US20190229033A1 - Power module and method for manufacturing the same - Google Patents

Power module and method for manufacturing the same Download PDF

Info

Publication number
US20190229033A1
US20190229033A1 US16/373,984 US201916373984A US2019229033A1 US 20190229033 A1 US20190229033 A1 US 20190229033A1 US 201916373984 A US201916373984 A US 201916373984A US 2019229033 A1 US2019229033 A1 US 2019229033A1
Authority
US
United States
Prior art keywords
heat dissipating
organic heat
substrate
organic
power module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US16/373,984
Inventor
Shouyu Hong
Zhenqing ZHAO
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Delta Electronics Inc
Original Assignee
Delta Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Delta Electronics Inc filed Critical Delta Electronics Inc
Priority to US16/373,984 priority Critical patent/US20190229033A1/en
Assigned to DELTA ELECTRONICS,INC. reassignment DELTA ELECTRONICS,INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ZHAO, Zhenqing, HONG, SHOUYU
Publication of US20190229033A1 publication Critical patent/US20190229033A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3677Wire-like or pin-like cooling fins or heat sinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737Organic materials with or without a thermoconductive filler
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334Auxiliary members in encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49568Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00Constructional details common to different types of electric apparatus
    • H05K7/20Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2089Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
    • H05K7/209Heat transfer by conduction from internal heat source to heat radiating structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8384Sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/1026Compound semiconductors
    • H01L2924/1032III-V
    • H01L2924/1033Gallium nitride [GaN]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Definitions

