至少一个功率器件键合至基板的上表面；提供有机散热机构，其包括多个有机散热凸起部，有机散热机构位于基板的上表面一侧或基板的下表面一侧，以将功率器件产生的热量传导至外界。
附图说明
通过参照附图详细描述其示例实施方式，本申请的上述和其它特征及优点将变得更加明显。
图1示出现有的功率模块的示意图。
图2示出散热路径上的热阻及温度分布图。
图3为根据第一实施例的功率模块的示意图。
图4A、4B分别示出了根据第一实施例与现有的功率模块的对比示意图。
图5为根据第一实施例的功率模块的有机散热机构的示意图。
图6为根据第二实施例的功率模块的示意图。
图7为根据第三实施例的功率模块的示意图。
图8为根据第四实施例的功率模块的示意图。
图9为根据第五实施例的功率模块的示意图。
具体实施方式
现在将参考附图更全面地描述示例实施方式。然而，示例实施方式能够以多种形式实施，且不应被理解为限于在此阐述的实施方式；相反，提供这些实施方式使得本申请将全面和完整，并将示例实施方式的构思全面地传达给本领域的技术人员。在图中，为了清晰，夸大了区域和层的厚度。在图中相同的附图标记表示相同或类似的结构，因而将省略它们的详细描述。
所描述的特征、结构或特性可以以任何合适的方式结合在一个或更多实施方式中。在下面的描述中，提供许多具体细节从而给出对本申请的实施方式的充分理解。然而，本领域技术人员将意识到，可以实践本申请的技术方案而没有所述特定细节中的一个或更多，或者可以采用其它的方法、组元、材料等。在其它情况下，不详细示出或描述公知结构、材料或者操作以避免模糊本申请的各方面。
首先说明功率模块的散热情况。以在风冷系统里的功率半导体器件的散热情况为例，功率半导体器件产生的热量经由两个路径向环境散失，路径一：热通过DBC基板传导至散热器上，并自散热器的内部传导至和环境换热的各个表面，最后热量通过散热器的这些表面被环境带走。路径二：热首先通过封料传导到封料表面，并通过封料表面实现向环境的散发。为了说明各个路径对散热的影响，业界通常会对散热的节点位置做如下定义，定义功率半导体器件位置为junction，简写为j；定义功率半导体器件正中心对应的基板的外表面的点为case，简写为c；定义散热器为heatsink，简写为h；定义环境为ambient，简写为a；定义功率半导体器件正中心上方封料表面点为molding，简写为m。相对应的每部分的热阻被简写为Rjc——从junction至case的热阻，Rch——从case至heatsink表面的热阻，Rha——从heatsink表面至ambient的热阻，Rjm——从junction至molding表面的热阻，Rma——从molding表面至ambient的热阻。同理，各点的温度亦以Tx的方式定义，如Tj为junction的温度。如此，可以将散热路径上的热阻及温度分布表达成图2。为了体现散热器的散热作用，下面仅就Tj通过基板向散热器传热的路径进行分析。
参照图1所示的采用DBC(DirectBondingCopper，直接覆铜)基板的半导体器件为例，Rjc归一化为1K/W；Rch包含两个部分，即TIM(热界面材料，例如图1中所用的导热硅脂4)层热阻(RTIM)以及散热器自身的传导热阻(Rh)，RTIM采用普通导热硅脂时亦约1K/W，散热器通常由铜等导热极佳的材料制成，因此Rh值会相对较小，约0.1K/W。Rha为散热器与环境之间的换热热阻，换热热阻为在对流换热过程中，物体表面与流体之间的热阻，影响换热热阻的因素与物体内部的导热热阻的因素不同，换热热阻其与换热表面的形状、流体的流速等有密切关系。物体表面附近的流体的流速越大，其表面对流换热系数也愈大，换热热阻越小；换热表面积越大，其换热热阻越小。因此，为了降低换热热阻，主要从增大换热表面积以及增大流体的流速这两方面考虑。由于散热器是由铜等金属挤压成型形成，故其表面积难以做得非常大。因此，传统技术中，为了尽可能降低热阻，只能采取增大流体的流速的手段，例如，将功率模块，例如电源系统内风速设计的较高。然而，此手段产生的效果也并不理想，其热阻值依然相对较高，比如约5K/W。由此看出，如何有效降低散热器和环境之间的换热热阻是长期以来存在的难题和瓶颈。
