CN105723461A - 相变存储器的数据存储方法及控制装置 - Google Patents

相变存储器的数据存储方法及控制装置 Download PDF

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Publication number
CN105723461A
CN105723461A CN201480037842.2A CN201480037842A CN105723461A CN 105723461 A CN105723461 A CN 105723461A CN 201480037842 A CN201480037842 A CN 201480037842A CN 105723461 A CN105723461 A CN 105723461A
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CN
China
Prior art keywords
data
pulse signal
stored
memory cell
phase transition
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Pending
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CN201480037842.2A
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English (en)
Inventor
李震
何强
缪向水
徐荣刚
赵俊峰
韦竹林
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Publication of CN105723461A publication Critical patent/CN105723461A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0097—Erasing, e.g. resetting, circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse

Abstract

本发明实施例提供一种相变存储器的数据存储方法及控制装置。本发明的相变存储器的数据存储方法包括：获取待存储数据，该待存储数据为多位数据；根据该待存储数据，产生擦脉冲信号和写脉冲信号；该写脉冲信号为包括至少两个连续脉冲的信号；该至少两个连续脉冲的间隔相同，且该至少两个连续脉冲的间隔为根据该待存储数据而确定的值；将该擦脉冲信号施加至该相变存储器的存储单元使该存储单元变为晶态；将该写脉冲信号施加至该存储单元使该存储单元变为第一电阻值的非晶态，以通过该存储单元的第一电阻值的非晶态表征所述待存储数据。本发明实施例可解决多值存储时的热串扰问题。

Description

PCT国内申请，说明书已公开。

Claims (1)

  1. PCT国内申请，权利要求书已公开。
CN201480037842.2A 2014-07-24 2014-07-24 相变存储器的数据存储方法及控制装置 Pending CN105723461A (zh)

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PCT/CN2014/082918 WO2016011638A1 (zh) 2014-07-24 2014-07-24 相变存储器的数据存储方法及控制装置

Publications (1)

Publication Number Publication Date
CN105723461A true CN105723461A (zh) 2016-06-29

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Country Link
US (1) US10083749B2 (zh)
JP (1) JP6388422B2 (zh)
KR (1) KR20170031746A (zh)
CN (1) CN105723461A (zh)
WO (1) WO2016011638A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10755781B2 (en) * 2018-06-06 2020-08-25 Micron Technology, Inc. Techniques for programming multi-level self-selecting memory cell