  • the present disclosure relates to a power module, and more particularly, to a power module having a structure for heat dissipation.
  • indicators for a power module, in particular for a power converter include high efficiency, high power density and high reliability.
  • high efficiency means reduction of energy consumption, which is beneficial to energy conservation and emission reduction, as well as environment protection and reduction in use cost.
  • the high power density means small volume and light weight, which could bring reduction in transportation cost and space requirement, thus leading to reduction in construction cost. Higher reliability is accompanied by longer service life and lower maintenance cost.
  • a power module e.g., Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET
  • MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor
  • heat generated by a power device may directly influence its power density.
  • semiconductor devices therein typically have relatively large energy consumption. Therefore, the semiconductor devices may be considered as one of the most important factors determining efficiency of the power converter.
  • tolerable temperature of a semiconductor device has a certain limit, and the semiconductor device may be deteriorated sharply in performance or even disabled when the limit is exceeded. Therefore, it is vital important to provide a high-efficiency heat dissipating system capable of keeping temperature of a semiconductor chip within an acceptable range.
  • lifespan of the semiconductor device is also closely associated with the working temperature.
  • a relatively lower operating temperature may enable a longer service life of the semiconductor device.
  • the lifespan of the device may be shortened by half for each 10° C. rise of the temperature.
  • the good thermal management is of critical importance in improving conversion efficiency, power density and reliability of the device.
  • a power device (chip) 1 is mounted on a substrate 2 by die bonding material, and electric, mechanical and thermal connections between the power device 1 and traces (not shown in FIG. 1 ) of the substrate is realized by the die bonding material.
  • An area of upper surface of the power device 1 is covered with a molding component, so as to achieve protection in aspects of mechanical, anti-dust, moisture proof and insulation.
  • a heatsink 3 is mounted on a lower surface of the power device 1 , since heat generated by the power device 1 may be transferred mainly via the lower surface of chip to the bottom side of the substrate 2 , thereby forming a relatively good channel for heat transfer.
  • the heatsink 3 may be made from material with a relatively high thermal conductivity, for example, copper, which has a thermal conductivity above 300 W/m ⁇ K.
  • thermal interface material such as heat-conducting silicone grease 4 may be applied therebetween.
  • the heat-conducting silicone grease 4 is filled in gaps between the power device 1 and the heatsink 3 , thus realizing a better heat conduction than air.
  • a spring clip 5 is provided for realizing mechanical fixation between the power device 1 and the heatsink 3 .
  • a power module including: a substrate having an upper surface and a lower surface at least one power device bonded to the upper surface of the substrate; and an organic heat dissipating structure comprising a plane layer and a plurality of organic heat dissipating protrusions formed on a lower surface of the plane layer, wherein an upper surface of the plane layer is attached on the lower surface side of the substrate and configured to transfer heat generated by the power device outwardly; wherein the organic heat dissipating protrusions and the plane layer are made from a same type of organic heat conduction material.
  • a method for manufacturing a power module including: providing a substrate having an upper surface and a lower surface; providing at least one power device; bonding the at least one power device onto the upper surface of the substrate; and providing an organic heat dissipating structure including a plurality of organic heat dissipating protrusions on the upper surface side or the lower surface side of the substrate, the heat dissipating structure being configured to transfer heat generated by the power device outwardly.
  • FIG. 1 is a schematic diagram of a conventional power module.
  • FIG. 2 shows thermal resistances and a temperature monitor points along a heat dissipation path.
  • FIG. 3 is a schematic diagram of a power module according to a first embodiment.
  • FIG. 4A and FIG. 4B respectively show comparison diagrams of a power module according to the first embodiment and the conventional power module.
  • FIG. 5 is a schematic diagram of an organic heat dissipating structure of the power module according to the first embodiment.
  • FIG. 6 is a schematic diagram of a power module according to a second embodiment.
  • FIG. 7 is a schematic diagram of a power module according to a third embodiment.
  • FIG. 8 is a schematic diagram of a power module according to a fourth embodiment.
  • FIG. 9 is a schematic diagram of a power module according to a fifth embodiment.
  • FIG. 10 illustrates a flow chart of a method for manufacturing a power module according to an embodiment.
  • FIG. 11 illustrates a flow chart of a method for manufacturing a power module according to an embodiment.
  • FIG. 12 illustrates a flow chart of a method for manufacturing a power module according to an embodiment.
  • FIG. 13 illustrates a flow chart of a method for manufacturing a power module according to an embodiment.
  • FIG. 14 illustrates a flow chart of a method for manufacturing a power module according to an embodiment.
  • heat dissipation of the power module is explained as follows. Taking heat dissipation of a power semiconductor device in an air cooling system as an example, heat generated by the power semiconductor device is dissipated into ambient via two paths. In Path I, heat is transferred to a heatsink through a DBC substrate, and further to respective surfaces of the heatsink in heat exchange with the ambient, and finally dissipated into the ambient through those surfaces. In Path II, heat is transferred onto a surface of a molding component and dissipated into the ambient through the surface of the molding component.
  • temperature monitor positions may he defined as below: a position of the power semiconductor device is defined as a junction, abbreviated to j; a point of the outside surface of the substrate corresponding to a midpoint of the power semiconductor device is defined as a case, abbreviated to c; the heatsink is defined as a heatsink, abbreviated to h; the ambient is defined as ambient, abbreviated to a; and a surface point of the molding component above the midpoint of the power semiconductor device is defined as molding, abbreviated to in. Accordingly, thermal resistances corresponding to each part may be abbreviated to following signs.
  • Rjc a thermal resistance from the junction to the case
  • Rch a thermal resistance from the case to the heatsink
  • Rha a thermal resistance from the heatsink to the ambient
  • Rjm a thermal resistance from the junction to the molding
  • Rma a thermal resistance from the molding to the ambient.
  • temperature of each point may be also defined as Tv.
  • Tj stands for a temperature of the junction.
  • Rjc is normalized as 1 K/W;
  • Rch includes two parts, namely thermal resistance (R TIM ) of TIM (thermal interface materials, e.g., the heat-conducting silicone grease 4 as used in FIG. 1 ) layer and thermal resistance (R h ) of the heatsink;
  • R TIM is about 1 K/W when an ordinary heat-conducting silicone grease is used, the heatsink usually is made from material with good thermal conductivity (e.g., copper, etc.). Therefore, the Rh value is relatively small, about 0.1 K/W.
  • Rha is convective thermal resistance between the heatsink and the ambient.
  • Convective thermal resistance refers to thermal resistance between an object surface and a fluid by convection. Factors influencing convective thermal resistance are different from factors of thermal-conduction resistance inside an object. Convective thermal resistance is closely related to a shape of heat convection surface and a velocity of the fluid, etc. The higher velocity of the fluid near the object surface is, the greater the convective heat transfer coefficient is, and the smaller the convective thermal resistance is; the greater the heat convection area is, the smaller the convective thermal resistance is. Therefore, it shall be mainly considered to increase the heat convection area and increase the velocity of the fluid in order to reduce convective thermal resistance.
  • the heatsink is made from metal (e.g., copper, etc.) by extrusion forming process. Therefore, it is difficult to enlarge the surface area of the heatsink. Accordingly, in conventional technology, the means of increasing the velocity of a fluid is adopted in order to reduce the thermal resistance as far as possible. For example, wind velocity inside a power module (e.g., a power supply system) is designed to be relatively high. However, the effect of the means is not desirable because the thermal resistance is still relatively high (about 5 K/W for example). Thus it can be seen that it is a long-standing problem and bottleneck on how to reduce heat transfer resistance between the heatsink and the ambient.
  • a power module e.g., a power supply system
  • a heat dissipating structure is provided so as to reduce heat transfer resistance between the heatsink and the ambient from another point of view in allusion to the foregoing bottleneck.
  • a preferred embodiment of the present disclosure provides a power module 100 (for example, a power converter), including a substrate 130 , a power device 110 and an organic heat dissipating structure 120 (which means the base material is organic material, it could also contain higher thermal conductivity fillers like ceramic, glass, metal and so on).
  • the substrate 130 has an upper surface 131 and a lower surface 132 ; and the power device 110 may be a MOSFET (such as ordinary Si MOSFET and gallium nitride MOSFET, etc.), a diode and an IGBT, etc.
  • the power device 110 is a power chip, and is bonded onto the upper surface 131 of the substrate 130 .
  • the organic heat dissipating structure 120 includes a plurality of organic heat dissipating protrusions 121 and is located on one side of the upper surface 131 or the lower surface 132 of the substrate 130 so as to transfer heat generated by the power device 110 outwardly through the substrate 130 and the organic heat dissipating structure 120 .
  • the power device 110 and the substrate 130 are coated with a molding component, the power device 110 is bonded onto the substrate 130 by die bonding material (for example, a solder, a conductive adhesive, conductive sintering slurry, a thermal conductive adhesive and the like); the substrate 130 may be a PCB, a DBC, a lead frame, a metallized ceramic substrate or an insulated metal substrate (IMS substrate), etc.
  • the bottom side (i.e., the side near to the substrate 130 ) of the power device 110 has an electrode, for example, a vertical-type device, an flip chipped planar device, etc.
  • the die bonding material usually needs to be electrically conductive, and usually a bonding pad (not shown) on the substrate 130 is corresponding to the die bonding material for realizing mechanical and electrical/thermal connection between the chip and the substrate.
  • a bonding pad (not shown) on the substrate 130 is corresponding to the die bonding material for realizing mechanical and electrical/thermal connection between the chip and the substrate.
  • the die bonding material between the planar power device and the substrate has thermal conductivity property. Electrical connection between the electrode on the front side of the power device and the substrate or a leading-out terminal may be realized by wire bonding, which is omitted in the accompanying drawing of the embodiment.
  • a power chip may be protected by the molding component for improving its reliability as the power chip is relatively fragile and is vulnerable to moisture, contamination and mechanical stress, etc.
  • the molding component 140 may merely protect the upper surface 131 of the substrate 130 , the organic heat dissipating structure 120 is located on the lower surface 132 of the substrate 130 , and heat generated by the power device 110 is transferred outwardly through the organic heat dissipating structure 120 via the substrate 130 .
  • the molding component may protect both the upper surface and the lower surface of the substrate, and the organic heat dissipating structure is located on the surface of the molding compound.
  • advantages of the present disclosure are further described by taking an example of applying an organic heatsink to a semiconductor power device using a DBC substrate (details of external pins and inner leads are omitted).
  • application conditions of the present disclosure are not limited to this.
  • FIGS. 4A and 4B for a simplified analysis, two different heat dissipating structures are respectively arranged underneath a 2 mm-thick copper block 110 whose upper surface may generate heat evenly, i.e., an organic heat dissipating structure 120 as shown in FIG. 4A , and a conventional high-heat-conductivity heat dissipating structure 120 ′ as shown in FIG. 4B .
  • the organic heat dissipating structure 120 is made from mainly organic material with a thermal conductivity of 2 W/m ⁇ K
  • the high-heat-conductivity heat dissipating structure 120 ′ is made from copper with a thermal conductivity of 380 W/m ⁇ K.
  • Wind may blow through at the velocity of 10 m/s parallel to the surface of the substrate 130 for heat dissipation.
  • the thermal resistance of 2 mm-thick copper block without any heat dissipating structure like 120 or 120′ may be normalized as 1 K/W. Tests show that Part A has a thermal resistance of 0.82 K/W, and Part B has a thermal resistance of 0.75 K/W.
  • an organic material such as resin material with high conductivity fillers