本申请人提出一种散热机构，以针对上述瓶颈从另一方面降低散热器和环境之间的换热热阻。
第一实施例
请参照图3所示，本申请较佳实施例提供一种功率模块100，功率模块例如为电源变换器，其包括基板130、功率器件110及有机散热机构120。基板130具有相对的上表面131和下表面132，功率器件110可为MOSFET(诸如普通的SiMOSFET,氮化镓MOSFET等)，二极管，IGBT等，本实施例中，功率器件110为一功率芯片，功率器件110键合至基板130的上表面131。其中：有机散热机构120包括多个有机散热凸起部(fin)121，有机散热机构120位于基板130的上表面131一侧或基板130的下表面132一侧，以将功率器件110产生的热量经由基板130和有机散热机构120传导至外界。
其中，功率器件110与基板130的外部可通过塑封结构包覆，功率器件110可通过贴片(diebonding)材料，例如：焊料，导电胶，导电烧结浆料，导热胶等)键合到基板130上，基板130可以是PCB，DBC，引线框架(LeadFrame)，金属化陶瓷板，金属基板等。在一些实施例，功率器件110的背面(即靠近基板130的一侧)具有电极的芯片，如垂直型器件，倒装型平面型器件等，贴片材料通常需要具备导电性，且在基板130上通常会有布线垫(未示出)与之对应，而实现芯片和基板之间的机械及电/热连接。在一些实施例，对于仅在正面(即远离基板130的一侧)设有电极的平面型功率器件而言，其与基板之间的贴片材料仅需具备导热性能即可，并不一定需要导电性能。功率器件正面的电极可以通过引线键合(wirebonding)工艺实现和基板或者引出端子的电性连接，在本实施例附图中被省略。
在某些场合下，由于功率芯片比较脆弱，容易受湿气、污染物、机械冲击等影响，为了提升可靠性，可以通过封料进行保护。如图3所示，塑封结构(moldingcomponent)140可仅仅保护基板130的上表面131，有机散热机构120设置于基板130的下表面132，功率器件110产生的热量依次透过基板130和有机散热机构120传导至外界。在其他实施例中，塑封结构也可将基板的上下表面均保护起来，有机散热机构设置于塑封结构的表面。
本实施例中，是以有机散热器应用于以DBC基板为基板的半导体功率器件的结构(外部引脚、内部引线等细节在图中被省略)为例来进一步说明本申请的优点，当然，本申请的适用条件并不以此为限。
以下通过一组比较例说明本申请功率模块100的有机散热机构120的散热效果。
参照图4A、4B所示，为了简化分析,在一上表面均匀发热的2mm厚度铜块110的下方分别设置两种不同的散热机构，即如图4A所示的有机散热机构120，及如图4B所示的现有的高热导率散热机构120’。有机散热机构120的材料为热导率为2W/m.K的树脂，高热导率散热机构120’的材料为热导率为380W/m.K的铜。以10m/s的风平行于基板130的表面进行散热。归一化表面未设置散热器的部分的热阻为1K/W，经测试发现：A部分的热阻为0.82K/W，B部分的热阻为0.75K/W。由此可以看到，尽管有机散热机构120本身的热导率低于高热导率散热机构120’，但是，由于有机材料，例如树脂材料的成型性能远比金属高，即在有限的空间里可以获得更高的散热面积，因此，可以大幅降低散热器和空气之间的对流换热热阻，而在散热路径上，内部的导热热阻不占主导地位，热阻的主要部分集中在对流换热热阻，因此，在整体上，有机散热机构120与高热导率散热机构120’的散热性能基本相当。并且，在功率模块的有限体积内，有机散热机构120还可加工出更高的表面积，因此，有机散热机构120的散热性能有进一步提升的空间。
