CN105702586B - 一种薄膜晶体管、阵列基板、其制作方法及显示装置 - Google Patents

一种薄膜晶体管、阵列基板、其制作方法及显示装置 Download PDF

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CN105702586B
CN105702586B CN201610278253.4A CN201610278253A CN105702586B CN 105702586 B CN105702586 B CN 105702586B CN 201610278253 A CN201610278253 A CN 201610278253A CN 105702586 B CN105702586 B CN 105702586B
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宁策
杨维
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BOE Technology Group Co Ltd
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Abstract

本发明公开了一种薄膜晶体管、阵列基板、其制作方法及显示装置，通过一次构图工艺形成有源层、源漏极以及刻蚀阻挡层的图形，所述刻蚀阻挡层覆盖所述有源层且位于所述源漏极之间，即通过一次构图工艺同时完成了有源层、源漏极和刻蚀阻挡层三个图形的构图，减少了薄膜晶体管制作过程中的构图次数，简化了生产工艺，节约了生产成本。

Description

一种薄膜晶体管、阵列基板、其制作方法及显示装置
技术领域
本发明涉及显示技术领域，尤其涉及一种薄膜晶体管、阵列基板、其制作方法及显示装置。
背景技术
21世纪在显示领域是平板显示的时代。诸如液晶显示面板(LCD，Liquid CrystalDisplay)、电致发光(EL，electroluminescence)显示面板以及电子纸等显示装置已为人所熟知。在这些显示装置中具有控制各像素开关的薄膜晶体管(TFT，Thin FilmTransistor)，其中TFT按结构的不同可以分为：顶栅型TFT和底栅型TFT。
以底栅型TFT为例，其制作工艺如下：首先，在衬底基板上通过一次构图工艺形成栅极的图形，在栅极的图形上形成栅绝缘层；然后，在栅绝缘层上通过一次构图工艺形成有源层的图形；之后，在有源层的图形上通过一次构图工艺形成源漏极的图形。可以看到，在TFT的制作过程中需要采用三次构图工艺，其制作过程使用的掩膜板次数较多，不利于提高生产效率及降低生产成本。
发明内容
有鉴于此，本发明实施例提供了一种薄膜晶体管、阵列基板、其制作方法及显示装置，用以解决现有的制作薄膜晶体管时使用掩膜板次数较多，生产效率低的问题。
因此，本发明实施例提供了一种薄膜晶体管的制作方法，包括：
在衬底基板上通过一次构图工艺形成有源层、源漏极以及刻蚀阻挡层的图形，所述刻蚀阻挡层覆盖所述有源层且位于所述源漏极之间。
在一种可能的实现方式中，本发明实施例提供的上述制作方法中，所述在衬底基板上通过一次构图工艺形成有源层、源漏极以及刻蚀阻挡层的图形，具体包括：
在所述衬底基板上依次形成氧化物半导体薄膜和金属薄膜；
在所述金属薄膜上形成光刻胶，使用掩膜板对所述光刻胶曝光显影，得到光刻胶完全去除区域、光刻胶部分保留区域以及光刻胶完全保留区域；所述光刻胶完全去除区域对应于形成所述刻蚀阻挡层的图形区域，所述光刻胶完全保留区域对应于形成所述源漏极的图形区域；