  • metal in terms of formability, i.e., capable of being formed with bigger area of heat dissipation in limited space, thus significantly reducing convection heat transfer resistance between the heatsink and air; regarding to a heat dissipation path, internal thermal-conduction resistance does not play a dominant role, and the main part of thermal resistance is focused on convection heat transfer resistance.
  • the organic heat dissipating structure 120 is basically equivalent to the high-heat-conductivity heat dissipating structure 120 ′ in terms of heat dissipation performance. Besides, in the limited volume of the power module, bigger surface area may be formed in the organic heat dissipating structure 120 . Therefore, the heat dissipation performance of the organic heat dissipating structure 120 is hopeful to be further improved.
  • FIG. 5 shows cylindrical organic heat dissipating protrusions 121 formed in multiple rows and uniform distribution, and two adjacent rows of the organic heat dissipating protrusions 121 are arranged in a staggered way with each other for the convenience of processing and further increasing airflow contact area to facilitate heat dissipation.
  • the form of organic heat dissipating protrusions is not limited to this.
  • the protrusions may be formed in pillar bumps or fins distributed uniformly or non-uniformly, and in a staggered way or an aligned way.
  • the organic heat dissipating protrusions are arranged with a large distribution density, there still are gaps allowing air flow among the organic heat dissipating protrusions.
  • areas of the organic heat dissipating protrusions shall be increased as far as possible for improving the heat dissipation efficiency.
  • the organic heat dissipating protrusions 121 include an organic heat conduction material with a thermal conductivity between 0.2 w/m ⁇ K and 20 w/m ⁇ K.
  • the organic material may be provided by using organic materials (such as epoxy resin, acrylic acid, organic silicon and the like) as an insulated matrix in which insulating fillers with high thermal conductivity (such as aluminum oxide ceramic, silicon dioxide, aluminum nitride ceramic, graphite particles and metallic oxide particles, etc.) are doped.
  • the organic heat dissipating protrusions serve as electrical insulators, free from short circuit resulted from being in contact with other electronic components, thus avoiding short-circuit fault in conventional design resulted from long fins of the heatsink made from materials with high thermal conductivity (such as copper).
  • the organic material serving as a matrix may he doped with metal particles with high thermal conductivity.
  • the organic heat dissipating protrusions 121 may be formed onto the upper surface and/or the lower surface of the power module by means of screen printing process, or by means of direct spraying or planting process (e.g., ultrasonic bonding, etc.).
  • the organic heat dissipating protrusions 121 may be formed onto the surface of the power device or that of the substrate through film-pressing process, specifically including: providing a thermal conductive resin on the surface of the power device or that of the substrate, where the thermal conductive resin may be provided by using thermosetting organic material as a matrix and internally doped with a filler having high thermal conductivity for improving the thermal conductivity thereof, and the thermal conductive resin may present a form of liquid state or B-stage state (an intermediate stage in thermosetting resin reaction then, forming the organic heat dissipating protrusions in a. desirable shape by molds under high temperature and high pressure, thereby the thermal conductive resin is converted into a form of solid state.
  • a mechanical fixed structure for example, a spring clip, etc.
  • thermal efface materials may be omitted also, thus avoiding bad influence resulted from degradation of thermal conductivity property of thermal interface materials during long-term high temperature service process.
  • the lower surface 132 of the substrate 130 in the present embodiment is attached with a thermal spread 160 ) by a thermal conductive adhesive 150
  • the thermal spread 160 is typically made from metal (such as copper/aluminum, etc.), graphite, ceramic and other materials
  • the organic heat dissipating structure 120 is arranged at a windward side (the side far away from the substrate 130 ) of the thermal spread 160 .
  • Other parts of the second embodiment are approximately the same as the first embodiment, not repeated any more herein.
  • the organic heat dissipating structure 120 in the present embodiment further includes a metal heat dissipating part 123 , which is attached onto the lower surface 132 of the substrate by a thermal conductive adhesive 150 , and the organic heat dissipating protrusions 121 are formed onto the lower surface of the metal heat dissipating part 123 .
  • the metal heat dissipating part 123 may be provided as a conventional heatsink, which includes a plurality of heat dissipating fins 124 .
  • the organic heat dissipating protrusions 121 are formed onto the lower surface of the heat dissipating fins 124 , for example, by means of dispensing process.
  • the metal heat dissipating part 123 may further expand the heat dissipation area.
  • the organic heat dissipating protrusions 121 are arranged below the conventional heatsink partly, thus fully using the space.
  • the conventional heatsink is generally electrically conductive, and shall be subject to electrical insulation by separating from surrounding components at a certain distance, which may lead to waste of space.
  • the electrically insulated organic heat dissipating protrusions 121 are arranged on the surface of the heat dissipating fins 124 , free from short circuit resulted from being in contact with other electronic components, thus avoiding short-circuit fault in conventional design due to long fins of the electrically conductive heatsink.
  • the heat dissipating structure of the present disclosure is particularly suitable for a power module with small size and low height, for example, a more and more compact power supply system.
  • the power device 110 and the substrate 130 in the present embodiment are coated with a molding component 140 , the organic heat dissipating structure 120 is located on the surface of the molding component 140 , and heat generated by the power device 110 is transferred outwardly through the organic heat dissipating structure 120 via the molding component 140 .
  • the organic heat dissipating structure 120 is located at an upper side of the molding component 140 .
  • the substrate 130 may also be arranged above the power device 110 (for example, the arrangement position thereof as shown in FIG. 8 may be rotated by 180 degrees), and the organic heat dissipating structure 120 is arranged below the molding component 140 .
  • arrangement positions of the organic heat dissipating structure 120 and the molding component 140 may be changed as required according to the need of the power module.
  • the organic heat dissipating structure 120 in the present embodiment further includes a plane layer 125 which is arranged between the substrate 130 and the organic heat dissipating protrusions 121 .
  • the plane layer 125 and the organic heat dissipating protrusions 121 may be made from different materials, i.e., in the embodiment, the organic heat dissipating structure 120 including the organic heat dissipating protrusions 121 and the plane layer 125 is made from two or even more types of materials.
  • the plane layer 125 may be made from material with lower contact thermal resistance with substrate for further improving heat dissipation effect.
  • the plane layer 125 may be made from material easy to be combined with both the organic heat dissipating protrusions 121 and substrate 130 , while the organic heat dissipating protrusions 121 are made from different materials.
  • the plane layer 125 and the organic heat dissipating protrusions 121 may be made from a same type of material. Under such circumstances, the organic heat dissipating structure 120 is only made from one type of material.
  • the plane layer 125 may be formed on the substrate 130 , for example, by curing process, and then the organic heat dissipating protrusions 121 may be formed on the lower surface of the plane layer 125 by printing or die-casting process, etc.
  • the plane layer 125 , the substrate 130 and the organic heat dissipating protrusions 121 have good bond performance. Accordingly, it is also possible that the organic heat dissipating protrusions 121 may he independently molded and then adhered onto the substrate 130 by a cohesive plane layer 125 . Subsequently, the organic heat dissipating structure 120 (containing the organic heat dissipating protrusions 121 and the plane layer 125 ) may be further adhered onto a heat dissipation surface of the power module by another binding material (not show in FIG. 9 ). In another embodiment, there may be also a thermal spread (not shown), which may be made from material having high thermal conductivity, sandwiched between the lower surface of the substrate 130 and the upper surface of the plane layer 125 .
  • the organic heat dissipating structure of the power module in the present disclosure may be provided with a bigger surface area. Therefore, the convective heat transfer resistance between the organic heat dissipating structure and the ambient may be substantially reduced, and further the heat dissipation performance of the organic heat dissipating structure may be improved.
  • the organic heat dissipating structure of the power module in the present disclosure may, on the premise of ensuring normal heat dissipation of the power module, be reduced in its own height and space occupation. Particularly in constant pursuit of power density in the field of power supply, the requirement for reduction of a heatsink in size is becoming increasingly urgent. Compared with a conventional metal heatsink, the organic heat dissipating structure of the power module in the present disclosure is of great significance in realizing miniaturization of the power module.
  • the power module of the present disclosure needs neither a mechanical fixed structure (such as a spring clip and the like) to fix the organic heat dissipating structure and the power device nor thermal interface materials such as silicone grease, etc. So, problems in the prior art such as increases in entire thickness and design cost resulted thereby may be avoided,
  • FIG. 10 illustrates a flow chart of a method for manufacturing a powermodule according to an embodiment. As shown in FIG. 10 , the method is used for manufacturing the power module according to any embodiment described above, and includes followings steps:
  • a power device and a substrate are provided to be covered by a molding component, wherein the substrate has an upper surface and a lower surface;
  • an organic heat dissipating structure having a plurality of organic heat dissipating protrusions is formed, wherein the organic heat dissipating structure is located on the upper surface side or the lower surface side of the substrate and configured to transfer heat generated by the power device outwardly.
  • FIG. 11 illustrates a flow chart of a method for manufacturing a power device according to an embodiment. As shown in FIG. 11 , in the present embodiment, the method may further include steps as follows:
  • step 201 a power device and a substrate are provided to be covered by a molding component;
  • step 202 an organic heat dissipating structure is formed on a surface of the molding component.
  • the heat generated by the power device is transferred outwardly through the organic heat dissipating structure via the molding component.
  • FIG. 12 illustrates a flow chart of a method for manufacturing a power module according to an embodiment. As shown in FIG. 12 , in the present exemplary embodiment, when the organic heat dissipating structure is formed, following steps may be performed:
  • a plane layer is formed on the lower surface of the substrate by means of curing process
  • the organic heat dissipating protrusions is formed on a lower surface of the plane layer by means of printing or die casting process after the curing process.
  • FIG. 13 illustrates a flow chart of a method for manufacturing a power module according to an embodiment.
  • the organic heat dissipating structure may be formed by the following steps:
  • step 401 the organic heat dissipating protrusions are independently made.
  • step 402 the organic heat dissipating protrusions are attached onto the lower surface of the substrate through a plane layer.
  • FIG. 14 illustrates a flow chart of a method for manufacturing a power module according to an embodiment.
  • the organic heat dissipating structure may be formed by the following steps:
  • the organic heat dissipating protrusions are formed by means of any process selected from screen printing process, imprinting process, spraying or planting process, and film-pressing process.
  • the step of forming the organic heat dissipating protrusions by means of film-pressing process may include:
  • a thermal conductive resin is provided on the lower surface of the substrate.
  • the thermal conductive resin is provided with thermosetting organic material as a matrix and internally doped with a filler having high thermal conductivity, and the thermal conductive resin presents a form of liquid state or B-stage state;
  • the organic heat dissipating protrusions are formed, in a shape as required, by molds under high temperature and high pressure, wherein the thermal conductive resin is converted into a form of solid state.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Thermal Sciences (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A power module and a method for manufacturing the same are provided. The power module comprises: a substrate, at least one power device, and an organic heat dissipating structure. The substrate has an upper surface and a lower surface. The organic heat dissipating structure comprises a plane layer and a plurality of organic heat dissipating protrusions formed on a lower surface of the plane layer, wherein an upper surface of the plane layer is attached on the lower surface side of the substrate and configured to transfer heat generated by the power device outwardly.