图5示出了有机散热凸起部121，其为圆柱形式，有机散热凸起部121为多排均匀分布，且相邻两排有机散热凸起部交错分布，由此便于加工，且可更进一步增大与气流接触的面积，利于散热。有机散热凸起部的形式不限于此，在其他实施例中，可为均匀或非均匀分布的凸点或鳍片，排布方式可为交错或对齐的。
尽管有机散热凸起部的排布密度大，但有机散热凸起部之间存在允许空气流动的间隙，应在保证通风的前提下，尽可能增大有机散热凸起部的面积，提高散热效率。
其中，有机散热凸起部121包括有机导热材料，有机导热材料的热导率在0.2w/m.K至20w/m.K之间。例如，该有机材料是以环氧树脂，丙烯酸，有机硅等有机材料作为绝缘性的基体，且可以在基体内部混入具有高热导率的绝缘颗粒材料(如三氧化二铝陶瓷，二氧化硅，氮化铝陶瓷，石墨颗粒，金属氧化物颗粒等)。此时，该有机散热凸起部为电绝缘体，并不会出现与其他电子元件相接触而造成的短路情形，可避免现有设计中由铜等高热导率制成的散热器因鳍片较长而造成短路的故障现象。在不需要绝缘的场合亦可以在有机材料为基体的条件下,在内部混入具有高导热的金属颗粒。
有机散热凸起部121可通过丝网或钢丝印刷工艺，亦可以通过直接喷涂、种植(如超声键合等)形成在功率模块的上表面和/或下表面。
可选择的，有机散热凸起部121可通过压膜工艺形成在功率器件或基板的表面，具体为：先在功率器件或基板的表面设置一导热树脂,导热树脂可以是热固性的树脂材料作为基体，内部含有高导热填料以提高其导热率,该导热树脂可以以液态或者B阶段(B-stage，热固性树脂反应的中间阶段)状态的形式存在，随后采用模具加温加压的方式形成希望的形状，加热后导热树脂转化为固体。
因此，本申请的功率器件与有机散热机构之间可省略弹簧夹片等机械固定结构，避免额外占用空间，并且，降低对于功率器件表面平整度的要求，也无需热界面材料，从而避免由于热界面材料在长期高温服役过程中导热性能降级导致恶劣影响。
第二实施例
参阅图6，本实施例的功率模块的散热机构与第一实施例的不同之处在于：基板130的下表面132采用导热胶(thermaladhesive)150粘贴一均温块(thermalspread)160，均温块160通常可以采用金属(铜/铝等)，石墨，陶瓷等材料制作，并在均温块160的迎风面(远离基板130的一侧)设置有机散热机构120。该第二实施例的其它部分与第一实施例大致相同，这里不再赘述。
第三实施例
参阅图7，本实施例的功率模块的散热机构与第一实施例的不同之处在于：有机散热机构120还包括金属散热部123，其通过导热胶150粘贴在基板的下表面132，有机散热凸起部121形成在金属散热部123的下表面。本实施例中，金属散热部123可为现有的散热器(如heatsink)，其包括多个散热鳍片124。散热鳍片124的下表面例如以点胶工艺形成有机散热凸起部121。金属散热部123可进一步起到拓展散热面积的作用。通过在现有的普通散热器的下方局部地设置有机散热凸起部121，可以充分使用空间。再者，现有的普通散热器通常具有导电性，必须和周围的零件隔开一定的距离以进行电气绝缘，这会导致空间浪费。相比之下，在该实施例中，本申请的有机散热机构将电绝缘的有机散热凸起部121设置于散热鳍片124的表面，并不会出现与其他电子元件相接触而造成的短路情形，因而可避免现有设计中的、具有导电性的普通散热器因鳍片较长而造成短路的故障现象。此外，本申请的散热机构尤其适合体积小、高度低的功率模块使用，例如空间越来越紧凑的电源系统内。
该第三实施例的其它部分与第一实施例大致相同，这里不再赘述。
第四实施例