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101447226A (zh) * 2007-11-29 2009-06-03 三星电子株式会社 操作相变存储装置的方法
CN101699562A (zh) * 2009-11-23 2010-04-28 中国科学院上海微系统与信息技术研究所 一种相变存储器的擦写方法
CN103714852A (zh) * 2013-12-18 2014-04-09 华中科技大学 一种精确控制微纳尺寸相变材料非晶化率连续变化的方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4228524A (en) * 1979-01-24 1980-10-14 Harris Corporation Multilevel sequence of erase pulses for amorphous memory devices
JP4285899B2 (ja) 2000-10-10 2009-06-24 三菱電機株式会社 溝を有する半導体装置
JP3722287B2 (ja) 2002-06-11 2005-11-30 アサ電子工業株式会社 リミットスイッチ
US6813177B2 (en) 2002-12-13 2004-11-02 Ovoynx, Inc. Method and system to store information
KR100498493B1 (ko) 2003-04-04 2005-07-01 삼성전자주식회사 저전류 고속 상변화 메모리 및 그 구동 방식
US7327602B2 (en) 2004-10-07 2008-02-05 Ovonyx, Inc. Methods of accelerated life testing of programmable resistance memory elements
JP2006260703A (ja) 2005-03-18 2006-09-28 Sharp Corp 不揮発性半導体記憶装置
JP4313372B2 (ja) * 2005-05-11 2009-08-12 シャープ株式会社 不揮発性半導体記憶装置
JP2007080311A (ja) * 2005-09-12 2007-03-29 Sony Corp 記憶装置及び半導体装置
KR100738092B1 (ko) 2006-01-05 2007-07-12 삼성전자주식회사 상전이 메모리 소자의 멀티-비트 동작 방법
US7626858B2 (en) 2006-06-09 2009-12-01 Qimonda North America Corp. Integrated circuit having a precharging circuit
US7903447B2 (en) 2006-12-13 2011-03-08 Macronix International Co., Ltd. Method, apparatus and computer program product for read before programming process on programmable resistive memory cell
JP5539610B2 (ja) * 2007-03-02 2014-07-02 ピーエスフォー ルクスコ エスエイアールエル 相変化メモリのプログラム方法と読み出し方法
US20080266802A1 (en) 2007-04-30 2008-10-30 Rockwell Automation Technologies, Inc. Phase change cooled electrical connections for power electronic devices
KR101274190B1 (ko) 2007-07-30 2013-06-14 삼성전자주식회사 저항체를 이용한 비휘발성 메모리 장치
KR101390337B1 (ko) 2007-09-13 2014-04-29 삼성전자주식회사 멀티-레벨 상변환 메모리 장치, 그것의 프로그램 방법,그리고 그것을 포함한 메모리 시스템
KR20090095313A (ko) 2008-03-05 2009-09-09 삼성전자주식회사 저항성 메모리 소자의 프로그래밍 방법
KR101430171B1 (ko) 2008-07-18 2014-08-14 삼성전자주식회사 다중치 상변화 메모리 소자
CN101359504B (zh) 2008-08-05 2011-08-10 中国科学院上海微系统与信息技术研究所 高速写入相变存储器及其高速写入方法
US20100067290A1 (en) 2008-09-15 2010-03-18 Savransky Semyon D Method of programming of phase-change memory and associated devices and materials
US8036014B2 (en) 2008-11-06 2011-10-11 Macronix International Co., Ltd. Phase change memory program method without over-reset
JP2010123164A (ja) 2008-11-18 2010-06-03 Elpida Memory Inc 半導体記憶装置及びその制御方法
CN101763891A (zh) * 2008-12-24 2010-06-30 复旦大学 一种相变存储器单元及其操作方法
WO2010076834A1 (en) 2008-12-31 2010-07-08 Ferdinando Bedeschi Reliable set operation for phase-change memory cell
US8107283B2 (en) 2009-01-12 2012-01-31 Macronix International Co., Ltd. Method for setting PCRAM devices
US8305795B2 (en) * 2009-04-27 2012-11-06 Panasonic Corporation Nonvolatile variable resistance memory element writing method, and nonvolatile variable resistance memory device
WO2011121970A1 (ja) * 2010-03-30 2011-10-06 パナソニック株式会社 抵抗変化型不揮発性記憶素子のフォーミング方法及び抵抗変化型不揮発性記憶装置
CN102142517B (zh) 2010-12-17 2017-02-08 华中科技大学 一种低热导率的多层相变材料
WO2013080499A1 (ja) * 2011-12-02 2013-06-06 パナソニック株式会社 抵抗変化型不揮発性記憶素子の書き込み方法および抵抗変化型不揮発性記憶装置
CN103093815A (zh) * 2013-01-10 2013-05-08 华中科技大学 一种多值相变随机存储器的存储单元及操作方法
US9378821B1 (en) * 2013-01-18 2016-06-28 Cypress Semiconductor Corporation Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells
CN103093816B (zh) 2013-01-29 2015-08-05 中国科学院苏州纳米技术与纳米仿生研究所 相变存储器驱动电路及置位和复位方法
US9324428B1 (en) 2015-01-25 2016-04-26 Macronix International Co., Ltd. Memory device and operation method thereof
KR102251814B1 (ko) 2015-02-06 2021-05-13 삼성전자주식회사 메모리 장치, 그것의 동작 및 제어 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101447226A (zh) * 2007-11-29 2009-06-03 三星电子株式会社 操作相变存储装置的方法
CN101699562A (zh) * 2009-11-23 2010-04-28 中国科学院上海微系统与信息技术研究所 一种相变存储器的擦写方法
CN103714852A (zh) * 2013-12-18 2014-04-09 华中科技大学 一种精确控制微纳尺寸相变材料非晶化率连续变化的方法

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US20170133090A1 (en) 2017-05-11
KR20170031746A (ko) 2017-03-21
JP2017527941A (ja) 2017-09-21
US10083749B2 (en) 2018-09-25
WO2016011638A1 (zh) 2016-01-28
JP6388422B2 (ja) 2018-09-12

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Application publication date: 20160629