Description

    CROSS REFERENCE TO RELATED APPLICATION
  • This application is a continuation of U.S. patent application Ser. No. 14/959,635 filed on Dec. 4, 2015, which is based on and claims priority to Chinese Patent Application No. 201410748695.1, filed on Dec. 9, 2014, the entire contents of which are incorporated herein by reference.
  • TECHNICAL FIELD
  • The present disclosure relates to a power module, and more particularly, to a power module having a structure for heat dissipation.
  • BACKGROUND
  • In power supply industry, indicators for a power module, in particular for a power converter include high efficiency, high power density and high reliability. Then high efficiency means reduction of energy consumption, which is beneficial to energy conservation and emission reduction, as well as environment protection and reduction in use cost. The high power density means small volume and light weight, which could bring reduction in transportation cost and space requirement, thus leading to reduction in construction cost. Higher reliability is accompanied by longer service life and lower maintenance cost.
  • The above three indicators sought by the industry are closely linked with good thermal management. Firstly, at a lower operating temperature, conduction losses of a power module (e.g., Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET) may be reduced, which is beneficial to improving system efficiency.
  • Secondly, on many occasions, heat generated by a power device may directly influence its power density. Taking a power converter for an example, semiconductor devices therein typically have relatively large energy consumption. Therefore, the semiconductor devices may be considered as one of the most important factors determining efficiency of the power converter. Moreover, tolerable temperature of a semiconductor device has a certain limit, and the semiconductor device may be deteriorated sharply in performance or even disabled when the limit is exceeded. Therefore, it is vital important to provide a high-efficiency heat dissipating system capable of keeping temperature of a semiconductor chip within an acceptable range.
  • Thirdly, lifespan of the semiconductor device is also closely associated with the working temperature. A relatively lower operating temperature may enable a longer service life of the semiconductor device. Generally, there is such an engineering empirical rule in the electronic field that the lifespan of the device may be shortened by half for each 10° C. rise of the temperature. As can be known from above, the good thermal management is of critical importance in improving conversion efficiency, power density and reliability of the device.
  • Now, taking an example of a semiconductor device using DBC (Direct Bonded Copper) ceramic substrate as substrate, as shown in FIG. 1, a power device (chip) 1 is mounted on a substrate 2 by die bonding material, and electric, mechanical and thermal connections between the power device 1 and traces (not shown in FIG. 1) of the substrate is realized by the die bonding material. An area of upper surface of the power device 1 is covered with a molding component, so as to achieve protection in aspects of mechanical, anti-dust, moisture proof and insulation. Typically, a heatsink 3 is mounted on a lower surface of the power device 1, since heat generated by the power device 1 may be transferred mainly via the lower surface of chip to the bottom side of the substrate 2, thereby forming a relatively good channel for heat transfer. The heatsink 3 may be made from material with a relatively high thermal conductivity, for example, copper, which has a thermal conductivity above 300 W/m·K. In order to ensure a good heat conduction path between the lower surface of the power device 1 and the surface of the heatsink 3, thermal interface material such as heat-conducting silicone grease 4 may be applied therebetween. The heat-conducting silicone grease 4 is filled in gaps between the power device 1 and the heatsink 3, thus realizing a better heat conduction than air. In addition, in order to facilitate users to install a heatsink, a spring clip 5 is provided for realizing mechanical fixation between the power device 1 and the heatsink 3.
  • The foregoing information is merely disclosed to facilitate understanding of background of the present disclosure. Therefore, the foregoing information may include information not constituting the prior art known to those of ordinary skill in the art.
  • SUMMARY
  • According to one aspect of the present disclosure, it is provided a power module, including: a substrate having an upper surface and a lower surface at least one power device bonded to the upper surface of the substrate; and an organic heat dissipating structure comprising a plane layer and a plurality of organic heat dissipating protrusions formed on a lower surface of the plane layer, wherein an upper surface of the plane layer is attached on the lower surface side of the substrate and configured to transfer heat generated by the power device outwardly; wherein the organic heat dissipating protrusions and the plane layer are made from a same type of organic heat conduction material.
  • According to another aspect of the present disclosure, it is provided a method for manufacturing a power module, including: providing a substrate having an upper surface and a lower surface; providing at least one power device; bonding the at least one power device onto the upper surface of the substrate; and providing an organic heat dissipating structure including a plurality of organic heat dissipating protrusions on the upper surface side or the lower surface side of the substrate, the heat dissipating structure being configured to transfer heat generated by the power device outwardly.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • By referring to detailed description of the drawings and exemplary embodiments, the foregoing and other characteristics and advantages of the present disclosure will become more apparent.
  • FIG. 1 is a schematic diagram of a conventional power module.
  • FIG. 2 shows thermal resistances and a temperature monitor points along a heat dissipation path.
  • FIG. 3 is a schematic diagram of a power module according to a first embodiment.
  • FIG. 4A and FIG. 4B respectively show comparison diagrams of a power module according to the first embodiment and the conventional power module.
  • FIG. 5 is a schematic diagram of an organic heat dissipating structure of the power module according to the first embodiment.
  • FIG. 6 is a schematic diagram of a power module according to a second embodiment.
  • FIG. 7 is a schematic diagram of a power module according to a third embodiment.
  • FIG. 8 is a schematic diagram of a power module according to a fourth embodiment.
  • FIG. 9 is a schematic diagram of a power module according to a fifth embodiment.
  • FIG. 10 illustrates a flow chart of a method for manufacturing a power module according to an embodiment.
  • FIG. 11 illustrates a flow chart of a method for manufacturing a power module according to an embodiment.
  • FIG. 12 illustrates a flow chart of a method for manufacturing a power module according to an embodiment.
  • FIG. 13 illustrates a flow chart of a method for manufacturing a power module according to an embodiment.
  • FIG. 14 illustrates a flow chart of a method for manufacturing a power module according to an embodiment.
  • DETAILED DESCRIPTION
  • Exemplary embodiments will be described more comprehensively by referring to accompanying drawings. However, exemplary embodiments can be implemented in many forms It shall not be understood that the present disclosure is limited to embodiments as set forth herein; instead, these embodiments are provided to ensure the present disclosure to be more comprehensive and complete. And the conception of these exemplary embodiments shall be conveyed to those skilled in the art across-the-board. In the drawings, thickness of areas and layers is exaggerated for distinctness. The same numbers in drawings represent the same or similar structures, and thus detailed description thereof may be omitted.
  • Characteristics, structures or features as described may be incorporated into one or more embodiments in any suitable way. Many concrete details are provided in the following descriptions for a full understanding of embodiments of the present disclosure. However, those skilled in the art should realize that the technical solution of the present disclosure may be implemented without one or even more of specific details, and/or by using other alternative methods, components, materials and the like. In other circumstances, known structures, materials or operations are not shown or described in detail for the avoidance of fuzziness of various aspects of the present disclosure.
  • First of all, heat dissipation of the power module is explained as follows. Taking heat dissipation of a power semiconductor device in an air cooling system as an example, heat generated by the power semiconductor device is dissipated into ambient via two paths. In Path I, heat is transferred to a heatsink through a DBC substrate, and further to respective surfaces of the heatsink in heat exchange with the ambient, and finally dissipated into the ambient through those surfaces. In Path II, heat is transferred onto a surface of a molding component and dissipated into the ambient through the surface of the molding component. In order to explain influence of paths on heat dissipation, temperature monitor positions may he defined as below: a position of the power semiconductor device is defined as a junction, abbreviated to j; a point of the outside surface of the substrate corresponding to a midpoint of the power semiconductor device is defined as a case, abbreviated to c; the heatsink is defined as a heatsink, abbreviated to h; the ambient is defined as ambient, abbreviated to a; and a surface point of the molding component above the midpoint of the power semiconductor device is defined as molding, abbreviated to in. Accordingly, thermal resistances corresponding to each part may be abbreviated to following signs. Rjc: a thermal resistance from the junction to the case, Rch: a thermal resistance from the case to the heatsink, Rha: a thermal resistance from the heatsink to the ambient, Rjm: a thermal resistance from the junction to the molding, and Rma: a thermal resistance from the molding to the ambient. Similarly, temperature of each point may be also defined as Tv. For example, Tj stands for a temperature of the junction. Thus, thermal resistances and temperature monitor positions along the heat dissipation path may be illustrated in FIG. 2. In order to illustrate the heat dissipating effect of the heatsink, an analysis is made hereinafter to the heat transfer path of Tj from the substrate to the heatsink.
