CN105734672A - 一种在含氧气氛下生长高质量碳化硅晶体的方法 - Google Patents
一种在含氧气氛下生长高质量碳化硅晶体的方法 Download PDFInfo
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106400116A (zh) * | 2016-10-08 | 2017-02-15 | 中国科学院上海硅酸盐研究所 | 高质量碳化硅晶体生长用斜籽晶托以及生长高质量碳化硅晶体的方法 |
CN106480504A (zh) * | 2016-12-09 | 2017-03-08 | 河北同光晶体有限公司 | 一种降低大直径SiC单晶内应力的炉后退火方法 |
CN108193282A (zh) * | 2017-11-14 | 2018-06-22 | 山东天岳先进材料科技有限公司 | 一种高纯碳化硅原料的合成方法及其应用 |
CN111690986A (zh) * | 2020-06-22 | 2020-09-22 | 江苏超芯星半导体有限公司 | 一种晶体与晶体托的分离方法 |
CN112030232A (zh) * | 2020-09-10 | 2020-12-04 | 中电化合物半导体有限公司 | 一种碳化硅单晶生长坩埚及生长方法 |
CN113215661A (zh) * | 2021-05-12 | 2021-08-06 | 中科汇通(内蒙古)投资控股有限公司 | 粉料和生长气氛中硅含量可调的碳化硅单晶生长装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08208394A (ja) * | 1995-02-02 | 1996-08-13 | Nippon Steel Corp | 単結晶炭化珪素の製造方法 |
JP2006240968A (ja) * | 2005-03-07 | 2006-09-14 | Sumitomo Electric Ind Ltd | 単結晶成長方法、その方法により得られるIII族窒化物単結晶およびSiC単結晶 |
DE102005031692A1 (de) * | 2005-07-05 | 2007-01-11 | Sicrystal Ag | Hochohmiger Siliciumcarbid-Einkristall und Verfahren zu dessen Herstellung |
US20080115719A1 (en) * | 2006-09-27 | 2008-05-22 | Ii-Vi Incorporated | Reduction of carbon inclusions in sublimation grown SiC single crystals |
CN101445392A (zh) * | 2008-12-31 | 2009-06-03 | 中南大学 | 一种石墨基体无裂纹TaC涂层及其制造方法 |
CN101896646A (zh) * | 2007-12-12 | 2010-11-24 | 陶氏康宁公司 | 通过升华/凝结方法生产大的均匀碳化硅晶锭的方法 |
CN102965733A (zh) * | 2012-11-02 | 2013-03-13 | 中国科学院物理研究所 | 一种无石墨包裹物的导电碳化硅晶体生长工艺 |
WO2013177496A1 (en) * | 2012-05-24 | 2013-11-28 | Ii-Vi Incorporated | Vanadium compensated, si sic single crystals of nu and pi type and the crystal growth process thereof |
-
2014
- 2014-12-10 CN CN201410758917.8A patent/CN105734672B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08208394A (ja) * | 1995-02-02 | 1996-08-13 | Nippon Steel Corp | 単結晶炭化珪素の製造方法 |
JP2006240968A (ja) * | 2005-03-07 | 2006-09-14 | Sumitomo Electric Ind Ltd | 単結晶成長方法、その方法により得られるIII族窒化物単結晶およびSiC単結晶 |
DE102005031692A1 (de) * | 2005-07-05 | 2007-01-11 | Sicrystal Ag | Hochohmiger Siliciumcarbid-Einkristall und Verfahren zu dessen Herstellung |
US20080115719A1 (en) * | 2006-09-27 | 2008-05-22 | Ii-Vi Incorporated | Reduction of carbon inclusions in sublimation grown SiC single crystals |
CN101896646A (zh) * | 2007-12-12 | 2010-11-24 | 陶氏康宁公司 | 通过升华/凝结方法生产大的均匀碳化硅晶锭的方法 |
CN101445392A (zh) * | 2008-12-31 | 2009-06-03 | 中南大学 | 一种石墨基体无裂纹TaC涂层及其制造方法 |
WO2013177496A1 (en) * | 2012-05-24 | 2013-11-28 | Ii-Vi Incorporated | Vanadium compensated, si sic single crystals of nu and pi type and the crystal growth process thereof |
CN102965733A (zh) * | 2012-11-02 | 2013-03-13 | 中国科学院物理研究所 | 一种无石墨包裹物的导电碳化硅晶体生长工艺 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106400116A (zh) * | 2016-10-08 | 2017-02-15 | 中国科学院上海硅酸盐研究所 | 高质量碳化硅晶体生长用斜籽晶托以及生长高质量碳化硅晶体的方法 |
CN106400116B (zh) * | 2016-10-08 | 2019-01-08 | 中国科学院上海硅酸盐研究所 | 高质量碳化硅晶体生长用斜籽晶托以及生长高质量碳化硅晶体的方法 |
CN106480504A (zh) * | 2016-12-09 | 2017-03-08 | 河北同光晶体有限公司 | 一种降低大直径SiC单晶内应力的炉后退火方法 |
CN106480504B (zh) * | 2016-12-09 | 2018-10-12 | 河北同光晶体有限公司 | 一种降低大直径SiC单晶内应力的炉后退火方法 |
CN108193282A (zh) * | 2017-11-14 | 2018-06-22 | 山东天岳先进材料科技有限公司 | 一种高纯碳化硅原料的合成方法及其应用 |
CN111690986A (zh) * | 2020-06-22 | 2020-09-22 | 江苏超芯星半导体有限公司 | 一种晶体与晶体托的分离方法 |
CN111690986B (zh) * | 2020-06-22 | 2021-05-25 | 江苏超芯星半导体有限公司 | 一种晶体与晶体托的分离方法 |
CN112030232A (zh) * | 2020-09-10 | 2020-12-04 | 中电化合物半导体有限公司 | 一种碳化硅单晶生长坩埚及生长方法 |
CN112030232B (zh) * | 2020-09-10 | 2021-07-23 | 中电化合物半导体有限公司 | 一种碳化硅单晶生长坩埚及生长方法 |
CN113215661A (zh) * | 2021-05-12 | 2021-08-06 | 中科汇通(内蒙古)投资控股有限公司 | 粉料和生长气氛中硅含量可调的碳化硅单晶生长装置 |
CN113215661B (zh) * | 2021-05-12 | 2022-02-11 | 中科汇通(内蒙古)投资控股有限公司 | 粉料和生长气氛中硅含量可调的碳化硅单晶生长装置 |
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Address after: Room 301, Building 9, Tianrong Street, Daxing Biomedical Industry Base, Zhongguancun Science and Technology Park, Daxing District, Beijing 102600 Co-patentee after: XINJIANG TANKEBLUE SEMICONDUCTOR Co.,Ltd. Patentee after: TANKEBLUE SEMICONDUCTOR Co.,Ltd. Address before: 100190, room 1, building 66, No. 2005 East Zhongguancun Road, Beijing, Haidian District Co-patentee before: XINJIANG TANKEBLUE SEMICONDUCTOR Co.,Ltd. Patentee before: TANKEBLUE SEMICONDUCTOR Co.,Ltd. |
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Application publication date: 20160706 Assignee: Shenzhen Reinvested Tianke Semiconductor Co.,Ltd. Assignor: TANKEBLUE SEMICONDUCTOR Co.,Ltd.|XINJIANG TANKEBLUE SEMICONDUCTOR Co.,Ltd. Contract record no.: X2023990000679 Denomination of invention: A Method for Growing High Quality Silicon Carbide Crystals in an Oxygen Containing Atmosphere Granted publication date: 20181130 License type: Common License Record date: 20230725 |