CN102965733A - 一种无石墨包裹物的导电碳化硅晶体生长工艺 - Google Patents
一种无石墨包裹物的导电碳化硅晶体生长工艺 Download PDFInfo
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CN201210432144.5A CN102965733B (zh) | 2012-11-02 | 2012-11-02 | 一种无石墨包裹物的导电碳化硅晶体生长工艺 |
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CN201210432144.5A CN102965733B (zh) | 2012-11-02 | 2012-11-02 | 一种无石墨包裹物的导电碳化硅晶体生长工艺 |
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CN102965733A true CN102965733A (zh) | 2013-03-13 |
CN102965733B CN102965733B (zh) | 2015-11-18 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105658847A (zh) * | 2014-02-28 | 2016-06-08 | 新日铁住金株式会社 | 外延碳化硅晶片的制造方法 |
CN105734672A (zh) * | 2014-12-10 | 2016-07-06 | 北京天科合达半导体股份有限公司 | 一种在含氧气氛下生长高质量碳化硅晶体的方法 |
CN113668058A (zh) * | 2021-08-25 | 2021-11-19 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | 一种降低氮掺杂整体不均匀性的n型碳化硅晶体的生长方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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EP1333482A2 (en) * | 2002-01-31 | 2003-08-06 | Osaka Prefecture | Method for manufacturing a semiconductor silicon carbide on insulator substrate (SOI) and apparatus therefore |
CN1829829A (zh) * | 2003-07-28 | 2006-09-06 | 克里公司 | 通过在含氢气氛中的升华生长减少碳化硅晶体中的氮含量 |
CN1849417A (zh) * | 2003-07-28 | 2006-10-18 | 克里公司 | 在含氢环境中超高纯碳化硅晶体的生长 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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EP1333482A2 (en) * | 2002-01-31 | 2003-08-06 | Osaka Prefecture | Method for manufacturing a semiconductor silicon carbide on insulator substrate (SOI) and apparatus therefore |
CN1829829A (zh) * | 2003-07-28 | 2006-09-06 | 克里公司 | 通过在含氢气氛中的升华生长减少碳化硅晶体中的氮含量 |
CN1849417A (zh) * | 2003-07-28 | 2006-10-18 | 克里公司 | 在含氢环境中超高纯碳化硅晶体的生长 |
Non-Patent Citations (1)
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Q. LI, ET AL.: "Properties of 6H–SiC crystals grown by hydrogen-assisted physical vapor transport", 《APPLIED PHYSICS LETTERS》 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105658847A (zh) * | 2014-02-28 | 2016-06-08 | 新日铁住金株式会社 | 外延碳化硅晶片的制造方法 |
CN105658847B (zh) * | 2014-02-28 | 2018-08-10 | 昭和电工株式会社 | 外延碳化硅晶片的制造方法 |
CN105734672A (zh) * | 2014-12-10 | 2016-07-06 | 北京天科合达半导体股份有限公司 | 一种在含氧气氛下生长高质量碳化硅晶体的方法 |
CN105734672B (zh) * | 2014-12-10 | 2018-11-30 | 北京天科合达半导体股份有限公司 | 一种在含氧气氛下生长高质量碳化硅晶体的方法 |
CN113668058A (zh) * | 2021-08-25 | 2021-11-19 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | 一种降低氮掺杂整体不均匀性的n型碳化硅晶体的生长方法 |
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Effective date of registration: 20191225 Address after: Room 301, Building 9, Tianrong Street, Daxing Biomedical Industry Base, Zhongguancun Science and Technology Park, Daxing District, Beijing 102600 Patentee after: TANKEBLUE SEMICONDUCTOR Co.,Ltd. Address before: 100080 No.8, South 3rd Street, Zhongguancun, Haidian District, Beijing, China Patentee before: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES |
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Application publication date: 20130313 Assignee: Shenzhen Reinvested Tianke Semiconductor Co.,Ltd. Assignor: TANKEBLUE SEMICONDUCTOR Co.,Ltd. Contract record no.: X2023990000683 Denomination of invention: A growth process of conductive silicon carbide crystals without graphite inclusions Granted publication date: 20151118 License type: Common License Record date: 20230725 |
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