  • Taking an example of the semiconductor device using a DBC (Direct Bonding Copper) substrate as shown in FIG. 1, Rjc is normalized as 1 K/W; Rch includes two parts, namely thermal resistance (RTIM) of TIM (thermal interface materials, e.g., the heat-conducting silicone grease 4 as used in FIG. 1) layer and thermal resistance (Rh) of the heatsink; RTIM is about 1 K/W when an ordinary heat-conducting silicone grease is used, the heatsink usually is made from material with good thermal conductivity (e.g., copper, etc.). Therefore, the Rh value is relatively small, about 0.1 K/W. Rha is convective thermal resistance between the heatsink and the ambient. Convective thermal resistance refers to thermal resistance between an object surface and a fluid by convection. Factors influencing convective thermal resistance are different from factors of thermal-conduction resistance inside an object. Convective thermal resistance is closely related to a shape of heat convection surface and a velocity of the fluid, etc. The higher velocity of the fluid near the object surface is, the greater the convective heat transfer coefficient is, and the smaller the convective thermal resistance is; the greater the heat convection area is, the smaller the convective thermal resistance is. Therefore, it shall be mainly considered to increase the heat convection area and increase the velocity of the fluid in order to reduce convective thermal resistance. The heatsink is made from metal (e.g., copper, etc.) by extrusion forming process. Therefore, it is difficult to enlarge the surface area of the heatsink. Accordingly, in conventional technology, the means of increasing the velocity of a fluid is adopted in order to reduce the thermal resistance as far as possible. For example, wind velocity inside a power module (e.g., a power supply system) is designed to be relatively high. However, the effect of the means is not desirable because the thermal resistance is still relatively high (about 5 K/W for example). Thus it can be seen that it is a long-standing problem and bottleneck on how to reduce heat transfer resistance between the heatsink and the ambient.
  • A heat dissipating structure is provided so as to reduce heat transfer resistance between the heatsink and the ambient from another point of view in allusion to the foregoing bottleneck.
  • The First Embodiment
  • As shown in FIG. 3, a preferred embodiment of the present disclosure provides a power module 100 (for example, a power converter), including a substrate 130, a power device 110 and an organic heat dissipating structure 120 (which means the base material is organic material, it could also contain higher thermal conductivity fillers like ceramic, glass, metal and so on). The substrate 130 has an upper surface 131 and a lower surface 132; and the power device 110 may be a MOSFET (such as ordinary Si MOSFET and gallium nitride MOSFET, etc.), a diode and an IGBT, etc. In the embodiment, the power device 110 is a power chip, and is bonded onto the upper surface 131 of the substrate 130. In the embodiment, the organic heat dissipating structure 120 includes a plurality of organic heat dissipating protrusions 121 and is located on one side of the upper surface 131 or the lower surface 132 of the substrate 130 so as to transfer heat generated by the power device 110 outwardly through the substrate 130 and the organic heat dissipating structure 120.
  • In an embodiment, the power device 110 and the substrate 130 are coated with a molding component, the power device 110 is bonded onto the substrate 130 by die bonding material (for example, a solder, a conductive adhesive, conductive sintering slurry, a thermal conductive adhesive and the like); the substrate 130 may be a PCB, a DBC, a lead frame, a metallized ceramic substrate or an insulated metal substrate (IMS substrate), etc. In some embodiments, the bottom side (i.e., the side near to the substrate 130) of the power device 110 has an electrode, for example, a vertical-type device, an flip chipped planar device, etc. The die bonding material usually needs to be electrically conductive, and usually a bonding pad (not shown) on the substrate 130 is corresponding to the die bonding material for realizing mechanical and electrical/thermal connection between the chip and the substrate. In some embodiments, regarding to a planar power device which is only provided with electrodes on the top side (i.e., the side far away from the substrate 130), the die bonding material between the planar power device and the substrate has thermal conductivity property. Electrical connection between the electrode on the front side of the power device and the substrate or a leading-out terminal may be realized by wire bonding, which is omitted in the accompanying drawing of the embodiment.
  • On some occasions, a power chip may be protected by the molding component for improving its reliability as the power chip is relatively fragile and is vulnerable to moisture, contamination and mechanical stress, etc. As shown in FIG. 3, the molding component 140 may merely protect the upper surface 131 of the substrate 130, the organic heat dissipating structure 120 is located on the lower surface 132 of the substrate 130, and heat generated by the power device 110 is transferred outwardly through the organic heat dissipating structure 120 via the substrate 130. In other embodiments, the molding component may protect both the upper surface and the lower surface of the substrate, and the organic heat dissipating structure is located on the surface of the molding compound.
  • In the embodiment, advantages of the present disclosure are further described by taking an example of applying an organic heatsink to a semiconductor power device using a DBC substrate (details of external pins and inner leads are omitted). However, application conditions of the present disclosure are not limited to this.
  • The heat dissipation effect of the organic heat dissipating structure 120 of the power module 100 in the present disclosure is explained by a group of comparative examples hereinafter.
  • As shown in FIGS. 4A and 4B, for a simplified analysis, two different heat dissipating structures are respectively arranged underneath a 2mm-thick copper block 110 whose upper surface may generate heat evenly, i.e., an organic heat dissipating structure 120 as shown in FIG. 4A, and a conventional high-heat-conductivity heat dissipating structure 120′ as shown in FIG. 4B. The organic heat dissipating structure 120 is made from mainly organic material with a thermal conductivity of 2 W/m·K, and the high-heat-conductivity heat dissipating structure 120′ is made from copper with a thermal conductivity of 380 W/m·K. Wind may blow through at the velocity of 10 m/s parallel to the surface of the substrate 130 for heat dissipation. The thermal resistance of 2 mm-thick copper block without any heat dissipating structure like 120 or 120′ may be normalized as 1 K/W. Tests show that Part A has a thermal resistance of 0.82 K/W, and Part B has a thermal resistance of 0.75 K/W. Thus it can be seen that although the thermal conductivity of the organic heat dissipating structure 120 is lower than that of the high-heat-conductivity heat dissipating structure 120′, an organic material (such as resin material with high conductivity fillers) is much higher than metal in terms of formability, i.e., capable of being formed with bigger area of heat dissipation in limited space, thus significantly reducing convection heat transfer resistance between the heatsink and air; regarding to a heat dissipation path, internal thermal-conduction resistance does not play a dominant role, and the main part of thermal resistance is focused on convection heat transfer resistance. For this reason, on the whole, the organic heat dissipating structure 120 is basically equivalent to the high-heat-conductivity heat dissipating structure 120′ in terms of heat dissipation performance. Besides, in the limited volume of the power module, bigger surface area may be formed in the organic heat dissipating structure 120. Therefore, the heat dissipation performance of the organic heat dissipating structure 120 is hopeful to be further improved.
  • FIG. 5 shows cylindrical organic heat dissipating protrusions 121 formed in multiple rows and uniform distribution, and two adjacent rows of the organic heat dissipating protrusions 121 are arranged in a staggered way with each other for the convenience of processing and further increasing airflow contact area to facilitate heat dissipation. The form of organic heat dissipating protrusions is not limited to this. In other embodiments, the protrusions may be formed in pillar bumps or fins distributed uniformly or non-uniformly, and in a staggered way or an aligned way.
  • Although the organic heat dissipating protrusions are arranged with a large distribution density, there still are gaps allowing air flow among the organic heat dissipating protrusions. On the premise of ensuring good ventilation, areas of the organic heat dissipating protrusions shall be increased as far as possible for improving the heat dissipation efficiency.
  • Wherein, the organic heat dissipating protrusions 121 include an organic heat conduction material with a thermal conductivity between 0.2 w/m·K and 20 w/m·K. For example, the organic material may be provided by using organic materials (such as epoxy resin, acrylic acid, organic silicon and the like) as an insulated matrix in which insulating fillers with high thermal conductivity (such as aluminum oxide ceramic, silicon dioxide, aluminum nitride ceramic, graphite particles and metallic oxide particles, etc.) are doped. In this case, the organic heat dissipating protrusions serve as electrical insulators, free from short circuit resulted from being in contact with other electronic components, thus avoiding short-circuit fault in conventional design resulted from long fins of the heatsink made from materials with high thermal conductivity (such as copper). On some occasions where insulation is not necessary, the organic material serving as a matrix may he doped with metal particles with high thermal conductivity.
  • The organic heat dissipating protrusions 121 may be formed onto the upper surface and/or the lower surface of the power module by means of screen printing process, or by means of direct spraying or planting process (e.g., ultrasonic bonding, etc.).
  • Optionally, the organic heat dissipating protrusions 121 may be formed onto the surface of the power device or that of the substrate through film-pressing process, specifically including: providing a thermal conductive resin on the surface of the power device or that of the substrate, where the thermal conductive resin may be provided by using thermosetting organic material as a matrix and internally doped with a filler having high thermal conductivity for improving the thermal conductivity thereof, and the thermal conductive resin may present a form of liquid state or B-stage state (an intermediate stage in thermosetting resin reaction then, forming the organic heat dissipating protrusions in a. desirable shape by molds under high temperature and high pressure, thereby the thermal conductive resin is converted into a form of solid state.
  • Therefore, in the present disclosure, a mechanical fixed structure (for example, a spring clip, etc.) for fixing the power device and the organic heat dissipating structure may be omitted, thus avoiding extra space occupation and reducing the demands for surface evenness of the power device; besides, thermal efface materials may be omitted also, thus avoiding bad influence resulted from degradation of thermal conductivity property of thermal interface materials during long-term high temperature service process.
  • The Second Embodiment