参阅图8，本实施例的功率模块的散热机构与第一实施例的不同之处在于：功率器件110与基板130的外部通过塑封结构(moldingcomponent)140包覆，有机散热机构120设置在塑封结构140的表面，功率器件110产生的热量依次透过塑封结构140和有机散热机构120传导至外界。在图8中，有机散热机构120设置于塑封结构140的上侧。然而，在其他实施例中，可将基板130放置位于功率器件110的上方(例如，将图8的摆放位置旋转180度)，则有机散热机构120设置在塑封结构140的下侧。在实际应用中，有机散热机构120、塑封结构140的位置可根据功率模块的需要任意改变。
该第四实施例的其它部分与第一实施例大致相同，这里不再赘述。
第五实施例
参阅图9，本实施例的功率模块的散热机构与第一实施例的不同之处在于本实施例中，有机散热机构120还包括平面层125，其设置在基板130与有机散热凸起部121之间。从制成材料上讲，例如，该平面层125的制成材料可以与有机散热凸起部121的制成材料不同，亦即，在该实施例中，包括有机散热凸起部121和平面层125的有机散热机构120包括两种或两种以上的材料。例如，平面层125采用较低的界面热阻性的材料，以进一步提高散热效果。或者，平面层125为易于与有机散热凸起部121结合的材料。而有机散热凸起部121采用与平面层125不同的材料制成。又如，该平面层125与有机散热凸起部121也可以采用同一种材料制成，此时，有机散热机构120仅包括一种材料。从工艺流程上讲，可以先在基板130上例如以固化工艺形成平面层125，完成固化后再通过印刷，压铸等方法在平面层125的下表面形成有机散热凸起部121。优选地，平面层125与基板130以及有机散热凸起部121均具备良好的粘结性能，因此，亦可以先将有机散热凸起部121独立成型后再通过具有粘结性的平面层125粘附至基板130上。更可以将有机散热机构120(含有机散热凸起部121及平面层125)随后通过另一粘结材料(图中未标示)粘结至功率模块的一个散热面。
该第五实施例的其它部分与第一实施例大致相同，这里不再赘述。
综上所述，本申请的功率模块的有机散热机构可加工出更高的表面积，因此，能够大幅降低其和环境之间的换热热阻，进而提高其与环境交换的散热性能。此外，本申请的功率模块的有机散热机构在保证功率模块正常散热的前提下，可降低有机散热机构自身高度，减小占用空间，尤其是随着电源领域对功率密度的不断追求，对散热器体积降低的要求亦越来越迫切，与现有的金属散热器相比，本申请的功率模块的有机散热机构易于制造、在有限体积内能够具有尽量高的表面积，因此，本申请的功率模块的有机散热机构在实现功率模块小型化方面具有重要意义。
此外，本申请的功率模块中，无需弹簧夹片等机械固定机构对有机散热机构与功率器件进行固定，且无需硅脂等导热界面材料，因此，可避免出现现有技术中由此导致的整体厚度、设计成本增加、导热界面材料变形等问题。
以上具体地示出和描述了本申请的示例性实施方式。应该理解，本申请不限于所公开的实施方式，相反，本申请意图涵盖包含在所附权利要求的精神和范围内的各种修改和等效布置。

Claims (26)

1.一种功率模块，包括：
基板，具有一上表面和一下表面；
至少一个功率器件，键合至基板的上表面；及
有机散热机构，包括多个有机散热凸起部，所述有机散热机构位于基板的上表面一侧或基板的下表面一侧，以将功率器件产生的热量传导至外界。
2.如权利要求1所述的功率模块，其中，功率器件与基板的外部通过塑封结构包覆，有机散热机构设置于基板的下表面，功率器件产生的热量依次透过基板和有机散热机构传导至外界。
3.如权利要求1所述的功率模块，其中，功率器件与基板的外部通过塑封结构包覆，有机散热机构设置于塑封结构的表面，功率器件产生的热量依次透过塑封结构和有机散热机构传导至外界。
4.如权利要求1所述的功率模块，其中，有机散热凸起部为凸点、圆柱或鳍片。
5.如权利要求4所述的功率模块，其中，有机散热凸起部为均匀或非均匀分布。
6.如权利要求5所述的功率模块，其中，有机散热机构设有多排有机散热凸起部，相邻两排有机散热凸起部交错或对齐分布。