在所述光刻胶完全去除区域的氧化物半导体薄膜上，形成覆盖在所述有源层且位于所述源漏极之间的刻蚀阻挡层的图形；
利用所述光刻胶完全保留区域的光刻胶和所述刻蚀阻挡层的遮挡，去除掉所述光刻胶部分保留区域的所述氧化物半导体薄膜和金属薄膜，形成所述有源层和源漏极的图形。
在一种可能的实现方式中，本发明实施例提供的上述制作方法中，所述在所述光刻胶完全去除区域的氧化物半导体薄膜上，形成覆盖在所述有源层且位于所述源漏极之间的刻蚀阻挡层的图形，具体包括：
采用刻蚀工艺去除掉所述光刻胶完全去除区域的金属薄膜，得到位于所述源漏极之间沟道；
利用所述光刻胶完全保留区域和光刻胶部分保留区域的光刻胶的遮挡，采用离子注入工艺在所述沟道内形成刻蚀阻挡层的图形。
在一种可能的实现方式中，本发明实施例提供的上述制作方法中，所述利用所述光刻胶完全保留区域的光刻胶和所述刻蚀阻挡层的遮挡，去除掉所述光刻胶部分保留区域的所述氧化物半导体薄膜和金属薄膜，形成所述有源层和源漏极的图形，具体包括：
采用灰化工艺去除掉所述光刻胶部分保留区域的光刻胶，同时减薄光刻胶完全保留区域的光刻胶；
采用刻蚀工艺去除掉所述光刻胶部分保留区域的金属薄膜和氧化物半导体薄膜，得到所述有源层的图形；
剥离所述光刻胶完全保留区域的光刻胶，得到所述源漏极的图形。
在一种可能的实现方式中，本发明实施例提供的上述制作方法中，所述掩膜板为半色调掩膜板或灰色调掩膜板。
在一种可能的实现方式中，本发明实施例提供的上述制作方法中，所述在衬底基板上通过一次构图工艺形成有源层、源漏极以及刻蚀阻挡层的图形之前，还包括：
在衬底基板上通过一次构图工艺形成栅极的图形；
在形成有所述栅极的图形的衬底基板上形成栅绝缘层。
在一种可能的实现方式中，本发明实施例提供的上述制作方法中，在所述在衬底基板上通过一次构图工艺形成有源层、源漏极以及刻蚀阻挡层的图形之后，还包括：
在所述衬底基板上形成保护层后进行退火工艺；和/或，
采用等离子体对所述刻蚀阻挡层进行处理。
在一种可能的实现方式中，本发明实施例提供的上述制作方法中，所述在衬底基板上通过一次构图工艺形成有源层、源漏极以及刻蚀阻挡层的图形之后，还包括：
在衬底基板上形成栅绝缘层；
在所述栅绝缘层上通过一次构图工艺形成栅极的图形。
在一种可能的实现方式中，本发明实施例提供的上述制作方法中，在所述在衬底基板上通过一次构图工艺形成有源层、源漏极以及刻蚀阻挡层的图形之后，还包括：
在所述衬底基板上形成栅绝缘层后进行退火工艺；和/或，
采用等离子体对所述刻蚀阻挡层进行处理。
本发明实施例还提供了一种薄膜晶体管，所述薄膜晶体管采用本发明实施例提供的上述制作方法制得。
本发明实施例还提供了一种阵列基板，包括：本发明实施例提供的上述薄膜晶体管，以及与所述薄膜晶体管中的漏极连接的像素电极。
本发明实施例提供的一种阵列基板的制作方法，包括：
制作本发明实施例提供的上述薄膜晶体管；
在所述薄膜晶体管上通过一次构图工艺形成像素电极的图形。
本发明实施例提供的一种显示装置，包括：本发明实施例提供的上述阵列基板。
本发明实施例的有益效果包括：
本发明实施例提供的一种薄膜晶体管、阵列基板、其制作方法及显示装置，通过一次构图工艺形成有源层、源漏极以及刻蚀阻挡层的图形，所述刻蚀阻挡层覆盖所述有源层且位于所述源漏极之间，即通过一次构图工艺同时完成了有源层、源漏极和刻蚀阻挡层三个图形的构图，减少了薄膜晶体管制作过程中的构图次数，简化了生产工艺，节约了生产成本。
附图说明
图1为本发明实施例提供的薄膜晶体管的制作方法的流程图；
图2a-图2f分别为本发明实施例提供薄膜晶体管的制作方法中各步骤执行后的结构示意图；
图3a和图3b分别为本发明实施例提供的薄膜晶体管的结构示意图；