  • Referring to FIG. 6, unlike the previous first embodiment, the lower surface 132 of the substrate 130 in the present embodiment is attached with a thermal spread 160) by a thermal conductive adhesive 150, the thermal spread 160 is typically made from metal (such as copper/aluminum, etc.), graphite, ceramic and other materials, and the organic heat dissipating structure 120 is arranged at a windward side (the side far away from the substrate 130) of the thermal spread 160. Other parts of the second embodiment are approximately the same as the first embodiment, not repeated any more herein.
  • The Third Embodiment
  • Referring to FIG. 7, unlike the previous first embodiment, the organic heat dissipating structure 120 in the present embodiment further includes a metal heat dissipating part 123, which is attached onto the lower surface 132 of the substrate by a thermal conductive adhesive 150, and the organic heat dissipating protrusions 121 are formed onto the lower surface of the metal heat dissipating part 123. In the embodiment, the metal heat dissipating part 123 may be provided as a conventional heatsink, which includes a plurality of heat dissipating fins 124. The organic heat dissipating protrusions 121 are formed onto the lower surface of the heat dissipating fins 124, for example, by means of dispensing process. The metal heat dissipating part 123 may further expand the heat dissipation area. The organic heat dissipating protrusions 121 are arranged below the conventional heatsink partly, thus fully using the space. Furthermore, the conventional heatsink is generally electrically conductive, and shall be subject to electrical insulation by separating from surrounding components at a certain distance, which may lead to waste of space. By contrast, in the organic heat dissipating structure of the present embodiment, the electrically insulated organic heat dissipating protrusions 121 are arranged on the surface of the heat dissipating fins 124, free from short circuit resulted from being in contact with other electronic components, thus avoiding short-circuit fault in conventional design due to long fins of the electrically conductive heatsink. Additionally, the heat dissipating structure of the present disclosure is particularly suitable for a power module with small size and low height, for example, a more and more compact power supply system.
  • Other parts of the third embodiment are approximately same as the first embodiment, not repeated any more herein.
  • The Fourth Embodiment
  • Referring to FIG. 8, unlike the previous first embodiment, the power device 110 and the substrate 130 in the present embodiment are coated with a molding component 140, the organic heat dissipating structure 120 is located on the surface of the molding component 140, and heat generated by the power device 110 is transferred outwardly through the organic heat dissipating structure 120 via the molding component 140. In FIG. 8, the organic heat dissipating structure 120 is located at an upper side of the molding component 140. However, in other embodiments, the substrate 130 may also be arranged above the power device 110 (for example, the arrangement position thereof as shown in FIG. 8 may be rotated by 180 degrees), and the organic heat dissipating structure 120 is arranged below the molding component 140. In practical application, arrangement positions of the organic heat dissipating structure 120 and the molding component 140 may be changed as required according to the need of the power module.
  • Other parts of the fourth embodiment are approximately the same as the first embodiment, not repeated any more herein.
  • The Fifth Embodiment
  • Referring to FIG. 9, unlike the previous first embodiment the organic heat dissipating structure 120 in the present embodiment further includes a plane layer 125 which is arranged between the substrate 130 and the organic heat dissipating protrusions 121. The plane layer 125 and the organic heat dissipating protrusions 121 may be made from different materials, i.e., in the embodiment, the organic heat dissipating structure 120 including the organic heat dissipating protrusions 121 and the plane layer 125 is made from two or even more types of materials. For example, the plane layer 125 may be made from material with lower contact thermal resistance with substrate for further improving heat dissipation effect. Alternatively, the plane layer 125 may be made from material easy to be combined with both the organic heat dissipating protrusions 121 and substrate 130, while the organic heat dissipating protrusions 121 are made from different materials. For another example, the plane layer 125 and the organic heat dissipating protrusions 121 may be made from a same type of material. Under such circumstances, the organic heat dissipating structure 120 is only made from one type of material. In terms of technological process, the plane layer 125 may be formed on the substrate 130, for example, by curing process, and then the organic heat dissipating protrusions 121 may be formed on the lower surface of the plane layer 125 by printing or die-casting process, etc. In an embodiment, the plane layer 125, the substrate 130 and the organic heat dissipating protrusions 121 have good bond performance. Accordingly, it is also possible that the organic heat dissipating protrusions 121 may he independently molded and then adhered onto the substrate 130 by a cohesive plane layer 125. Subsequently, the organic heat dissipating structure 120 (containing the organic heat dissipating protrusions 121 and the plane layer 125) may be further adhered onto a heat dissipation surface of the power module by another binding material (not show in FIG. 9). In another embodiment, there may be also a thermal spread (not shown), which may be made from material having high thermal conductivity, sandwiched between the lower surface of the substrate 130 and the upper surface of the plane layer 125.
  • Other parts of the fifth embodiment are approximately the same as the first embodiment, not repeated any more herein.
  • As can be seen from above, the organic heat dissipating structure of the power module in the present disclosure may be provided with a bigger surface area. Therefore, the convective heat transfer resistance between the organic heat dissipating structure and the ambient may be substantially reduced, and further the heat dissipation performance of the organic heat dissipating structure may be improved. In addition, the organic heat dissipating structure of the power module in the present disclosure may, on the premise of ensuring normal heat dissipation of the power module, be reduced in its own height and space occupation. Particularly in constant pursuit of power density in the field of power supply, the requirement for reduction of a heatsink in size is becoming increasingly urgent. Compared with a conventional metal heatsink, the organic heat dissipating structure of the power module in the present disclosure is of great significance in realizing miniaturization of the power module.
  • Furthermore, the power module of the present disclosure needs neither a mechanical fixed structure (such as a spring clip and the like) to fix the organic heat dissipating structure and the power device nor thermal interface materials such as silicone grease, etc. So, problems in the prior art such as increases in entire thickness and design cost resulted thereby may be avoided,
  • FIG. 10 illustrates a flow chart of a method for manufacturing a powermodule according to an embodiment. As shown in FIG. 10, the method is used for manufacturing the power module according to any embodiment described above, and includes followings steps:
  • in step 101, a power device and a substrate are provided to be covered by a molding component, wherein the substrate has an upper surface and a lower surface;
  • in step 102, an organic heat dissipating structure having a plurality of organic heat dissipating protrusions is formed, wherein the organic heat dissipating structure is located on the upper surface side or the lower surface side of the substrate and configured to transfer heat generated by the power device outwardly.
  • FIG. 11 illustrates a flow chart of a method for manufacturing a power device according to an embodiment. As shown in FIG. 11, in the present embodiment, the method may further include steps as follows:
  • in step 201, a power device and a substrate are provided to be covered by a molding component; and
  • in step 202, an organic heat dissipating structure is formed on a surface of the molding component.
  • In the present embodiment, the heat generated by the power device is transferred outwardly through the organic heat dissipating structure via the molding component.
  • FIG. 12 illustrates a flow chart of a method for manufacturing a power module according to an embodiment. As shown in FIG. 12, in the present exemplary embodiment, when the organic heat dissipating structure is formed, following steps may be performed:
  • in step 5301, a plane layer is formed on the lower surface of the substrate by means of curing process, and
  • in step 5302, the organic heat dissipating protrusions is formed on a lower surface of the plane layer by means of printing or die casting process after the curing process.
  • FIG. 13 illustrates a flow chart of a method for manufacturing a power module according to an embodiment. As shown in FIG. 13, in the present exemplary embodiment, the organic heat dissipating structure may be formed by the following steps:
  • in step 401, the organic heat dissipating protrusions are independently made; and
  • in step 402, the organic heat dissipating protrusions are attached onto the lower surface of the substrate through a plane layer.
  • FIG. 14 illustrates a flow chart of a method for manufacturing a power module according to an embodiment. As shown in FIG. 14, in the present exemplary embodiment, the organic heat dissipating structure may be formed by the following steps:
  • in step 501, the organic heat dissipating protrusions are formed by means of any process selected from screen printing process, imprinting process, spraying or planting process, and film-pressing process.
  • Furthermore, in the present exemplary embodiment, the step of forming the organic heat dissipating protrusions by means of film-pressing process may include:
  • in step 502, a thermal conductive resin is provided on the lower surface of the substrate. Wherein the thermal conductive resin is provided with thermosetting organic material as a matrix and internally doped with a filler having high thermal conductivity, and the thermal conductive resin presents a form of liquid state or B-stage state; and
  • in step 503, the organic heat dissipating protrusions are formed, in a shape as required, by molds under high temperature and high pressure, wherein the thermal conductive resin is converted into a form of solid state.
  • It should be noted that, a lot of details described above in the embodiments of the power module are also applicable for implementing the embodiments of the method, and thus not repeated herein. Moreover, the sequence of steps described above is only for illustrative without any limitation, and can be modified as required according to actual needs.
  • What is mentioned above concretely illustrated and describes exemplary embodiments of the present disclosure. Nevertheless, it should be understood that the present disclosure is not limited to the embodiments disclosed herein. On the contrary, the present disclosure is intended to cover various modifications and equivalent arrangements within the spirit and scope of the appended claims.