7.如权利要求1所述的功率模块，其中，有机散热凸起部包括有机导热材料，有机导热材料的热导率在0.2w/m.K至20w/m.K之间。
8.如权利要求1所述的功率模块，其中，有机散热凸起部包括有机导热材料，该有机导热材料是以有机材料作为基体且掺杂高热导率颗粒的填充材料。
9.如权利要求8所述的功率模块，其中，有机材料为环氧树脂、丙烯酸或有机硅，所述高热导率颗粒为电性绝缘的三氧化二铝陶瓷、二氧化硅、氮化铝陶瓷、石墨颗粒或金属氧化物颗粒。
10.根据权利要求8所述的功率模块，其中，所述高热导率颗粒为电性导电的金属颗粒。
11.如权利要求1所述的功率模块，其中，有机散热凸起部通过丝网或钢丝印刷工艺、压印工艺、喷涂或种植工艺形成。
12.如权利要求1所述的功率模块，其中，基板的下表面采用导热胶粘贴一均温块，该均温块由具有高热导率的材料制成，有机散热机构设置于均温块的迎风面。
13.如权利要求1所述的功率模块，其中，有机散热机构还包括散热器，其通过导热胶粘贴在基板的下表面，有机散热凸起部形成在金属散热部的下表面。
14.如权利要求13所述的功率模块，其中，该散热器包括多个散热鳍片，所述有机散热凸起部设置于所述散热鳍片的表面。
15.如权利要求1所述的功率模块，其中，有机散热机构还包括平面层，其设置在基板与所述有机散热凸起部之间，所述平面层的制成材料与所述有机散热凸起部的制成材料不同。
16.如权利要求1所述的功率模块，其中，有机散热机构还包括平面层，其设置在基板与所述有机散热凸起部之间，所述平面层与所述有机散热凸起部采用同一种材料制成。
17.一种功率模块的制造方法，包括：
提供一基板，该基板具有上表面和下表面；
提供至少一个功率器件；
将至少一个功率器件键合至基板的上表面；
提供有机散热机构，其包括多个有机散热凸起部，有机散热机构位于基板的上表面一侧或基板的下表面一侧，以将功率器件产生的热量传导至外界。
18.如权利要求17所述的功率模块的制造方法，其中，该制造方法还包括：
形成有机散热机构于基板的下表面；以及
提供塑封结构包覆功率器件与基板的外部，
功率器件产生的热量依次透过基板和有机散热机构传导至外界。
19.如权利要求17所述的功率模块的制造方法，其中，该制造方法还包括：
提供塑封结构包覆功率器件与基板的外部；以及
形成有机散热机构于塑封结构的表面，
功率器件产生的热量依次透过塑封结构和有机散热机构传导至外界。
20.如权利要求17所述的功率模块的制造方法，其中，提供有机散热机构的步骤包括：以固化工艺在基板的下表面形成有平面层，完成固化后再通过印刷或压铸工艺在平面层的下表面形成有机散热凸起部。
21.如权利要求17所述的功率模块的制造方法，其中，提供有机散热机构的步骤包括：先将有机散热凸起部独立成型，接着通过平面层粘附至基板的下表面。
22.如权利要求17所述的功率模块的制造方法，其中，提供有机散热机构的步骤包括：通过丝网或钢丝印刷工艺、压印工艺、喷涂或种植工艺形成有机散热凸起部。
23.如权利要求17所述的功率模块的制造方法，其中，提供有机散热机构的步骤包括：通过压膜工艺形成有机散热凸起部。
24.如权利要求23所述的功率模块的制造方法，其中，通过压膜工艺形成有机散热凸起部的步骤包括：先在基板的下表面设置一导热树脂,导热树脂是热固性的有机材料作为基体，内部含有具有高热导率的填料，该导热树脂以液态或者B阶段状态的形式存在，随后采用模具加温加压的方式形成所需的有机散热凸起部的形状，加热后导热树脂转化为固体。
25.如权利要求17所述的功率模块的制造方法，其中，提供有机散热机构的步骤包括：在基板的下表面形成散热器，并在散热器的下表面形成有机散热凸起部。
26.如权利要求25所述的功率模块的制造方法，其中，散热器包括多个散热鳍片，散热鳍片的表面以点胶工艺形成有机散热凸起部。
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