图4a和图4b分别为本发明实施例提供的阵列基板的结构示意图；
图5和图6分别为本发明实施例提供的阵列基板的制作方法的流程图。
具体实施方式
下面结合附图，对本发明实施例提供的薄膜晶体管、阵列基板、其制作方法及显示装置的具体实施方式进行详细地说明。
附图中各层薄膜厚度和区域形状大小不反映薄膜晶体管的真实比例，目的只是示意说明本发明内容。
本发明实施例提供的一种薄膜晶体管的制作方法，包括以下步骤：在衬底基板上通过一次构图工艺形成有源层、源漏极以及刻蚀阻挡层的图形，所述刻蚀阻挡层覆盖所述有源层且位于所述源漏极之间。
在本发明实施例提供的上述薄膜晶体管的制作方法中，由于通过一次构图工艺同时完成了有源层、源漏极和刻蚀阻挡层三个图形的构图，可以减少薄膜晶体管制作过程中的构图次数，简化了生产工艺，节约了生产成本。
目前，由于非晶硅(a-Si)易于在低温下大面积制备，其制作技术较为成熟，因此，目前在薄膜晶体管中广泛使用非晶硅制作有源层。但a-Si材料的带隙只有1.7V，且对可见光不透明，并在可见光范围内具有光敏性，因此需要在器件中增加不透明金属掩模板或黑矩阵来遮挡可见光对于非晶硅的照射，这会增加应用薄膜晶体管的器件的制作工艺复杂性，带来成本的提高，也会降低可靠性和应用薄膜晶体管的显示器件的开口率。进而，在器件中为了获得足够的亮度，就需要增加光源光强，从而还会增加功率消耗。并且氢化非晶硅半导体的迁移率很难超过1cm2·V-1·s-1。随着薄膜晶体管性能的不断提高，氢化非晶硅薄膜晶体管的制作技术已经成熟，很难再有突破性的提高。因此，现有的氢化非晶硅薄膜晶体管已经很难满足尺寸不断增大的液晶电视和更高性能的驱动电路的需求。
而虽然多晶硅制作的有源层可以提升薄膜晶体管的性能，但其制备工艺复杂，成本高，同时在可见光波段亦不透明，也会带来与上述非晶硅类似的问题。
基于此，本发明实施例提供的上述薄膜晶体管的制作方法中，利用了诸如铟镓锌氧化物(IGZO，Indium Gallium Zinc Oxide)的氧化物半导体材料来制作有源层，一方面可以克服非晶硅迁移率低和多晶硅工艺复杂的不足，另一方面可以在制作时减少构图次数，节省制作成本。
具体地，在具体实施时，本发明实施例提供的上述薄膜晶体管的制作方法中，在衬底基板上通过一次构图工艺形成有源层、源漏极以及刻蚀阻挡层的图形，所述刻蚀阻挡层覆盖所述有源层且位于所述源漏极之间，如图1所示，具体可以采用如下步骤实现：
S101、在衬底基板上依次形成氧化物半导体薄膜和金属薄膜；
S102、在金属薄膜上形成光刻胶，使用掩膜板对光刻胶曝光显影，得到光刻胶完全去除区域、光刻胶部分保留区域以及光刻胶完全保留区域；其中，光刻胶完全去除区域对应于形成刻蚀阻挡层的图形区域，光刻胶完全保留区域对应于形成源漏极的图形区域；
S103、在光刻胶完全去除区域的氧化物半导体薄膜上，形成覆盖在有源层且位于源漏极之间的刻蚀阻挡层的图形；
S104、利用光刻胶完全保留区域的光刻胶和刻蚀阻挡层的遮挡，去除掉光刻胶部分保留区域的氧化物半导体薄膜和金属薄膜，形成有源层和源漏极的图形。
在具体实施时，在实现上述步骤S101在衬底基板100上依次形成氧化物半导体薄膜200和金属薄膜300时，如图2a所示，具体可以利用磁控溅射沉积30-50nm氧化物半导体薄膜200，优选采用IGZO材料，其性能稳定有利于量产；之后，利用磁控溅射沉积一层200nm-300nm的金属薄膜300，优选采用Cu材料，Cu具有低电阻的优势，同时Cu的刻蚀液对IGZO影响相对较小。
在具体实施时，在实现上述步骤S102使用掩膜板500对光刻胶400曝光显影，以便得到光刻胶完全去除区域a、光刻胶部分保留区域c以及光刻胶完全保留区域b时，如图2a所示，具体可以使用的掩膜板500可以为半色调掩膜板或灰色调掩膜板。