Claims (16)

What is claimed is:
1. A power module, comprising:
a substrate having an upper surface and a lower surface;
at least one power device bonded to the upper surface of the substrate; and
an organic heat dissipating structure comprising a plane layer and a plurality of organic heat dissipating protrusions formed on a lower surface of the plane layer, wherein an upper surface of the plane layer is attached on the lower surface side of the substrate and configured to transfer heat generated by the power device outwardly;
wherein the organic heat dissipating protrusions and the plane layer are made from a same type of organic heat conduction material.
2. The power module of claim 1, wherein the organic heat dissipating protrusions and the plane layer are from organic heat conduction material serving as filler material, the filler material being provided with an organic material as a matrix and doped with particles having high thermal conductivity.
3. The power module of claim 1, wherein the power device and the substrate are coated with a molding component, and the heat generated by the power device is transferred outwardly through the organic heat dissipating structure via the substrate.
4. The power module of claim 1, wherein the plane layer is formed on the lower surface of the substrate by means of curing process, and the organic heat dissipating protrusions are formed on a lower surface of the plane layer by means of printing or die casting process after the curing process.
5. The power module of claim 1, wherein the organic heat dissipating protrusions are formed in pillar bumps, cylinders or fins.
6. The power module of claim 5, wherein the organic heat dissipating protrusions are formed in multiple rows and two adjacent rows are arranged staggered or in line with each other.
7. The power module of claim 1, wherein the organic heat conduction material has a thermal conductivity between 0.2 w/m·K and 20 w/m·K.
8. The power module of claim 2, wherein the organic heat conduction material is selected from a group consisting of epoxy resin, acrylic acid and organic silicon, and the particles having high thermal conductivity are made from electrically insulated material selected from a group consisting of aluminum oxide ceramic, silicon dioxide, aluminum nitride ceramic, graphite, metallic oxide, and electrically conductive metal particles.
9. The power module of claim 1, wherein a thermal spread is sandwiched between the lower surface of the substrate and the upper surface of the plane layer, the thermal spread is made from material having high thermal conductivity.
10. A method for manufacturing a power module, comprising:
providing at least one power device and a substrate having an upper surface and a lower surface; and
forming an organic heat dissipating structure having a plurality of organic heat dissipating protrusions, wherein the organic heat dissipating structure is located on the upper surface side or the lower surface side of the substrate and configured to transfer heat generated by the power device outwardly.
11. The method of claim 10, further comprising:
providing a molding component to cover the power device and the substrate,
wherein the organic heat dissipating structure is formed on the lower surface of the substrate, and the heat generated by the power device is transferred outwardly through the organic heat dissipating structure via the substrate
12. The method of claim 10, further comprising:
providing a molding component to cover the power device and the substrate; and
forming the organic heat dissipating structure on a surface of the molding component,
wherein the heat generated by the power device is transferred outwardly through the organic heat dissipating structure via the molding component.
13. The method of claim 10, wherein the step of forming an organic heat dissipating structure comprises:
forming a plane layer on the lower surface of the substrate by means of curing process, and
forming the organic heat dissipating protrusions on a lower surface of the plane layer by means of printing or die casting process after the curing process.
14. The method of claim 10, wherein the step of forming an organic heat dissipating structure comprises:
independently making the organic heat dissipating protrusions; and
attaching the organic heat dissipating protrusions onto the lower surface of the substrate through a plane layer.
15. The method of claim 10, wherein the step of forming an organic heat dissipating structure comprises:
forming the organic heat dissipating protrusions by means of any process selected from screen printing process, imprinting process, spraying or planting process, and film-pressing process.
16. The method of claim 15, wherein the step of forming the organic heat dissipating protrusions by means of film-pressing process comprises:
providing a thermal conductive resin on the lower surface of the substrate, the thermal conductive resin being provided with thermosetting organic material as a matrix and internally doped with a filler having high thermal conductivity, and the thermal conductive resin presenting a form of liquid state or B-stage state; and
forming the organic heat dissipating protrusions, in a shape as required, by molds under high temperature and high pressure, wherein the thermal conductive resin is converted into a form of solid state.
US16/373,984 2014-12-09 2019-04-03 Power module and method for manufacturing the same Abandoned US20190229033A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/373,984 US20190229033A1 (en) 2014-12-09 2019-04-03 Power module and method for manufacturing the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN201410748695.1 2014-12-09
CN201410748695.1A CN105742252B (en) 2014-12-09 2014-12-09 A kind of power module and its manufacturing method
US14/959,635 US10297523B2 (en) 2014-12-09 2015-12-04 Power module and method for manufacturing the same
US16/373,984 US20190229033A1 (en) 2014-12-09 2019-04-03 Power module and method for manufacturing the same

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US14/959,635 Continuation US10297523B2 (en) 2014-12-09 2015-12-04 Power module and method for manufacturing the same

Publications (1)

Publication Number Publication Date
US20190229033A1 true US20190229033A1 (en) 2019-07-25

Family

ID=56095640

Family Applications (2)

Application Number Title Priority Date Filing Date
US14/959,635 Active US10297523B2 (en) 2014-12-09 2015-12-04 Power module and method for manufacturing the same
US16/373,984 Abandoned US20190229033A1 (en) 2014-12-09 2019-04-03 Power module and method for manufacturing the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US14/959,635 Active US10297523B2 (en) 2014-12-09 2015-12-04 Power module and method for manufacturing the same

Country Status (3)

Country Link
US (2) US10297523B2 (en)
CN (1) CN105742252B (en)
TW (1) TWI657547B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110602923A (en) * 2019-08-30 2019-12-20 华为技术有限公司 Packaging module, packaging method thereof and electronic equipment

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107295755A (en) * 2016-04-13 2017-10-24 讯芯电子科技(中山)有限公司 Cover the manufacture method of copper ceramic substrate
US11488924B2 (en) * 2017-06-02 2022-11-01 Mitsubishi Electric Corporation Semiconductor element bonding substrate, semiconductor device, and power conversion device
DE102017214267A1 (en) * 2017-08-16 2019-02-21 Mahle International Gmbh Cooling device and method of manufacturing the cooling device
JP6852649B2 (en) * 2017-10-24 2021-03-31 株式会社オートネットワーク技術研究所 Circuit structure and manufacturing method of circuit structure
CN107706239A (en) * 2017-11-14 2018-02-16 山东聚芯光电科技有限公司 Gallium nitride high mobility transistor
CN109037175A (en) * 2018-07-17 2018-12-18 盛世瑶兰(深圳)科技有限公司 power device and its packaging method
US20200030956A1 (en) * 2018-07-30 2020-01-30 Chuan-Shan Huang Heatsink Structure for Pile Driver
USD903610S1 (en) 2019-08-28 2020-12-01 Carbice Corporation Flexible heat sink
USD904322S1 (en) 2019-08-28 2020-12-08 Carbice Corporation Flexible heat sink
USD906269S1 (en) 2019-08-28 2020-12-29 Carbice Corporation Flexible heat sink
US20210063099A1 (en) 2019-08-28 2021-03-04 Carbice Corporation Flexible and conformable polymer-based heat sinks and methods of making and using thereof
CN113556916B (en) * 2020-04-26 2023-02-28 台达电子企业管理(上海)有限公司 Data processing apparatus
CN113838821A (en) * 2020-06-24 2021-12-24 深圳第三代半导体研究院 Heat dissipation member for SiC planar packaging structure and preparation method thereof
CN112490207A (en) * 2020-12-10 2021-03-12 上能电气股份有限公司 Power device heat radiation structure and dc-to-ac converter
CN115939928B (en) * 2023-03-10 2023-06-16 四川富乐华半导体科技有限公司 Heat sink structure of semiconductor laser and preparation method thereof

