CN105518950B - 激光组件和组装激光组件的方法 - Google Patents

激光组件和组装激光组件的方法 Download PDF

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Publication number
CN105518950B
CN105518950B CN201580001570.5A CN201580001570A CN105518950B CN 105518950 B CN105518950 B CN 105518950B CN 201580001570 A CN201580001570 A CN 201580001570A CN 105518950 B CN105518950 B CN 105518950B
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China
Prior art keywords
brazing material
region
laser module
capacitor
metal pattern
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CN201580001570.5A
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English (en)
Chinese (zh)
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CN105518950A (zh
Inventor
冈良喜
中泽敬司
宫田充宜
河村浩充
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02355Fixing laser chips on mounts
    • H01S5/0237Fixing laser chips on mounts by soldering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Mountings; Housings characterised by the shape of the housings
    • H01S5/02216Butterfly-type, i.e. with electrode pins extending horizontally from the housings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261Non-optical elements, e.g. laser driver components, heaters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265Intensity modulators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255Controlling the frequency of the radiation
    • H01S5/06256Controlling the frequency of the radiation with DBR-structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CN201580001570.5A 2014-08-08 2015-08-06 激光组件和组装激光组件的方法 Active CN105518950B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014162643A JP6542514B2 (ja) 2014-08-08 2014-08-08 半導体レーザ装置
JP2014-162643 2014-08-08
PCT/JP2015/003966 WO2016021203A1 (en) 2014-08-08 2015-08-06 Laser assembly and method to assemble laser assembly

Publications (2)

Publication Number Publication Date
CN105518950A CN105518950A (zh) 2016-04-20
CN105518950B true CN105518950B (zh) 2018-12-07

Family

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CN201580001570.5A Active CN105518950B (zh) 2014-08-08 2015-08-06 激光组件和组装激光组件的方法

Country Status (3)

Country Link
JP (1) JP6542514B2 (enrdf_load_stackoverflow)
CN (1) CN105518950B (enrdf_load_stackoverflow)
WO (1) WO2016021203A1 (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6794140B2 (ja) * 2016-05-23 2020-12-02 オプト エレクトロニクス ソリューションズ 光送信機及びこれを含む光モジュール
DE102017108050B4 (de) * 2017-04-13 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterstrahlungsquelle
JP7097169B2 (ja) * 2017-10-27 2022-07-07 古河電気工業株式会社 光素子モジュール及び光素子モジュールの評価方法
JP2019087656A (ja) * 2017-11-08 2019-06-06 三菱電機株式会社 光モジュールおよびその製造方法
CN112467513B (zh) * 2019-08-22 2025-02-18 住友电工光电子器件创新株式会社 光学半导体装置和载体
CN114556724B (zh) * 2019-10-25 2024-04-02 三菱电机株式会社 光半导体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1902763A (zh) * 2004-01-15 2007-01-24 松下电器产业株式会社 光学收发器模组和光学收发器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4547063B2 (ja) * 2000-02-24 2010-09-22 シチズン電子株式会社 レーザダイオード用マウント構造及びその実装方法
JP3889933B2 (ja) * 2001-03-02 2007-03-07 シャープ株式会社 半導体発光装置
JP4349552B2 (ja) * 2001-12-26 2009-10-21 株式会社Kelk ペルチェ素子熱電変換モジュール、ペルチェ素子熱電変換モジュールの製造方法および光通信モジュール
US7426225B2 (en) * 2004-02-19 2008-09-16 Sumitomo Electric Industries, Ltd. Optical sub-assembly having a thermo-electric cooler and an optical transceiver using the optical sub-assembly
JP4772560B2 (ja) * 2006-03-31 2011-09-14 住友電工デバイス・イノベーション株式会社 光半導体装置、およびその制御方法
JP4994173B2 (ja) * 2007-09-27 2012-08-08 京セラ株式会社 電子部品
JP2012119637A (ja) * 2010-12-03 2012-06-21 Sumitomo Electric Device Innovations Inc 光半導体装置の製造方法
US8821042B2 (en) * 2011-07-04 2014-09-02 Sumitomo Electic Industries, Ltd. Optical module with lens assembly directly mounted on carrier by soldering and laser diode indirectly mounted on carrier through sub-mount
JP2013074187A (ja) * 2011-09-28 2013-04-22 Oki Electric Ind Co Ltd モード同期半導体レーザ装置及びモード同期半導体レーザ装置の制御方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1902763A (zh) * 2004-01-15 2007-01-24 松下电器产业株式会社 光学收发器模组和光学收发器

Also Published As

Publication number Publication date
JP6542514B2 (ja) 2019-07-10
CN105518950A (zh) 2016-04-20
JP2016039304A (ja) 2016-03-22
WO2016021203A1 (en) 2016-02-11

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