在具体实施时，上述步骤S103在光刻胶完全去除区域的氧化物半导体薄膜上，形成覆盖在有源层且位于源漏极之间的刻蚀阻挡层的图形，可以通过下述方式实现：
首先，如图2b所示，采用刻蚀工艺去除掉光刻胶完全去除区域a的金属薄膜300，得到位于源漏极之间沟道d；具体地，由于此次刻蚀工艺仅刻蚀金属薄膜300，对氧化物半导体薄膜200无刻蚀，因此，需要选用对于氧化物半导体薄膜200无刻蚀的刻蚀液，诸如无氟的双氧水；
然后，如图2c所示，利用光刻胶完全保留区域b和光刻胶部分保留区域c的光刻胶400的遮挡，采用离子注入工艺在沟道d内形成刻蚀阻挡层600的图形。
在具体实施时，上述步骤S104利用光刻胶完全保留区域的光刻胶和刻蚀阻挡层的遮挡，去除掉光刻胶部分保留区域的氧化物半导体薄膜和金属薄膜，形成有源层和源漏极的图形，可以通过下述方式实现：
首先，如图2d所示，采用灰化工艺去除掉光刻胶部分保留区域c的光刻胶400，同时减薄光刻胶完全保留区域b的光刻胶400；
然后，如图2e所示，采用刻蚀工艺去除掉光刻胶部分保留区域c的金属薄膜300和氧化物半导体薄膜200，得到有源层200’的图形；具体地，由于此次刻蚀工艺不仅需要刻蚀金属薄膜300，还需要对氧化物半导体薄膜200刻蚀，因此，需要选用同时对氧化物半导体薄膜200和金属薄膜300刻蚀的刻蚀液，诸如含氟的双氧水；
最后，如图2f所示，剥离光刻胶完全保留区域c的光刻胶400，得到源漏极300’的图形。
在本发明实施例提供的上述薄膜晶体管的制作方法中，由于在步骤S103中先在源漏极之间沟道内形成了刻蚀阻挡层600，之后在步骤S104中利用刻蚀阻挡层600的遮挡形成有源层200’的图形，其中，刻蚀阻挡层600是利用氧化物半导体薄膜200进行离子注入后形成的，其本质仍然是半导体，在步骤S104进行刻蚀时刻蚀液虽然不能刻蚀掉刻蚀阻挡层600，但是还是会影响其导电性。这样可能会对整体薄膜晶体管的漏电流造成不利的影响，因此，较佳地，需要对刻蚀阻挡层600进行进一步处理，补偿背沟道的缺陷，从而保证刻蚀阻挡层600的绝缘特性。下面针对不同的薄膜晶体管的类型分别进行详细介绍。
在具体实施时，本发明实施例提供的上述薄膜晶体管的制作方法不限于薄膜晶体管的类型，可以应用于顶栅型薄膜晶体管，也可以应用于底栅型薄膜晶体管。
具体地，本发明实施例提供的上述薄膜晶体管的制作方法，在应用于底栅型薄膜晶体管时，在衬底基板上通过一次构图工艺形成有源层、源漏极以及刻蚀阻挡层的图形之前，还可以包括以下步骤：
首先，在衬底基板上通过一次构图工艺形成栅极的图形；
之后，在形成有栅极的图形的衬底基板上形成栅绝缘层。
即在本发明实施例提供的上述薄膜晶体管的制作方法应用于底栅型薄膜晶体管时，如图3a所示，先制作栅极700的图形，之后在栅绝缘层800上通过一次构图工艺形成有源层200’、源漏极300’以及覆盖在有源层200’位于源漏极300’之间沟道内的刻蚀阻挡层600的图形，并且，一般还会在接着制作保护层，以便在薄膜晶体管应用于阵列基板时，通过保护层中的过孔将薄膜晶体管的漏极与保护层之上制作的像素电极连接。
进一步地，本发明实施例提供的上述薄膜晶体管的制作方法，在应用于底栅型薄膜晶体管时，在衬底基板上通过一次构图工艺形成有源层、源漏极以及刻蚀阻挡层的图形之后，还可以包括以下步骤：
在衬底基板上形成保护层后进行退火工艺，即在有源层，源漏极和刻蚀阻挡层上形成保护层，之后进行退火处理，在退火时，可以修复刻蚀液造成的刻蚀阻挡层中的缺陷，保证刻蚀阻挡层的绝缘特性；和/或，
采用等离子体对刻蚀阻挡层进行处理，即在形成有源层，源漏极和刻蚀阻挡层之后，或者在形成保护层之后，采用诸如N2O、O2的等离子气体对刻蚀阻挡层进行处理，保证其性能。
具体地，本发明实施例提供的上述薄膜晶体管的制作方法，在应用于顶栅型薄膜晶体管时，在衬底基板上通过一次构图工艺形成有源层、源漏极以及刻蚀阻挡层的图形之后，还可以包括以下步骤：
首先，在衬底基板上形成栅绝缘层；
之后，在栅绝缘层上通过一次构图工艺形成栅极的图形。
即在本发明实施例提供的上述薄膜晶体管的制作方法应用于顶栅型薄膜晶体管时，如图3b所示，先在衬底基板100上通过一次构图工艺形成有源层200’、源漏极300’以及覆盖在有源层200’位于源漏极300’之间沟道内的刻蚀阻挡层600的图形，之后制作栅绝缘层800，最后在栅绝缘层800上制作栅极700的图形，一般还会在栅极700的图形上制作保护层，以便在薄膜晶体管应用于阵列基板时，通过保护层中的过孔将薄膜晶体管的漏极与保护层之上制作的像素电极连接。
进一步地，本发明实施例提供的上述薄膜晶体管的制作方法，在应用于顶栅型薄膜晶体管时，在衬底基板上通过一次构图工艺形成有源层、源漏极以及刻蚀阻挡层的图形之后，还可以包括以下步骤：
在衬底基板上形成栅绝缘层后进行退火工艺，在退火时，可以修复刻蚀液造成的刻蚀阻挡层中的缺陷，保证刻蚀阻挡层的绝缘特性；和/或，
采用等离子体对所述刻蚀阻挡层进行处理，即在形成有源层，源漏极和刻蚀阻挡层之后，或者在形成栅绝缘层之后，采用诸如N2O、O2的等离子气体对刻蚀阻挡层进行处理，保证其性能。
基于同一发明构思，本发明实施例还提供了一种薄膜晶体管，该薄膜晶体管采用本发明实施例提供的上述制作方法制得，该薄膜晶体管可以为顶栅型薄膜晶体管，也可以为底栅型薄膜晶体管，其具体结构参见图3a和图3b所示。
基于同一发明构思，本发明实施例还提供了一种阵列基板，包括：本发明实施例提供的上述薄膜晶体管，以及与薄膜晶体管中的漏极连接的像素电极900，其具体结构参见4a和图4b所示。
基于同一发明构思，本发明实施例还提供了一种阵列基板的制作方法，包括：制作本发明实施例提供的上述薄膜晶体管；
在薄膜晶体管上通过一次构图工艺形成像素电极的图形。
具体地，在阵列基板中包含的薄膜晶体管为底栅型时，本发明实施例提供的上述阵列基板的制作方法，如图5所示，包括以下步骤：
S501、在衬底基板上利用一次构图工艺形成栅极和栅线的图形；
S502、在栅极和栅线的图形上形成栅绝缘层；
S503、在栅极绝缘层上通过一次构图工艺形成有源层、源漏极以及覆盖在有源层位于源漏极之间沟道内的刻蚀阻挡层的图形；
S504、在有源层、源漏极以及刻蚀阻挡层的图形上形成保护层，对刻蚀阻挡层进行等离子体处理以及退火处理，利用一次构图工艺在保护层中形成过孔；
S505、在保护层上利用一次构图工艺形成像素电极的图形。
具体地，在阵列基板中包含的薄膜晶体管为顶栅型时，本发明实施例提供的上述阵列基板的制作方法，如图6所示，包括以下步骤：
S601、在衬底基板上通过一次构图工艺形成有源层、源漏极以及覆盖在有源层位于源漏极之间沟道内的刻蚀阻挡层的图形；
S602、在有源层、源漏极以及刻蚀阻挡层的图形上形成栅绝缘层，对刻蚀阻挡层进行等离子体处理以及退火处理；
S603、在栅极绝缘层上利用一次构图工艺形成栅极和栅线的图形；
S604、在栅极和栅线上形成保护层，利用一次构图工艺在保护层以及栅绝缘层中形成过孔；
S605、在保护层上利用一次构图工艺形成像素电极的图形。
基于同一发明构思，本发明实施例还提供了一种显示装置，包括本发明实施例提供的上述阵列基板，该显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。该显示装置的实施可以参见上述阵列基板的实施例，重复之处不再赘述。
本发明实施例提供的上述薄膜晶体管、阵列基板、其制作方法及显示装置，通过一次构图工艺形成有源层、源漏极以及刻蚀阻挡层的图形，所述刻蚀阻挡层覆盖所述有源层且位于所述源漏极之间，即通过一次构图工艺同时完成了有源层、源漏极和刻蚀阻挡层三个图形的构图，减少了薄膜晶体管制作过程中的构图次数，简化了生产工艺，节约了生产成本。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (11)

1.一种薄膜晶体管的制作方法，其特征在于，包括：
在衬底基板上依次形成氧化物半导体薄膜和金属薄膜；
在所述金属薄膜上形成光刻胶，使用掩膜板对所述光刻胶曝光显影，得到光刻胶完全去除区域、光刻胶部分保留区域以及光刻胶完全保留区域；所述光刻胶完全去除区域对应于形成刻蚀阻挡层的图形区域，所述光刻胶完全保留区域对应于形成源漏极的图形区域；
在所述光刻胶完全去除区域的氧化物半导体薄膜上，形成覆盖在有源层且位于所述源漏极之间的刻蚀阻挡层的图形；
利用所述光刻胶完全保留区域的光刻胶和所述刻蚀阻挡层的遮挡，去除掉所述光刻胶部分保留区域的所述氧化物半导体薄膜和金属薄膜，形成所述有源层和源漏极的图形。
2.如权利要求1所述的制作方法，其特征在于，所述在所述光刻胶完全去除区域的氧化物半导体薄膜上，形成覆盖在所述有源层且位于所述源漏极之间的刻蚀阻挡层的图形，具体包括：
采用刻蚀工艺去除掉所述光刻胶完全去除区域的金属薄膜，得到位于所述源漏极之间沟道；
利用所述光刻胶完全保留区域和光刻胶部分保留区域的光刻胶的遮挡，采用离子注入工艺在所述沟道内形成刻蚀阻挡层的图形。
3.如权利要求1所述的制作方法，其特征在于，所述利用所述光刻胶完全保留区域的光刻胶和所述刻蚀阻挡层的遮挡，去除掉所述光刻胶部分保留区域的所述氧化物半导体薄膜和金属薄膜，形成所述有源层和源漏极的图形，具体包括：
采用灰化工艺去除掉所述光刻胶部分保留区域的光刻胶，同时减薄光刻胶完全保留区域的光刻胶；
采用刻蚀工艺去除掉所述光刻胶部分保留区域的金属薄膜和氧化物半导体薄膜，得到所述有源层的图形；
剥离所述光刻胶完全保留区域的光刻胶，得到所述源漏极的图形。
4.如权利要求1-3任一项所述的制作方法，其特征在于，所述掩膜板为半色调掩膜板或灰色调掩膜板。
5.如权利要求1-3任一项所述的制作方法，其特征在于，在所述衬底基板上形成有源层、源漏极以及刻蚀阻挡层的图形之前，还包括：
在衬底基板上通过一次构图工艺形成栅极的图形；
在形成有所述栅极的图形的衬底基板上形成栅绝缘层。
6.如权利要求5所述的制作方法，其特征在于，在所述衬底基板上形成有源层、源漏极以及刻蚀阻挡层的图形之后，还包括：
在所述衬底基板上形成保护层后进行退火工艺；和/或，
采用等离子体对所述刻蚀阻挡层进行处理。
7.如权利要求1-3任一项所述的制作方法，其特征在于，在所述衬底基板上形成有源层、源漏极以及刻蚀阻挡层的图形之后，还包括：
在衬底基板上形成栅绝缘层；
在所述栅绝缘层上通过一次构图工艺形成栅极的图形。
8.如权利要求7所述的制作方法，其特征在于，在所述衬底基板上形成有源层、源漏极以及刻蚀阻挡层的图形之后，还包括：
在所述衬底基板上形成栅绝缘层后进行退火工艺；和/或，
采用等离子体对所述刻蚀阻挡层进行处理。
9.一种薄膜晶体管，其特征在于，所述薄膜晶体管采用如权利要求1-8任一项所述的方法制得。
10.一种阵列基板，其特征在于，包括：如权利要求9所述的薄膜晶体管。
11.一种显示装置，其特征在于，包括：如权利要求10所述的阵列基板。
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