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8902250A (en) * 1989-09-08 1991-04-02 Veg Gasinstituut Nv METHOD FOR PERFORMING A CHEMICAL REACTION AND REACTOR TO BE USED THERE
US20020015288A1 (en) * 2000-07-20 2002-02-07 Dibene Joseph T. High performance thermal/mechanical interface for fixed-gap references for high heat flux and power semiconductor applications
JP2001217359A (en) * 2000-01-31 2001-08-10 Shinko Electric Ind Co Ltd Radiator fin, manufacturing method thereof, and semiconductor device
DE10013844A1 (en) * 2000-03-15 2001-09-27 Infineon Technologies Ag Electric module cooling device e.g. for integrated circuits
US7019975B2 (en) * 2000-08-09 2006-03-28 Mitsubishi Materials Corporation Power module and power module with heat sink
US7027304B2 (en) * 2001-02-15 2006-04-11 Integral Technologies, Inc. Low cost thermal management device or heat sink manufactured from conductive loaded resin-based materials
EP1323980A1 (en) * 2001-12-31 2003-07-02 Von Roll Umwelttechnik AG Cooled crown
US20030183379A1 (en) * 2002-03-29 2003-10-02 Krassowski Daniel W. Optimized heat sink using high thermal conducting base and low thermal conducting fins
US7108055B2 (en) * 2002-03-29 2006-09-19 Advanced Energy Technology Inc. Optimized heat sink using high thermal conducting base and low thermal conducting fins
US20040150956A1 (en) * 2003-01-24 2004-08-05 Robert Conte Pin fin heat sink for power electronic applications
DE10327530A1 (en) * 2003-06-17 2005-01-20 Electrovac Gesmbh Device comprising at least one heat source formed by a functional element to be cooled, having at least one heat sink and at least one intermediate layer of a thermal conductive material between the heat source and the heat sink and thermal conductive mass, in particular for use in such a device
TWI237366B (en) * 2004-02-13 2005-08-01 Advanced Semiconductor Eng Thermal-enhance package and manufacturing method thereof
US7149088B2 (en) * 2004-06-18 2006-12-12 International Rectifier Corporation Half-bridge power module with insert molded heatsinks
JP4404726B2 (en) * 2004-08-31 2010-01-27 三菱電機株式会社 Automotive power converter
US7593230B2 (en) * 2005-05-05 2009-09-22 Sensys Medical, Inc. Apparatus for absorbing and dissipating excess heat generated by a system
US7307841B2 (en) * 2005-07-28 2007-12-11 Delphi Technologies, Inc. Electronic package and method of cooling electronics
GB0523474D0 (en) * 2005-11-18 2005-12-28 Lg Philips Displays B V Improvements in and relating to electrodes
KR101384426B1 (en) * 2006-03-13 2014-04-10 쇼와 덴코 가부시키가이샤 Base for power module
TWI449137B (en) * 2006-03-23 2014-08-11 Ceramtec Ag Traegerkoerper fuer bauelemente oder schaltungen
US20070236883A1 (en) * 2006-04-05 2007-10-11 Javier Ruiz Electronics assembly having heat sink substrate disposed in cooling vessel
DE102006027481C5 (en) * 2006-06-14 2012-11-08 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with mutually electrically insulated connection elements
US7486515B2 (en) * 2007-02-09 2009-02-03 Delphi Technologies, Inc. Fluid circulator for fluid cooled electronic device
US20080266801A1 (en) * 2007-04-30 2008-10-30 Rockwell Automation Technologies, Inc. Phase change cooled power electronic module
US7902957B2 (en) * 2007-04-30 2011-03-08 Rockwell Automation Technologies, Inc. Phase change cooled electrical resistor
KR101081724B1 (en) * 2007-05-18 2011-11-08 가부시키가이샤 산샤덴키세이사쿠쇼 arc discharge device
JP4586823B2 (en) * 2007-06-21 2010-11-24 トヨタ自動車株式会社 Film forming method, heat transfer member, power module, vehicle inverter, and vehicle
JP4631877B2 (en) * 2007-07-02 2011-02-16 スターライト工業株式会社 Resin heat sink
US7598588B2 (en) * 2007-10-26 2009-10-06 Hvvi Semiconductors, Inc Semiconductor structure and method of manufacture
US20100142154A1 (en) * 2008-12-04 2010-06-10 Microvision, Inc. Thermally Dissipative Enclosure Having Shock Absorbing Properties
US7787252B2 (en) * 2008-12-04 2010-08-31 Lsi Corporation Preferentially cooled electronic device
TWI389272B (en) * 2009-04-22 2013-03-11 Delta Electronics Inc Heat dissipating module of electronic component and assembling method thereof
CN201503870U (en) * 2009-07-07 2010-06-09 杭州皓玥科技有限公司 LED heat dissipation base
US8085531B2 (en) * 2009-07-14 2011-12-27 Specialty Minerals (Michigan) Inc. Anisotropic thermal conduction element and manufacturing method
US20110038122A1 (en) * 2009-08-12 2011-02-17 Rockwell Automation Technologies, Inc. Phase Change Heat Spreader Bonded to Power Module by Energetic Multilayer Foil
WO2011030754A1 (en) * 2009-09-09 2011-03-17 三菱マテリアル株式会社 Method for producing substrate for power module with heat sink, substrate for power module with heat sink, and power module
WO2011037794A2 (en) * 2009-09-25 2011-03-31 Northwestern University Thermoelectric compositions comprising nanoscale inclusions in a chalcogenide matrix
US8520389B2 (en) * 2009-12-02 2013-08-27 Hamilton Sundstrand Corporation Power semiconductor module for wide temperature applications
FR2965699B1 (en) * 2010-10-05 2013-03-29 Commissariat Energie Atomique DEVICE FOR THERMAL DISSIPATION FOR AT LEAST ONE ELECTRONIC COMPONENT AND CORRESPONDING METHOD
US8446726B2 (en) * 2010-10-28 2013-05-21 Infineon Technologies Ag Semiconductor module having an insert and method for producing a semiconductor module having an insert
DE102010043446B3 (en) * 2010-11-05 2012-01-12 Semikron Elektronik Gmbh & Co. Kg Performance semiconductor system
US8804339B2 (en) * 2011-02-28 2014-08-12 Toyota Motor Engineering & Manufacturing North America, Inc. Power electronics assemblies, insulated metal substrate assemblies, and vehicles incorporating the same
KR101214762B1 (en) * 2011-04-28 2013-01-21 삼성전기주식회사 Radiant heat substrate
KR101255935B1 (en) * 2011-07-08 2013-04-23 삼성전기주식회사 Power Module Package and Method for Manufacturing the same
JP5588956B2 (en) * 2011-11-30 2014-09-10 株式会社 日立パワーデバイス Power semiconductor device
US8730674B2 (en) * 2011-12-12 2014-05-20 Toyota Motor Engineering & Manufacturing North America, Inc. Magnetic fluid cooling devices and power electronics assemblies
CN202405323U (en) * 2012-01-04 2012-08-29 四川鋈新能源科技有限公司 Structure for directly packaging LED chips on vapor chamber and lamp employing same
CN104520737B (en) * 2012-08-06 2017-02-22 柯尼卡美能达株式会社 Light-reflective film, and light reflector produced using same
JP5941787B2 (en) * 2012-08-09 2016-06-29 日立オートモティブシステムズ株式会社 Power module and method for manufacturing power module
KR102094566B1 (en) * 2012-08-31 2020-03-27 미쓰비시 마테리알 가부시키가이샤 Power module substrate and power module
KR101504331B1 (en) * 2013-03-04 2015-03-19 삼성전자주식회사 Light emitting device package and package substrate
WO2014136484A1 (en) * 2013-03-07 2014-09-12 住友ベークライト株式会社 Apparatus, composition for adhesive, and adhesive sheet
US9147631B2 (en) * 2013-04-17 2015-09-29 Infineon Technologies Austria Ag Semiconductor power device having a heat sink
KR20150002361A (en) * 2013-06-28 2015-01-07 삼성전자주식회사 Semiconductor light emitting device and method for manufacturing method for light source module
KR20150021838A (en) * 2013-08-21 2015-03-03 삼성전자주식회사 Led driving apparatus and lighting apparatus
FR3011067B1 (en) * 2013-09-23 2016-06-24 Commissariat Energie Atomique APPARATUS COMPRISING A FUNCTIONAL COMPONENT LIKELY TO BE OVERHEAD WHEN OPERATING AND A COMPONENT COOLING SYSTEM
DE102013112826B4 (en) * 2013-11-20 2021-08-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelectronic component comprising an adhesive layer and a method for producing an adhesive layer in an optoelectronic component
US9330998B2 (en) * 2014-04-18 2016-05-03 Laird Technologies, Inc. Thermal interface material assemblies and related methods

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110602923A (en) * 2019-08-30 2019-12-20 华为技术有限公司 Packaging module, packaging method thereof and electronic equipment

Also Published As

Publication number Publication date
US10297523B2 (en) 2019-05-21
TWI657547B (en) 2019-04-21
US20160165749A1 (en) 2016-06-09
CN105742252B (en) 2019-05-07
TW201622083A (en) 2016-06-16
CN105742252A (en) 2016-07-06

Similar Documents

Publication Publication Date Title
US20190229033A1 (en) Power module and method for manufacturing the same
US20160254217A1 (en) Package module of power conversion circuit and manufacturing method thereof
US11387159B2 (en) Chip package
US20150008570A1 (en) Semiconductor device
CN103117275A (en) Chip packaging structure and chip packaging method
US9728484B2 (en) Power module package and method for manufacturing the same
JP2007305702A (en) Semiconductor device and its manufacturing method
KR102172689B1 (en) Semiconductor package and method of fabricating the same
CN111261598A (en) Packaging structure and power module applicable to same
WO2012081434A1 (en) Semiconductor device
US11626351B2 (en) Semiconductor package with barrier to contain thermal interface material
US9293390B2 (en) Heat radiation structure for semiconductor device
US9589863B2 (en) Power module and thermal interface structure thereof
JP2013016606A (en) Cooling structure of power module
JP2022018033A (en) Semiconductor module, power conversion device, and manufacturing method of semiconductor module
CN110676232B (en) Semiconductor device packaging structure, manufacturing method thereof and electronic equipment
JP2012074425A (en) Power module
JP2014239176A (en) Cooling member and semiconductor device
US20210305166A1 (en) Power semiconductor package with improved performance
JP2013229535A (en) Semiconductor device
JP2013229534A (en) Semiconductor device
TW201242123A (en) Structure of the LED package
CN202197447U (en) Metal substrate structure provided with LED
KR20150048459A (en) Power Module Package
US20230014380A1 (en) Semiconductor Power Module with Two Different Potting Materials and a Method for Fabricating the Same

Legal Events

Date Code Title Description
AS Assignment

Owner name: DELTA ELECTRONICS,INC., CHINA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HONG, SHOUYU;ZHAO, ZHENQING;SIGNING DATES FROM 20190325 TO 20190401;REEL/FRAME:048781/0092

STPP Information on status: patent application and granting procedure in general

Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: FINAL REJECTION MAILED

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION